US10217965B2 - Organic light emitting diode device and display apparatus - Google Patents
Organic light emitting diode device and display apparatus Download PDFInfo
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- US10217965B2 US10217965B2 US15/316,846 US201615316846A US10217965B2 US 10217965 B2 US10217965 B2 US 10217965B2 US 201615316846 A US201615316846 A US 201615316846A US 10217965 B2 US10217965 B2 US 10217965B2
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- 239000000463 material Substances 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 239000011521 glass Substances 0.000 claims abstract description 39
- 239000004642 Polyimide Substances 0.000 claims description 71
- 229920001721 polyimide Polymers 0.000 claims description 71
- 239000011159 matrix material Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 17
- 239000000126 substance Substances 0.000 claims description 14
- 239000012780 transparent material Substances 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims 11
- 239000011248 coating agent Substances 0.000 claims 3
- 238000000576 coating method Methods 0.000 claims 3
- 230000000694 effects Effects 0.000 description 12
- 239000002245 particle Substances 0.000 description 11
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 238000012856 packing Methods 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 239000002131 composite material Substances 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 3
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 3
- 239000004793 Polystyrene Substances 0.000 description 3
- 229920002223 polystyrene Polymers 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 description 2
- 238000005119 centrifugation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920005575 poly(amic acid) Polymers 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H01L51/5268—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/877—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/02—Diffusing elements; Afocal elements
- G02B5/0205—Diffusing elements; Afocal elements characterised by the diffusing properties
- G02B5/0236—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place within the volume of the element
- G02B5/0242—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place within the volume of the element by means of dispersed particles
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/02—Diffusing elements; Afocal elements
- G02B5/0205—Diffusing elements; Afocal elements characterised by the diffusing properties
- G02B5/0236—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place within the volume of the element
- G02B5/0247—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place within the volume of the element by means of voids or pores
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H01L51/5203—
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- H01L51/56—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H01L2251/5369—
-
- H01L2251/558—
-
- H01L51/0096—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
Definitions
- the present invention relates to a display technical field, and more particularly to an organic light emitting diode device and a display apparatus.
- OLED organic light emitting diode
- a layer of a high index of refraction substrate is further introduced to transfer the photons outside the substrate.
- Nanometer/micrometer metal oxide particles with a high index of refraction such as TiO2, ZrO2, and so on, are added as a scattering medium to change a direction of light propagation for emitting much more photons out of the device.
- a drawback of this method is that the index of refraction of the scattering medium is relatively high, and the difference between the substrate and the scattering particles is reduced. The scattering effect in the substrate is greatly reduced, and the light extracting efficiency is reduced.
- An object of the present invention is to provide an organic light emitting diode device and a display apparatus to solve a technical problem of a relatively poor light extracting efficiency induced by a poor scattering effect of the organic light emitting diode device existing in the conventional technologies.
- an organic light emitting diode device of the present invention is constructed, which comprises:
- the material of the light extracting enhanced layer comprises hollow polyimide balls and a polyimide matrix.
- the hollow polyimide balls are formed by a chemical imidization method.
- a ratio of the hollow polyimide balls with respect to the polyimide matrix is from 40% to 60%.
- an organic light emitting diode device of the present invention is constructed, which comprises:
- the material of the light extracting enhanced layer comprises hollow polyimide balls and a polyimide matrix.
- the hollow polyimide balls are formed by a chemical imidization method.
- a ratio of the hollow polyimide balls with respect to the polyimide matrix is from 40% to 60%.
- a thickness of the light extracting enhanced layer is between 2 ⁇ m and 6 ⁇ m.
- a material of the first electrode is a non-transparent material.
- the present invention further provides a display apparatus, comprising: a plurality of organic light emitting diode devices, each of the organic light emitting diode devices comprises:
- the material of the light extracting enhanced layer comprises hollow polyimide balls and a polyimide matrix.
- the hollow polyimide balls are formed by a chemical imidization method.
- a ratio of the hollow polyimide balls with respect to the polyimide matrix is from 40% to 60%.
- a thickness of the light extracting enhanced layer is between 2 ⁇ m and 6 ⁇ m.
- the light extracting enhanced layer is located below the glass substrate when a material of the first electrode is a transparent material.
- the light extracting enhanced layer is located on the second electrode when a material of the first electrode is a non-transparent material.
- a relatively high contrast of index of refraction is formed by adding a light extracting enhanced layer formed by a material with a relatively high index of refraction and a material with a relatively low index of refraction onto the outermost layer of the conventional organic light emitting diode device, thereby improving the scattering effect and the light extracting efficiency.
