TWI721514B - Vapor phase film deposition apparatus for semiconductor processes - Google Patents

Abstract

A vapor phase film deposition apparatus is used for semiconductor processes. The apparatus comprises a gas injector, a susceptor, and an opposing face member disposed opposing to the susceptor. The gas injector jets a plurality of gases into between the susceptor and the opposing face member. The side adjacent to the gas injector is an upstream side, and the side far from gas injector is a downstream side. The distance between the susceptor and the opposing face member gradually increases from the upstream side or a place between the susceptor and the opposing face member toward the downstream side.

Description

Vapor phase film forming device for semiconductor manufacturing process

The present invention relates to a vapor deposition apparatus for forming a thin film on a semiconductor substrate, and in detail, it relates to a vapor deposition thin film equipment used in a semiconductor manufacturing process.

In the process of forming a thin film on a semiconductor substrate, the reaction chamber of the film forming device containing the substrate uses a gas injector to spray the gas supplied by the gas source horizontally (or vertically) to the top of the substrate on the susceptor for mixing, and then reuse A physical or chemical reaction caused by heating to deposit a thin film on a substrate (for example, a wafer). The design of the gas injector must make the gas source gas spray horizontally from the surface of the rotating substrate to facilitate the deposition of the thin film.

Figure 1 is a schematic cross-sectional view of a reaction chamber of a conventional self-revolution-type film forming apparatus. A film forming apparatus includes a reaction chamber 10 for producing a vapor-deposited film, and a closed chamber close to a vacuum is enclosed by the chamber wall 11. A carrier tray 12 provided with a plurality of substrate holding members 121 is provided in the cavity, and the substrate holding member 121 is used to carry a substrate W. Opposite the carrier plate 12 is a pair of facing surface forming members 13, and a gas ejector 14 is formed between the two. The gas injector 14 includes a first injection member 141, a second injection member 142, and gas cross-sectional flow passages 143-145. By the substrate holding member 12, the first spraying member 141, the second spraying member 142, and the facing surface forming member 13 adjacent to each other, three independent gas flow channels 143 to 145 are sequentially formed, which are generally used for introducing And transport the gas used in the process, such as: H ₂ /N ₂ /V group raw material gas, mixing of group III raw material gas and carrier gas, and H ₂ /N ₂ /V group raw material gas, and spray it horizontally It is mixed on the substrate W, and then the physical or chemical reaction caused by heating is used to deposit a thin film on the wafer W.

FIG. 2 is a graph showing the film formation rate versus the deposition position presented by the conventional film formation device in FIG. 1. In the figure, the horizontal axis is from the central axis of the carrier plate 12 along the radius direction to the circumference, where the surface of the substrate W passing through, that is, 200mm~300mm on the horizontal axis is covered by the diameter of the substrate W. The vertical axis represents the film formation rate (μm/hr). The starting position of the film formation reaction is approximately equivalent to the interface where the raw material gas is introduced from the gas injector 14 into the reaction chamber 10, that is, the outlet end of the gas flow passages 143 to 145 (that is, the upstream end, otherwise the other end far away is the downstream End). As shown by the curve in the figure, the film formation rate will rise rapidly from the position of the exit end, and will begin to decrease after reaching the maximum value (a position with a radius of about 190mm). The curve of film formation rate vs. deposition position began to change from the slope of about 230mm, and it was found that the film formation rate dropped sharply. At this time, even if the substrate is rotated, the film thickness of the edge part is still thinner than the center part, so a good film thickness distribution cannot be obtained. The reason why the inclination changes on the way can be said to be due to the low molecular weight of the material molecules due to the chemical reaction in the gas phase, which causes the diffusion coefficient to increase. The influence of this increase in the diffusion coefficient appears at about 230mm, causing the film formation speed to drop rapidly.

The setting position of the substrate W is recommended to set the substrate W closest to the end point of the gas injector 14 at a short predetermined distance after the film forming rate curve starts to decrease from the maximum value. Since the film formation rate gradually decreases toward the downstream end, it can be seen that the film thicknesses deposited at two different fixed points in the radial direction will be different in a certain period of time. Therefore, the rotation movement of the substrate W can slow down the problem of uneven film thickness caused by the difference in film formation rate, so that a relatively uniform film thickness can be formed on the substrate W. However, regardless of whether the carrier plate 12 causes the substrate W to rotate or revolve, the change in the film formation rate curve is the most important factor in determining the uniformity of the film thickness.

