US10454479B2 - Inverter with balanced voltages across internal transistors - Google Patents

Inverter with balanced voltages across internal transistors Download PDF

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US10454479B2
US10454479B2 US16/111,238 US201816111238A US10454479B2 US 10454479 B2 US10454479 B2 US 10454479B2 US 201816111238 A US201816111238 A US 201816111238A US 10454479 B2 US10454479 B2 US 10454479B2
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type transistors
voltage
transistors
coupled
type
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US20190123747A1 (en
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Chih-Sheng Chen
Tien-Yun Peng
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Richwave Technology Corp
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Richwave Technology Corp
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00369—Modifications for compensating variations of temperature, supply voltage or other physical parameters
    • H03K19/00384—Modifications for compensating variations of temperature, supply voltage or other physical parameters in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0013—Arrangements for reducing power consumption in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/20—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits

Definitions

  • This invention is related to an inverter, and more particularly, is related to an inverter with balanced voltages across internal transistors.
  • the inverter is a logic gate to implement logic NOT in digital logic circuits. That is, the inverter can output a high voltage signal while receiving a low voltage signal, and can output a low voltage signal while receiving a high voltage signal.
  • the inverter can be implemented by an N-type transistor and a P-type transistor coupled in series.
  • the inverters are also used as signal buffers or delay elements for output signals, and can be applied to many kinds of circuits.
  • the inverter when the inverter is operated with high voltages, the inverter may include more series-connected transistors to increase the overall voltage handling ability.
  • the cross voltages applied on the transistors may be different, some of the transistors may have to endure high cross voltages for a long time, which may cause damages to the transistors and lower the system stability.
  • the inverter includes a first system voltage terminal, a second system voltage terminal, an output terminal, a plurality of P-type transistors, a plurality of N-type transistors, and a first voltage drop impedance element.
  • the first system voltage terminal receives a first voltage
  • the second system voltage terminal receives a second voltage
  • the plurality of P-type transistors are coupled in series between the first system voltage terminal and the output terminal.
  • the plurality of N-type transistors are coupled in series between the output terminal and the second system voltage terminal.
  • the first voltage drop impedance element is coupled in parallel with a first N-type transistor of the plurality of N-type transistors. The impedance of the first voltage drop impedance element is smaller than the impedance of the first N-type transistor when the first N-type transistor is turned off.
  • the inverter includes a first system voltage terminal, a second system voltage terminal, an output terminal, a plurality of P-type transistors, and a plurality of N-type transistors.
  • the first system voltage terminal receives a first voltage
  • the second system voltage terminal receives a second voltage.
  • the plurality of P-type transistors are coupled in series between the first system voltage terminal and the output terminal.
  • the plurality of N-type transistors are coupled in series between the output terminal and the second system voltage terminal.
  • the channel width-to-length ratio of a first N-type transistor of the plurality of N-type transistors is greater than the channel width-to-length ratio of a second N-type transistor of the plurality of N-type transistors.
  • FIG. 1 shows an inverter according to one embodiment of the present invention.
  • FIG. 2 shows an inverter according to another embodiment of the present invention.
  • FIG. 3 shows an inverter according to another embodiment of the present invention.
  • FIG. 4 shows an inverter according to another embodiment of the present invention.
  • FIG. 5 shows an inverter according to another embodiment of the present invention.
  • FIG. 6 shows an inverter according to another embodiment of the present invention.
  • FIG. 7 shows an inverter according to another embodiment of the present invention.
  • FIG. 8 shows an inverter according to another embodiment of the present invention.
  • FIG. 9 shows an inverter according to another embodiment of the present invention.
  • FIG. 1 shows an inverter 100 according to one embodiment of the present invention.
  • the inverter 100 includes a first system voltage terminal 110 , a second system voltage terminal 120 , an output terminal OUT, P-type transistors P 1 and P 2 , N-type transistors N 1 and N 2 , and voltage drop impedance elements 130 1 and 130 2 .
  • the P-type transistors P 1 and P 2 can be coupled in series between the first system voltage terminal 110 and the output terminal OUT, and the N-type transistors N 1 and N 2 can be coupled in series between the output terminal OUT and the second system voltage terminal 120 .
