CN114807905B

CN114807905B - Atomic layer deposition device

Info

Publication number: CN114807905B
Application number: CN202210732325.3A
Authority: CN
Inventors: 万军; 兰丽丽
Original assignee: Jiangsu Yiwen Microelectronics Technology Co Ltd; Advanced Materials Technology and Engineering Inc
Current assignee: Wuxi Yiwen Microelectronics Technology Co ltd; Jiangsu Yiwen Microelectronics Technology Co Ltd
Priority date: 2022-06-27
Filing date: 2022-06-27
Publication date: 2022-10-28
Anticipated expiration: 2042-06-27
Also published as: CN114807905A

Abstract

The invention discloses an atomic layer deposition device, and relates to the technical field of semiconductors. The atomic layer deposition device comprises an ionization cylinder, a diffusion shell and a sample stage. The diffusion shell comprises a first tube section, a diffusion section and a second tube section which are sequentially connected and coaxially arranged, the diffusion section is in a frustum shape, the small end of the diffusion section is connected with the first tube section, the first tube section is connected with the ionization tube, the large end of the diffusion section is connected with the second tube section, the second tube section is abutted against the sample table, the sample table is used for bearing wafers, and the cone angle range of the diffusion section is 40-50 degrees. Compared with the prior art, the atomic layer deposition device provided by the invention adopts the diffusion section which is arranged in a frustum shape and has the cone angle ranging from 40 degrees to 50 degrees, so that the gas field distribution in the deposition process can be ensured to be uniform, the consistency of the thickness of atomic layers deposited on a wafer is improved, and the film coating effect is good.

Description

Atomic layer deposition device

Technical Field

The invention relates to the technical field of semiconductors, in particular to an atomic layer deposition device.

Background

At present, with the continuous development of semiconductor technology, the feature size of the integrated device based on microstructure has been reduced to submicron and nanometer level in further miniaturization and integration. In the atomic layer deposition process, the Plasma Enhanced Atomic Layer Deposition (PEALD) technology not only retains many advantages of the conventional Thermal Atomic Layer Deposition (TALD), but also has the advantages of lower deposition temperature, higher deposition speed, and the like, and thus is favored by more and more enterprises. However, the existing plasma enhanced atomic layer deposition technology has the defects that the gas field distribution is not uniform enough in the deposition process, so that the atomic layer deposited on the wafer has different thicknesses, and the coating effect is poor.

In view of the above, it is important to design and manufacture an atomic layer deposition apparatus with good coating effect, especially in the semiconductor process.

Disclosure of Invention

The invention aims to provide an atomic layer deposition device which can ensure that the gas field is uniformly distributed in the deposition process, improve the consistency of the thickness of atomic layers deposited on a wafer and has a good film coating effect.

The invention is realized by adopting the following technical scheme.

The utility model provides an atomic layer deposition device, includes ionization section of thick bamboo, diffusion shell and sample platform, and the diffusion shell is including connecting gradually and coaxial first section of thick bamboo section, diffuser and the second section of thick bamboo section that sets up, and the diffuser is the frustum form, and the tip and the first section of thick bamboo section of diffuser are connected, and first section of thick bamboo section is connected with the ionization section of thick bamboo, and the main aspects and the second section of thick bamboo section of diffuser are connected, and the second section of thick bamboo section supports with the sample platform and holds, and the sample platform is used for bearing the wafer, and the cone angle scope of diffuser is 40 degrees to 50 degrees.

Optionally, the cone angle of the diffuser section is 45.5 degrees.

Optionally, the diffuser shell has a height along its axial direction in the range 230 mm to 240 mm.

Optionally, the first barrel section has an inner diameter in the range of 100 mm to 105 mm and the second barrel section has an inner diameter in the range of 210 mm to 220 mm.

Optionally, the first barrel section has a height along its axial direction in the range of 45 mm to 50 mm, and the second barrel section has a height along its axial direction in the range of 55 mm to 60 mm.

Optionally, the atomic layer deposition apparatus further includes an air inlet tube, the air inlet tube is fixedly connected to the circumferential surface of the first tube section, and an axial direction of the air inlet tube is perpendicular to an axial direction of the first tube section.

