TWM514103U - Processing solution supply piping loop - Google Patents

Processing solution supply piping loop Download PDF

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Publication number
TWM514103U
TWM514103U TW104200566U TW104200566U TWM514103U TW M514103 U TWM514103 U TW M514103U TW 104200566 U TW104200566 U TW 104200566U TW 104200566 U TW104200566 U TW 104200566U TW M514103 U TWM514103 U TW M514103U
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Taiwan
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liquid
liquid supply
storage tank
processing
intermediate storage
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TW104200566U
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Chinese (zh)
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Toshinobu Furusho
Takashi Sasa
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Tokyo Electron Ltd
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Description

處理液供給配管迴路Treatment liquid supply piping circuit

該新型,係關於在例如半導體晶圓或FPD(平面顯示器)基板等的製造程序中,供給顯像液等之處理液的處理液供給配管迴路者。The present invention relates to a processing liquid supply piping circuit that supplies a processing liquid such as a developing liquid to a manufacturing process such as a semiconductor wafer or an FPD (planar display) substrate.

一般而言,在半導體元件之製造中,係為了例如對半導體晶圓或FPD基板等上(以下稱為晶圓等)塗佈光阻液,且對遮罩圖案進行曝光處理,使其形成電路圖案,從而使用光微影技術。在該光微影技術中,係藉由旋轉塗佈法,對晶圓等塗佈光阻劑,而因應預定之電路圖案,對藉由此所形成的光阻膜進行曝光,且對該曝光圖案進行顯像處理,藉此,在光阻膜形成電路圖案。Generally, in the manufacture of a semiconductor element, for example, a photoresist liquid is applied onto a semiconductor wafer, an FPD substrate or the like (hereinafter referred to as a wafer or the like), and the mask pattern is subjected to exposure processing to form a circuit. Patterns to use light lithography. In the photolithography method, a photoresist is applied to a wafer or the like by a spin coating method, and a photoresist film formed by the film is exposed in accordance with a predetermined circuit pattern, and the exposure is performed. The pattern is subjected to development processing, whereby a circuit pattern is formed on the photoresist film.

在像這樣的光微影工程中,一般是使用塗佈/顯像處理系統,該塗佈顯像處理系統,係將曝光裝置連接於進行光阻劑之塗佈/顯像的塗佈/顯像裝置。在該塗佈/顯像處理系統中,係有將顯像液或稀釋劑等的處理液供給至被配設於該系統之各處理單元,例如光阻塗佈處理單元、顯像處理單元等的必要。In a photolithography project like this, a coating/development processing system is generally used, which is to connect an exposure device to a coating/display for coating/developing a photoresist. Like a device. In the coating/development processing system, a processing liquid such as a developing solution or a diluent is supplied to each processing unit disposed in the system, for example, a photoresist coating processing unit, a development processing unit, or the like. Necessary.

作為以往之該型式的處理液供給配管迴路,為了將進行製程處理的處理液供給至處理單元,而暫時儲存從處理液供給源所供給之處理液,與此同時,使溶解於處理液內的氣體發泡而排出,藉由此來進行脫氣(例如,參閱專利文獻1)。又,在該型式的處理液供給配管迴路中,為了獲得供給壓力,而以伸縮泵(bellows pump)或隔膜型泵來進行加壓,壓送至供給噴嘴。In the processing liquid supply piping circuit of the above-described type, in order to supply the processing liquid for performing the processing to the processing unit, the processing liquid supplied from the processing liquid supply source is temporarily stored, and at the same time, dissolved in the processing liquid. The gas is foamed and discharged, whereby degassing is performed (for example, refer to Patent Document 1). Further, in the treatment liquid supply piping circuit of this type, in order to obtain the supply pressure, the pump is pressurized by a bellows pump or a diaphragm pump, and is pressure-fed to the supply nozzle.

[先前技術文獻][Previous Technical Literature] [專利文獻][Patent Literature]

[專利文獻1]日本特開2000-114154號公報(申請專利範圍、圖6)[Patent Document 1] Japanese Laid-Open Patent Publication No. 2000-114154 (Patent Patent Application, FIG. 6)

[新型概要][New summary]

在以往的處理液供給配管迴路中,係儲存機構之儲存容器內的處理液或配管中之處理液的脫氣不充分,因而在過濾器內發泡,或者在將處理液吐出至基板上時發泡,則擔憂因此導致吐出量之精度不良或過濾器之功能下降。例如,若處理液之發泡是在過濾器進行過濾之前,則擔憂被過濾器濾材捕捉而引起堵塞,若是在通過濾材之後,則擔憂流動至供給噴嘴為止而成為塗佈不良的原 因。In the conventional treatment liquid supply piping circuit, the treatment liquid in the storage container of the storage mechanism or the treatment liquid in the piping is insufficiently deaerated, so that it is foamed in the filter or when the treatment liquid is discharged onto the substrate. Foaming is a concern that the accuracy of the discharge amount is poor or the function of the filter is lowered. For example, if the foaming of the treatment liquid is carried out before the filtration of the filter, the filter medium may be caught by the filter and cause clogging. If the filter medium is passed through, the flow may be caused to flow to the supply nozzle, and the coating may be poor. because.

又,在以往的處理液供給配管迴路中,暫時被儲存於儲存機構而從儲存機構所吐出的處理液,雖係在被供給至處理單元的期間,藉由過濾器去除處理液中的異物,但由於過濾器是1次之通過,因此,亦有導致經時變化後之處理液中之改性的異物通過之虞。在吐出像這樣的異物時,擔憂會對圖案之微細化的處理帶來不良影響。Further, in the conventional processing liquid supply piping circuit, the processing liquid temporarily stored in the storage means and discharged from the storage means is removed from the processing liquid by the filter while being supplied to the processing unit. However, since the filter passes once, there is also a possibility that the foreign matter modified in the treatment liquid after the time change is passed. When a foreign matter such as this is discharged, there is a concern that the processing of the pattern is adversely affected.

該新型,係有鑑於上述情事進行研究者,以提供一種可連續地進行下述方式的處理液供給配管迴路為目的,其方式,係使用儲存機構,增加滯留於處理液供給配管迴路內之處理液中之溶解氣體之脫氣處理的機會,並且增加過濾器的過濾次數,藉由此,使捕捉液中異物被濾材捕捉,而使潔淨度提升。In view of the above, the present invention has been made in an effort to provide a processing liquid supply piping circuit in which a storage mechanism is used to increase the retention in the processing liquid supply piping circuit. The opportunity of the degassing treatment of the dissolved gas in the liquid increases the number of times of filtration of the filter, whereby the foreign matter in the trapping liquid is captured by the filter medium, and the cleanliness is improved.

