JP2007273792A - Substrate treating device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate treating device which prevents operation failure of an exposing device in exposure treatment by a liquid immersion method. <P>SOLUTION: The substrate treating device 500 includes an indexer block 9, a treatment block 10 for reflection prevention films, a treatment block 11 for resist films, a development treatment block 12, a treatment block 13 for resist cover films, a resist cover film removal block 14, and an interface block 15. An exposure device 16 is arranged adjacent to the interface block 15. In the treatment block 13 for resist cover films, operation of each constitution element is detected by a plurality of cameras and sensors. Based on the results, whether or not a resist cover film is formed normally on a substrate W is judged. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus for processing a substrate.

  In order to perform various processes on various substrates such as a semiconductor substrate, a liquid crystal display substrate, a plasma display substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, and a photomask substrate, It is used.

  In such a substrate processing apparatus, generally, a plurality of different processes are continuously performed on a single substrate. The substrate processing apparatus described in Patent Document 1 includes an indexer block, an antireflection film processing block, a resist film processing block, a development processing block, and an interface block. An exposure apparatus that is an external apparatus separate from the substrate processing apparatus is disposed adjacent to the interface block.

  In the substrate processing apparatus described above, the substrate carried in from the indexer block is configured such that after the formation of the antireflection film and the coating process of the resist film are performed in the antireflection film processing block and the resist film processing block, the interface block is To the exposure apparatus. After the exposure process is performed on the resist film on the substrate in the exposure apparatus, the substrate is transported to the development processing block via the interface block. After a resist pattern is formed by performing development processing on the resist film on the substrate in the development processing block, the substrate is transported to the indexer block.

  In recent years, miniaturization of resist patterns has become an important issue as the density and integration of devices increase. In a conventional general exposure apparatus, exposure processing is performed by reducing and projecting a reticle pattern onto a substrate via a projection lens. However, in such a conventional exposure apparatus, since the line width of the exposure pattern is determined by the wavelength of the light source of the exposure apparatus, there is a limit to the miniaturization of the resist pattern.

Accordingly, a liquid immersion method has been proposed as a projection exposure method that enables further miniaturization of the exposure pattern (see, for example, Patent Document 2). In the projection exposure apparatus of Patent Document 2, a liquid is filled between the projection optical system and the substrate, and the exposure light on the substrate surface can be shortened. Thereby, the exposure pattern can be further miniaturized.
JP 2003-324139 A International Publication No. 99/49504 Pamphlet

  Prior to the exposure processing, various film forming processes are performed on the substrate by a substrate processing apparatus as disclosed in Patent Document 1. In the course of this film forming process, the surface of the film formed on the substrate may become non-uniform.

  In the projection exposure apparatus of Patent Document 2, a liquid is supplied between the projection optical system and the substrate. Here, if the surface of the substrate is in a non-uniform state, the projection optical system and the substrate are not in contact with each other. In this case, the liquid may not be held and the liquid may be repelled, or in the worst case, the liquid may flow out of the substrate.

  In this case, the electrical system of the exposure apparatus is damaged by the liquid that has flowed out, resulting in malfunction of the exposure apparatus, or exposure processing is performed on a portion of the substrate that is not covered with liquid, resulting in poor exposure of the substrate. May occur.

  In addition, the liquid that flows out of the substrate includes particles in the atmosphere and becomes a contaminant, which may cause a processing failure of the substrate.

  An object of the present invention is to provide a substrate processing apparatus in which malfunction of an exposure apparatus and substrate processing failure are prevented during exposure processing by a liquid immersion method.

  (1) A substrate processing apparatus according to the present invention is a substrate processing apparatus disposed adjacent to an exposure apparatus that performs exposure processing on a substrate by a liquid immersion method, and a processing unit for processing the substrate, A transfer unit for transferring the substrate between the processing unit and the exposure apparatus, the processing unit including a photosensitive film forming unit that forms a photosensitive film made of a photosensitive material on the surface of the substrate; A protective film forming unit that forms a protective film that protects the film, and a determination unit that determines whether or not the protective film is normally formed in the protective film formation unit. When the formation is determined to be normal, the substrate is transported to the exposure apparatus, and when the determination means determines that the formation of the protective film is not normal, the exposure apparatus is not transported to the exposure apparatus and waits for the substrate. is there.

  A substrate processing apparatus according to the present invention is disposed adjacent to an exposure apparatus that performs exposure processing on a substrate by a liquid immersion method. In the substrate processing apparatus, a predetermined process is performed on the substrate by the processing unit, and the substrate is transferred between the processing unit and the exposure apparatus by the transfer unit.

  In the processing section, a photosensitive film made of a photosensitive material is formed on the surface of the substrate by the photosensitive film forming unit, and a protective film for protecting the photosensitive film is formed by the protective film forming unit.

  When the protective film is formed, it is determined by the determining means whether or not the protective film is normally formed. If the determination unit determines that the protective film is normally formed, the substrate is transferred to the exposure apparatus by the transfer unit. On the other hand, if it is determined by the determination means that the protective film is not formed normally, the substrate is not transported to the exposure apparatus and stands by at the transfer unit.

  Accordingly, in the exposure apparatus, only the substrate on which the protective film is normally formed is subjected to exposure processing by the liquid immersion method. Therefore, the liquid supplied onto the substrate during the exposure process is prevented from flowing out of the substrate. Therefore, damage to the electrical system and the like of the exposure apparatus is prevented, and exposure processing is prevented from being performed on the portion of the substrate not covered with the liquid. As a result, malfunction of the exposure apparatus and exposure failure of the substrate are prevented.

  In addition, the liquid that has flowed out of the substrate is prevented from being contaminated with particles in the atmosphere, and processing defects of the substrate W are prevented.

  (2) The transfer unit when the determination unit determines that the formation of the protective film is normal and the transfer unit when the determination unit determines that the protective film is not formed normally by the staying time of the substrate in the exposure apparatus and the determination unit The staying time of the substrate at may be set equal.

  In this case, the processing interval between the plurality of substrates before and after the exposure processing, even when the plurality of continuously processed substrates includes a substrate with a protective film formed normally and a substrate with which the protective film is not formed normally. Is prevented from being disturbed. Thereby, only the substrate on which the protective film is normally formed can be transported to the exposure apparatus while maintaining the throughput.

  (3) The transfer unit includes a substrate storage unit that temporarily stores the substrate, and a transport unit that transports the substrate between the processing unit, the substrate storage unit, and the exposure apparatus. The substrate may be transported to the exposure apparatus when it is determined that the formation of the protective film is normal, and may be stored in the substrate storage unit when it is determined by the determining means that the formation of the protective film is not normal.

  In this case, the substrate on which the protective film is normally formed is transported from the processing unit to the exposure apparatus by the transport unit, and the substrate on which the protective film is not normally formed is stored in the substrate storage unit of the transfer unit by the transport unit. The

  Accordingly, the substrate on which the protective film is normally formed can be transported to the exposure apparatus, and the substrate on which the protective film is not normally formed can be easily put on standby by the delivery unit.

  (4) The delivery unit further includes a drying unit that dries the substrate after the exposure process by the exposure apparatus, and the transport unit performs the exposure process by the exposure apparatus when the determination unit determines that the protective film is normally formed. The substrate after being stored by the substrate storage unit when the determination unit determines that the protective film is not properly formed. You may convey to.

  In this case, the substrate on which the protective film is normally formed is dried from the drying unit after the exposure process, and then transported to the processing unit. Thereby, even if a liquid adheres to the substrate in the exposure apparatus, the liquid can be prevented from falling into the substrate processing apparatus. As a result, malfunction of the substrate processing apparatus can be prevented. In addition, by drying the substrate, it is possible to prevent dust and the like in the atmosphere from adhering to the liquid attached to the substrate during the exposure process. Thereby, the processing defect of a board | substrate can be prevented.

  On the other hand, the substrate on which the protective film is not normally formed is transported to the processing unit without being subjected to exposure processing in the exposure apparatus and drying by the drying unit after storage by the substrate storage unit. In this case, since the liquid does not adhere to the substrate, it is not necessary to dry the substrate. Therefore, the processing cost can be reduced by omitting unnecessary processing for a defective substrate.

  (5) The delivery unit further includes a cleaning unit that cleans the substrate before the exposure process by the exposure apparatus, and the transport unit performs the exposure process by the exposure apparatus when the determination unit determines that the protective film is normally formed. Before transporting the substrate to the cleaning unit, transporting the substrate after cleaning by the cleaning unit to the exposure device, transporting the substrate after the exposure processing by the exposure device to the processing unit, the judgment means that the protective film is not formed normally If determined, the substrate stored by the substrate storage unit may be transported to the processing unit.

  In this case, the substrate on which the protective film is normally formed is cleaned by the cleaning unit before the exposure process. Thereby, dust or the like attached to the surface of the substrate in the processing step before the exposure processing can be removed. As a result, contamination in the exposure apparatus can be prevented.

  On the other hand, the substrate on which the protective film is not normally formed is transferred to the processing unit without being cleaned by the cleaning unit and exposed in the exposure apparatus after being stored by the substrate storage unit. This eliminates unnecessary processing for defective substrates, thereby reducing processing costs.

  (6) The protective film forming unit has a nozzle that discharges the coating liquid for the protective film, and the determination unit is detected by a nozzle detector that detects a discharge state of the coating liquid discharged from the nozzle, and a nozzle detector. A discharge state determination unit that determines whether or not the formation of the protective film in the protective film forming unit is normal based on the discharged state.

  In this case, in the protective film forming unit, the discharge state of the coating liquid discharged from the nozzle is detected by the nozzle detector. Based on the discharge state detected by the nozzle detector, the discharge state determination unit determines whether or not the formation of the protective film in the protective film forming unit is normal.

  Thus, it is possible to determine whether or not the formation of the protective film is normal with a simple configuration.

  (7) The determination unit includes an imaging device that images the substrate on which the protective film is formed in the protective film forming unit, and whether or not the protective film is normally formed in the protective film forming unit based on an image obtained by the imaging device. And an image determination unit that determines whether or not.

  In this case, the substrate on which the protective film is formed is imaged by the imaging device in the protective film forming unit. Based on the image obtained by the imaging device, the image determination unit determines whether or not the formation of the protective film in the protective film forming unit is normal.

  With such a configuration, it is possible to accurately determine whether or not the formation of the protective film is normal.

  (8) The determining means is a film thickness measuring device for measuring the thickness of the protective film formed on the substrate in the protective film forming unit, and the protective film forming unit based on the thickness of the protective film measured by the film thickness measuring device. A film thickness determination unit that determines whether or not the formation of the protective film is normal.

  In this case, in the protective film forming unit, the thickness of the protective film formed on the substrate is measured by the film thickness measuring instrument. Based on the thickness measured by the film thickness measuring device, the film thickness determination unit determines whether or not the formation of the protective film in the protective film forming unit is normal.

  With such a simple configuration, it is possible to accurately determine whether or not the formation of the protective film is normal.

  (9) The processing unit further includes a pump that supplies the coating liquid for the protective film to the protective film forming unit, and the determination unit is measured by a pump pressure measuring device that measures the supply pressure of the pump and a pump pressure measuring device. And a pump pressure determination unit that determines whether or not the formation of the protective film in the protective film forming unit is normal based on the supply pressure of the pump.

  When the supply pressure of the pump is not appropriate, the protective film is not uniformly formed on the photosensitive film in the protective film forming unit.

  Therefore, the supply pressure of the pump when the coating liquid for the protective film is supplied from the pump to the protective film forming unit is measured by a pump pressure measuring device. Based on the supply pressure measured by the pump pressure measuring device, the pump pressure determination unit determines whether or not the formation of the protective film in the protective film forming unit is normal.

  Thereby, it is possible to determine whether or not the formation of the protective film is normal with a simple configuration.

  (10) The processing unit further includes a motor that drives the pump, and the determination unit includes a step-out detector that detects whether or not the motor has stepped out, and whether or not the motor has stepped out detected by the step-out detector. And a step-out determination unit that determines whether or not the formation of the protective film in the protective film forming unit is normal.

  When the motor driving the pump steps out, the protective film is not uniformly formed on the photosensitive film in the protective film forming unit.

  Therefore, the step-out detector detects whether or not the motor driving the pump is out of step. Based on the presence or absence of motor step-out detected by the step-out detector, the step-out determination unit determines whether or not the formation of the protective film in the protective film forming unit is normal.

  Thereby, it is possible to determine whether or not the formation of the protective film is normal with a simple configuration.

  (11) The processing unit further includes a supply pipe that guides the coating liquid for the protective film to the protective film forming unit, and the determination unit measures the flow rate of the coating liquid supplied to the protective film forming unit through the supply pipe. And a flow rate determination unit that determines whether or not the formation of the protective film in the protective film forming unit is normal based on the flow rate measured by the flow rate measuring device.

  When the flow rate of the coating liquid supplied to the protective film forming unit through the supply pipe is not appropriate, the protective film is not uniformly formed on the photosensitive film in the protective film forming unit.