Optionally, the atomic layer deposition apparatus further includes a mounting plate and a plasma generator, one end of the ionization cylinder, which is far away from the diffusion shell, abuts against the mounting plate, the plasma generator is fixedly mounted on the mounting plate and disposed in the ionization cylinder, and the plasma generator is configured to ionize the process gas.

Optionally, an air inlet channel is formed in the mounting plate, and the air inlet channel is communicated with the ionization cylinder.

Optionally, the atomic layer deposition device further comprises an accommodating chamber and a first heating wire, the diffusion shell is fixedly connected in the accommodating chamber, the first heating wire is installed in the accommodating chamber, and the first heating wire is spirally arranged outside the diffusion shell.

Optionally, the atomic layer deposition apparatus further includes a second heating wire wound around a side of the sample stage away from the diffusion shell.

The atomic layer deposition device provided by the invention has the following beneficial effects:

the invention provides an atomic layer deposition device, wherein a diffusion shell comprises a first cylinder section, a diffusion section and a second cylinder section which are sequentially connected and coaxially arranged, the diffusion section is in a frustum shape, the small end of the diffusion section is connected with the first cylinder section, the first cylinder section is connected with an ionization cylinder, the large end of the diffusion section is connected with the second cylinder section, the second cylinder section is abutted against a sample table, the sample table is used for bearing a wafer, and the cone angle range of the diffusion section is 40-50 degrees. Compared with the prior art, the atomic layer deposition device provided by the invention adopts the diffusion section which is arranged in a frustum shape and has the cone angle ranging from 40 degrees to 50 degrees, so that the gas field distribution in the deposition process can be ensured to be uniform, the consistency of the thickness of atomic layers deposited on a wafer is improved, and the film coating effect is good.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.

FIG. 1 is a cross-sectional view of an atomic layer deposition apparatus according to an embodiment of the invention;

fig. 2 is a schematic structural diagram of a second heating wire in the atomic layer deposition apparatus according to an embodiment of the invention;

fig. 3 is a schematic structural diagram of a diffusion shell in an atomic layer deposition apparatus according to an embodiment of the present invention;

FIG. 4 is a cross-sectional view of a diffusion shell in an atomic layer deposition apparatus according to an embodiment of the invention;

FIG. 5 is a mathematical model of a diffusion shell in an atomic layer deposition apparatus according to an embodiment of the invention;

fig. 6 is a simulation diagram of gas flow simulation of an atomic layer deposition apparatus according to an embodiment of the present invention during an atomic layer deposition process;

FIG. 7 is a schematic diagram of gas flow during an atomic layer deposition process of an atomic layer deposition apparatus according to an embodiment of the present invention;

fig. 8 is a cross-sectional view of a mounting plate in an atomic layer deposition apparatus according to an embodiment of the invention.

Icon: a 100-atomic layer deposition apparatus; 110-an ionization cylinder; 120-a diffusion shell; 121-a first barrel section; 122-a diffuser section; 123-a second barrel section; 130-sample stage; 140-an air inlet cylinder; 150-a mounting plate; 151-intake passage; 160-a plasma generator; 170-a containing chamber; 180-a first heating wire; 190-a second heating wire; 200-a deposition cavity; 300-wafer.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.

Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined or explained in subsequent figures.

In the description of the present invention, it should be noted that the terms "inside", "outside", "upper", "lower", "horizontal", etc. indicate orientations or positional relationships based on orientations or positional relationships shown in the drawings or orientations or positional relationships conventionally placed when the products of the present invention are used, and are only used for convenience of description and simplification of the description, but do not indicate or imply that the devices or elements referred to must have specific orientations, be constructed in specific orientations, and operate, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another, and are not to be construed as indicating or implying relative importance.

In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "connected," "mounted," and "connected" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.

Some embodiments of the invention are described in detail below with reference to the accompanying drawings. Features in the embodiments described below may be combined with each other without conflict.

