US10361070B2 - Method of processing target object - Google Patents

Method of processing target object Download PDF

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US10361070B2
US10361070B2 US15/876,358 US201815876358A US10361070B2 US 10361070 B2 US10361070 B2 US 10361070B2 US 201815876358 A US201815876358 A US 201815876358A US 10361070 B2 US10361070 B2 US 10361070B2
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electrostatic chuck
temperature
etching
chamber
target object
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US20180211822A1 (en
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Taku GOHIRA
Jin KUDO
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

Definitions

  • the embodiments described herein pertain generally to a method of processing a target object.
  • an etching target film of a target object is etched by plasma etching.
  • the target object is placed on an electrostatic chuck of a stage provided within a chamber main body of a plasma processing apparatus. Then, a processing gas is supplied into a chamber, and plasma is generated as the processing gas is excited.
  • the etching target film to be etched in the plasma etching may be, for example, a silicon oxide film, a silicon nitride film, or a multilayered film composed of these films.
  • a processing gas containing either or both of a fluorocarbon gas and a hydrofluorocarbon gas is used.
  • described in Patent Document 1 is a technique of etching a silicon oxide film by plasma of a processing gas containing a fluorocarbon gas.
  • Patent Document 1 Japanese Patent Laid-open Publication No. H10-116822
  • the plasma etching of the etching target film such as the silicon oxide film, the silicon nitride film or the multilayered film of these films
  • the plasma etching may be performed in a state that the electrostatic chuck and the target object are set to a low temperature. If the plasma etching using the processing gas containing either or both of the fluorocarbon gas and the hydrofluorocarbon gas is performed, a plasma product containing carbon or containing carbon and fluorine is generated. This plasma product is condensed or coagulated at a low-temperature place, forming a deposit thereon.
  • an unnecessary deposit is formed on the target object during a time period from a time point when the plasma etching is completed until a time point when the target object is carried out of the chamber.
  • a method of processing a target object by using a plasma processing apparatus includes a chamber main body, a stage and a temperature control device.
  • An internal space of the chamber main body is configured as a chamber.
  • the stage is provided within the chamber.
  • the stage has an electrostatic chuck.
  • the electrostatic chuck is configured to hold the target object placed thereon.
  • the temperature control device is configured to adjust a temperature of the electrostatic chuck.
  • the method includes (i) etching an etching target film of the target object placed on the electrostatic chuck by generating plasma of a processing gas containing a fluorocarbon gas and/or a hydrofluorocarbon gas within the chamber (hereinafter, referred to as “etching process”), the etching of the etching target film including a main etching of etching the etching target film in a state that the temperature of the electrostatic chuck is set to be equal to or lower than ⁇ 30° C. by the temperature control device; (ii) raising, immediately after the etching process is performed or immediately after the main etching is performed, the temperature of the electrostatic chuck to be equal to or higher than 0° C.
  • etching process a processing gas containing a fluorocarbon gas and/or a hydrofluorocarbon gas within the chamber
  • temperature raising process a state that the target object is placed on the electrostatic chuck
  • carrying-out process carrying-out the target object placed on the electrostatic chuck from the chamber in a state that the temperature of the electrostatic chuck is set to be equal to or higher than 0° C. as a result of performing the temperature raising process (hereinafter, referred to as “carrying-out process”).
  • a plasma product containing carbon or a plasma product containing carbon and fluorine is generated.
  • This plasma product adheres to an inner wall surface of the chamber main body and forms a deposit when the etching is being performed.
  • this plasma product is immediately condensed or solidified at a low-temperature place whose temperature is equal to or lower than ⁇ 30° C., so that a thick deposit is formed.
  • a gas generated from the deposit adhering to the inner wall surface of the chamber main body may be condensed or solidified on the target object, so that a thick deposit is formed thereon.
  • the temperature of the electrostatic chuck and, ultimately, the temperature of the target object are raised to be equal to or higher than 0° C. immediately after the etching process is performed or immediately after the main etching is performed. Accordingly, the deposit on the target object is removed or the amount thereof is reduced by the time when the etching is ended and the target object is carried out of the chamber.
  • the etching process may include an overetching of etching the etching target film additionally after the main etching is performed.
  • the temperature of the electrostatic chuck may be set to be higher than ⁇ 30° C. and lower than 0° C. when the overetching is being performed. If the temperature of the target object when the overetching is being performed is higher than the temperature of the target object when the main etching is being performed, an etching rate of the etching target film by the overetching is reduced. Accordingly, controllability over an etching amount of the etching target film can be improved. Further, damage on an underlying layer of the etching target film is suppressed.
  • the temperature raising process may be performed when the overetching is being performed.
  • an additional time period only for raising the temperature of the electrostatic chuck is not necessary. Accordingly, a time period from an end of the etching process to a start of the carrying-out process is reduced.
  • the method may further include neutralizing the electrostatic chuck after the etching process is performed and before the carrying-out process is performed.
  • the temperature raising process may be performed when the neutralizing of the electrostatic chuck is being performed. According to this exemplary embodiment, the temperature raising process is performed in parallel with the neutralizing of the electrostatic chuck which is performed in a period between the etching process and the carrying-out process. Accordingly, the time period from the end of the etching process to the start of the carrying-out process can be shortened.
  • the stage includes a lower electrode in which a path is formed.
  • the electrostatic chuck is provided on the lower electrode.
  • the temperature control device includes a first temperature adjuster configured to supply a first heat exchange medium; and a second temperature adjuster configured to supply a second heat exchange medium having a temperature higher than a temperature of the first heat exchange medium.
  • the first heat exchange medium is supplied into the path of the lower electrode from the first temperature adjuster when the main etching is being performed.
  • the second heat exchange medium is supplied into the path of the lower electrode from the second temperature adjuster when the temperature raising process is being performed. According to the present exemplary embodiment, when starting the temperature raising process, it is possible to switch the heat exchange medium supplied into the path of the lower electrode to the heat exchange medium of the high temperature at a high speed.
  • the stage includes a heater provided in the electrostatic chuck and a cooling table in which a path is formed.
  • the electrostatic chuck is provided on the cooling table.
  • a sealed space is provided between the electrostatic chuck and the cooling table.
  • the temperature control device includes the heater of the electrostatic chuck; a chiller unit configured to supply a coolant into the path; and a pipeline system configured to connect one of the chiller unit, a gas exhaust device and a source of a heat transfer gas to the sealed space selectively.
  • the coolant is supplied into the path of the cooling table from the chiller unit and the coolant is supplied into the sealed space from the chiller unit when the main etching is being performed.
  • the electrostatic chuck is heated by the heater and the sealed space is decompressed by the gas exhaust device when the temperature raising process is being performed.
  • heat resistance in the sealed space between the electrostatic chuck and the cooling table is increased when the temperature raising process is being performed, heat transfer between the cooling table and the electrostatic chuck is suppressed.
  • the electrostatic chuck is heated by the heater when the temperature raising process is being performed. Accordingly, a time period for raising the temperature of the electrostatic chuck and, ultimately, the temperature of the target object is shortened.
  • the deposit on the target object is already removed or the amount thereof is already reduced.
  • FIG. 1 is a flowchart for describing a method of processing a target object according to an exemplary embodiment
  • FIG. 2 is a cross sectional view illustrating a part of an example of the target object
  • FIG. 3 is a diagram schematically illustrating a plasma processing apparatus that can be used in the method of FIG. 1 ;
  • FIG. 4 is a diagram illustrating an example of a temperature control device
  • FIG. 5 is a timing chart regarding the method shown in FIG. 1 ;
  • FIG. 6 is a timing chart regarding the method shown in FIG. 1 ;
  • FIG. 7 is a diagram showing a state in which a deposit is formed
  • FIG. 8 is a graph showing a relationship between a length of a time during which a silicon wafer is left on an electrostatic chuck and a thickness of a deposit formed on the silicon wafer;
  • FIG. 9 is a graph showing a relationship between a temperature of the electrostatic chuck and a thickness of a deposit
  • FIG. 10 is a diagram showing a state after a process ST 5 is performed.
  • FIG. 11 is a diagram showing a state after a process ST 7 is performed.
  • FIG. 12 is a diagram schematically illustrating another example of a plasma processing apparatus that can be used in performing the method of FIG. 1 ;
  • FIG. 13 is an enlarged cross sectional view illustrating a part of a stage of the plasma processing apparatus shown in FIG. 12 ;
  • FIG. 14 is an enlarged cross sectional view illustrating another part of the stage of the plasma processing apparatus shown in FIG. 12 ;
  • FIG. 15 is a diagram illustrating a configuration of an example of a pipeline system.
  • FIG. 1 is a flowchart for describing a method of processing a target object according to an exemplary embodiment.
  • a method MT shown in FIG. 1 includes etching an etching target film of the target object in a plasma processing apparatus.