- FIG. 1 is a structural schematic diagram of a first kind of an organic light emitting diode device of the present invention.
- FIG. 2 is a structural schematic diagram of a second kind of an organic light emitting diode device of the present invention.
- FIG. 1 is a structural schematic diagram of a first kind of an organic light emitting diode device of the present invention.
- an organic light emitting diode device of the present invention comprises: a glass substrate 11 , a first electrode 12 , an organic light emitting layer 13 , a second electrode 14 and a light extracting enhanced layer 20 .
- the first electrode 12 is disposed on the glass substrate 11 .
- the organic light emitting layer 13 is located on the first electrode 12 .
- the second electrode 14 is disposed on the organic light emitting layer 13 .
- a thin film packing layer can be further disposed on the second electrode 14 , wherein a material of the light extracting enhanced layer 20 comprises a first material with a first index of refraction and a second material with a second index of refraction, and a difference value between the first index of refraction and the second index of refraction is greater than a preset threshold value, i.e., a difference between the first index of refraction and the second index of refraction is relatively high.
- the preset threshold value can be set based on experience, i.e., the light extracting enhanced layer is formed by a material with a relatively high gradient of index of refraction.
- a material of the first electrode 12 can be a transparent material, such as indium tin oxide.
- a material of the second electrode 14 is a non-transparent material.
- the material of the light extracting enhanced layer 20 comprises hollow polyimide balls 21 and a polyimide matrix 22 . Due to the index of refraction of the hollow polyimide balls being relatively low and the index of refraction of the polyimide matrix being relatively high, a relatively high gradient of index of refraction can be formed to improve the scattering effect and increase the light extracting efficiency.
- the hollow polyimide balls 21 are formed by a chemical imidization method. Since particles in the conventional nanometer or micrometer scattering layer are easily adhesive therebetween, the uniformity of particles is poor. Therefore, the hollow polyimide balls with excellent monodisperse can be obtained by the chemical imidization method, such that the hollow polyimide balls are not adhesive therebetween. The uniformity of particles is improved, and the light extracting efficiency is further increased.
- a ratio of the hollow polyimide balls 21 with respect to the polyimide matrix 22 is from 40% to 60%, more preferably from 45% to 50%.
- the scattering effect is poor due to having too small a ratio. If the ratio is too large, a material is wasted much more and causes a relatively high cost.
- a thickness of the light extracting enhanced layer 20 is between 2 ⁇ m and 6 ⁇ m, more preferably between 3 ⁇ m and 5 ⁇ m.
- the contrast of index of refraction is relatively poor due to having too small a thickness. Too large a thickness will increase an entire thickness of the organic light emitting diode device. Further, the thickness of the display apparatus is increased.
- FIG. 2 is a structural schematic diagram of a second kind of an organic light emitting diode device of the present invention.
- an organic light emitting diode device of the present invention comprises: a glass substrate 11 , a first electrode 15 , an organic light emitting layer 13 , a second electrode 16 , and a light extracting enhanced layer 20 .
- the first electrode 15 is disposed on the glass substrate 11 .
- the organic light emitting layer 13 is located on the first electrode 15 .
- the second electrode 16 is disposed on the organic light emitting layer 13 , wherein the light extracting enhanced layer 20 is located on the second electrode 16 .
- a thin film packing layer can be further disposed on the second electrode 16 , and the light extracting enhanced layer 20 is located on the thin film packing layer.
- a material of the light extracting enhanced layer 20 comprises a first material with a first index of refraction and a second material with a second index of refraction, and a difference value between the first index of refraction and the second index of refraction is greater than a preset threshold value, i.e., a difference between the first index of refraction and the second index of refraction is relatively high.
- the preset threshold value can be set based on experience, i.e., the light extracting enhanced layer is formed by a material with a relatively high gradient of index of refraction.
- a material of the first electrode 15 is a non-transparent material, such as metal.
- a material of the second electrode 16 is a magnesium aluminum alloy, i.e., photons can pass through the second electrode 16 .
- the material of the light extracting enhanced layer 20 comprises hollow polyimide balls 21 and a polyimide matrix 22 . Due to the index of refraction of the hollow polyimide balls being relatively low and the index of refraction of the polyimide matrix being relatively high, a relatively high gradient of index of refraction can be formed to improve the scattering effect and increase the light extracting efficiency.
- the hollow polyimide balls 21 are formed by a chemical imidization method. Since particles in the conventional nanometer or micrometer scattering layer are easily adhesive therebetween, the uniformity of particles is poor. Therefore, the hollow polyimide balls with excellent monodisperse can be obtained by the chemical imidization method, such that the hollow polyimide balls are not adhesive therebetween. The uniformity of particles is improved, and the light extracting efficiency is further increased.