Referring to fig. 1 and fig. 2, an atomic layer deposition apparatus 100 for coating a film on a wafer 300 by atomic layer deposition is provided in an embodiment of the present invention. The method can ensure that the gas field is uniformly distributed in the deposition process, improve the consistency of the thickness of atomic layers deposited on the wafer 300 and achieve good film coating effect.

It should be noted that, when the atomic layer deposition apparatus 100 is applied to a plasma enhanced atomic layer deposition process, the atomic layer deposition apparatus 100 can ionize a process gas into a plasma gas, and make the plasma gas uniformly adsorbed on the surface of the wafer 300, so as to implement a function of coating a film on the wafer 300.

The atomic layer deposition apparatus 100 includes an ionization cylinder 110, a diffusion case 120, a sample stage 130, an air inlet cylinder 140, a mounting plate 150, a plasma generator 160, a housing chamber 170, a first heating wire 180, and a second heating wire 190. One end of the diffusion shell 120 is connected with the ionization tube 110, the other end of the diffusion shell 120 abuts against the sample stage 130, one end, away from the diffusion shell 120, of the ionization tube 110 abuts against the mounting plate 150, the ionization tube 110, the diffusion shell 120 and the sample stage 130 jointly form a closed deposition cavity 200, the sample stage 130 is used for bearing a wafer 300, and the atomic layer deposition device 100 can perform atomic layer deposition on the wafer 300 in the deposition cavity 200 to realize a film coating function of the wafer 300. In this embodiment, the diffusion shell 120 and the ionization cylinder 110 are both disposed along a vertical direction, the sample stage 130 is disposed horizontally, the ionization cylinder 110 is disposed above the diffusion shell 120, and the sample stage 130 is disposed below the diffusion shell 120.

The plasma generator 160 is fixedly mounted on the mounting plate 150 and disposed in the ionization cylinder 110, and the plasma generator 160 is used for ionizing the process gas to become the plasma gas. The plasma gas flows downward in the deposition cavity 200, and in the process, the diffusion housing 120 diffuses the plasma gas so that it is saturated and adsorbed on the surface of the wafer 300. An air inlet barrel 140 is mounted on the diffusion housing 120, and the air inlet barrel 140 serves to ventilate the deposition cavity 200.

Further, the diffusion shell 120 is fixedly connected in the accommodating chamber 170, that is, the deposition cavity 200 is located in the accommodating chamber 170, and the arrangement of the inner cavity and the outer cavity enables the plasma gas of the atomic layer deposition apparatus 100 to only contact the inner surface of the diffusion shell 120 during film coating, and the inner surface of the diffusion shell 120 is coated with a film, so that the film cannot overflow to the accommodating chamber 170, which is convenient for cleaning and maintenance, reduces maintenance cost, and improves maintenance efficiency. Meanwhile, since the diffusion range of the plasma is concentrated on the sample stage 130, the wafer 300 placed on the sample stage 130 can obtain higher deposition quality.

Specifically, the first heating wire 180 is installed in the accommodating chamber 170, and is spirally disposed outside the diffusion shell 120, and the first heating wire 180 can heat and raise the temperature in an electric state to uniformly transfer the heat to the diffusion shell 120, so that the side surface of the deposition cavity 200 is uniformly heated, and the atomic layer deposition effect is improved. The second heating wire 190 is wound on one side of the sample stage 130 far away from the diffusion shell 120, and the second heating wire 190 can heat and raise the temperature in a power-on state so as to uniformly transfer the heat to the sample stage 130, so that the bottom surface of the deposition cavity 200 is uniformly heated, and the atomic layer deposition effect is improved. The first heating wire 180 and the second heating wire 190 act together to generate an even thermal field in the diffusion shell 120, thereby ensuring the atomic layer deposition effect and improving the coating effect.