In order to solve the problem of uneven film thickness, the Japanese Patent Application Publication No. JP2010232624 discloses a group III nitride semiconductor vapor growth device, as shown in FIG. 3. The distance between the carrier plate 31 and the opposite surface 32 of the vapor growth apparatus 30 gradually decreases from the center of the carrier plate 31 toward the downstream end, so that it is hoped that the unreacted raw material gas can be sufficiently supplied to a substrate W. The surface of the downstream end, thereby alleviating or eliminating the problem of crystal growth on the surface of the substrate near the downstream end or reduction of the film formation rate. In addition, Y. Ymashita and other authors also proposed the same concept of semiconductor reaction chamber in the Japanese journal Applied Physics, vol. 37 (1998), pp. 6301-6308.

Most of the similar conventional technologies are based on the boundary layer theory to discuss the factors affecting the film formation rate, and the film formation rate is inversely proportional to the thickness of the boundary layer. Furthermore, the thickness of the boundary layer is inversely proportional to the square root of the flow velocity, so the film formation rate is directly proportional to the square root of the fluid free velocity. In the reaction chamber with front revolution and rotation mechanism, the flow velocity becomes smaller as it approaches the downstream end. Therefore, those of ordinary knowledge in this field would intuitively wish to narrow the distance close to the downstream end, thereby increasing the flow velocity, that is, correspondingly increasing the film formation rate of the substrate surface close to the downstream end.

Although the above structural improvement seems to be based on the boundary layer theory in fluid mechanics, this theory is only approximately correct in very limited and special circumstances, and is incorrect for the devices actually used in recent years. The reasons are briefly described as follows: First, there is no direct relationship between the flow rate and the growth rate, but the real direct relationship is the concentration of gas materials in the flow channel. If the boundary layer mentioned in the foregoing theory is a concentration boundary layer instead of a velocity boundary layer, there is a certain degree of appropriateness. However, even if it is a concentration boundary layer, it cannot be defined with current devices. In order to achieve a good gas material efficiency in the current device, the material gas introduced from the flow channel will be directly consumed, and the gas concentration will drop rapidly. If there is a concentration boundary layer, it is necessary to maintain the initial concentration at the time of introduction from a certain distance above the substrate and the carrier plate, which is not the case with current devices. In the early devices that did not pay attention to material efficiency, it was possible to achieve a situation similar to the concentration boundary layer, but the current device is completely different in this point. Due to the above, the concept of applying the concentration boundary layer theory to the film thickness distribution is not correct. Therefore, the aforementioned The methods mentioned in the literature actually cannot effectively improve the problem of crystal growth or film formation rate reduction on the substrate surface near the downstream end.

In summary, there is an urgent need for a vapor-phase film-forming device that can improve the uniformity of the aforementioned film thickness in semiconductor manufacturing, so as to improve the quality of the deposited film.

This application provides a vapor-phase film formation device for forming a thin film on a semiconductor substrate, which improves the crystal growth or film formation rate reduction on the substrate surface near the downstream end by improving the distance between the gas flow channels in the reaction chamber. The problem.

This application provides a vapor deposition thin film equipment for semiconductor manufacturing process, which is mainly based on the influence of the main parameters obtained by the advection diffusion equation on the film formation rate to improve the distance between the gas flow channels in the reaction chamber. So as to achieve better uniformity of the deposited film thickness on the substrate surface.

Therefore, the present invention provides an embodiment of a film forming apparatus for semiconductor manufacturing process, comprising: a carrier plate for supporting at least one substrate; a pair of facing surface forming members arranged opposite to the carrier plate; and a gas The ejector is arranged in the center of the carrier plate and can eject a plurality of types of gases to the middle of the substrate holding structure and the facing surface forming member, wherein the one end close to the gas ejector is the upstream end, and the other end far away Is the downstream end; wherein the distance between the bearing plate and the facing surface forming member gradually increases from the upstream end or a turning point between the upstream end and the downstream end toward the downstream end.

In another embodiment, the turning point is within a range covered by the diameter of the substrate.

In another embodiment, the turning point is within the range covered by the diameter of the substrate and is closer to the upstream end.

In another embodiment, the periphery of the substrate closest to the gas injector is aligned The position corresponding to the maximum value of the curve of a film forming rate with respect to the distance in the radial direction of the carrier plate.