- a ratio of the hollow polyimide balls 21 with respect to the polyimide matrix 22 is from 40% to 60%, more preferably from 45% to 50%.
- the scattering effect is poor due to too small a ratio. If the ratio is too large, a material is wasted much more and causes a relatively high cost.
- a thickness of the light extracting enhanced layer 20 is between 2 ⁇ m and 6 ⁇ m, more preferably between 3 ⁇ m and 5 ⁇ m.
- the contrast of index of refraction is relatively poor due to too small a thickness. Too large a thickness will increase an entire thickness of the organic light emitting diode device. Further, the thickness of the display apparatus is increased.
- the above hollow polyimide balls are formed by the following methods:
- polystyrene template sulfonated balls are dispersed in the solvent DMAc, and the linear polystyrene template sulfonated balls are removed by centrifugation.
- the remaining polystyrene template sulfonated balls are dispersed in the solvent, and the solvent is dropped into a solvent containing PAA at a certain rate.
- the unnecessary and unadsorbed PAA is removed by centrifugation, and the PAA hollow composite balls are washed many times by a solvent.
- an imidization is performed on the PAA hollow composite balls by using a chemical imidization method.
- a certain amount of acetic anhydride and pyridine are dropped into the dispersed liquid of the PAA hollow composite balls.
- a mixing liquid of water and ethanol After stirring a period of time at room temperature, a mixing liquid of water and ethanol.
- the precipitated powder are washed by water and ethanol in many times, and then the precipitated powder is heated and crosslinks under a nitrogen atmosphere to obtain the PI's hollow composite balls.
- the dispersed liquid of the PI's hollow composite bails is coated below the glass substrate or on the thin film packing layer in FIG. 1 or FIG. 2 . Since the hollow polyimide balls are formed by using the chemical imidization method, an effect of “isolating” each other is achieved by the hollow polyimide balls in the dispersed liquid accordingly. Then, after a heat treatment, the balls therebetween are not easily to cause an adhesive phenomenon again. Then, the high index of refraction polyimide matrix is used as a substrate or a backfill layer material is coated to the outermost layer, and a relatively high difference of index of refraction, with respect to a low index of refraction center formed by the hollow balls, is formed.
- a relatively high contrast of index of refraction is formed by adding a light extracting enhanced layer formed by a material with a relatively high index of refraction and a material with a relatively low index of refraction below the glass substrate or on the second electrode, thereby improving the scattering effect and the light extracting efficiency.
- the present invention further provides a display apparatus which comprises a plurality of organic light emitting diode devices, as shown in FIG. 1 or FIG. 2 .
- Each of the organic light emitting diode devices comprises: a glass substrate 11 , a first electrode 12 or 15 , an organic light emitting layer 13 , a second electrode 14 or 16 and a light extracting enhanced layer 20 .
- the first electrode 12 or 15 is disposed on the glass substrate 11 .
- the organic light emitting layer 13 is located on the first electrode 12 or 15 .
- the second electrode 14 or 16 is disposed on the organic light emitting layer 13 , wherein the light extracting enhanced layer 20 is located below the glass substrate 11 or on the second electrode 14 or 16 .
- a thin film packing layer can be further disposed on the second electrode 14 or 16 , and the light extracting enhanced layer 20 is located on the thin film packing layer.
- a material of the light extracting enhanced layer 20 comprises a first material with a first index of refraction and a second material with a second index of refraction, and a difference value between the first index of refraction and the second index of refraction is greater than a preset threshold value, i.e., a difference between the first index of refraction and the second index of refraction is relatively high.
- the preset threshold value can be set based on experience, i.e., the light extracting enhanced layer is formed by a material with a relatively high gradient of index of refraction.
- a material of the first electrode 12 can be a transparent material, such as indium tin oxide.
- a material of the second electrode 14 is a non-transparent material.
- the light extracting enhanced layer 20 is located below the glass substrate 11 .
- a material of the first electrode 15 is a non-transparent material, such as metal.
- the light extracting enhanced layer 20 is located on the second electrode 16 .
- a material of the second electrode 16 is a magnesium aluminum alloy, i.e., photons can pass through the second electrode 16 .
- the material of the light extracting enhanced layer 20 comprises hollow polyimide balls 21 and a polyimide matrix 22 . Due to the index of refraction of the hollow polyimide balls being relatively low and the index of refraction of the polyimide matrix being relatively high, a relatively high gradient of index of refraction can be formed to improve the scattering effect and increase the light extracting efficiency.
