US20020191310A1 - Attenuating filter for ultraviolet light - Google Patents
Attenuating filter for ultraviolet light Download PDFInfo
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- US20020191310A1 US20020191310A1 US10/151,892 US15189202A US2002191310A1 US 20020191310 A1 US20020191310 A1 US 20020191310A1 US 15189202 A US15189202 A US 15189202A US 2002191310 A1 US2002191310 A1 US 2002191310A1
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- Prior art keywords
- filter
- coating
- attenuating
- dielectric material
- attenuating filter
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- 238000000576 coating method Methods 0.000 claims abstract description 169
- 239000011248 coating agent Substances 0.000 claims abstract description 116
- 238000002834 transmittance Methods 0.000 claims abstract description 63
- 239000003989 dielectric material Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 34
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims abstract description 31
- 238000009826 distribution Methods 0.000 claims abstract description 19
- 230000003595 spectral effect Effects 0.000 claims abstract description 15
- 238000010521 absorption reaction Methods 0.000 claims description 17
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 10
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 8
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 239000012780 transparent material Substances 0.000 claims description 4
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract description 23
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 abstract description 5
- 229910001634 calcium fluoride Inorganic materials 0.000 abstract description 5
- 230000005855 radiation Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 22
- 229910000449 hafnium oxide Inorganic materials 0.000 description 14
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 14
- 239000000463 material Substances 0.000 description 12
- 238000005286 illumination Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 4
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 4
- 230000007774 longterm Effects 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 1
- 230000035508 accumulation Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- -1 that shown in FIG. 3 Chemical compound 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
Definitions
- the invention relates to an attenuating filter providing a prescribed attenuation of the intensity of transmitted ultraviolet light over a predefined wavelength range according to a predefinable spatial distribution of its spectral transmittance.
- Attenuating filters of the type usually have a plane-parallel substrate fabricated from a material that has a sufficiently high transmittance for ultraviolet light over the wavelength range to be involved, as well as at least one filter coating that provides the desired spatial distribution of spectral transmittance applied to a surface of the substrate. Attenuating filters of the type are employed for, e.g., maintaining constant irradiation levels during long-term endurance tests employing laser light in order to quantitatively assess the abilities of certain samples, such as various types of quartz glass, to withstand irradiation by laser light. Attenuating filters may also be employed for effecting controlled reductions of irradiation levels to defined levels for irradiating samples, conducting calorimetric absorption measurements, or for implementing other methods for reducing or controlling irradiation levels.
- an additional attenuating filter that has a suitably shaped spatial-transmittance profile that will compensate for any variations in irradiation intensity and, preferably, a low reflectance, is inserted into the optical train, immediately ahead of the object plane (reticle plane) of the illumination system involved.
- the optical properties of the filters employed should remain unchanged and the filters should exhibit no noticeable degradation over their service lives. Compliance with this requirement will become increasingly difficult as the wavelengths involved become shorter and the irradiation intensities involved increase.
- platinum is employed as the absorbing material of the filter coating on microlithographic projection illumination systems designed for use at wavelengths of 436 nm, 365 nm, and 248 nm.
- platinum exhibits intolerably high degradation at, e.g., wavelengths of 193 nm and shorter wavelengths.
- solid neutral-density filters having, e.g., absorbing aluminum films like those employed for attenuating light in conjunction with rapidly concluded beam-profile measurements, are employed.
- aluminum films are unsuitable for long-term use, since they oxidize within a few minutes.
- One object of the invention is to provide an attenuating filter for ultraviolet light with wavelengths shorter than 200 nm that is capable of withstanding continuous-duty laser irradiation. It is another object that the attenuating filter should be both simple and inexpensive to fabricate and capable of being antireflection coated, if necessary.
- the invention provides an attenuating filter providing a prescribed attenuation of the intensity of transmitted ultraviolet light over a predefined wavelength range according to a predefinable spatial distribution of a spectral transmittance, the attenuating filter including:
- the filter coating including at least one layer fabricated from a dielectric material that absorbs over a predefined wavelength range. This allows a variation of the transmittance of the filter coating to be obtained by varying the thickness of the dielectric layer.