In another embodiment, the carrier plate allows the at least one substrate to revolve and rotate.

In another embodiment, the surface to be deposited on the at least one substrate faces a direction opposite to the direction of gravity.

In another embodiment, the surface to be deposited on the at least one substrate faces the same direction as the direction of gravity.

The present invention proposes another embodiment. The present invention proposes an embodiment of a film forming apparatus used in a semiconductor manufacturing process, comprising: a carrier plate for carrying at least one substrate; a pair of facing surface forming members connected to the carrier plate Oppositely arranged; and a gas injector, which is arranged in the center of the carrier plate, and can inject a plurality of kinds of gases to the middle of the substrate holding structure and the facing surface forming member, wherein one end close to the gas injector is the upstream end , And the other end farther away is the downstream end; wherein at least a part of the facing surface forming member presents an inclined surface relative to the carrying plate, and the distance between the carrying plate and the inclined surface gradually increases toward the downstream end.

In another embodiment, the facing surface forming member presents an inclined surface relative to the carrier plate as a whole.

In another embodiment, the facing surface forming member includes a horizontal plane parallel to the surface of the carrier plate, and the horizontal plane is adjacent to the upstream end.

In another embodiment, the intermediate line that the horizontal plane and the inclined plane meet is within a range covered by the diameter of the substrate.

In another embodiment, the intermediate line of the horizontal plane and the inclined plane is within the range covered by the diameter of the substrate and is closer to the upstream end.

In another embodiment, the periphery of the substrate closest to the gas injector is aligned The position corresponding to the maximum value of the curve of a film forming rate with respect to the distance in the radial direction of the carrier plate.

In another embodiment, the carrier plate allows the at least one substrate to revolve and rotate.

In another embodiment, the surface to be deposited on the at least one substrate faces a direction opposite to the direction of gravity.

In another embodiment, the surface to be deposited on the at least one substrate faces the same direction as the direction of gravity.

10, 30, 40, 50‧‧‧Reaction chamber

11‧‧‧cavity wall

12, 31, 42, 62, 72, 82‧‧‧Carrier plate

13, 43, 53, 63, 73, 83‧‧‧Opposite surface forming member

32‧‧‧Opposite

14, 44, 84‧‧‧Gas injector

45‧‧‧Gas exhaust

121、421‧‧‧Substrate holding member

422‧‧‧Heat plate

423‧‧‧Receiving Department

431‧‧‧Upper surface

531‧‧‧First upper surface

731‧‧‧Slope

532‧‧‧Second upper surface

141, 441, 841‧‧‧First injection member

142, 442, 842‧‧‧Second injection member

143~145、443~445、843~845‧‧‧Gas flow path

44a~44c‧‧‧Gas inlet

44d~44f‧‧‧Gas outlet

W‧‧‧Substrate

A‧‧‧point

Figure 1 is a schematic cross-sectional view of a reaction chamber of a conventional self-revolution-type film forming apparatus.

FIG. 2 is a graph showing the film formation rate versus the deposition position presented by the conventional film formation device in FIG. 1.

FIG. 3 is a schematic cross-sectional view showing a vapor growth device of a III-nitride semiconductor disclosed in Japanese Publication No. JP2010232624.

4 is a schematic cross-sectional view of a vapor-phase film forming apparatus according to an embodiment of the present application.

FIG. 5 is a schematic cross-sectional view of a vapor phase film forming apparatus according to another embodiment of the present application.

6 is a schematic cross-sectional view of a vapor-phase film forming apparatus according to another embodiment of the application.

FIG. 7 is a schematic cross-sectional view of a vapor phase film forming apparatus according to another embodiment of the present application.

FIG. 8 is a schematic cross-sectional view of the numerical calculation model of the diffusion and film formation rate of the vapor-phase film forming apparatus of the present application.

Fig. 9 shows the cylindrical coordinates used in the numerical calculation model of the diffusion and film forming rate of the vapor-phase film forming device of the present application.

FIG. 10 is a graph showing the film formation rate versus the deposition position obtained by the numerical calculation model of the embodiment of the present application and the conventional technology in FIG. 8 when the substrate is revolving.

FIG. 11 shows a graph of the film formation rate versus the deposition position obtained by the numerical calculation model of the embodiment of the present application and the conventional technology in FIG. 8 when the substrate has revolution and rotation.