  • the first system voltage terminal 110 can receive a first voltage V 1
  • the second system voltage terminal 120 can receive a second voltage V 2 .
  • the first voltage V 1 can be higher than the second voltage V 2 .
  • the first voltage V 1 can be used to provide the high voltage of the inverter 100 , and can be, for example, 2.5V
  • the second voltage V 2 can be used to provide the low voltage of the inverter 100 , and can be, for example, ⁇ 2.5V.
  • the first voltage V 1 can be the high voltage of the system
  • the second voltage V 2 can be the ground voltage of the system.
  • the P-type transistor P 1 has a first terminal, a second terminal, and a control terminal.
  • the second terminal of the P-type transistor P 1 is coupled to the output terminal OUT.
  • the P-type transistor P 2 has a first terminal, a second terminal, and a control terminal.
  • the first terminal of the P-type transistor P 2 is coupled to the first system voltage terminal 110
  • the second terminal of the P-type transistor P 2 is coupled to the first terminal of the P-type transistor P 1 .
  • the N-type transistor N 1 has a first terminal, a second terminal, and a control terminal.
  • the first terminal of the N-type transistor N 1 is coupled to the output terminal OUT.
  • the N-type transistor N 2 has a first terminal, a second terminal, and a control terminal.
  • the first terminal of the N-type transistor N 2 is coupled to the second terminal of the N-type transistor N 1 and the second terminal of the N-type transistor N 2 is coupled to the second system voltage terminal 120 .
  • control terminals of the P-type transistors P 1 and P 2 and the control terminals of the N-type transistors N 1 and N 2 can be coupled together for receiving the same control signal SIG IN .
  • the control signal SIG IN is at a high voltage, e.g. the first voltage V 1
  • the P-type transistors P 1 and P 2 will be turned off and the N-type transistors N 1 and N 2 will be turned on, pulling down the output signal SIG OUT outputted from the output terminal OUT to be close to the second voltage V 2 .
  • the P-type transistors P 1 and P 2 when the control signal SIG IN is at a low voltage, e.g. the second voltage V 2 , the P-type transistors P 1 and P 2 will be turned on and the N-type transistors N 1 and N 2 will be turned off, pulling up the output signal SIG OUT outputted from the output terminal OUT to be close to the first voltage V 1 .
  • the N-type transistors N 1 and N 2 are turned off, and the total cross voltage applied on the N-type transistors N 1 and N 2 would be almost equal to the voltage difference between the first voltage V 1 and the second voltage V 2 . That is, the N-type transistors N 1 and N 2 together would have to endure the voltage difference between the first voltage V 1 and the second voltage V 2 .
  • the gate-to-source voltages of these two transistors are different. Therefore, when turned off, the impedance of the N-type transistors N 1 and N 2 would be quite different, resulting in unequal drain-to-source voltages of these two transistors. That is, the cross voltages applied on the N-type transistors N 1 and N 2 are not balanced. For example, if the first voltage V 1 is 2.5V and the second voltage V 2 is ⁇ 2.5V, then the N-type transistors N 1 and N 2 would have to endure a total of 5V together.
  • the cross voltage applied on the N-type transistor N 1 may be more than 3V while the cross voltage applied on the N-type transistor N 2 may be less than 2V.
  • the turned-off N-type transistor N 1 may break down, resulting in abnormal operations of the inverter 100 and causing instability of the system.
  • the voltage drop impedance element 130 1 is coupled in parallel with the N-type transistor N 1 , and the impedance of the voltage drop impedance element 130 1 is smaller than the impedance of the N-type transistor N 1 when the N-type transistor N 1 is turned off.
  • the voltage drop impedance element 130 2 is coupled in parallel with the N-type transistor N 2 , and the impedance of the voltage drop impedance element 130 2 is smaller than the impedance of the N-type transistor N 2 when the N-type transistor N 2 is turned off.
  • the voltage drop impedance elements 130 1 and 130 2 can form a current path between the output terminal OUT and the second system voltage terminal 120 . Since the impedances of the voltage drop impedance elements 130 1 and 130 2 are smaller than the impedances of the N-type transistors N 1 and N 2 when the N-type transistors N 1 and N 2 are turned off, the current flowing through the voltage drop impedance elements 130 1 and 130 2 will be greater than the leakage current flowing through the N-type transistors N 1 and N 2 when the N-type transistors N 1 and N 2 are turned off.
