US20030063268A1 - Projection exposure system - Google Patents

Projection exposure system Download PDF

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Publication number
US20030063268A1
US20030063268A1 US10/233,314 US23331402A US2003063268A1 US 20030063268 A1 US20030063268 A1 US 20030063268A1 US 23331402 A US23331402 A US 23331402A US 2003063268 A1 US2003063268 A1 US 2003063268A1
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Prior art keywords
optical
group
projection
optical components
exposure system
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Abandoned
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US10/233,314
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English (en)
Inventor
Bernhard Kneer
Gerald Richter
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Carl Zeiss SMT GmbH
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Carl Zeiss SMT GmbH
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Assigned to CARL ZEISS SEMICONDUCTOR MANUFACTURING TECHNOLOGIES AG reassignment CARL ZEISS SEMICONDUCTOR MANUFACTURING TECHNOLOGIES AG ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: RICHTER, GERALD, KNEER, BERNHARD
Publication of US20030063268A1 publication Critical patent/US20030063268A1/en
Assigned to CARL ZEISS SMT AG reassignment CARL ZEISS SMT AG CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: CARL ZEISS SEMICONDUCTOR MANUFACTURING TECHNOLOGIES
Priority to US11/396,051 priority Critical patent/US7408621B2/en
Priority to US11/627,158 priority patent/US7457043B2/en
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/18—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical projection, e.g. combination of mirror and condenser and objective
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
    • G02B13/143—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation for use with ultraviolet radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength

