TW201321549A - A gas diffuser and a chemical vapor deposition system including the gas diffuser - Google Patents

Abstract

A gas diffuser and a chemical vapor deposition system including the gas diffuser are disclosed. The inside portion of the chemical vapor deposition system forms a chamber connected by a gas inlet and a gas outlet, with the gas diffuser installed into the chamber. The gas diffuser comprises: a base including a first district and a second district, with the first district aligning with the gas inlet of the chemical vapor deposition system and the second district connecting to the outer periphery of the first district; And a plurality of gas holes including first holes and second holes penetrating the base, wherein the first holes and the second holes are separately arranged in the first district and the second district of the base, with the minimum diameter of the second holes being longer than that of the first holes.

Description

Chemical vapor deposition device and gas diffusion device thereof

The present invention relates to a chemical vapor deposition apparatus and a gas diffusion apparatus thereof, and more particularly to a chemical vapor deposition apparatus and a gas diffusion apparatus which can uniformly distribute a gas in a chemical vapor deposition reaction chamber.

In industrial applications such as wafer semiconductor or solar cell coating processes, the coating gas is often input from a gas inlet end into a reaction chamber of a chemical vapor deposition apparatus, and the substrate coating is completed by chemical vapor deposition. The yield and quality of the coating process depend on the uniformity of the thickness of the substrate film, and the uniformity of the thickness of the film is deeply affected by the extent to which the reaction gas of the coating is dispersed in the reaction chamber. Therefore, the chemical vapor deposition device has a gas diffusion plate standing there. The gas diffusion plate is located in the reaction chamber and adjacent to the vent inlet end. The gas diffusion plate is configured to sufficiently disperse the gas flow of the coating reaction gas, so that the coating gas is evenly dispersed in the reaction chamber and settles to the substrate to be coated. To achieve the purpose of uniform coating.

Referring to FIG. 1 , the conventional gas diffusion plate 8 generally has a plurality of holes 81 of the same aperture, which are arranged in the same interval array in the conventional gas diffusion plate 8 for providing gas passage. For a large-area coating process, the chemical vapor deposition apparatus must be matched with the conventional gas diffusion plate 8 of a large size. When the coating gas is input from the gas inlet end, the pore 81 of the conventional gas diffusion plate 8 has the same pore diameter. And arranged at equal intervals, the gas flow rate through the hole 81 adjacent to the gas inlet end is greater than the gas flow rate through the hole 81 away from the gas inlet end, affecting the uniformity of the coating, and the larger the area of the conventional gas The diffusion plate 8 has a more serious gas dispersion unevenness. In addition, the holes 81 of the conventional gas diffusion plate 8 have a straight hole through the cross section, and if the pressure of the coating gas is not uniform, the pressure is relatively high. When the hole 81 allows more gas to pass through the hole 81 which is subjected to a smaller air pressure in the same time, it is easy to cause uneven distribution of gas permeation, which affects the effect of subsequent gas deposition coating.

Referring to FIG. 2, another conventional gas diffusion plate 9 has a plurality of first holes 91 and a second hole 92. The diameter of the first hole 91 is larger than the diameter of the second hole 92. The second hole 92 is disposed between the first hole 91 and the adjacent first hole 91, and the second hole 92 is also arranged at the same interval. The first hole 91 and the second hole 92, which are different in aperture, are distributed in the conventional gas diffusion plate 9, and the degree of uniformity of the coating gas is increased.

However, when the conventional gas diffusion plate 9 of a large area is produced, the number of holes to be pierced is large, and since the conventional gas diffusion plate 9 must be processed at a predetermined position to form a plurality of holes of different apertures, it is difficult to process and causes The manufacturing cost is high, which is unfavorable for production use; and the cross section of the first hole 91 and the second hole 92 of the conventional gas diffusion plate 9 is also a straight hole penetrating shape, and there is also a gas pressure of the gas diffusion plate 8 as described above. The loss caused by unevenness.

For the above reasons, in order to increase the degree of gas dispersion in the reaction chamber of a chemical vapor deposition apparatus, to improve film thickness uniformity, and to improve coating process yield and quality, the conventional gas diffusion plate does have an improvement.

The object of the present invention is to improve the above disadvantages to provide a chemical vapor deposition apparatus and a gas diffusion apparatus thereof, which can be uniformly dispersed in a chemical by pores of different pore sizes and their arrangement. The degree of vapor deposition in the reaction chamber.

