CN112908821B - Double-station processor for realizing uniform exhaust and exhaust method thereof - Google Patents
Double-station processor for realizing uniform exhaust and exhaust method thereof Download PDFInfo
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- CN112908821B CN112908821B CN201911227802.5A CN201911227802A CN112908821B CN 112908821 B CN112908821 B CN 112908821B CN 201911227802 A CN201911227802 A CN 201911227802A CN 112908821 B CN112908821 B CN 112908821B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Abstract
The invention discloses a duplex processor for realizing uniform exhaust and an exhaust method thereof, wherein the duplex processor comprises: the double-station processor also comprises a rotating ring arranged below the limiting ring, the rotating ring is provided with a plurality of blocking areas, the blocking areas correspond to partial gas channels of the limiting ring, and the corresponding positions of the blocking areas and the gas channels are adjusted along with the rotation of the rotating ring. The invention changes the air flow distribution of the exhaust area by partial blocking of the rotating ring, and simultaneously realizes the symmetry of the gas flow field by adopting asymmetric rotating speed.
Description
Technical Field
The invention relates to the field of semiconductor equipment, in particular to a double-station processor for realizing uniform exhaust and an exhaust method thereof.
Background
In the equipment for processing the semiconductor substrate by using the reaction gas, such as plasma etching equipment, the reaction gas is dissociated into plasma in the reaction cavity to carry out process processing on the semiconductor substrate, the precision requirement of the processing process is continuously improved along with the gradual increase of the size of the semiconductor substrate, and the uniformity degree of the processing of the semiconductor substrate becomes a key parameter for measuring whether one piece of semiconductor equipment is qualified or not.
The semiconductor equipment has a complex internal environment, in order to improve the efficiency of substrate processing, at least two reaction cavities can be arranged on one piece of processing equipment, each reaction cavity at least comprises a reaction cavity 70 enclosed by the outer wall 71 of the reaction cavity, and a base 30 for supporting the substrate is arranged in the reaction cavity and has a temperature regulation function; a gas inlet element 20 for controlling the reaction gas to enter the reaction chamber, an external radio frequency source 50 for providing energy for dissociating the reaction gas into plasma; and an exhaust device 40 for exhausting the reaction by-products out of the reaction chamber while maintaining the pressure in the reaction chamber. All of which can affect the uniformity of the semiconductor substrate processing results. The temperature adjusting function of the control base, the uniform air intake of the air intake element and the uniform electric field distribution of the external radio frequency source in the reaction cavity can effectively adjust the etching uniformity of the semiconductor substrate, however, the exhaust uniformity of the exhaust device can also have obvious influence on the etching uniformity result of the semiconductor substrate but is often ignored by people.
As shown in fig. 1, in the conventional semiconductor apparatus, in order to maintain the pressure balance in the reaction chamber, a plasma confinement device 10 is generally disposed at a position downstream of the reaction chamber, and the plasma confinement device can allow the reaction by-products of the gases to be exhausted from the reaction chamber, and simultaneously confine the plasma in the reaction chamber to the working region of the plasma. Gas confinements are typically disposed about the susceptor and include a body and a plurality of holes or slot passages extending through the body to allow for the venting of gaseous byproducts. An exhaust 40 is located below the adjacent region of the plasma confinement device 10 in the two reaction chambers, the region between the plasma confinement device 10 and the exhaust 40 being the exhaust region, the exhaust region surrounding the susceptor at the center of the reaction chamber. In order to ensure synchronous operation of the treatment processes in the different reaction chambers, the exhaust regions of a plurality of reaction chambers are often arranged in fluid communication and are in fluid communication with the common exhaust 40. Therefore, the exhaust device can only be disposed below the adjacent side walls of the two reaction chambers, and the communication between the reaction chambers and the exhaust device 40 is realized through an opening 45, which inevitably causes different lengths of paths from the plasma confinement devices 10 to the exhaust device 40 at different positions, and causes different pressures below different plasma confinement devices 10, thereby affecting the uniformity of gas distribution on the surface of the semiconductor substrate and reducing the qualification rate of the semiconductor substrate.
Disclosure of Invention
The invention aims to provide a double-station processor for realizing uniform exhaust and an exhaust method thereof.
