JP4827263B2 - Heat treatment equipment - Google Patents

Description

  The present invention relates to a heat treatment apparatus for heat treating a substrate to be treated such as a coated semiconductor wafer or a glass substrate (FPD substrate) for a liquid crystal display.

  In general, in photolithography technology for manufacturing semiconductor devices, a photoresist is applied to a semiconductor wafer, an FPD substrate, etc., and a resist film formed thereby is exposed according to a predetermined circuit pattern, and this exposure pattern is developed. As a result, a circuit pattern is formed on the resist film.

  In such a photolithography technique, various heat treatments such as heat treatment after resist coating (pre-baking), heat treatment after exposure (post-exposure baking), heat treatment after development processing (post-baking) and the like are performed. Yes.

  In this type of conventional heat treatment, for example, in pre-baking, a purge gas such as air or nitrogen (N2) gas is supplied into a processing chamber containing a wafer or the like, and an exhaust gas connected to the processing chamber is supplied to the fluid used for the processing. The air is exhausted to the outside through a pipeline. At this time, a slight sublimation from the resist film formed on the surface of the wafer or the like during heating {such as an acid generator contained in the photoresist such as PAG (Photo asid grain) or a low molecular resin constituting the resist}. Foreign matter is generated. In particular, in photoresists using nonionic acid generators with a low boiling point, the generation of sublimates increases, and during continuous operation, these sublimates accumulate in the exhaust pipe and cause deterioration in exhaust characteristics. There is a risk of causing defects in the product device.

  Therefore, conventionally, an impurity recovery unit such as a sublimate is provided in an exhaust line such as an exhaust pipe line, and a plurality of impurity recovery units and a plurality of peripheral side portions of the lid constituting the processing chamber are provided to uniformly distribute the exhaust. An exhaust rectifying plate is provided (see, for example, Patent Document 1).

Conventionally, the exhaust pipe is replaced during maintenance to restore the initial state, or a tape heater is wound around the exhaust pipe, and the temperature of the exhaust pipe rises so that the sublimate adheres and accumulates. Is suppressed.
Japanese Patent Laying-Open No. 2003-318091 (Claims, FIG. 4)

  However, in the technique described in Patent Document 1, if the generation of impurities such as sublimates is large, the exhaust pipe is clogged in a short time, and therefore maintenance must be performed frequently. There was a problem. Further, although impurities also adhere to the exhaust rectifying plate, there is a problem that the cleaning and maintenance work is troublesome because a plurality of exhaust rectifying plates are provided in order to reduce the exhaust pressure. Furthermore, in the structure in which a plurality of exhaust current plates are provided on the peripheral side portion of the lid constituting the processing chamber, there is a problem that the apparatus becomes complicated and the apparatus becomes large.

  In addition, if the exhaust pipe is replaced at the time of maintenance to restore the initial state, maintenance must be performed frequently. In addition, as a means for suppressing the adhesion and accumulation of sublimates by increasing the temperature of the exhaust pipe by wrapping a tape heater outside the exhaust pipe, the pipe is not used in the transparent exhaust pipe that is generally used. There is a problem that the state inside the passage cannot be confirmed, and it is not known whether the replacement timing of the exhaust pipe is optimal, and there is a problem that the tape heater affects the scooping of the exhaust pipe.

  The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a heat treatment apparatus that prevents adhesion and deposition of impurities such as sublimates generated by heat treatment in an exhaust pipe.

In order to solve the above-mentioned problems, the invention described in claim 1 is a heat treatment apparatus for heat-treating a substrate to be processed in a processing chamber, and is disposed in the processing chamber to place the substrate to be processed and heat it to a predetermined temperature. A heating plate, an exhaust port provided at an upper portion of the processing chamber and exhausting a gas generated in the processing chamber by heat treatment, an exhaust pipe connected to the exhaust port, and an exhaust pipe connected to the exhaust pipe, Gas supply means having gas injection holes for injecting gas along the inner wall of the exhaust pipe and the flow direction of the exhaust gas in order to prevent impurities such as sublimates in the gas from adhering to the inner wall of the exhaust pipe; The gas supply means is inserted along the exhaust gas direction in the exhaust pipe and has a cylindrical gas supply body whose front end is closed, and an outer periphery and a longitudinal direction of the body portion of the gas supply body A plurality of gas injection holes provided along the A gas supply source connected to the gas supply body via a supply pipe, and the heating means for forming the gas supply body with a heat-generating member and heating the gas supply body to the gas supply body It is characterized by being connected.