為了解決前述問題,該新型之處理液供給配管迴路,係在設置於用以從液供給噴嘴將處理液供給至基板之表面而施予處理的液處理裝置,且構成於前述液供給噴嘴與前述處理液的液供給部之間的處理液供給配管迴路中,其特徵係,具備有:中間儲槽,暫時儲存從液供給部通過供給配管所供給的處理液;排氣配管,連接於前述中間儲槽之上方,用於對內部之處理液進行減壓而使其脫氣;送液泵,從前述中間儲槽之出口側,吸取前述處理液,使吐出動作連續;開關閥,被設置於形成為前述送液 泵之吐出側的前述送液泵二次側配管與前述液供給噴嘴之間的配管,進行處理液朝向前述液供給噴嘴側流動之開關;循環配管,從前述開關閥之一次側配管分歧,連通於前述中間儲槽,使前述處理液循環;及循環閥,對前述循環配管之前述處理液的流動進行開關(申請專利範圍第1項)。該情況下,前述送液泵,係磁鐵泵為較佳(申請專利範圍第2項)。In order to solve the above-described problems, the liquid processing supply circuit of the present invention is provided in a liquid processing apparatus which is provided in a surface for supplying a processing liquid from a liquid supply nozzle to a surface of a substrate, and is configured in the liquid supply nozzle and the aforementioned The treatment liquid supply piping circuit between the liquid supply units of the treatment liquid is characterized in that: an intermediate storage tank is provided, and the treatment liquid supplied from the liquid supply unit through the supply pipe is temporarily stored; and the exhaust pipe is connected to the middle Above the storage tank, the internal treatment liquid is decompressed to degas; the liquid supply pump draws the treatment liquid from the outlet side of the intermediate storage tank to make the discharge operation continuous; the on-off valve is disposed at Formed as the aforementioned liquid feeding a pipe between the secondary pipe of the liquid supply pump and the liquid supply nozzle on the discharge side of the pump, a switch that flows the processing liquid toward the liquid supply nozzle side, and a circulation pipe that branches from the primary side of the switching valve to communicate The processing liquid is circulated in the intermediate storage tank; and a circulation valve is used to switch the flow of the treatment liquid in the circulation piping (No. 1 of the patent application). In this case, the liquid feeding pump is preferably a magnet pump (the second item of the patent application).

藉由像這樣的構成,從液供給部所供給的處理液,雖係以預定量被儲存於中間儲槽且脫氣,但可藉由利用循環配管,使處理液從送液泵返回中間儲槽的方式,增加在中間儲槽脫氣的機會。又,送液泵,係可藉由設成為磁鐵泵的方式,不使其產生塵屑而連續使用。With such a configuration, the treatment liquid supplied from the liquid supply unit is stored in the intermediate storage tank and degassed by a predetermined amount, but the treatment liquid can be returned from the liquid supply pump to the intermediate storage by using the circulation piping. The way of the tank increases the chance of degassing in the intermediate tank. Further, the liquid supply pump can be continuously used without being dusty by providing a magnet pump.

又,在申請專利範圍第1項或申請專利範圍第2項之新型中,其特徵係,在前述中間儲槽與前述送液泵之間的配置設置有過濾器(申請專利範圍第3項)。或者,亦可在前述送液泵二次側配管設置過濾器(申請專利範圍第4項)。Further, in the novelty of the first application of the patent application or the second aspect of the patent application, the filter is provided in the arrangement between the intermediate storage tank and the liquid supply pump (Patent No. 3 of the patent application) . Alternatively, a filter may be provided in the piping on the secondary side of the liquid supply pump (the fourth item of the patent application).

藉由像這樣的構成,即使使送液泵常時驅動,處理液亦通過過濾器而進行循環,故亦可增加濾材的通過次數。According to this configuration, even if the liquid feeding pump is constantly driven, the processing liquid is circulated through the filter, so that the number of passages of the filter medium can be increased.

又,在申請專利範圍第1項~申請專利範圍第4項的新型中,其特徵係,具有:控制部,在分歧成前述循環配管的前方,設置有檢測前述處理液之流量的流量計或檢測壓力的壓力計,以使檢測值維持預定之設定的方 式,控制前述送液泵的驅動部(申請專利範圍第5項)。Further, in the novelty of the first to the fourth aspect of the patent application, the fourth aspect of the invention is characterized in that the control unit includes a flow meter for detecting a flow rate of the treatment liquid in front of the circulation pipe. A pressure gauge that detects pressure to maintain the measured value at a predetermined setting The control unit of the liquid feeding pump is controlled (the fifth item of the patent application).

藉由像這樣的構成,以控制送液泵之旋轉數的方式,可自由地調整循環之處理液的液量或送液壓力。With such a configuration, the liquid amount or the liquid supply pressure of the circulating treatment liquid can be freely adjusted so as to control the number of rotations of the liquid supply pump.

又,其特徵係,在前述循環閥與中間儲槽之間,係設置有旁通閥,該旁通閥,係切換處理液流至中間儲槽的流路與不經由前述中間儲槽而連接於前述中間儲槽之出口側之配管的旁通流路(申請專利範圍第6項)。Further, a bypass valve is provided between the circulation valve and the intermediate storage tank, and the bypass valve is configured to switch a flow path of the treatment liquid to the intermediate storage tank without being connected via the intermediate storage tank. A bypass flow path of the piping on the outlet side of the intermediate storage tank (No. 6 of the patent application).

藉由像這樣的構成,由於循環的光阻液不會進入中間儲槽,因此,在對中間儲槽供給新的光阻液時,可防止上限液面感測器的誤檢測,該上限液面感測器,係決定供給停止的時序。With such a configuration, since the circulating photoresist liquid does not enter the intermediate storage tank, erroneous detection of the upper limit liquid level sensor can be prevented when a new photoresist liquid is supplied to the intermediate storage tank, the upper limit liquid The surface sensor determines the timing of the supply stop.

根據本新型,可有效率地去除有包含於處理液中之可能性的溶解氣體,並且可自由地控制吐出量。又,可共用不同處理單元之同種處理液的供給源。According to the present invention, the dissolved gas having the possibility of being contained in the treatment liquid can be efficiently removed, and the discharge amount can be freely controlled. Further, a supply source of the same processing liquid of different processing units can be shared.

A、B‧‧‧塗佈單元A, B‧‧‧ coating unit

71‧‧‧液供給瓶71‧‧‧Liquid supply bottle

74‧‧‧中間儲槽74‧‧‧Intermediate storage tank

76‧‧‧中間儲槽排氣閥76‧‧‧Intermediate tank exhaust valve

98‧‧‧過濾器98‧‧‧Filter

111‧‧‧上限液面感測器111‧‧‧Upper level liquid level sensor

112‧‧‧下限液面感測器112‧‧‧Limited liquid level sensor

114‧‧‧磁鐵泵114‧‧‧ Magnet pump

116‧‧‧循環配管116‧‧‧Recycling piping

117‧‧‧循環閥117‧‧‧Circulation valve

118‧‧‧分配原始閥118‧‧‧Distribution of the original valve

119‧‧‧流量計119‧‧‧ flowmeter

125‧‧‧旁通閥125‧‧‧ Bypass valve

126‧‧‧旁通配管126‧‧‧Bypass piping

130a、b‧‧‧分配閥130a, b‧‧‧Distribution valve

132a、b‧‧‧液供給噴嘴132a, b‧‧‧ liquid supply nozzle

[圖1]表示本新型之實施形態之塗佈單元之處理液供給配管圖的迴路圖。Fig. 1 is a circuit diagram showing a treatment liquid supply pipe diagram of a coating unit according to an embodiment of the present invention.