Hereinafter, various embodiments for implementing the present invention will be described. Please refer to the attached drawing and refer to its corresponding description. In addition, in this specification and the drawings, substantially the same or the same configuration will be given the same reference numeral, and repeated description thereof will be omitted.

其中D為擴散係數(diffusion coefficient)，假設為常數；u(r,z)為流速，其係以圓柱座標中半徑r及軸高z表示；C為流道裏的濃度分佈，為r與z的函數。。 The basic principles of fluid mechanics involved in this application are explained as follows:

Where D is the diffusion coefficient, which is assumed to be constant; u ( r,z ) is the flow velocity, which is expressed by the radius r and the axis height z in the cylindrical coordinates; C is the concentration distribution in the flow channel, which is r and z The function. .

In a revolution and rotation type reactor or planetary type reactor, if some approximations are applied, the steady-state material concentration in the flow channel will follow the distribution pattern defined in Equation 1. . Because approximate values are used, the actual concentration distribution will be slightly different strictly. However, based on the above formula, the qualitative discussion did not consider the problem: the formula does not give a precise concentration distribution, but the growth parameters are sufficient to analyze the concentration distribution mode. The coordinate system is based on the cylindrical coordinate, and the circumferential direction (theta direction) is assumed to be uniform (see Figure 9), that is, the concentration distribution system at the same radius r is assumed to be the same value. The first term of the left formula represents the diffusion in the vertical direction, and the second term represents the so-called advection term, which sums to zero in the steady state. This equation is usually called the advection diffusion equation. In this equation Where D is the diffusion coefficient, u(r,z) is the flow rate function, and C is the concentration distribution relative to r and z.

In the case of a self-revolution type reactor, the flow rate u(r,z) can be further expressed as follows. This is an approximate analysis that can be applied to most flow channel regions, except for the vicinity of the ejector, where flow turbulence occurs.

A是由成膜的流速條件決定的常數，L是承載盤表面(susceptor surface)和相對表面(對向面；opposing face)之間的流道高度(flow channel height；FCH)。流道之上壁和下壁表面的流速為零，在流動通道之正中央具有最高流速，該流速係以拋物線曲線之圖案表現。

A is a constant determined by the flow rate condition of the film formation, and L is the flow channel height (FCH) between the susceptor surface and the opposite surface (opposing face). The flow velocity on the upper and lower wall surfaces of the flow channel is zero, and the highest flow velocity is in the center of the flow channel, and the flow velocity is expressed in a parabolic curve pattern.

Substituting u(r,z) of Equation 2 into Equation 1 can obtain Equation 3 as follows:

Taking into account the performance of Equation 3 related to the film formation parameters u, L, and D, and from the properties of the differential method, the following relationship can be derived:

1. When u multiplied by α becomes α times, the concentration distribution C(r,z) in the flow channel becomes a curved pattern extending in the direction of r by √α (square root of α) times; that is, C(r,z) )→1/α‧C(r/√α,z).

2. When L multiplied by α becomes α times, C(r,z) is a curve pattern extending √α times in the r direction and α times in the z direction; namely C(r,z)→1/ α‧C(r/√α,z/α).

3. When D multiplied by α becomes α times, C(r,z) is a curve pattern that decreases or compresses 1/√α times in the direction of r; that is, C(r,z)→1/α‧C (√α‧r,z).

In addition, when the Metal Organic Chemical-Vapor Deposition (MOCVD) process is generally performed under the mass transfer limited mode (Mass Transfer Limited Mode), the deposition rate function with r as the independent variable (deposition rate function) G (r) can be expressed as follows:

The right-hand formula of Equation 4 represents the concentration gradient along the vertical direction on the surface of the carrier plate multiplied by the diffusion coefficient. Combining this formula with the previous relationship, the following relationship can be obtained:

4. When u multiplied by α becomes α times, G(r) is a pattern extending √α times in the r direction according to the above relationship 1. That is, if the supply rate of the group III raw material gas is fixed, and only the flow rate F of the carrier gas is set to α times (of course u also becomes α times), the material concentration distribution in the flow channel becomes 1/α , And the concentration gradient becomes 1/α, so the film formation rate is changed to 1/α times as a whole. That is, if F is multiplied by α times, G(r) is stretched by √α times in the r direction, and the overall pattern of the film formation rate is changed to 1/α times.

