US20020029851A1 - Plasma processing method and apparatus using dynamic sensing of a plasma environment - Google Patents

Plasma processing method and apparatus using dynamic sensing of a plasma environment Download PDF

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Publication number
US20020029851A1
US20020029851A1 US09/793,624 US79362401A US2002029851A1 US 20020029851 A1 US20020029851 A1 US 20020029851A1 US 79362401 A US79362401 A US 79362401A US 2002029851 A1 US2002029851 A1 US 2002029851A1
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Prior art keywords
plasma
plasma processing
wafer
temporal change
parameter
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US09/793,624
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Manabu Edamura
Hideyuki Yamamoto
Kazuyuki Ikenaga
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Hitachi Ltd
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Hitachi Ltd
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Assigned to HITACHI, LTD. reassignment HITACHI, LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: YAMAMOTO, HIDEYUKI, EDAMURA, MANABU, IKENAGA, KAZUYUKI
Publication of US20020029851A1 publication Critical patent/US20020029851A1/en
Priority to US10/347,402 priority Critical patent/US6911157B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems

Definitions

  • the present invention relates to a plasma processing method and apparatus useful in the manufacturing of substrates for semiconductors devices, liquid crystal displays and so on, and more particularly, to apparatus process monitoring techniques useful for controlling process parameters associated with the plasma processing.
  • JP-A-8-298259 Japanese Patent No. 2666768 issued on Jun. 27, 1997 discloses a method which relies on a signal generated by a plasma emission spectrum monitor to control a variety of parameters such as RF power, processing pressure, gas flow amount, and so on to manage an etching state.
  • etching apparatuses perform an etching end-point determination for determining that etching has been completed using a change in the intensity of light emitted at a particular wavelength, the ratio of intensities of light emitted at a plurality of wavelengths, and so on.
  • process monitors such as an impedance monitor for measuring an impedance of a load including a current, voltage and a plasma of a high frequency circuit for generating the plasma, a mass spectrometer, and so on has been investigated, other than the plasma emission spectrum monitor, for higher level plasma processing and management of associated apparatuses.
  • there is a process monitor based on absorption of laser or infrared light at a laboratory level though it is seldom used in actual manufacturing lines.
  • the amount of information provided from these monitors is not sufficient since phenomena induced by a plasma within a process chamber is extremely complicated.
  • the plasma emission spectrum monitor encounters difficulties in determining, if light emitted by a plurality of dissociated species overlaps at the same wavelength, which of the dissociated species causes a change in the light. While this may be solved by mathmatical processing using a plurality of wavelengths, or the like, such a problem is not always solved by a good processing method in all cases.
  • At least one plasma process control parameter such as power supplied to a plasma, process pressure, gas flow rate and high frequency bias power to a wafer is changed for an extremely short time as compared with an entire plasma processing time, to the extent that such a change does not affect the result of plasma processing on the wafer, to monitor a temporal change in a plasma state which occurs at the time of changing.
  • FIG. 1 is a block diagram illustrating an embodiment of the present invention
  • FIG. 2 is a schematic diagram showing a change in power supplied from a plasma source power supply in the plasma etching according to a prior art method
  • FIG. 3 is a schematic diagram showing an operating method in the plasma etching according to one embodiment of the present invention.
  • FIG. 4 is a schematic diagram showing a change in the intensity of emitted light during a power-off period
  • FIG. 5 is a schematic diagram showing an exemplary operating method according to one embodiment of the present invention.
  • FIG. 6 is a schematic diagram showing a monitoring method according to one embodiment of the present invention.
  • FIG. 7 is a schematic diagram showing a monitoring method according to another embodiment of the present invention.
  • the present invention is not limited to the field of semiconductor device manufacturing but may be applied to a variety of fields such as manufacturing of liquid crystal displays, a variety of plasma surface processing, and so on.
  • embodiments will be described for a plasma etching apparatus for manufacturing semiconductor devices, taken as an example.