  Therefore, the flow rate of the coating liquid supplied to the protective film forming unit through the supply pipe is measured by a flow rate measuring device. Based on the flow rate detected by the flow meter, the step-out determination unit determines whether or not the formation of the protective film in the protective film forming unit is normal.

  Thereby, it is possible to determine whether or not the formation of the protective film is normal with a simple configuration.

  According to the present invention, in the exposure apparatus, only the substrate on which the protective film is normally formed is subjected to the exposure process by the liquid immersion method. Therefore, the liquid supplied onto the substrate during the exposure process is prevented from flowing out of the substrate. As a result, malfunction of the exposure apparatus and processing failure of the substrate are prevented.

  Hereinafter, a substrate processing apparatus according to an embodiment of the present invention will be described with reference to the drawings. In the following description, the substrate refers to a semiconductor substrate, a liquid crystal display substrate, a plasma display substrate, a photomask glass substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, a photomask substrate, and the like. Say.

(A) First Embodiment (1) Configuration of Substrate Processing Apparatus FIG. 1 is a plan view of a substrate processing apparatus according to a first embodiment of the present invention. In FIG. 1 and FIGS. 2 to 4, 15, and 16 described later, arrows that indicate the X direction, the Y direction, and the Z direction orthogonal to each other are attached in order to clarify the positional relationship. The X direction and the Y direction are orthogonal to each other in the horizontal plane, and the Z direction corresponds to the vertical direction. In each direction, the direction in which the arrow points is the + direction, and the opposite direction is the-direction. Further, the rotation direction around the Z direction is defined as the θ direction.

  As shown in FIG. 1, the substrate processing apparatus 500 includes an indexer block 9, an antireflection film processing block 10, a resist film processing block 11, a development processing block 12, a resist cover film processing block 13, and a resist cover film removal block. 14 and an interface block 15. An exposure device 16 is arranged adjacent to the interface block 15. In the exposure apparatus 16, the substrate W is subjected to an exposure process by a liquid immersion method.

  Hereinafter, each of the indexer block 9, the antireflection film processing block 10, the resist film processing block 11, the development processing block 12, the resist cover film processing block 13, the resist cover film removal block 14 and the interface block 15 is referred to as a processing block. Call.

  The indexer block 9 includes a main controller (control unit) 30 that controls the operation of each processing block, a plurality of carrier platforms 40, and an indexer robot IR. The indexer robot IR is provided with a hand IRH for delivering the substrate W.

  The antireflection film processing block 10 includes antireflection film heat treatment units 100 and 101, an antireflection film application processing unit 50, and a first central robot CR1. The antireflection film coating processing unit 50 is provided opposite to the antireflection film heat treatment units 100 and 101 with the first central robot CR1 interposed therebetween. The first center robot CR1 is provided with hands CRH1 and CRH2 for transferring the substrate W up and down.

  A partition wall 17 is provided between the indexer block 9 and the antireflection film processing block 10 for shielding the atmosphere. In the partition wall 17, substrate platforms PASS 1 and PASS 2 for transferring the substrate W between the indexer block 9 and the anti-reflection film processing block 10 are provided close to each other in the vertical direction. The upper substrate platform PASS1 is used when transporting the substrate W from the indexer block 9 to the antireflection film processing block 10, and the lower substrate platform PASS2 is used to transport the substrate W to the antireflection film processing block. It is used when transporting from 10 to the indexer block 9.

  The substrate platforms PASS1, PASS2 are provided with optical sensors (not shown) that detect the presence or absence of the substrate W. Thereby, it is possible to determine whether or not the substrate W is placed on the substrate platforms PASS1 and PASS2. The substrate platforms PASS1, PASS2 are provided with a plurality of support pins fixedly installed. The optical sensor and the support pin are also provided in the same manner on the substrate platforms PASS3 to PASS13 described later.

  The resist film processing block 11 includes resist film heat treatment units 110 and 111, a resist film coating processing unit 60, and a second central robot CR2. The resist film application processing unit 60 is provided to face the resist film heat treatment units 110 and 111 with the second central robot CR2 interposed therebetween. The second center robot CR2 is provided with hands CRH3 and CRH4 for transferring the substrate W up and down.

  A partition wall 18 is provided between the antireflection film processing block 10 and the resist film processing block 11 for shielding the atmosphere. The partition wall 18 is provided with substrate platforms PASS3 and PASS4 that are close to each other in the vertical direction for transferring the substrate W between the anti-reflection film processing block 10 and the resist film processing block 11. The upper substrate platform PASS3 is used when the substrate W is transported from the antireflection film processing block 10 to the resist film processing block 11, and the lower substrate platform PASS4 is used to transfer the substrate W to the resist film. It is used when transporting from the processing block 11 to the processing block 10 for antireflection film.

  The development processing block 12 includes development heat treatment units 120 and 121, a development processing unit 70, and a third central robot CR3. The development processing unit 70 is provided to face the development heat treatment units 120 and 121 with the third central robot CR3 interposed therebetween. The third center robot CR3 is provided with hands CRH5 and CRH6 for transferring the substrate W up and down.

  A partition wall 19 is provided between the resist film processing block 11 and the development processing block 12 for shielding the atmosphere. In the partition wall 19, substrate platforms PASS 5 and PASS 6 for transferring the substrate W between the resist film processing block 11 and the development processing block 12 are provided close to each other in the vertical direction. The upper substrate platform PASS5 is used when the substrate W is transported from the resist film processing block 11 to the development processing block 12, and the lower substrate platform PASS6 is used to transfer the substrate W from the development processing block 12 to the resist processing block 12. Used when transported to the film processing block 11.

  The resist cover film processing block 13 includes resist cover film heat treatment units 130 and 131, a resist cover film coating processing unit 80, and a fourth central robot CR4. The resist cover film coating processing unit 80 is provided to face the resist cover film heat treatment units 130 and 131 with the fourth central robot CR4 interposed therebetween. The fourth center robot CR4 is provided with hands CRH7 and CRH8 for delivering the substrate W up and down.

  A partition wall 20 is provided between the development processing block 12 and the resist cover film processing block 13 for shielding the atmosphere. The partition wall 20 is provided with substrate platforms PASS 7 and PASS 8 that are adjacent to each other in the vertical direction for transferring the substrate W between the development processing block 12 and the resist cover film processing block 13. The upper substrate platform PASS7 is used when the substrate W is transferred from the development processing block 12 to the resist cover film processing block 13, and the lower substrate platform PASS8 is used to process the substrate W on the resist cover film. Used when transported from the block 13 to the development processing block 12.

  The resist cover film removal block 14 includes post-exposure baking heat treatment units 140 and 141, a resist cover film removal processing unit 90, and a fifth central robot CR5. The post-exposure bake heat treatment unit 141 is adjacent to the interface block 15 and includes substrate platforms PASS11 and PASS12 as described later. The resist cover film removal processing unit 90 is provided to face the post-exposure bake heat treatment units 140 and 141 with the fifth central robot CR5 interposed therebetween. The fifth center robot CR5 is provided with hands CRH9 and CRH10 for transferring the substrate W up and down.

  A partition wall 21 is provided between the resist cover film processing block 13 and the resist cover film removal block 14 for shielding the atmosphere. The partition wall 21 is provided with substrate platforms PASS9 and PASS10 adjacent to each other in the vertical direction for transferring the substrate W between the resist cover film processing block 13 and the resist cover film removal block. The upper substrate platform PASS9 is used when the substrate W is transferred from the resist cover film processing block 13 to the resist cover film removal block 14, and the lower substrate platform PASS10 is used to transfer the substrate W to the resist cover film. It is used when transporting from the removal block 14 to the resist cover film processing block 13.

  The interface block 15 includes a sending buffer unit SBF, a first cleaning / drying processing unit SD1, a sixth central robot CR6, an edge exposure unit EEW, a return buffer unit RBF, a placement / cooling unit PASS-CP (hereinafter referred to as P-). Abbreviated as CP), a substrate platform PASS13, an interface transport mechanism IFR, and a second cleaning / drying processing unit SD2. The first cleaning / drying processing unit SD1 performs cleaning and drying processing of the substrate W before the exposure processing, and the second cleaning / drying processing unit SD2 performs cleaning and drying processing of the substrate W after the exposure processing. Do. Details of the first and second cleaning / drying processing units SD1 and SD2 will be described later.

  The sixth central robot CR6 is provided with hands CRH11 and CRH12 (see FIG. 4) for delivering the substrate W up and down, and a hand H1 for delivering the substrate W to the interface transport mechanism IFR. , H2 (see FIG. 4) are provided above and below. Details of the interface block 15 will be described later.

  In the substrate processing apparatus 500 according to the present embodiment, an indexer block 9, an antireflection film processing block 10, a resist film processing block 11, a development processing block 12, a resist cover film processing block 13, along the Y direction, The resist cover film removal block 14 and the interface block 15 are arranged in order.

  2 is a schematic side view of the substrate processing apparatus 500 of FIG. 1 viewed from the + X direction, and FIG. 3 is a schematic side view of the substrate processing apparatus 500 of FIG. 1 viewed from the −X direction. 2 mainly shows what is provided on the + X side of the substrate processing apparatus 500, and FIG. 3 mainly shows what is provided on the −X side of the substrate processing apparatus 500.

  First, the configuration on the + X side of the substrate processing apparatus 500 will be described with reference to FIG. As shown in FIG. 2, in the antireflection film coating processing unit 50 (see FIG. 1) of the antireflection film processing block 10, three coating units BARC are vertically stacked. Each coating unit BARC includes a spin chuck 51 that rotates while adsorbing and holding the substrate W in a horizontal posture, and a supply nozzle 52 that supplies a coating liquid for an antireflection film to the substrate W held on the spin chuck 51.

  A storage section for storing fluid-related equipment such as a pipe, a joint, a valve, a flow meter, a regulator, a pump, a temperature controller, and a storage tank for storing a coating liquid for the antireflection film, below the antireflection film processing block 10 10A is provided.

  In the resist film coating processing section 60 (see FIG. 1) of the resist film processing block 11, three coating units RES are stacked in a vertical direction. Each coating unit RES includes a spin chuck 61 that rotates while adsorbing and holding the substrate W in a horizontal posture, and a supply nozzle 62 that supplies a coating liquid for a resist film to the substrate W held on the spin chuck 61.

  Below the resist film processing block 11, there is a storage section 11A for storing fluid-related equipment such as pipes, joints, valves, flow meters, regulators, pumps, temperature controllers, and storage tanks for storing resist film coating liquid. Is provided.

  In the development processing unit 70 of the development processing block 12, five development processing units DEV are stacked one above the other. Each development processing unit DEV includes a spin chuck 71 that rotates by sucking and holding the substrate W in a horizontal posture, and a supply nozzle 72 that supplies the developer to the substrate W held on the spin chuck 71.

  Below the development processing block 12, there is provided a storage portion 12A for storing fluid-related devices such as pipes, joints, valves, flow meters, regulators, pumps, temperature controllers, and storage tanks for storing the developer.

  In the resist cover film coating processing unit 80 of the resist cover film processing block 13, three coating units COV are stacked one above the other. Each coating unit COV includes a spin chuck 81 that rotates while adsorbing and holding the substrate W in a horizontal posture, and a supply nozzle 82 that supplies a coating liquid for the resist cover film to the substrate W held on the spin chuck 81. As a coating solution for the resist cover film, a material having a low affinity with the resist and water (a material having low reactivity with the resist and water) can be used. For example, a fluororesin. The coating unit COV forms a resist cover film on the resist film formed on the substrate W by applying a coating liquid onto the substrate W while rotating the substrate W.

  Below the resist cover film processing block 13 is a storage section for storing fluid-related equipment such as piping, joints, valves, flow meters, regulators, pumps, temperature controllers, and storage tanks for storing the resist cover film coating liquid. 13A is provided.

  Each coating unit COV and the storage unit 13A are provided with a plurality of cameras or sensors (see FIG. 5 described later) that detect the operation of each component. Details will be described later.

  In the resist cover film removal processing unit 90 of the resist cover film removal block 14, three removal units REM are vertically stacked. Each removal unit REM includes a spin chuck 91 that rotates while adsorbing and holding the substrate W in a horizontal posture, and a supply nozzle 92 that supplies a peeling liquid (for example, a fluororesin) to the substrate W held on the spin chuck 91. The removal unit REM removes the resist cover film formed on the substrate W by applying a stripping solution onto the substrate W while rotating the substrate W.

  The method for removing the resist cover film in the removal unit REM is not limited to the above example. For example, the resist cover film may be removed by supplying a stripping solution onto the substrate W while moving the slit nozzle above the substrate W.

  A storage portion 14A for storing fluid-related equipment such as a pipe, a joint, a valve, a flow meter, a regulator, a pump, a temperature controller, and a storage tank for storing a stripping solution is provided below the resist cover film removal block 14. It has been.

