CN213781995U

CN213781995U - Reaction chamber for silicon carbide epitaxial wafer, exhaust device for silicon carbide epitaxial wafer, and semiconductor device

Info

Publication number: CN213781995U
Application number: CN202023086331.1U
Authority: CN
Inventors: 周长健; 吴从俊
Original assignee: Clc Semiconductor Co ltd
Current assignee: Clc Semiconductor Co ltd
Priority date: 2020-12-21
Filing date: 2020-12-21
Publication date: 2021-07-23
Anticipated expiration: 2030-12-21

Abstract

The utility model provides an exhaust device of a reaction chamber, wherein the reaction chamber comprises a cavity, and the exhaust device is positioned at one side of the cavity and used for exhausting redundant gas out of the cavity; exhaust apparatus includes the gas vent and sets up flow straightener on the gas vent, the gas vent sets up cavity one side, flow straightener includes base and the layer that flow equalizes, the base is installed on the gas vent, just the base is hollow structure: the flow equalizing layer is installed on the base, and a plurality of exhaust holes are formed in the flow equalizing layer. The utility model discloses simple structure can realize that each direction air current is more even in the cavity. The utility model discloses still provide a reaction chamber that contains above-mentioned exhaust apparatus's carborundum epitaxial wafer and contain the semiconductor equipment of above-mentioned reaction chamber.

Description

Reaction chamber for silicon carbide epitaxial wafer, exhaust device for silicon carbide epitaxial wafer, and semiconductor device

Technical Field

The utility model relates to a semiconductor manufacturing equipment technical field, concretely relates to carborundum epitaxial wafer's reacting chamber and exhaust apparatus and semiconductor equipment thereof.

Background

A Chemical Vapor Deposition (CVD) process is a method for preparing an epitaxial film by reacting different gases with each other at a high temperature. The flow rate of the gas in the reaction chamber affects the quality of the outer smoke film.

The CVD apparatus is provided with an exhaust device, and the exhaust rate of the exhaust device affects the flow rate of the gas in the reaction chamber. At present, in the epitaxial growth technology of wafers, horizontal gas flow growth is one of the main growth modes, namely, during the growth process, gas enters a reaction chamber from a gas inlet device, and is directly discharged to the tail end along the horizontal direction by adopting a single straight pumping mode under the action of an exhaust device. The exhaust design easily causes different gas pumping speeds in different directions in the cavity, so that different gas flows on the surface of the product, and different parts of the growing product generate differences. And with the increase of the number of the growing furnaces, the thicker the coating (coating) on the cavity wall, the stronger the viscous force on the gas, and the more drastic the difference of the flow rate, so that the quality of the product fluctuates when the product grows, and the consistency of the product is influenced.

SUMMERY OF THE UTILITY MODEL

To the deficiency and defect among the prior art, the utility model provides a reaction chamber of carborundum epitaxial wafer and exhaust apparatus and semiconductor equipment thereof for because the inhomogeneous growth inconsistent problem that causes each position of product of air current when solving horizontal air current epitaxial growth wafer.

To achieve the above and other related objects, the present invention provides an exhaust device for a reaction chamber, wherein the reaction chamber comprises a cavity, and the exhaust device is located at one side of the cavity and used for exhausting redundant gas out of the cavity; the exhaust apparatus includes:

the exhaust port is arranged on one side of the cavity; and

flow straightener installs on the gas vent, flow straightener includes:

the base is arranged on the exhaust port, is of a hollow structure and is communicated with the exhaust port; and

the flow equalizing layer is installed on the base and is provided with a plurality of exhaust holes.

In an embodiment of the present invention, the exhaust holes are dispersedly disposed on the flow-equalizing layer.

In an embodiment of the present invention, the diameter of the exhaust hole is greater than 5 mm, and the diameter of the exhaust hole is smaller than half of the diameter of the exhaust port.

In an embodiment of the present invention, the total area of the exhaust holes on the single layer flow-equalizing layer is larger than the cross-sectional area of the exhaust port.

In an embodiment of the present invention, the flow equalizing layer includes a first flow equalizing layer and a second flow equalizing layer, and the first flow equalizing layer is installed on the base; the second current equalizing layer is installed on the first current equalizing layer.

In an embodiment of the present invention, a gap is disposed between the first flow equalizing layer and the second flow equalizing layer, and the gap is an airflow diffusion space.

In an embodiment of the present invention, the exhaust holes on the first flow equalizing layer and the exhaust holes on the second flow equalizing layer are asymmetrically disposed.

In an embodiment of the present invention, the flow equalizing device passes through the base and the exhaust hole connection, the bottom shape of the base corresponds to the shape of the exhaust hole.