In order to achieve the purpose, the invention is realized by the following technical scheme:
a dual site processor for achieving uniform venting, said dual site processor comprising: two adjacently arranged plasma processing chambers, and a shared exhaust pump, wherein a susceptor for supporting a substrate is disposed in each plasma processing chamber, a confinement ring is disposed in each plasma processing chamber around the periphery of the susceptor, an exhaust region is disposed below the confinement ring, the confinement ring has a plurality of gas passages for exhausting gas to the exhaust region, the exhaust regions of the two plasma processing chambers are at least partially adjacent to each other and in fluid communication with each other to form an adjacent vent region, the shared exhaust pump is disposed below the adjacent vent region and in fluid communication with the exhaust region of each plasma processing chamber, each confinement ring comprises a first region and a second region, the first region is a region corresponding to a region above the adjacent vent region, and the second region is a region other than the first region, the dual-station processor further comprises a rotating ring, the rotating ring is disposed below the confinement ring, the rotating ring has a plurality of blocking regions, and the plurality of regions correspond to a portion of the gas passages of the confinement ring.
Optionally, the rotating ring is further provided with a plurality of air-permeable areas, and a blocking area is formed between two adjacent air-permeable areas.
Optionally, the surface area of the blocking region of the rotating ring below the confinement ring first region is greater than the surface area of the blocking region of the rotating ring below the confinement ring second region.
Optionally, the blocking region is located below the confinement ring first region.
Optionally, during one rotation of the rotating ring, the residence time of the blocking area of the rotating ring below the gas passage in the first area of the confinement ring is longer than the residence time of the blocking area below the gas passage in the second area of the confinement ring.
Optionally, the rotating ring comprises: an inner edge and an outer edge, the barrier region being disposed between the inner edge and the outer edge.
A method of achieving uniform venting using the dual-site processor, the method comprising:
adjusting the corresponding position of the blocking area of the rotating ring and the gas channel of the limiting ring when the rotating ring rotates according to the current process and the gas flow distribution in the plasma processing chamber;
and adjusting the gas flow distribution of the exhaust area below the whole limiting ring by adjusting the corresponding position relation between the blocking area and the gas channel of the part of the limiting ring.
Optionally, during one rotation of the rotating ring, the residence time of the blocking area of the rotating ring below the gas passage in the first area of the confinement ring is longer than the residence time of the blocking area below the gas passage in the second area of the confinement ring.
Optionally, the adjusting the exhaust area gas flow distribution below the entire confinement ring includes making the exhaust area gas flow distribution uniform.
A plasma processing device for realizing uniform exhaust is characterized by comprising the double-station processors, wherein the gas injection device in each plasma processing chamber of each double-station processor is connected to a reaction gas source.
Compared with the prior art, the invention has the following advantages:
according to the invention, the rotating ring is arranged below the limiting ring, the air flow distribution of an exhaust area is changed through partial blocking of the rotating ring, and meanwhile, the gas flow field is symmetrical by adopting an asymmetric rotating speed;
the rotating speed of the rotating ring is controllable, and the opening rate of each part of gas channels of the limiting ring can be dynamically adjusted, so that the uniform exhaust requirements of all process procedures are met;
the uniformity of the distribution of the reaction gas on the surface of the substrate in the reaction cavity of the plasma processing equipment is improved, the etching uniformity of the substrate is improved, and the qualification rate of the substrate is improved.
Drawings
FIG. 1 is a cross-sectional view of a prior art plasma reactor;
FIG. 2 is a sectional view of a plasma processing apparatus having dual reaction chambers according to the present invention;
FIG. 3 is a top view of a plasma processing apparatus having two reaction chambers according to the present invention;
FIG. 4 is a bottom view of a rotating ring according to an embodiment of the present invention;
FIGS. 5 and 6 are schematic views of the spin ring of FIG. 4 when used in a plasma processing apparatus;
FIG. 7 is a bottom view of a rotating ring according to another embodiment of the present invention.
Detailed Description
The present invention will be further described by the following detailed description of a preferred embodiment thereof, which is to be read in connection with the accompanying drawings.