Definitions

  • the invention relates to a projection exposure system, in particular for microlithography, for generating, in an image plane, an image of a mask arranged in an object plane, with a light source emitting projection light and projection optics arranged between the mask and the image, wherein the following are arranged in the beam path of the projection optics, starting from the mask:
  • Such projection optics are known from DE 198 55 108 A and DE 199 42 281 A in the name of the Applicant. They are suitable, in particular, for use with projection light wavelengths in the DUV wavelength range.
  • these documents also refer in places to a fifth and a sixth group of optical components, although these may be combined as a fifth group of optical components with an overall positive refractive power for the purposes of describing the invention below.
  • the first optical subgroup comprises one of the mask and at least one optical component from the first group of optical components
  • the second optical subgroup comprises at least one optical component from one of the second and the third group of optical components
  • the third optical subgroup comprises at least one optical component from one of the third and the fourth group of optical components.
  • the second optical subgroup is arranged next to the first group of optical components.
  • at least two displaceable subgroups are present in spatial proximity, which offers the possibility of simplifying the design of the projection optics.
  • the third optical subgroup may be arranged in the transition region between the third and the fourth groups of optical components.
  • good correction of imaging errors which typically occur is obtained in this case.
  • a pair of optical components whose displacements along the optical axis are expediently coupled together, may be provided as the second optical subgroup.
  • Such a component pair has been found to be efficient in terms of optical corrective action, as has been shown by optical calculations.
  • a support body is in this case provided, which can be displaced along the optical axis of the projection optics and which supports the pair of optical components together.
  • This permits a simple mechanical structure for the optical components which can be displaced together.
  • An instrument for adjusting the wavelength may additionally be provided. According to the invention, it has been established that an instrument for adjusting the wavelength can in many cases fulfil the corrective function of an additional displaceable subgroup of optical components. In most cases, the wavelength adjustment means is easier to produce than an additional displaceable subgroup.
  • the adjustment instrument includes means for altering the emission wavelength of the light source.
  • Such an adjustment instrument is energy-efficient.
  • the adjustment instrument may include means for altering the projection light wavelength after exiting the light source.
  • Such an adjustment instrument is easy to produce, for example by means of colour filters.
  • At least a fourth optical subgroup having at least one optical component, is provided which can be displaced along the optical axis and which comprises at least one optical component from the fifth group of optical components.
  • the at least a fourth optical subgroup may comprise an at most fourth and a fifth optical subgroup.
  • the optical components may be designed as refractive components. With refractive optical components, it is possible to produce projection optics of the type mentioned in the introduction with comparatively minor mechanical outlay. As an alternative, however, it is likewise possible to embody the projection optics as reflective components.
  • FIG. 1 shows a lens section of a projection objective of a projection exposure system
  • FIG. 2 shows a similar lens section to FIG. 1 of an alternative projection objective
  • FIG. 3 shows a similar lens section to FIG. 1 of a further projection objective.
  • the projection objectives described below with the aid of their lens designs are used in the scope of microlithography projection exposure in order for an image of a structure located on a mask to be formed onto a wafer, the image of the structure lying in a corrected image field of the projection objective.
  • the projection objectives which are shown are refractive systems, and all the lenses used there are made of quartz glass.
  • the projection objectives are designed for operation with the wavelength of a KrF excimer laser at 248 nm.
  • the beam paths, through the objective, of two pencils of rays respectively starting from an object point are represented in the following figures for illustration.
  • a mask 2 is arranged in the object plane of the projection objective.
  • a first lens group LG 1 with an overall positive refractive power which has five lenses 3 , 4 , 5 , 6 and 7 in all, is arranged behind the mask 2 in the beam direction of the projection light pencil.
  • the first lens group LG 1 with an overall positive refractive power is adjoined by a second lens group LG 2 with an overall negative refractive power, which likewise comprises five lenses 8 , 9 , 10 , 11 , 12 .
  • the second lens group LG 2 is followed by a third lens group LG 3 with an overall positive refractive power, comprising six lenses 13 , 14 , 15 , 16 , 17 , 18 in all.
  • This is adjoined by a fourth lens group LG 4 with an overall negative refractive power and two lenses 19 , 20 .
  • the remaining optical components of the projection objective 1 can be combined into a fifth lens group LG 5 with an overall positive refractive power.
  • the projection objective 1 is terminated, towards a wafer 36 situated in the image plane of the projection objective 1 , by a further plane-parallel plate 35 .