Referring to fig. 3, 4 and 5, the diffuser shell 120 includes a first cylinder section 121, a diffuser section 122 and a second cylinder section 123, wherein the first cylinder section 121, the diffuser section 122 and the second cylinder section 123 are connected in sequence and coaxially disposed, and the diffuser section 122 is used for diffusing the plasma gas. In this embodiment, the first barrel section 121, the diffuser section 122 and the second barrel section 123 are integrally formed to improve the coupling strength. The diffusion section 122 is in a frustum shape, the small end of the diffusion section 122 is connected with the first cylinder section 121, and the first cylinder section 121 is connected with the ionization cylinder 110; the large end of the diffuser section 122 is connected to the second cylindrical section 123, and the second cylindrical section 123 abuts against the sample stage 130. The plasma gas formed by the ionization of the plasma generator 160 flows into the first cylinder section 121 along the ionization cylinder 110 and flows into the second cylinder section 123 through the diffuser 122 until being adsorbed on the wafer 300 carried by the sample stage 130.

It should be noted that the taper angle range of the diffusion section 122 is 40 degrees to 50 degrees, and the reasonable taper angle of the diffusion section 122 can ensure that a uniform laminar flow gas field is obtained, thereby facilitating the realization of uniform atomic layer deposition, improving the consistency of the thickness of atomic layers deposited on the wafer 300, and improving the film coating effect. In this embodiment, the taper angle of the diffuser section 122 is 45.5 degrees, but is not limited thereto, and in other embodiments, the taper angle of the diffuser section 122 may be 40 degrees or 50 degrees, and the taper angle of the diffuser section 122 is not particularly limited.

Further, the height of the diffusion housing 120 in the axial direction thereof ranges from 230 mm to 240 mm, and since the diffusion housing 120 is disposed in the vertical direction, the axial direction of the diffusion housing 120 is the vertical direction. When the height of the diffusion housing 120 in the axial direction thereof is too high, the plasma gas flowing over the surface of the wafer 300 may be reduced in concentration due to electrical neutralization; when the height of the diffusion housing 120 in the axial direction thereof is too low, the charged plasma gas may damage the wafer 300. Therefore, the reasonable height of the diffusion housing 120 along the axial direction thereof can ensure the required plasma gas concentration, and can ensure that the wafer 300 is not electrically damaged, thereby having the best comprehensive effect. In this embodiment, the height of the diffusion casing 120 in the axial direction thereof is 235 mm, but the invention is not limited thereto, and in other embodiments, the height of the diffusion casing 120 in the axial direction thereof may be 230 mm or 240 mm, and the height of the diffusion casing 120 in the axial direction thereof is not particularly limited.

Specifically, the height of the first cylinder segment 121 in the axial direction thereof ranges from 45 mm to 50 mm, and the height of the second cylinder segment 123 in the axial direction thereof ranges from 55 mm to 60 mm, and the reasonable height of the first cylinder segment 121 in the axial direction thereof and the height of the second cylinder segment 123 in the axial direction thereof can further ensure the plasma gas concentration and prevent the wafer 300 from being electrically damaged. In the present embodiment, the height of the first cylinder section 121 in the axial direction thereof is 48.5 mm, and the height of the second cylinder section 123 in the axial direction thereof is 57.5 mm, but the present invention is not limited thereto, and in other embodiments, the height of the first cylinder section 121 in the axial direction thereof may be 45 mm or 50 mm, and the height of the second cylinder section 123 in the axial direction thereof may be 55 mm or 60 mm, and the height of the first cylinder section 121 in the axial direction thereof and the height of the second cylinder section 123 in the axial direction thereof are not particularly limited.

Accordingly, the inner diameter of the first cylinder section 121 ranges from 100 mm to 105 mm, the inner diameter of the second cylinder section 123 ranges from 210 mm to 220 mm, and the reasonable inner diameter of the first cylinder section 121 and the inner diameter of the second cylinder section 123 can further improve the uniformity of the plasma gas flow and ensure the uniform distribution of the gas field in the deposition process. In this embodiment, the inner diameter of the first cylinder section 121 is 103 mm, and the inner diameter of the second cylinder section 123 is 214 mm, but not limited thereto, in other embodiments, the inner diameter of the first cylinder section 121 may be 100 mm or 105 mm, and the inner diameter of the second cylinder section 123 may be 210 mm or 220 mm, and the inner diameters of the first cylinder section 121 and the second cylinder section 123 are not particularly limited.

