TWM608362U - Gas diffuser suitable for chemical vapor deposition - Google Patents

Abstract

A gas diffusion device suitable for chemical vapor deposition includes a diffusion disk and a plurality of gas through holes. The diffuser includes a first surface and a second surface opposite to the first surface. The first surface is a stepped structure gradually rising from the center of the diffuser to the circumference, and the second surface is a Plane structure, the plurality of gas through holes are arranged through the diffuser, and the hole cross-sectional structure of the plurality of gas through holes is a straight hole connected to an outwardly expanding horn hole, and the outwardly expanding horn hole structure is close to the second surface, The gas frame can be enclosed in the plurality of gas through holes to increase the gas density and form the effect of a gas curtain, thereby increasing the flow rate of the gas through holes close to the center of the diffuser plate to achieve the effect of uniform gas coating.

Description

Gas diffusion device suitable for chemical vapor deposition

This model relates to a gas diffusion device, in particular to a gas diffusion device suitable for chemical vapor deposition.

High-temperature chemical vapor deposition (CVD) processes are widely used in the semiconductor industry. The yield and quality of the substrate coating process depends on the substrate film deposition uniformity, and the film thickness uniformity is affected by the coating reaction gas spreading in the reaction chamber. Among them, the chemical vapor deposition equipment is equipped with a gas diffusion plate. The diffusion plate is located in the reaction chamber for dispersing the coating reaction gas flow so that the coating gas is evenly dispersed in the reaction chamber to settle to the substrate to be coated to achieve uniform coating.

Taiwan Invention Patent No. I283437 is a "gas distribution nozzle", which refers to a gas distribution nozzle used in semiconductor processing, which is characterized by a panel with a slender groove or channel type gas outlet. The nozzle is relatively close to the wafer to increase the processing air flow near the edge of the wafer. The edge of the panel is relatively concave relative to the center of the panel. However, the increased mass flow at the edge of the wafer may increase The edge thickness of the deposited material results in a thinner film thickness in the middle position, which affects the uniformity of the coating. Furthermore, the conventional gas distribution panel has a concave non-planar structure in which the edge of the panel is concave with respect to the center of the panel, which results in poor accuracy and processing difficulties, and needs to be improved.

The above-mentioned shortcomings all show the various problems derived from the conventional substrate film. Accordingly, in order to increase the degree of gas dispersion in the reaction chamber of the chemical vapor deposition equipment, increase the uniformity of the film thickness, and improve the yield and quality of the coating process, the foregoing conventional knowledge The gas diffusion plate really needs to be improved.

In view of this, the purpose of the present invention is to provide a gas diffusion device suitable for chemical vapor deposition, which includes a diffusion disk and a plurality of gas through holes.

The diffuser includes a first surface and a second surface opposite to the first surface. The first surface is a stepped structure gradually rising from the center of the diffuser to the circumference, and the second surface is a In a planar structure, the plurality of gas through holes are arranged through the diffuser.

Preferably, the first surface has a first step, a second step surrounding the first step, a third step surrounding the second step, and a surrounding third step A fourth step is provided, and a fifth step is provided around the fourth step, and the first step is located close to the center of the diffuser, and the fifth step is located close to the circumference of the diffuser.

Preferably, the hole-shaped cross-sectional structure of the plurality of gas through holes is a straight hole, and the diameter of the straight hole is 0.1-10 mm.

Preferably, the height difference between adjacent steps is the same.

Preferably, the hole-shaped cross-sectional structure of the plurality of gas through holes is a straight hole connected to an outwardly expanding horn hole, and the outwardly expanding horn hole structure is close to the second surface.

Preferably, the diameter of the straight hole is 0.1-10 mm, and the diameter of the horn hole is 1.5-5 mm.

Preferably, the height of the horn hole is 1 to 5 mm, and the inclination angle of the outward expansion of the horn hole is 30° to 90°.

Preferably, the height difference between the first step and the second step is 1 to 5 mm, the height difference between the second step and the third step is 0.5 to 3 mm, and the third step and the first step are 0.5 to 3 mm. The height difference between the four steps is 0.5-3mm, and the height difference between the fourth step and the fifth step is 0.5-3mm.

Preferably, the diameter difference between adjacent steps is the same.

Preferably, the arrangement density of the gas through holes on the diffusion disk is 6-10 per square centimeter.

The beneficial effect of the present invention lies in the fact that the first surface is a stepped structure gradually rising from the center of the diffuser to the circumference, combined with the design of the straight hole connected to the outwardly expanding horn hole, and the horn hole is located on the same plane Above, the gas is enclosed in the plurality of gas through holes to prevent the gas from diffusing and being drawn away early due to insufficient concentration during the pumping process, solving the problem of insufficient gas atmosphere near the center of the diffuser, and reducing the gas The downward flow speed makes it squeeze inward to make up for the slower flow rate in the middle, and increase the gas density and form the effect of a gas curtain, thereby increasing the flow rate of the gas through holes near the center of the diffuser to achieve uniform gas coating The effect.