- An attenuating filter in the sense of the invention that is of that type mentioned at the outset hereof is characterized in that its filter coating consists of at least one layer of a dielectric material that absorbs over that predefined wavelength range to be involved, whereby a major share of its filtering effect will be due to absorption of radiation within the filter coating.
- the absorbing dielectric material is to be chosen such that it has an effective cross-section at the prescribed operating wavelength that is large enough to ensure that a rapid variation in the transmittance of the layer of dielectric material may be obtained by varying its thickness, if desired.
- any reductions in its transmittance due to reflection losses will be either low or negligible, which will be particularly highly beneficial in the case of applications that require avoiding stray light and/or employment of filters with high total transmittances.
- a uniform attenuating effect over the entire filter surface may be obtained if a uniform thickness of the filter coating is applied.
- the dielectric material has an absorption coefficient, k, in excess of 0.5, where an absorption coefficient of k>1.0 is preferable.
- the dielectric material employed for fabricating the filter coating will either contain a metal oxide or largely consist of a metal oxide.
- the dielectric material employed for fabricating the filter coating will either contain a metal oxide or largely consist of a metal oxide.
- filter coatings based on tantalum pentoxide (Ta 2 O 5 ) have proven particularly beneficial.
- hafnium oxide (HfO 2 ) may be employed as a coating material.
- aluminum oxide (Al 2 O 3 ) may also be suitable. Admixtures of several dielectrical materials may also be employed.
- tantalum oxide or tantalum pentoxide for fabricating optical filters, particularly interference filters, is, as such, known.
- tantalum oxide whether alone or admixed with other materials, has thus far largely been employed for fabricating antireflection coatings for the visible spectral region (cf., e.g., German Pat. Nos. DE 690 21 420 C2 or DE 30 09 533 C2).
- Tantalum oxide is also frequently employed for fabricating coatings that have high transmittances in the visible and high reflectances in the infrared (cf., e.g., German Pat. Nos. DE 38 25 671 and DE 692 08 712).
- the absorption of tantalum oxide is negligible.
- a highly absorbing dielectric material such as tantalum pentoxide
- for the filter coating allows covering the entire range of spectral transmittances, from nearly 100% transmittance (in the case of low coating thicknesses or sections of substrates lacking filter coatings) to high attenuations of incident radiation ranging down to around 1%, or several percent, of incident intensities, over the entire spectral range in question using maximum film thicknesses of around 10 nm, 5 nm, or less.
- Filter coatings with low thicknesses of, e.g., around 1 nm to 2 nm have another advantage in that they may be effectively antireflection coated employing simply configured antireflection coatings.
- uniform antireflection coatings i.e., antireflection coatings that have virtually constant, low, reflectances over the entire coated surfaces of filters to which they are applied, may be realized employing antireflection coatings with largely uniform thicknesses, since localized thickness gradients in the absorbing coatings involved will usually be so slight that they will have negligible effects on the local angles of incidence on the coated surfaces. The angles of incidence will thus roughly equal the angles of incidence on the substrates involved, which will usually be less than 20°.
- the angles of incidence on the coated surfaces and the substrates will thus be largely identical, even if the materials from which the respective filter coatings involved are fabricated have relatively low absorption coefficients, k.
- Effective antireflection coating thus need not be either broadband or effective over widely varying angles of incidence.
- the preferred, thin, filter coatings may thus be effectively antireflection coated employing relatively simply configured antireflection coatings.
- Dielectric antireflection coatings preferably have either a single layer or a single stack consisting of alternating layers of a dielectric material with a high refractive index and a dielectric material with a low refractive index.
- FIG. 1 is a section through part of a sample embodiment of an attenuating filter according to the invention, together with an associated plot of the relative transmittance of the attenuating filter as a function of location on same;
- FIG. 2 is a plot of the relative transmittance, T rel , and absolute transmittance, T abs , as a function of radial location of a sample embodiment of an attenuating filter according to the invention having a concentric spatial transmittance distribution;
- FIG. 3 is a plot comparing the local thicknesses, d T , of a filter coating fabricated from tantalum pentoxide (Ta 2 O 5 ) to the local thicknesses, d H , of a filter coating fabricated from hafnium oxide (HfO 2 ) required to yield those local transmittances shown in FIG. 2, along with plots of the associated respective local front-surface reflectances, R T and R H , of tantalum-pentoxide and hafnium-oxide filter coatings having no antireflection coatings;
- FIG. 4 shows plots of the computed absolute-transmittance, Tabs, for filter coatings fabricated from tantalum pentoxide and hafnium dioxide having antireflection coatings with uniform total thicknesses;
- FIG. 5 is a plot of the local thicknesses and reflectances of filter coatings fabricated from tantalum pentoxide and hafnium oxide like that shown in FIG. 3, wherein both of the filter coatings have an optimized antireflection coating with a uniform thickness.
