JP2010010251A - Substrate processing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing device achieving uniformity of a process film, mist prevention and increase of exhaust efficiency of a factory. <P>SOLUTION: The substrate processing device supplies a resist liquid onto the surface of a wafer rotated by a spin chuck 16 from an application nozzle 17 and spreads the liquid to form a resist film. The device includes an outer cap 62 with an outer wall part 62a surrounding the outer side of the wafer held by the spin chuck, an inner cap 63 disposed under the outer periphery of the wafer, a middle cap 64 fixed to the inner peripheral surface of the outer wall part of the outer cap, disposed with a gap 65 between it and the outer peripheral edge of the wafer and having a plurality of air holes 66 communicating an upper part of the outer cap with the outer side of the inner cap, an open/close member 67 shutting off an air flow passing through the air holes in the middle cap, and an elevating cylinder 68 moving the open/close member to open/close it. When supplying the resist liquid, the air holes are closed by the open/close member. When forming the resist film, the air holes are opened. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus for forming a processing film such as a resist solution on a substrate such as a semiconductor wafer or an FPD (flat panel display) substrate.

  In general, in the manufacture of semiconductor devices, photolithography technology is used to form a circuit pattern by applying a photosensitive agent to a semiconductor wafer, an FPD substrate or the like (hereinafter referred to as a wafer) and exposing the mask pattern. Has been. In this photolithography technique, a photoresist solution is applied to a wafer or the like by a spin coating method, the resist film formed thereby is exposed according to a predetermined circuit pattern, and this exposure pattern is developed to form a resist film A circuit pattern is formed.

  In general, in the spin coating method, a wafer or the like is rotated in a coater cup composed of an outer cup and an inner cup in order to receive the scattered resist solution.

  In addition, in order to prevent the resist solution scattered from the edge of the wafer, etc. from becoming a mist and soaring above the cup and adhering to surrounding devices and equipment, it is exhausted from the bottom of the cup. ing.

  Furthermore, in the case of a resist coating apparatus that rotates a wafer or the like at a high speed, an air current that controls the air current in the vicinity of the wafer between the outer cup and the inner cup in order to suppress the phenomenon that the resist film on the peripheral portion of the wafer or the like swells. The thing of the structure which has arrange | positioned the control board is known (for example, refer patent document 1).

In the conventional cup exhaust, the exhaust pressure at the time of discharging (supplying) the resist solution or the rinse solution is set for the purpose of collecting mist. Further, the exhaust portions of the plurality of resist coating apparatuses are connected to an exhaust system of a factory, and the exhaust is discharged outside the factory.
JP 2001-189266 A (Claims, FIGS. 1 and 2)

  However, as the throughput is improved, it is necessary to increase the number of mounted coater cups. However, there is a problem that the required amount of exhaust increases and the exhaust capacity of the factory is pressed. In order to solve this problem, it is conceivable to reduce the exhaust amount. However, in order to achieve prevention of mist at the time of discharging the resist solution or the rinse solution, the exhaust amount cannot be reduced.

  The present invention has been made in view of the above circumstances, and it is an object of the present invention to provide a substrate processing apparatus capable of achieving uniformity of a processing film, preventing mist, and improving the exhaust efficiency of a factory. And

  In order to solve the above problems, a substrate processing apparatus of the present invention is a substrate processing apparatus for supplying a processing liquid to a surface of a rotating substrate to be processed and spreading the processing liquid to form a processing film, A holding unit that holds the substrate in a horizontal posture, a rotation mechanism that rotates the substrate to be processed in a horizontal plane, a processing liquid supply nozzle that supplies the processing liquid to the surface of the substrate to be processed, and the holding unit are accommodated. A processing cup having an exhaust device connected to the bottom, wherein the processing cup has an outer wall that surrounds the outside of the substrate to be processed held by the holding means, and the substrate to be processed An outer peripheral portion is fixed to the inner peripheral surface of the outer wall portion of the outer cup and an outer peripheral portion of the outer cup, and a gap is provided between the outer peripheral edge of the substrate to be processed. The inner circumference is located, and An intermediate cup having a plurality of ventilation holes communicating the upper part of the outer cup and the outer side of the inner cup; an opening / closing member capable of blocking an airflow passing through the ventilation holes of the intermediate cup; and an opening / closing movement of the opening / closing member A moving mechanism, and when the processing liquid is supplied to the substrate to be processed, the opening / closing member closes the vent hole, and when forming a processing film after supplying the processing liquid, the vent hole is opened. (Claim 1). In this case, it is preferable that the vent holes are provided at equal intervals on a concentric circle.