  • the impedance of the voltage drop impedance elements 130 1 and 130 2 should be greater than 0.
  • the effective impedance of the voltage drop impedance element 130 1 in parallel with the N-type transistor N 1 being turned off is substantially equal to the effective impedance of the voltage drop impedance element 130 2 in parallel with the N-type transistor N 2 being turned off, then the voltage between the output terminal OUT and the second system voltage terminal 120 will be endured by the voltage drop impedance element 130 1 coupled in parallel with the N-type transistor N 1 and the voltage drop impedance element 130 2 coupled in parallel with the N-type transistor N 2 equally.
  • the N-type transistor N 1 and N 2 would have the same cross voltages. Consequently, the issue of system instability caused by unbalanced cross voltages on the N-type transistors N 1 and N 2 can be mitigated.
  • the effective impedance can be referred to as effective resistance.
  • the impedance of the voltage drop impedance element 130 1 is much smaller than the impedance of the N-type transistor N 1 when the N-type transistor N 1 is turned off, for example, ten times smaller, then the current flowing through the voltage drop impedance element 130 1 would be ten times greater than the current flowing through the N-type transistor N 1 . Therefore, the cross voltage applied on the N-type transistor N 1 would be dominated by the voltage drop impedance element 130 1 .
  • the impedance of the voltage drop impedance element 130 2 is much smaller than the impedance of the N-type transistor N 2 when the N-type transistor N 2 is turned off, for example, ten times smaller, then the current flowing through the voltage drop impedance element 130 2 would be ten times greater than the current flowing through the N-type transistor N 2 . Therefore, the cross voltage applied on the N-type transistor N 2 would be dominated by the voltage drop impedance element 130 2 .
  • the N-type transistors N 1 and N 2 will have similar cross voltages, mitigating the system instability caused by high cross voltages applied on only some of the transistors.
  • the voltage drop impedance element 130 1 can include X diodes D 1 coupled in series, and the voltage drop impedance element 130 2 can include Y diodes D 2 coupled in series.
  • the diodes D 1 are independent from the N-type transistor N 1
  • the diodes D 2 are independent from the N-type transistor N 2 .
  • the N-type transistors N 1 and N 2 have the same electronic characteristics, X and Y can be the same integer greater than 1.
  • the effective impedance of the voltage drop impedance element 130 1 in parallel with the N-type transistor N 1 being turned off would be equal to the effective impedance of the voltage drop impedance element 130 2 in parallel with the N-type transistor N 2 being turned off, ensuring the cross voltages applied on the N-type transistors N 1 and N 2 to be the same.
  • X and Y may be chosen to be different values so the cross voltages applied on the N-type transistor N 1 and N 2 can still be substantially the same.
  • each of the diodes D 1 and D 2 can be in a state close to being turned on but not being turned on completely when the output terminal OUT outputs the high voltage.
  • each of the diodes D 1 and D 2 has an anode and a cathode, and for each of the diodes D 1 and D 2 , the voltage at the anode would be higher than the voltage at the cathode. That is, when the output terminal OUT outputs the high voltage, each of the diodes D 1 and D 2 can be forward biased and can be in the state close to being turned on but not fully turned on. However, this is not to limit the scope of the present invention.
  • FIG. 2 shows an inverter 200 according to one embodiment of the present invention.
  • the inverters 100 and 200 have similar structures and can be operated with similar principles. However, the main difference between these two inverters is in that the voltage of the anode is lower than the voltage at the cathode for each of the diodes D 1 in the voltage drop impedance element 230 1 , and the voltage of the anode is lower than the voltage at the cathode for each of the diodes D 2 in the voltage drop impedance element 230 2 .
  • the output terminal OUT outputs the high voltage
  • each of the diodes D 1 and D 2 is reverse biased, and is in the state close to being turned on but not fully turned on.
  • the reverse biased diodes may provide even greater impedance than the forward biased diodes, the number of diodes required by the voltage drop impedance elements 230 1 and 230 2 can be smaller than the number of diodes required by the voltage drop impedance elements 130 1 and 130 2 .
