CN113808899A - High-uniformity gas path system applied to plasma processing device - Google Patents
High-uniformity gas path system applied to plasma processing device Download PDFInfo
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- CN113808899A CN113808899A CN202010553300.8A CN202010553300A CN113808899A CN 113808899 A CN113808899 A CN 113808899A CN 202010553300 A CN202010553300 A CN 202010553300A CN 113808899 A CN113808899 A CN 113808899A
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- uniform flow
- bottom plate
- hollow base
- top cover
- cavity
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- 239000000919 ceramic Substances 0.000 claims abstract description 18
- 238000000605 extraction Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 abstract description 32
- 238000000034 method Methods 0.000 abstract description 20
- 238000005530 etching Methods 0.000 abstract description 9
- 238000005086 pumping Methods 0.000 description 18
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention discloses a high-uniformity gas circuit system applied to a plasma processing device, which comprises an inner hollow base, wherein the side wall of the inner hollow base is provided with steps, the opening of the inner hollow base is covered with a second uniform flow bottom plate, second uniform flow nozzles are distributed on the second uniform flow bottom plate, the upper part of the second uniform flow bottom plate is covered with a first uniform flow bottom plate, first uniform flow nozzles are distributed on the first uniform flow bottom plate, a top cover is arranged on the first uniform flow bottom plate, and a first gas inlet and a second gas inlet are arranged on the top cover; the inside of interior empty base is equipped with ceramic lining, forms the cavity between ceramic lining and the step on the interior empty base lateral wall, and the bottom of interior empty base still is equipped with the air bleed passageway of intercommunication cavity. The invention has simple structure, can uniformly mix various process gases through each flow-equalizing cavity, is convenient to use, and meets the requirements of high-precision control and large-area etching uniformity.
Description
Technical Field
The invention relates to the technical field of etching and coating, in particular to a high-uniformity gas path system applied to a plasma processing device.
Background
With the continuous reduction of the device size, the precision of the manufacturing process of the semiconductor equipment needs to be continuously improved, and the Atomic Layer Etching (ALE) in the dielectric etching which can be used for conductor etching provides a solution for improving the whole process precision. The ALE process is an advanced technique that enables precise control of the amount of material removed, enabling precise control at the atomic level. Only a thin layer of material is removed in each cycle, so that high requirements are provided for the process time and the step period of equipment, and high requirements are provided for the uniformity of a gas circuit system.
Vacuum plasma etching and coating equipment gas pumping system in the trade at present is mostly the first air inlet of list and single channel pump system of pumping, and this kind of structure is fairly simple and easy, and first air inlet and pump system of pumping distribute in the upper and lower position at cavity center, and gas gets into the cavity through the nozzle and later on not enough diffusion evenly is taken away by pump system of pumping promptly, has not satisfied the requirement of gas distribution high accuracy control and large tracts of land etching homogeneity. At present, mainstream equipment in the market usually only considers the uniformity of air intake to set a partial uniform flow structure, but does not consider the uniformity of air intake and air exhaust at the same time; or only the pumping efficiency and convenience are considered, and the influence of the pumping uniformity on the process uniformity is not considered. In fact, in order to achieve higher process requirements, a uniform process gas distribution inside the chamber is essential, and therefore, the uniformity of both the gas inlet system and the gas exhaust system needs to be considered.
Disclosure of Invention
The invention aims to solve the defect of poor process gas uniformity in the use of plasma etching equipment and plasma coating equipment in the prior art, and provides a high-uniformity gas path system applied to a plasma processing device.
In order to achieve the purpose, the invention adopts the following technical scheme:
a high-uniformity gas circuit system applied to a plasma processing device comprises an inner hollow base with an upward opening, wherein the side wall of the inner hollow base is provided with steps, the opening of the inner hollow base is covered with a second uniform flow bottom plate, second uniform flow nozzles leading to the inside of the inner hollow base are distributed on the second uniform flow bottom plate, the second uniform flow bottom plate is of a concave structure, a first uniform flow bottom plate is covered and arranged at the upper part of the base, first uniform flow nozzles are distributed on the first uniform flow bottom plate, the first uniform flow nozzles penetrate through a second uniform flow bottom plate and are communicated with the inside of the hollow base, a top cover is arranged on the first uniform flow bottom plate, the top cover is of an inwards concave structure, the concave surface of the first flow-equalizing bottom plate is covered on the first flow-equalizing bottom plate, the top cover is provided with a first air inlet which leads to the space between the top cover and the first flow-equalizing bottom plate, the top cover is also provided with a second air inlet communicated with a space between the first uniform flow bottom plate and the second uniform flow bottom plate; the inner hollow base is internally provided with an annular ceramic lining, the first uniform flow nozzle and the second uniform flow nozzle are communicated into an annular structure of the ceramic lining, a cavity is formed between the ceramic lining and a step on the side wall of the inner hollow base, through holes communicated with the cavity are distributed around the periphery of the ceramic lining, and the bottom of the inner hollow base is further provided with an air exhaust channel communicated with the cavity.