  • FIG. 2 is a cross sectional view illustrating a part of an example of the target object. The method MT is applicable to the target object W shown in FIG. 2 .
  • the target object W includes an underlying layer UL, an etching target film EF and a mask MK.
  • the underlying layer UL is a base layer of the etching target film EF and is made of, by way of non-limiting example, silicon or tungsten.
  • the etching target film EF is provided on the underlying layer UL.
  • the etching target film EF may be a silicon oxide film, a silicon nitride film or a multilayered film composed of one or more silicon oxide films and one or more silicon nitride films stacked on top of each other alternately.
  • the mask MK is provided on the etching target film EF.
  • the mask MK is made of, but not limited to, a metal such as tungsten, polycrystalline silicon, or an organic material such as amorphous carbon.
  • the mask MK has an opening.
  • a portion of the etching target film EF exposed through the opening of the mask MK is etched.
  • the mask MK may be provided with multiple openings on the etching target film EF.
  • FIG. 3 is a diagram schematically illustrating a plasma processing apparatus that can be used in performing the method of FIG. 1 .
  • a plasma processing apparatus 10 shown in FIG. 3 is configured as a capacitively coupled plasma processing apparatus.
  • the plasma processing apparatus 10 includes a chamber main body 12 .
  • the chamber main body 12 has a substantially cylindrical shape, and an internal space of the chamber main body 12 is configured as a chamber 12 c .
  • the chamber main body 12 is made of a metal such as, but not limited to, aluminum.
  • a film having plasma resistance, for example, an yttrium oxide film is formed on an inner wall surface of the chamber main body 12 .
  • the chamber main body 12 is grounded.
  • a supporting member 14 is provided on a bottom portion of the chamber main body 12 .
  • the supporting member 14 is made of an insulating material.
  • the supporting member 14 has a substantially cylindrical shape.
  • the supporting member 14 is upwardly extended from the bottom portion of the chamber main body 12 .
  • the supporting member 14 is configured to support a stage 16 on an upper portion thereof.
  • the stage 16 includes a lower electrode 18 and an electrostatic chuck 20 .
  • the lower electrode 18 includes a first member 18 a and a second member 18 b .
  • the first member 18 a and the second member 18 b are made of a conductor such as, but not limited to, aluminum, and each has a substantially disk shape.
  • the second member 18 b is provided on the first member 18 a and electrically connected with the first member 18 a .
  • the electrostatic chuck 20 is provided on the lower electrode 18 .
  • the electrostatic chuck 20 is configured to hold the target object W placed thereon.
  • the electrostatic chuck 20 has a substantially disk-shaped insulating layer and a film-shaped electrode embedded in the insulating layer.
  • the electrode of the electrostatic chuck 20 is electrically connected to a DC power supply 22 via a switch 23 .
  • the electrostatic chuck 20 attracts and holds the target object W by an electrostatic force generated by a DC voltage applied from the DC power supply 22 .
  • a heater may be provided within this electrostatic chuck 20 .
  • a focus ring FR is provided on a peripheral portion of the lower electrode 18 to surround an edge of the target object W and an edge of the electrostatic chuck 20 .
  • the focus ring FR is provided to improve uniformity of etching.
  • the focus ring FR is made of a material which is appropriately selected depending on a material of the target of the etching.
  • a path 18 f for a coolant is formed in the second member 18 b of the lower electrode 18 .
  • a heat exchange medium is supplied into the path 18 f from a temperature control device 24 provided outside the chamber main body 12 via a pipeline 25 a .
  • the heat exchange medium supplied into the path 18 f is returned back into the temperature control device 24 through a pipeline 25 b . That is, the heat exchange medium is circulated between the temperature control device 24 and the path 18 f .
  • the heat exchange medium whose temperature is adjusted is circulated between the temperature control device 24 and the path 18 f , a temperature of the electrostatic chuck 20 and, ultimately, a temperature of the target object W is adjusted.
  • FIG. 4 is a diagram illustrating an example of the temperature control device.
  • the example temperature control device 24 includes a first temperature adjuster 24 a and a second temperature adjuster 24 b .
  • the first temperature adjuster 24 a is configured to adjust a temperature of a first heat exchange medium (e.g., brine) and output the first heat exchange medium.
  • the second temperature adjuster 24 b is configured to adjust a temperature of a second heat exchange medium (e.g., brine) and output the second heat exchange medium.
  • the temperature of the second heat exchange medium is higher than the temperature of the first heat exchange medium.
  • the first temperature adjuster 24 a sets therein the temperature of the first heat exchange medium to, e.g., ⁇ 70° C.
  • the second temperature adjuster 24 b sets therein the temperature of the second heat exchange medium to be in a range from 0° C. to 100° C.
  • the temperature control device 24 includes a valve 24 c , a valve 24 d , a valve 24 e and a valve 24 f .
  • An output port of the first temperature adjuster 24 a is connected to the pipeline 25 a via the valve 24 c .
  • the output port of the first temperature adjuster 24 a is a port for outputting the first heat exchange medium.
  • a return port of the first temperature adjuster 24 a is connected to the pipeline 25 b via the valve 24 d .
  • the return port of the first temperature adjuster 24 a is a port for receiving the heat exchange medium returned to the first temperature adjuster 24 a from the path 18 f through the pipeline 25 b .
  • An output port of the second temperature adjuster 24 b is connected to the pipeline 25 a via the valve 24 e .
  • the output port of the second temperature adjuster 24 b is a port for outputting the second heat exchange medium.
  • a return port of the second temperature adjuster 24 b is connected to the pipeline 25 b via the valve 24 f .
  • the return port of the second temperature adjuster 24 b is a port for receiving the heat exchange medium returned to the second temperature adjuster 24 b from the path 18 f through the pipeline 25 b.
  • valve 24 c and the valve 24 d When circulating the heat exchange medium between the first temperature adjuster 24 a and the path 18 f , the valve 24 c and the valve 24 d are opened, and the valve 24 e and the valve 24 f are closed. Meanwhile, when circulating the heat exchange medium between the second temperature adjuster 24 b and the path 181 , the valve 24 c and the valve 24 d are closed, and the valve 24 e and the valve 24 f are opened.
  • each of the above-described first temperature adjuster 24 a and second temperature adjuster 24 b is of a type configured to adjust the temperature of the heat exchange medium flowing therein
  • each of the first temperature adjuster 24 a and the second temperature adjuster 24 b may be implemented by a direct expansion type temperature adjuster.
  • each of the first and second temperature adjuster 24 a and 24 b is the direct expansion type temperature adjuster, each has a compressor, a condenser and an expansion valve, and the stage 16 serves as an evaporator.
  • the plasma processing apparatus 10 is equipped with a gas supply line 28 .
  • a heat transfer gas for example, a He gas
  • a heat transfer gas supply device is equipped with a heat transfer gas supply device into a gap between a top surface of the electrostatic chuck 20 and a rear surface of the target object W.
  • the plasma processing apparatus 10 is further equipped with an upper electrode 30 .
  • the upper electrode 30 is placed above the stage 16 , facing the stage 16 .
  • the upper electrode 30 is supported at an upper portion of the chamber main body 12 with an insulating member 32 therebetween.
  • the upper electrode 30 may include a ceiling plate 34 and a supporting body 36 .
  • the ceiling plate 34 directly faces the chamber 12 c , and is provided with a multiple number of gas discharge holes 34 a .
  • This ceiling plate 34 may be made of a conductor or a semiconductor having low resistance with low Joule heat.
  • the supporting body 36 is configured to support the ceiling plate 34 in a detachable manner, and is made of a conductor such as, but not limited to, aluminum.
  • a gas diffusion space 36 a is formed within the supporting body 36 .
  • Multiple holes 36 b are extended downwards from the gas diffusion space 36 a to communicate with the gas discharge holes 34 a , respectively.
  • the supporting body 36 is provided with a port 36 c through which a gas is introduced into the gas diffusion space 36 a , and a pipeline 38 is connected to this port 36 c.
  • the pipeline 38 is connected to a gas source group 40 via a valve group 42 and a flow rate controller group 44 .
  • the gas source group 40 includes a plurality of gas sources for supplying a processing gas into the chamber 12 c .
  • the processing gas contains a fluorocarbon gas and/or a hydrofluorocarbon gas.
  • the gas source group 40 includes a source of a fluorocarbon gas, a source of a hydrofluorocarbon gas and a source of an oxygen-containing gas.
  • the fluorocarbon gas may be, for example, a C 4 F 8 gas.
  • the hydrofluorocarbon gas may be, by way of non-limiting example, a CH 2 F 2 gas.
  • the oxygen-containing gas may be, but not limited to, an oxygen gas (O 2 gas).
  • the gas source group 40 may additionally include a source of a hydrogen gas (H 2 gas), a source of an one or more halogen-containing gas and a source of a hydrocarbon gas.