  Further, the invention according to claim 3 is the substrate processing apparatus according to claim 1 or 2, wherein the outer cup includes an upper cup body having a movable outer wall portion constituting a part of the outer wall portion, The open / close member is a donut disk-shaped member whose outer peripheral portion is fixed to the inner peripheral surface of the movable outer wall portion of the upper cup body, and whose inner peripheral portion can contact the inner peripheral side surface from the vent hole in the intermediate cup. The opening / closing moving mechanism is formed by an elevating mechanism that moves the upper cup body up and down. In this case, as long as the inner peripheral portion of the opening / closing member can contact the inner peripheral side surface from the vent hole in the intermediate cup, the form thereof may be arbitrary. It is better to install a flexible seal member that can contact the upper surface of the cup.

  According to a fifth aspect of the present invention, in the substrate processing apparatus according to the first or second aspect, the opening / closing member connects a plurality of rod-shaped members capable of opening / closing the upper end opening of each vent hole and the rod-shaped members. And the opening / closing movement mechanism is formed by an elevating mechanism that moves the connecting member up and down. In this case, it is preferable to provide a narrow tapered surface that can be inserted into the vent hole at the lower end closing portion of the rod-like member.

  According to a seventh aspect of the present invention, in the substrate processing apparatus of the first or second aspect, the outer cup communicates with the vent hole and the outer side of the outer cup and is annular between the outer wall portion. And an opening / closing member formed by an annular member capable of opening and closing the annular intake port, and the opening / closing moving mechanism is formed by an elevating mechanism that moves the annular member up and down. It is characterized by that.

  In the present invention, the air holes may be formed in the same circular shape (Claim 8) or may be formed in the same elliptical shape (Claim 9).

  According to the present invention, when supplying the processing liquid to the substrate to be processed, the opening / closing member closes the vent hole so that the gap between the peripheral edge of the substrate to be processed and the inner peripheral portion of the intermediate cup is closed. It is possible to exhaust from only the mist, and mist can be efficiently recovered even with a small exhaust amount.

  Further, according to the present invention, when the processing film is formed, the air flow in the vicinity of the peripheral edge of the substrate to be processed is controlled by the intermediate cup by driving the opening / closing moving mechanism to move the opening / closing member to open the vent hole. The phenomenon that the processing film on the peripheral edge of the substrate to be processed rises can be suppressed.

  Therefore, according to the present invention, the uniformity of the treatment film can be achieved and mist can be prevented. Further, by efficiently pulling exhaust gas when supplying the processing liquid and forming the processing film, it becomes possible to collect mist even at a low exhaust pressure, so that the exhaust efficiency of the factory can be improved.

  DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the best embodiment of the present invention will be described in detail with reference to the accompanying drawings. Here, a case where the substrate processing apparatus according to the present invention is applied to a resist coating processing apparatus in a semiconductor wafer resist coating / development processing system will be described.

  FIG. 1 is a schematic plan view showing a semiconductor wafer resist coating / development processing system equipped with a substrate processing apparatus according to the present invention, FIG. 2 is a schematic front view of the resist coating / developing system, and FIG. FIG. 2 is a schematic rear view of a development processing system.

  As shown in FIG. 1, the resist coating / development processing system 1 carries, for example, 25 wafers W in the cassette unit from the outside to the resist coating / development processing system 1 and also transfers wafers to the cassette C. A cassette station 2 for loading and unloading W; a processing station 3 provided adjacent to the cassette station 2 and arranged in a multi-stage with various processing units for performing predetermined processing in a single-wafer type in the coating and developing process; The interface unit 4 for transferring the wafer W to and from an exposure apparatus (not shown) provided adjacent to the processing station 3 is integrally connected.

  The cassette station 2 can mount a plurality of cassettes C at a predetermined position on the cassette mounting table 5 in a row in the horizontal X direction. Further, the cassette station 2 is provided with a wafer transfer arm 7 that can move on the transfer path 6 along the X direction. The wafer transfer arm 7 is also movable in the wafer arrangement direction (Z direction; vertical direction) of the wafers W accommodated in the cassette C, and is selective to the wafers W in each cassette C arranged in the X direction. Is configured to be accessible.

  Further, the wafer transfer arm 7 is configured to be rotatable in the θ direction around the Z axis, and as will be described later, with respect to the transition device (TRS) 31 belonging to the third processing unit group G3 on the processing station 3 side. Even it is configured to be accessible.

  The processing station 3 includes, for example, five processing unit groups G1 to G5 in which a plurality of processing units are arranged in multiple stages. As shown in FIG. 1, on the front side of the processing station 3, a first processing unit group G1 and a second processing unit group G2 are sequentially arranged from the cassette station 2 side. Further, on the back side of the processing station 3, a third processing unit group G3, a fourth processing unit group G4, and a fifth processing unit group G5 are sequentially arranged from the cassette station 2 side. A first transport mechanism 110 is provided between the third processing unit group G3 and the fourth processing unit group G4. The first transport mechanism 110 is configured to selectively access the first processing unit group G1, the third processing unit group G3, and the fourth processing unit group G4 to transport the wafer W. A second transport mechanism 120 is provided between the fourth processing unit group G4 and the fifth processing unit group G5. The second transfer mechanism 120 is configured to selectively access the second processing unit group G2, the fourth processing unit group G4, and the fifth processing unit group G5 to transfer the wafer W.