The characteristics and technical content of the patent application related to the present model will be clearly presented in the following detailed description of the preferred embodiment with reference to the drawings.

Refer to FIGS. 1, 2, and 3, which are the first preferred embodiment of the new type of gas diffusion device suitable for chemical vapor deposition, which includes a diffusion disk 1 and a plurality of gas through holes 2. This new model can be used for 8-inch and 12-inch wafers.

The diffuser 1 includes a first surface 11 and a second surface 12 opposite to the first surface 11. The first surface 11 is a stepped structure gradually rising from the center of the diffuser 1 to the circumference, and The second surface 12 is a plane structure.

Wherein, the first surface 11 has a first step portion 111, a second step portion 112 disposed around the first step portion 111, a third step portion 113 disposed around the second step portion 112, and a third step portion 113 disposed around the second step portion 112. The fourth step 114 is provided by the third step 113, and a fifth step 115 is provided around the fourth step 114, and the first step 111 is located close to the center of the diffuser 1, and the fifth step The step 115 is arranged close to the circumference of the diffuser 1.

Here, the height difference between adjacent steps is the same. Further, the height difference d1 between the first step portion 111 and the second step portion 112 is 1 to 5 mm, the height difference d1 between the second step portion 112 and the third step portion 113 is 1 to 5 mm, and the third step The height difference d1 between the step 113 and the fourth step 114 is 1 to 5 mm, and the height difference d1 between the fourth step 114 and the fifth step 115 is 1 to 5 mm.

The plurality of gas through holes 2 are arranged through the diffuser plate 1, and the density of the gas through holes 2 on the diffuser plate 1 is 6-10 per square centimeter. Here, the density of the gas through holes 2 is about 32 holes per square centimeter. 5.32cm ² . Gas enters from the first surface 11 and flows outward from the second surface 12. In actual implementation, a shielding plate (not shown in the figure) is arranged above the diffuser plate 1, and the shielding plate is provided with a plurality of openings, and gas flows to the plurality of gas through holes 2 through the openings of the shielding plate.

In the first preferred embodiment, the hole cross-sectional structure of the plurality of gas through holes 2 is a straight hole 21, and the diameter d2 of the straight hole 21 is 0.1~10 mm, and the diameter of the adjacent straight hole 21 The spacing of the aperture d2 is 3~10mm. The straight hole 21 located on the first step portion 111 is the shortest, and the straight hole 21 located on the fifth step portion 115 is the longest.

Refer to Figures 4 and 5, which are the second preferred embodiment of the new model, which is roughly the same as the first preferred embodiment, and the same will not be repeated here. The difference lies in the hole pattern of the plurality of gas through holes 2 The cross-sectional structure is that a straight hole 21 is connected to an outwardly expanding horn hole 22, and the outwardly expanding horn hole 22 is close to the second surface 12.

In actual implementation, the horn hole 22 is located on the second surface 12 of the planar structure, which has the effect of simple processing and improved accuracy.

Here, the diameter d2 of the straight hole 21 is 0.1-10 mm, and the diameter d3 of the horn hole 21 is 1.5-5 mm. The height d4 of the horn hole 21 is 1 to 5 mm, and the inclination angle d5 of the horn 21 hole expanding outward is 30° to 90°.

The straight holes 21 arranged on the first step 111 close to the center of the diffuser 1 have a shorter flow rate than the straight holes 21 on the fifth step 115 close to the circumference of the diffuser 1, and can be faster To reach the substrate to be coated.

Wherein, the height difference d6 between the first step portion 111 and the second step portion 112 is 1~5mm, the height difference d6 between the second step portion 112 and the third step portion 113 is 0.5~3mm, the third step The height difference d6 between the portion 113 and the fourth step 114 is 0.5 to 3 mm, and the height difference d6 between the fourth step 114 and the fifth step 115 is 0.5 to 3 mm.

Furthermore, the diameter difference between adjacent steps is the same. Here, the diameter d7 of the first step 111 is 60~75mm, the diameter d7 of the second step 112 is 100~115mm, the diameter d7 of the third step 113 is 140~155mm, the fourth step The diameter d7 of 114 is 180 to 195 mm, the diameter d7 of the fifth step 115 is 220 to 235 mm, and the diameter difference between adjacent steps is 40 mm.

Through the first surface 11, it is a stepped structure gradually rising from the center of the diffuser 1 to the circumference, and the straight hole 21 is designed to connect the horn hole 22 that expands outward, and the horn hole 22 is on the same plane. The gas frame is enclosed in the plurality of gas through holes 2 to prevent the gas from being prematurely diffused and drawn away due to insufficient concentration during the pumping process, so as to solve the problem of insufficient gas atmosphere near the center of the diffuser 1. And it can slow down the downward flow of the gas to make it squeeze inward, to make up for the slower flow rate in the middle, to increase the gas density and form the effect of the air curtain, thereby increasing the flow rate of the gas through holes 2 close to the center of the diffuser 1 .