  With this configuration, when the exhaust gas containing sublimate discharged from the processing chamber flows through the exhaust pipe, the flow direction of the exhaust gas from the gas injection hole of the gas supply means to the inner wall of the exhaust pipe and the exhaust gas By injecting the gas along the exhaust gas, the flow rate of the exhaust gas flowing through the exhaust pipe becomes faster at the center side than the inner wall of the exhaust pipe, and the chance of the exhaust gas touching the inner wall of the exhaust pipe is reduced. be able to.

According to the first aspect of the present invention, the inner wall of the exhaust pipe and the exhaust gas are formed from the gas injection holes provided in the body portion of the cylindrical gas supply body inserted along the exhaust gas direction in the exhaust pipe. By injecting the gas along the flow direction, the number of machines in which the exhaust gas touches the inner wall of the exhaust pipe line can be reduced. In this case, by providing a plurality of gas injection holes provided in the body of the gas supply body along the outer periphery and the longitudinal direction of the body, the amount of gas injection can be increased, and the exhaust gas is formed on the inner wall of the exhaust pipe. The number of touching machines can be further reduced.

In the present invention, a temperature detection sensor for detecting the temperature of the exhaust gas is disposed on the exhaust pipe downstream of the gas supply body, and the heating means is heated based on the detection signal of the temperature detection sensor. It is preferable to provide a control means for controlling the temperature (Claim 2 ).

According to the first aspect of the present invention, the gas supply body is heated to increase the temperature of the exhaust gas, so that the impurities such as sublimates contained in the exhaust gas are solidified to adhere to the inner wall of the exhaust pipe. Can be prevented. In this case, a temperature detection sensor for detecting the temperature of the exhaust gas is disposed on the downstream side of the gas supply body in the exhaust pipe, and the exhaust gas is heated by heating the gas supply body based on the detection signal of the temperature detection sensor. Adhering to the inner wall of the exhaust pipe can be prevented while grasping the state of solidification of impurities such as sublimates contained in the gas (claim 2 ).

  According to this invention, since it is configured as described above, the following effects can be obtained.

(1) According to the first aspect of the invention, the exhaust gas is injected from the gas injection hole of the gas supply means along the inner wall of the exhaust pipe and the flow direction of the exhaust gas, so that the exhaust gas becomes the inner wall of the exhaust pipe As a result, it is possible to prevent adhesion and accumulation of impurities such as sublimates generated by heat treatment in the exhaust pipe.

(2) According to the first and second aspects of the invention, it is possible to prevent adhesion to the inner wall of the exhaust pipe while grasping the state of solidification of impurities such as sublimates contained in the exhaust gas.

  DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the best embodiment of the present invention will be described in detail with reference to the accompanying drawings. Here, a case where the heat treatment apparatus according to the present invention is applied to a heat treatment apparatus in a semiconductor wafer resist coating / development processing system will be described.

  1 is a schematic plan view showing a semiconductor wafer resist coating / development processing system equipped with a heat treatment apparatus according to the present invention, FIG. 2 is a schematic front view of the resist coating / development processing system, and FIG. It is a schematic rear view of a development processing system.

  As shown in FIG. 1, the resist coating / development processing system 1 carries, for example, 25 wafers W in the cassette unit from the outside to the resist coating / development processing system 1 and also transfers wafers to the cassette C. A cassette station 2 for loading and unloading W; a processing station 3 provided adjacent to the cassette station 2 and arranged in a multi-stage with various processing units for performing predetermined processing in a single-wafer type in the coating and developing process; The interface unit 4 for transferring the wafer W to and from an exposure apparatus (not shown) provided adjacent to the processing station 3 is integrally connected.

  The cassette station 2 can mount a plurality of cassettes C at a predetermined position on the cassette mounting table 5 in a row in the horizontal X direction. Further, the cassette station 2 is provided with a wafer transfer arm 7 that can move on the transfer path 6 along the X direction. The wafer transfer arm 7 is also movable in the wafer arrangement direction (Z direction; vertical direction) of the wafers W accommodated in the cassette C, and is selective to the wafers W in each cassette C arranged in the X direction. Is configured to be accessible.

  Further, the wafer transfer arm 7 is configured to be rotatable in the θ direction around the Z axis, and as will be described later, with respect to the transition device (TRS) 31 belonging to the third processing unit group G3 on the processing station 3 side. Even it is configured to be accessible.

