TWM612285U - Deposition processing apparatus for - Google Patents

Abstract

A deposition processing device includes a diffusion disk, a plurality of gas through holes, a shielding group, a gas guide ring, a gas pumping ring, and a gas pumping pipe. The diffuser includes a first surface and a second surface. The first surface is a stepped structure gradually rising from the center of the diffuser to the circumference, and the second surface is a planar structure. A plurality of gas through holes are provided through the diffuser, and the shielding group It includes a shielding plate arranged on the diffuser plate, and an air duct arranged on the shielding plate. The air guide ring is arranged on the periphery of the diffuser plate, including a body, and a plurality of air holes opened on the body. The air suction ring is arranged on the The perimeter of the air guide ring includes a seat body surrounding the gas space, each air guide hole is connected to the gas space, and the air extraction pipe is connected to the air extraction ring. The gas enters the gas space through a plurality of air guide holes, and then the air extraction tube outwards Pull out.

Description

Deposition processing device

This model relates to a processing device, in particular to a deposition processing device.

High-temperature chemical vapor deposition (CVD) processes are widely used in the semiconductor industry. The yield and quality of the substrate coating process depend on the substrate film deposition uniformity, and the film thickness uniformity is affected by the coating reaction gas spreading in the reaction chamber. Among them, the chemical vapor deposition equipment is equipped with a gas diffusion plate. The diffusion plate is located in the reaction chamber and is used to disperse the coating reaction gas flow so that the coating gas is evenly dispersed in the reaction chamber to settle to the substrate to be coated to achieve uniform coating.

Taiwan Invention Patent No. I283437 is a "gas distribution nozzle", which refers to a gas distribution nozzle used in semiconductor processing, which is characterized by a panel with a slender groove or channel type gas outlet. The nozzle is relatively close to the wafer to increase the processing air flow near the edge of the wafer. The edge of the panel is relatively concave relative to the center of the panel. However, the increased mass flow at the edge of the wafer may increase The edge thickness of the deposited material results in a thinner film thickness in the middle, which affects the uniformity of the coating. Furthermore, the conventional gas distribution panel has a concave non-planar structure in which the edge of the panel is concave with respect to the center of the panel, which results in poor accuracy and processing difficulties, and needs to be improved.

The above-mentioned shortcomings all show the various problems derived from the conventional substrate film. Accordingly, in order to increase the degree of gas dispersion in the reaction chamber of the chemical vapor deposition equipment, increase the uniformity of the film thickness, and improve the yield and quality of the coating process, the foregoing conventional knowledge The gas diffusion plate really needs to be improved.

In view of this, the object of the present invention is to provide a deposition processing device, which includes a diffusion plate, a plurality of gas through holes, a shielding group, an air guide ring, an air extraction ring, and an air extraction pipe.

The diffuser includes a first surface and a second surface opposite to the first surface. The first surface is a stepped structure gradually rising from the center of the diffuser to the circumference, and the second surface is a Planar structure, the plurality of gas through holes are arranged through the diffuser, the shielding group includes a shielding plate arranged on the diffuser, and an air duct arranged on the shielding plate, and the air guide ring is arranged on the diffuser The peripheral edge includes a body and a plurality of air guide holes formed on the body. The air suction ring is arranged on the periphery of the air guide ring and includes a seat body surrounding and delimiting a gas space. Each of the air guide holes and the gas The space is connected, the air extraction pipe is connected with the air extraction ring, and a gas enters the air space through the plurality of air guide holes, and then is drawn out from the air extraction pipe.

Preferably, the air guide ring and the air suction ring are arranged as concentric rings of different sizes.

Preferably, the first surface has a first step, a second step surrounding the first step, a third step surrounding the second step, and a surrounding third step A fourth step is provided, and a fifth step is provided around the fourth step, and the first step is located close to the center of the diffuser, and the fifth step is located close to the circumference of the diffuser.

Preferably, the hole-shaped cross-sectional structure of the plurality of gas through holes is a straight hole, and the diameter of the straight hole is 0.1-10 mm.

Preferably, the height difference between adjacent steps is the same.

Preferably, the hole-shaped cross-sectional structure of the plurality of gas through holes is a straight hole connected to an outwardly expanding horn hole, and the outwardly expanding horn hole structure is close to the second surface.

Preferably, the diameter of the straight hole is 0.1-10 mm, and the diameter of the horn hole is 1.5-5 mm.

