UA100089C2 - Пристрій та спосіб вимірювання показника зростання товщини кремнієвих стрижнів у кремнієосаджувальному реакторі - Google Patents

Пристрій та спосіб вимірювання показника зростання товщини кремнієвих стрижнів у кремнієосаджувальному реакторі

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Publication number
UA100089C2
UA100089C2 UAA201109932A UAA201109932A UA100089C2 UA 100089 C2 UA100089 C2 UA 100089C2 UA A201109932 A UAA201109932 A UA A201109932A UA A201109932 A UAA201109932 A UA A201109932A UA 100089 C2 UA100089 C2 UA 100089C2
Authority
UA
Ukraine
Prior art keywords
silicon
arrangement
temperature measurement
measurement
thickness growth
Prior art date
Application number
UAA201109932A
Other languages
English (en)
Russian (ru)
Inventor
Вілфрід Вольмар
Франк Стубхан
Original Assignee
Центротерм Сітек Гмбх
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Центротерм Сітек Гмбх filed Critical Центротерм Сітек Гмбх
Publication of UA100089C2 publication Critical patent/UA100089C2/uk

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4418—Methods for making free-standing articles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0683—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating measurement during deposition or removal of the layer

Abstract

Винахід належить до способу вимірювання зростання товщини кремнієвих стрижнів у кремнієосаджувальному реакторі за допомогою пристрою для вимірювання температури, наприклад пірометра, який розташовано зовні реактора. Винахід спрямований на забезпечення способу, який би дозволив вимірювання зростання товщини постійно протягом всього процесу осадження з належною точністю. Ця задача була досягнута наступним чином - безконтактний пристрій (4) для вимірювання температури був запропонований та розташований зовні кремнієосаджувального реактора попереду від оглядового віконця (2), таким чином пристрій для вимірювання температури (4) має можливість вільно обертатися горизонтально за віссю обертання (5) за допомогою обертаючого приводу (9), у якому вісь обертання (5) проходить паралельно до поздовжньої осі кремнієвого стрижня (1) та де центральна вісь (6) пристрою для вимірювання температури проходить через вісь обертання (5).
UAA201109932A 2009-01-29 2010-01-28 Пристрій та спосіб вимірювання показника зростання товщини кремнієвих стрижнів у кремнієосаджувальному реакторі UA100089C2 (uk)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009006600 2009-01-29
DE102009010086A DE102009010086B4 (de) 2009-01-29 2009-02-24 Anordnung und Verfahren zur Messung der Temperatur und des Dickenwachstums von Siliziumstäben in einem Silizium-Abscheidereaktor
PCT/EP2010/050988 WO2010086363A2 (en) 2009-01-29 2010-01-28 Arrangement and method for measurement of the temperature and of the thickness growth of silicon rods in a silicon deposition reactor

Publications (1)

Publication Number Publication Date
UA100089C2 true UA100089C2 (uk) 2012-11-12

Family

ID=42317574

Family Applications (1)

Application Number Title Priority Date Filing Date
UAA201109932A UA100089C2 (uk) 2009-01-29 2010-01-28 Пристрій та спосіб вимірювання показника зростання товщини кремнієвих стрижнів у кремнієосаджувальному реакторі

Country Status (11)

Country Link
US (1) US20120027916A1 (uk)
EP (1) EP2391581B1 (uk)
JP (1) JP5688033B2 (uk)
KR (1) KR20110134394A (uk)
CN (1) CN102300809B (uk)
DE (1) DE102009010086B4 (uk)
ES (1) ES2411136T3 (uk)
MY (1) MY154184A (uk)
TW (1) TWI430946B (uk)
UA (1) UA100089C2 (uk)
WO (1) WO2010086363A2 (uk)

Families Citing this family (6)