  • FIG. 1 illustrates one embodiment of the present invention.
  • a process chamber 1 in the figure is, for example, a vacuum chamber to which a pump 3 is connected through a variable conductance valve 2 .
  • a wafer stage 5 is disposed for carrying a semiconductor wafer 15 which is applied with a high frequency by the wafer stage 5 to control ion energy impinging on the wafer 15 .
  • a plasma source 4 connected to a radio frequency (RF) power supply 14 via a current/voltage impedance monitor 12 and a matching circuit 13 is disposed for generating a plasma 11 .
  • the RF power supply 14 which is pulse modulated, can intermittently turn off the power to the plasma source 4 .
  • a trigger signal 16 synchronized with the pulse modulation is inputted to a plasma emission spectrum monitor 7 which includes a detector 7 A for picking up light emitted from a plasma through a viewport 6 , and to current/voltage impedance monitors 12 , 8 disposed in a power supply line to the plasma source 4 and a bias line, respectively, so that these monitors are allowed to make measurements in synchronism with the timing of the pulse.
  • the bias line includes the RF power supply 9 and a matching circuit 10 , and is connected to the stage 5 .
  • Signals measured by these monitors are analyzed by a data analyzer 17 for their time response characteristics, fed back to an apparatus control system 18 , and sent to a computer system 18 for managing respective semiconductor manufacturing apparatuses in the semiconductor factory, and so on as data, where the signals serve as a data source for diagnosis of the apparatuses.
  • a data analyzer 17 for their time response characteristics, fed back to an apparatus control system 18 , and sent to a computer system 18 for managing respective semiconductor manufacturing apparatuses in the semiconductor factory, and so on as data, where the signals serve as a data source for diagnosis of the apparatuses.
  • this embodiment shows the plasma emission spectrum monitor and the current/voltage impedance monitors as examples of plasma process monitors, the present invention encompasses other monitoring means including optical, electrical, magnetic, mechanical, thermal, pressure, temperature, or other physical or chemical sensors.
  • FIG. 2 shows a change in the power supplied from the plasma source power supply during plasma etching in accordance with a prior art method.
  • the power is maintained constant from the generation of a plasma to cut-off of the plasma after the end of the etching.
  • FIG. 3 is a schematic diagram illustrating an operating method during plasma etching in accordance with one embodiment of the present invention.
  • the power supplied to a plasma is pulsatively cut, for example, for a time width of 10-100 ⁇ s at intervals of one second. Assuming that an etching time roughly lasts for 10 seconds, approximately 100 off-times are included therein.
  • the process monitors (sensors) for monitoring light emission and so on make measurements at timings in synchronism with the off times.
  • the ratio of an on-time and an off-time is 100,000.
  • the ratio is 10,000. Both ratios show sufficiently large values. It can therefore be said that the intermittently cut-off plasma will not substantially affect the result of etching on products.
  • FIG. 4 shows a waveform characteristic of a change in the intensity of light emitted by a plasma while the power supplied to the plasma is turned off. It can be seen from this characteristic that the profile of attenuation, i.e., attenuation pattern after power-off differs depending on the wavelength. Generally, with the off-time of such duration, the density of a dissociated species itself is not substantially reduced, so that the attenuation of the emitted light intensity after power-off corresponds to a reduction in the electron density and energy in the plasma. For example, light emitted from an atom attenuates rapidly since its excitation energy is high. However, light emitted from a molecule attenuates slowly due to its low excitation energy.
  • FIG. 5 shows an exemplary operating method in accordance to one embodiment of the present invention.
  • a generated plasma can increase its instability if the supplied power is completely shut off.
  • the supplied power is not completely shut off, but instead the power may be simply changed, as illustrated in FIG. 5, although this results in lower sensitivities of the process monitors. Similar effects are provided as well from this strategy.
  • the power from the bias power supply may be changed instead of the power supplied from the plasma source power supply in FIGS. 3 and 5.