Preferably, the height of the horn hole is 1 to 5 mm, and the inclination angle of the outward expansion of the horn hole is 30° to 90°.

Preferably, the height difference between the first step and the second step is 1 to 5 mm, the height difference between the second step and the third step is 0.5 to 3 mm, and the third step and the first step are 0.5 to 3 mm. The height difference between the four steps is 0.5-3mm, and the height difference between the fourth step and the fifth step is 0.5-3mm.

Preferably, the diameter difference between adjacent steps is the same.

Preferably, the arrangement density of the gas through holes on the diffuser is 6-10 per square centimeter.

The beneficial effect of the present invention is that the first surface is a stepped structure gradually rising from the center of the diffuser to the circumference, combined with the design of the straight hole connected to the outwardly expanding horn hole, and the horn hole is located on the same plane Above, the gas is enclosed in the plurality of gas through holes to prevent the gas from diffusing and being drawn away early due to insufficient concentration during the pumping process, solving the problem of insufficient gas atmosphere near the center of the diffuser, and reducing the gas The downward flow speed makes it squeeze inward to make up for the slower flow rate in the middle, and increase the gas density and form the effect of a gas curtain, thereby increasing the gas flow velocity near the center of the diffuser to achieve uniform gas coating In addition, the air guide ring and the concentric ring design of the air extraction ring achieve a concentric circle effect, and the air extraction tube located on the air extraction ring can avoid the eccentricity of poor side extraction uniformity.

1: diffuser

11: The first surface

111: The first ladder

112: second ladder

113: The third ladder

114: fourth ladder

115: Fifth Ladder

12: second surface

2: Gas through hole

21: Straight hole

22: Horn hole

3: Masking group

31: Shading plate

32: airway

4: Air guide ring

41: body

42: air guide hole

5: Exhaust ring

50: gas space

51: Block

6: Exhaust pipe

d1: height difference

d2: Aperture

d3: Aperture

d4: height

d5: angle

d6: height difference

d7: diameter

Fig. 1 is a three-dimensional schematic diagram illustrating the state of the diffuser disc of the first preferred embodiment of the new deposition processing apparatus; Fig. 2 is a schematic top view illustrating another perspective of the diffuser disc of the first preferred embodiment; Fig. 3 is a cross-sectional view taken along line AA of Fig. 2; Fig. 4 is a schematic perspective view illustrating the aspect of the first preferred embodiment; Fig. 5 is a schematic side view illustrating another perspective view of the first preferred embodiment Figure 6 is a schematic top view illustrating the second preferred embodiment of the new deposition processing device; Figure 7 is a cross-sectional view of CC of Figure 6; and Figure 8 is a schematic diagram illustrating the second preferred embodiment The cross-sectional flow velocity distribution of gas in a diffuser disk.

The features and technical content of the patent application related to this new model will be clearly presented in the following detailed description of the preferred embodiment with reference to the drawings.

Refer to Figures 1, 2, and 3, which are the first preferred embodiment of the new type of deposition processing device, which includes a diffuser 1, a plurality of gas through holes 2, a shielding group 3, a gas guide ring 4, and a gas exhaust Ring 5, and a suction pipe 6. This model can be used for 8 and 12 inch wafers.

The diffuser 1 includes a first surface 11 and a second surface 12 opposite to the first surface 11. The first surface 11 is a stepped structure gradually rising from the center of the diffuser 1 to the circumference, and The second surface 12 is a plane structure.

Wherein, the first surface 11 has a first step portion 111, a second step portion 112 disposed around the first step portion 111, a third step portion 113 disposed around the second step portion 112, and a third step portion 113 surrounding the second step portion 112. The fourth step 114 provided by the third step 113, and a fifth step 115 provided around the fourth step 114, and the first step 111 is located close to the center of the diffuser 1, and the fifth step The step 115 is arranged close to the circumference of the diffuser 1.

Here, the height difference between adjacent steps is the same. Further, the height difference d1 between the first step portion 111 and the second step portion 112 is 1 to 5 mm, the height difference d1 between the second step portion 112 and the third step portion 113 is 1 to 5 mm, and the third step The height difference d1 between the step 113 and the fourth step 114 is 1 to 5 mm, and the height difference d1 between the fourth step 114 and the fifth step 115 is 1 to 5 mm.