  • the inverters 100 and 200 use diodes to implement the voltage drop impedance elements 130 1 , 130 2 , 230 1 , and 230 2 .
  • the inverter can also use diode-connected transistors coupled in series, resistors, or other types of elements to implement the voltage drop impedance elements.
  • FIG. 3 shows an inverter 300 according to one embodiment of the preset invention. The inverters 100 and 300 have similar structures and can be operated with similar principles.
  • the voltage drop impedance element 330 1 includes X diode-connected transistors M 1 coupled in series
  • the voltage drop impedance element 330 2 includes Y diode-connected transistors M 2 coupled in series.
  • the transistors M 1 and M 2 can be N-type transistors. Also, for each of the transistors M 1 , the gate can be coupled to its drain, so that the transistor M 1 would behave like a diode. Similarly, for each of the transistors M 2 , the gate can be coupled to its drain, so that the transistor M 2 would behave like a diode. Also, the present invention does not limit the transistors M 1 and M 2 to N-type transistors. In some other embodiments, the transistors M 1 and M 2 can be P-type transistors, and the gates of the transistors M 1 and M 2 would be coupled to their drain accordingly, so the transistors M 1 and M 2 can be operated as diodes.
  • the voltage drop impedance elements coupled in parallel with different N-type transistors may have different resistant values or the same resistant value.
  • the voltage drop impedance element 330 1 can include X diode-connected transistors M 1 coupled in series while the voltage drop impedance element 330 2 can include Y diode-connected transistors M 2 coupled in series.
  • X and Y can be corresponding to the same integer greater than 1.
  • the effective impedance of the voltage drop impedance element 330 1 in parallel with the N-type transistor N 1 being turned off would be equal to the effective impedance of the voltage drop impedance element 330 2 in parallel with the N-type transistor N 2 being turned off, ensuring the cross voltages applied on the N-type transistors N 1 and N 2 to be the same.
  • X and Y may be chosen to be different values so the cross voltages of the N-type transistor N 1 and N 2 can still be substantially the same.
  • the impedances of the voltage drop impedance elements 330 1 and 330 2 would still be much smaller than the impedances of the N-type transistors N 1 and N 2 when the N-type transistors N 1 and N 2 are turned off. Therefore, the voltage drop impedance elements 330 1 and 330 2 will still dominate the cross voltages applied on the N-type transistors N 1 and N 2 .
  • the cross voltages applied on the N-type transistors N 1 and N 2 can still be substantially balanced, mitigating the system instability caused by high cross voltages applied on only some of the transistors. Consequently, the design flow and the manufacturing process of the inverter 300 can be further simplified.
  • FIG. 4 shows an inverter 400 according to one embodiment of the present invention.
  • the inverters 100 and 400 have similar structures and can be operated with similar principles. However, the main difference between these two inverters is in that the voltage drop impedance element 430 1 includes a resistor R 1 and the voltage drop impedance element 430 2 includes a resistor R 2 .
  • the cross voltages applied on the N-type transistors N 1 and N 2 can be adjusted to be balanced, mitigating the system instability caused by high cross voltages applied on only some of the transistors.
  • the inverters 100 to 400 can keep the balance between the cross voltages applied on the N-type transistors N 1 and N 2 even without the voltage drop impedance elements 130 2 , 230 2 , 330 2 , and 430 2 but only with the voltage drop impedance elements 130 1 , 230 1 , 330 1 , and 430 1 , or without the voltage drop impedance elements 130 1 , 230 1 , 330 1 , and 430 1 but only with the voltage drop impedance elements 130 2 , 230 2 , 330 2 , and 430 2 .
  • the inverters 100 to 400 include the voltage drop impedance elements 130 1 to 430 1 coupled in parallel with the N-type transistor N 1 and the voltage drop impedance elements 130 2 to 430 2 coupled in parallel with the N-type transistor N 2 , but the inverters 100 to 400 do not include the voltage drop impedance elements coupled in parallel with the P-type transistors P 1 and P 2 .
  • the inverter may also include the voltage drop impedance elements coupled in parallel with the P-type transistors P 1 and P 2 .
  • FIG. 5 shows an inverter 500 according to one embodiment of the present invention.