  On the + X side in the first interface block 15, an edge exposure unit EEW and three second cleaning / drying processing units SD2 are stacked in a vertical direction. Each edge exposure unit EEW includes a spin chuck 98 that rotates by attracting and holding the substrate W in a horizontal posture, and a light irradiator 99 that exposes the periphery of the substrate W held on the spin chuck 98.

  Next, the configuration on the −X side of the substrate processing apparatus 500 will be described with reference to FIG. 3. As shown in FIG. 3, two heating units (hot plates) HP and two cooling units (cooling plates) CP are provided in the antireflection film heat treatment units 100 and 101 of the antireflection film processing block 10, respectively. Laminated. In addition, in the antireflection film heat treatment units 100 and 101, local controllers LC for controlling the temperatures of the heating unit HP and the cooling unit CP are respectively arranged at the top.

  Two heating units HP and two cooling units CP are stacked in the resist film heat treatment sections 110 and 111 of the resist film processing block 11, respectively. In addition, in the resist film heat treatment units 110 and 111, local controllers LC for controlling the temperatures of the heating unit HP and the cooling unit CP are respectively arranged at the top.

  In the development heat treatment sections 120 and 121 of the development processing block 12, two heating units HP and two cooling units CP are respectively stacked. Further, in the development heat treatment sections 120 and 121, local controllers LC for controlling the temperatures of the heating unit HP and the cooling unit CP are respectively arranged at the top.

  In the resist cover film heat treatment section 130 of the resist cover film processing blocks 130 and 131, two heating units HP and two cooling units CP are respectively stacked. In addition, in the resist cover film heat treatment sections 130 and 131, local controllers LC for controlling the temperatures of the heating unit HP and the cooling unit CP are respectively arranged at the top.

  In the post-exposure baking heat treatment section 140 of the resist cover film removal block 14, two heating units HP and two cooling units CP are stacked one above the other, and the two post-exposure baking heat treatment section 141 has two heating units. The unit HP, the two cooling units CP, and the substrate platforms PASS11 and PASS12 are stacked one above the other. In addition, in the post-exposure bake heat treatment sections 140 and 141, local controllers LC for controlling the temperatures of the heating unit HP and the cooling unit CP are arranged at the top.

  Next, the interface block 15 will be described in detail with reference to FIG.

  FIG. 4 is a schematic side view of the interface block 15 as viewed from the + Y side. As shown in FIG. 4, in the interface block 15, on the −X side, a feed buffer unit SBF and three first cleaning / drying processing units SD1 are stacked. In the interface block 15, an edge exposure unit EEW is disposed at the upper part on the + X side.

  Below the edge exposure unit EEW, a return buffer unit RBF, two placement / cooling units P-CP, and a substrate platform PASS13 are stacked in a vertical direction at a substantially central portion in the interface block 15. Below the edge exposure unit EEW, on the + X side in the interface block 15, three second cleaning / drying processing units SD2 are vertically stacked.

  A sixth center robot CR6 and an interface transport mechanism IFR are provided in the lower part of the interface block 15. The sixth central robot CR6 includes a feed buffer unit SBF and a first cleaning / drying processing unit SD, an edge exposure unit EEW, a return buffer unit RBF, a placement / cooling unit P-CP, and a substrate platform PASS13. It is provided so that it can move up and down and rotate between them. The interface transport mechanism IFR is provided to be movable up and down and rotatable between the return buffer unit RBF, the placement / cooling unit P-CP, the substrate platform PASS13, and the second cleaning / drying processing unit SD2. It has been.

(2) Operation of Substrate Processing Apparatus Next, the operation of the substrate processing apparatus 500 according to the present embodiment will be described with reference to FIGS.

(2-1) Operation of Indexer Block to Resist Cover Film Removal Block First, the operation of the indexer block 9 to the resist cover film removal block 14 will be briefly described.

  On the carrier mounting table 40 of the indexer block 9, a carrier C that stores a plurality of substrates W in multiple stages is loaded. The indexer robot IR takes out the unprocessed substrate W stored in the carrier C using the hand IRH. Thereafter, the indexer robot IR rotates in the ± θ direction while moving in the ± X direction, and places the unprocessed substrate W on the substrate platform PASS1.

  In the present embodiment, a front opening unified pod (FOUP) is adopted as the carrier C. However, the present invention is not limited to this, and an OC (open cassette) that exposes the standard mechanical interface (SMIF) pod and the storage substrate W to the outside air. ) Etc. may be used.

  Further, the indexer robot IR, the first to sixth center robots CR1 to CR6, and the interface transport mechanism IFR are each provided with a direct-acting transport robot that slides linearly with respect to the substrate W and moves the hand back and forth. Although it is used, the present invention is not limited to this, and an articulated transfer robot that linearly moves the hand forward and backward by moving the joint may be used.

  The unprocessed substrate W placed on the substrate platform PASS1 is received by the first central robot CR1 of the antireflection film processing block 10. The first center robot CR1 carries the substrate W into the antireflection film heat treatment units 100 and 101.

  Thereafter, the first central robot CR1 takes out the heat-treated substrate W from the antireflection film heat treatment units 100 and 101, and carries the substrate W into the antireflection film application processing unit 50. In the antireflection film coating processing unit 50, an antireflection film is applied and formed on the substrate W by the coating unit BARC in order to reduce low standing waves and halation that occur during exposure.

  Next, the first central robot CR1 takes out the coated substrate W from the antireflection film coating processing unit 50 and carries the substrate W into the antireflection film heat treatment units 100 and 101. Thereafter, the first central robot CR1 takes out the heat-treated substrate W from the antireflection film heat treatment units 100 and 101, and places the substrate W on the substrate platform PASS3.

  The substrate W placed on the substrate platform PASS3 is received by the second central robot CR2 of the resist film processing block 11. The second central robot CR2 carries the substrate W into the resist film heat treatment units 110 and 111.

  Thereafter, the second central robot CR2 takes out the heat-treated substrate W from the resist film heat treatment units 110 and 111, and carries the substrate W into the resist film coating treatment unit 60. In the resist film application processing unit 60, a resist film is applied and formed on the substrate W on which the antireflection film is applied and formed by the application unit RES.

  Next, the second central robot CR2 takes out the coated substrate W from the resist film coating processing unit 60, and carries the substrate W into the resist film heat treatment units 110 and 111. Thereafter, the second central robot CR2 takes out the heat-treated substrate W from the resist film heat treatment units 110 and 111, and places the substrate W on the substrate platform PASS5.

  The substrate W placed on the substrate platform PASS5 is received by the third central robot CR3 of the development processing block 12. The third central robot CR3 places the substrate W on the substrate platform PASS7.

  The substrate W placed on the substrate platform PASS7 is received by the fourth central robot CR4 of the resist cover film processing block 13. The fourth central robot CR4 carries the substrate W into the resist cover film coating processing unit 80. In this resist cover film coating processing section 80, a resist cover film is applied and formed on the substrate W on which the resist film has been applied and formed by the coating unit COV.

  As will be described later, in the resist cover film processing block 13, the operation of each component is detected by a plurality of cameras and sensors. Further, based on the detection result, whether or not the resist cover film is normally formed on the substrate W by the slave controller (control unit) 400 (see FIG. 5 described later) of the resist cover film coating processing unit 80. Is determined. Hereinafter, the determination process performed by the slave controller 400 is referred to as a resist cover film determination process.

  In the substrate processing apparatus 500 according to the present embodiment, the substrate W determined to have a resist cover film formed normally by the resist cover film determination process, and the substrate W determined not to be formed normally On the other hand, different processes are performed in the steps after the coating process of the resist cover film. Hereinafter, the substrate W determined that the resist cover film is normally formed by the resist cover film determination processing is referred to as a normal substrate, and the substrate W determined that the resist cover film is not normally formed is referred to as a defective substrate. Call.

  First, the operation of the resist cover film removal block 14 to the indexer block 9 with respect to a normal substrate will be described. The operation of the resist cover film removal block 14 to the indexer block 9 for a defective substrate will be described later.

  The substrate W placed on the substrate platform PASS11 is received by the sixth central robot CR6 of the interface block 15, and predetermined processing is performed in the interface block 15 and the exposure device 16, as will be described later. After predetermined processing is performed on the substrate W in the interface block 15 and the exposure apparatus 16, the substrate W is carried into the post-exposure bake heat treatment unit 141 of the resist cover film removal block 14 by the sixth central robot CR6. .

  In the post-exposure baking heat treatment unit 141, post-exposure baking (PEB) is performed on the substrate W. Thereafter, the sixth central robot CR6 takes out the substrate W from the post-exposure bake heat treatment unit 141 and places the substrate W on the substrate platform PASS12.

  In this embodiment, post-exposure bake heat treatment unit 141 performs post-exposure bake, but post-exposure bake heat treatment unit 140 may perform post-exposure bake.

  The substrate W placed on the substrate platform PASS12 is received by the fifth central robot CR5 of the resist cover film removal block 14. The fifth central robot CR5 carries the substrate W into the resist cover film removal processing unit 90. In the resist cover film removal processing unit 90, the resist cover film is removed.

  Next, the fifth central robot CR5 takes out the processed substrate W from the resist cover film removal processing unit 90 and places the substrate W on the substrate platform PASS10.

  The substrate W placed on the substrate platform PASS10 is placed on the substrate platform PASS8 by the fourth central robot CR4 of the resist cover film processing block 13.

  The substrate W placed on the substrate platform PASS8 is received by the third central robot CR3 of the development processing block 12. The third central robot CR3 carries the substrate W into the development processing unit 70. In the development processing unit 70, development processing is performed on the exposed substrate W.

  Next, the third central robot CR3 takes out the development-processed substrate W from the development processing unit 70, and carries the substrate W into the development heat treatment units 120 and 121. Thereafter, the third central robot CR3 takes out the substrate W after the heat treatment from the development heat treatment units 120 and 121, and places the substrate W on the substrate platform PASS6.

  The substrate W placed on the substrate platform PASS6 is placed on the substrate platform PASS4 by the second central robot CR2 of the resist film processing block 11. The substrate W placed on the substrate platform PASS4 is placed on the substrate platform PASS2 by the first central robot CR1 of the anti-reflection film processing block 10.

  The substrate W placed on the substrate platform PASS 2 is stored in the carrier C by the indexer robot IR of the indexer block 9. Thereby, each process of the board | substrate W in the substrate processing apparatus 500 is complete | finished.

  Next, the operation of the resist cover film removal block 14 to the indexer block 9 for defective substrates will be described. Here, differences from the operations of the resist cover film removal block 14 to the indexer block 9 for normal substrates will be described.

  After predetermined processing is performed on the substrate W in the interface block 15 and the exposure apparatus 16, post-exposure baking is performed on the normal substrate in the post-exposure baking heat treatment units 140 and 141. On the other hand, the post-exposure baking is not performed on the defective substrate, and the defective substrate stands by for a predetermined time in the post-exposure bake heat treatment units 140 and 141. The waiting time is set to be equal to the time required for post-exposure baking. Thereafter, the defective substrate is taken out from the post-exposure bake heat treatment sections 140 and 141 by the sixth central robot CR6.

  In addition, the resist cover film removal processing unit 90 does not perform the resist cover film removal process on the defective substrate, and the defective substrate waits for a predetermined time in the resist cover film removal processing unit 90. The standby time is set to be equal to the time required for the resist cover film removal process.

  Further, the development processing unit 70 does not perform the development process on the defective substrate, and the defective substrate waits for a predetermined time in the development processing unit 70. The standby time is set to be equal to the time required for development processing.

  Further, when each substrate is returned to the indexer block 9 after each processing is completed in the substrate processing apparatus 500, a warning process for the operator is performed. The warning process is performed by, for example, a warning buzzer or a warning lamp. In this case, the operator recognizes that a defective substrate has occurred in the substrate processing apparatus 500 and takes measures such as collecting the defective substrate.

  In addition, when the substrate W is returned to the indexer block 9, the normal substrate and the defective substrate are automatically distributed to the predetermined carrier mounting table 40 based on the result of the resist cover film determination process, The defective substrate may be collected.

(2-2) Operation of Interface Block Next, the operation of the interface block 15 will be described in detail.

  In the interface block 15, different processing is performed on the normal substrate and the defective substrate, respectively.

  First, the operation of the interface block 15 with respect to a normal substrate will be described.

  The substrate W carried into the indexer block 9 is subjected to a predetermined process and then placed on the substrate platform PASS11 of the resist cover film removal block 14 (FIG. 1).

  The substrate W placed on the substrate platform PASS11 is received by the sixth central robot CR6 of the interface block 15. The sixth central robot CR6 carries the substrate W into the edge exposure unit EEW (FIG. 4). In the edge exposure unit EEW, the peripheral portion of the substrate W is subjected to exposure processing.

  Next, the sixth central robot CR6 takes out the edge-exposed substrate W from the edge exposure unit EEW and carries the substrate W into one of the first cleaning / drying processing units SD1. In the first cleaning / drying processing unit SD1, the cleaning and drying processing of the substrate W before the exposure processing is performed as described above.