  • the gas source group 40 may include a source of a NF 3 gas as the source of the one or more halogen-containing gas.
  • the gas source group 40 may include a source of a CH 4 gas as the source of the hydrocarbon gas.
  • the valve group 42 includes a plurality of valves
  • the flow rate controller group 44 includes a plurality of flow rate controllers.
  • Each of the flow rate controllers may be implemented by a mass flow controller or a pressure control type flow rate controller.
  • Each of the gas sources belonging to the gas source group 40 is connected to the pipeline 38 via a corresponding flow rate controller belonging to the flow rate controller group 44 and a corresponding valve belonging to the valve group 42 .
  • a gas exhaust path having annular shape when viewed from the top, is formed between the stage 16 and a sidewall of the chamber main body 12 .
  • a baffle plate 48 is provided at a portion of this gas exhaust path in a vertical direction.
  • the baffle plate 48 may be made of, by way of example, an aluminum member coated with ceramics such as Y 2 O 3 .
  • the chamber main body 12 is also provided with a gas exhaust opening 12 e under the baffle plate 48 .
  • the gas exhaust opening 12 e is connected with a gas exhaust device 50 via a gas exhaust line 52 .
  • the gas exhaust device 50 includes a pressure controller and a vacuum pump such as a turbo molecular pump.
  • the gas exhaust device 50 is configured to decompress the chamber 12 c to a preset pressure.
  • an opening 12 p for carry-in and carry-out of the target object W is provided at the sidewall of the chamber main body 12 , and the opening 12 p is opened/closed by a gate valve GV.
  • the plasma processing apparatus 10 further includes a first high frequency power supply 62 and a second high frequency power supply 64 .
  • the first high frequency power supply 62 is configured to generate a first high frequency power for plasma generation.
  • a frequency of the first high frequency power is in a range from 27 MHz to 100 MHz, for example, 100 MHz.
  • the first high frequency power supply 62 is connected to the lower electrode 18 via a matching device 66 .
  • the matching device 66 is equipped with a circuit configured to match an output impedance of the first high frequency power supply 62 and an input impedance at a load side (lower electrode 18 side).
  • the first high frequency power supply 62 may be connected to the upper electrode 30 via the matching device 66 .
  • the second high frequency power supply 64 is configured to generate a second high frequency power for ion attraction into the target object W.
  • a frequency of the second high frequency power ranges from 400 kHz to 13.56 MHz, for example, 3 MHz.
  • the second high frequency power supply 64 is connected to the lower electrode 18 via a matching device 68 .
  • the matching device 68 is equipped with a circuit configured to match an output impedance of the second high frequency power supply 64 and the input impedance at the load side (lower electrode 18 side).
  • the plasma processing apparatus 10 may further include a control unit CU.
  • the control unit CU is implemented by a computer including a processor, a storage unit, an input device, a display device and the like.
  • the control unit CU is configured to control individual components of the plasma processing apparatus 10 .
  • an operator can input commands through the input device to manage the plasma processing apparatus 10 .
  • an operational status of the plasma processing apparatus 10 can be visually displayed on the display device.
  • the storage unit of the control unit CU stores therein recipe data and control programs for controlling various processings performed in the plasma processing apparatus 10 by the processor.
  • the storage unit of the control unit CU stores therein control programs for implementing the method MT in the plasma processing apparatus 10 and recipe data.
  • FIG. 1 the method MT will be explained for an example case where the method MT is performed on the target object W shown in FIG. 2 by using the plasma processing apparatus 10 .
  • two parallel double lines indicate that two or more of a plurality of processes drawn between the two parallel double lines are performed in parallel.
  • FIG. 5 and FIG. 6 are timing charts regarding the method MT.
  • the method MT is begun from a process ST 1 .
  • a temperature of the electrostatic chuck 20 is set to a temperature equal to or less than ⁇ 30° C. for main etching to be described later.
  • the coolant is circulated between the first temperature adjuster 24 a and the path 18 f.
  • the target object W is carried into the chamber 12 c .
  • the target object W is placed on and held by the electrostatic chuck 20 .
  • the process ST 1 may be performed after the process ST 2 .
  • a process ST 3 is performed.
  • the etching target film EF of the target object W is etched.
  • plasma of the processing gas containing a fluorocarbon gas and/or a hydrofluorocarbon gas is generated in the chamber 12 c .
  • the processing gas may additionally contain a hydrogen gas (H 2 gas), an one or more halogen-containing gas and a hydrocarbon gas.
  • the processing gas is supplied into the chamber 12 c from the gas source group 40 .
  • the processing gas may contain a CH 2 F 2 gas, a C 4 F 8 gas, a H 2 gas, a CH 4 gas and a NF 3 gas.
  • an internal pressure of the chamber 12 c is set to a preset pressure by the gas exhaust device 50 .
  • the first high frequency power is output from the first high frequency power supply 62 for plasma generation.
  • the plasma of the processing gas is generated within the chamber 12 c .
  • the second high frequency power may be supplied to the lower electrode 18 from the second high frequency power supply 64 .
  • the etching target film EF is etched by ions and/or radicals in the plasma.
  • the process ST 3 includes a main etching ST 31 and an overetching ST 32 .
  • the etching target film EF is etched by the ions and/or radicals in the plasma of the aforementioned processing gas in a state (see FIG. 5 ) that the temperature of the electrostatic chuck 20 is set to the temperature equal to or less than ⁇ 30° C. by the temperature control device 24 .
  • the etching target film EF is etched by the ions and/or radicals in the plasma of the aforementioned processing gas in the state that the temperature of the electrostatic chuck 20 , i.e., the temperature of the target object W is set to the temperature equal or less than ⁇ 30° C., an etching rate of the etching target film EF is increased.
  • the overetching ST 32 is performed after the main etching ST 31 .
  • the etching target film EF may not be etched uniformly under the multiple openings of the mask MK by the etching in the main etching ST 31 . That is, when the etching target film EF is etched by the main etching ST 31 until the underlying layer UL under a part of the openings of the mask MK is exposed, the etching target film EF may be slightly left on the underlying layer UL under another part of the openings of the mask MK.
  • the overetching ST 32 is performed to etch the etching target film EF left under this another part of the openings of the mask MK so that the etching target film EF is etched uniformly under all the openings of the mask MK.
  • the etching target film EF is etched by the ions and/or the radicals in the plasma of the aforementioned processing gas.
  • the overetching ST 32 is performed in a state that the temperature of the electrostatic chuck 20 , that is, the temperature of the target object W is set to a temperature higher than ⁇ 30° C. and lower than 0° C. by the temperature control device 24 .
  • the temperature of the target object W in the overetching ST 32 is higher than the temperature of the target object W in the main etching ST 31 , the etching rate of the etching target film EF by the overetching ST 32 is reduced. Accordingly, controllability over an etching amount of the etching target film EF can be improved. Further, damage on the underlying layer UL is suppressed.
  • the temperature of the electrostatic chuck 20 when the overetching ST 32 is being performed may not be limited to the aforementioned temperature higher than ⁇ 30° C. and lower than 0° C.
  • a process ST 4 is performed.
  • neutralization of the electrostatic chuck 20 is performed.
  • a voltage having an opposite polarity to a voltage applied to the electrode of the electrostatic chuck 20 when the electrostatic chuck 20 is holding the target object W is applied to the electrode of the electrostatic chuck 20 .
  • FIG. 7 is a diagram illustrating a state in which a deposit is formed. If the plasma of the aforementioned processing gas is generated, a plasma product containing carbon or a plasma product containing carbon and fluorine is generated. This plasma product adheres to an inner wall surface of the chamber main body 12 and forms the deposit when the etching of the process ST 3 is being performed. Especially, this plasma product is immediately condensed or solidified at a low-temperature place, so that a thick deposit is formed. Thus, if the temperatures of the electrostatic chuck 20 and the target object W are maintained to be equal to or lower than ⁇ 30° C.
  • a gas generated from the deposit adhering to the inner wall surface of the chamber main body 12 may be condensed or solidified on the target object W, so that a thick deposit is formed thereon. Resultantly, as depicted in FIG. 7 , a deposit DP is formed on the inner wall surface of the chamber main body 12 , a surface of the stage 16 and a surface of the target object W.
  • a first experiment and a second experiment conducted to investigate formation of a deposit will be explained.
  • a silicon wafer is carried into the chamber 12 c and placed on the electrostatic chuck 20 .
  • This silicon wafer is left on the electrostatic chuck 20 .
  • the temperature of the electrostatic chuck 20 is maintained at the same temperature as the temperature of the electrostatic chuck 20 when the main etching ST 31 is being performed.
  • a thickness of a deposit formed on the silicon wafer is measured.
  • a time period during which the silicon wafer is left on the electrostatic chuck 20 is varied.