For ease of understanding, the cone angle of the diffuser section 122 is denoted by a, the height of the diffuser shell 120 in its axial direction is denoted by H, the height of the first barrel section 121 in its axial direction is denoted by a, the height of the second barrel section 123 in its axial direction is denoted by B, the inner diameter of the first barrel section 121 is denoted by M, and the inner diameter of the second barrel section 123 is denoted by N.

During deposition, adiabatic expansion of the gas during diffusion is not desired, and studies have shown that tapering the gas passages is beneficial to reduce the degree of adiabatic expansion, but the tapered passages cause the gas flow to flow through flow patterns such as vortices, swirls, etc. to form an annular gas flow. The present invention is directed to studying how to control the gas containing the direct current and the annular gas flow to form a uniform flow field so as to improve the uniformity of deposition, and by defining the shape and size of the diffuser 122 (such as the taper angle of the diffuser 122, the height of the diffuser shell 120, the height of the first cylinder section 121, the height of the second cylinder section 123, the inner diameter of the first cylinder section 121 and the inner diameter of the second cylinder section 123), a reasonable shape design of the deposition cavity 200 can be obtained, so that a more uniform thermal field and gas field can be obtained during the atomic layer deposition process, and the thermal field and the gas field influence each other, so that the plasma gas can uniformly flow in the deposition cavity 200, and the uniformity of the thickness of the atomic layer deposited on the wafer 300 can be improved.

Among them, the cone angle of the diffuser section 122 is confirmed as the factor that most influences the uniformity of the gas flow, and one possible explanation is that the influence of the cone angle on the circular gas flow is large, and the composition ratio of the direct current gas flow to the circular gas flow and the direction of the circular gas flow have a large influence on the uniformity of the gas field. In addition, the dimensional optimization of the height of the diffuser shell 120, the height and inner diameter of the first cylinder section 121, and the height and inner diameter of the second cylinder section 123 may further enhance the uniformity of the gas field, thereby further optimizing the uniformity of deposition.

Specifically, a simulation model is established based on the deposition cavity 200, and plasma gas diffusion simulation is performed on the simulation model according to set parameters, so that a flow chart of the gas flow rate is obtained as shown in fig. 6 and 7. As can be seen from fig. 6 and 7, the atomic layer deposition apparatus 100 of the present invention has a uniform distribution of airflow velocity in the deposition cavity 200, so as to achieve a high uniformity of deposition.

Referring to fig. 8, in the present embodiment, the air inlet cylinder 140 is fixedly connected to the circumferential surface of the first cylinder segment 121, and the axial direction of the air inlet cylinder 140 is perpendicular to the axial direction of the first cylinder segment 121, so as to facilitate ventilation into the deposition cavity 200. An air inlet channel 151 is formed in the mounting plate 150, the air inlet channel 151 is communicated with the ionization chamber 110, and the air inlet channel 151 is used for ventilating the deposition cavity 200.

It should be noted that the atomic layer deposition process using the atomic layer deposition apparatus 100 includes the following steps:

step S110: a process gas (e.g., nitrogen, ammonia, etc.) is introduced into the deposition cavity 200 from the gas inlet channel 151, the plasma generator 160 is activated to ionize the process gas into a plasma gas, the plasma gas flows downward under the action of the gas pressure, diffuses outward after flowing through the diffusion housing 120, and finally uniformly flows over the surface of the wafer 300 and is adsorbed by the wafer 300, and the excess unadsorbed plasma gas is pumped outward by the vacuum pump.

Step S120: an inert gas (e.g., nitrogen, argon, etc.) is introduced into the deposition cavity 200 from the gas inlet channel 151, and the plasma generator 160 is turned off to blow off the residual plasma gas in the deposition cavity 200 and the excess plasma gas on the surface of the wafer 300 and to draw them out by a vacuum pump.

Step S130: the metal organic compound gas is introduced into the deposition cavity 200 from the gas inlet cylinder 140, the metal organic compound gas diffuses outwards after flowing through the diffusion shell 120, uniformly flows over the surface of the wafer 300 and is adsorbed by the wafer 300, and the excess metal organic compound gas which is not adsorbed is pumped outwards by a vacuum pump.

