US10385456B2 - Resin container coating device - Google Patents

Resin container coating device Download PDF

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US10385456B2
US10385456B2 US14/441,290 US201314441290A US10385456B2 US 10385456 B2 US10385456 B2 US 10385456B2 US 201314441290 A US201314441290 A US 201314441290A US 10385456 B2 US10385456 B2 US 10385456B2
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chambers
chamber
electric power
gas
high frequency
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US14/441,290
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US20150292089A1 (en
Inventor
Kiyonori Shimada
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Nissei ASB Machine Co Ltd
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Nissei ASB Machine Co Ltd
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Assigned to NISSEI ASB MACHINE CO., LTD. reassignment NISSEI ASB MACHINE CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SHIMADA, KIYONORI
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32394—Treating interior parts of workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow

Definitions

  • the present invention relates to a resin container coating device capable of disposing a plurality of resin containers in a chamber and performing collective film formation.
  • Resins such as polyethylene which are widely used in household goods and the like, generally have a property of transmitting a low-molecular gas such as oxygen or carbon dioxide and also a property of sorbing a low-molecular organic compound inside thereof. Therefore, when the resin is used as a container, it is known that there are various restrictions on its use target and use form as compared with other containers such as glass. For example, in a case of using a resin container by filling carbonated drinking water therein, since the carbonic acid permeates through the container to the outside, it may be difficult in some cases to maintain the quality as the carbonated drinking water for a long period of time.
  • a resin container coating device of the present invention includes a plurality of chambers serving as a plurality of outer electrodes which are mutually electrically independent and storing a plurality of resin containers respectively in independent states, a plurality of internal electrodes which are electrically grounded and formed in a tubular shape, in which gas conductive parts for conducting a source gas are formed to inner peripheral parts thereof, and which are respectively inserted inside the plurality of resin containers stored in the chambers, a gas supply unit for supplying the source gas to the plurality of chambers, a high frequency power source for supplying a high frequency electric power to the plurality of chambers, and an electric power switching part capable of switching a supply designation of the high frequency electric power, which is supplied from the high frequency power source, from a part of the plurality of chambers to another chamber.
  • the resin container coating device of the present invention includes a gas switching part capable of switching a supply destination of the source gas, which is supplied from the gas supply unit, from a part of the plurality of chambers to another chamber.
  • a film forming process by the generation of plasma can be sequentially carried out to the plurality of chambers. Namely, initially, the high frequency electric power is supplied to a part of the plurality of chambers to carry out the film forming process to the resin containers stored in the part of the chambers. Then, the supply destination of the high frequency electric power is switched by the electric power switching part, and the film forming process can be carried out to the resin containers stored in the remaining chambers. In such a way, the film forming process is sequentially carried out respectively for predetermined units of the plurality of chambers. Thus, the high frequency electric power required for the film forming process at one time is suppressed and the high frequency power source does not need to be enlarged.
  • FIG. 1 is a front sectional view which explains a first embodiment of a resin container coating device according to the present invention.
  • FIG. 2 is a side sectional view of the resin container coating device shown in FIG. 1 .
  • FIG. 3 is an enlarged sectional view of main parts of a chamber shown in FIG. 1 .
  • FIG. 4 is a schematic diagram showing an electric connection structure and a piping structure of the first embodiment.
  • FIG. 5 is a flowchart which explains a coating procedure of the first embodiment.
  • FIG. 6 is a schematic diagram which explains an electric connection structure and a piping structure of a second embodiment.
  • FIG. 7 is a schematic diagram which explains an electric connection structure and a piping structure of a third embodiment.
  • the resin container coating device (hereinafter, also referred to as a “coating device”) is a device in which resin containers are respectively stored in a plurality of chambers to produce films configured by gas of a silicon compound, etc., on their inner surfaces by using a plasma CVD technique.