- FIG. 1 depicts a schematized vertical section through a sample embodiment of an attenuating filter 1 according to the invention.
- the attenuating filter yields prescribed attenuations of ultraviolet light 2 conforming to a predefinable spatial distribution of the former's transmittance and has been designed for use at an operating wavelength of 193 nm.
- the attenuating filter has a substrate 3 in the form of a thin, plane-parallel plate fabricated from a material, e.g., crystalline calcium fluoride or quartz, that has virtually no absorption at the operating wavelength.
- Evaporated onto the planar entrance face 4 of the substrate is an absorbing filter coating 5 in the form of a gradient-filter coating whose local thickness varies continuously over the entrance face, where the thickness of the coating may drop to zero, thereby yielding, as in the case of the example depicted here, zones 6 that are not covered by the coating.
- the spatial distribution of the thickness of the filter coating or its transmittance might differ from that schematically indicated in the drawing, e.g., either might be concentrically distributed.
- the filter coating which has a maximum thickness of less than 2 nm, is so thin that its front surface 7 will be only slightly tilted with respect to the incident ultraviolet light 2 , even in the vicinities of thickness gradients.
- the maximum angle of incidence for light incident on the filter coating 5 i.e., the angle 8 between the local normal 9 to its front surface 7 and the beam axis 10 of the ultraviolet light 2 , will typically be roughly equal to the latter's angle of incidence on the entrance face 4 of the substrate, i.e., will usually be less than 10° to 20°.
- the filter coating 5 essentially consists of a layer of an absorbing dielectric material that is resistant to ultraviolet light, which, in the case of the sample embodiment shown here, has been fabricated from tantalum pentoxide (Ta 2 O 5 ), which has been found to have extremely high long-term stability at wavelengths in the vicinity of the operating wavelength, in the case of the preferred types of coatings, may be readily deposited employing physical vapor deposition (PVD), and has highly favorable optical properties for the application considered here.
- Ta 2 O 5 tantalum pentoxide
- PVD physical vapor deposition
- this particular metal oxide In addition to its rather high refractive index, 1.95, compared to the substrate material, calcium fluoride, which has a refractive index of 1.55, this particular metal oxide also has a high absorption coefficient, k, of 1.16, at the operating wavelength, i.e., has a high absorption cross-section for the ultraviolet light 2 employed, which means that any desired transmittance, from maximum transmittance at those zones 6 that have no filter coating to partial or complete blocking of the incident ultraviolet light 2 , may be obtained by suitably varying the thickness of the filter coating 5 . However, in the case of the application considered here, only relatively minor local variations in relative transmittance (the ratio of the filter coating's local transmittance to its total transmittance) of a few percent are involved. For example, reducing the coating's thickness from about 1.5 nm to zero will be sufficient to increase its relative transmittance from about 0.87 to 1.00.
- a particular advantage of attenuating filters according to the invention is that the filter coating 5 may be particularly easily uniformly antireflection coated, i.e., coated with an antireflection coating whose reflectance is uniform over its entire surface area, due to its low thickness.
- Antireflection coating attenuating filters is usually required in order to avoid stray light and reflection losses, which, in the case of the compensating filter mentioned at the outset hereof, will be necessary in order to minimize departures from uniform illumination of the image planes of microlithographic projection illumination systems, where filters with predefinable transmittance profiles, combined with low reflectances, are required in order to avoid stray light and global reflection losses, either of which would slow down illumination processes.
- a duolayer, dielectric, antireflection coating 15 that has also been applied by means of vacuum evaporation has been employed for antireflection coating the front surface 7 of the filter coating 5 .