The plurality of gas through holes 2 are arranged through the diffuser plate 1, and the density of the gas through holes 2 on the diffuser plate 1 is 6-10 per square centimeter. Here, the density of the gas through holes 2 is about 32 holes per square centimeter. 5.32cm ² . Gas enters from the first surface 11 and flows outward from the second surface 12. In actual implementation, a shielding plate (not shown in the figure) is arranged above the diffuser plate 1, and the shielding plate is provided with a plurality of openings, and gas flows to the plurality of gas through holes 2 through the openings of the shielding plate.

In the first preferred embodiment, the hole-shaped cross-sectional structure of the plurality of gas through holes 2 is a straight hole 21, and the hole diameter d2 of the straight hole 21 is 0.1-10 mm, and the hole diameter of the adjacent straight hole 21 d2 spacing is 3~10mm. The straight hole 21 located on the first step portion 111 is the shortest, and the straight hole 21 located on the fifth step portion 115 is the longest.

With reference to FIGS. 4 and 5, the shielding set 3 includes a shielding plate 31 arranged on the diffuser 1 and an air duct 32 arranged on the shielding plate 31.

The air guide ring 4 is disposed on the periphery of the diffuser 1 and includes a body 41 and a plurality of air guide holes 42 formed on the body 41, and the material of the air guide ring 4 is ceramic.

The air suction ring 5 is disposed on the periphery of the air guide ring 4 and includes a seat 51 surrounding and defining a gas space 50, and each air guide hole 42 is communicated with the gas space 50. Wherein, the air guide ring 4 and the air suction ring 5 are arranged in concentric rings of different sizes.

The exhaust pipe 6 is connected to the exhaust ring 5, and a gas enters the gas space 50 through the plurality of air guide holes 42, and then the exhaust pipe 6 on one side collects the gas and extracts it outward. Through the air guide ring 4, and the pump The concentric ring design of the air ring 5 achieves the effect of concentric circles, and it cooperates with the air extraction pipe 6 located on the air extraction ring 5 to avoid the eccentricity of poor side extraction uniformity.

Refer to Figures 6 and 7, which are the second preferred embodiment of the new type, which is roughly the same as the first preferred embodiment. The same parts will not be repeated here. The difference lies in the hole pattern of the plurality of gas through holes 2 The cross-sectional structure is that a straight hole 21 is connected to an outwardly expanding horn hole 22, and the outwardly expanding horn hole 22 is close to the second surface 12.

In actual implementation, the horn hole 22 is located on the second surface 12 of the planar structure, which has the effect of simple processing and improved accuracy.

Here, the diameter d2 of the straight hole 21 is 0.1-10 mm, and the diameter d3 of the horn hole 22 is 1.5-5 mm. The height d4 of the horn hole 22 is 1 to 5 mm, and the inclination angle d5 of the outward expansion of the horn hole 22 is 30° to 90°.

The straight holes 21 arranged on the first step 111 close to the center of the diffuser 1 have a shorter flow rate than the straight holes 21 on the fifth step 115 close to the circumference of the diffuser 1, and can be faster To reach the substrate to be coated.

Wherein, the height difference d6 between the first step portion 111 and the second step portion 112 is 1~5mm, the height difference d6 between the second step portion 112 and the third step portion 113 is 0.5~3mm, the third step The height difference d6 between the portion 113 and the fourth step 114 is 0.5 to 3 mm, and the height difference d6 between the fourth step 114 and the fifth step 115 is 0.5 to 3 mm.

Furthermore, the diameter difference between adjacent steps is the same. Here, the diameter d7 of the first step 111 is 60~75mm, the diameter d7 of the second step 112 is 100~115mm, the diameter d7 of the third step 113 is 140~155mm, the fourth step The diameter d7 of 114 is 180 to 195 mm, the diameter d7 of the fifth step 115 is 220 to 235 mm, and the diameter difference between adjacent steps is 40 mm.

Through the first surface 11, it is a stepped structure gradually rising from the center of the diffuser 1 to the circumference, combined with the straight hole 21 to connect the outwardly expanding horn hole 22, and the horn hole 22 is located on the same plane. The gas frame is enclosed in the plurality of gas through holes 2 to prevent the gas from being prematurely diffused and drawn away due to insufficient concentration during the pumping process, and solves the problem of insufficient gas atmosphere near the center of the diffuser 1. And it can slow down the downward flow of the gas to make it squeeze inward, to compensate for the slower intermediate flow rate, to increase the gas density and form the effect of a gas curtain, thereby increasing the flow rate of the gas through holes 2 close to the center of the diffuser 1 .