  • Bottles for drinking water such as carbonic acid beverage or fruit juice
  • containers for toilet goods or chemicals may be exemplified as the resin containers.
  • the present invention is not limited thereto and resin containers may be adopted which are used for other uses.
  • the coating device 10 of the present embodiment includes, as shown in FIG. 1 to FIG. 3 , a base part 20 as a base, a flat plate shaped insulating plate 30 arranged on the base part 20 , first, second, third and fourth chambers 40 A, 40 B, 40 C and 40 D which are arranged on the insulating plate 30 and respectively have four first, second, third and fourth storage rooms S 1 , S 2 , S 3 and S 4 to store a plurality of (four in the present embodiment) substantially cylindrical resin containers B respectively in individually independent states, pipe shaped (tubular) internal electrodes 50 respectively inserted and arranged in the plurality of resin containers B respectively installed in the storage rooms S 1 , S 2 , S 3 and S 4 , an exhaust unit 60 which communicates respectively with the storage rooms S 1 , S 2 , S 3 and S 4 of the chambers 40 A, 40 B, 40 C and 40 D to exhaust air and a gas supply unit 70 (see FIG. 4 ) which supplies source gas to the resin containers B installed in the storage rooms S 1
  • the base part 20 is formed with a metal block such as stainless steel and includes a rectangular bottom plate part 21 and a peripheral wall part 25 which extends upward from a peripheral edge of the bottom plate part 21 .
  • An inner space S 5 is defined by the bottom plate part 21 , the peripheral wall part 25 and the insulating plate 30 .
  • four screw holes 22 are provided substantially at equal intervals in a linearly parallel state.
  • four gas passage paths 23 are provided in the bottom plate part 21 of the base part 20 .
  • the gas passage paths 23 are respectively connected to the gas supply unit 70 at an upstream end and respectively connected to the screw holes 22 at a downstream end.
  • the base part 20 is electrically grounded (see FIG. 4 ).
  • the first, second, third and fourth chambers 40 A, 40 B, 40 C and 40 D respectively include first, second, third and fourth chamber bodies 41 A, 41 B, 41 C and 41 D and first, second, third and fourth chamber lids 45 A, 45 B, 45 C and 45 D respectively detachably attached to upper parts of the chamber bodies 41 A, 41 B, 41 C and 41 D to seal the chamber bodies 41 A, 41 B, 41 C and 41 D.
  • These chambers 40 A, 40 B, 40 C and 40 D also respectively function as outer electrodes of a plasma CVD and are electrically connected to a high frequency power source 80 (see FIG. 4 ) through a matching box 81 and an electric power switching part 85 , which will be described later.
  • the chamber bodies 41 A, 41 B, 41 C and 41 D are respectively formed with rectangular metal blocks and respectively have circular through holes 42 A, 42 B, 42 C and 42 D formed so as to have inside diameters a little larger than an outer shape of the resin containers B.
  • These through holes 42 A, 42 B, 42 C and 42 D are provided in a linearly parallel state and respectively communicate with the inner space S 5 of the base part 20 .
  • one flat plate shaped container holding plate 43 is arranged in lower parts of the through holes 42 A, 42 B, 42 C and 42 D.
  • the container holding plates 43 four opening parts 43 A are formed which have diameters slightly smaller than those of openings of the resin containers B at positions respectively corresponding to the though holes 42 A, 42 B, 42 C and 42 D. Since the resin containers B respectively stored in the storage rooms S 1 , S 2 , S 3 and S 4 are held by peripheral parts of the opening parts 43 A of the container holding plates 43 , the accommodated resin containers B do not slip off from the through holes 42 A, 42 B, 42 C and 42 D.
  • a plurality of air exhaust openings 44 are provided in the container holding plates 43 .
  • air in inner parts and outer parts of the resin containers B respectively stored in the storage rooms S 1 , S 2 , S 3 and S 4 can be evacuated at the same time.
  • bottomed holes 46 A, 46 B, 46 C and 46 D which mutually have the same diameters are respectively formed at positions corresponding to the through holes 42 A, 42 B, 42 C and 42 D of the chamber bodies 41 A, 41 B, 41 C and 41 D under a state that the chamber lids 45 A, 45 B, 45 C and 45 D are respectively aligned with the chamber bodies 41 A, 41 B, 41 C and 41 D.
  • the storage rooms S 1 , S 2 , S 3 and S 4 which store the resin containers B are formed and arranged in a linearly parallel state by the through holes 42 A, 42 B, 42 C and 42 D of the chamber bodies 41 A, 41 B, 41 C and 41 D and the bottomed holes 46 A, 46 B, 46 C and 46 D of the chamber lids 45 A, 45 B, 45 C and 45 D.
  • the internal electrode 50 is a hollow and tubular pipe member such as a metallic cylinder or a rectangular tube and has a gas conductive part 51 which guides the source gas in an inner peripheral part thereof.