  • data collected by the process monitors when a plasma is lit and cut off may include a larger amount of information than data collected by the process monitors during a period in which a plasma is normally generated.
  • FIG. 6 shows a monitoring method which makes use of this fact.
  • this method is disadvantageous in that it can take data only at two points, the method can check the stability of a reactor, particularly, a surface state thereof due to light emitted at a timing at which a plasma is cut off and a change in a current and a voltage of the plasma source.
  • FIG. 7 shows an embodiment of the present invention which is an example of varying a parameter such as pressure, flow rate, flow ratio or the like which exhibits a relatively slow response.
  • a short pulse such as the source power cannot be applied
  • an applied signal is oscillated to such an extent that the oscillated signal does not affect the result of etching.
  • a change in the amount of measurement caused by the oscillations is monitored by a process monitor, so that the state of a plasma in the reactor can be revealed at a higher sensitivity than the prior art method.
  • a specific sensor output and an associated processing control method according to the present invention will be described for etching of an insulating film such as SiO 2 , taken as an example.
  • a C 4 F 8 gas is added to a main Ar gas.
  • the C 4 F 8 gas is added to provide good etching and deposition performance.
  • the state of a chamber wall, on which polymer is deposited by the C 4 F 8 gas largely affects the plasma etching. For carrying out stable plasma etching for a large number of wafers, it is necessary to reveal the state of the chamber wall.
  • the operation monitoring method according to the embodiment shown in FIG. 6 is relied on to detect an Ar light emission attenuation curve at the time a plasma is cut off.
  • the attenuation of light emission is mainly caused by extinction of electrons.
  • electrons When the plasma is cut off, electrons mainly collide against the chamber wall and extinguish, so that the attenuation curve is largely affected by the state of the wall.
  • the data analyzer 17 determines that the chamber needs aging, when k is large, because the chamber wall is too clean, and determines that the chamber wall is extremely contaminated and therefore needs cleaning when k is too small. An appropriate supporting action is taken for the chamber in accordance with the result of the determination.
  • a CF 2 radical mainly drives forward the etching, so that this is the most important dissociated species. While light emitted from CF 2 radicals appears as a large number of peaks in an ultraviolet band of 200 to 300 nm, a high resolution spectrometer is required for detecting these peaks.
  • a high resolution spectrometer is large in size, whereas a spectrometer generally equipped in a manufacturing apparatus is small in size but has a low resolution incapable of identifying such peaks of CF 2 and distinguishing them from peaks of, for example, Si and so on which also appear in the same band.
  • the operating method according to the embodiment of the present invention shown in FIG. 3 is relied on to detect an attenuation curve representative of overlapping light emitted from CF 2 and Si, and light emitted from an atom which can be independently measured, such as peaks of Ar, as a reference, using the plasma emission spectrum monitor 7 .
  • the data analyzer 17 can analyze a contribution of CF 2 to the amount of emitted light from these attenuation curves. Then, the data analyzer 17 issues an instruction to the control system 18 to control the flow rate of C 4 F 8 , by way of example, such that the amount of CF 2 resulting from the analysis remains constant. As a result, a dissociated state of CF 2 is maintained constant, thereby making it possible to keep favorable results of etching for a multiplicity of wafers.
  • a control parameter such as power supplied to a plasma, process pressure, gas flow rate, high frequency bias power to a wafer, or the like is changed for an extremely short time as compared with an entire plasma processing time to the extent that such a change does not affect the result of plasma processing on a wafer to monitor a temporal change in a plasma state which may occur during the short time, thereby increasing the amount to information along a time axis even using a process monitor identical to that used in the prior art, with the result that the amount of information included in the collected data is significantly increased.
  • By controlling the plasma processing using signals generated by this method it is possible to accomplish good etching of wafers with finer patterns, high quality deposition, surface processing and so on.