Fig. 2 is a cross-sectional view of a plasma processing apparatus having dual reaction chambers according to an embodiment of the present invention, and in another embodiment, the number of the reaction chambers of the plasma processing apparatus may be more than two, and the operation principle and the exhaust structure thereof are similar to the dual reaction chamber structure.
In the plasma reactor 100 shown in fig. 2, two reaction chambers are adjacently arranged, which are respectively surrounded by reaction chamber walls 101 and 101' and have an adjacent sidewall 105, during the plasma process, the plasma reactor 100 is usually configured as a vacuum environment, when the process starts, a gas injection device injects the reaction gas in the reaction gas source 160 into the plasma reactor 100, the gas injection device can have various forms, and can be configured as a flat plate gas shower head or other structures according to different processes and specific structures of the reaction chambers. A susceptor 130 and 130' for supporting the semiconductor substrate 135 is disposed below the gas showerheads 120 and 120', respectively, and typically an electrostatic chuck 133 and 133' is disposed above the susceptor 130 and 130', respectively, to secure the semiconductor substrate 135 during processing by an electrostatic attraction generated by the electrostatic chuck 133 and 133 '. The generally cylindrical shape of the susceptors 130 and 130' is located at the center of the bottom of the reaction chamber to provide a more symmetrical process environment, which is beneficial to the smooth process of the reaction. The rf power source systems 150 and 150' act on the susceptors 130 and 130', and between the showerhead 120 and the susceptors 130, the showerhead 120' and the susceptors 130' generate electric fields, dissociate the reaction gases injected from the showerhead 120 and the showerhead 120' into plasma, and sustain the plasma to act on the semiconductor substrate. A confinement ring 110 is disposed around the base 130 and a confinement ring 110 'is disposed around the base 130'. The region above the level of the confinement rings 110 and 110 'is the plasma processing regions 102 and 102', and the region below the confinement rings 110 and 110 'is the exhaust regions 103 and 103'. The exhaust regions of the plurality of plasma processing chambers are at least partially adjacent to each other and in fluid communication with each other to form an adjacent plenum, and an opening 145 is provided below the adjacent sidewalls 105 of two chambers to allow communication between the two chamber exhaust regions 103 and 103'; the opening 145 simultaneously penetrates through the bottoms of the adjacent areas of the two reaction chambers, and an exhaust pump 140 is arranged below the adjacent ventilation areas, so that the two reaction chambers share one exhaust pump, and the exhaust pump is used for exhausting gas byproducts generated by the reaction process out of the reaction chambers.
Since the two reaction chambers have substantially the same structure, the structure of one reaction chamber will be described in detail. The confinement ring 110 disposed around the susceptor 130 includes a substantially annular flow guide body 111 and a plurality of gas passages 112 disposed in the flow guide body 111 to facilitate passage of spent reactant and byproduct gases including charged and neutral particles in the processing region 102 into the exhaust region 103, the gas passages 112 being sized to neutralize the charged particles in the plasma while allowing the neutral particles to pass therethrough when the charged particles pass through the gas passages 112. Since the exhaust regions 103 and 103 'are annular regions surrounding the susceptor 130 and the susceptor 130', since the two reaction chambers share one exhaust pump 140, in order to ensure the symmetry of the exhaust rates of the two reaction chambers, the exhaust pump 140 is disposed below the adjacent sidewalls 105 of the two reaction chambers, which necessarily causes different paths of the gases to the opening 145 at different positions of the exhaust regions 103 and 103 'of the two reaction chambers, so that the exhaust region gases near the opening 145 are exhausted from the reaction chambers through the exhaust pump along the route a at a faster exhaust rate, where the region has a lower gas pressure, and the used reactant gases and byproduct gases above the corresponding confinement rings 110 and 110' of the region enter the exhaust regions 103 and 103 'through gas passages, and the exhaust region gases far from the opening 145 are exhausted from the reaction chambers through the exhaust pump 140 along the route B at a slower exhaust rate, where the region has a higher gas pressure, and the used reactant gases and byproduct gases above the corresponding confinement rings 110 and 110' of the region enter the exhaust regions through the gas passages slower, which leads to uneven distribution of the used reactant gases and byproduct gases in the processing regions 102 'above the confinement rings and 102' of the corresponding to the substrate.