- the antireflection coating 15 consists of a single layer 16 of a dielectric material with a high refractive index applied to the filter coating 5 and a single layer 17 of a dielectric material with a low, relative to the material with a high refractive index, refractive index applied on top of the layer 16 of a dielectric material with a high refractive index.
- the dielectric material with a high refractive index is aluminum oxide (Al 2 O 3 ), which has a refractive index of 1.69
- the dielectric material with a low refractive index is magnesium fluoride (MgF 2 ), which has a refractive index of 1.4.
- the layers 16 , 17 of the antireflection coating 15 have virtually constant thicknesses of approximately 60 nm, in the case of Al 2 O 3 , and approximately 32 nm, in the case of MgF 2 , over the entire front surface 7 of the filter coating 5 and are thus particularly simply applied to roughly planar substrates.
- antireflection coatings may also serve as protective coatings protecting their very thin, underlying, filter coating 5 against the effects of adverse ambient conditions.
- the antireflection coating 15 As a multilayer coating consisting of just two layers 16 , 17 and the resultant narrow range of tolerated angles of incidence, it will still provide uniformly high reductions of reflection losses and improved transmittances over the entire entrance face of the attenuating filter, since the angles of incidence 8 involved will remain small over the entire front surface 7 of the filter coating 5 due to its extremely low thickness and the resultant low thickness gradients occurring on its front surface 7 .
- a duolayer antireflection coating 21 that may also be deleted in the case of embodiments other than that depicted in FIG. 1, has been evaporated onto the rear surface 20 of the substrate 3 .
- the antireflection coating 21 has essentially the same design as the aforementioned antireflection coating 15 , which consists of an inner layer 22 of aluminum oxide applied to the substrate and an outer layer 23 of magnesium fluoride.
- the antireflection coating 21 may also have more than two layers.
- FIG. 1 depicts the relative transmittance, T rel , (indicated by the solid line) and the associated absolute transmittance, T abs , (indicated by the dotted line) for a filter coating having a prescribed, concentric, spatial transmittance distribution and no antireflection coating, where the absolute transmittance is the product of the relative transmittance and the transmittance of the (uncoated) substrate (0.9535).
- the maximum differential transmittance i.e., the difference between the maximum transmittance and the minimum transmittance, which is about 40%, is relatively high.
- neutral-density filters of optical systems employed for microlithographic chip fabrication usually have much lower differential transmittances, e.g., 15% or less, which will allow employing even better “simple” antireflection coatings than those to be discussed in conjunction with the examples presented here.
- FIGS. 3 - 5 present comparisons of the optical properties of attenuating filters whose filter coating consists of, in one case, tantalum pentoxide (subscript “T”) and, in the other case, of hafnium oxide (subscript “H”).
- a real refractive index, n, of 1.95 and an absorption coefficient, k, of 1.16 have been assumed for tantalum pentoxide and a real refractive, n, of 2.3 and a much lower absorption coefficient, k, of 0.25 have been assumed for the higher-refractive-index material involved, hafnium oxide.
- FIG. 3 depicts plots of those coating thicknesses, d T and d H , required to yield the spatial transmittance distributions depicted in FIG. 2 and the resultant front-surface reflectances, R T and R H , for filter coatings fabricated from tantalum pentoxide and hafnium oxide, respectively. It should be immediately obvious that, in the case of the more strongly absorbing tantalum pentoxide, thinner coatings will be sufficient to allow achieving comparatively larger reflectance reductions.
- FIG. 4 depicts plots of those absolute-transmission distributions required to yield those spatial transmittance distributions depicted in FIG. 2 for the case of a tantalum-pentoxide dielectric filter coating (indicated by the solid line) and the case of a hafnium-oxide dielectric filter coating (indicated by the dotted line), to each of which a “simple” antireflection coating, i.e., a duolayer antireflection coating that has a uniform total thickness and whose individual layers have uniform thicknesses, has been applied.
- the antireflection coatings have been optimized to eliminate stray light, i.e., have been designed to yield spatially uniform, low reflectances.
- FIG. 5 depicts plots of the coating thicknesses and the resultant reflectances that may be achieved for a tantalum-pentoxide filter coating and a hafnium-oxide filter coating, respectively.