  • the inverters 500 and 300 have similar structures and can be operated with similar principles. However, the main difference between these two inverters is in that the inverter 500 further includes the voltage drop impedance elements 540 1 and 540 2 .
  • the voltage drop impedance element 540 1 is coupled in parallel with the P-type transistor P 1 , and the impedance of the voltage drop impedance element 540 1 is smaller than the impedance of the P-type transistor P 1 when the P-type transistor P 1 is turned off.
  • the voltage drop impedance element 540 2 is coupled in parallel with the P-type transistor P 2 , and the impedance of the voltage drop impedance element 540 2 is smaller than the impedance of the P-type transistor P 2 when the P-type transistor P 2 is turned off.
  • the P-type transistors P 1 and P 2 when the P-type transistors P 1 and P 2 are turned off, the P-type transistors P 1 and P 2 will have to endure the voltage between the first system voltage terminal 110 and the output terminal OUT.
  • the voltage drop impedance elements 540 1 and 540 2 can form a current path between the first system voltage terminal 110 and the output terminal OUT.
  • the impedances of the voltage drop impedance elements 540 1 and 540 2 are smaller than the impedances of the P-type transistors P 1 and P 2 when the P-type transistors P 1 and P 2 are turned off, the current flowing through the voltage drop impedance elements 540 1 and 540 2 would be greater than the leakage current flowing through the P-type transistors P 1 and P 2 when the P-type transistors P 1 and P 2 are turned off. In this case, by properly selecting the voltage drop impedance elements 540 1 and 540 2 , the cross voltages applied on the P-type transistors P 1 and P 2 can be balanced.
  • the effective impedance of the voltage drop impedance element 540 1 in parallel with the P-type transistor P 1 being turned off is substantially equal to the effective impedance of the voltage drop impedance element 540 2 in parallel with the P-type transistor P 2 being turned off, then the voltage between the first system voltage terminal 110 and the output terminal OUT will be endured by the voltage drop impedance element 540 1 coupled in parallel with the P-type transistor P 1 and the voltage drop impedance element 540 2 coupled in parallel with the P-type transistor P 2 equally.
  • the P-type transistor P 1 and P 2 would have the same cross voltages. Consequently, the issue of system instability caused by unbalanced cross voltages on the P-type transistors P 1 and P 2 can be mitigated.
  • the inverter 500 is operated with direct current (DC) power, the effective impedance can be referred to as effective resistance.
  • the voltage drop impedance element 540 1 can be implemented by a plurality of diode-connected transistors M 3 coupled in series, and the voltage drop impedance element 540 2 can be implemented by a plurality of diode-connected transistors M 4 coupled in series.
  • the transistors M 3 and M 4 can be N-type transistors. However, in some embodiments, the transistors M 3 and M 4 can also be P-type transistors.
  • the voltage drop impedance elements 540 1 and 540 2 can be implemented by a plurality of diodes coupled in series or a resistor, such as the voltage drop impedance elements 130 1 and 130 2 shown in FIG. 1 , the voltage drop impedance elements 230 1 and 230 2 shown in FIG. 2 , or the voltage drop impedance elements 430 1 and 430 2 shown in FIG. 4 .
  • FIG. 6 shows an inverter 600 according to one embodiment of the present invention.
  • the control terminals of the N-type transistors N 1 and N 2 and the control terminals of the P-type transistors P 1 and P 2 can all receive the same control signal SIG IN ; therefore, the P-type transistors P 1 and P 2 are operated synchronously, and the N-type transistors N 1 and N 2 are operated synchronously. Also, when the P-type transistors P 1 and P 2 are turned on, the N-type transistors N 1 and N 2 are turned off, and when the P-type transistors P 1 and P 2 are turned off, the N-type transistors N 1 and N 2 are turned on. However, this is not to limit the present invention.
  • the N-type transistors N 1 and N 2 of the inverter 600 can receive different control signals SIG INN1 and SIG INN2
  • the P-type transistors P 1 and P 2 of the inverter 600 can receive different control signals SIG INP1 and SIG INP2 .
  • the P-type transistors P 1 and P 2 can still be operated synchronously, and the N-type transistors N 1 and N 2 can still be operated synchronously.