Fig. 3 is a plan view of a plasma processing apparatus having two reaction chambers according to the present invention, in which two adjacent reaction chambers are arranged in parallel, adjacent venting regions of the two reaction chambers are shown within a circular dotted line, and the exhaust pump is disposed below the adjacent venting regions, wherein each confinement ring 110 includes a first region 1101 and 1101 'above the adjacent venting regions and a second region 1102 and 1102' above a region other than the adjacent venting regions.
FIG. 4 is a bottom view of the rotating ring in accordance with one embodiment of the present invention; fig. 5 and 6 are schematic views of the rotating ring of fig. 4 positioned below the confinement rings of the plasma processing apparatus. Referring to fig. 5 and 6 in conjunction with fig. 2, a rotating ring 20 and a rotating ring 20 'are provided below the confinement rings 110 and 110', respectively. Fig. 5 and 6 illustrate an example in which a rotating ring is provided below the confinement ring 110 in the left reaction chamber of the dual reaction chamber plasma processing apparatus of fig. 2. The rotating ring is provided with a plurality of blocking areas, the blocking areas correspond to part of the gas passages of the limiting ring, and the corresponding positions of the blocking areas and the gas passages are adjusted along with the rotation of the rotating ring.
As shown in fig. 4, in the specific embodiment, the rotating ring 20 includes an inner edge 201, an outer edge 202, and a blocking region 203 and a gas permeable region 204 disposed between the inner edge 201 and the outer edge 202, the inner edge 201 and the outer edge 202 forming a hollow annular structure, the inner edge 201 corresponding to an inner circle below the confinement ring 110, the outer edge 202 corresponding to an outer circle below the confinement ring 110, and a blocking piece disposed between the inner edge and the outer edge, the blocking piece being the blocking region. It should be noted that the ratio of the blocking area to the entire rotating ring 20 can be 1/8,1/6,1/4, etc., and the specific ratio can be determined according to actual working requirements. In this embodiment, the blocking area accounts for 3/4 of the entire rotating ring 20. In addition, in this embodiment, the gas passage of the confinement ring may be a plurality of gas vents, and when the rotating ring is in a static state, the blocking area 203 of the rotating ring is located below the first area of the confinement ring, and the gas permeable area of the rotating ring is located below the second area of the confinement ring; when the rotating ring is in rotating motion, during one rotation of the rotating ring 20, as shown in fig. 5, when the blocking area 202 is located below the gas passage in the first area of the confinement ring 110, i.e. above the exhaust pump 140, the gas flow rate in the first area is reduced by the blocking area 202, while the gas flow rate in the second area is unchanged, which makes the gas flow distribution above the susceptor 130 uniform and even reverses the distribution; as shown in fig. 6, when the blocking area 203 is located below the second region of the confinement rings 110, the gas flow rate is further slowed down because the blocking area 203 is located below the second region where the gas flow rate is slower, and the gas flow distribution over the susceptor 130 is more uneven. Therefore, the uniformity of the gas exhaust can be adjusted by adjusting the residence time of the blocking region 203 in each of the different exhaust regions, and further, the residence time of the blocking region 203 of the rotating ring 20 under the gas passage in the first region of the confinement ring 110 is longer than the residence time under the gas passage in the second region of the confinement ring 110.
It should be noted that the rotating ring 20 may rotate at different angular velocities below the confinement rings 110 at non-uniform speeds, wherein the rotating ring 20 rotates at a lower speed in adjacent aeration areas than in non-adjacent aeration areas, such that the opening ratio of the gas passages corresponding to the confinement rings above the adjacent aeration areas is lower than the opening ratio of the gas passages corresponding to the confinement rings above the non-adjacent aeration areas.
Referring to fig. 7, in other embodiments, the rotating ring is further provided with a plurality of gas permeable regions 203 and blocking regions 204, wherein a blocking region 204 is formed between two adjacent gas permeable regions 203, specifically, the rotating ring comprises an inner edge 201 and an outer edge 202, a plurality of blocking blocks are arranged between the inner edge 201 and the outer edge 202 at intervals, the blocking blocks are blocking regions, the regions between the blocking blocks are gas permeable regions, the area of each blocking region 203 can be the same or different, the larger the area of the blocking region, the larger the gas passage covering surface area of the blocking ring, the more obvious the gas passage venting effect of the blocking ring is, and preferably, the surface area of the blocking region below the first region of the limiting ring is larger than the surface area of the blocking region below the second region of the limiting ring.
