CN216054569U - Cavity of plasma etching machine - Google Patents
Cavity of plasma etching machine Download PDFInfo
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- CN216054569U CN216054569U CN202121966773.7U CN202121966773U CN216054569U CN 216054569 U CN216054569 U CN 216054569U CN 202121966773 U CN202121966773 U CN 202121966773U CN 216054569 U CN216054569 U CN 216054569U
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Abstract
The utility model provides a cavity of a plasma etcher, which comprises a molecular pump, an air inlet, an air exhaust port, an air homogenizing disc and a carrying disc, wherein the air inlet is positioned at the top of the cavity, the air exhaust port is positioned at the side wall of the cavity, the molecular pump is positioned at the air exhaust port, the air homogenizing disc is provided with a plurality of vent holes, the vent holes are annularly distributed in an inner circle and an outer circle, and the opening positions, the pore sizes, the opening directions, the opening angles or the intervals of the vent holes can be adjusted, so that reaction gas led into the cavity through the air inlet is led out of the cavity after being evenly distributed, and therefore, the effects of improving the etching speed of a whole disc wafer and improving the etching uniformity of plasma are achieved.
Description
Technical Field
The utility model relates to the technical field of microelectronics, in particular to a cavity of a plasma etcher.
Background
Etching is an important component of microfabrication technology, and rapid development of microelectronics has promoted its ongoing development. Generally speaking, the etching technology can be divided into dry etching and wet etching, the initial etching is mainly wet etching, but the wet etching is difficult to meet the higher and higher precision requirements as the device manufacture enters the micron and submicron times. Dry etching generally removes the etched film by a combination of physical and chemical aspects. There are many kinds of common dry etching methods, and the working principle is that etching gas is glow-discharged in an inductive coupling mode to generate active free radicals, metastable particles, atoms and the like, and bias voltage is provided in a reaction chamber to provide energy for plasma, so that the plasma vertically acts on a wafer, reacts with the wafer to generate volatile gaseous substances, and is pumped away by air pumping equipment. The dry etching has the advantages of high etching speed, high selectivity ratio, good anisotropy, small etching damage, good large-area uniformity, high controllability of the profile of an etched section, smooth and flat etched surface and the like, is simple to operate and convenient for automatic control, and can meet the requirements of manufacturing various microstructure devices such as super-large-scale integrated circuits, MEMS (micro-electro-mechanical systems), optoelectronic devices and the like.
With the development of technology, the requirements for plasma etching are higher and higher, wherein uniformity is a main parameter describing etching effect. The main factor influencing the uniformity is the distribution of plasma in the reaction cavity, and the structure of the cavity and the design of the gas inlet part jointly determine the distribution of the plasma. In the etching system that exists at present, the extraction opening structure is located one side of cavity, reaction gas gets into the cavity through the air inlet, later make gas at the inside dispersion of cavity even through the air vent on the even gas dish, nevertheless the extraction structure is located cavity one side, this causes the wafer surface can't evenly contact reaction gas when air pumping system takes away gas from the extraction opening in the course of the technology easily, especially keep away from the wafer surface contact reaction gas in the extraction opening region not enough, this regional wafer etching rate is slower, the etching effect is not good, finally influence the sculpture homogeneity.
Disclosure of Invention
In view of the above, the present invention provides a chamber of a plasma etcher, so as to solve the problems of a conventional etching chamber that a wafer is not uniformly contacted with a reaction gas, which causes a slow etching rate of the wafer, and a poor etching uniformity of the wafer.
The technical scheme adopted by the utility model is as follows: the utility model provides a cavity of plasma etching machine, includes molecular pump, air inlet, extraction opening, even gas dish, carries the dish, the air inlet is located the cavity top, the extraction opening is located cavity lateral wall department, the molecular pump is located extraction opening department, it has a plurality of air vents to open on the even gas dish, the air vent is the annular distribution for inside and outside two circles, open position, aperture size, opening direction, opening angle or the interval of air vent are adjustable, so that pass through the air inlet is leading-in derive the cavity behind the reactant gas uniform shunting of cavity.
Preferably, the cavity is cylindrical, and the gas homogenizing disc is circular.
Preferably, the vent holes are through holes penetrating through the upper surface and the lower surface of the gas homogenizing disc.
Preferably, the distance between the vent hole on the side far away from the pumping opening and the side wall of the cavity is smaller than the distance between the vent hole on the side close to the pumping opening and the side wall of the cavity.