US09/793,624 2000-09-12 2001-02-27 Plasma processing method and apparatus using dynamic sensing of a plasma environment Abandoned US20020029851A1 (en)

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JP2000276668A JP3565774B2 (ja) 2000-09-12 2000-09-12 プラズマ処理装置及び処理方法
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Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040177751A1 (en) * 2002-07-31 2004-09-16 Hydraulik-Ring Gmbh Oscillating Motor for a Camshaft Adjusting Device
US20050011611A1 (en) * 2002-07-12 2005-01-20 Mahoney Leonard J. Wafer probe for measuring plasma and surface characteristics in plasma processing environments
US20050062982A1 (en) * 2001-09-06 2005-03-24 Tatehito Usui Method and apparatus for determining endpoint of semiconductor element fabricating process and method and apparatus for processing member to be processed
US20050151544A1 (en) * 2003-08-14 2005-07-14 Advanced Energy Industries, Inc. Sensor array for measuring plasma characteristics in plasma processing environments
US20100062547A1 (en) * 2008-09-11 2010-03-11 Varian Semiconductor Equipment Associates, Inc. Technique for monitoring and controlling a plasma process with an ion mobility spectrometer
US8303763B2 (en) 2006-09-20 2012-11-06 Lam Research Corporation Measuring and controlling wafer potential in pulsed RF bias processing
US20150279624A1 (en) * 2014-03-25 2015-10-01 Hitachi High-Technologies Corporation Plasma processing apparatus
US20160064199A1 (en) * 2014-08-29 2016-03-03 Lam Research Corporation System, Method and Apparatus for Using Optical Data to Monitor RF Generator Operations
CN105578696A (zh) * 2015-12-23 2016-05-11 哈尔滨工业大学 一种测量空心阴极节流孔区等离子体密度的方法
US9564295B2 (en) 2014-11-04 2017-02-07 Samsung Electronics Co., Ltd. Diagnosis system for pulsed plasma
WO2017087378A1 (en) * 2015-11-16 2017-05-26 Tokyo Electron Limited Advanced optical sensor and method for plasma chamber
US10410840B2 (en) * 2014-02-12 2019-09-10 Tokyo Electron Limited Gas supplying method and semiconductor manufacturing apparatus
US10436717B2 (en) 2016-11-18 2019-10-08 Tokyo Electron Limited Compositional optical emission spectroscopy for detection of particle induced arcs in a fabrication process
US10446453B2 (en) 2017-03-17 2019-10-15 Tokyo Electron Limited Surface modification control for etch metric enhancement
US10453653B2 (en) 2016-09-02 2019-10-22 Tokyo Electron Limited Endpoint detection algorithm for atomic layer etching (ALE)
US10773282B2 (en) 2016-03-31 2020-09-15 Tokyo Electron Limited Controlling dry etch process characteristics using waferless dry clean optical emission spectroscopy
US10910201B1 (en) 2019-08-22 2021-02-02 Tokyo Electron Limited Synthetic wavelengths for endpoint detection in plasma etching
US20220162746A1 (en) * 2020-11-25 2022-05-26 Applied Materials, Inc. Waveform shape factor for pulsed pvd power

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7220937B2 (en) * 2000-03-17 2007-05-22 Applied Materials, Inc. Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination
US6894245B2 (en) * 2000-03-17 2005-05-17 Applied Materials, Inc. Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
US7196283B2 (en) * 2000-03-17 2007-03-27 Applied Materials, Inc. Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface
US8048806B2 (en) 2000-03-17 2011-11-01 Applied Materials, Inc. Methods to avoid unstable plasma states during a process transition
US8617351B2 (en) 2002-07-09 2013-12-31 Applied Materials, Inc. Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction
