TWM644795U - 使用在半導體處理室內的裝置 - Google Patents

使用在半導體處理室內的裝置 Download PDF

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Publication number
TWM644795U
TWM644795U TW112200700U TW112200700U TWM644795U TW M644795 U TWM644795 U TW M644795U TW 112200700 U TW112200700 U TW 112200700U TW 112200700 U TW112200700 U TW 112200700U TW M644795 U TWM644795 U TW M644795U
Authority
TW
Taiwan
Prior art keywords
heater
plate
layer
shaft
ceramic
Prior art date
Application number
TW112200700U
Other languages
English (en)
Chinese (zh)
Inventor
布蘭特 艾略特
法蘭克 巴馬
艾弗瑞德 艾略特
亞歷山大 威瑟
丹尼斯 雷克斯
理察 修斯特
Original Assignee
美商瓦特隆電子製造公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/831,670 external-priority patent/US9984866B2/en
Application filed by 美商瓦特隆電子製造公司 filed Critical 美商瓦特隆電子製造公司
Publication of TWM644795U publication Critical patent/TWM644795U/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible
    • H05B3/28—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
    • H05B3/283—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/002—Heaters using a particular layout for the resistive material or resistive elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/037—Heaters with zones of different power density

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Resistance Heating (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Surface Heating Bodies (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Control And Other Processes For Unpacking Of Materials (AREA)
TW112200700U 2013-03-15 2014-03-14 使用在半導體處理室內的裝置 TWM644795U (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/831,670 US9984866B2 (en) 2012-06-12 2013-03-15 Multiple zone heater
US13/831,670 2013-03-15

Publications (1)

Publication Number Publication Date
TWM644795U true TWM644795U (zh) 2023-08-11

Family

ID=53040011

Family Applications (2)

Application Number Title Priority Date Filing Date
TW112200700U TWM644795U (zh) 2013-03-15 2014-03-14 使用在半導體處理室內的裝置
TW103109558A TWI632589B (zh) 2013-03-15 2014-03-14 供使用於半導體製造製程的晶圓夾頭

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW103109558A TWI632589B (zh) 2013-03-15 2014-03-14 供使用於半導體製造製程的晶圓夾頭

Country Status (5)

Country Link
EP (1) EP2973659A4 (https=)
JP (1) JP6382295B2 (https=)
KR (1) KR102171734B1 (https=)
CN (1) CN105518825B (https=)
TW (2) TWM644795U (https=)

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* Cited by examiner, † Cited by third party
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KR102461150B1 (ko) 2015-09-18 2022-11-01 삼성전자주식회사 3차원 반도체 메모리 장치
CN111373487B (zh) 2017-10-24 2024-09-24 沃特洛电气制造公司 设有陶瓷绝缘体和铝套的电连接器及其制造方法
US11961747B2 (en) * 2018-03-28 2024-04-16 Kyocera Corporation Heater and heater system
KR102608397B1 (ko) * 2018-10-16 2023-12-01 주식회사 미코세라믹스 미들 영역 독립 제어 세라믹 히터
KR102558722B1 (ko) * 2018-12-20 2023-07-24 엔지케이 인슐레이터 엘티디 세라믹 히터
JP7520111B2 (ja) * 2019-10-12 2024-07-22 アプライド マテリアルズ インコーポレイテッド 背面パージが設けられ斜面パージが組み込まれたウエハヒータ
JP7240341B2 (ja) 2020-02-03 2023-03-15 日本碍子株式会社 セラミックヒータ及び熱電対ガイド
JP7202322B2 (ja) * 2020-02-03 2023-01-11 日本碍子株式会社 セラミックヒータ
JP7360992B2 (ja) * 2020-06-02 2023-10-13 京セラ株式会社 端子付構造体
KR102242589B1 (ko) * 2020-09-09 2021-04-21 주식회사 미코세라믹스 세라믹 히터
JP7468710B2 (ja) * 2021-01-26 2024-04-16 住友電気工業株式会社 ヒータ
JP2024172480A (ja) * 2023-05-31 2024-12-12 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置及びプログラム
KR102844318B1 (ko) 2023-12-19 2025-08-08 주식회사 에스지에스코리아 멀티 존 히터의 제어 장치 및 제어 방법
WO2026038385A1 (ja) * 2024-08-16 2026-02-19 日本碍子株式会社 セラミックヒータおよびセラミックヒータの製造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4854495A (en) * 1986-06-20 1989-08-08 Hitachi, Ltd. Sealing structure, method of soldering and process for preparing sealing structure
US6583638B2 (en) * 1999-01-26 2003-06-24 Trio-Tech International Temperature-controlled semiconductor wafer chuck system
KR20010111058A (ko) * 2000-06-09 2001-12-15 조셉 제이. 스위니 전체 영역 온도 제어 정전기 척 및 그 제조방법
JP3897563B2 (ja) * 2001-10-24 2007-03-28 日本碍子株式会社 加熱装置
JP4098112B2 (ja) * 2003-02-14 2008-06-11 日本発条株式会社 ヒータユニット
JP4238772B2 (ja) * 2003-05-07 2009-03-18 東京エレクトロン株式会社 載置台構造及び熱処理装置
JP2005166354A (ja) * 2003-12-01 2005-06-23 Ngk Insulators Ltd セラミックヒーター
WO2006046308A1 (ja) * 2004-10-29 2006-05-04 Cxe Japan Co., Ltd. 半導体基板の支持体
JP4787568B2 (ja) * 2004-11-16 2011-10-05 日本碍子株式会社 接合剤、窒化アルミニウム接合体及びその製造方法
JP4640842B2 (ja) * 2006-10-11 2011-03-02 日本碍子株式会社 加熱装置
JP4450106B1 (ja) * 2008-03-11 2010-04-14 東京エレクトロン株式会社 載置台構造及び処理装置
JP5791412B2 (ja) * 2010-07-26 2015-10-07 日本碍子株式会社 セラミックヒーター
JP5855402B2 (ja) * 2010-09-24 2016-02-09 日本碍子株式会社 サセプター及びその製法
WO2012039453A1 (ja) * 2010-09-24 2012-03-29 日本碍子株式会社 半導体製造装置部材
JP2012080103A (ja) * 2010-10-01 2012-04-19 Ngk Insulators Ltd サセプター及びその製法
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WO2012118606A2 (en) * 2011-03-01 2012-09-07 Applied Materials, Inc. Thin heated substrate support

Also Published As

Publication number Publication date
EP2973659A1 (en) 2016-01-20
EP2973659A4 (en) 2016-11-09
CN105518825A (zh) 2016-04-20
JP2016522881A (ja) 2016-08-04
TW201506989A (zh) 2015-02-16
KR20150132515A (ko) 2015-11-25
KR102171734B1 (ko) 2020-10-29
JP6382295B2 (ja) 2018-08-29
TWI632589B (zh) 2018-08-11
CN105518825B (zh) 2018-02-06

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