  The processing station 3 includes, for example, five processing unit groups G1 to G5 in which a plurality of processing units are arranged in multiple stages. As shown in FIG. 1, on the front side of the processing station 3, a first processing unit group G1 and a second processing unit group G2 are sequentially arranged from the cassette station 2 side. Further, on the back side of the processing station 3, a third processing unit group G3, a fourth processing unit group G4, and a fifth processing unit group G5 are sequentially arranged from the cassette station 2 side. A first transport mechanism 110 is provided between the third processing unit group G3 and the fourth processing unit group G4. The first transport mechanism 110 is configured to selectively access the first processing unit group G1, the third processing unit group G3, and the fourth processing unit group G4 to transport the wafer W. A second transport mechanism 120 is provided between the fourth processing unit group G4 and the fifth processing unit group G5. The second transfer mechanism 120 is configured to selectively access the second processing unit group G2, the fourth processing unit group G4, and the fifth processing unit group G5 to transfer the wafer W.

  In the first processing unit group G1, as shown in FIG. 2, a liquid processing unit for supplying a predetermined processing liquid to the wafer W for processing, for example, a resist coating unit (COT) for applying a resist liquid to the wafer W 10, 11, 12 and bottom coating units (BARC) 13, 14 forming an antireflection film for preventing reflection of light at the time of exposure are stacked in five stages in order from the bottom. In the second processing unit group G2, liquid processing units, for example, development processing units (DEV) 20 to 24 that perform development processing on the wafer W are stacked in five stages in order from the bottom. Further, at the bottom of the first processing unit group G1 and the second processing unit group G2, a chemical chamber (CHM) for supplying various processing liquids to the liquid processing units in the processing unit groups G1 and G2. 25 and 26 are provided, respectively.

  On the other hand, as shown in FIG. 3, the third processing unit group G3 includes, in order from the bottom, a temperature control unit (TCP) 30, a transition device (TRS) 31 for delivering the wafer W, and a highly accurate temperature. Heat treatment units (ULHP) 32 to 38 that heat-treat the wafer W under management are stacked in nine stages.

  In the fourth processing unit group G4, for example, a high-precision temperature control unit (CPL) 40, pre-baking units (PAB) 41 to 44 for heat-treating the resist-coated wafer W, and the wafer W after development processing are heat-treated. Post baking units (POST) 45 to 49 are stacked in 10 stages in order from the bottom.

  In the fifth processing unit group G5, a plurality of heat treatment units that heat-treat the wafer W, for example, high-precision temperature control units (CPL) 50 to 53, post-exposure baking units (PEB) 54 to heat-treat the exposed wafer W, 59 are stacked in 10 steps from the bottom.

  Further, as shown in FIG. 1, a plurality of processing units are arranged on the positive side in the X direction of the first transfer mechanism 110. For example, as shown in FIG. 3, the wafer W is subjected to a hydrophobic treatment. Adhesion units (AD) 80 and 81 and heating units (HP) 82 and 83 for heating the wafer W are stacked in four stages in order from the bottom. Further, as shown in FIG. 1, for example, a peripheral exposure unit (WEE) 84 that selectively exposes only the edge portion of the wafer W is disposed on the back side of the second transfer mechanism 120.

  In addition, as shown in FIG. 2, an air conditioning unit 90 for air conditioning the inside of each block is provided above the blocks of the cassette station 2, the processing station 3, and the interface unit 4. With the air conditioning unit 90, the cassette station 2, the processing station 3, and the interface unit 4 can be adjusted to a predetermined temperature and humidity. Also, as shown in FIG. 3, for example, a predetermined gas is supplied to each device in the third processing unit group G3, the fourth processing unit group G4, and the fifth processing unit group G5 in the upper part of the processing station 3. For example, gas supply units 91 that are gas supply means such as FFU (fan filter unit) to be supplied are provided. The gas supply unit 91 can blow the gas at a predetermined flow rate after removing impurities from the gas adjusted to a predetermined temperature and humidity.