  Here, the time of the exposure process by the exposure apparatus 16 is usually longer than the other process steps and the transport step. As a result, the exposure apparatus 16 often cannot accept a subsequent substrate W. In this case, the substrate W is temporarily stored in the sending buffer unit SBF (FIG. 4). In the present embodiment, the sixth central robot CR6 takes out the substrate W that has been cleaned and dried from the first cleaning / drying processing unit SD1, and transports the substrate W to the sending buffer unit SBF.

  Next, the sixth central robot CR6 takes out the substrate W stored and stored in the sending buffer unit SBF and carries the substrate W into the placement / cooling unit P-CP. The substrate W carried into the placement / cooling unit P-CP is maintained at the same temperature (for example, 23 ° C.) as that in the exposure apparatus 16.

  If the exposure apparatus 16 has a sufficient processing speed, the substrate W is not stored and stored in the sending buffer unit SBF, and the substrate is transferred from the first cleaning / drying processing unit SD1 to the placement / cooling unit P-CP. W may be conveyed.

  Subsequently, the substrate W maintained at the predetermined temperature by the placement / cooling unit P-CP is received by the upper hand H1 (FIG. 4) of the interface transport mechanism IFR, and the substrate carry-in section 16a in the exposure apparatus 16 is received. (FIG. 1).

  The substrate W that has been subjected to the exposure processing in the exposure device 16 is unloaded from the substrate unloading portion 16b (FIG. 1) by the lower hand H2 (FIG. 4) of the interface transport mechanism IFR. The interface transport mechanism IFR carries the substrate W into one of the second cleaning / drying processing units SD2 by the hand H2. In the second cleaning / drying processing unit SD2, the substrate W after the exposure processing is cleaned and dried as described above.

  The substrate W that has been subjected to the cleaning and drying processing in the second cleaning / drying processing unit SD2 is taken out by the hand H1 (FIG. 4) of the interface transport mechanism IFR. The interface transport mechanism IFR places the substrate W on the substrate platform PASS13 with the hand H1.

  The substrate W placed on the substrate platform PASS13 is received by the sixth central robot CR6. The sixth central robot CR6 transports the substrate W to the post-exposure bake heat treatment unit 141 of the resist cover film removal block 14 (FIG. 1).

  When the resist cover film removal block 14 temporarily cannot accept the substrate W due to a failure of the removal unit REM (FIG. 2), the substrate W after the exposure processing is temporarily stored in the return buffer unit RBF. can do.

  Next, the operation of the interface block 15 for a defective substrate will be described. Here, differences from the operation of the interface block 15 with respect to a normal substrate will be described.

  The substrate W received by the sixth central robot CR6 from the substrate platform PASS11 of the resist cover film removal block 14 (FIG. 1) is not carried into the edge exposure unit EEW, but is transferred to the sending buffer unit SBF (FIG. 4). It is brought in. In the sending buffer unit SBF, the substrate W waits for a predetermined time.

  After a predetermined time has elapsed, the substrate W is taken out from the sending buffer unit SBF by the sixth central robot CR6. Thereafter, the sixth central robot CR6 transports the substrate W to the post-exposure bake heat treatment unit 141 of the resist cover film removal block 14 (FIG. 1).

  As described above, the defective board carried into the interface block 15 waits at the sending buffer unit SBF and is carried out from the interface block 15 as it is. That is, for a defective substrate, edge exposure processing in the edge exposure unit EEW, cleaning / drying processing in the first cleaning / drying processing unit SD1, temperature control processing in the placement / cooling unit P-CP, in the exposure apparatus 16 The exposure process and the cleaning / drying process in the second cleaning / drying process unit SD2 are not performed.

  The standby time of the defective substrate in the sending buffer unit SBF is set to be equal to the processing time of the normal substrate in the interface block 15 and the exposure apparatus 16. That is, the residence time of the defective substrate in the interface block 15 and the residence time of the normal substrate in the interface block 15 and the exposure apparatus 16 are set to be equal.

(3) Resist Cover Film Determination Process Next, details of the resist cover film determination process in the resist cover film processing block 13 will be described.

(3-1) Configuration First, the configuration of the coating unit COV and its peripheral part will be described.

  FIG. 5 is a diagram for explaining the configuration of the coating unit COV and its peripheral part. As shown in FIG. 5, the coating unit COV includes a spin chuck 81 that holds the substrate W horizontally and rotates the substrate W around a vertical rotation axis that passes through the center of the substrate W.

  The spin chuck 81 is fixed to the upper end of the rotation shaft 425 rotated by the chuck rotation drive mechanism 436. The spin chuck 81 is formed with an intake path (not shown). By exhausting the intake path while the substrate W is placed on the spin chuck 81, the back surface of the substrate W is placed on the spin chuck 81. The substrate W can be held in a horizontal posture. Instead of the adsorption spin chuck 81, a mechanical spin chuck that holds the end surface of the substrate W may be used.

  An anti-scattering cup 440 is provided so as to surround the periphery of the substrate W held by the spin chuck 81. An opening 441 is provided on the upper surface side of the anti-scattering cup 440, and a drain port 442 and a plurality of exhaust ports 443 are provided below the anti-scattering cup 440. The exhaust port 443 is connected to an exhaust facility in the factory. On the inner surface of the anti-scattering cup 440, an inclined surface 440a that is inclined outward and downward is formed.

  The anti-scattering cup 440 moves up and down by an elevating drive mechanism (not shown). When the fourth central robot CR4 (FIG. 1) places the substrate W on the spin chuck 81 or takes out the substrate W on the spin chuck 81, the height of the upper end of the anti-scattering cup 440 is spin. The anti-scattering cup 440 moves so as to be lower than the height of the substrate W on the chuck 81. When the coating liquid is supplied to the substrate W on the spin chuck 81, the scattering prevention cup 440 moves to a position where the inclined surface 440a faces the outer peripheral end surface of the substrate W (hereinafter referred to as a substrate processing position).

  Further, below the substrate W on the spin chuck 81, a back rinse nozzle 445 that discharges a rinse liquid for cleaning the back surface of the substrate W is provided. As the rinsing liquid, for example, pure water, carbonated water, hydrogen water, electrolytic ion water, HFE (hydrofluoroether), a cleaning solvent, or the like is used.

  Above the spin chuck 81, a supply nozzle 82 that discharges a resist cover film coating solution onto the substrate W can move up and down and can move between a position above the substrate W and a standby position outside the substrate W. Is provided.

  A liquid discharge sensor 444 is attached to the tip of the supply nozzle 82. The liquid ejection sensor 444 includes a light projecting unit 444a that irradiates light in the infrared wavelength region, and a light receiver 444b that incorporates a light receiving element having high light receiving sensitivity in the infrared wavelength region. The light projecting unit 444a and the light receiving unit 444b are arranged so as to face each other across a slightly vertically lower region of the tip of the supply nozzle 82.

  During a period in which the coating liquid is normally discharged from the supply nozzle 82, that is, a period in which the coating liquid is discharged vertically downward from the supply nozzle 82, light from the light projecting unit 444a is blocked by the coating liquid. . Therefore, the light receiving unit 444b does not receive the light from the light projecting unit 444a.

  On the other hand, the light from the light projecting unit 444a is blocked by the coating liquid during the period when the ejection of the coating liquid is stopped or during the period when the coating liquid is not normally ejected due to clogging of the supply nozzle 82 or the like. Absent. Therefore, the light receiving unit 444b receives light from the light projecting unit 444a. The liquid discharge sensor 444 gives a discharge signal DI to the slave controller 400.

  When the light receiving unit 444b receives light from the light projecting unit 444a, the ejection signal DI given from the liquid ejection sensor 444 to the slave controller 400 is in a non-detection state (for example, high level). When the light receiving unit 444b does not receive the light from the light projecting unit 444a, the ejection signal DI given from the liquid ejection sensor 444 to the slave controller 400 is in a detection state (for example, low level).

  A coating liquid supply pipe 445 is connected to the supply nozzle 82. The coating liquid supply pipe 445 extends to the storage tank 449 in which the coating liquid for the resist cover film is stored via the flow meter 451, suck back valve 446, filter F, supply pump 447 and check valve 448. The flow meter 451, the suck back valve 446, the filter F, the supply pump 447, the check valve 448 and the storage tank 449 are accommodated in the accommodating portion 13A shown in FIG.

  The flow meter 451 measures the flow rate of the coating liquid supplied to the supply nozzle 82 through the coating liquid supply pipe 445 and gives the measurement result to the slave controller 400 as a flow rate signal FI.

  The suck back valve 446 is connected to a pressurized air source provided outside the substrate processing apparatus 500. By supplying pressurized air to the suck back valve 446 from the pressurized air source, the coating liquid remaining at the tip of the supply nozzle 82 is slightly pulled back to the upstream side. This prevents the coating liquid from dropping from the supply nozzle 82 except when the substrate W is processed.

  The filter F removes impurities mixed in the coating liquid. Thereby, a clean coating solution is supplied to the substrate W.

  The supply pump 447 includes a motor 447a. By driving the motor 447a, the coating liquid in the storage tank 449 is supplied to the supply nozzle 82 through the coating liquid supply pipe 445. A step-out sensor 447b is attached to the motor 447a. The step-out sensor 447b detects the step-out of the motor 447a and gives a step-out signal SO to the slave controller 400.

  A pressure gauge 447c is attached to a connection portion between the supply pump 447 and the coating liquid supply pipe 445. The pressure gauge 447c measures the supply pressure of the supply pump 447 (hereinafter referred to as pump pressure), and gives the measurement result to the slave controller 400 as a pressure signal PI.

  The check valve 448 prevents the coating liquid from flowing back from the supply pump 447 to the storage tank 449.

  Further, above the spin chuck 81, a CCD camera 450 is installed so as to photograph the central portion of the substrate W on the spin chuck 81. In FIG. 5, a part of the supply nozzle 82 and a part of the liquid discharge sensor 444 are located between the CCD camera 450 and the substrate W. The liquid discharge sensor 444 is arranged so that the central portion of the substrate W can be photographed without becoming an obstacle.

  When the coating liquid is discharged from the supply nozzle 82 onto the substrate W, the coating state of the coating liquid on the substrate W is continuously photographed as a still image by the CCD camera 450.

  The image data ID of the still image captured by the CCD camera 450 is given to the slave controller 400.

  Further, a film thickness sensor 460 is provided so as to be linearly movable between the central portion of the substrate W on the spin chuck 81 and the peripheral portion of the substrate W. The film thickness sensor 460 continuously measures the film thickness on the substrate W while moving between the central part and the peripheral part of the substrate W, and the measurement result is transmitted to the slave controller 400 as a film thickness signal CT. give.

  Although one coating unit COV and one supply system have been described in FIG. 5, actually, as shown in FIG. 2, the resist cover film processing block 13 is provided with three coating units COV. The storage unit 13A is provided with three supply systems corresponding to the three coating units COV. Each of the coating unit COV and the supply system is provided with a plurality of sensors and cameras shown in FIG.

(3-2) Operation and Resist Cover Film Determination Process Next, the operation of the coating unit COV will be described with reference to FIG.

  First, the substrate W is placed on the spin chuck 81 by the fourth central robot CR4 (FIG. 1), and the substrate W is held by the spin chuck 81. Thereafter, the supply nozzle 82 moves directly above the center of the substrate W, and the scattering prevention cup 440 moves to the above-described substrate processing position.

  Subsequently, the rotation shaft 425 is rotated by the chuck rotation driving mechanism 436, and the substrate W held by the spin chuck 81 is rotated accordingly.

  Next, the coating liquid is discharged from the supply nozzle 82 toward the center of the substrate W. The coating liquid discharged onto the substrate W spreads from the central portion of the substrate W to the peripheral portion due to the centrifugal force accompanying the rotation of the substrate W.

  After a predetermined time has elapsed, the discharge of the coating liquid is stopped. Subsequently, a rinse liquid is discharged from the back rinse nozzle 445 toward the back surface of the substrate W. Thereby, the coating liquid adhering to the back surface of the substrate W is washed away.

  Next, the discharge of the rinsing liquid is stopped, the rotational speed of the rotating shaft 425 is increased, and the rinsing liquid attached to the back surface of the substrate W is shaken off. Thereby, the substrate W is dried.

  Thereafter, the rotation of the rotation shaft 425 is stopped, and the rotation of the substrate W is stopped. Then, the substrate W is unloaded from the coating unit COV by the fourth center robot CR4 (FIG. 1). Thereby, a series of operations in the coating unit COV is completed.

  In the present embodiment, in parallel with the above operation, the slave controller 400 performs a determination process (resist cover film determination process) as to whether or not the resist cover film is normally formed on the substrate W.

  Here, whether the resist cover film is formed correctly will be described. 6A and 6B are a top view and a side view of the substrate W when the resist cover film is normally formed. FIGS. 6C and 6D are a top view and a side view of the substrate W when the resist cover film is not normally formed. In FIG. 6, only the substrate W and the resist cover film RCV are shown, but actually, the antireflection film and the resist film are formed between the substrate W and the resist cover film RCV.