  • the internal electrodes 50 are respectively introduced to the storage rooms S 1 , S 2 , S 3 and S 4 via the opening parts 43 A of the container holding plates 43 .
  • Lower parts of the internal electrodes 50 are screwed and connected to the screw holes 22 of the base part 20 through metallic piping members 52 .
  • the internal electrodes 50 are respectively inserted into the storage rooms S 1 , S 2 , S 3 and S 4 of the chambers 40 A, 40 B, 40 C and 40 D and arranged so as to be located at central parts of the storage rooms S 1 , S 2 , S 3 and S 4 .
  • the internal electrodes 50 are electrically grounded as a result of their screwing and connection. Further, at the same time, since the screw holes 22 communicate with the gas passage paths 23 in the base part 20 , the gas conductive parts 51 of the internal electrodes 50 are consequently connected to the gas passage paths 23 of the base part 20 and the gas supply unit 70 (see FIG. 4 ).
  • an on-off valve 72 and a mass flow controller 71 are arranged as shown in FIG. 2 and FIG. 4 .
  • the on-off valve 72 is arranged in the gas passage path side of the base part 20 and the mass flow controller 71 is arranged in the gas supply unit 70 side.
  • the exhaust unit 60 since the exhaust unit 60 communicates with the inner space S 5 of the base part 20 , the exhaust unit 60 resultantly communicates with the storage rooms S 1 , S 2 , S 3 and S 4 of the chambers 40 A, 40 B, 40 C and 40 D. Further, the exhaust unit 60 is connected to a vacuum pump 61 in a downstream side. By the vacuum pump 61 , air of the storage rooms S 1 , S 2 , S 3 and S 4 of the chambers 40 A, 40 B, 40 C and 40 D is exhausted through the inner space S 5 (see FIG. 4 ).
  • an on-off valve 62 is arranged between the vacuum pump 61 and the inner space S 5 .
  • the first and second chambers 40 A and 40 B form a first unit U 1 so as to form an electrically integral parallel circuit unit as shown in FIG. 4 .
  • the third and fourth chambers 40 C and 40 D form a second unit U 2 so as to electrically form an electrically integral parallel circuit unit.
  • the first and second units U 1 and U 2 themselves are electrically connected in parallel with the high frequency power source 80 .
  • the electric power switching part 85 is arranged.
  • the electric power switching part 85 is electrically connected to the high frequency power source 80 through the matching box 81 .
  • the electric power switching part 85 includes first and second switch circuits 86 A and 86 B.
  • the first switch circuit 86 A is electrically connected to the first unit U 1 .
  • the second switch circuit 86 B is electrically connected to the second unit U 2 .
  • the first and second switch circuits 86 A and 86 B carry out alternately opening and closing operations of an electric power in accordance with an instruction of the electric power switching part 85 .
  • the electric power switching part 85 has a function that alternately switches a supply destination of the high frequency electric power, which is supplied from the high frequency power source 80 , between the first and second units U 1 and U 2 .
  • the matching box 81 serves to realize an impedance matching between the high frequency power source 80 and the first and second units U 1 and U 2 .
  • the matching box is formed with a matching circuit having a combination of electric elements such as a coil and a capacitor.
  • the quality of the film formed in the resin container B depends on a plurality of factors such as an output of high frequency of the high frequency power source 80 , a pressure of the source gas in the resin container B, a flow rate of the source gas, a time of generation of plasma or the like.
  • the above-described electric power switching part 85 is provided to concentrate the electric power supplied from the high frequency power source 80 to a part of the chambers 40 A, 40 B, 40 C and 40 D, more specifically, for each of units of the first or second unit U 1 or U 2 .
  • the plurality of resin containers B are inserted into the through holes 42 A, 42 B, 42 C and 42 D of the chamber bodies 41 A, 41 B, 41 C and 41 D from upper parts and are respectively stored.
  • the through holes 42 A, 42 B, 42 C and 42 D have inside diameters a little larger than diameters of the maximum cylinder diameter of the resin containers B, the resin containers B are held at predetermined positions in the through holes 42 A, 42 B, 42 C and 42 D (step S 1 ).
  • the internal electrodes 50 are respectively inserted into the resin containers B from openings of the resin containers B.
  • the chamber lids 45 A, 45 B, 45 C and 45 D of the chambers 40 A, 40 B, 40 C and 40 D are closed to respectively seal the storage rooms S 1 , S 2 , S 3 and S 4 of the chambers 40 A, 40 B, 40 C and 40 D (step S 2 ).
  • the air in the chambers 40 A, 40 B, 40 C and 40 D is exhausted by the vacuum pump 61 of the exhaust unit 60 so that the storage rooms S 1 , S 2 , S 3 and S 4 of the chambers 40 A, 40 B, 40 C and 40 D are brought to states similar to a vacuum (hereinafter, also referred to as a vacuum state).