  As shown in FIG. 1, the interface unit 4 includes a first interface unit 100 and a second interface unit 101 in order from the processing station 3 side. In the first interface unit 100, a wafer transfer arm 102 is disposed at a position corresponding to the fifth processing unit group G5. For example, buffer cassettes 103 (on the back side in FIG. 1) and 104 (on the front side in FIG. 1) are installed on both sides of the wafer transfer arm 102 in the X direction. The wafer transfer arm 102 can access the heat treatment apparatus and the buffer cassettes 103 and 104 in the fifth processing unit group G5. The second interface unit 101 is provided with a wafer transfer arm 106 that moves on a transfer path 105 provided in the X direction. The wafer transfer arm 106 is movable in the Z direction and rotatable in the θ direction, and can access the buffer cassette 104 and an exposure apparatus (not shown) adjacent to the second interface unit 101. . Therefore, the wafer W in the processing station 3 can be transferred to the exposure apparatus via the wafer transfer arm 102, the buffer cassette 104, and the wafer transfer arm 106, and the wafer W after the exposure process is transferred to the wafer transfer arm 106 and the buffer. It can be transferred into the processing station 3 via the cassette 104 and the wafer transfer arm 102.

  Next, the wafer W processing process performed in the resist coating / development processing system 1 configured as described above will be briefly described. First, when a cassette C containing a plurality of unprocessed wafers W is placed on the mounting table 6, one wafer W is taken out from the cassette C, and a third processing unit group G 3 is taken by the wafer transfer arm 7. It is conveyed to the temperature control unit (TCP) 30. The wafer W transferred to the temperature control unit (TCP) 30 is adjusted to a predetermined temperature, and then transferred to the bottom coating unit (BARC) 13 by the first transfer mechanism 110 to form an antireflection film on the surface. The The wafer W on which the antireflection film is formed is transferred by the first transfer mechanism 110 into the heat treatment apparatuses 32 to 38 (hereinafter represented by the heat treatment apparatus 32).

  The wafer W heat-treated by the heat treatment apparatus 32 is taken out from the heat treatment apparatus 32 by the first wafer transfer mechanism 110 and then transferred to the resist coating unit 10 to be subjected to a resist coating process. The resist-processed wafer W is transferred to a pre-baking unit (PAB) 41 and subjected to heat processing.

  The wafer W that has been subjected to the heat treatment in the pre-baking unit (PAB) 41 is transported to the peripheral exposure device 84 by the second transport mechanism 120, subjected to the peripheral exposure processing, and then transported to the high-precision temperature control unit (CPL) 53. Is done. Thereafter, the wafer W is transferred to the buffer cassette 104 by the wafer transfer body 102 of the first interface unit 100 and then transferred to an exposure apparatus (not shown) by the wafer transfer arm 106 of the second interface unit 101. The wafer W after the exposure processing is transferred to the buffer cassette 103 via the buffer cassette 104 by the wafer transfer arm 106 and the wafer transfer arm 102. Thereafter, the wafer W is transferred to, for example, a heat treatment apparatus (PEB) 54 by the wafer transfer arm 102.

  The wafer W transferred into the housing 61 of the heat treatment apparatus (PEB) 54 is transferred from the wafer transfer arm 106 to the transfer arm 60a having a cooling function, and the wafer W is placed on the heating plate 65 from the transfer arm 60a. Is done. Then, the lid 62 is lowered by the driving of an opening / closing drive mechanism 62a described later, and the wafer W is heated to, for example, 100 to 350 ° C. with the wafer W placed in the processing chamber 63.

  After the heat treatment, the lid 62 is lifted by driving the opening / closing drive mechanism 62a, and subsequently or simultaneously, the support pins 65d are lifted by driving an elevating drive mechanism 65c described later to move the wafer W above the heating plate 65. Then, the wafer W is delivered onto the delivery arm 60a that has moved again above the heating plate 65. The transfer arm 60a that receives the wafer W cools the wafer W to, for example, about 23 ° C. while moving backward from above the heating plate 65.

  The wafers W that have been subjected to the heat treatment in the heat treatment apparatus (PEB) 54 are sequentially transferred to the high-precision temperature control unit (CPL) 51, the development processing unit (DEV) 20, and the post-baking unit (PEB) 45 by the second transfer mechanism 120. After being conveyed, each unit performs a predetermined process. The wafer W that has undergone the post-baking process is transferred to the transition device 31 by the first transfer mechanism 110 and then returned to the cassette C by the wafer transfer arm 7. In this way, a series of wafer processing in the resist coating / development processing system 1 is completed. In the resist coating / development processing system 1, the wafer processing as described above is continuously performed on a plurality of wafers W at the same time.

  Next, the heat treatment apparatus according to the present invention will be described with reference to the heat treatment units 54 to 59 in the fifth treatment unit group G5.