US7141757B2 (en) * 2000-03-17 2006-11-28 Applied Materials, Inc. Plasma reactor with overhead RF source power electrode having a resonance that is virtually pressure independent
US7030335B2 (en) * 2000-03-17 2006-04-18 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
KR100458328B1 (ko) * 2002-03-27 2004-11-26 주성엔지니어링(주) 플라즈마 감지장치
TWI283899B (en) * 2002-07-09 2007-07-11 Applied Materials Inc Capacitively coupled plasma reactor with magnetic plasma control
JP2004095663A (ja) * 2002-08-29 2004-03-25 Tokyo Electron Ltd プラズマ処理装置およびプラズマ処理方法
US7247218B2 (en) * 2003-05-16 2007-07-24 Applied Materials, Inc. Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power
US6967305B2 (en) * 2003-08-18 2005-11-22 Mks Instruments, Inc. Control of plasma transitions in sputter processing systems
JP4359521B2 (ja) * 2004-02-20 2009-11-04 東京エレクトロン株式会社 プラズマ処理装置及びその制御方法
US7531469B2 (en) * 2004-10-23 2009-05-12 Applied Materials, Inc. Dosimetry using optical emission spectroscopy/residual gas analyzer in conjunction with ion current
JP2006128380A (ja) 2004-10-28 2006-05-18 Toshiba Corp 半導体装置の製造方法および製造装置
US7359177B2 (en) * 2005-05-10 2008-04-15 Applied Materials, Inc. Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output
JP4620524B2 (ja) * 2005-05-17 2011-01-26 株式会社日立ハイテクノロジーズ プラズマ処理装置
US7632377B2 (en) 2006-01-24 2009-12-15 United Microelectronics Corp. Dry etching apparatus capable of monitoring motion of WAP ring thereof
US20080029484A1 (en) * 2006-07-25 2008-02-07 Applied Materials, Inc. In-situ process diagnostics of in-film aluminum during plasma deposition
JP4101280B2 (ja) * 2006-07-28 2008-06-18 住友精密工業株式会社 終点検出可能なプラズマエッチング方法及びプラズマエッチング装置
JP2010539443A (ja) * 2007-08-07 2010-12-16 ピヴォタル システムズ コーポレーション ガスの化学組成を同定するための方法および装置
JP2009229387A (ja) * 2008-03-25 2009-10-08 Kobelco Kaken:Kk 非定常発光体の分光解析方法およびその装置
JP5268625B2 (ja) * 2008-12-26 2013-08-21 株式会社日立ハイテクノロジーズ プラズマ処理装置
US8382999B2 (en) * 2009-03-26 2013-02-26 Applied Materials, Inc. Pulsed plasma high aspect ratio dielectric process
KR101572104B1 (ko) 2009-07-09 2015-11-26 위순임 반응 가스 발생기 및 이를 구비한 플라즈마 처리 시스템
JP5667382B2 (ja) * 2010-06-03 2015-02-12 学校法人中部大学 半導体基材の状態測定方法及び状態測定装置
US8501499B2 (en) * 2011-03-28 2013-08-06 Tokyo Electron Limited Adaptive recipe selector
JP5740246B2 (ja) * 2011-08-15 2015-06-24 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US9267605B2 (en) 2011-11-07 2016-02-23 Lam Research Corporation Pressure control valve assembly of plasma processing chamber and rapid alternating process
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JP5883769B2 (ja) * 2012-11-15 2016-03-15 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
WO2015021337A1 (en) 2013-08-07 2015-02-12 Xagenic Inc. Precision bipolar current-mode-digital-to-analog converter
US9336901B2 (en) * 2014-03-17 2016-05-10 Lam Research Corporation Track and hold feedback control of pulsed RF
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TW202309969A (zh) * 2021-05-06 2023-03-01 日商東京威力科創股份有限公司 電漿處理裝置及終點檢測方法
US20240094056A1 (en) * 2022-09-20 2024-03-21 Tokyo Electron Limited Optical Emission Spectroscopy for Advanced Process Characterization

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6060329A (en) * 1997-03-27 2000-05-09 Fujitsu Limited Method for plasma treatment and apparatus for plasma treatment

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2918892B2 (ja) * 1988-10-14 1999-07-12 株式会社日立製作所 プラズマエッチング処理方法
US5405488A (en) * 1993-09-13 1995-04-11 Vlsi Technology, Inc. System and method for plasma etching endpoint detection
JP2666768B2 (ja) * 1995-04-27 1997-10-22 日本電気株式会社 ドライエッチング方法及び装置