  • a vacuum state also referred to as a vacuum state.
  • the mass flow controller 71 and the on-off valve 72 operate so that the source gas is continuously supplied by the gas supply unit 70 .
  • the supplied source gas passes the gas conductive parts 51 of the internal electrodes 50 to discharge the source gas from ends of the internal electrodes 50 .
  • the source gas is supplied to the resin containers (step S 3 ).
  • the exhaust unit 60 exhausts the source gas with which the storage rooms S 1 , S 2 , S 3 and S 4 are sequentially filled and which leaks out from the storage rooms one after another.
  • the electric power switching part 85 When the electric power switching part 85 initially electrically opens the second switch circuit 86 B, and, on the other hand, closes the first switch circuit 86 A after the source gas is supplied, the electric power from the high frequency power source 80 is supplied only to the first unit U 1 .
  • the electric power from the high frequency power source 80 is supplied only to the first unit U 1 .
  • plasma is generated between the first chamber 40 A and the second chamber 40 B serving as the outer electrodes and the internal electrodes 50 respectively introduced into the storage rooms S 1 and S 2 thereof.
  • the internal electrodes 50 are electrically grounded.
  • the first and second chambers 40 A and 40 B are electrically insulated by the insulating plate 30 , a potential difference arises between the first and second chambers 40 A and 40 B and the internal electrodes 50 .
  • the films are formed in inner surfaces thereof (step S 4 ).
  • the electric power switching part 85 subsequently carries out a switch switching operation to open the first switch circuit 86 A, and, on the other hand, close the second switch circuit 86 B. Accordingly, the electric power from the high frequency power source 80 is supplied only to the second unit U 2 . Thus, plasma is generated in the third and fourth chambers 40 C and 40 D to form films in inner surfaces in the two resin containers B stored in these chambers 40 C and 40 D (step S 5 ).
  • the plasma is sequentially generated for each of the predetermined units (for each of the first and second units U 1 and U 2 in the present embodiment), and finally, the films are formed in the inner surfaces of all the resin containers B (four in the present embodiment) (step S 6 ).
  • the electric power switching part 85 which can switch the supply destination of the high frequency electric power supplied from the high frequency power source 80 to the third and fourth chambers 40 C and 40 D forming the second unit U 2 from the first and second chambers 40 A and 40 B forming the first unit U 1 , is provided, the film forming process by the generation of plasma can be sequentially carried out to the plurality of resin containers B.
  • the high frequency electric power is supplied to a part of the plurality of chambers 40 A, 40 B, 40 C and 40 D, that is, the first and second chambers 40 A and 40 B of the first unit U 1 to carry out the film forming process to the resin containers B stored in the part of the chambers.
  • the supply destination of the high frequency electric power is switched by the electric power switching part 85 , so that the film forming process can be carried out to the resin containers B stored in the remaining chambers, namely, the chambers 40 C and 40 D of the second unit U 2 .
  • the film forming process is sequentially carried out for each of the predetermined units of the plurality of chambers 40 A, 40 B, 40 C and 40 D, the high frequency electric power required for the film forming process at one time can be suppressed and the high frequency power source 80 does not need to be enlarged.
  • the resin container coating device 10 of the present embodiment since common pretreatments such as a process of evacuating the plurality of chambers 40 A, 40 B, 40 C and 40 D or a process of supplying the source gas to the plurality of chambers 40 A, 40 B, 40 C and 40 D can be carried out together to the plurality of chambers 40 A, 40 B, 40 C and 40 D at the same time, production efficiency can be improved.
  • the high frequency electric power (for instance, the high frequency electric power slightly higher than that of ordinary film forming conditions) can be supplied only to the chambers of the one unit of the plurality of chambers 40 A, 40 B, 40 C and 40 D, for instance, when a uniform film is hardly formed due to the sizes or forms of the resin containers B, conditions can be variously changed to inspect an optimum manufacturing condition.
  • the present invention can be also employed for an experimental use to set conditions.
  • FIG. 6 a second embodiment of a resin container coating device according to the present invention will be described below. An explanation of the same as or equivalent to those of the above-described first embodiment will be omitted or simplified by attaching the same or equivalent reference numerals to the drawings.