A second object of the present invention is to provide a chemical vapor deposition apparatus and a gas diffusion device thereof, which can be arranged by arranging pores of different apertures to simplify the difficulty of drilling and reduce manufacturing. Cost, increase the efficiency of gas dispersion.

In order to achieve the foregoing object, the gas diffusion device of the chemical vapor deposition apparatus and the gas diffusion device thereof comprises: a substrate comprising a first partition and a second partition, wherein the first partition is located opposite to a process gas inlet end of a chemical vapor deposition apparatus, the second partition adjacent to a periphery of the first partition; and a plurality of gas through holes including a plurality of first through holes and a plurality of second through holes extending through the substrate The first through hole and the second through hole are respectively disposed in the first partition and the second partition of the substrate, and a minimum aperture of the second through hole is greater than a minimum aperture of the first through hole.

The chemical vapor deposition gas diffusion device of the present invention, wherein the substrate is provided with a third partition adjacent to the periphery of the second partition, the gas through hole includes a plurality of third through holes penetrating the substrate, the number third The through holes are evenly distributed in the third partition, and the minimum aperture of the third through hole is larger than the minimum aperture of the second through hole.

In the chemical vapor deposition gas diffusion device of the present invention, the gas via hole cross-sectional structure is a stepped hole structure.

In the chemical vapor deposition gas diffusion device of the present invention, the gas through-hole pore-shaped cross-sectional structure is a through-hole structure.

In the chemical vapor deposition gas diffusion device of the present invention, the first partition is disposed at a center of the substrate.

The chemical vapor deposition apparatus of the present invention internally forms a reaction chamber in which the gas diffusion device is disposed, and the chemical vapor deposition apparatus is provided with a process gas inlet end communicating with the reaction chamber and An exhaust end, wherein the chemical vapor deposition gas diffusion device and the process gas inlet end form a buffer chamber.

The above and other objects, features and advantages of the present invention will become more <RTIgt; In a preferred embodiment of the present invention, the chemical vapor deposition gas diffusion device is mainly composed of a substrate 1 and a plurality of gas through holes 2. The gas through holes 2 are formed through the substrate 1 for gas permeation.

The substrate 1 may be a plate or a disk made of a metal material such as stainless steel, aluminum or titanium. The substrate 1 includes a first partition 11 and a second partition 12, and the first partition 11 is defined. For the process gas inlet end of the chemical vapor deposition apparatus, according to the position of the process gas inlet end, the first partition 11 may be disposed at any position in the center, the edge, and the like of the circumferential surface of the substrate 1. A partition 11 may be a square, a circle, or the like surrounded by various geometric shapes. The second partition 12 is adjacent to the outer periphery of the first partition 11. The substrate 1 may further be provided with a third partition 13 adjacent to the second partition. A periphery of 12; a fourth partition 14 adjoins the periphery of the third partition 13; ‧‧, and so on, the partition that is later placed adjacent to the outer perimeter of the previously located partition. In the embodiment of the present invention, the first partition 11 is arranged in a square area in the center of the substrate 1 and is sequentially outwardly defined by the second partition 12, the third partition 13 and the fourth partition from the center of the substrate 1. 14 is connected.

The gas through holes 2 may be a through hole type cross-sectional structure (as shown in FIG. 4a), and the gas through holes 2 may also be a stepped hole type cross-sectional structure (as shown in FIG. 4b). In an embodiment of the invention, the gas through hole 2 is of a stepped hole type configuration. The gas through holes 2 include a plurality of first through holes 21 and a plurality of second through holes 22 penetrating the substrate 1. The first through holes 21 and the second through holes 22 are respectively disposed at the first of the substrate 1 The first aperture 21 and the second aperture 22 have a minimum aperture smaller than the minimum aperture of the first through hole 21, and in the embodiment, the first through hole 21 and the second through hole 22 are respectively Uniformly disposed on the first partition 11 and the second partition 12 of the substrate 1, but not limited thereto, the gas through holes 2 may further be provided with a plurality of third through holes 23 extending through the third of the substrate 1 a partition 13 , wherein a minimum aperture of the third through hole 23 is greater than a minimum aperture of the second through hole 22 ; a plurality of fourth through holes 24 are evenly distributed in the fourth partition 14 of the substrate 1 , and the fourth through hole 24 The minimum aperture is larger than the minimum aperture of the third through hole 23; ‧‧, and so on, the specific gas through hole 2 is correspondingly disposed in a specific section of the substrate 1, thereby overcoming the process gas from the gas inlet end The difference in micro-pressure generated during input causes the loss of gas flux unevenness in the chemical vapor deposition gas diffusion device, and the work of uniformly dispersing the gas is achieved. effect.