  • the P-type transistors P 1 and P 2 are turned on, the N-type transistors N 1 and N 2 are turned off, and when the P-type transistors P 1 and P 2 are turned off, the N-type transistors N 1 and N 2 are turned on.
  • the N-type transistors N 1 and N 2 have to be turned off. For example, if the first voltage V 1 is 6V, and the second voltage V 2 is 0V, then the control signals SIG INP1 and SIG INP2 should turn on the P-type transistors P 1 and P 2 , and the control signals SIG INN1 and SIG INN2 should turn off the N-type transistors N 1 and N 2 so that the inverter 600 can output the high voltage close to the first voltage V 1 .
  • the control signals SIG INN1 and SIG INN2 are both at the low voltage, such as 0V, for turning off the N-type transistors N 1 and N 2 , then the gate-to-drain voltage of the N-type transistor N 1 would be close to the voltage difference between the first voltage V 1 and the second voltage V 2 , such as 6V. If the voltage difference between the first voltage V 1 and the second voltage V 2 is rather large, the N-type transistor N 1 may generate significant leakage current or even break down.
  • the control signal SIG INN1 can be set to 3V, which is half of the voltage difference between the first voltage V 1 and the second voltage V 2
  • the control signal SIG INN2 can be set to 0V
  • the control signals SIG INP1 and SIG INP2 can both be set to 3V. That is, when the control signals SIG INN1 and SIG INN2 received by the control terminals of the N-type transistors N 1 and N 2 are at different voltages, the control signals SIG INP1 and SIG INP2 received by the control terminals of the P-type transistors P 1 and P 2 are at the same voltage.
  • the P-type transistors P 1 and P 2 have to be turned off.
  • the similar principle mentioned in the previous case may be applied, that is, the control signals SIG INN1 and SIG INN2 can both be at 3V while the control signals SIG INP1 and SIG INP2 can be at 3V and 6V respectively.
  • control signals SIG INP1 and SIG INP2 received by the control terminals of the P-type transistors P 1 and P 2 are at different voltages
  • the control signals SIG INN1 and SIG INN2 received by the control terminals of the N-type transistors N 1 and N 2 are at the same voltage so the possibility of the P-type transistors P 1 and P 2 being damaged by large gate-to-source voltages and gate-to-drain voltages can be reduced.
  • the N-type transistor N 1 and the P-type transistor P 1 can substantially controlled by the same control signal, that is, the control signals SIG INN1 and SIG INP1 can be substantially the same control signal.
  • the inverters 100 to 600 all include two N-type transistors N 1 and N 2 and two P-type transistors P 1 and P 2 , however, in other embodiments, the inverter may include more transistors according to the system requirement.
  • FIG. 7 shows an inverter 700 according to one embodiment of the present invention.
  • the inverter 700 includes K N-type transistors N 1 to N K , K P-type transistors P 1 to P K , K voltage drop impedance elements 730 1 to 730 K coupled in parallel with the K N-type transistors N 1 to N K respectively, and K voltage drop impedance elements 740 1 to 740 K coupled in parallel with the K P-type transistors P 1 to P K respectively, where K is an integer greater than 2. Since the inverter 700 includes more transistors than the inverters 100 to 600 , the inverter 700 can be used to output higher voltages.
  • the cross voltages applied on the N-type transistors N 1 to N K can be balanced when the inverter 700 outputs the high voltage
  • the cross voltages applied on the P-type transistors P 1 to P K can be balanced when the inverter 700 outputs the low voltage. Therefore, the system instability caused by unbalanced cross voltages on the transistors can be mitigated.
  • the K N-type transistors N 1 to N K and the K P-type transistors P 1 to P K can all receive the same control signal SIG IN , however, in other embodiments, the K N-type transistors N 1 to N K and the K P-type transistors P 1 to P K may also receive different control signals while the N-type transistors N 1 to N K can be operated synchronously, and the P-type transistors P 1 to P K can be operated synchronously. Also, when the P-type transistors P 1 to P K are turned on, the N-type transistors N 1 to N K are turned off, and when the plurality of P-type transistors P 1 to P K are turned off, the N-type transistors N 1 to N K are turned on. Therefore, the possibility of the transistors being damaged by large gate-to-source voltages and gate-to-drain voltages can be reduced.
