US11296205B2 - Bipolar transistor - Google Patents

Bipolar transistor Download PDF

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Publication number
US11296205B2
US11296205B2 US16/591,312 US201916591312A US11296205B2 US 11296205 B2 US11296205 B2 US 11296205B2 US 201916591312 A US201916591312 A US 201916591312A US 11296205 B2 US11296205 B2 US 11296205B2
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collector
forming
insulating
well region
semiconductor substrate
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US20200111890A1 (en
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Alexis Gauthier
Pascal Chevalier
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STMicroelectronics Crolles 2 SAS
STMicroelectronics France SAS
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STMicroelectronics SA
STMicroelectronics Crolles 2 SAS
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Assigned to STMICROELECTRONICS (CROLLES 2) SAS reassignment STMICROELECTRONICS (CROLLES 2) SAS ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: GAUTHIER, ALEXIS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41708—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H—ELECTRICITY
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66242—Heterojunction transistors [HBT]
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
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    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
US16/591,312 2018-10-08 2019-10-02 Bipolar transistor Active 2040-02-10 US11296205B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US17/685,780 US11837647B2 (en) 2018-10-08 2022-03-03 Bipolar transistor
US18/383,926 US20240063290A1 (en) 2018-10-08 2023-10-26 Bipolar transistor

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Application Number Priority Date Filing Date Title
FR1859284 2018-10-08
FR1859284A FR3087047B1 (fr) 2018-10-08 2018-10-08 Transistor bipolaire

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US17/685,780 Division US11837647B2 (en) 2018-10-08 2022-03-03 Bipolar transistor

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US11296205B2 true US11296205B2 (en) 2022-04-05

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US17/685,780 Active US11837647B2 (en) 2018-10-08 2022-03-03 Bipolar transistor
US18/383,926 Pending US20240063290A1 (en) 2018-10-08 2023-10-26 Bipolar transistor

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US (3) US11296205B2 (fr)
CN (3) CN210723039U (fr)
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Publication number Priority date Publication date Assignee Title
FR3087047B1 (fr) 2018-10-08 2021-10-22 St Microelectronics Sa Transistor bipolaire
FR3113539B1 (fr) * 2020-08-24 2022-09-23 St Microelectronics Crolles 2 Sas Transistor bipolaire
FR3115393A1 (fr) 2020-10-19 2022-04-22 Stmicroelectronics (Crolles 2) Sas Transistor bipolaire et procédé de fabrication

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US3465214A (en) 1967-03-23 1969-09-02 Mallory & Co Inc P R High-current integrated-circuit power transistor
US4887144A (en) 1985-07-26 1989-12-12 Texas Instruments Incorporated Topside substrate contact in a trenched semiconductor structure and method of fabrication
US5596221A (en) 1994-09-29 1997-01-21 Mitsubishi Denki Kabushiki Kaisha Bipolar transistor with emitter double contact structure
EP1087424A1 (fr) 1999-09-23 2001-03-28 STMicroelectronics SA Procédé de fabrication d'un transistor bipolaire vertical auto-aligné
US20010017399A1 (en) 1999-10-14 2001-08-30 Katsuya Oda Bipolar transistor and manufacturing method thereof
US20020053705A1 (en) 2000-11-07 2002-05-09 Masao Kondo BICMOS semiconductor integrated circuit device and fabrication process thereof
US20030082882A1 (en) 2001-10-31 2003-05-01 Babcock Jeffrey A. Control of dopant diffusion from buried layers in bipolar integrated circuits
US20050023643A1 (en) 2003-07-30 2005-02-03 Innovative Technology Licensing, Llc Mechanically-stable BJT with reduced base-collector capacitance
US20050199909A1 (en) 2004-03-09 2005-09-15 Keiichi Murayama Heterojunction bipolar transistor and manufacturing method thereof
US6940149B1 (en) 2004-03-11 2005-09-06 International Business Machines Corporation Structure and method of forming a bipolar transistor having a void between emitter and extrinsic base
US20070275533A1 (en) 2006-05-25 2007-11-29 International Business Machines Corporation Semiconductor device structures with backside contacts for improved heat dissipation and reduced parasitic resistance
US20150311911A1 (en) 2006-09-27 2015-10-29 Taiwan Semiconductor Manufacturing Co., Ltd. Quantum Tunneling Devices and Circuits with Lattice-Mismatched Semiconductor Structures
US20090108373A1 (en) 2007-10-30 2009-04-30 International Business Machines Corporation Techniques for Enabling Multiple Vt Devices Using High-K Metal Gate Stacks
US20150140771A1 (en) 2008-12-12 2015-05-21 IHP GmbH - Innovations for High Performance Microelectronics/Leibniz-Institut Fur Innovative M Method for fabricating a bipolar transistor having self-aligned emitter contact
US20100187657A1 (en) 2009-01-27 2010-07-29 Infineon Technologies Ag Bipolar transistor with base-collector-isolation without dielectric
US20100276753A1 (en) 2009-04-30 2010-11-04 International Business Machines Corporation Threshold Voltage Adjustment Through Gate Dielectric Stack Modification
US20110147892A1 (en) 2009-12-21 2011-06-23 Chiu Tzuyin Bipolar Transistor with Pseudo Buried Layers
US20110159672A1 (en) 2009-12-31 2011-06-30 Chiu Tzuyin Novel Manufacturing Approach for Collector and N Type Buried Layer Of Bipolar Transistor
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CN117912945A (zh) 2024-04-19
CN111009574B (zh) 2024-01-30
US20240063290A1 (en) 2024-02-22
US11837647B2 (en) 2023-12-05
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