CN216404533U

CN216404533U - Atomic layer deposition coating equipment

Info

Publication number: CN216404533U
Application number: CN202122978612.6U
Authority: CN
Inventors: 陈文翰; 李哲峰
Original assignee: Shenzhen Superald Technology Co ltd
Current assignee: Shenzhen Superald Technology Co ltd
Priority date: 2021-11-30
Filing date: 2021-11-30
Publication date: 2022-04-29
Anticipated expiration: 2031-11-30

Abstract

The utility model discloses atomic layer deposition coating equipment which comprises a coating cavity, a plasma generator, a diffusion cavity, a source air inlet device and a shielding pore plate, wherein the diffusion cavity is used for connecting the plasma generator with the coating cavity, the source air inlet device is connected with the diffusion cavity, and the shielding pore plate is arranged between the plasma generator and the diffusion cavity and is used for filtering preset particles in plasma. According to the atomic layer deposition coating equipment, the shielding hole plate used for filtering the predetermined particles in the plasma is arranged between the plasma generator and the diffusion cavity, so that the problem that the predetermined particles continuously bombard the non-metallic materials in the plasma source to generate dust can be avoided, the coating quality can be obviously improved, the yield is integrally improved, and the coating cost is reduced.

Description

Atomic layer deposition coating equipment

Technical Field

The utility model relates to the technical field of atomic layer deposition coating, in particular to atomic layer deposition coating equipment.

Background

Atomic Layer Deposition (ALD) is a process by which a substance is deposited layer by layer as a monoatomic film on a substrate surface. In an atomic layer deposition process, the chemical reaction of a new atomic film is directly related to the previous one. Thus, only one layer of atoms is deposited per reaction. Each cycle of atomic layer deposition includes two half-reactions. The chemical adsorption and surface chemical reaction of each step have obvious self-limitation and complementarity. This self-limiting property is the basis of atomic layer deposition techniques. This self-limiting reaction is repeated to form the desired thin film. One atomic layer deposition cycle can be divided into four steps: 1) introducing a first precursor gas into a substrate, wherein the substrate is adsorbed or reacts with the surface of the substrate; 2) flushing the remaining gas with an inert gas; 3) forming a coating by a chemical reaction of the second precursor gas and the first precursor gas adsorbed on the surface of the substrate, or forming the coating by a continuous reaction of a product of the reaction with the first precursor gas and the substrate; 4) the excess gas is flushed away with the flushing gas. By controlling the deposition period, precise control of the film thickness can be achieved.

In some coating operations, a plasma source generated by the plasma generator continuously bombards a non-metallic material to generate dust, which affects the coating quality and may cause a low yield.

SUMMERY OF THE UTILITY MODEL

The utility model aims to provide atomic layer deposition coating equipment.

The technical scheme adopted by the utility model for solving the technical problems is as follows: the atomic layer deposition coating equipment comprises a coating cavity, a plasma generator, a diffusion cavity, a source air inlet device and a shielding pore plate, wherein the diffusion cavity is used for connecting the plasma generator with the coating cavity, the source air inlet device is connected with the diffusion cavity, and the shielding pore plate is arranged between the plasma generator and the diffusion cavity and is used for filtering preset particles in plasma.

Preferably, the shielding aperture plate includes a metal plate and a dielectric plate;

the lower surface of the metal plate is attached to the upper surface of the dielectric plate.

Preferably, a plurality of first through holes are formed in the metal plate, a plurality of second through holes matched with the first through holes are formed in the dielectric plate, and the first through holes are correspondingly communicated with the second through holes.

Preferably, the inner diameter of the first through holes is larger than the inner diameter of the second through holes.

Preferably, the inner diameter of the first through holes is larger than 2 times of the thickness of the plasma sheath layer;

the inner diameter of the second through holes is smaller than 2 times of the thickness of the plasma sheath layer.

Preferably, the inner diameter of the plurality of second through holes is 0.2mm-10 mm.

Preferably, the metal plate comprises a molybdenum plate or a nickel plate;

the dielectric plate includes a ceramic plate.

Preferably, the atomic layer deposition coating equipment further comprises a separator arranged between the plasma generator and the diffusion cavity;

the isolating piece comprises a ball valve, a butterfly valve, a gate valve or a metal baffle.

Preferably, the plasma generator comprises a plasma source cavity, an inductive coupling coil matched with the plasma source cavity, and a plasma gas inlet device communicated with the plasma source cavity.

Preferably, the atomic layer deposition coating equipment further comprises a diffusion plate arranged between the coating chamber and the diffusion chamber.

The implementation of the utility model has the following beneficial effects: according to the atomic layer deposition coating equipment, the shielding pore plate used for filtering the predetermined particles in the plasma is arranged between the plasma generator and the diffusion cavity, so that the problem that the predetermined particles continuously bombard the non-metallic materials in the plasma source to generate dust can be avoided, the coating quality can be obviously improved, the yield is integrally improved, and the coating cost is reduced.