[圖2]表示本新型之實施形態之循環配管路之實施形態的迴路圖。Fig. 2 is a circuit diagram showing an embodiment of a circulation piping of the embodiment of the present invention.

[圖3]表示本新型之一部分之循環迴路之實施例的迴 路圖。[Fig. 3] shows an embodiment of a loop circuit of a part of the present invention Road map.

[圖4]說明本新型之實施所使用之磁鐵泵之構造的構成圖。Fig. 4 is a configuration diagram for explaining a structure of a magnet pump used in the practice of the present invention.

[圖5]本新型之實施之液處理裝置的平面圖。Fig. 5 is a plan view of a liquid processing apparatus embodying the present invention.

[圖6]本新型之實施之液處理裝置的正視圖。Fig. 6 is a front elevational view of the liquid processing apparatus of the present invention.

[圖7]本新型之實施之液處理裝置的後視圖。Fig. 7 is a rear elevational view of the liquid processing apparatus of the present invention.

[用以實施本新型之形態][To implement the form of the present invention]

以下,根據添加圖面,詳細說明該新型之實施形態。圖1,係表示該新型之處理液供給配管迴路之一例的概略圖;圖2與圖3,係表示該新型之處理液供給配管迴路之另一例的概略圖;圖4,係針對用以使用於本新型之使處理液循環的磁鐵泵,說明構造的構成圖。Hereinafter, the novel embodiment will be described in detail based on the additional drawings. Fig. 1 is a schematic view showing an example of the new processing liquid supply piping circuit; Fig. 2 and Fig. 3 are schematic views showing another example of the novel processing liquid supply piping circuit; and Fig. 4 is for use. The configuration of the structure of the magnet pump for circulating the processing liquid of the present invention will be described.

上述處理液供給配管迴路,係如圖1所示,從處理液供給源(液供給部)例如裝有光阻液的液供給瓶71來供給處理液。在路徑的中途,加以配設暫時儲存來自該液供給瓶71之光阻液的中間儲槽74。在連接該液供給瓶71與中間儲槽74之配管72的中途,係設置有中間儲槽供給閥73,該中間儲槽供給閥73,係進行光阻液之流入之開關。另外,後面將對中間儲槽74之細節及功能進行說明。As shown in FIG. 1, the processing liquid supply piping circuit supplies a processing liquid from a processing liquid supply source (liquid supply unit), for example, a liquid supply bottle 71 containing a photoresist. In the middle of the path, an intermediate storage tank 74 for temporarily storing the photoresist liquid from the liquid supply bottle 71 is disposed. In the middle of the pipe 72 connecting the liquid supply bottle 71 and the intermediate storage tank 74, an intermediate storage tank supply valve 73 is provided, and the intermediate storage tank supply valve 73 is a switch for allowing the flow of the photoresist liquid. In addition, the details and functions of the intermediate storage tank 74 will be described later.

中間儲槽74之底部側,係以過濾器一次配管77與過濾器98之一次側(上游側)連接,過濾器98之 二次側(下游側),係經由過濾器二次配管113,連接於形成為磁鐵泵114之吸液側的一次側吸入口204。光阻液中的異物被該過濾器98過濾,為了去除在該過濾器98內發泡而累積的氣體,而設置有過濾器排氣配管78,定期地開啟過濾器排氣閥79,進行排氣。The bottom side of the intermediate storage tank 74 is connected to the primary side (upstream side) of the filter 98 by a filter primary pipe 77, and the filter 98 The secondary side (downstream side) is connected to the primary side suction port 204 formed as the liquid suction side of the magnet pump 114 via the filter secondary pipe 113. The foreign matter in the photoresist is filtered by the filter 98, and a filter exhaust pipe 78 is provided to remove the gas accumulated in the filter 98, and the filter exhaust valve 79 is periodically opened to perform the discharge. gas.

作為先前連接於吐出口205(該吐出口205,係形成為磁鐵泵114的吐出側)的路徑,泵二次側配管99,係與計測流量的流量計119連接,該流量計119的前方,係設置有分配原始閥118,對相較於此更往先前之光阻液的流動進行開關。As a path previously connected to the discharge port 205 (the discharge port 205 is formed on the discharge side of the magnet pump 114), the pump secondary side pipe 99 is connected to the flow meter 119 for measuring the flow rate, and the flow meter 119 is arranged in front of the flow meter 119. A distribution original valve 118 is provided to switch the flow of the earlier photoresist solution.

在上述泵二次側配管99與分配原始閥118之間,係存在有用於分歧成另一方的分歧管部115,在另一方,係設置有循環配管116,該循環配管116,係用於作為使光阻液返回至中間儲槽74的流路而進行循環。在該循環配管116的中途路徑,係設置有對循環之流動進行開關的循環閥117。Between the pump secondary side pipe 99 and the distribution original valve 118, there is a branch pipe portion 115 for branching into the other, and the other is provided with a circulation pipe 116 for use as a The photoresist is returned to the flow path of the intermediate storage tank 74 to be circulated. A circulation valve 117 that switches the flow of the circulation is provided in the middle path of the circulation pipe 116.

接下來,說明關於從流量計119之前的路徑。首先,圖1中之X-Y所示的一點鏈線,雖係參閱圖7而在後文中說明細節,但以例如光阻劑塗佈單元10、11為例,表示光阻劑塗佈單元不同之情況。該不同的光阻劑塗佈單元10、111記載為塗佈單元A、B。該塗佈單元A、B的各個液供給噴嘴132a、132b,係供給有光阻液的供給源側被共用化,在流量計119之二次側具有分歧點,而進行連接。Next, the path before the flow meter 119 will be described. First, although the dot chain shown by XY in FIG. 1 is described later with reference to FIG. 7, for example, the photoresist coating units 10 and 11 are used as an example, and the photoresist coating unit is different. Happening. The different photoresist coating units 10 and 111 are described as coating units A and B. The respective liquid supply nozzles 132a and 132b of the coating units A and B are shared by the supply source side to which the photoresist liquid is supplied, and are connected to each other on the secondary side of the flow meter 119.

而且,在液供給噴嘴132a、132b與流量計119之間的噴嘴供給管131a、131b的中途路徑,係分別設置有分配閥130a、130b,藉由控制部300予以控制開關之時序。Further, distribution paths 130a and 130b are provided in the intermediate paths of the nozzle supply tubes 131a and 131b between the liquid supply nozzles 132a and 132b and the flow meter 119, and the timing of the switches is controlled by the control unit 300.

