US10458019B2 - Film deposition apparatus having a peripheral spiral gas curtain - Google Patents
Film deposition apparatus having a peripheral spiral gas curtain Download PDFInfo
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- US10458019B2 US10458019B2 US13/935,935 US201313935935A US10458019B2 US 10458019 B2 US10458019 B2 US 10458019B2 US 201313935935 A US201313935935 A US 201313935935A US 10458019 B2 US10458019 B2 US 10458019B2
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- curtain
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- 230000008021 deposition Effects 0.000 title claims description 22
- 230000002093 peripheral effect Effects 0.000 title claims 4
- 239000007789 gas Substances 0.000 claims abstract description 131
- 239000012495 reaction gas Substances 0.000 claims abstract description 64
- 238000009826 distribution Methods 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 17
- 238000006243 chemical reaction Methods 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 230000004308 accommodation Effects 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45572—Cooled nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45593—Recirculation of reactive gases
Definitions
- the present disclosure relates to a gas spraying technique, and more particularly, to a gas shower device with gas curtain and a film deposition apparatus using the same.
- showerhead design can be the major factor affecting the flow field uniformity and deposition rate in the MOCVD process.
- showerheads are arranged at position at the top of a process chamber and covering an area corresponding to a wafer carrier inside the process chamber. Thereby, the showerheads that are disposed above the wafer carrier are used for spraying a reaction gas to a wafer loaded on the wafer carrier.
- the flow field uniformity and residence time of the reaction gases that are being projected out of the showerheads are the key factors affecting the LED binning and production cost. That is, when the reaction gases inside the process chamber are distributed uniformly for a long period of residence time, not only the gas utilization ratio is improved, but also the MOCVD deposition rate is enhanced, and as a consequence, the power consumption and production cost are reduced.
- the use of conventional showerheads for spraying reaction gases can generally cause a flow stagnation zone to happen in the center area of a process chamber due to overly concentrated distribution of reaction gases, and also the wavelength uniformity at wafer edge can be adversely affected. Consequently, a conventionally means for controlling the spraying of reaction gases into a process chamber while pumping the reaction gases to be exhausted out of the process chamber through a side of the process chamber is used for improving the flow field uniformity in the process chamber.
- the flow field uniformity can be improved by the drawing of vacuum pump, the reaction gases are going to be drawn away from the wafer faster than it is intended in an ideal condition after the reaction gases is sprayed on the wafer.
- the residence time of the reaction gases inside the process chamber is shortened, and as a consequence, the utilization rate of the reaction gases is reduced and eventually the deposition rate is adversely affected.
- the wavelength uniformity at wafer edge can also be adversely affected.
- the present disclosure relates to a gas shower device with gas curtain and a film deposition apparatus using the same, according to which there is a gas curtain being provided surrounding the showerheads of the gas shower device so as to be used for confining the spray of a reaction gas in a specific area for controlling the reaction gas inside a process chamber to reach a specific concentration and also increasing the residence time of the reaction gas inside a reaction zone of the process chamber Thereby, the utilization rate of the reaction gas is improved, the deposition rate is enhanced and thus the production cost can be reduced.
- the present disclosure provides a gas shower device having gas curtain, which comprises a first gas shower unit for injecting a reaction gas, thereby forming a reaction gas region; and a second gas shower unit, arranged around a periphery of the first gas shower unit, further comprising: a buffer gas chamber for providing a buffer gas, and a being connected to the buffer gas chamber circumferentially furnished at the periphery of the first shower unit, and having a plurality of through-holes provided for letting the buffer gas to pass therethrough to generate a gas curtain surrounding the periphery of the process gas region.
- the present disclosure provides a film deposition apparatus, which comprises: a process chamber, a first shower unit, a vacuum pump and a second shower unit; wherein, the first and the second shower units are arranged on top of the process chamber for injecting a reaction gas into the process chamber and thus forming a reaction gas region; the vacuum pump is arranged coupling to the process chamber for causing a vacuum negative pressure to build inside the process chamber; the second shower unit that is located on top of the process chamber is further being arranged surrounding the first shower unit and is further comprised of: a buffer gas chamber for providing a buffer gas, and a gas curtain distribution plate, being connected to the buffer gas chamber circumferentially furnished at the periphery of the first shower unit, and having a plurality of through-holes provided for letting the buffer gas to pass therethrough to generate a gas curtain surrounding the periphery of the process gas region.
- FIG. 1 is a sectional view of a gas shower device with gas curtain according to an embodiment of the present disclosure.
- FIG. 2A is a sectional view of a distribution plate in a second shower unit according to an embodiment of the present disclosure.
- FIG. 2B is a top view of a distribution plate in a second shower unit according to an embodiment of the present disclosure.
- FIG. 3 is a top view of a panel being formed as the integration of the distribution plates of the first and the second shower units according to an embodiment of the present disclosure.