  As shown in FIG. 2, the first processing unit group G1 is a liquid processing unit that supplies a predetermined processing liquid to the wafer W to perform processing, for example, a wafer W is coated with a resist solution. Resist coating units (COT) 10, 11, and 12 having a processing apparatus, ie, a resist coating processing apparatus, and a bottom coating unit that forms an antireflection film by applying an ultraviolet curable resin liquid for preventing reflection of light during exposure ( BARC) 13 and 14 are stacked in five steps from the bottom. In the second processing unit group G2, liquid processing units, for example, development processing units (DEV) 20 to 24 that perform development processing on the wafer W are stacked in five stages in order from the bottom. Further, at the bottom of the first processing unit group G1 and the second processing unit group G2, a chemical chamber (CHM) for supplying various processing liquids to the liquid processing units in the processing unit groups G1 and G2. 25 and 26 are provided, respectively.

  On the other hand, as shown in FIG. 3, the third processing unit group G3 includes, in order from the bottom, a temperature control unit (TCP) 30, a transition device (TRS) 31 for delivering the wafer W, and a highly accurate temperature. Heat treatment units (ULHP) 32 to 38 that heat-treat the wafer W under management are stacked in nine stages.

  In the fourth processing unit group G4, for example, a high-precision temperature control unit (CPL) 40, pre-baking units (PAB) 41 to 44 for heat-treating the resist-coated wafer W, and the wafer W after development processing are heat-treated. Post baking units (POST) 45 to 49 are stacked in 10 stages in order from the bottom.

  In the fifth processing unit group G5, a plurality of heat treatment units that heat-treat the wafer W, for example, high-precision temperature control units (CPL) 50 to 53, post-exposure baking units (PEB) 54 to heat-treat the exposed wafer W, 59 are stacked in 10 steps from the bottom.

  Further, as shown in FIG. 1, a plurality of processing units are arranged on the positive side in the X direction of the first transfer mechanism 110. For example, as shown in FIG. 3, the wafer W is subjected to a hydrophobic treatment. Adhesion units (AD) 80 and 81 and heating units (HP) 82 and 83 for heating the wafer W are stacked in four stages in order from the bottom. Further, as shown in FIG. 1, for example, a peripheral exposure unit (WEE) 84 that selectively exposes only the edge portion of the wafer W is disposed on the back side of the second transfer mechanism 120.

  In addition, as shown in FIG. 2, an air conditioning unit 90 for air conditioning the inside of each block is provided above the blocks of the cassette station 2, the processing station 3, and the interface unit 4. With the air conditioning unit 90, the cassette station 2, the processing station 3, and the interface unit 4 can be adjusted to a predetermined temperature and humidity. Also, as shown in FIG. 3, for example, a predetermined gas is supplied to each device in the third processing unit group G3, the fourth processing unit group G4, and the fifth processing unit group G5 in the upper part of the processing station 3. For example, gas supply units 91 that are gas supply means such as FFU (fan filter unit) to be supplied are provided. The gas supply unit 91 can blow the gas at a predetermined flow rate after removing impurities from the gas adjusted to a predetermined temperature and humidity.

  As shown in FIG. 1, the interface unit 4 includes a first interface unit 100 and a second interface unit 101 in order from the processing station 3 side. In the first interface unit 100, a wafer transfer arm 102 is disposed at a position corresponding to the fifth processing unit group G5. For example, buffer cassettes 103 (on the back side in FIG. 1) and 104 (on the front side in FIG. 1) are installed on both sides of the wafer transfer arm 102 in the X direction. The wafer transfer arm 102 can access the heat treatment apparatus and the buffer cassettes 103 and 104 in the fifth processing unit group G5. The second interface unit 101 is provided with a wafer transfer arm 106 that moves on a transfer path 105 provided in the X direction. The wafer transfer arm 106 is movable in the Z direction and rotatable in the θ direction, and can access the buffer cassette 104 and an exposure apparatus (not shown) adjacent to the second interface unit 101. . Therefore, the wafer W in the processing station 3 can be transferred to the exposure apparatus via the wafer transfer arm 102, the buffer cassette 104, and the wafer transfer arm 106, and the wafer W after the exposure processing is transferred to the wafer transfer arm 106 and the buffer. It can be transferred into the processing station 3 via the cassette 104 and the wafer transfer arm 102.