  As shown in FIGS. 6A and 6B, when the resist cover film RCV is uniformly formed with a uniform thickness on one surface of the substrate W, the resist cover film RCV is normally formed. It can be said that.

  On the other hand, as shown in FIGS. 6C and 6D, the surface of the resist cover film RCV is not uniform, or the resist cover film RCV is formed on a part of the peripheral edge of the substrate W. If not, it cannot be said that the resist cover film RCV is normally formed. When the substrate W is transported to the exposure apparatus 16 in such a state, the liquid supplied onto the substrate W may flow out of the substrate W during the exposure process by the liquid immersion method.

  In this case, the electrical system of the exposure apparatus 16 is damaged by the liquid that has flowed out, causing malfunction of the exposure apparatus 16, or the portion of the substrate W that is not covered with the liquid is subjected to an exposure process so that the substrate is exposed. There is a risk of W exposure failure.

  In addition, the liquid that flows out of the substrate W contains contaminants and the like, which may cause contamination of the substrate W and cause processing defects.

  Therefore, in the present embodiment, the substrate W determined to be a defective substrate by the resist cover film determination process is not transferred from the interface block 15 to the exposure apparatus 16 as described above. Thereby, the malfunction of the exposure apparatus 16 and the processing defect of the substrate W are prevented.

  Next, details of the resist cover film determination process by the slave controller 400 will be described.

  FIG. 7 is a flowchart illustrating an example of resist cover film determination processing by the slave controller 400. As shown in FIG. 7, first, during the period when the coating liquid is being discharged from the supply nozzle 82 to the substrate W, the slave controller 400 determines the motor of the supply pump 447 based on the step-out signal SO provided from the step-out sensor 447b. It is determined whether or not the step out of 447a has occurred (step S1).

  When the step-out of the motor 447a of the supply pump 447 has occurred, the slave controller 400 determines that the substrate W being processed in the coating unit COV is a defective substrate (step S7). When the step-out of the motor 447a of the supply pump 447 has not occurred, the slave controller 400 subsequently performs the determination in step S2.

  In step S2, the slave controller 400 determines whether or not the pump pressure of the supply pump 447 is within a predetermined range set in advance based on the pressure signal PI given from the pressure gauge 447c (step S2). ).

  When the pump pressure of the supply pump 447 is not within the range of the predetermined value set in advance, the slave controller 400 determines that the substrate W being processed in the coating unit COV is a defective substrate (step S7). When the pump pressure of the supply pump 447 is within a preset specified value range, the slave controller 400 subsequently performs the determination in step S3.

  In step S3, the slave controller 400 determines that the flow rate of the coating solution supplied to the supply nozzle 82 through the coating solution supply pipe 445 is within a predetermined range based on the flow rate signal FI given from the flow meter 451. It is determined whether or not (step S3).

  If the flow rate of the coating liquid is not within the range of the preset specified value, the slave controller 400 determines that the substrate W being processed in the coating unit COV is a defective substrate (step S7). When the flow rate of the coating liquid is within a predetermined range set in advance, the slave controller 400 subsequently performs the determination in step S4.

  In step S4, the slave controller 400 determines whether or not the application state of the application liquid on the substrate W is normal based on the image data ID given from the CCD camera 450 (step S4). Specifically, for example, image data in a normal application state is stored in advance in the slave controller 400, and an approximation rate between the image data and the image data ID given from the CCD camera 450 is calculated. If the calculated approximation rate is equal to or greater than the threshold value, the slave controller 400 determines that the application state of the coating liquid is normal. If the approximation rate is lower than the threshold value, the slave controller 400 indicates that the application state is not normal. judge.

  Note that the normal application state refers to a case where the coating liquid spreads uniformly from the center of the substrate W toward the peripheral edge. That is, when the coating liquid is ejected at a position shifted from the center of the substrate W, or when the coating liquid spreads in a biased direction on the substrate W, the image data ID given from the CCD camera 450 and the image data ID are previously stored. The approximation rate with the image data stored in the slave controller 400 is lowered. Therefore, in that case, it is determined that the application state is not normal.

  If the application state of the application liquid on the substrate W is not normal in step S4, the slave controller 400 determines that the substrate W being processed by the application unit COV is a defective substrate (step S7). When the application state of the application liquid on the substrate W is normal, the slave controller 400 subsequently performs the determination in step S5.

  In step S5, the slave controller 400 determines whether or not the coating liquid is normally discharged from the supply nozzle 82 based on the state of the discharge signal DI given from the liquid discharge sensor 444 (step S5).

  If the coating liquid is not normally discharged, the slave controller 400 determines that the substrate W being processed by the coating unit COV is a defective substrate (step S7). When the coating liquid is normally discharged, the slave controller 400 subsequently performs the determination in step S6.

  In step S6, the film thickness on the substrate W is measured by the film thickness sensor 460 after the substrate W is dried and before the rotation of the substrate W is stopped. Here, the slave controller 400 determines whether or not the film thickness on the substrate W is within the range of the preset specified value based on the film thickness signal CT given from the film thickness sensor 460 (step S6).

  When the film thickness on the substrate W is not within the range of the predetermined value set in advance, the slave controller 400 determines that the substrate being processed by the coating unit COV is a defective substrate (step S7). When the film thickness on the substrate W is within a predetermined value range set in advance, the slave controller 400 determines that the substrate W being processed by the coating unit COV is a normal substrate (step S8).

  In this way, the slave controller 400 determines whether or not the resist cover film is normally formed on the substrate W being processed in the coating unit COV.

  The result of the resist cover film determination process by the slave controller 400 is given to the main controller 30. The main controller 30 controls each component of the substrate processing apparatus 500 based on the determination result given from the slave controller 400, and performs different processing on the normal substrate and the defective substrate as described above.

  In the present embodiment, if at least one of the determination conditions from step S1 to step S6 is not satisfied, it is determined that the substrate W being processed is a defective substrate. Thus, the substrate W being processed may be determined.

  For example, the substrate W being processed may be determined to be a defective substrate when a predetermined number or more of the determination conditions from step S1 to step S6 are not satisfied.

  In addition, a level corresponding to the importance of the determination is set in advance for each determination of step S1 to step S6, and the substrate W being processed is a normal substrate based on an addition value of the determination level that does not satisfy the condition. It may be determined whether there is a defective substrate. For example, level 2 is set for the determinations in steps S1 to S3, and level 1 is set for the determinations in steps S4 to S6. The threshold is set to 4. As a result of the determination in steps S1 to S6, if the conditions in steps S1, S2, and S5 are not satisfied, the added value of the determination level that does not satisfy the conditions is 5. In this case, the slave controller 400 determines that the substrate W being processed is a defective substrate.

  Further, in addition to the determination from step S1 to step S6 or instead of the determination from step S1 to step S6, for example, whether or not the concentration of the coating liquid is within a specified value range or whether the substrate W is eccentric. You may determine whether it exists. In this case, a concentration sensor for detecting the concentration of the coating liquid and an eccentric sensor for detecting the eccentricity of the substrate W are provided. Further, at least one of these determinations may be selected to determine whether the substrate W being processed is a normal substrate or a defective substrate.

  Further, in the present embodiment, in the coating unit COV, the supply of the coating liquid to the substrate W is started while the substrate W is rotated, and the coating liquid is applied to the substrate W while the substrate W is rotated. Although the supply is finished, the supply of the coating liquid to the substrate W may be completed without rotating the substrate W, or the supply of the coating liquid to the substrate W is started with the substrate W stopped, and the substrate W The supply of the coating liquid to the substrate W may be terminated in a state in which is rotated.

(4) Cleaning / Drying Processing Unit Next, the first and second cleaning / drying processing units SD1, SD2 will be described in detail with reference to the drawings. As described above, in the cleaning / drying processing units SD1 and SD2, processing is performed only on normal substrates. The first and second cleaning / drying processing units SD1 and SD2 may have the same configuration.

(4-1) Configuration FIG. 8 is a diagram for explaining the configuration of the first and second cleaning / drying processing units SD1, SD2. As shown in FIG. 8, the first and second cleaning / drying processing units SD1 and SD2 hold the substrate W horizontally and rotate the substrate W around a vertical rotation axis passing through the center of the substrate W. A spin chuck 621 is provided.

  The spin chuck 621 is fixed to the upper end of the rotation shaft 625 rotated by the chuck rotation drive mechanism 636. The spin chuck 621 is formed with an intake path (not shown), and the substrate W is placed on the spin chuck 621 and the inside of the intake path is evacuated so that the back surface of the substrate W is placed on the spin chuck 621. Thus, the substrate W can be held in a horizontal posture.

  A first rotation motor 660 is provided outside the spin chuck 621. A first rotation shaft 661 is connected to the first rotation motor 660. A first arm 662 is connected to the first rotation shaft 661 so as to extend in the horizontal direction, and a cleaning nozzle 650 is provided at the tip of the first arm 662.

  The first rotation shaft 661 is rotated by the first rotation motor 660 and the first arm 662 is rotated, so that the cleaning nozzle 650 is moved above the substrate W held by the spin chuck 621.

  A cleaning treatment supply pipe 663 is provided so as to pass through the first rotation motor 660, the first rotation shaft 661, and the first arm 662. The cleaning processing supply pipe 663 is connected to the cleaning liquid supply source R1 and the rinsing liquid supply source R2 via the valves Va and Vb.

  By controlling the opening and closing of the valves Va and Vb, the processing liquid supplied to the cleaning processing supply pipe 663 can be selected and the supply amount can be adjusted. In the configuration of FIG. 8, the cleaning liquid can be supplied to the cleaning processing supply pipe 663 by opening the valve Va, and the rinsing liquid can be supplied to the cleaning processing supply pipe 663 by opening the valve Vb. it can.

  The cleaning liquid or the rinse liquid is supplied to the cleaning process nozzle 650 from the cleaning liquid supply source R1 or the rinse liquid supply source R2 through the cleaning process supply pipe 663. Thereby, the cleaning liquid or the rinsing liquid can be supplied to the surface of the substrate W. As the cleaning liquid, for example, pure water, a liquid obtained by dissolving a complex (ionized) in pure water, a fluorine-based chemical liquid, or the like is used. As the rinsing liquid, for example, pure water, carbonated water, hydrogen water, or electrolytic ion water HFE (hydrofluoroether) is used.

  A second rotation motor 671 is provided outside the spin chuck 621. A second rotation shaft 672 is connected to the second rotation motor 671. A second arm 673 is connected to the second rotating shaft 672 so as to extend in the horizontal direction, and a drying processing nozzle 670 is provided at the tip of the second arm 673.

  The second rotation shaft 672 is rotated by the second rotation motor 671, the second arm 673 is rotated, and the drying processing nozzle 670 moves above the substrate W held by the spin chuck 621. .

  A drying treatment supply pipe 674 is provided so as to pass through the inside of the second rotation motor 671, the second rotation shaft 672, and the second arm 673. The drying processing supply pipe 674 is connected to an inert gas supply source R3 via a valve Vc. By controlling the opening and closing of the valve Vc, the supply amount of the inert gas supplied to the drying treatment supply pipe 674 can be adjusted.

  The inert gas is supplied to the drying processing nozzle 670 from the inert gas supply source R3 through the drying processing supply pipe 674. Thereby, an inert gas can be supplied to the surface of the substrate W. As the inert gas, for example, nitrogen gas is used.

  When supplying the cleaning liquid or the rinsing liquid to the surface of the substrate W, the cleaning processing nozzle 650 is positioned above the substrate. When supplying the inert gas to the surface of the substrate W, the cleaning processing nozzle 650 is Retreated to a predetermined position.

  Further, when supplying the cleaning liquid or the rinsing liquid to the surface of the substrate W, the drying processing nozzle 670 is retracted to a predetermined position, and when supplying the inert gas to the surface of the substrate W, the drying processing nozzle 670 is located above the substrate W.

  The substrate W held on the spin chuck 621 is accommodated in the processing cup 623. A cylindrical partition wall 633 is provided inside the processing cup 623. A drainage space 631 for draining the processing liquid (cleaning liquid or rinsing liquid) used for processing the substrate W is formed so as to surround the periphery of the spin chuck 621. Further, a recovery liquid space 632 for recovering the processing liquid used for processing the substrate W is formed between the processing cup 623 and the partition wall 633 so as to surround the drainage space 631.

  The drainage space 631 is connected to a drainage pipe 634 for guiding the processing liquid to a drainage processing apparatus (not shown), and the recovery liquid space 632 is supplied with the processing liquid to the recovery processing apparatus (not shown). A collection pipe 635 for guiding is connected.

  A guard 624 for preventing the processing liquid from the substrate W from splashing outward is provided above the processing cup 623. The guard 624 has a rotationally symmetric shape with respect to the rotation shaft 625. A drainage guide groove 641 having a square cross section is formed in an annular shape on the inner surface of the upper end portion of the guard 624.

  In addition, a recovery liquid guide portion 642 is formed on the inner surface of the lower end portion of the guard 624. The recovery liquid guide portion 642 includes an inclined surface that is inclined outward and downward. A partition wall storage groove 643 for receiving the partition wall 633 of the processing cup 623 is formed near the upper end of the recovered liquid guide portion 642.