  • correction components comprise a plurality of subgroups of optical components, in each case comprising at least one optical component, which can be displaced in the direction of the optical axis.
  • the reticle holding the mask 2 , or at least one lens from the first lens group LG 1 can be displaced in the direction of the optical axis.
  • the mask 2 and the lenses from the lens group LG 1 can therefore be regarded as belonging to a first subgroup of optical components.
  • At least one lens from the second or the third lens group LG 2 , LG 3 can be displaced in the direction of the optical axis. These lenses from the second or the third lens group LG 2 , LG 3 can therefore be regarded as belonging to a second subgroup of optical components.
  • At least one lens from the third or the fourth lens group LG 3 , LG 4 can also be displaced in the direction of the optical axis. These lenses from the third or the fourth lens group LG 3 , LG 4 can therefore be regarded as belonging to a third subgroup of optical components.
  • correction instruments which, on the one hand, are used to optimise the compensation for the said image errors and, on the other hand, can additionally influence the image errors of coma and spherical aberration as well. Besides manipulation of optical components in the direction of the optical axis, alteration of the projection light wavelength is also in principle viable for this.
  • the reticle holding the mask 2 , the lenses 8 and 9 as well as the lens 17 can be displaced in the direction of the optical axis in the projection objective 1 .
  • the lenses 8 and 9 can in this case be displaced not independently of one another, but rather together as a group. To that end, the lenses 8 and 9 can be displaced together on a support body (not shown in the drawing) which is arranged so that it can be displaced along the optical axis.
  • the following image error values were used as starting values to determine the corrective action: 50 ppm for the scaling, 50 nm for the distortion and 100 nm for the image field curvature coupled in the ratio 1:1 to 100 nm of astigmatism, since these image errors can be corrected only simultaneously by Z manipulators.
  • the value of the merit function for these starting values can be reduced to an end value whose absolute value now amounts to only 1.9% of the starting value.
  • the statistical sums over the residual image errors after compensation for the three said starting image errors by the correction instruments of the first exemplary embodiment are represented in the first row of Table 1, which is given at the end of the Description.
  • the values for the distortion (Disto), focal plane deviation (FPD), astigmatism (AST) as geometrical image errors, as well as the most important wavefront errors as Zemike coefficients (Z 7 , Z 9 , Z 10 , Z 12 , Z 14 , Z 16 , Z 17 , Z 25 ), are indicated.
  • the residual image error is the maximum value of an image error, for example distortion, in the image field.
  • the residual image error is determined upon each compensation for a model image-error profile. The root of the sum of the squares of the individual residual image errors obtained from the compensations is formed during the statistical summation.
  • the projection objective 1 has, as correction instruments, lenses 6 , 8 , 9 and 17 which can be displaced in the direction of the optical axis.
  • the reticle 2 is not displaceable here.
  • the lenses 8 and 9 can here again be displaced in the direction of the optical axis not independently of one another, but rather together as a group.
  • the reduction of the value of the merit function, as well as the residual image errors after compensation has been carried out are here again calculated with the aid of the same starting values for the image errors of scaling, distortion and image field curvature.
  • the merit function is reduced to 1.7% of the starting value.
  • the following correction instruments are used in the projection objective 1 : A reticle which holds the mask 2 and can be displaced in the direction of the optical axis, lenses 8 , 9 , 17 and 31 which can be displaced in the direction of the optical axis, as well as a means of adjusting the wavelength of the projection light.
  • the lenses 8 and 9 can be displaced not independently of one another but rather together as a group.
  • a lens from the fifth lens group LG 5 is hence additionally displaceable as well. These lenses from the fifth lens group LG 5 can therefore be regarded as belonging to a further subgroup of optical components.
  • the emission wavelength of the light source may be altered.
  • this may be carried out, for example, using a dispersive optical element, for example a grating, which is internal to the resonator.
  • the following are provided as correction instruments in the projection objective 1 : A reticle which holds the mask 2 and can be displaced in the direction of the optical axis, displaceable lenses 8 , 9 , 17 , 23 and 31 .
  • the lenses 8 and 9 can be displaced not independently of one another but rather together as a group.
  • the residual image error data are entered in the fourth row of Table 1. Especially in the case of the higher Zernike coefficients, reductions of the absolute values in relation to the third exemplary embodiment are obtained here.
  • the following correction instruments are provided in the projection objective 1 : Lenses 6 , 8 , 9 , 17 , 23 and 31 which can be displaced in the direction of the optical axis.
  • the reticle 2 is not displaceable.
  • the lenses 8 and 9 can be displaced not independently of one another but rather together as a group.
  • a reduction of the merit function to 0.60% of the starting value is obtained here.
  • the residual image error data are entered in the fifth row of Table 1. These data correspond approximately to those of the fourth exemplary embodiment.