- the hollow polyimide balls 21 are formed by a chemical imidization method. Since particles in the conventional nanometer or micrometer scattering layer are easily adhesive therebetween, the uniformity of particles is poor. Therefore, the hollow polyimide balls with excellent monodisperse can be obtained by the chemical imidization method, such that the hollow polyimide balls are not adhesive therebetween. The uniformity of particles is improved, and the light extracting efficiency is further increased.
- a ratio of the hollow polyimide balls 21 with respect to the polyimide matrix 22 is from 40% to 60%, more preferably from 45% to 50%.
- the scattering effect is poor due to too small a ratio. If the ratio is too large, a material is wasted much more and causes a relatively high cost.
- a thickness of the light extracting enhanced layer 20 is between 2 ⁇ m and 6 ⁇ m, more preferably between 3 ⁇ m and 5 ⁇ m.
- the contrast of index of refraction is relatively poor due to too small a thickness. Too large a thickness will increase an entire thickness of the organic light emitting diode device. Further, the thickness of the display apparatus is increased.
- a relatively high contrast of index of refraction is formed by adding a light extracting enhanced layer formed by a material with a relatively high index of refraction and a material with a relatively low index of refraction below the glass substrate or on the second electrode, thereby improving the scattering effect and the light extracting efficiency.
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Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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CN201610429048.3A CN105957974B (zh) | 2016-06-16 | 2016-06-16 | 一种有机发光二极管器件及显示装置 |
CN201610429048.3 | 2016-06-16 | ||
CN201610429048 | 2016-06-16 | ||
PCT/CN2016/089717 WO2017215060A1 (zh) | 2016-06-16 | 2016-07-12 | 一种有机发光二极管器件及显示装置 |
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US20180212197A1 US20180212197A1 (en) | 2018-07-26 |
US10217965B2 true US10217965B2 (en) | 2019-02-26 |
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US (1) | US10217965B2 (ja) |
JP (1) | JP6811311B2 (ja) |
KR (1) | KR102115124B1 (ja) |
CN (1) | CN105957974B (ja) |
EA (1) | EA036248B1 (ja) |
GB (1) | GB2565447A (ja) |
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KR102377173B1 (ko) * | 2015-08-25 | 2022-03-22 | 엘지디스플레이 주식회사 | 유기발광다이오드 표시장치 |
CN108878674A (zh) * | 2017-05-11 | 2018-11-23 | 京东方科技集团股份有限公司 | 显示基板及其制作方法、显示装置 |
CN109473563B (zh) * | 2017-09-08 | 2021-05-07 | 上海和辉光电股份有限公司 | 一种oled发光器件 |
CN112038501B (zh) * | 2020-09-08 | 2021-08-10 | 长春海谱润斯科技股份有限公司 | 一种顶发射有机电致发光器件 |
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WO2008133285A1 (ja) | 2007-04-24 | 2008-11-06 | Asahi Glass Company, Limited | 膜付き基板、透明導電性膜付き基板および発光素子 |
US20120063145A1 (en) | 2009-05-12 | 2012-03-15 | Panasonic Corporation | Sheet and light-emitting device |
WO2014006987A1 (ja) | 2012-07-04 | 2014-01-09 | シャープ株式会社 | 蛍光材料、蛍光塗料、蛍光体基板、電子機器およびledパッケージ |
CN103996797A (zh) | 2014-06-11 | 2014-08-20 | 广州新视界光电科技有限公司 | 一种有机电致发光器件及其制备方法 |
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US7602118B2 (en) * | 2005-02-24 | 2009-10-13 | Eastman Kodak Company | OLED device having improved light output |
JP5133107B2 (ja) * | 2008-03-28 | 2013-01-30 | 三洋化成工業株式会社 | 中空粒子の製造方法 |
JP5260129B2 (ja) * | 2008-04-28 | 2013-08-14 | 三洋化成工業株式会社 | 中空樹脂粒子 |
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GB201814851D0 (en) | 2018-10-24 |
US20180212197A1 (en) | 2018-07-26 |
GB2565447A (en) | 2019-02-13 |
JP6811311B2 (ja) | 2021-01-13 |
CN105957974B (zh) | 2017-11-17 |
KR20190017043A (ko) | 2019-02-19 |
KR102115124B1 (ko) | 2020-05-25 |
CN105957974A (zh) | 2016-09-21 |
EA201990029A1 (ru) | 2019-05-31 |
WO2017215060A1 (zh) | 2017-12-21 |
JP2019518319A (ja) | 2019-06-27 |
EA036248B1 (ru) | 2020-10-19 |
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