  The guard 624 is provided with a guard lifting / lowering drive mechanism (not shown) configured by a ball screw mechanism or the like. The guard lifting / lowering drive mechanism includes a guard 624, a recovery position where the recovery liquid guide portion 642 faces the outer peripheral end surface of the substrate W held by the spin chuck 621, and the substrate W where the drainage guide groove 641 is held by the spin chuck 621. The liquid is moved up and down with respect to the drainage position facing the outer peripheral end face. When the guard 624 is at the recovery position (the guard position shown in FIG. 8), the processing liquid splashed outward from the substrate W is guided to the recovery liquid space 632 by the recovery liquid guide 642 and recovered through the recovery pipe 635. Is done. On the other hand, when the guard 624 is at the drainage position, the processing liquid splashed outward from the substrate W is guided to the drainage space 631 by the drainage guide groove 641 and drained through the drainage pipe 634. With the above configuration, the processing liquid is drained and collected.

(4-2) Operation Next, processing operations of the first and second cleaning / drying processing units SD1 and SD2 having the above-described configuration will be described. The operations of the constituent elements of the first and second cleaning / drying processing units SD1 and SD2 described below are controlled by the main controller (control unit) 30 shown in FIG.

  First, when the substrate W is loaded, the guard 624 is lowered, and the sixth central robot CR 6 or the interface transport mechanism IFR in FIG. 1 places the substrate W on the spin chuck 621. The substrate W placed on the spin chuck 621 is sucked and held by the spin chuck 621.

  Next, the guard 624 moves to the above-described liquid discharge position, and the cleaning nozzle 650 moves above the center of the substrate W. Thereafter, the rotation shaft 625 rotates, and the substrate W held on the spin chuck 621 rotates with this rotation. Thereafter, the cleaning liquid is discharged from the cleaning nozzle 650 onto the upper surface of the substrate W. Thereby, the substrate W is cleaned.

  In the first cleaning / drying processing unit SD1, the components of the resist cover film on the substrate W are eluted in the cleaning liquid during the cleaning. In cleaning the substrate W, the cleaning liquid is supplied onto the substrate W while rotating the substrate W. In this case, the cleaning liquid on the substrate W always moves to the periphery of the substrate W due to centrifugal force and scatters. Therefore, it is possible to prevent the components of the resist cover film eluted in the cleaning liquid from remaining on the substrate W.

  The components of the resist cover film may be eluted by, for example, depositing pure water on the substrate W and holding it for a certain time. The supply of the cleaning liquid onto the substrate W may be performed by a soft spray method using a two-fluid nozzle.

  After a predetermined time has elapsed, the supply of the cleaning liquid is stopped, and the rinsing liquid is discharged from the cleaning processing nozzle 650. Thereby, the cleaning liquid on the substrate W is washed away.

  Further, after a predetermined time has elapsed, the rotational speed of the rotating shaft 625 decreases. As a result, the amount of the rinsing liquid shaken off by the rotation of the substrate W is reduced, and the liquid layer L of the rinsing liquid is formed on the entire surface of the substrate W as shown in FIG. Note that the rotation of the rotation shaft 625 may be stopped to form the liquid layer L over the entire surface of the substrate W.

  Next, the supply of the rinsing liquid is stopped, the cleaning processing nozzle 650 is retracted to a predetermined position, and the drying processing nozzle 670 is moved above the center of the substrate W. Thereafter, an inert gas is discharged from the drying processing nozzle 670. As a result, as shown in FIG. 9B, the rinse liquid at the center of the substrate W moves to the peripheral edge of the substrate W, and the liquid layer L exists only at the peripheral edge of the substrate W.

  Next, as the rotational speed of the rotating shaft 625 (see FIG. 8) increases, the drying processing nozzle 670 gradually moves from above the center of the substrate W to above the peripheral edge as shown in FIG. 9C. . As a result, a large centrifugal force acts on the liquid layer L on the substrate W, and an inert gas can be blown over the entire surface of the substrate W, so that the liquid layer L on the substrate W can be reliably removed. As a result, the substrate W can be reliably dried.

  Next, the supply of the inert gas is stopped, the drying processing nozzle 670 is retracted to a predetermined position, and the rotation of the rotating shaft 625 is stopped. Thereafter, the guard 624 is lowered, and the sixth central robot CR6 or the interface transport mechanism IFR in FIG. As a result, the processing operation in the first and second cleaning / drying processing units SD1 and SD2 is completed. Note that the position of the guard 624 during the cleaning and drying process is preferably changed as appropriate according to the necessity of collecting or draining the processing liquid.

  In the above embodiment, the cleaning liquid processing nozzle 650 is commonly used for supplying the cleaning liquid and the rinsing liquid so that both the cleaning liquid and the rinsing liquid can be supplied from the cleaning liquid processing nozzle 650. However, a configuration in which the cleaning liquid supply nozzle and the rinsing liquid supply nozzle are separately provided may be employed.

  Further, when supplying the rinsing liquid, pure water may be supplied from a back rinsing nozzle (not shown) to the back surface of the substrate W so that the rinsing liquid does not flow around the back surface of the substrate W.

  In addition, when pure water is used as a cleaning liquid for cleaning the substrate W, it is not necessary to supply a rinse liquid.

  In the above embodiment, the substrate W is dried by the spin drying method. However, the substrate W may be dried by other drying methods such as a reduced pressure drying method and an air knife drying method.

  In the above embodiment, the inert gas is supplied from the drying processing nozzle 670 in a state where the liquid layer L of the rinsing liquid is formed, but the liquid layer L of the rinsing liquid is not formed. Alternatively, when the rinsing liquid is not used, the substrate W is completely dried by immediately supplying an inert gas from the drying nozzle 670 after the substrate W is rotated and the liquid layer of the cleaning liquid is once shaken off. May be.

(5) Effects in the present embodiment (5-1) Effects of resist cover film determination processing In the present embodiment, when the resist cover film is formed on the substrate W in the resist cover film processing block 13, the slave The controller 400 performs a resist cover film determination process for determining whether or not the resist cover film is normally formed. Based on the result of the resist cover film determination process, a defective substrate on which the resist cover film is not normally formed is not transported to the exposure device 16. That is, only the normal substrate on which the resist cover film is normally formed is transferred to the exposure device 16.

  Thereby, in the exposure apparatus 16, since the exposure process is performed only on the substrate W on which the resist cover film is uniformly formed with a predetermined thickness, the liquid supplied onto the substrate W is transferred to the substrate W. It is prevented from being repelled on W or flowing out of the substrate.

  Therefore, damage to the electrical system and the like of the exposure device 16 is prevented, and exposure processing is prevented from being performed on the portion of the substrate W not covered with the liquid. As a result, the operation failure of the exposure device 16 and the exposure failure of the substrate W are prevented.

  In addition, the liquid flowing out of the substrate W is prevented from being contaminated by containing particles in the atmosphere, and processing defects of the substrate W are prevented.

  In the present embodiment, the residence time of the defective substrate in the interface block 15 is set to be equal to the residence time of the normal substrate in the interface block 15 and the exposure apparatus 16.

  Thereby, even when the normal substrate and the defective substrate are included in the plurality of substrates W to be processed continuously, the processing intervals of the plurality of substrates W are prevented from being disturbed before and after the processing in the interface block 15. . Thereby, only a normal substrate can be transferred to the exposure apparatus 16 while maintaining the throughput.

  Further, in the post-exposure baking heat treatment units 140 and 141, the resist cover film removal processing unit 90, and the development processing unit 70, the standby time of the defective substrate is set to be equal to the time required for each process. Thereby, even when processing a plurality of substrates W in which normal substrates and defective substrates are mixed, different processing can be performed on normal substrates and defective substrates while maintaining throughput.

(5-2) Effects of Each Process on Normal Substrate Hereinafter, effects of each process on a normal substrate will be described.

(5-2-a) Effects of Drying Substrate after Exposure Processing In the substrate processing apparatus 500 according to the present embodiment, the substrate after the exposure processing in the second cleaning / drying processing unit SD2 of the interface block 15. W is dried. This prevents the liquid adhering to the substrate W during the exposure process from falling into the substrate processing apparatus 500.

  In addition, by performing a drying process on the substrate W after the exposure process, it is possible to prevent dust and the like in the atmosphere from adhering to the substrate W after the exposure process, thereby preventing contamination of the substrate W.

  In addition, since it is possible to prevent the substrate W to which the liquid is attached from being transported through the substrate processing apparatus 500, the liquid attached to the substrate W during the exposure process affects the atmosphere in the substrate processing apparatus 500. Can be prevented. Thereby, temperature and humidity adjustment in the substrate processing apparatus 500 is facilitated.

  Further, since the liquid adhering to the substrate W during the exposure processing is prevented from adhering to the indexer robot IR and the first to sixth center robots CR1 to CR6, the liquid may adhere to the substrate W before the exposure processing. Is prevented. This prevents dust and the like in the atmosphere from adhering to the substrate W before the exposure process, so that contamination of the substrate W is prevented. As a result, it is possible to prevent the resolution performance from being deteriorated during the exposure process and to prevent contamination in the exposure apparatus 16.

  Further, while the substrate W is transported from the second cleaning / drying processing unit SD2 to the development processing unit 70, the resist component or the resist cover film component is eluted in the cleaning liquid and the rinsing liquid remaining on the substrate W. Can be reliably prevented. Thereby, deformation of the exposure pattern formed on the resist film can be prevented. As a result, it is possible to reliably prevent a reduction in line width accuracy during the development process.

  As a result, it is possible to prevent malfunctions such as abnormalities in the electrical system of the substrate processing apparatus 500 and to reliably prevent malfunctions of the substrate W.

  Further, in the second cleaning / drying processing unit SD2, the substrate W is dried by blowing an inert gas from the central portion to the peripheral portion while rotating the substrate W. In this case, the cleaning liquid and the rinsing liquid on the substrate W can be reliably removed, so that it is possible to reliably prevent dust and the like in the atmosphere from adhering to the cleaned substrate W. Thereby, the contamination of the substrate W can be surely prevented, and the occurrence of dry spots on the surface of the substrate W can be prevented.

(5-2b) Effect of the substrate cleaning process after the exposure process In the second cleaning / drying processing unit SD2, the substrate W is cleaned before the drying process. In this case, even if dust or the like in the atmosphere adheres to the substrate W to which the liquid has adhered during the exposure process, the adhered matter can be removed. Thereby, contamination of the substrate W can be prevented. As a result, it is possible to reliably prevent substrate processing defects.

(5-2c) Effect of Resist Cover Film Application Process Before the exposure process is performed on the substrate W in the exposure apparatus 16, the resist cover film is formed on the resist film in the resist cover film processing block 13. . In this case, even if the substrate W is in contact with the liquid in the exposure apparatus 16, the resist film is prevented from coming into contact with the liquid by the resist cover film, so that the resist components are prevented from eluting into the liquid.

(5-2d) Effect of Removal Process of Resist Cover Film Before the development process is performed on the substrate W in the development process block 12, the resist cover film removal process is performed in the resist cover film removal block 14. In this case, since the resist cover film is reliably removed before the development processing, the development processing can be performed reliably.

(5-2e) Effects of Cleaning and Drying of Substrate Before Exposure Processing Before exposure processing of the substrate W is performed in the exposure apparatus 16, the cleaning processing of the substrate W is performed in the first cleaning / drying processing unit SD1. Done. During this cleaning process, some of the components of the resist cover film on the substrate W are eluted into the cleaning solution or the rinsing solution and washed away. Therefore, even if the substrate W comes into contact with the liquid in the exposure apparatus 16, the components of the resist cover film on the substrate W are hardly eluted in the liquid. Further, dust and the like attached to the substrate W before the exposure process can be removed. As a result, contamination in the exposure apparatus 16 is prevented.

  In the first cleaning / drying processing unit SD1, the substrate W is subjected to a drying process after the substrate W is cleaned. As a result, the cleaning liquid or the rinse liquid adhering to the substrate W during the cleaning process is removed, so that the dust in the atmosphere or the like is prevented from adhering again to the substrate W after the cleaning process. As a result, contamination within the exposure apparatus 16 can be reliably prevented.

  Further, in the first cleaning / drying processing unit SD1, the substrate W is dried by blowing an inert gas from the central portion to the peripheral portion while rotating the substrate W. In this case, the cleaning liquid and the rinsing liquid on the substrate W can be reliably removed, so that it is possible to reliably prevent dust and the like in the atmosphere from adhering to the cleaned substrate W. Thereby, the contamination of the substrate W can be surely prevented, and the occurrence of dry spots on the surface of the substrate W can be prevented.