  • FIG. 2 A second projection objective 101 , for which a series of exemplary embodiments of correction instrument combinations will likewise be discussed below, is represented in FIG. 2. Components which correspond to those that have already been explained in connection with FIG. 1 carry reference numbers increased by 100, and they will not be explained in detail again.
  • the first lens group LG 1 comprises, in the projection objective 101 , five lenses 137 , 138 , 139 , 140 , 141 .
  • the second lens group LG 2 is made up of four lenses 142 , 143 , 144 , 145 .
  • the third lens group LG 3 has four lenses 146 , 147 , 148 , 149 in all.
  • the fourth lens group LG 4 comprises the four lenses 150 , 151 , 152 , 153 .
  • the lenses following the lens group LG 4 are, for their part, divided into two lens groups:
  • the lens group LG 4 is followed, in the projection beam direction, firstly by a lens group LG 5 with an overall positive refractive power. It has 10 lenses 154 , 155 , 156 , 157 , 158 , 159 , 160 , 161 , 162 , 163 in all.
  • an aperture diaphragm AP is arranged in a pupil plane of the projection objective 101 .
  • the lens group LG 5 is followed, in the projection beam direction, by a lens group LG 6 , likewise with an overall positive refractive power. It has two lenses 164 , 165 in all, the lens 164 having a negative refractive power. The last two lens groups LG 5 , LG 6 can be considered as one lens group with an overall positive refractive power.
  • the lens 165 is next to the wafer 136 .
  • the projection objective 101 of FIG. 2 has the following correction instruments: A reticle which holds the mask 102 and can be displaced in the direction of the optical axis, lenses 141 , 142 , 149 which can be displaced in the direction of the optical axis.
  • the lenses 141 , 142 are in this case displaceable not independently of one another but rather only together as a group.
  • the following correction instruments are present in the projection objective 101 : Lenses 140 , 141 , 142 and 149 which can be displaced in the direction of the optical axis.
  • the reticle 102 is not displaceable.
  • the lenses 141 , 142 are here again displaceable not independently of one another but rather together as a group. Assuming the starting image errors according to the first exemplary embodiment, a reduction of the merit function to 2.7% of the starting value is obtained here.
  • the residual image error data are entered in the seventh row of Table 1.
  • the following correction instruments are present in the projection objective 101 : A reticle which holds the mask 102 and can be displaced in the direction of the optical axis, displaceable lenses 140 , 141 , 142 and 149 , as well as a means of adjusting the wavelength.
  • the lenses 141 , 142 are in this case displaceable not independently of one another but rather only together as a group.
  • starting image errors for the coma (10 nm Z 7 ) and the spherical aberration (10 nm Z 9 ) are also assumed, in addition to the starting image errors for the scaling, the distortion and the image field curvature.
  • a reduction of the merit function calculated for these starting image errors to 1.5% of the starting value is obtained after use of the correction instruments.
  • the residual image error data are given in the eighth row of Table 1.
  • the projection objective 101 has the following correction instruments: A reticle which holds the mask 102 and can be displaced in the direction of the optical axis, lenses 140 , 141 , 142 , 149 and 157 which can be displaced in the direction of the optical axis.
  • the lenses 141 , 142 are in this case displaceable not independently of one another but rather together as a group.
  • a reduction of the merit function to 1.4% of the starting value is obtained here.
  • the residual image error data are given in the ninth row of Table 1.
  • the following correction instruments are provided in the projection objective 101 : Lenses 140 , 141 , 142 , 149 , 157 , 159 which can be displaced in the direction of the optical axis.
  • the reticle 102 is not displaceable.
  • the lenses 141 , 142 are displaceable not independently of one another but rather together as a group.
  • a reduction of the merit function to 1.4% of the starting value is obtained here.
  • the residual image error data are given in the tenth row of Table 1.
  • FIG. 3 A third projection objective 201 , for which further exemplary embodiments of combinations for correction instruments will be given below, is represented in FIG. 3. Components which correspond to those that have already been explained with reference to FIG. 1 or FIG. 2 carry reference numbers increased respectively by 200 and 100, and they will not be explained in detail again.
  • the lens data for the projection objective 201 are disclosed in DE 199 42 281 A, Table 1, to which reference is hereby made.
  • the first lens group LG 1 of the projection objective 201 has five lenses 266 , 267 , 268 , 269 , 270 in all.
  • the second lens group LG 2 of the projection objective 201 is made up of five lenses 271 , 272 , 273 , 274 , 175 in all.
  • the third lens group LG 3 of the projection objective 201 comprises four lenses 276 , 277 , 278 , 279 in all.
  • the fourth lens group LG 4 of the projection objective 201 has four lenses 280 , 281 , 282 , 283 in all.
  • the projection objective 201 of FIG. 3 is constructed similarly to the projection objective 101 of FIG. 2 in respect of the lens groups LG 5 , LG 6 .
  • the fifth lens group of the projection objective 201 comprises eight lenses 284 , 285 , 286 , 287 , 288 , 289 , 290 , 291 in all. Between the lenses 286 , 287 , an aperture diaphragm AP is provided in the vicinity of a pupil plane of the projection objective 201 .