<First Embodiment>
FIG. 4 is a cross-sectional view showing a use state of the first embodiment of the heat treatment apparatus according to the present invention, and FIG. 5 is an enlarged cross-sectional view showing the exhaust part of the heat treatment apparatus (a) and II line in (a). FIG. 6 is a schematic perspective view of the exhaust part.

  As shown in FIG. 4, each of the heat treatment apparatuses 54 to 59 (represented by reference numeral 60 below) has a casing 61 that can be closed, and a wafer W is loaded into and removed from each casing 61. A wafer loading / unloading port 61a and a shutter 61b for opening and closing the wafer loading / unloading port 61a are provided (see FIG. 6).

  The heat treatment apparatus 60 is located in the above-described closable casing 61, a lid 62 that can move up and down, and a support that constitutes the processing chamber 63 in cooperation with the lid 62. A ring 64 is provided.

  The support ring 64 has, for example, a substantially cylindrical shape whose upper and lower surfaces are open, and accommodates a heating plate 65 that is a heat treatment plate inside thereof. The heating plate 65 has a thick disk shape, and places and heats the wafer W, which is the substrate to be processed, on the upper surface thereof. In this case, the heating plate 65 has a built-in heater 65a that generates heat by power feeding, and the heating plate 65 itself can be heated and maintained at a predetermined temperature, for example, 100 to 350 ° C. In other words, by placing the wafer W on the heating plate 65 heated to a predetermined temperature, the wafer W can be heated to the predetermined temperature.

  Near the center of the heating plate 65, a plurality of, for example, three through holes 65b are provided. Each through hole 65b is formed with a support pin 65d that can be lifted and lowered by a lifting drive mechanism 65c. With the support pins 65d, the wafer W can be moved up and down on the heating plate 65, and the wafer W can be transferred between the heating plate 65 and the transfer arm 60a.

  An annular groove 64a is provided on the upper surface of the support ring 64, and an O-ring 64b is fitted into the annular groove 64a. The upper surface of the support ring 64 and the lower end of the circumferential side portion 62d of the lid body 62 are provided. The gas in the processing chamber 63 does not flow out from the gap with the part.

  The lid 62 is supported by an arm 62b that moves up and down by an opening / closing drive mechanism 62a. The lid 62 moves up and down at a predetermined timing to form a processing chamber 63 integrally with the support ring 64, or to form the processing chamber 63. It is configured so that it can be opened.

  The lid 62 has a substantially bottomed cylindrical shape whose bottom surface is opened by a top plate 62c that is an upper surface portion and a peripheral side portion 62d that is suspended from a peripheral end portion of the top plate 62c. The top plate 62 c faces the wafer W placed on the heating plate 65. An exhaust port 66 for exhausting exhaust gas containing sublimates generated from the resist film applied to the wafer W when heat-treated by heating the heating plate 65 is provided at the center of the top plate 62c. . An exhaust pipe 67 formed of, for example, a transparent fluororesin tube connected to an exhaust device (not shown) such as a vacuum pump is connected to the exhaust port 66 through an O-ring 68. Further, the exhaust pipe 67 is made of a gas that prevents impurities such as sublimates in the exhaust gas from adhering to the inner wall of the exhaust pipe 67, such as an inert gas such as air or nitrogen (N 2) gas. Gas supply means 70 for injecting along the inner wall of the passage 67 and the flow of the exhaust gas is interposed.

  As shown in FIGS. 4 and 5, the gas supply means 70 is interposed in the exhaust pipe 67 by a joint member 70 a. The gas supply means 70 is inserted along the exhaust gas direction in the exhaust pipe 67 and has a cylindrical gas supply body 71 whose front end is closed, and an outer periphery and a longitudinal direction of the body portion 71 a of the gas supply body 71. A plurality of gas injection holes 72 and a gas supply source, for example, an air supply source 74 connected to the gas supply body 71 through a gas supply line 73 provided with an on-off valve V. In this case, as long as a plurality of gas injection holes 72 are provided along the outer periphery and the longitudinal direction of the body 71a of the gas supply body 71, the positional relationship between the gas injection holes 72 may be arbitrary, for example, the concentricity of the body 71a. A plurality of states may be provided on the outer peripheral surface with appropriate intervals, and a plurality of rows may be provided at intervals along the longitudinal direction of the gas supply body 71. Alternatively, a plurality of gas injection holes 72 may be provided in the body portion 71a. It is good also as a form provided helically in an outer peripheral surface.