  • a pressure of the chamber 12 c is set to 25 mTorr (3.333 Pa); a frequency and a power of the first high frequency power, 40 MHz and 1 kW, respectively; and a frequency and a power of the second high frequency power, 3 MHz and 5 kW, respectively, and a mixed gas of a H 2 gas, a CH 2 F 2 gas, a CH 4 gas, a C 4 F 8 gas and a NF 3 gas is used as the processing gas.
  • the temperature of the electrostatic chuck 20 is set to be ⁇ 60° C., and a processing time is set to be 600 sec.
  • the thickness of the deposit on the silicon wafer does not depend on the time length of the main etching ST 31 in case that the corresponding main etching ST 31 is performed for a long time enough for the deposit to adhere to components within the chamber and the entire inner wall surface of the chamber main body.
  • a graph of FIG. 8 shows a relationship between the time period during which the silicon wafer is left on the electrostatic chuck 20 and the thickness of the deposit formed on the silicon wafer obtained by the first experiment.
  • a horizontal axis represents the time period during which the silicon wafer is left on the electrostatic chuck 20
  • a vertical axis indicates the thickness of the deposit.
  • the thick deposit is rapidly formed on the target object on the electrostatic chuck 20 if the temperature of the electrostatic chuck 20 is maintained at the low temperature after the above-described etching with the plasma of the processing gas is performed in the state that the temperature of the electrostatic chuck 20 is set to the low temperature.
  • a silicon wafer is carried into the chamber 12 c and placed on the electrostatic chuck 20 .
  • the silicon wafer is left on the electrostatic chuck 20 for 300 seconds.
  • a thickness of a deposit formed on the silicon wafer is measured.
  • the temperature of the electrostatic chuck 20 after the main etching ST 31 is performed is set to various temperatures.
  • a relationship between the temperature of the electrostatic chuck 20 after the main etching ST 31 is performed and the thickness of the deposit is obtained.
  • Processing conditions for the main etching ST 31 in the second experiment are the same as the processing conditions for the main etching ST 31 in the first experiment.
  • a graph of FIG. 9 shows a relationship between the temperature of the electrostatic chuck and the thickness of the deposit obtained by the second experiment.
  • a horizontal axis represents the temperature of the electrostatic chuck 20 after the main etching ST 31 is performed, and a vertical axis indicates the thickness of the deposit.
  • the temperature of the electrostatic chuck 20 is maintained at the low temperature after the main etching ST 31 is performed, the thick deposit is formed on the silicon wafer. Meanwhile, it is found out that if the temperature of the electrostatic chuck 20 is set to a temperature equal to or higher than 0° C. after the main etching ST 31 is performed, the deposit on the silicon wafer is removed almost completely.
  • the temperature of the electrostatic chuck 20 that is, the temperature of the target object W needs to be set to the temperature equal to or higher than 0° C. during a time period from a time point when the above-described etching with the plasma of the processing gas is completed to a time point when the target object W is carried out of the chamber 12 c . Further, after the etching of the process ST 3 or the main etching ST 31 is completed, the temperature of the electrostatic chuck 20 and the target object W needs to be raised immediately.
  • a process ST 5 is performed to reduce the amount of the deposit on the target object W.
  • the temperature of the electrostatic chuck 20 is raised to the temperature equal to or higher than 0° C. Accordingly, the temperature of the target object W is also raised to the temperature equal to or higher than 0° C.
  • the second heat exchange medium is circulated between the second temperature adjuster 24 b and the path 18 f.
  • the process ST 5 is performed immediately after the process ST 3 .
  • the process ST 5 is performed during the neutralization of the electrostatic chuck 20 in the process ST 4 .
  • the temperatures of the electrostatic chuck 20 and the target object W are raised immediately after the process ST 3 is performed.
  • the process ST 5 is performed immediately after the main etching ST 31 .
  • the process ST 5 may be performed in parallel with the overetching ST 32 .
  • the temperatures of the electrostatic chuck 20 and the target object W are raised immediately after the main etching ST 31 is performed.
  • FIG. 10 is a diagram showing a state after the process ST 5 is completed. If the process ST 5 is performed and the temperatures of the electrostatic chuck 20 and the target object W reach the temperature equal to or higher than 0° C., the deposit DP on the target object W is removed or the amount thereof is reduced, as depicted in FIG. 10 .
  • a process ST 6 is subsequently performed.
  • the target object W is carried out of the chamber 12 c .
  • the temperature of the electrostatic chuck 20 is maintained at the temperature equal to or higher than 0° C., as shown in FIG. 5 .
  • the process ST 7 is performed.
  • cleaning is performed.
  • the process ST 7 includes, as shown in FIG. 5 , a process ST 71 , a process ST 72 , a process ST 73 , a process ST 74 and a process ST 75 .
  • a dummy wafer is carried into the chamber 12 c for the cleaning and is held by the electrostatic chuck 20 .
  • the cleaning gas includes an oxygen-containing gas.
  • the oxygen-containing gas may be, by way of non-limiting example, an oxygen gas (O 2 gas), a carbon monoxide gas or a carbon dioxide gas.
  • the cleaning gas is supplied into the chamber 12 c from the gas source group 40 .
  • the first high frequency power is supplied from the first high frequency power supply 62 for plasma generation.
  • the neutralization of the electrostatic chuck 20 is performed. This neutralization of the electrostatic chuck 20 is the same process as the process ST 4 .
  • the process ST 74 the dummy wafer is carried out of the chamber 12 c.
  • FIG. 11 is a diagram illustrating a state after the process ST 7 is completed. As depicted in FIG. 11 , by performing the process ST 7 , the deposit DP is removed from the inner wall surface of the chamber main body 12 and the surface of the stage 16 .
  • the temperature of the electrostatic chuck 20 when the process ST 7 is being performed may be set to a certain temperature.
  • the temperature of the electrostatic chuck 20 is maintained at the temperature equal to or higher than 0° C. during a time period from a start time point of the process ST 71 to a certain time point within a processing time of the process ST 75 . Then, from that certain time point within the processing time of the process ST 75 , the temperature of the electrostatic chuck 20 is reduced.
  • the temperature of the electrostatic chuck 20 is maintained at the temperature equal to or higher than 0° C. Then, the temperature of the electrostatic chuck 20 is reduced from a start time point of the process ST 72 .
  • a process ST 8 is then performed.
  • a process ST 9 is performed while the above-described process ST 3 is being performed.
  • the stop condition is satisfied when any abnormality occurs while the process ST 3 is being performed. If it is determined that the stop condition is satisfied, a process ST 10 is performed.
  • neutralization of the electrostatic chuck 20 is performed.
  • the process ST 10 is the same process as the process ST 4 .
  • a process ST 11 is conducted.
  • the temperature of the electrostatic chuck 20 is raised.
  • the second heat exchange medium is circulated between the second temperature adjuster 24 b and the path 18 f .
  • process ST 11 may be performed in parallel with the process ST 10 . Reference may be made to the temperature of the electrostatic chuck in FIG. 6 when the process ST 10 is being performed.
  • the target object W is carried out of the chamber 12 c . Then, the method MT is ended.
  • the deposit DP on the target object W is removed or the amount thereof is reduced by the time when the target object W is carried out of the chamber.
  • the process ST 5 is performed when the process ST 4 is performed, as described above. That is, the process ST 5 is performed in parallel with the neutralization of the electrostatic chuck 20 which is performed in a time period between the process ST 3 and the process ST 6 . Accordingly, an additional time period only for raising the temperature of the electrostatic chuck 20 is not necessary. Therefore, a time period from the end of the etching of the process ST 3 to the carry-out of the target object W in the process ST 6 can be shortened.
  • the process ST 5 is performed when the overetching ST 32 is performed, as stated above. That is, the raising of the temperature of the electrostatic chuck 20 in the process ST 5 is performed in parallel with the overetching ST 32 . Accordingly, an additional time period only for raising the temperature of the electrostatic chuck 20 is not necessary. Therefore, the time period from the end of the etching of the process ST 3 to the carry-out of the target object W in the process ST 6 can be shortened.
  • the temperature control device 24 when starting the performing of the process ST 5 , it is possible to switch the heat exchange medium supplied into the path 181 at a high speed from the first heat exchange medium of the low temperature to the second heat exchange medium of the high temperature.
  • FIG. 12 is a diagram schematically illustrating the plasma processing apparatus according to another exemplary embodiment that can be used in performing the method shown in FIG. 1 .
  • a plasma processing apparatus 100 shown in FIG. 12 is configured as a capacitively coupled plasma processing apparatus.
  • the plasma processing apparatus 100 includes a chamber main body 112 and a stage 116 .
  • the chamber main body 112 has a substantially cylindrical shape, and an internal space of the chamber main body 112 is configured as a chamber 112 c .
  • the chamber main body 112 is made of, by way of example, aluminum.