如圖1所示的中間儲槽74,係在上限量位置與下限量位置設置用於辨別光阻液之儲存等級之例如靜電容量式的液面感測器。上限位置,係指當以上限液面感測器111來檢測從液供給瓶71所供給的光阻液時,中間儲槽供給閥73被關閉而停止供給的位置。下限位置,係指當中間儲槽74內之液面被使用而下降,使得下限液面感測器112成為關閉時,中間儲槽供給閥73被開啟而供給光阻液的位置。The intermediate storage tank 74 shown in Fig. 1 is provided with, for example, a capacitance type liquid level sensor for discriminating the storage level of the photoresist liquid at the upper limit amount position and the lower limit amount position. The upper limit position is a position at which the intermediate storage tank supply valve 73 is closed and the supply is stopped when the upper limit liquid level sensor 111 detects the photoresist liquid supplied from the liquid supply bottle 71. The lower limit position refers to a position at which the intermediate reservoir supply valve 73 is opened and the photoresist liquid is supplied when the liquid level in the intermediate storage tank 74 is lowered to cause the lower limit liquid level sensor 112 to be closed.

設定為在該中間儲槽74內之光阻液面的上方產生空間,以對該空間之氣體進行排氣的方式,設置中間儲槽排氣管75與中間儲槽排氣閥76,以便作為負壓而對包含於光阻液中被溶解的氣體例如氮、氧氣等進行脫氣。中間儲槽排氣管75,係被連接於未圖示的吸引排氣源。A space is formed above the photoresist liquid level in the intermediate storage tank 74, and an intermediate storage tank exhaust pipe 75 and an intermediate storage tank exhaust valve 76 are provided in such a manner as to exhaust the gas in the space, so as to serve as The gas contained in the photoresist liquid, such as nitrogen, oxygen, or the like, is degassed by a negative pressure. The intermediate storage tank exhaust pipe 75 is connected to a suction exhaust source (not shown).

前述的循環配管116,係以在不會對中間儲槽74之上限液面感測器111與下限液面感測器112之檢測位置帶來影響的位置,而光阻液沿著中間儲槽74之內部壁面上流下的方式予以配置。藉此,由於循環的光阻液,係在中間儲槽74內重複脫氣,因此,光阻液中的溶解氣體不會在配管中或所吐出之基板上發泡。又,在該循環配管116的中途,係設置有進行循環配管116之開關的循環閥 117。The above-mentioned circulation pipe 116 is at a position that does not affect the detection position of the upper limit liquid level sensor 111 and the lower limit liquid level sensor 112 of the intermediate storage tank 74, and the photoresist liquid is along the intermediate storage tank. The inner wall of the 74 is configured to flow down. Thereby, since the circulating photoresist liquid is repeatedly degassed in the intermediate storage tank 74, the dissolved gas in the photoresist liquid is not foamed in the piping or the discharged substrate. Further, in the middle of the circulation pipe 116, a circulation valve for performing a switch of the circulation pipe 116 is provided. 117.

接下來,說明關於磁鐵泵114的構造例。圖4,係表示該新型之一實施例之磁鐵泵114之主要部分的剖面圖。在由前殼體201與後殼體202所形成的泵室203,係其前面形成有光阻液之吸入口204,在其上面形成有光阻液之吐出口205。在泵室203的內部,係收容有旋轉體206。旋轉體206,係可旋轉地支撐於支撐軸207,該支撐軸207,係從後殼體202的中央朝向泵室203突設。旋轉體206,係藉由下述者所構成,其包括:圓筒狀之軸承211,可與支撐軸207之外周滑動地進行接觸;磁石環213,形成於該軸承211之外周,在外周部配置圓環狀的從動磁鐵212;葉輪214,被裝設於該磁石環213的前面,藉由旋轉將光阻液從吸入口204導入至泵室203的內部,使其從吐出口205吐出;止推軸承215,被裝設於該葉輪214的背面,在空轉時等,與支撐軸207之前端部進行針尖接觸;及封口環(mouse ring)216,被裝設於葉輪214的前面。又,在葉輪214前面之與封口環216相對向之前殼體201的部分,係裝設有襯環217,該襯環217,係當葉輪214往前面移動時進行滑接。Next, a configuration example of the magnet pump 114 will be described. Fig. 4 is a cross-sectional view showing the main part of a magnet pump 114 of an embodiment of the present invention. In the pump chamber 203 formed by the front case 201 and the rear case 202, a suction port 204 of a photoresist liquid is formed on the front surface thereof, and a discharge port 205 of a photoresist liquid is formed thereon. Inside the pump chamber 203, a rotating body 206 is housed. The rotating body 206 is rotatably supported by a support shaft 207 that protrudes from the center of the rear housing 202 toward the pump chamber 203. The rotating body 206 is composed of a cylindrical bearing 211 that is slidably contacted with the outer circumference of the support shaft 207, and a magnet ring 213 formed on the outer circumference of the bearing 211 at the outer peripheral portion. An annular driven magnet 212 is disposed; the impeller 214 is attached to the front surface of the magnet ring 213, and the photoresist is introduced into the pump chamber 203 from the suction port 204 by rotation to be discharged from the discharge port 205. The thrust bearing 215 is attached to the back surface of the impeller 214, and is in contact with the tip end of the support shaft 207 during idling, and a mouse ring 216 is attached to the front surface of the impeller 214. Further, a portion of the front surface of the impeller 214 opposite to the sealing ring 216 facing the front casing 201 is provided with a lining ring 217 which is slidably engaged when the impeller 214 moves forward.

另一方面,在經由後殼體202而與磁石環213之從動磁鐵212相對向的位置,係與從動磁鐵212磁耦合地配置有構成旋轉驅動手段之驅動旋轉體221的圓環狀驅動磁鐵222。驅動旋轉體221,係經由驅動軸223,藉由伺服馬達M來予以驅動。另外,驅動旋轉體221,係與泵 室203隔離,被收容於後殼體202與驅動體殼體部224之間的空間。軸承211,係由非黏著材料例如PTFE所形成。On the other hand, at a position facing the driven magnet 212 of the magnet ring 213 via the rear casing 202, an annular drive that drives the rotating body 221 constituting the rotational driving means is magnetically coupled to the driven magnet 212. Magnet 222. The driving rotary body 221 is driven by the servo motor M via the drive shaft 223. In addition, the driving rotating body 221, the system and the pump The chamber 203 is isolated and housed in a space between the rear housing 202 and the driver housing portion 224. The bearing 211 is formed of a non-adhesive material such as PTFE.

根據該磁鐵泵114,當伺服馬達M藉由旋轉軸223來對驅動旋轉體221加以旋轉驅動,而使得驅動磁鐵222旋轉時,與此磁耦合之從動磁鐵212亦進行旋轉。藉此,軸承211,係繞支撐軸207的周圍滑動,葉輪214旋轉,從吸入口204將光阻液導入至泵室203的內部。所導入的光阻液,係大部分經由吐出口205被輸送至泵二次配管99側。According to the magnet pump 114, when the servo motor M rotationally drives the drive rotor 221 by the rotary shaft 223 to rotate the drive magnet 222, the driven magnet 212 magnetically coupled thereto also rotates. Thereby, the bearing 211 slides around the support shaft 207, the impeller 214 rotates, and the photoresist liquid is introduced into the pump chamber 203 from the suction port 204. Most of the introduced photoresist is transported to the pump secondary pipe 99 side via the discharge port 205.