  The on-off valve V interposed in the gas supply line 73 is electrically connected to a controller 75 as control means, and the controller 75 controls the gas (air) in the exhaust line 67. Air is supplied (injected) to the exhaust pipe 67. In this case, the controller 75 stores in advance information on the state of the heat treatment in the processing chamber 63 and the state of impurities such as sublimates generated in the processing chamber 63 by the heat treatment, and exhausts based on this stored information. It is formed so that air can be supplied into the pipe line 67, that is, air can be injected along the inner wall of the exhaust pipe line 67 and the flow direction of the exhaust gas. With this configuration, the air supply (injection) timing and the supply (injection) time are programmed in the controller 75 based on the information on the occurrence of sublimation in advance obtained for each of different types of resist solutions. Thus, the supply (injection) of air is automatically controlled.

  The controller 75 is electrically connected to the raising / lowering drive mechanism 65c of the support pin 65d and the opening / closing drive mechanism 62a of the lid 62, detects the elevation of the support pin 65d and the lid 62, and based on the detection signal. The on-off valve V of the gas supply means 70 is configured to be controlled.

  The operation mode of the heat treatment apparatus 60 configured as described above will be described with reference to FIG. 7. When the wafer W is not in the process chamber 63 before the process, the driving of the exhaust device is stopped and the controller 75 The on-off valve V is closed by this signal, and air is not supplied into the exhaust pipe 67 (see FIG. 7A).

  After that, when the wafer W is placed on the heating plate 65 and the wafer W is heated by the heating plate 65 in a state where the lid 62 is closed, the sublimate is removed from the resist film applied to the wafer W. appear. The on-off valve V is opened based on a signal from the controller 75 in accordance with the timing at which the sublimate is generated, for example, 60 to 90 seconds from the beginning of the heat treatment, and the gas is supplied from the air supply source 74 via the gas supply line 73. Air is supplied to the supply body 71, and air is injected from the gas injection holes 72 of the gas supply body 71 along the inner wall of the exhaust pipe 67 and the flow direction of the exhaust gas (see FIG. 7B). As a result, the exhaust gas flowing through the exhaust pipe 67 has a higher flow velocity on the center side than the inner wall side of the exhaust pipe 67, and the opportunity for the exhaust gas to touch the inner wall of the exhaust pipe 67 can be reduced. Therefore, impurities such as sublimates contained in the exhaust gas can be prevented from adhering to the inner wall of the exhaust pipe 67.

  In the latter stage of the heat treatment, no sublimate is generated from the resist film applied to the wafer W. Therefore, at this time, the on-off valve V is closed based on a signal from the controller, and the supply of air to the gas supply means 70 is stopped. Stop (see FIG. 7C).

  As described above, by controlling the gas supply means 70 according to the state of the heat treatment in the treatment chamber 63 and the state of impurities such as sublimates generated in the treatment chamber 63 by the heat treatment, the exhaust gas in the exhaust gas generated by the heat treatment is controlled. It is possible to reliably and efficiently prevent impurities such as sublimates from adhering to the inner wall of the exhaust pipe 67.

Second Embodiment
FIG. 8 is a cross-sectional view showing a main part of a second embodiment of the heat treatment apparatus according to the present invention.

  In the second embodiment, the gas supply body 71 of the gas supply means 70 in the heat treatment apparatus of the first embodiment is inserted into the exhaust pipe 67 so as to be rotatable in the axial direction, and is inserted into the base end portion of the gas supply body 71. This is a case where it is formed so as to be rotatable by a rotation mechanism 76 made of, for example, a cylinder motor. The rotation mechanism 76 is connected to a drive power source 76b via an operation switch 76a, and the operation switch 76a is controlled to be turned on and off based on a signal from the controller 75. Accordingly, the gas supply body 71 can be rotated in the axial direction by driving the rotation mechanism 76 in accordance with the timing at which air is injected from the gas injection hole 72 of the gas supply body 71 into the exhaust pipe 67. Further, the exhaust gas is agitated by the air injected from the gas injection holes 72, and thus it is possible to reliably prevent impurities such as sublimates in the exhaust gas from adhering to the inner wall of the exhaust pipe 67.

  In the second embodiment, the other structure is the same as that of the first embodiment, so the same parts are denoted by the same reference numerals and description thereof is omitted.

<Third Embodiment>
FIG. 9 is a sectional view showing an essential part of a third embodiment of the heat treatment apparatus according to the present invention.