Furthermore, the blocking areas of the rotating ring can be arranged at intervals and have different areas, on one hand, when the rotating ring is in a static state below the limiting ring, the area of the blocking area below the first area of the limiting ring is larger than that of the blocking area below the second area of the limiting ring; on the other hand, when the rotating ring of the structure can rotate at a non-uniform speed below the limit ring, for the specific rotating speed and the residence time, reference may be made to the above embodiments, which are not described in detail again. The area of the blocking area is set to be different in size and matched with the rotation angular velocity, so that the opening rate of the gas channel of the limiting ring can be controlled more accurately, and the requirement on the uniformity of exhaust is met.
It should be noted that, in the actual process, there are many steps, and different gas parameters need to be set in each step, the gas flow field in the reaction chamber is often affected by the gas pressure, the gas flow rate and the gas viscosity coefficient, and the gas flow field can also be changed by the gas with different formulations, so that an appropriate angular velocity of the rotating ring needs to be selected according to the current gas flow field distribution to obtain the aperture opening ratios of the confinement ring in different states, thereby satisfying the uniform exhaust requirements of all process.
In summary, the dual-station processor for realizing uniform exhaust and the exhaust method thereof of the present invention change the air flow distribution in the exhaust area by partial blocking of the rotating ring by arranging the rotating ring below the limiting ring, and simultaneously realize the symmetry of the gas flow field by adopting asymmetric rotation speed.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be limited only by the attached claims.
Claims (8)
1. A dual site processor for uniform venting, said dual site processor comprising: two adjacently arranged plasma processing chambers, and a shared exhaust pump, each of said plasma processing chambers having a pedestal for supporting a substrate, each of said plasma processing chambers having a confinement ring disposed therein around the periphery of said pedestal, said confinement ring having an exhaust region disposed therebelow, said confinement ring having a plurality of gas passages for exhausting gas to said exhaust region, the exhaust regions of said two plasma processing chambers being at least partially adjacent to and in fluid communication with each other to form an adjacent vent region, said shared exhaust pump being disposed beneath said adjacent vent region and in fluid communication with the exhaust region of each of said plasma processing chambers, each of said confinement rings comprising a first region and a second region, said first region being a region corresponding to being disposed above said adjacent vent region, said second region being a region other than said first region, characterized in that said dual-station processor further comprises a spin ring, said spin ring being disposed beneath said confinement ring, said spin ring having a plurality of blocking regions corresponding to a portion of said gas passages of said confinement ring;
in the process of one rotation of the rotating ring, the residence time of the blocking area of the rotating ring below the gas channel in the first area of the limiting ring is longer than that of the blocking area of the rotating ring below the gas channel in the second area of the limiting ring.
2. The dual site processor for achieving uniform degassing of claim 1 wherein said rotating ring further defines a plurality of gas permeable areas, and a barrier area is defined between adjacent gas permeable areas.
3. The dual site processor for achieving uniform degassing of claim 1 wherein the surface area of the blocked region of the rotating ring below said confinement ring first region is greater than the surface area of the blocked region of the rotating ring below said confinement ring second region.
4. A dual site processor for achieving uniform venting as defined in claim 1 wherein said barrier region is located below said confinement ring first region.
5. A dual site processor for achieving uniform venting as defined in any of claims 1-4 wherein said rotating ring comprises: an inner edge and an outer edge, the barrier region being disposed between the inner edge and the outer edge.
6. A method of achieving uniform venting using a dual site processor as claimed in any one of claims 1 to 5, the method comprising:
adjusting the corresponding position of the blocking area of the rotating ring and the gas channel of the limiting ring when the rotating ring rotates according to the current process and the gas flow distribution in the plasma processing chamber;
adjusting the gas flow distribution of the exhaust area below the whole limiting ring by adjusting the corresponding position relation between the blocking area and the gas channel of the part of the limiting ring;
in the process of one rotation of the rotating ring, the residence time of the blocking area of the rotating ring below the gas passage in the first area of the limiting ring is longer than that of the blocking area of the rotating ring below the gas passage in the second area of the limiting ring.