As a further preferable scheme, the number of the first uniform flow nozzles is 50-3000, and the aperture is 0.1-30 mm; the number of the second uniform flow nozzles is 50-4000, and the aperture is 0.1-20 mm.
As a further preferable scheme, the first flow-homogenizing nozzle and the second flow-homogenizing nozzle are obliquely arranged, and the inclination angle is 10-20 degrees.
The high-uniformity gas path system applied to the plasma processing device comprises a gas inlet and exhaust system with a plurality of uniform flow cavities, and can be better applied to plasma etching equipment, plasma coating equipment and the like of a semiconductor; the efficiency of air inlet and air exhaust of the gas system is improved, the uniformity of air inlet and air exhaust is enhanced, and the process effect is greatly improved.
Drawings
FIG. 1 is a schematic view of the overall structure of the present invention;
in the figure: the air-purifying device comprises a first air inlet 1, a first air inlet 2, a top cover 3, a first uniform flow bottom plate 4, a first uniform flow nozzle 5, a second air inlet 6, a second uniform flow bottom plate 7 and a second uniform flow nozzle 8, a cavity 9, a ceramic lining 10 and an air exhaust channel.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
As shown in FIG. 1, the invention discloses a high uniformity gas circuit system applied in an Atomic Layer Etching (ALE) equipment device, which comprises a gas inlet uniform flow part and a gas exhaust uniform flow part. The air inlet uniform flow part comprises a top cover 2, a first air inlet 1, a first uniform flow bottom plate 3, a first uniform flow nozzle 4, a second air inlet 5, a second uniform flow bottom plate 6 and a second uniform flow nozzle 7. The pumping part comprises a chamber 8, a pumping channel 10 and a ceramic lining 9.
A plurality of through holes are distributed on the ceramic lining, and ceramic nozzles can be installed on the through holes; the air-pumping uniform flow cavity is arranged in the side wall of the process cavity, is provided with an air-pumping hole and an air-pumping channel for communicating the air-pumping uniform flow cavity with external pumping vacuum equipment. The invention has simple structure, can uniformly mix various process gases through the diameter, the number and the arrangement of each uniform flow cavity and the uniform flow nozzles, is convenient to use, and meets the requirements of high-precision control and large-area etching uniformity
The top cover and the first uniform flow bottom plate form a first uniform flow cavity, and the first uniform flow bottom plate and the second uniform flow bottom plate form a second uniform flow cavity. The process gas introduced through the first gas inlet enters the first uniform flow cavity and directly enters the process cavity through the first uniform flow nozzle on the first uniform flow bottom plate; the process gas introduced through the second gas inlet enters the second uniform flow cavity and enters the process chamber through the second uniform flow nozzle on the second uniform flow bottom plate.
The process gas is mixed in the chamber and fully reacts with the wafer, then is pumped out of the chamber through small pumping holes uniformly distributed on the ceramic lining, and finally is pumped out of the vacuum chamber through a plurality of pumping channels uniformly distributed on the chamber. The structure can effectively prevent the two gases from being mixed before entering the cavity, and can improve the uniformity, thereby improving the process control precision of Atomic Layer Etching (ALE) equipment.
The diameter and the distribution of the first uniform flow nozzles on the first uniform flow bottom plate can be changed according to requirements, for example, the diameter of the nozzles can be switched from 1mm to 0.5mm, and the arrangement of the nozzles can be adjusted by switching the nozzles at specific positions to plugs; similarly, the diameter and the distribution of the second uniform flow nozzles on the second uniform flow bottom plate can also be changed according to needs, for example, the diameter of the nozzles can be switched from 1mm to 0.5mm, or the arrangement of the nozzles can be adjusted by switching the nozzles at specific positions to plugs; the adjustment of the uniformity may even be achieved by adjusting the angle of the nozzle relative to the chamber, for example a nozzle angle of 10-20.