5. When L multiplied by α becomes α times, G(r) is stretched √α times in the r direction according to the above relationship 2, and the absolute value of the deposition rate G(r) is obtained as 1/α times as a whole The pattern, that is, the curve of G(r) is compressed vertically by the reciprocal of a times. 1/α is because the concentration distribution stretches α times in the z direction, so its gradient is 1/α. It can be seen from the above that multiplying L by α times has exactly the same effect as multiplying F by α times.

6. When D multiplied by α becomes α times, the absolute value of G(r) as a whole is reduced according to the above relationship 3, that is, it is compressed by 1/√α times in the direction of r and changes. Therefore, D has the opposite effect on the F or L effect.

According to the above relationship, β can be defined here as follows:

From the above-defined value β, it can be seen that even if the changing conditions of F, L, and D are different, as long as the β value is the same, the same film formation rate distribution can be obtained. In addition, as β increases, G(r) becomes a pattern stretched in the r direction, so G(r) will have a gentle distribution.

uL將其代入上述定義數值β之式子中，可導出關係式如下：

Further, the relationship can be obtained as follows: F

uL substituting it into the above equation that defines the value β, the relationship can be derived as follows:

The second power of L appears because of the second differential derivative of z in Equation 1. Other conditions remain the same. When L is increased, the cross-sectional area of the fluid will increase accordingly, and u will be inversely proportional. Become smaller. If u becomes smaller, the slope of the G(r) curve will become larger. However, β comes from the quadratic ratio of L, and the effect of decreasing u only cancels out the one-time portion of L, while the effect of increasing the one-time portion of L is still there. Therefore, when L is only increased, the G(r) curve becomes gentle.

This application focuses more on the effect of L, and it is a problem that the gradient of the film formation rate in the downstream area becomes larger. If the L of the flow channel in the relevant part is increased, the change of the gradient can be made more gentle. As a result, a good film thickness distribution can be obtained.

Although the above description is related to self-revolution and revolution reactors, the qualitative conclusions are exactly the same, so it is also applicable to horizontal reactors, where only the relationship between √α times is changed to α, and the above theory is applicable to self-revolution and revolution Reactor and horizontal reactor.

4 is a schematic cross-sectional view of a vapor-phase film forming apparatus according to an embodiment of the present application. As shown in the figure, a reaction chamber 40 is an example of a III/V group compound semiconductor or III/V group nitrogen compound semiconductor film forming apparatus. The reaction chamber 40 includes a susceptor 42, a facing surface forming member 43 opposite to the susceptor 42, a gas injector 44 and a gas exhaust part 45. A plurality of substrates W are respectively carried by a substrate holding member 421, and the back side (non-circuit surface) of the substrate W is heated by a heat plate 422, and the substrate holding member 421 is placed on the carrier plate 42 of the receiving part 423. In this embodiment, the reaction chamber 40 can form films on a plurality of substrates W at the same time, but the deposition process can also be performed on one substrate W. As shown in the figure, the surface of the substrate W (the circuit surface) of this embodiment is vertically downward (so-called face-down device), but in general film formation In the conditions, the influence of gravity is slight, so other embodiments where the surface of the substrate W faces upward (so-called face-up device) can also obtain the effects of this application in the same way, as shown in FIGS. 6 and 7. Therefore, this case is not limited to the downward-oriented.

The reaction chamber 40 of this embodiment has a central symmetry, and the carrier plate 42 revolves with respect to its central axis, and at the same time the substrate W can rotate on its own. The methods of rotation and revolution and the institutions used cannot be used to limit the present invention. The gas injector 44 is composed of a first injection member 441 and a second injection member 442, and is divided into three layers of gas flow passages 443-445 of upper, middle, and lower. _{In most embodiments, the H 2} /N ₂ /V group raw material gas is introduced from the upper gas flow channel 443, the group III raw material gas and carrier gas are introduced from the middle gas flow channel 444, and H is introduced from the lower gas flow channel 445. ₂ /N ₂ /V group raw material gas. The arrangement of the gas flow passages 443~245 for conveying group III and group V raw gas is not limited by this embodiment. The upper, middle and lower gas flow passages can also be in different order, for example: V/III respectively /V group raw material gas. The carrier gas can be H ₂ , N ₂ , H ₂ +N ₂ , NH ₃ (group V), H ₂ +NH ₃ (group V), or any combination of the foregoing gases.