  • the chamber main body 112 is grounded. Further, an opening 112 p through which a target object W is carried into/out of the chamber 112 c is provided at a side wall of the chamber main body 112 . This opening 112 p is configured to be opened/closed by a gate valve GV.
  • the stage 116 is configured to support the target object W within the chamber 112 c .
  • the stage 116 has a function of attracting the target object W and adjusting a temperature of the target object W, and has a structure in which a high frequency power is sent to a base of an electrostatic chuck. Details of this stage 116 will be discussed later.
  • the plasma processing apparatus 100 is further equipped with an upper electrode 130 .
  • the upper electrode 130 is placed within a top opening of the chamber main body 112 and is arranged to be substantially parallel to a lower electrode of the stage 116 .
  • An insulating supporting member 132 is provided between the upper electrode 130 and the chamber main body 112 .
  • the upper electrode 130 includes a ceiling plate 134 and a supporting body 136 .
  • the ceiling plate 134 has a substantially disk shape.
  • the ceiling plate 134 may have conductivity.
  • the ceiling plate 134 is made of, by way of non-limiting example, silicon.
  • the ceiling plate 134 is made of aluminum, and a ceramic film having plasma resistance is formed on a surface of the ceiling plate 134 .
  • the ceiling plate 134 is provided with a multiple number of gas discharge holes 134 a . These gas discharge holes 134 a are extended in a substantially vertical direction.
  • the supporting body 136 is configured to support the ceiling plate 134 in a detachable manner, and is made of, by way of non-limiting example, aluminum.
  • a gas diffusion space 136 a is formed within the supporting body 136 .
  • Multiple holes 136 b are extended from the gas diffusion space 136 a to communicate with the gas discharge holes 134 a , respectively.
  • a pipeline 138 is connected to the gas diffusion space 136 a via a port 136 c .
  • a gas source group 40 is connected to this pipeline 138 via a valve group 42 and a flow rate controller group 44 in the same way as in the plasma processing apparatus 10 .
  • the plasma processing apparatus 100 is further equipped with a gas exhaust device 150 .
  • the gas exhaust device 150 includes one or more vacuum pumps such as turbo molecular pumps and a pressure controller. This gas exhaust device 150 is connected to a gas exhaust port formed at the chamber main body 112 .
  • the plasma processing apparatus 100 further includes a control unit MCU.
  • the control unit MCU has the same configuration as the control unit CU of the plasma processing apparatus 10 .
  • Recipe data and a control program for controlling various processings performed in the plasma processing apparatus 100 by the processor are stored in a storage unit of the control unit MCU.
  • recipe data and control programs for implementing the method MT in the plasma processing apparatus 100 are stored in the storage unit of the control unit MCU.
  • FIG. 13 is an enlarged sectional view illustrating a part of the stage of the plasma processing apparatus shown in FIG. 12
  • FIG. 14 is an enlarged sectional view illustrating another part of the stage of the plasma processing apparatus illustrated in FIG. 12 .
  • the stage 116 includes a cooling table 117 and an electrostatic chuck 120 .
  • the cooling table 117 is supported by a supporting member 114 upwardly extended from a bottom portion of the chamber main body 112 .
  • This supporting member 114 is implemented by an insulating member and is made of, by way of non-limiting example, aluminum oxide (alumina). Further, the supporting member 114 has a substantially cylindrical shape.
  • the cooling table 117 is made of a conductive metal, for example, aluminum.
  • the cooling table 117 has a substantially disk shape.
  • the cooling table 117 has a central portion 117 a and a peripheral portion 117 b .
  • the central portion 117 a has a substantially disk shape.
  • the central portion 117 a provides a first top surface 117 c of the cooling table 117 .
  • the first top surface 117 c is of a substantially circular shape.
  • the peripheral portion 117 b is continuous with the central portion 117 a , and is extended in a circumferential direction (a circumferential direction with respect to a vertically extended axis line Z) at an outside of the central portion 117 a in a diametric direction (a radial direction with respect to the axis line Z).
  • the peripheral portion 117 b provides a bottom surface 117 d of the cooling table 117 along with the central portion 117 a .
  • the peripheral portion 117 b provides a second top surface 117 e .
  • the second top surface 117 e is a band-shaped surface, and is located outside the first top surface 117 c in the diametric direction and extended in the circumferential direction. Further, in the vertical direction, the second top surface 117 e is located closer to the bottom surface 117 d than the first top surface 117 c is.
  • the cooling table 117 is connected with a power feed body 119 .
  • the power feed body 119 is, for example, a power feed rod and is connected to the bottom surface 117 d of the cooling table 117 .
  • the power feed body 119 is made of aluminum or an aluminum alloy.
  • the power feed body 119 is connected to a first high frequency power supply 62 via a matching device 66 . Further, the power feed body 119 is connected with a second high frequency power supply 64 via a matching device 68 .
  • the cooling table 117 is provided with a path 117 f for a coolant.
  • the path 117 f is extended in, for example, a spiral shape within the cooling table 117 .
  • the coolant is supplied into the path 117 f from a chiller unit TU.
  • the chiller unit TU constitutes a part of a temperature control device according to the exemplary embodiment.
  • the coolant supplied into the path 117 f is returned back to the chiller unit TU.
  • the coolant supplied into the path 117 f may be of a type in which heat is absorbed by vaporization thereof to perform cooling.
  • This coolant may be, for example, a hydrofluorocarbon-based coolant.
  • the electrostatic chuck 120 is provided on the cooling table 117 .
  • the electrostatic chuck 120 is provided on the first top surface 117 c of the cooling table 117 .
  • the electrostatic chuck 120 has a base 121 and an attracting member 123 .
  • the base 121 constitutes a lower electrode and is provided on the cooling table 117 .
  • the base 121 has conductivity.
  • the base 121 may be made of ceramic such as aluminum nitride or silicon carbide having conductivity, or made of a metal (e.g., titanium).
  • the base 121 has a substantially disk shape.
  • the base 121 has a central portion 121 a and a peripheral portion 121 b .
  • the central portion 121 a has a substantially disk shape.
  • the central portion 121 a provides a first top surface 121 c of the base 121 .
  • the first top surface 121 c is of a substantially circular shape.
  • the peripheral portion 121 b is continuous with the central portion 121 a and is extended in a circumferential direction at an outside of the central portion 121 a in a diametric direction.
  • the peripheral portion 121 b provides a bottom surface 121 d of the base 121 along with the central portion 121 a .
  • the peripheral portion 121 b provides a second top surface 121 e .
  • the second top surface 121 e is a band-shaped surface and extended in the circumferential direction at an outside of the first top surface 121 c in the diametric direction. Further, in the vertical direction, the second top surface 121 e is located closer to the bottom surface 121 d than the first top surface 121 c is.
  • the attracting member 123 is provided on the base 121 .
  • the attracting member 123 is coupled to the base 121 by metal bonding with a metal provided between the attracting member 123 and the base 121 .
  • the attracting member 123 has a substantially disk shape and is made of ceramic.
  • the ceramic forming the attracting member 123 may be one having a volume resistivity of 1 ⁇ 10 15 ⁇ cm or more in a temperature range from a room temperature (e.g., 20° C.) to 400° C.
  • aluminum oxide (alumina) may be used.
  • the electrostatic chuck 120 includes a plurality of concentric regions RN with respect to the axis line Z, that is, a central axis line of the electrostatic chuck 120 .
  • the electrostatic chuck 120 includes a first region R 1 , a second region R 2 and a third region R 3 .
  • the first region R 1 intersects with the axis line Z
  • the third region R 3 is a region including an edge of the electrostatic chuck 120 .
  • the second region R 2 is located between the first region R 1 and the third region R 3 .
  • the first region R 1 ranges up to a radius of 120 mm from a center of the electrostatic chuck 120 ; the second region R 2 ranges from the radius of 120 mm to a radius of 135 mm of the electrostatic chuck 120 ; and the third region R 3 ranges from the radius of 135 mm to a radius of 150 mm of the electrostatic chuck 120 .
  • the number of the regions of the electrostatic chuck 120 may be equal to or larger than 1.
  • the attracting member 123 of the electrostatic chuck 120 has an attraction electrode 125 embedded therein.
  • the attraction electrode 125 is a film-shaped electrode and is electrically connected with a DC power supply 22 via a switch. If a DC voltage is applied to the attraction electrode 125 from the DC power supply 22 , the attracting member 123 generates an electrostatic force such as a Coulomb force and holds the target object W with this electrostatic force.
  • the attracting member 123 is additionally equipped with a multiple number of heaters HN.
  • These heaters HN constitute a part of the temperature control device according to the exemplary embodiment, and are respectively provided in the multiple regions RN of the electrostatic chuck.
  • the multiple heaters HN include a first heater 156 , a second heater 157 and a third heater 158 .
  • the first heater 156 is provided in the first region R 1 ; the second heater 157 , in the second region R 2 ; and the third heater 158 , in the third region R 3 .