JP2001516963A (ja) * 1997-09-17 2001-10-02 東京エレクトロン株式会社 ガスプラズマ処理を監視しかつ管理するためのシステムおよび方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6060329A (en) * 1997-03-27 2000-05-09 Fujitsu Limited Method for plasma treatment and apparatus for plasma treatment

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* Cited by examiner, † Cited by third party
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US20050062982A1 (en) * 2001-09-06 2005-03-24 Tatehito Usui Method and apparatus for determining endpoint of semiconductor element fabricating process and method and apparatus for processing member to be processed
US7009715B2 (en) 2001-09-06 2006-03-07 Hitachi, Ltd. Method and apparatus for determining endpoint of semiconductor element fabricating process and method and apparatus for processing member to be processed
US7126697B2 (en) 2001-09-06 2006-10-24 Hitachi, Ltd. Method and apparatus for determining endpoint of semiconductor element fabricating process
US20050011611A1 (en) * 2002-07-12 2005-01-20 Mahoney Leonard J. Wafer probe for measuring plasma and surface characteristics in plasma processing environments
US20040177751A1 (en) * 2002-07-31 2004-09-16 Hydraulik-Ring Gmbh Oscillating Motor for a Camshaft Adjusting Device
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US20050151544A1 (en) * 2003-08-14 2005-07-14 Advanced Energy Industries, Inc. Sensor array for measuring plasma characteristics in plasma processing environments
US8303763B2 (en) 2006-09-20 2012-11-06 Lam Research Corporation Measuring and controlling wafer potential in pulsed RF bias processing
US8344318B2 (en) * 2008-09-11 2013-01-01 Varian Semiconductor Equipment Associates, Inc. Technique for monitoring and controlling a plasma process with an ion mobility spectrometer
US20100062547A1 (en) * 2008-09-11 2010-03-11 Varian Semiconductor Equipment Associates, Inc. Technique for monitoring and controlling a plasma process with an ion mobility spectrometer
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US9564295B2 (en) 2014-11-04 2017-02-07 Samsung Electronics Co., Ltd. Diagnosis system for pulsed plasma
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US10692705B2 (en) 2015-11-16 2020-06-23 Tokyo Electron Limited Advanced optical sensor and method for detecting an optical event in a light emission signal in a plasma chamber
CN105578696A (zh) * 2015-12-23 2016-05-11 哈尔滨工业大学 一种测量空心阴极节流孔区等离子体密度的方法
US10773282B2 (en) 2016-03-31 2020-09-15 Tokyo Electron Limited Controlling dry etch process characteristics using waferless dry clean optical emission spectroscopy
US11273469B2 (en) 2016-03-31 2022-03-15 Tokyo Electron Limited Controlling dry etch process characteristics using waferless dry clean optical emission spectroscopy
US10453653B2 (en) 2016-09-02 2019-10-22 Tokyo Electron Limited Endpoint detection algorithm for atomic layer etching (ALE)
US10436717B2 (en) 2016-11-18 2019-10-08 Tokyo Electron Limited Compositional optical emission spectroscopy for detection of particle induced arcs in a fabrication process
US10446453B2 (en) 2017-03-17 2019-10-15 Tokyo Electron Limited Surface modification control for etch metric enhancement
US10910201B1 (en) 2019-08-22 2021-02-02 Tokyo Electron Limited Synthetic wavelengths for endpoint detection in plasma etching
US20220162746A1 (en) * 2020-11-25 2022-05-26 Applied Materials, Inc. Waveform shape factor for pulsed pvd power
US20220356559A1 (en) * 2020-11-25 2022-11-10 Applied Materials, Inc. Waveform shape factor for pulsed pvd power

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US6911157B2 (en) 2005-06-28
TW535234B (en) 2003-06-01
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