  • FIG. 8 shows an inverter 700 ′ according to one embodiment of the present invention.
  • the inverters 700 ′ and 700 have similar structures, and in FIG. 8 , K is 3. That is, the inverter 700 ′ includes 3 N-type transistors N 1 to N 3 and 3 P-type transistors P 1 to P 3 .
  • the N-type transistors N 1 to N 3 may receive the control signals SIG INN1 to SIG INN3 respectively
  • the P-type transistors P 1 to P 3 may receive the control signals SIG INP1 to SIG INP3 respectively.
  • the inverter may include K P-type transistors and K N-type transistors, and the user may decide the number K according to the first voltage V 1 and the second voltage V 2 , and then decide the voltages of the control signals according to the number K so the control signals SIG INN1 to SIG INNK can be, for example, arranged to be close to the equal-distribution.
  • the user may decide K to be 3 first as shown in FIG. 8 .
  • control signals SIG INP1 , SIG INP2 , and SIG INP3 can all be set to 6V while the control signal SIG INN1 can be set to 6V, the control signal SIG INN2 can be set to 3V, and the control signal SIG INN3 can be set to 0V.
  • control signals SIG INN1 , SIG INN2 , and SIG INN3 received by the control terminals of the N-type transistors N 1 , N 2 , and N 3 are at different voltages
  • the control signals SIG INP1 , SIG INP2 , and SIG INP3 received by the control terminals of the P-type transistors P 1 , P 2 , and P 3 are at the same voltage. Consequently, while turning off the N-type transistors N 1 , N 2 , and N 3 effectively, the possibility of the N-type transistors N 1 , N 2 , and N 3 being damaged by large gate-to-source voltages and gate-to-drain voltages can be reduced.
  • the P-type transistors P 1 . P 2 , and P 3 have to be turned off.
  • the control signals SIG INN1 , SIG INN2 , and SIG INN3 can all be set to 3V while the control signal SIG INP1 can be set to 3V, the control signal SIG INP2 can be set to 6V, and the control signal SIG INP3 can be set to 9V.
  • the control signals SIG INP1 , SIG INP2 , and SIG INP3 received by the control terminals of the P-type transistors P 1 .
  • the control signals SIG INN1 , SIG INN2 , and SIG INN3 received by the control terminals of the N-type transistors N 1 , N 2 , and N 3 are at the same voltage. Consequently, while turning off the P-type transistors P 1 . P 2 , and P 3 effectively, the possibility of the P-type transistors P 1 , P 2 , and P 3 being damaged by large gate-to-source voltages and gate-to-drain voltages can be reduced.
  • control signals SIG INP1 to SIG INPK can be, for example, arranged to be close to the equal-distribution.
  • the N-type transistors N 1 , N 2 , and N 3 can receive different control signals, the N-type transistors N 1 , N 2 , and N 3 can still be operated synchronously, that is, can be turned on and turned off simultaneously. Also, although the P-type transistors P 1 , P 2 , and P 3 can receive different control signals, the P-type transistors P 1 , P 2 , and P 3 can still be operated synchronously.
  • the N-type transistors N 1 , N 2 , and N 3 are turned off when the P-type transistors P 1 , P 2 , and P 3 are turned on, and the P-type transistors P 1 , P 2 , and P 3 are turned off when the N-type transistors N 1 , N 2 , and N 3 are turned on. Therefore, the N-type transistors N 1 , N 2 , and N 3 and the P-type transistors P 1 , P 2 , and P 3 can be operated normally while the possibility of the transistors being damaged by large gate-to-source voltages and gate-to-drain voltages can be reduced.
  • FIG. 9 shows an inverter 800 according to one embodiment of the present invention.
  • the inverter 800 includes a first system voltage terminal 110 , a second system voltage terminal 120 , an output terminal OUT, K P-type transistors P′ 1 to P′ K , and K N-type transistors N′ 1 to N′ K , where K is an integer greater than 1.
  • K is an integer greater than 1.
  • the user can choose the number K according to the first voltage V 1 and the second voltage V 2 properly.