A second aspect of the present invention is to provide a reaction chamber for a silicon carbide epitaxial wafer, the reaction chamber comprising the above exhaust apparatus.

A third aspect of the present invention is to provide a semiconductor device comprising the above reaction chamber.

As described above, the utility model provides an exhaust apparatus of reaction chamber through increase flow straightener on the gas vent, can make the interior air current of cavity more even in all directions, makes the quantity of gas homogenization of each position of wafer product in the cavity of flowing through, and the growth of product is more even, has improved the quality of product. The base that the flow straightener passes through the bottom inserts in the gas vent, can set up first laminar flow and second laminar flow on the base, and the clearance between the two-layer laminar flow forms the gas diffusion space, makes the gas of all directions more even, and the quality of product is more even.

Drawings

The features and advantages of the invention will be more clearly understood by reference to the accompanying drawings, which are schematic and should not be understood as imposing any limitation on the invention, in which:

fig. 1 is a schematic view showing a structure of an exhaust apparatus of a reaction chamber in the related art.

Fig. 2 shows a schematic gas flow diagram of fig. 1.

Fig. 3 is a schematic structural view of an exhaust device of a reaction chamber according to the present invention.

Fig. 4 is a schematic structural diagram of a current equalizing device according to an embodiment of the present invention.

Fig. 5 shows a schematic view of the gas flow in the reaction chamber cavity of the present invention.

Reference numerals

1 chamber

2 exhaust port

3 flow equalizing device

31 base

32 current equalizing layer

33 exhaust hole

321 first current equalizing layer

322 second current-share layer

323 gas diffusion space

Detailed Description

The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The present invention can be implemented or applied in various other embodiments, and the terms "upper", "lower", "left", "right", "middle" and "one" used in the present specification are only used for the sake of clarity, and are not intended to limit the scope of the present invention, and changes or adjustments of the relative relationship thereof are also considered to be the scope of the present invention without substantial changes in the technical content.

It should be noted that the drawings provided in the present embodiment are only schematic and illustrate the basic idea of the present invention, and although the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation, the form, quantity and proportion of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.

Referring to fig. 1 and 2, the exhaust port 2 of the reaction chamber used in the horizontal gas flow growth mode is disposed at one side of the chamber 1, and because the chamber is evacuated at one side, the pumping speed at the center point is high and the pumping speed at the edge is low (see fig. 2, the arrow in the figure represents the gas flow direction) due to the flow field, which causes the non-uniform gas flow in the chamber 1, and the quality of each part of the grown wafer is not uniform.

Referring to fig. 3 to 5, the present invention provides an exhaust apparatus for a reaction chamber, which can improve the uniformity of the air flow in the reaction chamber under the growth of horizontal air flow, and improve the quality of the product.

Referring to fig. 3, the present invention provides an exhaust device for a reaction chamber, wherein the reaction chamber includes a cavity 1, and the exhaust device is installed at one side of the cavity 1 for exhausting redundant gas out of the cavity 1; exhaust apparatus includes gas vent 2 and flow straightener 3, and gas vent 2 sets up in one side of cavity 1, and flow straightener 3 installs on gas vent 2. The flow equalizing device 3 comprises a base 31 and a flow equalizing layer 32, the base 31 is installed on the exhaust port 2, the base 31 is of a hollow structure, the base 31 is communicated with the exhaust port 2, the flow equalizing layer 32 is installed on the base 31, and a plurality of exhaust holes 33 are formed in the flow equalizing layer 32. The cavity 1 is communicated with the exhaust port 1 through the flow equalizing device 3, when a wafer is epitaxially grown, reaction gas enters the cavity 1 through the gas inlet device, and under the action of the exhaust device, the gas enters the flow equalizing device 3 through the exhaust holes 33 on the flow equalizing layer 32 and then enters the exhaust port 2 to be exhausted out of the cavity. The setting of flow straightener can make the ascending air current of each side in the cavity more even.

Referring to fig. 3 and 4, in an embodiment, the exhaust holes 33 are distributed on the flow equalizing layer 32, for example, the exhaust holes 33 are uniformly arranged along the circumferential direction of the flow equalizing layer 32, wherein the diameter of each exhaust hole 33 is greater than 5 mm, the diameter of each exhaust hole is less than one half of the diameter of the exhaust port 2, and the total area of the exhaust holes 33 on each flow equalizing layer 32 is greater than the cross-sectional area of the exhaust port 2. The setting mode of the exhaust holes 33 can make the flow equalizing effect of the flow equalizing device 3 better.