  • the sixth lens group LG 6 of the projection objective 201 comprises, in the projection beam direction, firstly three lenses 292 , 293 , 294 as well as a plane-parallel plate 295 terminating the projection objective 201 in the direction of the wafer 236 .
  • the following correction instruments are provided in the projection objective 201 of FIG. 3: A reticle which holds the mask 202 and can be displaced in the direction of the optical axis, lenses 271 , 272 and 280 which can be displaced in the direction of the optical axis.
  • the lenses 271 , 272 are displaceable not independently of one another but rather together as a group.
  • the projection objective 201 has the following correction instruments: Lenses 269 , 271 , 272 and 280 which can be displaced in the direction of the optical axis.
  • the reticle 202 is not displaceable.
  • the lenses 271 , 272 are displaceable not independently of one another but rather together as a group.
  • the residual image error data are entered in the twelfth row of Table 1.
  • the following correction instruments are present in the projection objective 201 : A reticle which supports the mask 202 and can be displaced in the direction of the optical axis, lenses 269 , 271 , 272 and 279 which can be displaced in the direction of the optical axis, as well as a means of adjusting the wavelength.
  • the lenses 271 , 272 are displaceable not independently of one another but rather together as a group.
  • starting image errors for the coma (10 nm Z 7 ) and the spherical aberration (10 nm Z 9 ) are also assumed as starting image errors, besides those mentioned above for the scaling, the distortion and the image field curvature.
  • a reduction of the merit function to 1.02% of the starting value is obtained.
  • the associated residual image error data are entered in the thirteenth row of Table 1.
  • the projection objective 201 has the following correction instruments: A reticle which holds the mask 202 and can be displaced in the direction of the optical axis, lenses 271 , 280 , 286 and 290 which can be displaced independently in the direction of the optical axis. Assuming the starting image errors according to the thirteenth exemplary embodiment, a reduction of the merit function to 0.82% of the starting value is obtained here. The associated residual image error data are entered in the fourteenth row of Table 1.
  • the following correction instruments are provided in the projection objective 201 : Lenses 268 , 271 , 280 , 286 and 290 which can be displaced independently in the direction of the optical axis.
  • the reticle 202 is not displaceable. Assuming the starting image errors as in the thirteenth exemplary embodiment, a reduction of the merit function to 0.68% of the starting value is obtained here.
  • the associated residual image error data are entered in the fifteenth row of Table 1.
  • the following correction instruments are provided in the projection objective 201 : A reticle which holds the mask 202 and can be displaced in the direction of the optical axis, lenses 271 , 272 , 280 and 284 which can be displaced in the direction of the optical axis.
  • the lenses 271 , 272 are displaceable not independently of one another but rather only together as a group.
  • the following starting image errors were assumed: 30 ppm scaling, 50 nm third-order distortion and 0.25 ⁇ m average image field curvature.
  • the following residual image errors are obtained as geometrical longitudinal aberrations: a coma at the field edge of 100 nm maximum, a coma in the field zone of 61 nm maximum, a coma in the aperture zone at the field edge of 154 nm maximum, and a variation of the spherical aberration in the image field of 85 nm maximum.
  • the following correction instruments are provided in the projection objective 201 : A reticle which holds the mask 202 and can be displaced in the direction of the optical axis, lenses 271 , 278 , 280 and 284 which can be displaced independently in the direction of the optical axis.
  • the following residual image errors are obtained as geometrical longitudinal aberrations: a coma in the field zone of 15 nm maximum, a coma in the aperture zone at the field edge of 122 nm maximum, and a variation of the spherical aberration in the image field of 48 nm maximum.
  • the following correction instruments are provided in the projection objective 201 : A reticle which holds the mask 202 and can be displaced in the direction of the optical axis, lenses 271 , 280 and 284 which can be displaced independently in the direction of the optical axis, as well as a means of adjusting the wavelength.
  • the following residual image errors are obtained as geometrical longitudinal aberrations after the correction by the correction instruments in the eighteenth exemplary embodiment: a coma in the field zone of 7 nm maximum, a coma in the aperture zone at the field edge of 112 nm maximum, and a variation of the spherical aberration in the image field of 123 nm maximum.
  • the lens of the third lens group LG 3 with the maximum diameter may also be provided as a displaceable individual lens, instead of a lens in the vicinity of the transition between the third and fourth lens groups LG 3 , LG 4 .
  • a lens in the vicinity of the transition between the second and the third lens groups LG 2 , LG 3 may be designed as displaceable instead of a lens in the vicinity of the transition between the first and the second lens groups LG 1 , LG 2 (lens 271 in the eighteenth exemplary embodiment).
  • the following lenses can be displaced in the direction of the optical axis in a twenty-first exemplary embodiment: two lenses in the vicinity of the maximum diameter of the third lens group LG 3 , for example the lenses 278 and 279 , and one lens in the vicinity of the transition between the third and the fourth lens groups LG 3 , LG 4 , for example the lens 280 .