  • the N-type transistor N′ 1 is closer to the output terminal OUT while the N-type transistor N′ 2 is closer to the second system voltage terminal 120 , the gate-to-source voltages of these two transistors may be different. Therefore, when turned off, the impedances of the N-type transistors N′ 1 and N′ 2 may be quite different, causing the cross voltages applied on the N-type transistors N′ 1 and N′ 2 to be unbalanced. Since the N-type transistor N′ 1 may have to endure a larger cross voltage, the N-type transistor N′ 1 can be chosen to have a channel width-to-length ratio greater than the channel width-to-length ratio of the N-type transistor N′ 2 .
  • the impedance of the N-type transistor N′ 1 would be smaller than the impedance of the N-type transistor N′ 2 , so the cross voltage applied on the N-type transistor N′ 1 can be reduced. That is, by selecting the N-type transistors N′ 1 and N′ 2 to have proper channel width-to-length ratios, the cross voltages applied to the N-type transistors N′ 1 and N′ 2 can be balanced.
  • the user can also choose the N-type transistor N′ 2 to have a channel width-to-length ratio greater than the N-type transistor N′ 3 , and so on, and finally choose the N-type transistor N′ (K-1) to have a channel width-to-length ratio greater than the N-type transistor N′ K . Consequently, when the N-type transistors N′ 1 to N′ K are turned off, the cross voltages applied on the N-type transistors N′ 1 to N′ K would have similar values, mitigating the system instability caused by unbalanced cross voltages applied on the N-type transistors N′ 1 to N′ K .
  • the inverter 800 can also select the P-type transistors P′ 1 to P′ K to have proper channel width-to-length ratios, so that the channel width-to-length ratio of the P-type transistor P′ 1 would be greater than the P-type transistor P′ 2 , the channel width-to-length ratio of the P-type transistor P′ 2 would be greater than the P-type transistor P′ 3 , and so on, and finally, the channel width-to-length ratio of the P-type transistor P′ (K-1) would be greater than the P-type transistor P′ K .
  • the control terminals of the P-type transistors P′ 1 to P′ K and the control terminals of the N-type transistors N′ 1 to N′ K can be coupled together for receiving the same control signal SIG IN , so the P-type transistors P′ 1 to P′ K can be operated synchronously and the N-type transistors N′ 1 to N′ K can be operated synchronously. Also, the N-type transistors N′ 1 to N′ K are turned off when the P-type transistors P′ 1 to P′ K are turned on, and the P-type transistors P′ 1 to P′ K are turned off when the N-type transistors N′ 1 to N′ K are turned on.
  • control terminals of the P-type transistors P′ 1 to P′ K may receive different control signals and the control terminals of the N-type transistors N′ 1 to N′ K may receive different control signals as shown in FIG. 8 .
  • the P-type transistors P′ 1 to P′ K can still be operated synchronously and the N-type transistors N′ 1 to N′ K can still be operated synchronously.
  • the N-type transistors N′ 1 to N′ K are turned off when the P-type transistors P′ 1 to P′ K are turned on, and the P-type transistors P′ 1 to P′ K are turned off when the N-type transistors N′ 1 to N′ K are turned on.
  • the inverter 800 can also further combine with the voltage drop impedance elements.
  • the N-type transistors N 1 to N K and N′ 1 to N′ K , the P-type transistors P 1 to P K and P′ 1 to P′ K , and the voltage drop impedance elements 130 1 , 130 2 , 230 1 , 230 2 , 330 1 , 330 2 , 430 1 , 430 2 , 540 1 , 540 2 , 630 1 , 630 2 , 640 1 , 640 2 , 730 1 to 730 K , and 740 1 to 740 K can all be manufactured by a Complementary Metal-Oxide-Semiconductor (CMOS) manufacturing process. That is, the whole inverter 100 to 800 can be manufactured with the same process. Also, to further reduce the leakage currents, the silicon on insulator (SOI) manufacturing process may be adopted. In addition, the inverter manufactured by the silicon on insulator manufacturing process may have better high-frequency performance.
  • CMOS Complementary Metal-Oxide-Semiconduct
  • the inverters provided by the embodiments of the present invention can adjust and balance the cross voltages applied on the transistors with voltage drop impedance elements or the channel width-to-length ratios of the transistors. Therefore, the system instability caused by unbalanced cross voltages on the transistors can be mitigated.

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