  • the present embodiment is different from the first embodiment, and a matching box is not provided between a high frequency power source 80 and an electric power switching part 85 .
  • Each of two matching boxes 91 A and 91 B is arranged between first and second units U 1 and U 2 and the electric power switching part 85 .
  • the resin container coating device 90 since the two matching boxes 91 A and 91 B are respectively arranged in one to each unit between the first and second units U 1 and U 2 and the electric power switching part 85 , an impedance matching which respectively meets the units U 1 and U 2 can be more accurately carried out. Thus, unevenness in quality of a film of resin containers B can be more suppressed. Further, even when a difference in impedance is large between the first and second units U 1 and U 2 due to any cause, since the impedance matching is individually carried out in the present embodiment, if an adjustment of the matching boxes 91 A and 91 B is set once, the adjustment does not need to be newly carried out afterward. Accordingly, an efficiency of an operation can be improved. Other configurations and operational effects are the same as those of the above-described first embodiment.
  • FIG. 7 a third embodiment of a resin container coating device according to the present invention will be described below.
  • a gas branch part 101 is provided at a downstream side of an on-off valve 72 viewed from a gas supply unit 70 .
  • first and second gas supply passages P 1 and P 2 are formed so as to be independent of each other.
  • the first gas supply passage P 1 is a passage which supplies source gas to the first and second chambers 40 A and 40 B forming a first unit U 1 .
  • the second gas supply passage P 2 is a passage which supplies the source gas to the third and fourth chambers 40 C and 40 D forming a second unit U 2 .
  • on-off valves 106 A and 106 B are respectively arranged in intermediate parts of the passages.
  • the on-off valves 106 A and 106 B are respectively arranged between gas passage paths 23 of a base part 20 and the gas branch part 101 to carry out operations of supplying the source gas or stopping the supply of the source gas correspondingly to a switch switching operation of an electric power switching part 85 .
  • the first and second unit U 1 and U 2 sides to which the electric power switching part 85 supplies an electric power one of the first or second on-off valve 106 A or 106 B which corresponds thereto opens the gas supply passage P 1 or P 2 thereof at a predetermined timing to supply the source gas.
  • the gas switching part 105 is further provided which can alternately switch a supply destination of the source gas supplied from the gas supply unit 70 to the chambers 40 C and 40 D forming the second unit U 2 from the first and second chambers 40 A and 40 B forming the first unit U 1 among the plurality of chambers 40 A, 40 B, 40 C and 40 D.
  • the gas branch part 101 is provided to form the first and second gas supply passages P 1 and P 2 which respectively supply the source gas to the first and second units U 1 and U 2 .
  • the on-off valves 106 A and 106 are respectively provided. Accordingly, when films are formed on inner surfaces of the resin containers B, the source gas can be supplied merely to a necessary unit (U 1 , U 2 ). Thus, the wastefulness of the source gas to be used can be reduced and a production cost can be reduced.
  • the present invention is not limited to the above-described embodiments and may be suitably modified and improved.
  • the configuration of the second embodiment (the configuration that the matching boxes are respectively provided for each unit) and the configuration of the third embodiment (the configuration that the gas supply passages and the on-off valves are respectively provided for each unit) may be combined together to form a device.
  • the number of the chambers or the units is not limited to the embodiments and may be suitably set.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Details Of Rigid Or Semi-Rigid Containers (AREA)
US14/441,290 2012-11-08 2013-11-07 Resin container coating device Expired - Fee Related US10385456B2 (en)

Applications Claiming Priority (3)

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JP2012246499A JP6093552B2 (ja) 2012-11-08 2012-11-08 樹脂容器用コーティング装置
JP2012-246499 2012-11-08
PCT/JP2013/080124 WO2014073609A1 (ja) 2012-11-08 2013-11-07 樹脂容器用コーティング装置

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US10385456B2 true US10385456B2 (en) 2019-08-20

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US (1) US10385456B2 (de)
EP (1) EP2918703B1 (de)
JP (1) JP6093552B2 (de)
CN (1) CN104769157B (de)
WO (1) WO2014073609A1 (de)

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Citations (12)

* Cited by examiner, † Cited by third party
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JP6093552B2 (ja) 2017-03-08
EP2918703A1 (de) 2015-09-16
WO2014073609A1 (ja) 2014-05-15
US20150292089A1 (en) 2015-10-15
EP2918703B1 (de) 2018-10-24
JP2014095116A (ja) 2014-05-22

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