Preferably, the aperture of the vent hole on the side far from the air extraction opening is larger than that of the vent hole on the side near the air extraction opening, and the aperture of the vent hole increases with the distance from the air extraction opening.
Preferably, the opening direction of the vent hole close to the air extraction opening is vertical downward, the opening direction of the vent hole far away from the air extraction opening is opposite to the direction of the air extraction opening, and the opening angle is increased along with the increase of the distance between the vent hole and the air extraction opening.
Preferably, the vent holes close to the suction port area are distributed sparsely, and the vent holes far away from the suction port area are distributed densely.
Preferably, the aperture of the vent hole on the gas homogenizing disc is 1-10 mm.
Preferably, the material of the gas homogenizing disc body is alumina ceramic, quartz, silicon oxide, silicon nitride or aluminum alloy.
The utility model discloses a cavity of a plasma etcher, which is characterized in that vent holes on a gas homogenizing disc in the cavity are adjusted
The opening position, the aperture size, the opening direction, the opening angle or the interval can effectively solve the problems of low wafer etching rate and poor etching uniformity caused by uneven distribution of reaction gas in the cavity and uneven contact between the wafer and the reaction gas. In the process of plasma etching, reaction gas enters the cavity through the gas inlet and becomes uniform through the vent holes in the gas homogenizing disc, so that wafers in the cavity can be uniformly contacted with the reaction gas, the etching rate of the wafers on the whole disc is increased, and the etching uniformity of the plasma is improved.
Additional advantages, objects, and features of the utility model will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the utility model. The objectives and other advantages of the utility model will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
It will be appreciated by those skilled in the art that the objects and advantages that can be achieved with the present invention are not limited to the specific details set forth above, and that these and other objects that can be achieved with the present invention will be more clearly understood from the detailed description that follows.
Drawings
The accompanying drawings, which are included to provide a further understanding of the utility model and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the utility model and together with the description serve to explain the principles of the utility model. The components in the figures are not necessarily to scale, emphasis instead being placed upon illustrating the principles of the utility model. For purposes of illustrating and describing some portions of the present invention, corresponding parts of the drawings may be exaggerated, i.e., may be larger, relative to other components in an exemplary apparatus actually manufactured according to the present invention. In the drawings:
FIG. 1 is a schematic view of a vent hole on a gas distribution plate in an etching chamber in the prior art.
FIG. 2 is a schematic diagram of the distribution of the etching gas flow in the actual case.
FIG. 3 is a schematic view of the distribution of the flow of the etching gas in an ideal state.
Fig. 4 is a schematic view of the vent holes on the gas distribution plate according to an embodiment of the utility model.
FIG. 5 is a schematic view of the vent holes on the gas distribution plate according to an embodiment of the utility model.
FIG. 6 is a schematic view of the vent holes on the gas distribution plate according to an embodiment of the utility model.
FIG. 7 is a schematic view of the vent holes on the gas distribution plate according to an embodiment of the utility model.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the embodiments of the present invention are further described in detail below with reference to the accompanying drawings. The exemplary embodiments and descriptions of the present invention are provided to explain the present invention, but not to limit the present invention.
It should be noted that, in order to avoid obscuring the present invention with unnecessary details, only the structures and/or processing steps closely related to the scheme according to the present invention are shown in the drawings, and other details not closely related to the present invention are omitted.
It should be emphasized that the term "comprises/comprising/comprises/having" when used herein, is taken to specify the presence of stated features, elements, steps or components, but does not preclude the presence or addition of one or more other features, elements, steps or components.
It should be noted that the terms of orientation and orientation used in the present specification are relative to the position and orientation shown in the drawings; the term "coupled" herein may mean not only directly coupled, but also indirectly coupled, in which case intermediates may be present, if not specifically stated. A direct connection is one in which two elements are connected without the aid of intermediate elements, and an indirect connection is one in which two elements are connected with the aid of other elements.
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the drawings, like reference characters designate the same or similar parts throughout the several views.
Fig. 1 is a schematic view of vent holes on an air distribution plate in an etching chamber in the prior art, an air suction port 300 is located on the inner wall of one side of the chamber 100, vent holes 400 are arranged on the air distribution plate 200, the vent holes 400 are distributed in a concentric circular shape, and the aperture size and the distance of the vent holes are the same. The problem that the gas flow close to the air suction opening 300 is high, the reaction rate of wafer etching is high, the gas flow far away from the air suction opening 300 is low, the reaction rate of wafer etching is low, and the reaction gas inside the cavity 100 is not uniformly distributed, so that the contact between the wafer and the reaction gas is not uniform, the etching rate of the whole wafer is low, and the etching uniformity is poor exists in the etching cavity in the prior art.