  In the third embodiment, a gas supply body 71A constituting the gas supply means 70 is formed of a heat-generating member, and heating means for heating the gas supply body 71A, for example, a heater device 77 is connected to the gas supply body 71A. This is a case where the gas supply body 71A itself is formed so as to be heated by heating from the heater device 77.

  In the third embodiment, a temperature detection sensor 78 for detecting the temperature of the exhaust gas is disposed on the downstream side of the gas supply body 71A in the exhaust pipe 67, and a controller 75 is electrically connected to the temperature detection sensor 78. The detection signal of the temperature detection sensor 78 is transmitted to the controller 75. Thus, the gas supply body 71A itself can be heated to a predetermined temperature by controlling the heating temperature of the heater device 77 based on the detection signal of the temperature detection sensor 78. In this case, the temperature for heating the gas supply body 71A itself needs to consider the case where the exhaust pipe 67 is formed of a fluororesin tube, and is a temperature at which the fluororesin tube does not melt, for example, 200 ° C. or less. Must be set.

  As described above, by heating the gas supply body 71A based on the detection signal of the temperature detection sensor 78 that detects the temperature of the exhaust gas, the state of solidification of impurities such as sublimates contained in the exhaust gas can be confirmed. Adhering to the inner wall of the exhaust pipe 67 can be prevented while grasping.

  In the third embodiment, the other structures are the same as those in the first embodiment, so the same parts are denoted by the same reference numerals and description thereof is omitted.

<Fourth embodiment>
FIG. 10 is a sectional view showing an essential part of a fourth embodiment of the heat treatment apparatus according to the present invention.

  In the fourth embodiment, a gas heating means such as a gas heater 79 is provided in the gas supply line 73 to heat (heat) the gas supplied from the air supply source 74 to the gas supply body 71. Is the case. In this case, a temperature detection sensor 78A for detecting the temperature of the exhaust gas is disposed downstream of the gas supply body 71 in the exhaust pipe 67, and a controller 75 is electrically connected to the temperature detection sensor 78A. A detection signal from the temperature detection sensor 78 is transmitted to the controller 75. Thereby, the heating temperature of the gas heater 79 is controlled based on the detection signal of the temperature detection sensor 78A, and the air injected into the exhaust pipe 67 from the gas injection hole 72 of the gas supply body 71 is heated to a predetermined temperature. can do. In this case, the temperature at which the air injected into the exhaust pipe 67 is heated needs to take into account the case where the exhaust pipe 67 is formed of a fluororesin tube. It is necessary to set the temperature not to be, for example, 200 ° C. or lower.

  As described above, the exhaust gas is heated by heating the air injected from the gas injection hole 72 of the gas supply body 71 into the exhaust pipe 67 based on the detection signal of the temperature detection sensor 78A that detects the temperature of the exhaust gas. It is possible to prevent the exhaust pipe 67 from adhering to the inner wall while grasping the state of solidification of impurities such as sublimates contained in the gas.

  In the fourth embodiment, the other structures are the same as those in the first embodiment, so the same parts are denoted by the same reference numerals and description thereof is omitted.

<Fifth Embodiment>
FIG. 11: is sectional drawing (b) which follows the II-II line of (a) and (a) which shows the principal part of 5th Embodiment of the heat processing apparatus which concerns on this invention.

  In the fifth embodiment, the gas supply body 71B constituting the gas supply means 70B is formed of a substantially cylindrical porous member having a large number of gas injection holes 72B inserted and inserted into the exhaust pipe 67. This is a case where a gas supply source (air supply source 74) is connected to the hole 72B via a gas supply line 73 and a gas introduction path 73A connected to the gas supply line 73. In this case, the gas supply body 71B is formed in a thick, substantially cylindrical shape. In addition, you may form the expansion taper part 71b in the opening edge part of the upstream of the gas supply body 71B. Thereby, the passage of the exhaust gas exhausted from the processing chamber 63 side can be made smooth.

  According to the heat treatment apparatus of the fifth embodiment configured as described above, the inner wall of the exhaust pipe 67 from the gas injection hole 72B of the gas supply body 71B made of a porous member inserted into the exhaust pipe 67, and By injecting the gas along the flow direction of the exhaust gas, the exhaust gas flowing through the exhaust pipe 67 has a higher flow velocity on the center side than the inner wall side of the exhaust pipe 67, and the exhaust gas flows into the exhaust pipe 67. You can reduce the chance of touching the inner wall. Therefore, impurities such as sublimates contained in the exhaust gas can be prevented from adhering to the inner wall of the exhaust pipe 67.