Step S140: an inert gas (e.g., nitrogen, argon, etc.) is introduced into the deposition cavity 200 from the gas inlet tube 140 to blow off the residual metal organic compound gas in the deposition cavity 200 and the excess metal organic compound gas on the surface of the wafer 300, and is pumped out by a vacuum pump.

And repeating the steps S110, S120, S130 and S140 in a circulating manner until the atomic layer deposited on the wafer 300 reaches a preset thickness, thereby completing the atomic layer deposition.

In the atomic layer deposition apparatus 100 provided in the embodiment of the invention, the diffusion shell 120 includes a first tube section 121, a diffusion section 122, and a second tube section 123, which are sequentially connected and coaxially disposed, the diffusion section 122 is in a frustum shape, a small end of the diffusion section 122 is connected to the first tube section 121, the first tube section 121 is connected to the ionization tube 110, a large end of the diffusion section 122 is connected to the second tube section 123, the second tube section 123 abuts against the sample stage 130, the sample stage 130 is used for bearing the wafer 300, and a cone angle range of the diffusion section 122 is 40 degrees to 50 degrees. Compared with the prior art, the atomic layer deposition device 100 provided by the invention adopts the diffusion section 122 which is arranged in a frustum shape and has the cone angle ranging from 40 degrees to 50 degrees, so that the gas field distribution can be ensured to be uniform in the deposition process, the consistency of the thickness of the atomic layer deposited on the wafer 300 is improved, and the film coating effect is good.

The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes will occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. An atomic layer deposition device is characterized by comprising an ionization cylinder (110), a diffusion shell (120) and a sample stage (130), wherein the diffusion shell (120) comprises a first cylinder section (121), a diffusion section (122) and a second cylinder section (123) which are sequentially connected and coaxially arranged, the diffusion section (122) is in a frustum shape, the small end of the diffusion section (122) is connected with the first cylinder section (121), the first cylinder section (121) is connected with the ionization cylinder (110), the large end of the diffusion section (122) is connected with the second cylinder section (123), the second cylinder section (123) is abutted against the sample stage (130), the sample stage (130) is used for bearing a wafer (300), and the cone angle range of the diffusion section (122) is 40-50 degrees;

the diffusion case (120) has a height in the axial direction thereof in the range of 230 to 240 mm; the inner diameter of the first cylinder section (121) ranges from 100 mm to 105 mm, and the inner diameter of the second cylinder section (123) ranges from 210 mm to 220 mm; the height of the first cylinder section (121) along the axial direction thereof ranges from 45 mm to 50 mm, and the height of the second cylinder section (123) along the axial direction thereof ranges from 55 mm to 60 mm;

the atomic layer deposition device further comprises an accommodating chamber (170) and a first heating wire (180), the diffusion shell (120) is fixedly connected in the accommodating chamber (170), and the first heating wire (180) is arranged in the accommodating chamber (170) and is spirally arranged outside the diffusion shell (120);

the atomic layer deposition device further comprises a second heating wire (190), and the second heating wire (190) is wound on one side, away from the diffusion shell (120), of the sample stage (130).

2. The atomic layer deposition apparatus according to claim 1, characterized in that the cone angle of the diffuser section (122) is 45.5 degrees.

3. The atomic layer deposition apparatus according to claim 1, further comprising an inlet manifold (140), wherein the inlet manifold (140) is fixedly connected to the circumferential surface of the first manifold section (121), and wherein an axial direction of the inlet manifold (140) is arranged perpendicular to an axial direction of the first manifold section (121).

4. The atomic layer deposition apparatus according to claim 1, further comprising a mounting plate (150) and a plasma generator (160), wherein an end of the ionization cylinder (110) away from the diffusion housing (120) abuts against the mounting plate (150), the plasma generator (160) is fixedly mounted on the mounting plate (150) and disposed within the ionization cylinder (110), and the plasma generator (160) is configured to ionize a process gas.

5. The atomic layer deposition apparatus according to claim 4, wherein an air inlet channel (151) is formed in the mounting plate (150), the air inlet channel (151) communicating with the ionization cylinder (110).