Fig. 2 is a schematic diagram illustrating the distribution of etching gas flow in a practical situation of the prior art, wherein the reaction gas 700 enters the chamber 100 through the gas inlet 500 and is transmitted to the carrier plate 600 through the vent holes 400 of the gas distribution plate 200 to react with the wafer, but the distribution of the reaction gas 700 inside the chamber 100 is not uniform. Figure 3 is a schematic diagram of the distribution of the flow of etching gas in an ideal state. In order to achieve the etching gas flow distribution under an ideal state, the embodiment discloses a cavity of a plasma etching machine, which comprises a molecular pump, a gas inlet 500, a pumping port 300, a gas distribution plate 200 and a carrying plate 600, wherein the gas inlet 500 is positioned at the top of the cavity, the pumping port 300 is positioned at the side wall of the cavity, the molecular pump is positioned at the pumping port 300, the gas distribution plate 200 is provided with a plurality of vent holes 400, the vent holes 400 are annularly distributed for an inner circle and an outer circle, and the opening positions, the aperture sizes, the opening directions, the opening angles or the intervals of the vent holes 400 are adjustable, so that the reaction gas 700 introduced into the cavity 100 through the gas inlet 500 is uniformly distributed and then is led out of the cavity.
Example 1
Fig. 4 is a schematic view of the vent holes on the gas distribution plate in this embodiment, the pumping hole 300 is located on a side wall of the chamber 100, and a distance between the vent hole 400 far away from the pumping hole 300 and the side wall of the chamber 100 is smaller than a distance between the vent hole 400 near the pumping hole 300 and the side wall. The position of the reaction gas 700 introduced into the chamber 100 is changed by reducing the distance between the vent hole 400 far away from the pumping hole 300 and the chamber 100, so that the defects of small reaction gas flow and low wafer etching rate of the region far away from the pumping hole 300 are compensated, and the distribution uniformity of the reaction gas and the wafer etching uniformity are improved.
In this embodiment, the cavity 100 is cylindrical, and the gas distribution plate 200 is circular.
The vent holes 400 in this embodiment are through holes that penetrate the upper and lower surfaces of the gas distribution plate 200.
The aperture of the vent holes 400 on the gas homogenizing plate 200 in this embodiment is 1-10 mm.
Example 2
In the present embodiment, the pumping hole 300 is located on a side wall of the chamber 100, referring to fig. 5, the aperture of the vent hole 400 located at a side far from the pumping hole 300 is larger than the aperture of the vent hole 400 located at a side close to the pumping hole 300, and the aperture of the vent hole 400 gradually increases with the distance from the pumping hole 300. The gas flow is increased by increasing the vent hole diameter in the region away from the pumping hole 300, so as to balance the reaction gas inside the chamber 100 and improve the etching rate and uniformity of the wafer and the reaction gas.
Like embodiment 1, the chamber 100 of this embodiment has a cylindrical inner shape, and the gas distribution plate 200 has a circular shape.
The vent holes 400 in this embodiment are through holes that penetrate the upper and lower surfaces of the gas distribution plate 200.
The aperture of the vent holes 400 on the gas homogenizing plate 200 in this embodiment is 1-10 mm.
Example 3
Fig. 6 is a schematic diagram of the internal structure of the chamber of the plasma etcher in this embodiment, in which the gas inlet 500 is disposed at the top of the chamber 100, the pumping hole 300 is disposed at the sidewall of the chamber 100, the opening direction of the vent hole close to the pumping hole 300 is downward, the opening direction of the vent hole far from the pumping hole 300 is opposite to the direction of the pumping hole 300, and the deviation angle of the opening of the vent hole 400 increases with the distance between the vent hole 400 and the pumping hole 300, and the distribution state of the reaction gas in the chamber is adjusted by adjusting the angle of the vent hole 400, so that the distribution of the reaction gas is more uniform, and the etching rate and uniformity of the wafer are improved.
Like embodiment 1, the chamber 100 of this embodiment has a cylindrical inner shape, and the gas distribution plate 200 has a circular shape.
The vent holes 400 in this embodiment are through holes that penetrate the upper and lower surfaces of the gas distribution plate 200.