  • the individual heaters HN are connected to a heater power supply 161 .
  • a filter 163 a is provided between the first heater 156 and the heater power supply 161 to suppress the high frequency power from being introduced into the heater power supply 161 .
  • a filter 163 b is provided between the second heater 157 and the heater power supply 161 to suppress the high frequency power from being introduced into the heater power supply 161 .
  • a filter 163 c is provided between the third heater 158 and the heater power supply 161 to suppress the high frequency power from being introduced into the heater power supply 161 .
  • first elastic members EM 1 are provided between the base 121 and the cooling table 117 .
  • the first elastic members EM 1 are configured to allow the electrostatic chuck 120 to be upwardly spaced apart from the cooling table 117 .
  • Each of the first elastic members EM 1 is an O-ring.
  • the individual first elastic members EM 1 have different diameters and are arranged concentrically with respect to the axis line Z. Further, the first elastic members EM 1 are located under boundaries between the adjacent regions of the electrostatic chuck 120 and under the edge of the electrostatic chuck 120 .
  • the first elastic members EM 1 include an elastic member 165 , an elastic member 167 and an elastic member 169 .
  • the elastic member 165 is provided under a boundary between the first region R 1 and the second region R 2 ; the elastic member 167 , under a boundary between the second region R 2 and the third region R 3 ; and the elastic member 169 , under the edge of the electrostatic chuck 120 .
  • the individual first elastic member EM 1 are partially placed in grooves provided on the first top surface 117 c of the cooling table 117 and in contact with the first top surface 117 c and the bottom surface 121 d of the base 121 .
  • These first elastic members EM 1 define, along with the cooling table 117 and the base 121 , a plurality of sealed heat transfer spaces DSN between the first top surface 117 c of the cooling table 117 and the bottom surface 121 d of the base 121 .
  • These heat transfer spaces DSN are respectively extended under the multiple regions RN of the electrostatic chuck 120 and separated from each other.
  • the heat transfer spaces DSN include a first heat transfer space DS 1 , a second heat transfer space DS 2 and a third heat transfer space DS 3 .
  • the first heat transfer space DS 1 is located inside the elastic member 165 ; the second heat transfer space DS 2 , between the elastic member 165 and the elastic member 167 ; and the third heat transfer space DS 3 , between the elastic member 167 and the elastic member 169 .
  • a gas source GS of a heat transfer gas for example, a He gas
  • a chiller unit TU and a gas exhaust device VU are connected to the heat transfer spaces DSN selectively via a pipeline system PS.
  • a length of each heat transfer space DSN in a vertical direction is set to be in a range from, but not limited to, 0.1 mm to 2.0 mm.
  • each of the first elastic members EM 1 has heat resistivity higher than heat resistivity of each of the heat transfer spaces DSN in which the He gas is supplied.
  • the heat resistivity of each heat transfer space DSN depends on a heat conductivity of the heat transfer gas, a length of the corresponding heat transfer space DSN in the vertical direction and an area thereof.
  • the heat resistivity of each first elastic member EM 1 depends on a heat conductivity of the corresponding first elastic member EM 1 , a thickness of the corresponding first elastic member EM 1 in the vertical direction and an area thereof.
  • a material, the thickness and the area of each of the first elastic members EM 1 are determined based on the heat resistivity of the corresponding heat transfer space DSN.
  • the first elastic members EM 1 may be required to have low heat conductivity and high heat resistance.
  • the first elastic members EM 1 may be formed of, by way of non-limiting example, perfluoroelastomer.
  • the stage 116 may be further equipped with a fastening member 171 .
  • the fastening member 171 is made of a metal and is configured to clamp the base 121 and the first elastic members EM 1 between the fastening member 171 and the cooling table 117 .
  • the fastening member 171 is made of a material having low heat conductivity, for example, titanium to suppress heat conduction between the base 121 and the cooling table 117 through the fastening member 171 .
  • the fastening member 171 has a cylindrical portion 171 a and an annular portion 171 b .
  • the cylindrical portion 171 a has a substantially cylindrical shape, and has a first bottom surface 171 c at a bottom end thereof.
  • the first bottom surface 171 c is a band-shaped surface extended in the circumferential direction thereof.
  • the annular portion 171 b has a substantially annular plate shape and is extended from the cylindrical portion 171 a inwardly in the diametric direction to be continuous with an upper inner periphery of the cylindrical portion 171 a .
  • This annular portion 171 b provides a second bottom surface 171 d .
  • the second bottom surface 171 d is a band-shaped surface extended in the circumferential direction thereof.
  • the fastening member 171 is placed such that the first bottom surface 171 c is in contact with the second top surface 117 e of the cooling table 117 and the second bottom surface 171 d is in contact with the second top surface 121 e of the base 121 . Further, the fastening member 171 is fixed to the peripheral portion 117 b of the cooling table 117 by a screw 173 . By adjusting screwing of this screw 173 into the fastening member 171 , a pressed amount of the first elastic members EM 1 is adjusted, so that the length of the heat transfer spaces DSN in the vertical direction is adjusted.
  • a second elastic member 175 is provided between a bottom surface of an inner peripheral portion of the annular portion 171 b of the fastening member 171 and the second top surface 121 e of the base 121 .
  • the second elastic member 175 is implemented by an O-ring and is configured to suppress a particle (e.g., metal powder) that might be generated by a friction between the second bottom surface 171 d of the fastening member 171 and the second top surface 121 e of the base 121 from being moved toward the attracting member 123 .
  • the second elastic member 175 generates a reaction force smaller than a reaction force generated by the first elastic members EM 1 . That is, the first elastic members EM 1 are configured such that the reaction force generated by the first elastic members EM 1 is larger than the reaction force generated by the second elastic member 175 .
  • this second elastic member 175 may be made of a material having high heat resistance and low heat conductivity, for example, perfluoroelastomer.
  • a heater 176 is provided on the fastening member 171 .
  • This heater 176 is extended in the circumferential direction and connected to a heater power supply 161 via a filter 178 .
  • the filter 178 is provided to suppress the high frequency power from being introduced into the heater power supply 161 .
  • the heater 176 is provided between a first film 180 and a second film 182 .
  • the first film 180 is located closer to the fastening member 171 than the second film 182 is.
  • the first film 180 has heat conductivity lower than that of the second film 182 .
  • the first film 180 may be a thermally sprayed zirconia-based film
  • the second film 182 may be a thermally sprayed yttrium oxide (yttria)-based film.
  • the heater 176 may be a thermally sprayed tungsten film.
  • a focus ring FR is provided on the second film 182 .
  • the focus ring FR may be heated by heat from the heater 176 . Further, most of heat flux from the heater 176 flows toward the second film 182 than the first film 180 , and flows toward the focus ring FR through the second film 182 . Accordingly, the focus ring FR is efficiently heated.
  • the one or more insulating members 186 may be made of, by way of example, but not limitation, aluminium oxide or quartz.
  • a gas line 190 through which the heat transfer gas (e.g., He gas) is supplied into a gap between the target object W and the attracting member 123 is provided in the electrostatic chuck 120 and the cooling table 117 of the stage 116 .
  • the gas line 190 is connected to a heat transfer gas supply unit 191 .
  • the gas line 190 includes a gas line 190 a , a gas line 190 b and a gas line 190 c .
  • the gas line 190 a is formed in the attracting member 123 .
  • the gas line 190 c is formed in the cooling table 117 .
  • the gas line 190 a and the gas line 190 c are connected to each other with the gas line 190 b therebetween.
  • the gas line 190 b is implemented by a sleeve 192 .
  • This sleeve 192 is a substantially cylindrical member, and at least a surface thereof has insulation property. This surface of the sleeve 192 is made of ceramic.
  • the sleeve 192 is made of insulating ceramic.
  • the sleeve 192 is made of aluminium oxide (alumina).
  • the sleeve 192 may be implemented by a metal member having a surface on which insulation treatment is performed.
  • the sleeve 192 may have a main body made of aluminium and an alumite film formed on a surface of the main body.
  • an accommodation space for accommodating the sleeve 192 is formed.
  • a film 194 made of insulating ceramic is formed on a surface 121 f of the base 121 which partitions and forms this accommodation space.
  • the film 194 may be, by way of example, but not limitation, a thermally sprayed aluminium oxide (alumina) film.
  • a third elastic member 196 is provided between the film 194 and the cooling table 117 to hermetically seal the accommodation space of the sleeve 192 .
  • the third elastic member 196 is implemented by an O-ring and has insulation property.
  • the third elastic member 196 may be made of, by way of non-limiting example, perfluoroelastomer.
  • a fourth elastic member 198 is provided at an outside of the third elastic member 196 .
  • the fourth elastic member 198 is an O-ring and in contact with the first top surface 117 c of the cooling table 117 and the bottom surface 121 d of the base 121 while sealing the heat transfer space (for example, the first heat transfer space DS 1 ).