Referring to Figures 3 and 5, the principle of the substrate 1 of the chemical vapor deposition gas diffusion device of the present invention is based on the assumption that the area of each partition is the same, and the different zones are preferably passed through the same amount of gas at the same time. In order to increase the degree of gas permeability uniformity, the area division of each partition of the substrate 1 and the minimum aperture of the gas through holes 2 of the respective partitions are preferably matched. In the embodiment of the present invention, the first partition 11 occupies 40 to 60% of the total area ratio of the substrate 1 and the minimum aperture of the first through hole 21 is 0.3 to 0.45 mm. The second partition 12 occupies 15-20% of the total area ratio of the substrate 1, and the minimum aperture of the second through hole 22 is 0.5-0.6 mm; the third partition 13 accounts for 15-20% of the total area of the substrate 1. And the minimum aperture of the third through hole 23 is 0.7-0.75 mm; the fourth partition 14 is an area area of the substrate 1 minus the first partition 11, the second partition 12, and the third partition 13, and the The minimum aperture of the four through holes 24 is 0.8 mm.

Referring to FIG. 6, the chemical vapor deposition gas diffusion device of the present invention is applied to a chemical vapor deposition device 3, and the internal space of the chemical vapor deposition device 3 is a reaction chamber 31, the chemical gas. The upper end of the phase deposition apparatus 3 is provided with a process gas inlet end 32 (shown in the figure) for introducing a process gas into the reaction chamber 31, and the substrate 1 of the chemical vapor deposition gas diffusion device is disposed at the substrate In the reaction chamber 31, the substrate 1 can serve as an upper electrode of the chemical vapor deposition apparatus 3, and a buffer chamber 33 is formed between the substrate 1 and the process gas inlet end 32 for distributing process gas. The bottom of the reaction chamber 31 may be provided with a substrate 34. The lower end of the chemical vapor deposition apparatus 3 is provided with an exhaust end 35 (shown in the drawing) for exhaust gas to flow out of the reaction chamber 31.

Please refer to FIG. 6 again, which is a case where the chemical vapor deposition gas diffusion device of the present invention is used in a chemical vapor deposition device 3, and the substrate 1 of the chemical vapor deposition gas diffusion device is accommodated in the device. In the reaction chamber 31 of the third embodiment, the substrate 1 is located near one side of the process gas inlet end 32 of the device 3, and a buffer chamber 33 is formed between the substrate 1 and the process gas inlet end 32. When performing chemical vapor deposition, the desired reaction gas is introduced from the process gas inlet end 32, and diffused into the buffer chamber 33 and through the gas passage holes 2 of the substrate 1 to enter the reaction. In the chamber 31, for example, the first through hole 21, the second through hole 22, and the third through hole 23 and the fourth through hole 24 of the embodiment of the present invention are according to the chemical vapor deposition gas diffusion device of the present invention. The gas through hole 2 is spaced apart from the gas inlet end 32 to partition the gas through hole 2 having different pore diameters, and has a stepped hole type cross-sectional structure due to a pressure difference of diffusion when the gas is introduced, so that the gas is more uniform Dispersion flows into the reaction chamber 31 through the reaction chamber 31 Plasma potential difference and effect, and can be plated on the substrate 34 forming the exhaust gas after the last reaction process is discharged via the discharge end 35.

The chemical vapor deposition apparatus of the present invention and the gas diffusion device thereof are arranged on the chemical vapor deposition gas diffusion device to divide the plurality of regions and the respective regions to respectively set the pores of the specific aperture, and the pore diameters of the pores are expanded by the region. The effect of increasing the uniformity of gas dispersion in the chemical vapor deposition reaction chamber.

The chemical vapor deposition apparatus and the gas diffusion device thereof of the present invention, the chemical vapor deposition gas diffusion device expands by the aperture of the gas through holes, reduces the number of holes to be drilled, simplifies the drilling difficulty, and reduces the manufacturing cost. Increase the efficiency of gas dispersion.