7. The method of achieving uniform exhaust according to claim 6, wherein said adjusting the exhaust area gas flow distribution below the entire confinement ring includes making the exhaust area gas flow distribution uniform.
8. A plasma processing apparatus for achieving uniform exhaust, comprising the dual site processor of any of claims 1-5, the gas injection means in each plasma processing chamber in each dual site processor being connected to a reactive gas source.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911227802.5A CN112908821B (en) | 2019-12-04 | 2019-12-04 | Double-station processor for realizing uniform exhaust and exhaust method thereof |
| TW109140599A TWI812899B (en) | 2019-12-04 | 2020-11-19 | Dual-station processor for realizing uniform exhaust, exhaust method thereof, and plasma processing equipment |
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| CN201911227802.5A CN112908821B (en) | 2019-12-04 | 2019-12-04 | Double-station processor for realizing uniform exhaust and exhaust method thereof |
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| CN112908821A CN112908821A (en) | 2021-06-04 |
| CN112908821B true CN112908821B (en) | 2023-03-31 |
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| CN117187780A (en) * | 2022-05-30 | 2023-12-08 | 长鑫存储技术有限公司 | Semiconductor substrate processing apparatus and film thickness improvement method |
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| JPH088239A (en) * | 1995-06-21 | 1996-01-12 | Kokusai Electric Co Ltd | Wafer treatment device |
| JP3002448B1 (en) * | 1998-07-31 | 2000-01-24 | 国際電気株式会社 | Substrate processing equipment |
| JP2004342703A (en) * | 2003-05-13 | 2004-12-02 | Tokyo Electron Ltd | Device and method for plasma treatment |
| KR20090005697A (en) * | 2007-07-10 | 2009-01-14 | 주성엔지니어링(주) | Substrate processing apparatus comprising tunable baffle and exhaustion method using the same |
| CN105789014A (en) * | 2014-12-26 | 2016-07-20 | 中微半导体设备(上海)有限公司 | Plasma treatment device for achieving uniform exhaust |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4330315B2 (en) * | 2002-03-29 | 2009-09-16 | 東京エレクトロン株式会社 | Plasma processing equipment |
| KR100963297B1 (en) * | 2007-09-04 | 2010-06-11 | 주식회사 유진테크 | showerhead and substrate processing unit including the showerhead, plasma supplying method using the showerhead |
| CN101488446B (en) * | 2008-01-14 | 2010-09-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma processing apparatus and gas dispensing apparatus thereof |
| JP5798143B2 (en) * | 2013-03-12 | 2015-10-21 | 株式会社東芝 | Parallel plate type dry etching apparatus and semiconductor device manufacturing method using the same |
| WO2015023435A1 (en) * | 2013-08-12 | 2015-02-19 | Applied Materials, Inc. | Recursive pumping for symmetrical gas exhaust to control critical dimension uniformity in plasma reactors |
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2019
- 2019-12-04 CN CN201911227802.5A patent/CN112908821B/en active Active
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- 2020-11-19 TW TW109140599A patent/TWI812899B/en active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH088239A (en) * | 1995-06-21 | 1996-01-12 | Kokusai Electric Co Ltd | Wafer treatment device |
| JP3002448B1 (en) * | 1998-07-31 | 2000-01-24 | 国際電気株式会社 | Substrate processing equipment |
| JP2004342703A (en) * | 2003-05-13 | 2004-12-02 | Tokyo Electron Ltd | Device and method for plasma treatment |
| KR20090005697A (en) * | 2007-07-10 | 2009-01-14 | 주성엔지니어링(주) | Substrate processing apparatus comprising tunable baffle and exhaustion method using the same |
| CN105789014A (en) * | 2014-12-26 | 2016-07-20 | 中微半导体设备(上海)有限公司 | Plasma treatment device for achieving uniform exhaust |
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| CN112908821A (en) | 2021-06-04 |
| TWI812899B (en) | 2023-08-21 |
| TW202123364A (en) | 2021-06-16 |
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