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US20120322175A1 (en) * 2011-06-14 2012-12-20 Memc Electronic Materials Spa Methods and Systems For Controlling SiIicon Rod Temperature
US9115423B2 (en) * 2011-07-13 2015-08-25 Memc Electronic Materials S.P.A. Methods and systems for monitoring and controlling silicon rod temperature
DE102015211853B3 (de) * 2015-06-25 2016-06-16 Thyssenkrupp Ag Verfahren zur Beschichtung einer Oberfläche eines Metallbandes sowie Metallbandbeschichtungsvorrichtung
CA2998878A1 (en) * 2015-09-22 2017-03-30 Valinge Innovation Ab Panels comprising a mechanical locking device and an assembled product comprising the panels
JP6984018B2 (ja) * 2017-12-05 2021-12-17 ワッカー ケミー アクチエンゲゼルシャフトWacker Chemie AG 表面温度を決定する方法
WO2020234401A1 (de) * 2019-05-21 2020-11-26 Wacker Chemie Ag Verfahren zur herstellung von polykristallinem silicium

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NL218408A (uk) * 1954-05-18 1900-01-01
AT222184B (de) * 1960-08-25 1962-07-10 Siemens Ag Verfahren zum Herstellen von Halbleiterstäben
DE2048592A1 (de) * 1970-06-25 1972-02-03 Slick Tripod Co Ltd Kameralagerungs oder Befestigungskopf
DE2116746C3 (de) * 1971-04-06 1978-12-07 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von Halbleiterstäben durch thermische Zersetzung einer Halbleiterverbindung
US3791887A (en) * 1971-06-28 1974-02-12 Gte Laboratories Inc Liquid-phase epitaxial growth under transient thermal conditions
DE2518853C3 (de) * 1975-04-28 1979-03-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Abscheiden von elementarem Silicium aus einem Reaktionsgas
DE2609564A1 (de) * 1976-03-08 1977-09-15 Siemens Ag Verfahren zum abscheiden von elementarem silicium aus der gasphase
JPS58182240A (ja) * 1982-04-19 1983-10-25 Nec Ic Microcomput Syst Ltd 半導体表面過渡温度測定装置
JPS6042296A (ja) * 1983-08-16 1985-03-06 Hamamatsu Photonics Kk 引上中に単結晶の直径を制御する装置
DE3419244A1 (de) * 1984-05-21 1985-11-21 Mannesmann AG, 4000 Düsseldorf Vorrichtung zur optischen temperaturmessung in einer umgebung hoeherer temperatur
JPS6156428A (ja) * 1984-08-28 1986-03-22 Chino Works Ltd 単結晶の温度および直径の測定装置
US4919899A (en) * 1988-02-29 1990-04-24 Herrmann Frederick T Crystal growth apparatus
JPH07101704B2 (ja) * 1990-08-09 1995-11-01 アプライド マテリアルズ インコーポレイテッド ウェーハ上に堆積される薄膜の厚さをその場で測定する方法及び装置
JP3621311B2 (ja) * 1999-11-15 2005-02-16 住友チタニウム株式会社 多結晶シリコン製造プロセスにおけるシリコン直径及び温度の推定方法並びにこれを用いた操業管理方法
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DE10329205A1 (de) * 2003-06-28 2005-01-27 Infineon Technologies Ag Verfahren und Vorrichtung zum berührungslosen Bestimmen der Oberflächentemperatur eines Halbleiterwafers
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Also Published As

Publication number Publication date
EP2391581B1 (en) 2013-01-16
WO2010086363A2 (en) 2010-08-05
KR20110134394A (ko) 2011-12-14
TW201034947A (en) 2010-10-01
ES2411136T3 (es) 2013-07-04
WO2010086363A3 (en) 2010-09-23
DE102009010086B4 (de) 2013-04-11
CN102300809B (zh) 2014-03-12
EP2391581A2 (en) 2011-12-07
MY154184A (en) 2015-05-15
US20120027916A1 (en) 2012-02-02
JP5688033B2 (ja) 2015-03-25
DE102009010086A1 (de) 2010-08-12
JP2012516276A (ja) 2012-07-19
CN102300809A (zh) 2011-12-28
TWI430946B (zh) 2014-03-21

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