以像這樣的構成,中間儲槽74內的光阻液,係通過過濾器98,在磁鐵泵114被施加供給壓力,在配管之分歧管部115流至循環配管116側,再次進行朝向中間儲槽74的光阻液循環。With such a configuration, the photoresist liquid in the intermediate storage tank 74 passes through the filter 98, and the supply pressure is applied to the magnet pump 114, and flows to the circulation pipe 116 side in the branch pipe portion 115 of the pipe, and is again directed toward the intermediate storage. The photoresist of the tank 74 circulates.

接下來,說明關於光阻液分配,在將光阻液朝向液供給噴嘴132a、132b輸送,而將光阻液供給至基板上時,開啟分配原始閥118(該分配原始閥118,係設置於流量計119的一次側與循環配管116的分歧管部115之間),將光阻液輸送至流量計119以後,被滴下處理之塗佈單元A、B所對應的任一分配閥130a、130b會被開啟,藉由此進行液處理。另外,在此時,循環閥117被關閉,以光阻液不流至循環配管116側的方式予以控制。Next, with regard to the distribution of the photoresist liquid, when the photoresist liquid is supplied toward the liquid supply nozzles 132a, 132b and the photoresist liquid is supplied onto the substrate, the dispensing original valve 118 is opened (the original valve 118 is disposed, Between the primary side of the flow meter 119 and the branch pipe portion 115 of the circulation pipe 116, after the photoresist liquid is sent to the flow meter 119, any of the distribution valves 130a, 130b corresponding to the coating units A and B that are dripped are processed. It will be turned on for liquid processing. Further, at this time, the circulation valve 117 is closed, and the photoresist liquid is not controlled to flow to the side of the circulation pipe 116.

流量計119,係監視流至噴嘴供給管131a、131b側的流量,藉由開關分配閥130a或(及)分配閥 130b之時序而變動的液量,係以與作為光阻膜之分配速率的每個時間之吐出流量匹配的方式,來控制磁鐵泵114之伺服馬達M的旋轉數。藉此,可抑制像例如吐出動作重複或單獨等般之因光阻劑的吐出時序所引起之液量的變動。亦可取代液流量,而設置壓力感測器來監視液壓力,或亦可監視液流量與液壓力兩方,而用於控制。The flow meter 119 monitors the flow to the nozzle supply pipes 131a, 131b side by the switch distribution valve 130a or (and) the distribution valve. The amount of liquid that fluctuates at the timing of 130b controls the number of rotations of the servo motor M of the magnet pump 114 so as to match the discharge flow rate at each time as the distribution rate of the photoresist film. Thereby, it is possible to suppress fluctuations in the amount of liquid caused by the discharge timing of the photoresist as in the case where the discharge operation is repeated or separately. Instead of liquid flow, a pressure sensor can be provided to monitor the hydraulic pressure, or both the liquid flow and the hydraulic pressure can be monitored for control.

另外,如圖2所示,流量計119,係設置於比分歧管部115更往前方,即使設置於可常時監視循環動作中之液流量的位置,亦可如前述同樣地控制磁鐵泵114。又,磁鐵泵114之配置,係亦可設置於過濾器98之一次側。Further, as shown in FIG. 2, the flow meter 119 is disposed further forward than the branch pipe portion 115, and the magnet pump 114 can be controlled in the same manner as described above even if it is provided at a position where the liquid flow rate during the cycle operation can be constantly monitored. . Further, the arrangement of the magnet pump 114 may be provided on the primary side of the filter 98.

即使在循環配管116中,亦如圖3所示,在循環閥117的二次側設置有形成為3通閥的旁通閥125,該循環閥117,係設置於中間儲槽74與循環配管116之間。該旁通閥125,係在與過濾器一次側配管77(圖1)之間設置旁通分歧部127,而以旁通配管126予以連接,該過濾器一次側配管77,係有別於連接至中間儲槽74之配管而形成為中間儲槽74之外側的配管。旁通閥125,係能夠以不通過中間儲槽74而使其循環的方式,來進行切換。切換信號,係例如中間儲槽74的下限液面感測器112被檢測,而與光阻液從液供給瓶71開始供給至中間儲槽74的信號同步,切換旁通閥125,連接於旁通配管126側。接下來,在上限液面感測器111檢測後,停止光阻液之供給,與此同時,進行將旁通閥125返回原始的切 換,而連接於中間儲槽74側。又,作為其他例,在塗佈單元A、B不進行液處理之待機狀態經過了預定時間的情況下,或複數個液供給噴嘴132a、132b中未使用之液供給噴嘴132a、132b待機之時間經過了預定時間的情況下等,從控制部輸出切換成旁通配管126側的信號。又,進行同步而降低磁鐵泵114之伺服馬達M的旋轉數,從而使光阻液的循環總量減少。藉此,不會使過濾器98之過濾量造成大多浪費,而可抑制光阻劑成分的變質。Even in the circulation pipe 116, as shown in FIG. 3, a bypass valve 125 formed as a three-way valve is provided on the secondary side of the circulation valve 117, and the circulation valve 117 is provided in the intermediate storage tank 74 and the circulation piping 116. between. The bypass valve 125 is provided with a bypass branching portion 127 between the filter primary side pipe 77 (FIG. 1), and is connected by a bypass pipe 126. The filter primary side pipe 77 is different from the connection. The piping to the intermediate storage tank 74 is formed as a piping on the outer side of the intermediate storage tank 74. The bypass valve 125 can be switched so as not to circulate through the intermediate storage tank 74. The switching signal, for example, the lower limit liquid level sensor 112 of the intermediate storage tank 74 is detected, and is synchronized with the signal that the photoresist liquid is supplied from the liquid supply bottle 71 to the intermediate storage tank 74, and the bypass valve 125 is switched to be connected to the side. The side of the distribution pipe 126. Next, after the upper limit liquid level sensor 111 detects, the supply of the photoresist liquid is stopped, and at the same time, the bypass valve 125 is returned to the original cut. Change and connect to the side of the intermediate storage tank 74. Further, as another example, when the coating units A and B have not been subjected to the liquid processing in the standby state for a predetermined period of time, or the liquid supply nozzles 132a and 132b that are not used in the plurality of liquid supply nozzles 132a and 132b are in standby time When the predetermined time has elapsed, the control unit outputs a signal that is switched to the side of the bypass pipe 126. Further, synchronization is performed to reduce the number of rotations of the servo motor M of the magnet pump 114, thereby reducing the total amount of circulation of the photoresist. Thereby, the amount of filtration of the filter 98 is not largely wasted, and deterioration of the photoresist component can be suppressed.