- the filter coatings have a “simple” antireflection coating, i.e., a duolayer antireflection coating that has a uniform total thickness, applied to their front surfaces.
- a “simple” antireflection coating i.e., a duolayer antireflection coating that has a uniform total thickness
- FIG. 5 shows, firstly, that those thicknesses, d T and d H , of tantalum pentoxide and hafnium oxide, respectively, required to yield identical spatial transmittance distributions will be much greater for antireflection-coated filter coatings than for filter coatings that lack antireflection coatings cf.
- FIG. 3 which may be explained by pointing out that applying antireflection coatings to absorbing coatings markedly increases their transmittance, which must be compensated for by increasing the thickness of the absorbing coatings involved in order to restore their prescribed net transmittance.
- the antireflection coatings involved consist of alternating layers of magnesium fluoride and aluminum oxide having thicknesses of about 30 nm and about 60 nm, respectively, in the case of that tantalumoxide filter coating involved here and about 51 nm and about 36 nm, respectively, in the case of that hafnium-oxide filter coating involved here.
- hafnium oxide is generally suitable for use as the absorbing dielectric material of the filter coating 5 for use at 193 nm
- the prescribed spatial distribution of transmittance might be created by providing that the filter coating 5 be configured in the form of a grid of optically dense, e.g., circular, coated zones whose diameters and/or separations have been dimensioned such that they yield the desired transmittance for that zone for every such zone on the surface of the filter, i.e., by configuring a digital filter, rather than by the preferred tailoring of the, continuously varying, thickness of the filter coating.
- the substrate 3 may be fabricated from any suitable material that is sufficiently transparent at the operating wavelength to be involved.
- magnesium fluoride or synthetic quartz glass might also be employed instead of calcium fluoride.
- calcium fluoride or magnesium fluoride, and, if indicated, barium fluoride might also be employed as the substrate material.
- Any absorbing dielectric material that has sufficiently high absorption at the operating wavelength to be involved, which implies that its absorption coefficient, k, should be ideally be greater than 1.0 in order to allow reaching the prescribed attenuations of incident light while employing relatively low coating thicknesses, may be employed for fabricating the filter coating 5 .
- aluminum oxide may be employed for fabricating the filter coating.
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- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Optical Elements Other Than Lenses (AREA)
- Surface Treatment Of Glass (AREA)
- Optical Filters (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US10/998,050 US7196842B2 (en) | 2001-05-22 | 2004-11-29 | Attenuating filter for ultraviolet light |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10127225.1 | 2001-05-22 | ||
DE10127225A DE10127225A1 (de) | 2001-05-22 | 2001-05-22 | Ultraviolettlicht-Abschwächungsfilter |
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US10/998,050 Continuation US7196842B2 (en) | 2001-05-22 | 2004-11-29 | Attenuating filter for ultraviolet light |
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US20020191310A1 true US20020191310A1 (en) | 2002-12-19 |
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US10/151,892 Abandoned US20020191310A1 (en) | 2001-05-22 | 2002-05-22 | Attenuating filter for ultraviolet light |
US10/998,050 Expired - Fee Related US7196842B2 (en) | 2001-05-22 | 2004-11-29 | Attenuating filter for ultraviolet light |
Family Applications After (1)
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US10/998,050 Expired - Fee Related US7196842B2 (en) | 2001-05-22 | 2004-11-29 | Attenuating filter for ultraviolet light |
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US (2) | US20020191310A1 (sr) |
EP (1) | EP1260835B1 (sr) |
JP (1) | JP2003050311A (sr) |
KR (1) | KR20020089201A (sr) |
DE (2) | DE10127225A1 (sr) |
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Also Published As
Publication number | Publication date |
---|---|
DE50207537D1 (de) | 2006-08-31 |
KR20020089201A (ko) | 2002-11-29 |
EP1260835A3 (de) | 2003-11-19 |
DE10127225A1 (de) | 2002-11-28 |
US20050179996A1 (en) | 2005-08-18 |
JP2003050311A (ja) | 2003-02-21 |
US7196842B2 (en) | 2007-03-27 |
EP1260835A2 (de) | 2002-11-27 |
EP1260835B1 (de) | 2006-07-19 |
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