(5-2f) Effect of Interface Block In the interface block 15, the sixth central robot CR6 carries the substrate W into and out of the edge exposure unit EEW, and loads the substrate W into the first cleaning / drying processing unit SD1. Loading / unloading, loading / unloading of the substrate W into / from the sending buffer unit SBF, loading of the substrate into the placement / cooling unit P-CP, and unloading of the substrate W from the substrate platform PASS13 are performed. Unloading the substrate W from the placement / cooling unit P-CP, loading / unloading the substrate W to / from the exposure apparatus 16, loading / unloading the substrate W to / from the second cleaning / drying processing unit SD2, and to the substrate platform PASS13. The substrate W is carried in. As described above, since the substrate W is efficiently transferred by the sixth central robot CR6 and the interface transfer mechanism IFR, the throughput can be improved.

  In the interface block 15, the first cleaning / drying processing unit SD1 and the second cleaning / drying processing unit SD2 are provided in the vicinity of the side surfaces in the X direction. In this case, maintenance of the first and second cleaning / drying processing units SD1 and SD2 can be easily performed from the side surface of the substrate processing apparatus 500 without removing the interface block 15.

  Further, the first and second cleaning / drying processing units SD1 and SD2 can clean and dry the substrate W before and after the exposure processing in one processing block. Therefore, an increase in the footprint of the substrate processing apparatus 500 can be prevented.

(5-2g) Effects of Interface Transport Mechanism In the interface block 15, when the substrate W is transported from the placement / cooling unit P-CP to the exposure device 16, the substrate is transferred from the second cleaning / drying processing unit SD2 to the substrate W. When transporting the substrate W to the placement unit PASS13, the hand H1 of the interface transport mechanism IFR is used. When transporting the substrate from the exposure apparatus 16 to the second cleaning / drying processing unit SD2, the interface H A hand H2 of the transport mechanism IFR is used.

  That is, the hand H1 is used for transporting the substrate W to which no liquid is attached, and the hand H2 is used for transporting the substrate W to which the liquid is attached.

  In this case, since the liquid adhering to the substrate W during the exposure process is prevented from adhering to the hand H1, the liquid is prevented from adhering to the substrate W before the exposure process. Further, since the hand H2 is provided below the hand H1, even if the liquid falls from the hand H2 and the substrate W held by the hand H2, the liquid is prevented from adhering to the hand H1 and the substrate W held by the hand H2. Can do. Thereby, it is possible to reliably prevent the liquid from adhering to the substrate W before the exposure processing. As a result, contamination of the substrate W before the exposure process can be reliably prevented.

(5-2h) Effects of Placing the Placement / Cooling Unit P-CP In the interface block 15, the function of placing the substrate W before the exposure processing by the exposure device 16 and the temperature of the substrate W are exposed. By providing the mounting / cooling unit P-CP having a cooling function for adjusting to the temperature in the apparatus 16, the transport process can be reduced. In performing exposure processing by a liquid immersion method that requires strict temperature control of the substrate, it is important to reduce the number of transport steps.

  As a result, the throughput can be improved and the transport access position can be reduced, so that the reliability can be improved.

  In particular, the throughput can be further improved by providing two mounting / cooling units P-CP.

(6) Another Example of Cleaning / Drying Processing Unit In the cleaning / drying processing unit shown in FIG. 8, the cleaning processing nozzle 650 and the drying processing nozzle 670 are provided separately, but are shown in FIG. As described above, the cleaning processing nozzle 650 and the drying processing nozzle 670 may be provided integrally. In this case, since it is not necessary to move the cleaning nozzle 650 and the drying nozzle 670 separately during the cleaning process or the drying process of the substrate W, the driving mechanism can be simplified.

  Further, instead of the drying processing nozzle 670 shown in FIG. 8, a drying processing nozzle 770 as shown in FIG. 11 may be used.

  The drying processing nozzle 770 of FIG. 11 has branch pipes 771 and 772 that extend vertically downward and obliquely downward from the side surfaces. Gas discharge ports 770a, 770b, and 770c for discharging an inert gas are formed at the lower end of the drying processing nozzle 770 and the lower ends of the branch pipes 771 and 772.

  Inert gas is discharged vertically and obliquely downward from the discharge ports 770a, 770b, and 770c, respectively, as indicated by arrows in FIG. That is, in the drying processing nozzle 770, the inert gas is discharged so that the spraying range expands downward.

  Here, when the drying processing nozzle 770 is used, the first and second cleaning / drying processing units SD1 and SD2 perform the drying processing of the substrate W by the operation described below.

  FIG. 12 is a diagram for explaining a method for drying the substrate W when the drying processing nozzle 770 is used.

  First, after the liquid layer L is formed on the surface of the substrate W by the method described with reference to FIG. 9A, the drying processing nozzle 770 moves above the center of the substrate W as shown in FIG. To do.

  Thereafter, an inert gas is discharged from the drying processing nozzle 770. As a result, as shown in FIG. 12B, the rinse liquid at the center of the substrate W moves to the peripheral edge of the substrate W, and the liquid layer L exists only at the peripheral edge of the substrate W. At this time, the drying processing nozzle 770 is placed close to the surface of the substrate W so that the rinsing liquid present at the center of the substrate W can be moved reliably.

  Next, the rotational speed of the rotary shaft 625 (see FIG. 8) increases, and the drying processing nozzle 770 moves upward as shown in FIG. 12 (c). Thereby, a large centrifugal force acts on the liquid layer L on the substrate W, and the range in which the inert gas on the substrate W is sprayed is expanded. As a result, the liquid layer L on the substrate W can be reliably removed. The drying processing nozzle 770 moves up and down by moving the second rotating shaft 672 up and down by a rotating shaft lifting mechanism (not shown) provided on the second rotating shaft 672 in FIG. Can be moved.

  Further, instead of the drying processing nozzle 770, a drying processing nozzle 870 as shown in FIG. 13 may be used. The drying processing nozzle 870 in FIG. 13 has a discharge port 870a whose diameter gradually increases downward.

  From the discharge port 870a, an inert gas is discharged vertically and obliquely downward as indicated by arrows in FIG. That is, also in the drying processing nozzle 870, the inert gas is discharged so that the spraying range expands downward as in the drying processing nozzle 770 of FIG. Therefore, even when the drying processing nozzle 870 is used, the substrate W can be dried by the same method as that when the drying processing nozzle 770 is used.

  Further, instead of the cleaning / drying processing unit shown in FIG. 8, a cleaning / drying processing unit as shown in FIG. 14 may be used.

  The cleaning / drying processing unit shown in FIG. 14 is different from the cleaning / drying processing unit shown in FIG. 8 in the following points.

  In the cleaning / drying processing unit of FIG. 14, a disc-shaped blocking plate 682 having an opening at the center is provided above the spin chuck 621. A support shaft 689 is provided vertically downward from the vicinity of the tip of the arm 688, and a blocking plate 682 is attached to the lower end of the support shaft 689 so as to face the upper surface of the substrate W held by the spin chuck 621.

  A gas supply path 690 communicating with the opening of the blocking plate 682 is inserted into the support shaft 689. For example, nitrogen gas is supplied to the gas supply path 690.

  The arm 688 is connected to a shield plate lifting / lowering drive mechanism 697 and a shield plate rotation drive mechanism 698. The blocking plate lifting / lowering drive mechanism 697 moves the blocking plate 682 up and down between a position close to the upper surface of the substrate W held by the spin chuck 621 and a position away from the spin chuck 621.

  In the cleaning / drying processing unit of FIG. 14, during the drying process of the substrate W, the gap between the substrate W and the blocking plate 682 is placed with the blocking plate 682 in proximity to the substrate W as shown in FIG. 15. In contrast, an inert gas is supplied from a gas supply path 690. In this case, since the inert gas can be efficiently supplied from the central portion of the substrate W to the peripheral portion, the liquid layer L on the substrate W can be reliably removed.

(7) Example of cleaning / drying processing unit using two-fluid nozzle (7-1) Configuration and operation when two-fluid nozzle is used In the above embodiment, the first and second cleaning / drying processing units In SD1 and SD2, the case where the cleaning processing nozzle 650 and the drying processing nozzle 670 as shown in FIG. 8 are used has been described. Instead of one or both of the cleaning processing nozzle 650 and the drying processing nozzle 670, FIG. A two-fluid nozzle as shown in FIG. 16 may be used.

  FIG. 16 is a longitudinal sectional view showing an example of the internal structure of the two-fluid nozzle 950 used for the cleaning and drying process. From the two-fluid nozzle 950, gas, liquid, and mixed fluid of gas and liquid can be selectively discharged.

  The two-fluid nozzle 950 of the present embodiment is called an external mixing type. An external mixing type two-fluid nozzle 950 shown in FIG. 16 includes an inner main body 311 and an outer main body 312. The inner main body 311 is made of, for example, quartz, and the outer main body 312 is made of, for example, a fluororesin such as PTFE (polytetrafluoroethylene).

  A cylindrical liquid introduction portion 311 b is formed along the central axis of the inner main body portion 311. A cleaning processing supply pipe 663 shown in FIG. 8 is attached to the liquid introduction part 311b. As a result, the cleaning liquid or the rinsing liquid supplied from the cleaning processing supply pipe 663 is introduced into the liquid introducing portion 311b.

  A liquid discharge port 311 a communicating with the liquid introduction part 311 b is formed at the lower end of the internal main body part 311. The internal main body 311 is inserted into the external main body 312. Note that the upper ends of the inner main body 311 and the outer main body 312 are joined to each other, and the lower ends are not joined.

  A cylindrical gas passage portion 312 b is formed between the inner main body portion 311 and the outer main body portion 312. A gas discharge port 312a communicating with the gas passage 312b is formed at the lower end of the external main body 312. A drying processing supply pipe 674 of FIG. 8 is attached to the peripheral wall of the external main body 312 so as to communicate with the gas passage 312b. As a result, the inert gas supplied from the drying processing supply pipe 674 is introduced into the gas passage portion 312b.

  The gas passage portion 312b becomes smaller in diameter in the vicinity of the gas discharge port 312a as it goes downward. As a result, the flow rate of the inert gas is accelerated and discharged from the gas discharge port 312a.

  The cleaning liquid discharged from the liquid discharge port 311a and the inert gas discharged from the gas discharge port 312a are mixed outside near the lower end of the two-fluid nozzle 950, so that a mist-like mixed fluid containing fine droplets of the cleaning liquid is formed. Generated.

  FIG. 17 is a diagram for explaining a method for cleaning and drying the substrate W when the two-fluid nozzle 950 of FIG. 16 is used.

  First, as shown in FIG. 8, the substrate W is sucked and held by the spin chuck 621 and rotates with the rotation of the rotation shaft 625. In this case, the rotational speed of the rotating shaft 625 is about 500 rpm, for example.

  In this state, as shown in FIG. 17A, a mist-like mixed fluid composed of a cleaning liquid and an inert gas is discharged from the two-fluid nozzle 950 to the upper surface of the substrate W, and the two-fluid nozzle 950 It moves gradually from above the central part to above the peripheral part. As a result, the mixed fluid is sprayed from the two-fluid nozzle 950 onto the entire surface of the substrate W, and the substrate W is cleaned.

  Next, as shown in FIG. 17B, the supply of the mixed fluid is stopped, the rotation speed of the rotation shaft 625 is decreased, and the rinse liquid is discharged from the two-fluid nozzle 950 onto the substrate W. In this case, the rotational speed of the rotating shaft 625 is, for example, about 10 rpm. Thereby, the liquid layer L of the rinse liquid is formed on the entire surface of the substrate W. Note that the rotation of the rotation shaft 625 may be stopped to form the liquid layer L over the entire surface of the substrate W. In addition, when pure water is used as the cleaning liquid in the mixed fluid for cleaning the substrate W, the rinse liquid need not be supplied.

  After the liquid layer L is formed, the supply of the rinsing liquid is stopped. Next, as shown in FIG. 17C, an inert gas is discharged from the two-fluid nozzle 950 onto the substrate W. As a result, the cleaning liquid at the center of the substrate W moves to the peripheral edge of the substrate W, and the liquid layer L exists only at the peripheral edge of the substrate W.

  Thereafter, the rotation speed of the rotation shaft 625 increases. In this case, the rotational speed of the rotating shaft 625 is about 100 rpm, for example. Thereby, since a big centrifugal force acts on the liquid layer L on the substrate W, the liquid layer L on the substrate W can be removed. As a result, the substrate W is dried.

  When removing the liquid layer L on the substrate W, the two-fluid nozzle 950 may gradually move from the upper center of the substrate W to the upper peripheral edge. Thereby, since the inert gas can be sprayed on the entire surface of the substrate W, the liquid layer L on the substrate W can be reliably removed. As a result, the substrate W can be reliably dried.

(7-2) Effect of Using Two-Fluid Nozzle In the two-fluid nozzle shown in FIG. Even in some cases, the dirt adhered to the substrate W is stripped off by the fine droplets of the cleaning liquid. Thereby, the contamination on the surface of the substrate W can be surely removed. Even when the wettability of the film on the substrate W is low, the dirt on the surface of the substrate W is peeled off by the fine droplets of the cleaning liquid, so that the dirt on the surface of the substrate W can be surely removed.