接下來,簡單說明關於將該新型之處理液供給系統應用於光阻劑塗佈/顯像處理系統的一例。圖5,係表示光阻劑塗佈/顯像處理系統的概略平面圖;圖6,係光阻劑塗佈/顯像處理系統的概略正面圖;圖7,係光阻劑塗佈/顯像處理系統的概略後視圖。Next, an example of applying the novel processing liquid supply system to a photoresist coating/development processing system will be briefly described. Figure 5 is a schematic plan view showing a photoresist coating/development processing system; Figure 6 is a schematic front view of a photoresist coating/development processing system; and Figure 7 is a photoresist coating/development A schematic rear view of the processing system.

上述光阻劑塗佈/顯像處理系統1,係如圖5所示,具有一體連接下列者之構成:卡匣站2,對收容例如25片晶圓W的卡匣C,搬入搬出晶圓W;處理站3,鄰接於該卡匣站2而設置,且多段配置有用以在塗佈顯像工程中以單片式施予預定處理的各種處理單元;及介面部4,在與鄰接於該處理站3而設置的曝光裝置(未圖示)之間進行晶圓W之收授。The photoresist coating/development processing system 1 has a configuration in which the following is integrally connected as shown in FIG. 5: the cassette station 2 carries and transports the wafer to the cassette C for accommodating, for example, 25 wafers W. W; processing station 3, disposed adjacent to the cassette station 2, and configured in a plurality of stages to apply various processing units that are subjected to predetermined processing in a single-piece coating process; and the interface portion 4 is adjacent to The wafer W is received between the exposure devices (not shown) provided in the processing station 3.

卡匣站2,係可沿著水平X方向呈一列載置複數個卡匣C於卡匣載置台5上的預定位置。又,在卡匣站2,係設置有可在搬送路6上沿著X方向移動的晶圓搬送臂7。晶圓搬送臂7,係構成為亦可在收容於卡匣C之 晶圓W的晶圓排列方向(Z方向;垂直方向)上移動自如,可對排列於X方向之各卡匣C內的晶圓W,選擇性地進行存取。The cassette station 2 is capable of placing a plurality of cassettes C in a row at a predetermined position on the cassette mounting table 5 in the horizontal X direction. Further, the cassette transporting station 2 is provided with a wafer transfer arm 7 that is movable in the X direction on the transport path 6. The wafer transfer arm 7 is configured to be housed in the cassette C The wafer W is freely movable in the wafer array direction (Z direction; vertical direction), and can selectively access the wafer W arranged in each of the cassettes C in the X direction.

又,晶圓搬送臂7,係構成為以Z軸為中心而可在θ方向旋轉,且如後述構成為亦可對屬於處理站3側之第3處理單元群G3的移轉裝置(TRS)31進行存取。Further, the wafer transfer arm 7 is configured to be rotatable in the θ direction around the Z axis, and is configured as a transfer device (TRS) that can belong to the third processing unit group G3 on the processing station 3 side as will be described later. 31 access.

處理站3,係具備有將複數個處理單元作了多段配置的例如5個處理單元群G1~G5。在處理站3的正面側,係從卡匣站2側依序配置有第1處理單元群G1、第2處理單元群G2。又,在處理站3的背面側,係從卡匣站2側依序配置有第3處理單元群G3、第4處理單元群G4及第5處理單元群G5。在第3處理單元群G3與第4處理單元群G4之間,係設置有第1搬送機構110。第1搬送機構110,係構成為在第1處理單元群G1、第3處理單元群G3及第4處理單元群G4選擇性地進行存取,從而搬送晶圓W。在第4處理單元群G4與第5處理單元群G5之間,係設置有第2搬送機構120。第2搬送機構120,係構成為在第2處理單元群G2、第4處理單元群G4及第5處理單元群G5選擇性地進行存取,從而搬送晶圓W。The processing station 3 is provided with, for example, five processing unit groups G1 to G5 in which a plurality of processing units are arranged in multiple stages. On the front side of the processing station 3, the first processing unit group G1 and the second processing unit group G2 are sequentially arranged from the card station 2 side. Further, on the back side of the processing station 3, the third processing unit group G3, the fourth processing unit group G4, and the fifth processing unit group G5 are sequentially arranged from the card station 2 side. The first transport mechanism 110 is provided between the third processing unit group G3 and the fourth processing unit group G4. The first transport mechanism 110 is configured to selectively access the first processing unit group G1, the third processing unit group G3, and the fourth processing unit group G4 to transport the wafer W. The second transport mechanism 120 is provided between the fourth processing unit group G4 and the fifth processing unit group G5. The second transport mechanism 120 is configured to selectively access the second processing unit group G2, the fourth processing unit group G4, and the fifth processing unit group G5 to transport the wafer W.

在第1處理單元群G1,係如圖6所示,從下方依序重疊為5層:光阻塗佈單元(COT)10、11、12,具有將預定之處理液供給至晶圓W而進行處理的液處理單元,例如對晶圓W塗佈光阻液 的光阻塗佈處理處置;及底部塗佈單元(BARC)13、14,塗佈用於防止曝光時之光之反射的紫外線硬化樹脂液,而形成反射防止膜。在第2處理單元群G2,係從下方依序重疊為4層:顯像處理單元(DEV)21~24,對晶圓W施予顯像處理。As shown in FIG. 6, the first processing unit group G1 is sequentially stacked in five layers from the bottom: photoresist coating units (COT) 10, 11, and 12, and has a predetermined processing liquid supplied to the wafer W. a liquid processing unit for processing, for example, applying a photoresist solution to the wafer W The photoresist coating treatment; and the bottom coating unit (BARC) 13, 14 are coated with an ultraviolet curable resin liquid for preventing reflection of light during exposure to form an antireflection film. The second processing unit group G2 is sequentially superimposed into four layers from the lower side: development processing units (DEV) 21 to 24, and the developing process is applied to the wafer W.

另外,在第1處理單元群G1及第2處理單元群G2的最下層,係分別設置有用於對各處理單元群G1及G2內之前述液處理單元供給各種顯像液的化學藥劑室(CHM)25、26。在該化學藥劑室(CHM)25、26,包括有該新型之處理液供給系統。又,在第3處理單元群G3,係如圖7所示,從下方依序重疊為9層:溫調單元(TCP)30;移轉裝置(TRS)31,用於進行晶圓W之收授;及熱處理單元(ULHP)32~38,在精度高的溫度管理下,加熱處理晶圓W。在第4處理單元群G4,係例如從下方依序重疊為10層:高精度溫調單元(CPL)40;預烘乾單元(PAB)41~44,對光阻塗佈處理後的晶圓W進行加熱處理;及後烘烤單元(POST)45~49,對顯像處理後的晶圓W進行加熱處理。Further, in the lowermost layers of the first processing unit group G1 and the second processing unit group G2, chemical chemical chambers (CHM) for supplying various developing liquids to the liquid processing units in the respective processing unit groups G1 and G2 are provided. ) 25, 26. The new chemical liquid supply system is included in the chemical chambers (CHM) 25 and 26. Further, in the third processing unit group G3, as shown in FIG. 7, the first processing unit group G3 is sequentially superimposed into nine layers from the bottom: a temperature adjustment unit (TCP) 30, and a transfer device (TRS) 31 for performing wafer W reception. And heat treatment unit (ULHP) 32~38, heat treatment of wafer W under high temperature management. In the fourth processing unit group G4, for example, 10 layers are sequentially superposed from below: a high-precision temperature adjustment unit (CPL) 40; a pre-baking unit (PAB) 41 to 44, and a wafer after the photoresist coating process is applied. W performs heat treatment; and post-baking units (POST) 45 to 49 heat-process the wafer W after the development process.