The ceramic lining is directly matched with the cavity, and a certain number of small air exhaust holes are uniformly distributed on the side wall of the ceramic lining. The size, number and distribution of the pumping small holes can be determined according to the process requirements. A plurality of 10 air extraction holes are uniformly distributed on the lower surface of the chamber, and the air extraction holes are communicated with a vacuum pump attached to the machine table. The process gas which is reacted with the Wafer or has not reacted with the Wafer in the cavity enters the air-pumping uniform flow cavity between the ceramic lining and the cavity under the vacuum negative pressure, and the uniform flow cavity can play a role in buffering and has the function of preventing the high pumping speed of the vacuum pump from generating excessive interference on the uniformity of the gas in the cavity. The structure can meet the requirement of rapid air exhaust in the cavity, and simultaneously can also maintain the high uniformity of the distribution of the process gas in the cavity, thereby achieving the purpose of rapid and uniform air exhaust.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (3)
1. The utility model provides a high homogeneity gas circuit system for among plasma processing apparatus which characterized in that: the novel uniform flow type water heater comprises a hollow base with an upward opening, steps are arranged on the side wall of the hollow base, a second uniform flow bottom plate (6) is covered and arranged at the opening of the hollow base, second uniform flow nozzles (7) leading to the interior of the hollow base are distributed on the second uniform flow bottom plate (6), the second uniform flow bottom plate (6) is of an inwards concave structure, a first uniform flow bottom plate (3) is covered and arranged at the upper part of the second uniform flow bottom plate, first uniform flow nozzles (4) are distributed on the first uniform flow bottom plate (3), the first uniform flow nozzles (4) penetrate through the second uniform flow bottom plate (6) and lead to the interior of the hollow base, a top cover (2) is arranged on the first uniform flow bottom plate (3), the top cover (2) is of an inwards concave structure, a concave cover of the top cover is closed on the first uniform flow bottom plate (3), first air inlets (1) leading to the space between the top cover (2) and the first uniform flow bottom plate (3) are arranged on the top cover (2), and first air inlets leading to the space between the first uniform flow bottom plate (3) and the second uniform flow bottom plate (6) are further arranged on the top cover (2) A second air inlet (5); the inner hollow base is internally provided with an annular ceramic lining (9), the first uniform flow nozzle (4) and the second uniform flow nozzle (7) are communicated into an annular structure of the ceramic lining (9), a cavity (8) is formed between the ceramic lining (9) and a step on the side wall of the inner hollow base, through holes communicated with the cavity (8) are distributed in the annular periphery of the ceramic lining (9), and the bottom of the inner hollow base is further provided with an air extraction channel (10) communicated with the cavity (8).
2. The high uniformity gas path system applied to the plasma processing device according to claim 1, wherein: the number of the first uniform flow nozzles (4) is 50-3000, and the aperture is 0.1-30 mm; the number of the second uniform flow nozzles (7) is 50-4000, and the aperture is 0.1-20 mm.
3. A high uniformity gas circuit system for use in a plasma processing apparatus according to claim 1 or 2, wherein: the first flow-homogenizing nozzle (4) and the second flow-homogenizing nozzle (7) are obliquely arranged, and the inclination angle is 10-20 degrees.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010553300.8A CN113808899B (en) | 2020-06-17 | 2020-06-17 | High-uniformity gas circuit system applied to plasma processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010553300.8A CN113808899B (en) | 2020-06-17 | 2020-06-17 | High-uniformity gas circuit system applied to plasma processing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113808899A true CN113808899A (en) | 2021-12-17 |
| CN113808899B CN113808899B (en) | 2024-07-05 |
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| CN202010553300.8A Active CN113808899B (en) | 2020-06-17 | 2020-06-17 | High-uniformity gas circuit system applied to plasma processing device |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030168172A1 (en) * | 2002-03-11 | 2003-09-11 | Yuri Glukhoy | Plasma treatment apparatus with improved uniformity of treatment and method for improving uniformity of plasma treatment |
| CN206418196U (en) * | 2016-07-26 | 2017-08-18 | 北京中科优唯科技有限公司 | A kind of even gas upper lower burrs components of the MOCVD of H types shower nozzle |
| CN107326341A (en) * | 2017-07-14 | 2017-11-07 | 君泰创新（北京）科技有限公司 | The even device of air of LPCVD process cavities |
| CN110904436A (en) * | 2018-09-14 | 2020-03-24 | 北京北方华创微电子装备有限公司 | Uniform flow piece, process chamber, atomic layer deposition equipment and deposition method |
| CN111101117A (en) * | 2018-10-29 | 2020-05-05 | 北京北方华创微电子装备有限公司 | Gas uniformizing device and semiconductor processing equipment |
-
2020
- 2020-06-17 CN CN202010553300.8A patent/CN113808899B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030168172A1 (en) * | 2002-03-11 | 2003-09-11 | Yuri Glukhoy | Plasma treatment apparatus with improved uniformity of treatment and method for improving uniformity of plasma treatment |
| CN206418196U (en) * | 2016-07-26 | 2017-08-18 | 北京中科优唯科技有限公司 | A kind of even gas upper lower burrs components of the MOCVD of H types shower nozzle |
| CN107326341A (en) * | 2017-07-14 | 2017-11-07 | 君泰创新（北京）科技有限公司 | The even device of air of LPCVD process cavities |
| CN110904436A (en) * | 2018-09-14 | 2020-03-24 | 北京北方华创微电子装备有限公司 | Uniform flow piece, process chamber, atomic layer deposition equipment and deposition method |
| CN111101117A (en) * | 2018-10-29 | 2020-05-05 | 北京北方华创微电子装备有限公司 | Gas uniformizing device and semiconductor processing equipment |
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| CN113808899B (en) | 2024-07-05 |
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Country or region after: China Address after: No. 8 Liaohe West Road, Pizhou Economic Development Zone, Xuzhou City, Jiangsu Province, 221330 Applicant after: Jiangsu Luwen Instrument Co.,Ltd. Address before: 221300 No.8, Liaohe West Road, Pizhou Economic Development Zone, Xuzhou City, Jiangsu Province Applicant before: JIANGSU LEUVEN INSTRUMMENTS Co.,Ltd. Country or region before: China |
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