- FIG. 4 is a sectional view of a film deposition apparatus according to an embodiment of the present disclosure.
- FIG. 5A and FIG. 5B are schematic diagrams showing respectively a flow field inside a process chamber when there is no gas curtain existed and when there is gas curtain existed.
- FIG. 6 is a sectional view of a film deposition apparatus according to another embodiment of the present disclosure.
- FIG. 1 is a sectional view of a gas shower device with gas curtain according to an embodiment of the present disclosure.
- the gas shower device 2 in this embodiment is comprised of: a first shower unit 20 and a second shower unit 21 , in which the first shower unit 20 is provided for injecting a reaction gas 90 and thus forming a reaction gas region 92 .
- the first shower unit is configured with a reaction gas supply chamber 200 and a gas distribution plate 201 .
- the reaction gas supply chamber 200 is formed with an accommodation space 2000 therein for receiving the reaction gas 90 that is being fed into the accommodation space 200 via at least one channel 202 ; and the gas distribution plate 201 is further configured with a plurality of gas holes 2010 for injecting the reaction gas 90 onto a substrate.
- the first shower unit 20 is formed in a circular shape, and correspondingly, both the gas distribution plate 201 and the reaction gas supply chamber 200 are circular structures. It is noted that although the first shower unit is formed in a circular shape, but it is not limited thereby.
- the first shower unit 20 in the embodiment of FIG. 1 is designed to provide only one kind of reaction gas, but it is also not limited thereby, and thus the first shower unit 20 can be designed to provide a plurality of reaction gases at the same time.
- the second shower unit 21 is arranged surrounding the periphery of the first shower unit 20 .
- the first shower unit 20 is formed in a circular shape, and as a consequence, the second shower unit 21 should be formed as a ring that is connected to the circular first shower unit 20 .
- the cooling unit 22 can be disposed at any position at will in the gas shower device of the present disclosure, and thus is not limited by the present embodiment.
- the second shower unit 21 is further configured with a buffer gas chamber 210 and a curtain distribution plate 211 .
- the buffer gas chamber 210 that is arranged surrounding the first shower unit 20 is formed with an accommodation space 2100 for receiving a buffer gas 91 .
- the curtain distribution plate 211 is connected to the bottom of the buffer gas chamber 210 and is also arranged surrounding the first shower unit 20 .
- the curtain distribution plate 211 is configured with a plurality of through holes 212 that are provided for the buffer gas 92 to be injected therethrough, and thereby forming a gas curtain 93 surrounding a periphery of the reaction gas region 92 .
- the buffer gas can be the same gas as the reaction gas 90 , or can be some other kind of gas that is different from and is not react with the reaction gas, or can simply be an inert gas, such as nitrogen or helium, but is not limited thereby.
- each of the plural through holes 212 is a vertical via hole that is arranged parallel in a Z-axis direction.
- each of the plural through holes 212 a can be a oblique via hole that is arranged formed an included angle with the Z-axis direction. Consequently, by the oblique through holes 212 a , the gas curtain induced from the injection of the curtain distribution plate 211 is a spiral gas curtain, as shown in FIG. 2A .
- the cross section of each of the through holes can be a circular or a polygon. Please refer to FIG.
- each of the trough holes 212 B is formed in a shape like a slit, and also can be used for generating a gas curtain.
- each of the slit-like through holes 212 b can also be a vertical via hole, as those shown in FIG. 1 , or can be an oblique via hole, as those shown in FIG. 2A .
- FIG. 3 is a top view of a panel being formed as the integration of the distribution plates of the first and the second shower units according to an embodiment of the present disclosure.
- the gas distribution plate 201 of the first shower unit 20 is integrally formed with the curtain distribution plate 211 of the second shower unit 21 , by that the gas holes 2010 and the through holes 212 are formed on a same plate 23 in a manner that the via holes 231 that are located within an area defined by the dotted line 230 are arranged at positions corresponding to the first shower unit 20 for allowing the reaction gas to flow therethrough, and the via holes 232 located outside the area defined by the dotted line 230 are arranged at positions corresponding to the second shower unit 21 for allowing the buffer gas to flow therethrough.
- the buffer gas is able to flow through the via holes 232 and form a gas curtain enclosing the reaction gas region formed from the injection of the reaction gas through the via holes 231 .
- FIG. 4 is a sectional view of a film deposition apparatus according to an embodiment of the present disclosure.
- the film deposition apparatus 3 is a MOCVD device, but it is not limited thereby and thus can be a plasma enhanced chemical vapor deposition (PECVD) device, an atmosphere pressure chemical vapor deposition (APCVD) device, or a low pressure chemical vapor deposition (LPCVD) device for instance.