在第5處理單元群G5,係從下方依序重疊為10層:複數個熱處理單元例如高精度溫調單元(CPL)50~53,對晶圓W進行熱處理;及後曝光烘烤單元(PEB)54~59,對曝光後的晶圓W進行加熱處理。The fifth processing unit group G5 is sequentially superposed into 10 layers from the bottom: a plurality of heat treatment units such as high-precision temperature adjustment units (CPL) 50 to 53 for heat treatment of the wafer W; and a post-exposure baking unit (PEB) 54~59, heat-treating the exposed wafer W.

又,在第1搬送機構110的X方向正方向側,係如圖5所示,配置有複數個處理單元,例如如圖7 所示,從下方依序重疊為4層:黏著單元(AD)80、81,用於對晶圓W進行疏水化處理;及加熱單元(HP)82、83,對晶圓W進行加熱。又,在第2搬送機構120的背面側,係例如配置有周邊曝光單元(WEE)84,該周邊曝光單元(WEE)84,係選擇性地只對晶圓W的邊緣部進行曝光。Further, in the positive direction side of the X direction of the first transport mechanism 110, as shown in FIG. 5, a plurality of processing units are arranged, for example, as shown in FIG. As shown, four layers are sequentially stacked from the bottom: adhesive units (AD) 80, 81 for hydrophobizing the wafer W, and heating units (HP) 82, 83 for heating the wafer W. Further, on the back side of the second transport mechanism 120, for example, a peripheral exposure unit (WEE) 84 is disposed, and the peripheral exposure unit (WEE) 84 selectively exposes only the edge portion of the wafer W.

又,如圖6所示,在卡匣站2、處理站3及介面部4之各區塊的上部,係具備有用於調節各區塊內的空調單元90。藉由該空調單元90,卡匣站2、處理站3及介面部4內,係可調整成預定的溫度及濕度。又,如圖7所示,在例如處理站3的上部,係分別設置有氣體供給單元91,該氣體供給單元91,係作為將預定氣體供給至第3處理單元群G3、第4處理單元群G4及第5處理單元群G5內的各裝置之例如FFU(風扇過濾單元)等的氣體供給手段。氣體供給單元91,係可在從被調整成預定之溫度、濕度的氣體去除雜質之後,以預定流量吹送該氣體。Moreover, as shown in FIG. 6, the upper part of each block of the cassette station 2, the processing station 3, and the interface part 4 is equipped with the air conditioning unit 90 in the inside of each block. The air conditioning unit 90, the cassette station 2, the processing station 3, and the dielectric surface 4 can be adjusted to a predetermined temperature and humidity. Further, as shown in FIG. 7, for example, a gas supply unit 91 for supplying a predetermined gas to the third processing unit group G3 and the fourth processing unit group is provided in the upper portion of the processing station 3, respectively. A gas supply means such as an FFU (Fan Filter Unit) of each of the devices in the G4 and the fifth processing unit group G5. The gas supply unit 91 can blow the gas at a predetermined flow rate after removing impurities from the gas adjusted to a predetermined temperature and humidity.

介面部4,係如圖5所示,從處理站3側依序具備有第1介面部100與第2介面部101。在第1介面部100中,晶圓搬送臂102,係配設於與第5處理單元群G5對應的位置。在晶圓搬送臂102之X方向的兩側,係分別設置有例如緩衝卡匣103(圖5的背面側)、104(圖5的正面側)。晶圓搬送臂102,係可對第5處理單元群G5內的熱處理裝置與緩衝卡匣103、104進行存取。在第2介面部101,係設置有晶圓搬送臂106,該晶圓搬送臂 106,係在朝向X方向而設置的搬送路徑105上移動。晶圓搬送臂106,係可在Z方向移動,且可繞θ方向旋轉,可對緩衝卡匣104與鄰接於第2介面部101之未圖示的曝光裝置,進行存取。因此,處理站3內的晶圓W,係可經由晶圓搬送臂102、緩衝卡匣104、晶圓搬送臂106,搬送至曝光裝置,又,曝光處理結束的晶圓W,係可經由晶圓搬送臂106、緩衝卡匣104、晶圓搬送臂102,搬送至處理站3內。As shown in FIG. 5, the interface 4 includes the first dielectric surface 100 and the second dielectric surface 101 in this order from the processing station 3 side. In the first dielectric surface portion 100, the wafer transfer arm 102 is disposed at a position corresponding to the fifth processing unit group G5. On both sides of the wafer transfer arm 102 in the X direction, for example, a buffer cassette 103 (back side in FIG. 5) and 104 (front side in FIG. 5) are provided. The wafer transfer arm 102 can access the heat treatment device and the buffer cassettes 103 and 104 in the fifth processing unit group G5. In the second dielectric surface 101, a wafer transfer arm 106 is provided, and the wafer transfer arm is provided. 106 moves on the transport path 105 provided in the X direction. The wafer transfer arm 106 is movable in the Z direction and rotatable in the θ direction, and can access the buffer cassette 104 and an exposure device (not shown) adjacent to the second dielectric surface 101. Therefore, the wafer W in the processing station 3 can be transported to the exposure device via the wafer transfer arm 102, the buffer cassette 104, and the wafer transfer arm 106, and the wafer W after the exposure process can pass through the crystal. The circular transfer arm 106, the buffer cassette 104, and the wafer transfer arm 102 are transported to the processing station 3.

另外,在上述實施形態中,雖說明了關於將該新型之處理液供給系統應用於半導體晶圓之塗佈/顯像處理系統之光阻液之配管迴路的情形,但亦可應用於作為洗淨液的稀釋劑或純水之供給管線或使用於顯像處理之顯像液的供給管線。又,即使是半導體晶圓以外的被處理基板例如FPD亦可進行應用。Further, in the above-described embodiment, the case where the new processing liquid supply system is applied to the piping circuit of the photoresist liquid of the coating/development processing system of the semiconductor wafer has been described, but it can also be applied as a washing. A thinner or pure water supply line for the clean liquid or a supply line for the developing liquid for the development process. Further, even a substrate to be processed other than a semiconductor wafer such as FPD can be applied.