While the invention has been described in connection with the preferred embodiments described above, it is not intended to limit the scope of the invention. The technical scope of the invention is protected, and therefore the scope of the invention is defined by the scope of the appended claims.

[this invention]

1. . . Substrate

11. . . First partition

12. . . Second partition

13. . . Third partition

14. . . Fourth partition

2. . . Gas through hole

twenty one. . . First through hole

twenty two. . . Second through hole

twenty three. . . Third through hole

twenty four. . . Fourth through hole

3. . . Chemical vapor deposition equipment

31. . . Reaction chamber

32. . . Process gas inlet

33. . . Buffer chamber

34. . . Substrate

35. . . Exhaust end

[知知]

8. . . Conventional gas diffusion plate

81. . . Hole

9. . . Conventional gas diffusion plate

91. . . First hole

92. . . Second hole

Figure 1: A top view of a conventional gas diffusion plate.

Figure 2: A top view of another gas diffusion plate.

Figure 3 is a plan view of a preferred embodiment of the invention.

Fig. 4a is a cross-sectional view showing the gas through hole of the embodiment of the present invention as a through hole.

Fig. 4b is a cross-sectional view showing the gas through hole of the embodiment of the present invention as a stepped hole.

Fig. 5 is a cross-sectional view taken along line 5-5 of the chemical vapor deposition gas diffusion device shown in Fig. 3.

Figure 6 is a schematic view showing a chemical vapor deposition gas diffusion device of the present invention disposed in a chemical vapor deposition apparatus.

1. . . Substrate

11. . . First partition

12. . . Second partition

13. . . Third partition

14. . . Fourth partition

2. . . Gas through hole

twenty one. . . First through hole

twenty two. . . Second through hole

twenty three. . . Third through hole

twenty four. . . Fourth through hole

Claims (10)

A chemical vapor deposition gas diffusion device comprises: a substrate comprising a first partition and a second partition, wherein the first partition is used for a process gas inlet end of a chemical vapor deposition apparatus, the first The second partition is adjacent to the periphery of the first partition; and the plurality of gas through holes includes a plurality of first through holes and a plurality of second through holes penetrating the substrate, and the number of the first through holes and the second plurality of through holes are respectively disposed at a first partition and a second partition of the substrate, and a minimum aperture of the second via is greater than a minimum aperture of the first via. The chemical vapor deposition gas diffusion device according to claim 1, wherein the substrate is provided with a third partition adjacent to a periphery of the second partition, and the gas through hole includes a third number penetrating the substrate. The through hole, the third through hole is evenly distributed in the third partition, and the minimum aperture of the third through hole is larger than the minimum aperture of the second through hole. The chemical vapor deposition gas diffusion device according to claim 1 or 2, wherein the gas through-hole cross-sectional structure is a stepped hole structure. The chemical vapor deposition gas diffusion device according to claim 1 or 2, wherein the gas through-hole cross-sectional structure is a through-hole structure. The chemical vapor deposition gas diffusion device according to claim 1 or 2, wherein the first partition is disposed at a center of the substrate. A chemical vapor deposition apparatus is formed inside a reaction chamber, wherein the chemical vapor deposition gas diffusion device according to claim 1 is disposed in the reaction chamber, and the chemical vapor deposition device is provided with the connection A process gas inlet end and a discharge end of the reaction chamber, wherein the chemical vapor deposition gas diffusion device and the process gas inlet end form a buffer chamber. The chemical vapor deposition apparatus of claim 6, wherein the substrate of the chemical vapor deposition gas diffusion device is provided with a third partition adjacent to a periphery of the second partition, the gas through hole system including a third through hole of the substrate, the third through hole is evenly distributed in the third partition, and a minimum aperture of the third through hole is larger than a minimum aperture of the second through hole. The chemical vapor deposition apparatus according to claim 6 or 7, wherein the gas through hole type cross-sectional structure of the chemical vapor deposition gas diffusion device is a stepped hole structure. The chemical vapor deposition apparatus according to claim 6 or 7, wherein the gas through-hole cross-sectional structure of the chemical vapor deposition gas diffusion device is a through-hole structure. The chemical vapor deposition apparatus of claim 6 or 7, wherein the first partition of the chemical vapor deposition gas diffusion device is disposed at a center of the substrate.