  • the fourth elastic member 198 may be made of, by way of example, but not limitation, perfluoroelastomer.
  • the cooling table 117 and the base 121 are spaced apart from each other by the first elastic members EM 1 . Further, in this stage 116 , no adhesive is used to couple the base 121 and the attracting member 123 . Accordingly, the temperature of the electrostatic chuck 120 can be set to be high. Further, since heat transfer between the electrostatic chuck 120 and the cooling table 117 is achieved through the heat transfer gas supplied into the heat transfer spaces DSN, it is also possible to set the temperature of the electrostatic chuck 120 to be low.
  • a power feed route for the high frequency power to the base 121 of the electrostatic chuck 120 is secured by the power feed body 119 , the cooling table 117 and the fastening member 171 .
  • the power feed body 119 is not directly connected to the base 121 of the electrostatic chuck 120 but connected to the cooling table 117 , aluminium or an aluminium alloy can be used as a material for the power feed body 119 . Accordingly, even in case of supplying the high frequency power of the high frequency equal to or higher than 13.56 MHz, a loss of the high frequency power in the power feed body 119 is suppressed.
  • the second elastic member 175 is provided between the bottom surface of the inner peripheral portion of the annular portion 171 b of the fastening member 171 and the second top surface 121 e of the base 121 . Since the second top surface 121 e of the peripheral portion 121 b of the base 121 and the second bottom surface 171 d of the fastening member 171 are in contact with each other, friction is generated at the contact point therebetween, so that the particle (e.g., metal powder) may be generated thereat. Even when this particle is generated, the second elastic member 175 suppresses the particle from adhering to the attracting member 123 and the target object W placed on the corresponding attracting member 123 .
  • the particle e.g., metal powder
  • first elastic members EM 1 are configured such that the reaction force generated by these first elastic members EM 1 is larger than the reaction force generated by the second elastic member 175 . Accordingly, the electrostatic chuck 120 can be securely spaced from the cooling table 117 .
  • each of the first elastic members EM 1 is configured to have the heat resistance higher than the heat resistance of the corresponding heat transfer space DSN when the He gas is supplied in the corresponding heat transfer space DSN.
  • these first elastic members EM 1 are made of, by way of example, perfluoroelastomer. With these first elastic members EM 1 , the heat conduction through the heat transfer spaces DSN is more dominant than heat conduction through the first elastic members EM 1 between the electrostatic chuck 120 and the cooling table 117 . Thus, the temperature distribution of the electrostatic chuck 120 can be uniformed.
  • the gas line 190 for the heat transfer gas supplied into the gap between the target object W and the attracting member 123 is formed without using any adhesive. Further, the surface 121 f of the base 121 , which forms the accommodation space in which the sleeve 192 as a part of the gas line 190 is placed, is covered with the film 194 , and the third elastic member 196 having the insulation property is provided between the film 194 and the cooling table 117 to seal the corresponding accommodation space. With this configuration, introduction of the plasma into the gap between the base 121 and the cooling table 117 and a resultant dielectric breakdown of the base 121 can be suppressed.
  • a plasma processing can be performed on the target object W in a wide temperature range from a low temperature to a high temperature.
  • FIG. 15 is a diagram illustrating an example configuration of the pipeline system.
  • the pipeline system PS shown in FIG. 15 constitutes a part of the temperature control device according to the exemplary embodiment, and has a multiple number of valves.
  • the pipeline system PS is configured to connect the gas source GS, the chiller unit TU and the gas exhaust device VU selectively to each of the heat transfer spaces DSN and configured to switch a connection and a disconnection between the chiller unit TU and the path 117 f .
  • the heat transfer spaces DSN include three heat transfer spaces (the first heat transfer space DS 1 , the second heat transfer space DS 2 , and the third heat transfer space DS 3 ).
  • the number of the heat transfer spaces DSN may not be particularly limited, and may be one or more as long as the number of the heat transfer spaces DSN corresponds to the number of the regions RN of the electrostatic chuck 120 .
  • the pipeline system PS includes a line L 21 , a line L 22 , a valve V 21 and a valve V 22 .
  • One end of the line L 21 is connected to the chiller unit TU, and the other end of the line L 21 is connected to the path 117 f .
  • the valve V 21 is provided at a part of the line L 21 .
  • One end of the line L 22 is connected to the chiller unit TU, and the other end of the line L 22 is connected to the path 117 f .
  • the valve V 22 is provided at a part of the line L 22 . If the valve V 21 and the valve V 22 are opened, the coolant is supplied from the chiller unit TU into the path 1171 through the line L 21 . The coolant supplied into the path 117 f is returned back into the chiller unit TU through the line L 22 .
  • the pipeline system PS further includes a pressure controller 104 a , a line L 11 a , a line L 12 a , a line L 13 a , a line L 14 a , a line L 15 a , a line L 17 a , a line L 31 a , a line L 32 a , a valve V 11 a , a valve V 12 a , a valve V 13 a , a vale V 14 a , a valve V 15 a , a valve V 31 a and a valve V 32 a.
  • the pressure controller 104 a is connected to the gas source GS. One end of the line L 11 a is connected to the pressure controller 104 a .
  • the valve V 11 a is provided at a part of the line L 11 a .
  • One end of the line L 15 a is connected to the first heat transfer space DS 1 , and the other end of the line L 15 a is connected to the gas exhaust device VU.
  • the valve V 15 a is provided at a part of the line L 15 a.
  • One end of the line L 12 a is connected to the other end of the line L 11 a .
  • the other end of the line L 12 a is connected to a part of the line L 15 a on the side of the first heat transfer space DS 1 with respect to the valve V 15 a .
  • the valve V 12 a is provided at a part of the line L 12 a .
  • One end of the line L 13 a and one end of the line L 14 a are also connected to the other end of the line L 11 a .
  • the valve V 13 a is provided at a part of the line L 13 a
  • the valve V 14 a is provided at a part of the line L 14 a .
  • the other end of the line L 13 a and the other end of the line L 14 a are connected to each other.
  • One end of the line L 17 a is connected to a connection point between the other end of the line L 13 a and the other end of the line L 14 a .
  • the other end of the line L 17 a is connected to a part of the line L 15 a closer to the valve V 15 a than the other end of the line L 12 a is close to the valve V 15 a.
  • One end of the line L 31 a is connected to a part of the line L 21 on the side of the chiller unit TU with respect to the valve V 21 .
  • the other end of the line L 31 a is connected to the first heat transfer space DS 1 .
  • the valve V 31 a is provided at a part of the line L 31 a .
  • One end of the line L 32 a is connected to a part of the line L 22 on the side of the chiller unit TU with respect to the valve V 22 .
  • the other end of the line L 32 a is connected to the first heat transfer space DS 1 .
  • the valve V 32 a is provided at a part of the line L 32 a.
  • the pipeline system PS additionally includes a pressure controller 104 b , a line L 11 b , a line L 12 b , a line L 13 b , a line L 14 b , a line L 15 b , a line L 17 b , a line L 31 b , a line L 32 b , a valve V 11 b , a valve V 12 b , a valve V 13 b , a valve V 14 b , a valve V 15 b , a valve V 31 b and a valve V 32 b.
  • the pressure controller 104 b is connected to the gas source GS. One end of the line L 11 b is connected to the pressure controller 104 b .
  • the valve V 11 b is provided at a part of the line L 11 b .
  • One end of the line L 15 b is connected to the second heat transfer space DS 2 , and the other end of the line L 15 b is connected to the gas exhaust device VU. Further, the valve V 15 b is provided at a part of the line L 15 b.
  • One end of the line L 12 b is connected to the other end of the line L 11 b .
  • the other end of the line L 12 b is connected to a part of the line L 15 b on the side of the second heat transfer space DS 2 with respect to the valve V 15 b .
  • the valve V 12 b is provided at a part of the line L 12 b .
  • One end of the line L 13 b and one end of the line L 14 b are also connected to the other end of the line L 11 b .
  • the valve V 13 b is provided at a part of the line L 13 b
  • the valve V 14 b is provided at a part of the line L 14 b .
  • the other end of the line L 13 b and the other end of the line L 14 b are connected to each other.
  • One end of the line L 17 b is connected to a connection point between the other end of the line L 13 b and the other end of the line L 14 b .
  • the other end of the line L 17 b is connected to a part of the line L 15 b closer to the valve V 15 b than the other end of the line L 12 b is close to the valve V 15 b.
  • One end of the line L 31 b is connected to a part of the line L 21 on the side of the chiller unit TU with respect to the valve V 21 .
  • the other end of the line L 31 b is connected to the second heat transfer space DS 2 .
  • the valve V 31 b is provided at a part of the line L 31 b .