  Therefore, in particular, when a two-fluid nozzle is used in the first cleaning / drying processing unit SD1, when the substrate W is heat-treated by the heating unit HP before the exposure processing, the resist film or the resist cover film Even when the solvent or the like is sublimated in the heating unit HP and the sublimated product is reattached to the substrate W, the attached matter can be surely removed in the first cleaning / drying processing unit SD1. Thereby, contamination in the exposure device 16 can be reliably prevented.

  Further, the cleaning power when cleaning the substrate W can be easily adjusted by adjusting the flow rate of the inert gas. Thereby, when the organic film (resist film or resist cover film) on the substrate W has a property of being easily damaged, the organic film on the substrate W can be prevented from being damaged by weakening the cleaning power. Further, when the dirt on the surface of the substrate W is strong, the dirt on the surface of the substrate W can be surely removed by increasing the cleaning power. Thus, by adjusting the cleaning power according to the nature of the organic film on the substrate W and the degree of contamination, the substrate W can be reliably cleaned while preventing the organic film on the substrate W from being damaged. .

  In the external mixing type two-fluid nozzle 950, the mixed fluid is generated by mixing the cleaning liquid and the inert gas outside the two-fluid nozzle 950. In the two-fluid nozzle 950, the inert gas and the cleaning liquid are divided into separate flow paths. Thereby, the cleaning liquid does not remain in the gas passage portion 312b, and the inert gas can be discharged from the two-fluid nozzle 950 alone. Further, by supplying the rinse liquid from the cleaning treatment supply pipe 663, the rinse liquid can be discharged independently from the two-fluid nozzle 950. Therefore, the mixed fluid, the inert gas, and the rinse liquid can be selectively discharged from the two-fluid nozzle 950.

  When the two-fluid nozzle 950 is used, it is not necessary to separately provide a nozzle for supplying a cleaning liquid or a rinsing liquid to the substrate W and a nozzle for supplying an inert gas to the substrate W. Accordingly, the substrate W can be reliably cleaned and dried with a simple structure.

  In the above description, the rinsing liquid is supplied to the substrate W by the two-fluid nozzle 950, but the rinsing liquid may be supplied to the substrate W using a separate nozzle.

  In the above description, the inert gas is supplied to the substrate W by the two-fluid nozzle 950. However, the inert gas may be supplied to the substrate W using a separate nozzle.

(B) Other Embodiments In the above embodiment, the post-exposure bake heat treatment sections 140 and 141, the resist cover film removal processing section 90, and the development processing section 70 each process a defective substrate. Although not performed, a process similar to that for a normal substrate may be performed on a defective substrate as necessary.

  In the above embodiment, the formation state of the resist cover film on the substrate W is detected in the coating unit COV, but the formation state of the resist cover film on the substrate W may be detected in another unit or a plurality of units. .

  For example, in the edge exposure unit EEW of the interface block 15, the film thickness on the substrate W may be measured by a film thickness sensor.

  The resist cover film processing block 13 may not be provided. In this case, at the time of the cleaning process in the first cleaning / drying processing unit SD1, some of the components of the resist film are eluted in the cleaning liquid. Thereby, even if the resist film comes into contact with the liquid in the exposure apparatus 16, the resist components are prevented from being eluted into the liquid. As a result, contamination in the exposure apparatus 16 can be prevented.

  If the resist cover film processing block 13 is not provided, the resist cover film removal block 14 may not be provided. Thereby, the footprint of the substrate processing apparatus 500 can be reduced. If the resist cover film processing block 13 and the resist cover film removal block 14 are not provided, post-exposure baking of the substrate W is performed in the development heat treatment section 121 of the development processing block 12.

  In addition, the first cleaning / drying processing unit SD1, the second cleaning / drying processing unit SD2, the coating units BARC, RES, COV, the development processing unit DEV, the removal unit REM, the heating unit HP, the cooling unit CP, and the mounting unit The number of cooling units P-CP may be changed as appropriate according to the processing speed of each processing block. For example, when two edge exposure units EEW are provided, the number of second cleaning / drying processing units SD2 may be two.

(C) Correspondence between each constituent element of claims and each part of the embodiment Hereinafter, an example of correspondence between each constituent element of the claims and each part of the embodiment will be described, but the present invention is limited to the following examples. Not.

  In the above embodiment, the anti-reflection film processing block 10, the resist film processing block 11, the development processing block 12, the resist cover film processing block 13 and the resist cover film removal block 14 correspond to the processing section, and the interface block. 15 corresponds to the transfer unit, the coating unit RES corresponds to the photosensitive film forming unit, the coating unit COV corresponds to the protective film forming unit, the slave controller 400, the liquid discharge sensor 444, the flow meter 451, the step-out sensor 447b, The pressure gauge 447c, the CCD camera 450, and the film thickness sensor 460 correspond to determination means.

  Further, the sending buffer unit SBF corresponds to the substrate storage unit, the sixth central robot CR6 and the interface transport mechanism IFR correspond to the transport unit, the first cleaning / drying processing unit SD1 corresponds to the cleaning unit, The cleaning / drying processing unit 2 corresponds to the drying processing unit, the supply nozzle 82 corresponds to the nozzle, the liquid discharge sensor 444 corresponds to the nozzle detector, the CCD camera 450 corresponds to the imaging device, and the film pressure sensor 460. Corresponds to the film thickness measuring device, the supply pump 447 corresponds to the pump, the pressure gauge 447c corresponds to the pump pressure measuring device, the step-out sensor 447 corresponds to the deenteration detector, and the coating liquid supply pipe 445 is the supply pipe. The flow meter 451 corresponds to a flow meter, and the slave controller 400 includes a discharge state determination unit, an image determination unit, a film thickness determination unit, a pump pressure determination unit, Determination unit and corresponding to the flow rate determining unit.

  The present invention can be used for processing various substrates.

1 is a plan view of a substrate processing apparatus according to a first embodiment of the present invention. It is the schematic side view which looked at the substrate processing apparatus of Drawing 1 from the + X direction. It is the schematic side view which looked at the substrate processing apparatus of Drawing 1 from the -X direction. It is the schematic side view which looked at the interface block from the + Y side. It is a figure for demonstrating the structure of a coating unit and its peripheral part. It is a figure for demonstrating the right or wrong of the formation state of a resist cover film. It is a flowchart which shows an example of the resist cover film | membrane determination process by a slave. It is a figure for demonstrating the structure of a washing | cleaning / drying processing unit. It is a figure for demonstrating operation | movement of a washing | cleaning / drying processing unit. It is a schematic diagram when the nozzle for washing processing and the nozzle for drying processing are provided integrally. It is a schematic diagram which shows the other example of the nozzle for a drying process. It is a figure for demonstrating the drying processing method of the board | substrate at the time of using the nozzle for drying processing of FIG. It is a schematic diagram which shows the other example of the nozzle for a drying process. It is a schematic diagram which shows the other example of a washing | cleaning / drying processing unit. It is a figure for demonstrating the drying processing method of the board | substrate at the time of using the washing | cleaning / drying processing unit of FIG. It is a longitudinal cross-sectional view which shows an example of the internal structure of the 2 fluid nozzle used for a washing | cleaning and a drying process. It is a figure for demonstrating the washing | cleaning and drying processing method of a board | substrate at the time of using the 2 fluid nozzle of FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 9 Indexer block 10 Antireflection film processing block 11 Resist film processing block 12 Development processing block 13 Resist cover film processing block 14 Resist cover film removal block 15 Interface block 16 Exposure apparatus 50 Antireflection film coating processing part 60 Resist film Coating processing unit 70 Development processing unit 80 Resist cover film coating processing unit 82 Supply nozzle 90 Resist cover film removal processing unit 100, 101 Antireflection film heat treatment unit 110, 111 Resist film heat treatment unit 120, 121 Development heat treatment Parts 130, 131 heat treatment part for resist cover film 140, 141 heat treatment part for post-exposure baking 400 slave controller 444 liquid discharge sensor 445 coating liquid supply pipe 447 supply pump 447a motor 447b step-out sensor 44 c Pressure gauge 450 CCD camera 451 Flow meter 460 Film thickness sensor 500 Substrate processing device 650 Cleaning processing nozzle 670, 770, 870 Drying processing nozzle EEW Edge exposure unit BARC, RES, COV coating unit DEV development processing unit REM removal unit SD1 First cleaning / drying processing unit SD2 Second cleaning / drying processing unit IFR interface transport mechanism P-CP mounting / cooling unit W substrate PASS1 to PASS13 substrate mounting unit

Claims (11)

A substrate processing apparatus disposed adjacent to an exposure apparatus that performs exposure processing on a substrate by a liquid immersion method,
A processing unit for processing the substrate;
A delivery unit for delivering a substrate between the processing unit and the exposure apparatus;
The processor is
A photosensitive film forming unit for forming a photosensitive film made of a photosensitive material on the surface of the substrate;
A protective film forming unit for forming a protective film for protecting the photosensitive film;
Determination means for determining whether or not the formation of the protective film in the protective film forming unit is normal,
The transfer unit conveys the substrate to the exposure apparatus when the determination unit determines that the protective film is formed normally, and the transfer unit transfers the substrate when the determination unit determines that the protective film is not formed normally. A substrate processing apparatus, wherein the substrate is put on standby without transporting the substrate to the apparatus. The staying time of the substrate in the transfer unit and the exposure apparatus when the determination unit determines that the formation of the protective film is normal and the determination unit determines that the formation of the protective film is not normal The substrate processing apparatus according to claim 1, wherein the staying time of the substrate at the transfer unit is set equal. The delivery unit is
A substrate storage unit for temporarily storing the substrate;
Transport means for transporting a substrate between the processing section, the substrate storage section and the exposure apparatus,
The transport unit transports the substrate to the exposure apparatus when the determination unit determines that the formation of the protective film is normal, and transfers the substrate when the determination unit determines that the formation of the protective film is not normal. The substrate processing apparatus according to claim 1, wherein the substrate processing unit is stored in the substrate storage unit. The delivery unit further includes a drying unit that dries the substrate after the exposure processing by the exposure apparatus,
The transport unit transports the substrate after the exposure processing by the exposure apparatus to the drying unit when the determination unit determines that the formation of the protective film is normal, and the substrate after drying by the drying unit is transported to the drying unit. 4. The substrate according to claim 3, wherein the substrate after being stored by the substrate storage unit is transferred to the processing unit when the determination unit determines that the formation of the protective film is not normal. Processing equipment. The delivery unit further includes a cleaning unit for cleaning the substrate before the exposure processing by the exposure apparatus,
The transport unit transports the substrate to the cleaning unit before the exposure processing by the exposure apparatus when the determination unit determines that the formation of the protective film is normal, and the substrate after cleaning by the cleaning unit is transferred to the cleaning unit. Transporting the substrate after exposure processing by the exposure device to the processing unit and transporting the substrate after storage by the substrate storage unit when the determination unit determines that the protective film is not properly formed The substrate processing apparatus according to claim 3, wherein the substrate processing apparatus is transported to the processing unit. The protective film forming unit has a nozzle that discharges the coating liquid of the protective film,
The determination means includes
A nozzle detector for detecting a discharge state of the coating liquid discharged from the nozzle;
The discharge state determination part which determines whether the formation of the protective film in the said protective film formation unit is normal based on the discharge state detected by the said nozzle detector is characterized by the above-mentioned. The substrate processing apparatus according to any one of the above. The determination means includes
An imaging device for imaging a substrate on which a protective film is formed in the protective film forming unit;
The image determination part which determines whether formation of the protective film in the said protective film formation unit is normal based on the image obtained by the said imaging device is included in any one of Claims 1-6 characterized by the above-mentioned. The substrate processing apparatus as described. The determination means includes
A film thickness measuring instrument for measuring the thickness of the protective film formed on the substrate in the protective film forming unit;
A film thickness determination unit that determines whether or not the formation of the protective film in the protective film forming unit is normal based on the thickness of the protective film measured by the film thickness measuring device. The substrate processing apparatus in any one of 1-7. The processor is
A pump for supplying the protective film coating solution to the protective film forming unit;
The determination means includes
A pump pressure measuring device for measuring the supply pressure of the pump;
And a pump pressure determining unit that determines whether or not the formation of the protective film in the protective film forming unit is normal based on the supply pressure of the pump measured by the pump pressure measuring device. Item 9. The substrate processing apparatus according to any one of Items 1 to 8. The processor is
A motor for driving the pump;
The determination means includes
A step-out detector that detects the presence or absence of step-out of the motor;
A step-out determination unit for determining whether or not the formation of the protective film in the protective film forming unit is normal based on the presence or absence of the step-out of the motor detected by the step-out detector. The substrate processing apparatus according to claim 9. The processor is
A supply pipe for guiding the protective film coating solution to the protective film forming unit;
The determination means includes
A flow rate measuring device for measuring the flow rate of the coating liquid supplied to the protective film forming unit through the supply pipe;
The flow rate determination part which determines whether formation of the protective film in the said protective film formation unit is normal based on the flow volume measured by the said flow measuring device, The any one of Claims 1-10 characterized by the above-mentioned. A substrate processing apparatus according to claim 1.

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