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
US10/233,314 2001-09-05 2002-08-30 Projection exposure system Abandoned US20030063268A1 (en)

Priority Applications (2)

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US11/396,051 US7408621B2 (en) 2001-09-05 2006-03-31 Projection exposure system
US11/627,158 US7457043B2 (en) 2001-09-05 2007-01-25 Projection exposure system

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Application Number Priority Date Filing Date Title
DE10143385A DE10143385C2 (de) 2001-09-05 2001-09-05 Projektionsbelichtungsanlage
DE10143385.9 2001-09-05

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US11/396,051 Expired - Fee Related US7408621B2 (en) 2001-09-05 2006-03-31 Projection exposure system
US11/627,158 Expired - Fee Related US7457043B2 (en) 2001-09-05 2007-01-25 Projection exposure system

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US11/627,158 Expired - Fee Related US7457043B2 (en) 2001-09-05 2007-01-25 Projection exposure system

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US (3) US20030063268A1 (enrdf_load_stackoverflow)
EP (1) EP1291719B1 (enrdf_load_stackoverflow)
JP (2) JP2003156684A (enrdf_load_stackoverflow)
KR (1) KR100939423B1 (enrdf_load_stackoverflow)
DE (2) DE10143385C2 (enrdf_load_stackoverflow)
TW (1) TW569038B (enrdf_load_stackoverflow)

Cited By (14)

* Cited by examiner, † Cited by third party
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US20030007138A1 (en) * 2001-03-27 2003-01-09 Nikon Corporation Projection optical system, a projection exposure apparatus, and a projection exposure method
US20050237506A1 (en) * 2004-04-09 2005-10-27 Carl Zeiss Smt Ag Method of optimizing imaging performance
US20080212170A1 (en) * 2004-01-14 2008-09-04 Carl Zeiss Smt Ag Catadioptric projection objective
US20090190208A1 (en) * 2004-01-14 2009-07-30 Carl Zeiss Smt Ag Catadioptric projection objective
US20100290024A1 (en) * 2005-05-27 2010-11-18 Carl Zeiss Smt Ag Method for improving the imaging properties of a projection objective, and such a projection objective
DE102009029673A1 (de) 2009-09-22 2010-11-25 Carl Zeiss Smt Ag Manipulator zur Positionierung eines optischen Elementes in mehreren räumlichen Freiheitsgraden
US20110273780A1 (en) * 2010-05-10 2011-11-10 Sony Corporation Zoom lens and imaging apparatus
WO2011141046A1 (en) 2010-04-23 2011-11-17 Carl Zeiss Smt Gmbh Process of operating a lithographic system comprising a manipulation of an optical element of the lithographic system
DE102010029651A1 (de) 2010-06-02 2011-12-08 Carl Zeiss Smt Gmbh Verfahren zum Betrieb einer Projektionsbelichtungsanlage für die Mikrolithographie mit Korrektur von durch rigorose Effekte der Maske induzierten Abbildungsfehlern
WO2012163643A1 (de) 2011-05-30 2012-12-06 Carl Zeiss Smt Gmbh Bewegung eines optischen elements in einer mikrolithografischen projektionsbelichtungsanlage
WO2014000970A1 (en) * 2012-06-29 2014-01-03 Carl Zeiss Smt Gmbh Projection exposure apparatus for projection lithography
US8913316B2 (en) 2004-05-17 2014-12-16 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images
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US9360775B2 (en) * 2006-11-30 2016-06-07 Carl Zeiss Smt Gmbh Method of manufacturing a projection objective and projection objective
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US9235136B2 (en) 2012-06-29 2016-01-12 Carl Zeiss Smt Gmbh Projection exposure apparatus for projection lithography
WO2014000970A1 (en) * 2012-06-29 2014-01-03 Carl Zeiss Smt Gmbh Projection exposure apparatus for projection lithography
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US9823578B2 (en) 2015-04-10 2017-11-21 Carl Zeiss Smt Gmbh Control device for controlling at least one manipulator of a projection lens

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US20060170897A1 (en) 2006-08-03
EP1291719B1 (de) 2007-11-14
KR100939423B1 (ko) 2010-01-28
DE10143385A1 (de) 2003-04-03
DE50211190D1 (de) 2007-12-27
US20070171539A1 (en) 2007-07-26
KR20030021127A (ko) 2003-03-12
EP1291719A1 (de) 2003-03-12
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TW569038B (en) 2004-01-01
US7457043B2 (en) 2008-11-25
JP2009037251A (ja) 2009-02-19
JP2003156684A (ja) 2003-05-30

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