<Other embodiments>
In the third embodiment, the case where the gas supply body 71A constituting the gas supply means 70 of the first embodiment is formed of a heat generating member has been described. However, the gas supply body made of the porous member of the fifth embodiment. 71B is formed of an exothermic member, and the heating means, for example, the heating temperature of the heater device 77 is controlled based on the detection signal of the temperature detection sensor 78 to heat the gas supply body 71B itself as in the third embodiment. You may make it do.

  Also in the fifth embodiment, similarly to the fourth embodiment, the gas supply pipe 73 is provided with a gas heating means such as a gas heater 79 and supplied from the air supply source 74 to the gas supply body 71. The gas to be heated is heated (heated), and the heating temperature of the gas heater 79 is controlled based on the detection signal of the temperature detection sensor 78A to be injected into the exhaust pipe 67 from the gas injection hole 72 of the gas supply body 71. The air to be heated may be heated to a predetermined temperature.

  In the above embodiment, the case where the heat treatment apparatus according to the present invention is applied to a resist coating / development processing system for a semiconductor wafer has been described. However, a substrate to be processed other than a semiconductor wafer, for example, a glass substrate (FPD substrate for a liquid crystal display) ), Mask substrate and the like.

1 is a schematic plan view showing an example of a resist coating / development processing system to which a heat treatment apparatus according to the present invention is applied. It is a schematic front view of the said resist application | coating / development processing system. It is a schematic rear view of the resist coating / developing system. It is sectional drawing which shows the use condition of 1st Embodiment of the heat processing apparatus which concerns on this invention. It is an expanded sectional view in alignment with the II line of (a) and (a) which shows the exhaust part of the said heat processing apparatus. It is a schematic perspective view of the said exhaust part. It is a schematic perspective view which shows the exhaust part of the said heat processing apparatus. It is a schematic sectional drawing which shows the timing of adhesion prevention of impurities, such as a sublimate in exhaust gas. It is sectional drawing which shows the principal part of 2nd Embodiment of the heat processing apparatus which concerns on this invention. It is sectional drawing which shows the principal part of 3rd Embodiment of the heat processing apparatus which concerns on this invention. It is sectional drawing which shows the principal part of 4th Embodiment of the heat processing apparatus which concerns on this invention. It is sectional drawing (b) which follows the II-II line of (a) and (a) which shows the principal part of 5th Embodiment of the heat processing apparatus which concerns on this invention.

W Semiconductor wafer (substrate to be processed)
60 Heat Treatment Device 62 Lid 63 Processing Chamber 65 Heating Plate 66 Exhaust Port 67 Exhaust Pipes 70, 70B Gas Supply Units 71, 71A, 71B Gas Supply Body 71a Body 72, 72B Gas Injection Hole 73 Gas Supply Pipe 73A Gas Introduction Route 74 Air supply source (gas supply source)
75 Controller (control means)
76 Rotating mechanism 77 Heater device (heating means for gas supply body)
78, 78A Temperature detection sensor 79 Gas heater

Claims (2)

In a heat treatment apparatus for heat treating a substrate to be treated in a treatment chamber,
A heating plate disposed in the processing chamber for placing the substrate to be processed and heating it to a predetermined temperature;
An exhaust port provided at an upper portion of the processing chamber for exhausting a gas generated in the processing chamber by heat treatment;
An exhaust line connected to the exhaust port;
In order to prevent impurities such as sublimates in the exhaust gas from adhering to the inner wall of the exhaust pipe, gas is passed along the inner wall of the exhaust pipe and the flow direction of the exhaust gas. Gas supply means having gas injection holes for injection,
A plurality of the gas supply means are provided along the outer circumference and the longitudinal direction of the cylindrical gas supply body inserted along the exhaust gas direction in the exhaust pipe line and closed at the tip. A gas supply hole connected to the gas supply body via a gas supply line,
A heat treatment apparatus, wherein the gas supply body is formed of an exothermic member, and heating means for heating the gas supply body is connected to the gas supply body. The heat treatment apparatus according to claim 1, wherein
A temperature detection sensor that is disposed downstream of the gas supply body in the exhaust pipe and detects the temperature of the exhaust gas, and a control unit that controls the heating temperature of the heating unit based on a detection signal of the temperature detection sensor A heat treatment apparatus characterized by further comprising:

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