The gas injectors 44 include a plurality of gas inlets 44a to 44c, a plurality of gas flow channels 443 to 445, and a plurality of gas outlets 44d to 44f. The plurality of gas inlets 44a to 44c introduce a plurality of gases, and respectively deliver the gases to the respective gas outlets 44d to 44f. The gases are sprayed from the gas outlets 44d to 44f to the top of the substrates W and mixed, and then the physical or chemical reaction caused by heating is used to deposit a thin film on the wafer W. The gas outlets 44d-44f are opposite to the upstream end of the injected gas system, and vice versa, the other end far away is the downstream end, that is, the end close to the gas exhaust portion 45 is the downstream end.

In this embodiment, the upper surface 431 of the opposing surface forming member 43 faces the carrier plate 42, and the distance between the carrier plate 42 and the opposing surface forming member 43 is from the upstream end or the center toward the downstream The end gradually becomes larger. That is, the upper surface 431 is not parallel to the opposing surface forming member 43, but presents an outwardly expanding inclined surface. The distance between the carrier plate 42 and the upper surface 431 The line gradually becomes larger toward the downstream end. The upper surface 431 is not limited to an inclined plane, and may also be a curved surface or a plurality of planes with different slopes. Because the distance between the carrier plate 42 and the upper surface 431 gradually increases toward the downstream end, as described in the previous paragraph [0050] [0051], the curve of the film formation rate versus the deposition position will approach the The change at the downstream end tends to be gentle (the absolute value of the slope is small). Therefore, in this embodiment, the deposited film thickness on the surface of the substrate has a better uniformity, which will be discussed in detail in the comparison of the results of the numerical simulation analysis later.

FIG. 5 is a schematic cross-sectional view of a vapor-phase film forming apparatus according to another embodiment of the present application. Compared with FIG. 4, the first upper surface 531 and the second upper surface 532 of the opposing surface forming member 53 of the reaction chamber 50 of this embodiment face the carrier plate 42, and the carrier plate 42 and the first upper surface The distance between the surfaces 531 gradually increases toward the downstream end, that is, the first upper surface 531 presents a slope with respect to the carrier plate. The second upper surface 532 is approximately parallel to the carrier plate 42. The first upper surface 531 and the second upper surface 532 are connected to the intermediate line relative to the range covered by the diameter of the substrate W above and closer to the upstream end. The cross-sectional view of the intermediate line in FIG. 5 in this embodiment passes through point A, and the periphery of the substrate W closest to the gas injector 44 is selectively aligned with the maximum film forming rate relative to the curve of the radial direction of the carrier plate 42 The position corresponding to the value will be further described in the following description.

6 is a schematic cross-sectional view of a vapor-phase film forming apparatus according to another embodiment of the application. The surface of the substrate W (surface with circuit) in the previous two embodiments is vertically downward (so-called face-down device), that is, the surface of the substrate W to be deposited faces the same direction as the direction of gravity. However, in this example, the surface of the substrate W faces upward (so-called face-up device), that is, the surface of the substrate W to be deposited faces the direction opposite to the direction of gravity. The substrate W is placed on a carrier plate 62, and a facing surface forming member 63 relative to the carrier plate 62 is entirely inclined relative to the carrier plate 62.

The embodiment of FIG. 7 and FIG. 6 are both face-up devices. At least a part of the pair of facing surface forming members 73 presents an inclined surface 731 with respect to a carrier plate 72, the carrier plate 72 and the inclined surface The distance between 731 gradually increases toward the downstream end. FIG. 8 is a schematic cross-sectional view of the numerical calculation model of the diffusion and film formation rate of the vapor-phase film forming apparatus of the present application. The surface of a substrate W faces upward and is placed on a carrier plate 82 with a radius of 300 mm, and is located within a range of 140 mm to 290 mm in the radial direction. A gas injector 84 is composed of a first injection member 841 and a second injection member 842, and is divided into upper, middle, and lower gas flow channels 843~845, and only the middle gas flow channel 844 transports precursor molecules . The ends of the first spray member 841 and the second spray member 842 are aligned with a position of 100 mm in the radial direction. For comparison and to show the advantages of the previous embodiment of the present case, a position of 155mm in the radial direction of the pair of facing surface forming member 83 is set as a turning point, wherein the inclined surface showing a downwardly tapered pitch is similar to the conventional technology in FIG. 2 The tapered model also presents an inclined plane with increasing upward spacing. It is a trumpeted model using the technology of this project, and a plane model similar to the conventional technology in FIG. 1 is also used.