71‧‧‧液供給瓶71‧‧‧Liquid supply bottle

72‧‧‧配管72‧‧‧Pipe

73‧‧‧中間儲槽供給閥73‧‧‧Intermediate tank supply valve

74‧‧‧中間儲槽74‧‧‧Intermediate storage tank

75‧‧‧中間儲槽排氣管75‧‧‧Intermediate storage tank exhaust pipe

76‧‧‧中間儲槽排氣閥76‧‧‧Intermediate tank exhaust valve

77‧‧‧過濾器一次側配管77‧‧‧Filter primary side piping

78‧‧‧過濾器排氣配管78‧‧‧Filter exhaust piping

79‧‧‧過濾器排氣閥79‧‧‧Filter exhaust valve

98‧‧‧過濾器98‧‧‧Filter

99‧‧‧泵二次配管99‧‧‧Pump secondary piping

111‧‧‧上限液面感測器111‧‧‧Upper level liquid level sensor

112‧‧‧下限液面感測器112‧‧‧Limited liquid level sensor

113‧‧‧過濾器二次配管113‧‧‧Filter secondary piping

114‧‧‧磁鐵泵114‧‧‧ Magnet pump

115‧‧‧分歧管部115‧‧‧Different Department

116‧‧‧循環配管116‧‧‧Recycling piping

117‧‧‧循環閥117‧‧‧Circulation valve

118‧‧‧分配原始閥118‧‧‧Distribution of the original valve

119‧‧‧流量計119‧‧‧ flowmeter

130a‧‧‧分配閥130a‧‧‧Distribution valve

130b‧‧‧分配閥130b‧‧‧Distribution valve

131a‧‧‧噴嘴供給管131a‧‧‧Nozzle supply tube

131b‧‧‧噴嘴供給管131b‧‧‧Nozzle supply tube

132a‧‧‧液供給噴嘴132a‧‧‧Liquid supply nozzle

132b‧‧‧液供給噴嘴132b‧‧‧Liquid supply nozzle

Claims (6)

一種處理液供給配管迴路,係在設置於用以從液供給噴嘴將處理液供給至基板之表面而施予處理的液處理裝置,且構成於前述液供給噴嘴與前述處理液的液供給部之間的處理液供給配管迴路中,其特徵係,具備有:中間儲槽,暫時儲存從液供給部通過供給配管所供給的處理液;排氣配管,連接於前述中間儲槽之上方,用於對內部之前述處理液進行減壓而使其脫氣;送液泵,從前述中間儲槽之出口側,吸取前述處理液,使吐出動作連續;開關閥,被設置於形成為前述送液泵之吐出側的前述送液泵二次側配管與前述液供給噴嘴之間的配管,進行處理液朝向前述液供給噴嘴側流動之開關;循環配管,從前述開關閥之一次側配管分歧,連通於前述中間儲槽,使前述處理液循環;及循環閥,對前述循環配管之前述處理液的流動進行開關。A processing liquid supply piping circuit that is provided in a liquid processing apparatus that is supplied to a surface of a substrate for supplying a processing liquid from a liquid supply nozzle to a substrate, and is configured in the liquid supply nozzle and the liquid supply unit of the processing liquid The processing liquid supply piping circuit is characterized in that: an intermediate storage tank is provided to temporarily store the processing liquid supplied from the liquid supply unit through the supply piping; and an exhaust pipe is connected above the intermediate storage tank for The internal treatment liquid is depressurized and deaerated; the liquid supply pump draws the treatment liquid from the outlet side of the intermediate storage tank to continuously discharge the discharge operation; and the on-off valve is provided to be formed as the liquid supply pump a pipe between the secondary pipe of the liquid supply pump and the liquid supply nozzle on the discharge side, and a switch that flows the processing liquid toward the liquid supply nozzle side; the circulation pipe branches from the primary side of the switching valve to communicate with each other The intermediate storage tank circulates the treatment liquid, and a circulation valve that switches the flow of the treatment liquid in the circulation piping. 如申請專利範圍第1項之處理液供給配管迴路,其中,前述送液泵,係磁鐵泵。The processing liquid supply piping circuit according to claim 1, wherein the liquid feeding pump is a magnet pump. 如申請專利範圍第1或2項之處理液供給配管迴路,其中,在前述中間儲槽與前述送液泵之間的配管,設置有過 濾器。The processing liquid supply piping circuit according to claim 1 or 2, wherein the piping between the intermediate storage tank and the liquid feeding pump is provided filter. 如申請專利範圍第1或2項之處理液供給配管迴路,其中,在前述送液泵二次側配管,係設置有過濾器。A processing liquid supply piping circuit according to the first or second aspect of the invention, wherein the second side of the liquid feeding pump is provided with a filter. 如申請專利範圍第1或2項之處理液供給配管迴路,其中,具有:控制部,在分歧成前述循環配管的前方,設置有檢測前述處理液之流量的流量計或檢測前述處理液之壓力的壓力計,以使檢測值維持預定之設定的方式,控制前述送液泵的驅動部。The treatment liquid supply piping circuit according to the first or second aspect of the invention, wherein the control unit includes a flow meter for detecting a flow rate of the treatment liquid or a pressure for detecting the treatment liquid in front of the circulation piping. The pressure gauge controls the driving portion of the liquid feeding pump in such a manner that the detected value is maintained at a predetermined setting. 如申請專利範圍第1或2項之處理液供給配管迴路,其中,具有:在前述循環閥與中間儲槽之間,係設置有旁通閥,該旁通閥,係切換處理液流至中間儲槽的流路與不經由前述中間儲槽而連接於前述中間儲槽之出口側之配管的旁通流路。The processing liquid supply piping circuit according to claim 1 or 2, further comprising: a bypass valve provided between the circulation valve and the intermediate storage tank, wherein the bypass valve switches the processing liquid to the middle The flow path of the storage tank and the bypass flow path connected to the piping on the outlet side of the intermediate storage tank without passing through the intermediate storage tank.
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TWI800623B (en) * 2018-03-23 2023-05-01 日商東京威力科創股份有限公司 Liquid processing device and liquid processing method

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US10295903B2 (en) * 2016-08-25 2019-05-21 Tokyo Electron Limited Substrate processing method, substrate processing apparatus and storage medium
KR102616524B1 (en) * 2020-07-22 2023-12-26 세메스 주식회사 Substrate processing apparatus, treatment solution supply apparatus and treatment solution supply method
JP2022187235A (en) 2021-06-07 2022-12-19 東京エレクトロン株式会社 Process liquid supply device, process liquid supply method, and storage medium

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TWI675398B (en) * 2016-02-16 2019-10-21 日商斯庫林集團股份有限公司 Pump apparatus and substrate treating apparatus
US10507484B2 (en) 2016-02-16 2019-12-17 SCREEN Holdings Co., Ltd. Pump apparatus and substrate treating apparatus
TWI800623B (en) * 2018-03-23 2023-05-01 日商東京威力科創股份有限公司 Liquid processing device and liquid processing method

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