The aperture of the vent holes 400 on the gas homogenizing plate 200 in this embodiment is 1-10 mm.
Example 4
Fig. 7 is a schematic view of the vent holes on the gas uniformizing plate in this embodiment, the pumping holes 300 are located on a side wall of the chamber 100, the vent holes 400 near the pumping holes 300 are sparsely distributed and arranged, and the vent holes 400 far from the pumping holes 300 are densely distributed and arranged, so that the distribution of the reaction gas inside the chamber is adjusted by adjusting the angles of the vent holes 400 in different regions, so as to make the distribution of the reaction gas more uniform, thereby improving the etching rate and uniformity of the wafer.
Like embodiment 1, the chamber 100 of this embodiment has a cylindrical inner shape, and the gas distribution plate 200 has a circular shape.
The vent holes 400 in this embodiment are through holes that penetrate the upper and lower surfaces of the gas distribution plate 200.
The aperture of the vent holes 400 on the gas homogenizing plate 200 in this embodiment is 1-10 mm.
In the above embodiments, the material of the gas distribution plate 200 is alumina ceramic, quartz, silicon oxide, silicon nitride or aluminum alloy.
The above-listed embodiments illustrate and describe the basic principles and main features of the present invention, but the present invention is not limited to the above-mentioned embodiments, and in the present invention, one of the modification or the combination of the opening position, the aperture size, the opening direction, the opening angle or the distance of the vent holes on the gas distribution plate inside the etching chamber is covered by the protection scope of the present invention.
Claims (9)
1. The utility model provides a cavity of plasma etching machine, includes molecular pump, air inlet, extraction opening, even gas dish, carries the dish, the air inlet is located the cavity top, the extraction opening is located cavity lateral wall department, the molecular pump is located extraction opening department, it has a plurality of air vents to open on the even gas dish, the air vent is the annular distribution for inside and outside two circles, its characterized in that, the opening position, aperture size, opening direction, opening angle or the interval of air vent are adjustable, so that pass through the air inlet is leading-in derive the cavity after the reactant gas of cavity evenly shunts.
2. The chamber of claim 1, wherein the chamber is cylindrical and the gas distribution plate is circular.
3. The chamber of claim 1, wherein the vent holes are through holes penetrating the upper surface and the lower surface of the gas distribution plate.
4. The chamber of claim 1, wherein a distance between the vent hole on a side away from the pumping port and the sidewall of the chamber is smaller than a distance between the vent hole on a side close to the pumping port and the sidewall of the chamber.
5. The chamber of claim 1, wherein the diameter of the vent hole on the side away from the pumping port is larger than the diameter of the vent hole on the side close to the pumping port, and the diameter of the vent hole increases with the distance from the pumping port.
6. The chamber of claim 1, wherein the direction of the opening of the vent hole is vertically downward, the direction of the opening of the vent hole is opposite to the direction of the pumping hole, and the opening angle increases with the distance between the vent hole and the pumping hole.
7. The chamber of claim 1, wherein the distribution of the vent holes near the area of the gas exhaust port is sparse and the distribution of the vent holes far away from the area of the gas exhaust port is dense.
8. The chamber of claim 1, wherein the diameter of the vent holes on the gas distribution plate is 1-10 mm.
9. The chamber of claim 1, wherein the material of the gas distribution plate is alumina ceramic, quartz, silicon oxide, silicon nitride or aluminum alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121966773.7U CN216054569U (en) | 2021-08-20 | 2021-08-20 | Cavity of plasma etching machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121966773.7U CN216054569U (en) | 2021-08-20 | 2021-08-20 | Cavity of plasma etching machine |
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| Publication Number | Publication Date |
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| CN216054569U true CN216054569U (en) | 2022-03-15 |
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| CN202121966773.7U Active CN216054569U (en) | 2021-08-20 | 2021-08-20 | Cavity of plasma etching machine |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116453925A (en) * | 2023-06-16 | 2023-07-18 | 通威微电子有限公司 | Magnetic control enhanced plasma polishing device |
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2021
- 2021-08-20 CN CN202121966773.7U patent/CN216054569U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116453925A (en) * | 2023-06-16 | 2023-07-18 | 通威微电子有限公司 | Magnetic control enhanced plasma polishing device |
| CN116453925B (en) * | 2023-06-16 | 2023-08-25 | 通威微电子有限公司 | Magnetic control enhanced plasma polishing device |
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