Refer to FIG. 6, which is a cross-sectional flow rate diagram of the gas diffusion device of the second preferred embodiment. The unit of the figure in the figure is the gas flow rate (m/s). It can be seen from the gas simulation diagram that by the plurality of gas through holes The hole-shaped cross-sectional structure of 2 is a combination of the straight hole 21 and the horn hole 22, and the gas is evenly distributed, so as to improve the uniformity of the gas coating.

In summary, the present invention is suitable for a gas diffusion device for chemical vapor deposition. The diffusion disk 1 and the plurality of gas through holes 2 are mutually arranged, and the first surface 11 is from the center of the diffusion disk 1 A stepped structure with a gradually increasing circumference, combined with the design of the straight hole 21 connecting the outwardly expanding horn hole 22, and the horn hole 22 is located on the same plane, encloses the gas frame in the plurality of gas through holes 2 and makes The gas density increases and forms the effect of the air curtain, thereby increasing the flow rate of the gas through holes 2 close to the center of the diffuser 1 to achieve the effect of uniform gas coating, so it can indeed achieve the purpose of new cost.

However, the above are only the preferred embodiments of the present model, and should not be used to limit the scope of implementation of the present model, that is, simple equivalent changes and modifications made in accordance with the scope of the patent application for the present model and the description of the model, All are still within the scope of this new patent.

1: diffuser 11: The first surface 111: The first ladder 112: second ladder 113: The third ladder 114: fourth ladder 115: Fifth Ladder 12: second surface 2: Gas through hole 21: Straight hole 22: Horn hole d1: height difference d2: Aperture d3: Aperture d4: height d5: angle d6: height difference d7: diameter

Figure 1 is a three-dimensional schematic diagram illustrating the first preferred embodiment of the new gas diffusion device suitable for chemical vapor deposition; Figure 2 is a schematic top view illustrating another view of the first preferred embodiment; Figure 3 is a cross-sectional view taken along line A-A of Figure 2; 4 is a schematic top view illustrating the second preferred embodiment of the new gas diffusion device suitable for chemical vapor deposition; Figure 5 is a C-C cross-sectional view of Figure 4; and 6 is a schematic diagram illustrating the cross-sectional flow velocity distribution of gas in a diffusion disk in the second preferred embodiment.

1: diffuser

111: The first ladder

112: second ladder

113: The third ladder

114: fourth ladder

115: Fifth Ladder

12: second surface

2: Gas through hole

21: Straight hole

22: Horn hole

d2: Aperture

d3: Aperture

d4: height

d5: angle

d6: height difference

Claims (10)

A gas diffusion device suitable for chemical vapor deposition, including: A diffuser includes a first surface and a second surface opposite to the first surface. The first surface is a stepped structure gradually rising from the center of the diffuser to the circumference, and the second surface is A plane structure; and A plurality of gas through holes are provided through the diffuser plate. The gas diffusion device suitable for chemical vapor deposition according to claim 1, wherein the first surface has a first step, a second step arranged around the first step, and a second step around the second step. The third step of the step, a fourth step of surrounding the third step, and a fifth step of surrounding the fourth step, and the first step is close to the center of the diffuser And the fifth step is located close to the circumference of the diffuser. The gas diffusion device suitable for chemical vapor deposition according to claim 2, wherein the hole-shaped cross-sectional structure of the plurality of gas through holes is a straight hole, and the diameter of the straight hole is 0.1-10 mm. The gas diffusion device suitable for chemical vapor deposition according to claim 3, wherein the height difference between adjacent steps is the same. The gas diffusion device suitable for chemical vapor deposition according to claim 2, wherein the hole-shaped cross-sectional structure of the plurality of gas through holes is a straight hole connected to an outwardly expanding horn hole, and an outwardly expanding horn hole structure Close to the second surface. The gas diffusion device suitable for chemical vapor deposition according to claim 5, wherein the diameter of the straight hole is 0.1-10 mm, and the diameter of the horn hole is 1.5-5 mm. The gas diffusion device suitable for chemical vapor deposition according to claim 6, wherein the height of the horn hole is 1 to 5 mm, and the inclination angle of the outward expansion of the horn hole is 30° to 90°. The gas diffusion device suitable for chemical vapor deposition according to claim 7, wherein the height difference between the first step and the second step is 1~5mm, and the second step and the third step The height difference is 0.5-3mm, the height difference between the third step and the fourth step is 0.5-3mm, and the height difference between the fourth step and the fifth step is 0.5-3mm. The gas diffusion device suitable for chemical vapor deposition according to claim 8, wherein the diameter difference between adjacent steps is the same. The gas diffusion device suitable for chemical vapor deposition according to claim 1, wherein the arrangement density of the gas through holes on the diffusion disk is 6-10 per square centimeter.

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