FIG. 10 is a graph showing the film formation rate versus the deposition position obtained by the numerical calculation model of the embodiment of the present application and the conventional technology in FIG. 8 when the substrate is revolving. Calculate fluid velocity, precursor diffusion concentration distribution and film formation rate according to equations 1~3, and get: the chain line (﹎) represents the calculation result of model III similar to the conventional technology in Figure 2, and the solid line represents the case The calculation result of the model II of the technology, and the dashed line represents the calculation result of the plane model I similar to the conventional technology in FIG. 1. The periphery of the substrate closest to the gas injector or the upstream end is aligned at the position corresponding to the maximum value of the curve of the film forming rate with respect to the radial distance of the carrier plate.

The film formation rate of Model III decreases sharply after the substrate diameter range of 0.14m~0.29mm, which means that the film thickness of the film will become thinner in the half after the downstream end, so close to the substrate surface at the downstream end. The problem of crystal growth or reduction of film formation rate has not been effectively solved. Compared with model III, the film formation rate of model I changed slightly after the substrate diameter range from 0.14m to 0.29mm, which is more conducive to the uniformity of film thickness. In this case, the film formation rate of Model II in this case is the most gentle or slope of the half section after the substrate diameter range of 0.14m~0.29mm The absolute value is the smallest. In Model II, in order to avoid the reason for the rapid decline in the growth rate downstream, qualitatively speaking, if the height of the flow channel increases in the middle, the material molecules in the gas phase will be farther away from the substrate on average. It is more difficult for the material molecules to reach the substrate, so the growth rate here is greatly reduced compared with other modules, and the consumption of material molecules is suppressed here. Going further downstream, because the previous material molecule consumption is suppressed, it can maintain a higher concentration of material molecules than other models. As a result, the growth rate can be avoided.

FIG. 11 shows a graph of the film formation rate versus the deposition position obtained by the numerical calculation model of the embodiment of the present application and the conventional technology in FIG. 8 when the substrate has revolution and rotation. Compared with the substrate in FIG. 10 that only has revolution motion, the calculation result of the film formation rate in Figure 11 is based on the substrate having revolution and rotation motion. The film formation rate of Model II in this case is obviously close to a certain value within the diameter range of the substrate -75mm~75mm, that is, the curve is the flattest. In contrast, Model III has the largest film-forming rate at the center point (0mm) of the substrate, that is, the curve has the highest protrusion in the center of the substrate and the largest decrease in the periphery of the substrate. The curve of film formation rate versus deposition position presented by Model I is also similar to the curve of Model III. Therefore, the curve of film formation rate versus deposition position of Model II in this case is most conducive to the uniformity of film thickness, that is, the crystal growth on the surface of the substrate or the film thickness is more uniform, which can greatly improve the quality of the deposited film.

The technical content and technical features of the present invention have been disclosed as above, but those familiar with the technology may still make various substitutions and modifications based on the teaching and disclosure of the present invention without departing from the spirit of the present invention. Therefore, the scope of protection of the present invention should not be limited to those disclosed in the embodiments, but should include various substitutions and modifications that do not deviate from the present invention, and are covered by the following patent applications.

50‧‧‧Reaction Chamber

42‧‧‧Carrier plate

53‧‧‧Opposite surface forming member

531‧‧‧First upper surface

532‧‧‧Second upper surface

44‧‧‧Gas Injector

45‧‧‧Gas exhaust

421‧‧‧Substrate holding member

422‧‧‧Heat plate

423‧‧‧Receiving Department

441‧‧‧First injection member

442‧‧‧Second injection member

443~245‧‧‧Gas flow path

44a~24c‧‧‧Gas inlet

44d~24f‧‧‧Gas outlet

W‧‧‧Substrate

A‧‧‧point

Claims (22)