Drawings

The utility model will be further described with reference to the accompanying drawings and examples, in which:

FIG. 1 is a schematic structural diagram of an atomic layer deposition coating apparatus according to the present invention.

FIG. 2 is a schematic diagram of a shield aperture plate in accordance with some embodiments of the utility model;

FIG. 3 is a side view of the shield aperture plate of FIG. 2;

fig. 4 is a cross-sectional view of the shield aperture plate of fig. 3 taken along section line a-a.

Detailed Description

For a more clear understanding of the technical features, objects and effects of the present invention, embodiments of the present invention will now be described in detail with reference to the accompanying drawings. In the following description, it is to be understood that the orientations and positional relationships indicated by "front", "rear", "upper", "lower", "left", "right", "longitudinal", "lateral", "vertical", "horizontal", "top", "bottom", "inner", "outer", "leading", "trailing", and the like are configured and operated in specific orientations based on the orientations and positional relationships shown in the drawings, and are only for convenience of describing the present invention, and do not indicate that the device or element referred to must have a specific orientation, and thus, are not to be construed as limiting the present invention.

It is also noted that, unless expressly stated or limited otherwise, the terms "mounted," "connected," "secured," "disposed," and the like are intended to be inclusive and mean, for example, that they may be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. When an element is referred to as being "on" or "under" another element, it can be "directly" or "indirectly" on the other element or intervening elements may also be present. The terms "first", "second", "third", etc. are only for convenience in describing the present technical solution, and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated, whereby the features defined as "first", "second", "third", etc. may explicitly or implicitly include one or more of such features. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.

Referring to fig. 1, an atomic layer deposition coating apparatus according to some embodiments of the present invention includes a coating chamber 1, a plasma generator 2, a diffusion chamber 3 connecting the plasma generator 2 and the coating chamber 1, a source gas inlet device 4 connected to the diffusion chamber 3, and a shielding hole plate 5 disposed between the plasma generator 2 and the diffusion chamber 3 for filtering predetermined particles in plasma.

In the embodiment, a sample stage 7 for placing a substrate is arranged in the coating chamber 1, the source gas inlet device 4 inputs process gas into the diffusion chamber 3, and the process gas enters the coating chamber 1 and participates in reaction with the plasma source under a preset condition to form a corresponding film layer on the substrate.

The plasma generator 2 comprises a plasma source cavity 21, an inductive coupling coil 22 matched with the plasma source cavity 21 and a plasma gas inlet device 23 communicated with the plasma source cavity 21. In this embodiment, the inductive coupling coil 22 may have a planar structure, a cylindrical structure, or a combination of a planar structure and a cylindrical structure. The column structure may be one or more, and may be arranged up and down in space, and it can be understood that the plasma generator 20 may be selectively arranged according to actual requirements.

The inductive coupling coil 22 is electrified to generate a predetermined magnetic field area, the plasma gas inlet device 23 delivers corresponding gas, and the gas generates a corresponding plasma source under the action of the magnetic field.

In this embodiment, the diffusion cavity 3 is of a trumpet-shaped structure, the upper end of the diffusion cavity is connected with the lower end of the plasma source cavity 21, the lower end of the diffusion cavity is connected with the upper end of the coating chamber 1, and the cross-sectional size of the diffusion cavity 3 gradually increases from the upper end to the lower end thereof, so that the inner cavity of the diffusion cavity 3 forms a diffusion channel, and the process gas can be diffused in the diffusion channel and can be distributed more uniformly.

Preferably, the atomic layer deposition coating equipment further comprises a diffusion plate 8 arranged between the coating chamber 1 and the diffusion chamber 3, and through holes uniformly distributed are formed in the diffusion plate 8 to drive the process gas and the like to be dispersed through the through holes, so that the distribution uniformity is further improved.

Referring to fig. 2 to 4, in the present embodiment, the shielding orifice 5 may be disposed in the plasma source cavity 21, and is used for filtering predetermined particles in the plasma, where the predetermined particles may be ions and electrons in the plasma, and radicals, atoms, molecules, and the like required by the plasma process pass through into the coating chamber 1. The shielding orifice plate 5 can prevent electrons and ions from bombarding certain components in the chamber (including the plasma source chamber 21, the coating chamber 1, the diffusion chamber 3 and the like), such as O-rings, Teflon parts and the like, to generate particles to influence the process, and further, the shielding orifice plate 5 can weaken the electron-induced damage of the plasma to the substrate.

In the present embodiment, the shielding aperture plate 5 may include a metal plate 51 and a dielectric plate 52, and a lower surface of the metal plate is attached to an upper surface of the dielectric plate 52.

The metal plate 51 preferably comprises a molybdenum plate or a nickel plate, but may be a metal plate made of other sputtering-resistant metals, which can act to terminate the field strength and annihilate electrons in the plasma. And the dielectric plate 52 comprises a ceramic plate that functions to pass only radicals, atoms, and molecules in the plasma. The shielding hole plate 5 is preferably made of wear-resistant and high-temperature-resistant materials, so that the problem of dust generated when the materials rotate frequently at high temperature can be avoided.