Referring to fig. 3 and 4, in another embodiment, the flow equalizing device 3 includes a base 31, a first flow equalizing layer 321, and a second flow equalizing layer 322, wherein the base 31 is a hollow structure and has a bottom shape corresponding to the shape of the exhaust port 2, and the exhaust device is inserted into the exhaust port 2 through the base 31; first flow equalizing layer 321 is installed on base 31, and second flow equalizing layer 322 is installed on first flow equalizing layer 321, is equipped with the clearance between first flow equalizing layer 321 and the second flow equalizing layer 322, and this clearance is gas diffusion space 323. All be equipped with a plurality of exhaust holes 33 on first flow equalizing layer 321 and the second flow equalizing layer 322, and exhaust hole 33 on first flow equalizing layer 321 and the exhaust hole 33 on the second flow equalizing layer 322 crisscross (asymmetric) setting each other. During the pumping process, the gas flow in the chamber 1 enters the gas diffusion space 323 through the gas exhaust holes 33 on the second flow equalization layer 322, and then enters the gas exhaust port 2 through the gas exhaust holes 33 on the first flow equalization layer 321, and then is exhausted out of the reaction chamber. The gas diffusion space 323 formed between the first flow equalizing layer 321 and the second flow equalizing layer 322 can diffuse gas inside the flow equalizing device, which is helpful for gas homogenization.

Referring to fig. 3 to 5, a second aspect of the present invention further provides a reaction chamber of a silicon carbide epitaxial wafer, the reaction chamber includes a cavity 1, and an exhaust device is disposed on one side of the cavity 1, wherein the exhaust device includes an exhaust port 2 and a flow equalizing device 3, and the exhaust device is the exhaust device of the present invention, and the specific structure is as described above. The air current schematic diagram in the reaction chamber cavity 1 in this embodiment refers to fig. 5, and the arrow direction in the figure represents the air current direction, and the circular arc line represents the isokinetic line, and the direction of initial air current is unanimous, and under exhaust apparatus's effect, the air current is along the horizontal direction flow direction cavity 1 in, because exhaust apparatus establishes in one side of cavity 1, causes central point to put the draft high under the influence in flow field, and the border position draft is low, flow straightener 3 in the utility model provides a can make the extraction opening more even at the ascending air current of each side, and the draft that central point put in cavity 1 differs little with the draft of border position.

The third aspect of the present invention also provides a semiconductor device, wherein the semiconductor device comprises the above-mentioned silicon carbide epitaxial wafer, and the quality of the produced semiconductor device is more uniform.

To sum up, the utility model discloses simple structure through increase flow straightener on the gas vent, makes the cavity internal air current more even on all directions, makes the growth of reaction chamber interior product more even, has improved the quality of product. Therefore, the utility model discloses thereby effectively overcome some practical problems among the prior art and had very high use value and use meaning.

The above-described embodiments are merely illustrative of the principles of the present invention and its efficacy, rather than limiting the same, and various modifications and variations can be made by those skilled in the art without departing from the spirit and scope of the invention, such modifications and variations all falling within the scope of the appended claims.

Claims

1. An exhaust device of a reaction chamber, wherein the reaction chamber comprises a cavity, and the exhaust device is positioned at one side of the cavity and used for exhausting redundant gas out of the cavity; characterized in that the exhaust apparatus comprises:

the exhaust port is arranged on one side of the cavity; and

a flow straightener, comprising:

2. The exhaust apparatus as claimed in claim 1, wherein the exhaust holes are dispersedly formed on the flow equalizing layer.

3. The exhaust apparatus of claim 1, wherein the diameter of the vent is greater than 5 millimeters and the diameter of the vent is less than one-half the diameter of the exhaust port.

4. The exhaust apparatus as claimed in claim 3, wherein the total area of the exhaust holes in the flow equalizing layer of a single layer is larger than the cross-sectional area of the exhaust port.

5. The exhaust apparatus of claim 1, wherein the flow equalization layer comprises:

the first flow equalizing layer is arranged on the base;

and the second flow equalizing layer is arranged on the first flow equalizing layer.

6. The exhaust device according to claim 5, wherein a gap is provided between the first flow equalizing layer and the second flow equalizing layer, and the gap is a gas diffusion space.

7. The exhaust apparatus of claim 5, wherein the exhaust holes on the first flow equalization layer are asymmetrically arranged with respect to the exhaust holes on the second flow equalization layer.

8. The exhaust device according to claim 1, wherein the flow equalization device is connected to the exhaust hole through the base, and the base has a bottom shape corresponding to the shape of the exhaust hole.

9. A reaction chamber for silicon carbide epitaxial wafers, comprising the exhaust apparatus according to any one of claims 1 to 8.

10. A semiconductor device comprising the reaction chamber of claim 9.