  • One end of the line L 32 b is connected to a part of the line L 22 on the side of the chiller unit TU with respect to the valve V 22 .
  • the other end of the line L 32 b is connected to the second heat transfer space DS 2 .
  • the valve V 32 b is provided at a part of the line L 32 b.
  • the pipeline system PS further includes a pressure controller 104 c , a line L 11 c , a line L 12 c , a line L 13 c , a line L 14 c , a line L 15 c , a line L 17 c , a line L 31 c , a line L 32 c , a valve V 11 c , a valve V 12 c , a valve V 13 c , a valve V 14 c , a valve V 15 c , a valve V 31 c and a valve V 32 c.
  • the pressure controller 104 c is connected to the gas source GS. One end of the line L 11 c is connected to the pressure controller 104 c .
  • the valve V 11 c is provided at a part of the line L 11 c .
  • One end of the line L 15 c is connected to the third heat transfer space DS 3 , and the other end of the line L 15 c is connected to the gas exhaust device VU. Further, the valve V 15 c is provided at a part of the line L 15 c.
  • One end of the line L 12 c is connected to the other end of the line L 11 c .
  • the other end of the line L 12 c is connected to a part of the line L 15 c on the side of the third heat transfer space DS 3 with respect to the valve V 15 c .
  • the valve V 12 c is provided at a part of the line L 12 c .
  • One end of the line L 13 c and one end of the line L 14 c are also connected to the other end of the line L 11 c .
  • the valve V 13 c is provided at a part of the line L 13 c
  • the valve V 14 c is provided at a part of the line L 14 c .
  • the other end of the line L 13 c and the other end of the line L 14 c are connected to each other.
  • One end of the line L 17 c is connected to a connection point between the other end of the line L 13 c and the other end of the line L 14 c .
  • the other end of the line L 17 c is connected to a part of the line L 15 c closer to the valve V 15 c than the other end of the line L 12 c is close to the valve V 15 c.
  • One end of the line L 31 c is connected to a part of the line L 21 on the side of the chiller unit TU with respect to the valve V 21 .
  • the other end of the line L 31 c is connected to the third heat transfer space DS 3 .
  • the valve V 31 c is provided at a part of the line L 31 c .
  • One end of the line L 32 c is connected to a part of the line L 22 on the side of the chiller unit TU with respect to the valve V 22 .
  • the other end of the line L 32 c is connected to the third heat transfer space DS 3 .
  • the valve V 32 c is provided at a part of the line L 32 c.
  • valve V 31 a , the valve V 32 a , the valve V 31 b , the valve V 32 b , the valve V 31 c and the valve V 32 c are opened, the coolant is circulated between the chiller unit TU and the heat transfer spaces DSN (DS 1 , DS 2 and DS 3 ).
  • the valve V 11 a , the valve V 12 a , the valve V 13 a , the valve V 14 a , the valve V 15 a , the valve V 11 b , the valve V 12 b , the valve V 13 b , the valve V 14 b , the valve V 15 b , the valve V 11 c , the valve V 12 c , the valve V 13 c , the valve V 14 c and the valve V 15 c are closed.
  • the coolant is not supplied into the heat transfer spaces DSN (DS 1 , DS 2 and DS 3 ) from the chiller unit TU.
  • valve V 11 a , the valve V 12 a , the valve V 11 b , the valve V 12 b , the valve V 11 c and the valve V 12 c are opened while the valve V 13 a , the valve V 14 a , the valve V 15 a , the valve V 13 b , the valve V 14 b , the valve V 15 b , the valve V 13 c , the valve V 14 c and the valve V 15 c are closed, the heat transfer gas is supplied into the heat transfer spaces DSN (DS 1 , DS 2 and DS 3 ) from the gas source GS.
  • DSN DS 1 , DS 2 and DS 3
  • valve V 15 a , the valve V 15 b and the valve V 15 c are opened while the valve V 11 a , the valve V 12 a , the valve V 13 a , the valve V 14 a , the valve V 11 b , the valve V 12 b , the valve V 13 b , the valve V 14 b , the valve V 11 c , the valve V 12 c , the valve V 13 c and the valve V 14 c are closed, the heat transfer spaces DSN (DS 1 , DS 2 and DS 3 ) are decompressed by the gas exhaust device VU.
  • the method MT will be discussed for an example case where the method MT is applied to the target object W shown in FIG. 2 by using the plasma processing apparatus 100 .
  • the temperature of the electrostatic chuck 120 is set to be equal to or lower than ⁇ 30° C. for main etching to be described later.
  • the coolant is circulated between the chiller unit TU and the path 117 f , and, also, between the heat transfer spaces DSN and the chiller unit TU.
  • the valve V 21 , the valve V 22 , the valve V 31 a , the valve V 32 a , the valve V 31 b , the valve V 32 b , the valve V 31 c and the valve V 32 c are opened, while the other valves of the pipeline system PS are closed.
  • the multiple heaters HN are set to be off. That is, in the process ST 1 , no power is supplied to the heaters HN from the heater power supply 161 .
  • the target object W is carried into the chamber 112 c .
  • the target object W is placed on and held by the electrostatic chuck 120 .
  • the processing gas is supplied into the chamber 112 c from the gas source group 40 .
  • the pressure of the chamber 112 c is set to be a preset pressure by the gas exhaust device 150 .
  • the first high frequency power is output from the first high frequency power supply 62 for plasma generation. Accordingly, the plasma of the processing gas is generated within the chamber 112 c .
  • the second high frequency power may be supplied to the lower electrode of the stage 116 from the second high frequency power supply 64 .
  • the etching target film EF is etched by ions and/or radicals in this plasma.
  • the etching target film EF is etched by the ions and/or radicals in the plasma of the processing gas in the state that the temperature of the electrostatic chuck 120 is set to be equal to or lower than ⁇ 30° C. Opening/closing states of the multiple valves of the pipeline system PS when the main etching ST 31 is being performed may be the same as the opening/closing states of the valves of the pipeline system PS in the process ST 1 .
  • the temperature of the electrostatic chuck 120 when the overetching ST 32 is being performed may be set to be, for example, higher than ⁇ 30° C. and lower than 0° C.
  • the temperature of the electrostatic chuck 120 during the overetching ST 32 may not be limited to the temperature higher than ⁇ 30° C. and lower than 0° C.
  • the neutralization of the electrostatic chuck 120 is performed.
  • a voltage having an opposite polarity to the voltage applied to the attraction electrode 125 of the electrostatic chuck 120 when the electrostatic chuck 120 is holding the target object W is applied to the attraction electrode 125 of the electrostatic chuck 120 .
  • the temperature of the electrostatic chuck 120 is raised to be equal to or higher than 0° C.
  • the valve V 21 , the valve V 22 , the valve V 15 a , the valve V 15 b and the valve V 15 c are opened, and the other valves of the pipeline system PS are closed.
  • the power is supplied from the heater power supply 161 to the multiple heaters HN such that the corresponding heaters HN generate heat.
  • the heat transfer spaces DSN are decompressed by the gas exhaust device VU. As a result, the heat transfer between the electrostatic chuck 120 and the cooling table 117 is suppressed. Further, in the process ST 5 , the heaters HN generate heat. Thus, a time period required to raise the temperature of the electrostatic chuck 120 is shortened in the process ST 5 .
  • the target object W is carried out of the chamber 112 c .
  • the temperature of the electrostatic chuck 120 is maintained to be equal to or higher than 0° C.
  • the opening/closing states of the multiple valves of the pipeline system PS may be the same as the opening/closing states of the valves of the pipeline system PS in the process ST 5 .
  • the power is applied to the heaters HN from the heater power supply 161 such that the corresponding heaters HN generate heat
  • the coolant is supplied from the chiller unit TU into at least either of the heat transfer spaces DSN (DS 1 , DS 2 and DS 3 ) and the path 117 f .
  • the coolant may be supplied into the path 1171 from the chiller unit TU, and the heat transfer gas may be supplied into the heat transfer spaces DSN (DS 1 , DS 2 and DS 3 ) from the gas source GS.
  • the dummy wafer is carried into the chamber 112 c and is held by the electrostatic chuck 120 .
  • the plasma of the cleaning gas is generated within the chamber 112 c .
  • the cleaning gas is supplied into the chamber 112 c from the gas source group 40 .
  • the first high frequency power is supplied from the first high frequency power supply 62 for plasma generation.
  • the neutralization of the electrostatic chuck 120 is performed.
  • the dummy wafer is carried out of the chamber 112 c .
  • the plasma of the cleaning gas is generated within the chamber 112 c in the state that an object such as the dummy wafer is not placed on the electrostatic chuck 120 .
  • the neutralization of the electrostatic chuck 120 is performed in the same way as in the process ST 4 .
  • the temperature of the electrostatic chuck 120 is raised in the same way as in the process ST 5 .
  • the target object W is carried out of the chamber 112 c.

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