Preferably, the metal plate 51 is provided with a plurality of first through holes 511, the dielectric plate 52 is provided with a plurality of second through holes 521 matching with the plurality of first through holes 511, and the plurality of first through holes 511 are correspondingly communicated with the plurality of second through holes 521. In this embodiment, the metal plate 51 and the dielectric plate 52 may be both disc-shaped, and the thicknesses of the two plates may be equal or slightly different. The aperture of the first through holes 511 in the metal plate 51 may gradually increase or decrease from the center thereof toward the outer circumference, and/or the number of the first through holes 511 in the metal plate 51 may gradually increase or decrease from the center thereof toward the outer circumference, and the arrangement of the second through holes 521 on the dielectric plate 52 is similar to that of the first through holes 511 in the metal plate 51. It can be understood that the distribution of the via density can be adjusted according to the requirements of the process uniformity and the film forming rate.

Preferably, the inner diameter of the plurality of first through holes 511 is greater than the inner diameter of the plurality of second through holes 521.

Further, the inner diameter of the first through holes 511 is larger than 2 times the thickness of the plasma sheath, thereby terminating the electric field and annihilating electrons in the plasma.

The inner diameter of the second through holes 521 is less than 2 times of the thickness of the plasma sheath, and preferably, the inner diameter of the second through holes 521 is 0.2mm to 10mm, which can filter ions in the plasma. The plasma sheath is the thickness of the electrically non-neutral region between the plasma boundary and the plasma source cavity 21. When the plasma atmosphere in a narrow air hole (less than 2 times the thickness of the plasma sheath) passes through, ions in the plasma are converted into atomic forms and the like due to the narrow space.

E.g. sheath thickness

The electron temperature kT of the plasma at the power of 200W in the common plasma process is about 2eV, and the electron density n is about 10^-8cm^-3(ii) a The corresponding sheath thickness is about 1 mm.

In this embodiment, the ald coating equipment further includes a spacer 6 disposed between the plasma generator 2 and the diffusion chamber 3, where the spacer 6 may be disposed in the plasma source chamber 21 and located below the shielding hole plate 5, and preferably, the spacer 6 includes a ball valve, a butterfly valve, a gate valve, or a metal baffle plate, and the metal baffle plate is provided with a through hole with a predetermined size.

Preferably, the atomic layer deposition coating equipment further comprises an air extractor 9, the air extractor comprises a vacuum pump 92 connected with the coating chamber 1 through an air extraction pipe 91, and a valve 93 is arranged on the air extraction pipe 91.

It should be noted that, for a person skilled in the art, the above technical features can be freely combined, and several variations and modifications can be made without departing from the concept of the present invention, which all fall into the protection scope of the present invention.

Claims

1. The atomic layer deposition coating equipment is characterized by comprising a coating chamber (1), a plasma generator (2), a diffusion cavity (3) connecting the plasma generator (2) with the coating chamber (1), a source air inlet device (4) connected with the diffusion cavity (3), and a shielding pore plate (5) arranged between the plasma generator (2) and the diffusion cavity (3) and used for filtering preset particles in plasma.

2. The atomic layer deposition coating apparatus according to claim 1, wherein the shielding aperture plate (5) comprises a metal plate (51) and a dielectric plate (52);

the lower surface of the metal plate is fitted to the upper surface of the dielectric plate (52).

3. The atomic layer deposition coating equipment according to claim 2, wherein a plurality of first through holes (511) are formed in the metal plate (51), a plurality of second through holes (521) matched with the plurality of first through holes (511) are formed in the dielectric plate (52), and the plurality of first through holes (511) are correspondingly communicated with the plurality of second through holes (521).

4. The atomic layer deposition coating device according to claim 3, wherein the inner diameter of the first plurality of through holes (511) is larger than the inner diameter of the second plurality of through holes (521).

5. The atomic layer deposition coating device according to any of the claims 3 or 4, wherein the inner diameter of the first plurality of through holes (511) is larger than 2 times the thickness of the plasma sheath;

the inner diameter of the plurality of second through holes (521) is less than 2 times the thickness of the plasma sheath.

6. The atomic layer deposition coating device according to claim 5, wherein the inner diameter of the second through holes (521) is 0.2mm to 10 mm.

7. The atomic layer deposition coating device according to claim 2, wherein the metal plate (51) comprises a molybdenum plate or a nickel plate;

the dielectric plate (52) comprises a ceramic plate.

8. The atomic layer deposition coating device according to claim 1, further comprising a spacer (6) arranged between the plasma generator (2) and the diffusion chamber (3);

the isolating piece (6) comprises a ball valve, a butterfly valve, a gate valve or a metal baffle.

9. The atomic layer deposition coating device according to claim 1, wherein the plasma generator (2) comprises a plasma source chamber (21), an inductive coupling coil (22) cooperating with the plasma source chamber (21), and a plasma gas inlet (23) communicating with the plasma source chamber (21).

10. The atomic layer deposition coating device according to claim 1, further comprising a diffuser plate (8) arranged between the coating chamber (1) and the diffusion chamber (3).