Refer to FIG. 8, which is a cross-sectional flow rate diagram of the deposition processing apparatus of the second preferred embodiment. The unit of the figure in the figure is the gas flow rate (m/s). It can be seen from the gas simulation diagram that the plurality of gas through holes The hole-shaped cross-sectional structure of 2 is a combination of the straight hole 21 and the horn hole 22, and the gas is evenly distributed, so as to improve the uniformity of the gas coating.

To sum up, the new type of deposition processing device uses the diffuser 1 and the plurality of gas through holes 2 to be mutually arranged, and the first surface 11 is a stepped shape gradually rising from the center of the diffuser 1 to the circumference through the first surface 11 Structure, combined with the design of the straight hole 21 connecting the outwardly expanding horn hole 22, and the horn hole 22 is located on the same plane, the gas frame is enclosed in the plurality of gas through holes 2, and the gas density is increased to form an air curtain The effect of this is to increase the flow rate of the gas through hole 2 close to the center of the diffuser 1 to achieve the effect of uniform gas coating. In addition, through the concentric ring design of the gas guide ring 4 and the gas extraction ring 5, concentricity is achieved The circular effect, combined with the suction pipe 6 located on the suction ring 5, avoids the problem of eccentricity due to poor side suction uniformity, so it can indeed achieve the purpose of new cost.

However, the above are only the preferred embodiments of the present model, and should not be used to limit the scope of implementation of the present model, that is, simple equivalent changes and modifications made in accordance with the scope of the patent application for the present model and the description of the new model, All are still within the scope of this new patent.

3: Masking group

31: Shading plate

32: airway

4: Air guide ring

5: Exhaust ring

6: Exhaust pipe

Claims (11)

A deposition processing device, comprising: a diffusion disk, including a first surface, and a second surface opposite to the first surface, the first surface being a stepped structure gradually rising from the center of the diffusion disk to the circumference , And the second surface is a plane structure; a plurality of gas through holes arranged through the diffuser plate; a shielding group, including a shielding plate arranged on the diffuser plate, and an air duct arranged on the shielding plate; An air guide ring is arranged on the periphery of the diffuser, and includes a body and a plurality of air guide holes opened on the body; an air suction ring is arranged on the periphery of the air guide ring, and includes a surrounding and defining a gas space In the seat body, each air guiding hole is connected to the gas space; and an air suction pipe connected with the air suction ring, a gas enters the gas space through the plurality of air guiding holes, and then is drawn out from the air suction pipe. The deposition processing apparatus according to claim 1, wherein the air guide ring and the air pumping ring are arranged in concentric rings of different sizes. The deposition processing apparatus according to claim 2, wherein the first surface has a first step, a second step surrounding the first step, and a third step surrounding the second step Part, a fourth ladder part arranged around the third ladder part, and a fifth ladder part arranged around the fourth ladder part, and the first ladder part is arranged close to the center of the diffuser, and the fifth ladder part The part is arranged close to the circumference of the diffuser. The deposition processing apparatus according to claim 3, wherein the hole-shaped cross-sectional structure of the plurality of gas through holes is a straight hole, and the diameter of the straight hole is 0.1-10 mm. The deposition processing apparatus according to claim 4, wherein the height difference between adjacent steps is the same. The deposition processing apparatus according to claim 2, wherein the hole-shaped cross-sectional structure of the plurality of gas through holes is a straight hole connected to an outwardly expanding horn hole, and the outwardly expanding horn hole structure is close to the second surface. The deposition processing device according to claim 6, wherein the diameter of the straight hole is 0.1-10 mm, and the diameter of the horn hole is 1.5-5 mm. The deposition processing device according to claim 7, wherein the height of the horn hole is 1 to 5 mm, and the inclination angle of the outward expansion of the horn hole is 30° to 90°. The deposition processing device according to claim 3, wherein the height difference between the first step and the second step is 1 to 5 mm, and the height difference between the second step and the third step is 0.5 to 3 mm , The height difference between the third step and the fourth step is 0.5-3mm, and the height difference between the fourth step and the fifth step is 0.5-3mm. The deposition processing apparatus according to claim 9, wherein the diameter difference between adjacent steps is the same. The deposition processing device according to claim 1, wherein the arrangement density of the gas through holes on the diffusion disk is 6-10 per square centimeter.

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