- PECVD plasma enhanced chemical vapor deposition
- APCVD atmosphere pressure chemical vapor deposition
- LPCVD low pressure chemical vapor deposition
- the film deposition apparatus 3 comprises: a process chamber 30 , a vacuum pump 31 and a gas shower device 2 , in which the process chamber 30 is formed with a processing space 300 where is provided for a platform 32 to be arranged therein while allowing the platform 32 to move up and down in a Z-axis direction. Accordingly, a substrate 94 that is to be processed is carried on the platform 32 , and in an embodiment, the substrate 94 can be an LED substrate.
- the vacuum pump 31 is arranged connecting to the openings 301 formed respectively on two sides of the process chamber 30 and used for causing a vacuum negative pressure to build inside the processing space 300 of the process chamber 30 .
- Center portions of the respective side openings 301 are in line with the plurality of gas through holes 2010 provided in gas distribution plate 201 and are in line with the plurality of buffer gas through holes 212 provided in curtain distribution plate 211 .
- the substrate platform 32 is disposed within the processing space 300 below respective side openings 301 .
- the gas shower device 2 is substantially the gas shower device shown in FIG. 1 , and thus will not be described further herein.
- a reaction gas 90 is injected into the processing space 300 of the process chamber 30 from a first showerhead unit 20 that is arranged on top of the process chamber 30 , by that a reaction gas region 92 is formed inside the processing space 300 .
- the vacuum pump 31 is activated for vacuuming the processing space 300 of the process chamber 30 for causing a vacuum negative pressure to build inside the process chamber 30 .
- the second showerhead unit 21 drives a buffer gas 91 to flow from the buffer gas chamber 210 to be projected out of the curtain distribution plate 211 through the plural through holes 212 so as to form a gas curtain 93 surrounding the reaction gas region 92 .
- the vacuum negative pressure caused by the vacuum pump 31 will have no affection upon the flowing of the reaction gas 90 inside the reaction gas region 92 , so that the residence time of the reaction gas 90 inside the process chamber 300 can be prolonged.
- the reaction gas 90 injected from the first showerhead unit 20 can maintain to flow vertically downward to the substrate 94 without being affected by the vacuum negative pressure caused by the vacuum pump 31 , which is beneficial to the increasing of film deposition rate since the residence time of the reaction gas 90 inside the reaction gas region 92 is improved. It is noted that the improvement over the residence time of the reaction gas 90 inside the reaction gas region 92 is also beneficial to the increasing of the utilization rate of the reaction gas 90 .
- FIG. 5A and FIG. 5B are schematic diagrams showing respectively a flow field inside a process chamber when there is no gas curtain existed and when there is gas curtain existed.
- FIG. 5A shows a flow field inside a process chamber without the protection of a gas curtain
- FIG. 5B shows a flow field inside a process chamber with the protection of a gas curtain.
- FIG. 5A in a condition when the flow of reaction gas 90 encounters the rotating platform 32 and is flowing without the protection of a gas curtain, there will be a great amount of reverse flow 95 being induced, which can easily be attracted by the vacuum negative pressure so as to flow out of the process chamber, and thus, the residence time of the reaction gas 90 inside the process chamber is reduced.
- FIG. 6 is a sectional view of a film deposition apparatus according to another embodiment of the present disclosure.
- the film deposition apparatus of FIG. 6 is constructed basically the same as the one shown in FIG. 4 , but is different in that: in this embodiment of FIG.
- the gas distribution plate of the first shower unit 20 is integrally formed with the curtain distribution plate of the second shower unit 21 , by that the g gas distribution plate and the curtain distribution plate are formed on a same plate 23 in a manner that the via holes 231 are arranged at positions corresponding to the first shower unit 20 for allowing the reaction gas 90 to flow therethrough so as to form a reaction gas region 92 , and the via holes 232 are arranged at positions corresponding to the second shower unit 21 for allowing the buffer gas to flow therethrough so as to formed a gas curtain 93 surrounding the periphery of the reaction gas region 92 .
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Abstract
Description
Claims (5)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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TW101140760A TWI480417B (en) | 2012-11-02 | 2012-11-02 | Air showr device having air curtain and apparatus for depositing film using the same |
TW101140760 | 2012-11-02 | ||
TW101140760A | 2012-11-02 |
Publications (2)
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US20140123900A1 US20140123900A1 (en) | 2014-05-08 |
US10458019B2 true US10458019B2 (en) | 2019-10-29 |
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US13/935,935 Active 2035-10-14 US10458019B2 (en) | 2012-11-02 | 2013-07-05 | Film deposition apparatus having a peripheral spiral gas curtain |
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Country | Link |
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US (1) | US10458019B2 (en) |
KR (1) | KR101515896B1 (en) |
CN (1) | CN103805964B (en) |
TW (1) | TWI480417B (en) |
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CN103805964A (en) | 2014-05-21 |
KR101515896B1 (en) | 2015-04-29 |
TW201418515A (en) | 2014-05-16 |
TWI480417B (en) | 2015-04-11 |
KR20140057136A (en) | 2014-05-12 |
CN103805964B (en) | 2016-06-29 |
US20140123900A1 (en) | 2014-05-08 |
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