A vapor-phase film forming device for semiconductor manufacturing process, comprising: a carrier plate for supporting at least one substrate; a pair of facing surface forming members arranged opposite to the carrier plate; and a gas injector arranged on the carrier plate In the center of the carrier plate, a plurality of types of gases can be ejected to the middle of the substrate holding structure and the facing surface forming member, wherein one end close to the gas ejector is the upstream end, and the other end far away is the downstream end; wherein the carrier The distance between the disc and the facing surface forming member gradually increases from the upstream end or a turning point between the upstream end and the downstream end toward the downstream end. The vapor phase film forming apparatus for semiconductor manufacturing process according to claim 1, wherein the turning point is within a range covered by the diameter of the substrate. The vapor-phase film forming apparatus for semiconductor manufacturing process according to claim 2, wherein the turning point is closer to the upstream end and farther from the downstream end. The vapor phase film forming apparatus for semiconductor manufacturing process according to claim 1, wherein the periphery of the at least one substrate closest to the gas injector is aligned with a curve of a film forming rate with respect to the radial distance of the carrier plate The position corresponding to the maximum value. The vapor-phase film forming apparatus for semiconductor manufacturing process according to claim 1, wherein the carrier plate allows the at least one substrate to generate revolution and rotation motion. The vapor-phase film forming apparatus for semiconductor manufacturing process according to claim 1, wherein the surface to be deposited of the at least one substrate faces a direction opposite to the direction of gravity. The vapor-phase film forming apparatus for semiconductor manufacturing process according to claim 1, wherein the to-be-deposited surface of the at least one substrate faces the same direction as the direction of gravity. The vapor-phase film forming apparatus for semiconductor manufacturing process according to claim 1, wherein the plurality of gas systems are a mixture of H ₂ /N ₂ /V group raw material gas or group III raw material gas and carrier gas. The vapor-phase film forming apparatus for semiconductor manufacturing process according to claim 8, wherein the plurality of gas systems are used to form the film layer of group III/V compound semiconductor or group III/V nitrogen compound semiconductor. The vapor-phase film-forming apparatus for semiconductor manufacturing process according to claim 1, wherein the vapor-phase film-forming apparatus is used in a metal organic chemical vapor deposition process. A vapor-phase film forming device for semiconductor manufacturing process, comprising: a carrier plate for supporting at least one substrate; a pair of facing surface forming members arranged opposite to the carrier plate; and a gas injector arranged on the carrier plate The center of the carrier plate is capable of ejecting a plurality of gases to the middle of the substrate holding structure and the facing surface forming member, wherein one end close to the gas ejector is the upstream end, and the other end far away is the downstream end; wherein the pair At least a part of the facing surface forming member presents an inclined surface relative to the carrying plate, and the distance between the carrying plate and the inclined surface gradually increases toward the downstream end. According to claim 11, the vapor-phase film forming apparatus used in the semiconductor process, wherein the facing surface forming member is entirely inclined with respect to the susceptor. The vapor-phase film forming apparatus for a semiconductor process according to claim 11, wherein the facing surface forming member includes a horizontal plane parallel to the surface of the carrier plate, and the horizontal plane is adjacent to the upstream end. The vapor-phase film forming apparatus used in the semiconductor process according to claim 13, wherein the intermediary line in contact with the horizontal plane and the inclined plane is within a range covered by the diameter of the substrate with respect to the substrate. The vapor phase film forming apparatus for semiconductor manufacturing process according to claim 14, wherein the intermediary line is closer to the upstream end and farther from the downstream end. The vapor-phase film forming apparatus for semiconductor processing according to claim 11, wherein the periphery of the at least one substrate closest to the gas injector is aligned with a curve of a film forming rate with respect to the radial distance of the carrier plate The position corresponding to the maximum value. The vapor-phase film forming apparatus for semiconductor manufacturing process according to claim 11, wherein the carrier plate allows the at least one substrate to generate revolution and rotation motion. The vapor-phase film forming apparatus for semiconductor manufacturing process according to claim 11, wherein the surface to be deposited of the at least one substrate faces a direction opposite to the direction of gravity. The vapor-phase film forming apparatus for semiconductor manufacturing process according to claim 11, wherein the surface to be deposited of the at least one substrate faces the same direction as the direction of gravity. The vapor-phase film forming apparatus for semiconductor manufacturing process according to claim 11, wherein the plurality of gas systems H ₂ /N ₂ /V group raw material gas or group III raw material gas and carrier gas are mixed. The vapor phase film forming apparatus for semiconductor manufacturing process according to claim 20, wherein the plurality of gas systems are used to form a film layer of a III/V group compound semiconductor or a III/V group nitrogen compound semiconductor. The vapor-phase film-forming apparatus used in a semiconductor process according to claim 11, wherein the vapor-phase film-forming apparatus is used in a metal organic chemical vapor deposition process.

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