  Note that a resist coating processing apparatus 15 which is a substrate processing apparatus according to the present invention applied to the resist coating units (COT) 10, 11, and 12 is disposed in a processing container 150 capable of sealing the inside. . On one side of the processing container 150, a wafer W loading / unloading port 151 is formed on the surface facing the transfer region of the first transfer mechanism 110 serving as a wafer W transfer unit. A shutter is provided to be openable and closable.

  Next, the case where the substrate processing apparatus according to the present invention is applied to the resist coating processing apparatus 15 will be described.

<First Embodiment>
FIG. 4 is a schematic cross-sectional view showing the state of the substrate processing apparatus according to the present invention, that is, the resist coating processing apparatus 15 at the time of resist coating in the first embodiment, and FIG. 5 shows the resist film forming state after the resist solution is supplied. It is a schematic sectional drawing shown.

  The resist coating processing apparatus 15 is connected to a spin chuck 16 as a means for holding the wafer W by vacuum suction holding the wafer W horizontally on the upper surface thereof, and is connected to the spin chuck 16 via a shaft portion 16a to rotate the wafer W in a horizontal plane. For example, a rotating mechanism 16b formed by a servo motor or the like, a processing liquid supply nozzle 17 (hereinafter referred to as a coating nozzle 17) for supplying a resist liquid to the surface of the wafer W, and a rinsing liquid such as pure water on the surface of the wafer W. A rinsing nozzle (not shown) for supplying rinsing liquid, a back rinsing nozzle (not shown) for supplying rinsing liquid such as pure water to the back surface of the wafer W, and a rinsing liquid such as pure water on the back surface of the outer peripheral edge of the wafer W An edge back rinse nozzle (not shown) and a processing cup that houses the spin chuck 16 and is connected to an exhaust device such as a vacuum pump 18 at the bottom 61 It is equipped with 0, a. The rotation mechanism 16b is electrically connected to a controller 70 that is a control means, and the number of rotations of the spin chuck 16 is controlled based on a control signal from the controller 70. In addition, although not shown in the drawing, there are provided elevating pins that are, for example, three substrate support pins penetrating the spin chuck 16, and the elevating pins and substrate conveying means (not shown) are provided below the spin chuck 16. The wafer W is configured to be transferred to the spin chuck 16 by the cooperative action.

  Further, the processing cup 60 is disposed so as to surround the outer side of the spin chuck 16 and the wafer W held by the spin chuck 16.

  The processing cup 60 includes an outer cup 62 having an outer wall 62a that surrounds the outside of the wafer W held by the spin chuck 16, an inner cup 63 having an inner wall 63a positioned below the outer periphery of the wafer W, The outer peripheral portion 64 a is fixed to the inner peripheral surface of the outer wall portion 62 a of the outer cup 62, and the inner peripheral portion 64 b is positioned with a gap 65 between the outer peripheral edge of the wafer W and the outer cup 62. An intermediate cup 64 having a plurality of ventilation holes 66 communicating with the upper part and the outside of the inner cup 63; an opening / closing member 67 capable of opening and closing the ventilation holes 66 to block the airflow passing through the ventilation holes 66 of the intermediate cup 64; An elevating cylinder 68 which is an open / close moving mechanism for moving the member 67 to open / close, that is, to move up / down is provided.

  In this case, the outer cup 62 includes an upper cup body 62c having a movable outer wall 62b that constitutes a part of the outer wall 62a. The outer wall portion 62a is formed in a cylindrical shape, and a movable outer wall portion 62b that is also formed in a cylindrical shape is slidably fitted on the outer peripheral surface of the outer wall portion 62a. An elevating rod 68a of the elevating cylinder 68 is connected to a support member 69 projecting from an outer surface of the movable outer wall 62b of the upper cup body 62c, and the upper cup body 62c is connected to the outer cup 62 by driving the elevating cylinder 68. It is comprised so that it may raise / lower with respect to the outer side wall part 62a. The elevating cylinder 68 is electrically connected to the controller 70 and is configured to be driven based on a control signal from the controller 70.

  The open / close member 67 has an outer peripheral portion fixed to the inner peripheral surface of the movable outer wall portion 62b of the upper cup body 62c, and the inner peripheral portion 64b can abut on the inner peripheral side surface through the vent hole 66 in the intermediate cup 64. It is formed of a disk-shaped member (see FIG. 7). Accordingly, the opening / closing member 67 also moves up and down as the upper cup body 62c is moved up and down by driving the lifting cylinder 68, and in the lowered state, the inner peripheral portion 64b comes into contact with the upper surface of the intermediate cup 64 and the vent hole 66 of the intermediate cup 64 is reached. Is closed to block the airflow flowing through the vent 66. In this case, as shown in FIG. 8, a flexible seal member capable of contacting the upper surface of the intermediate cup 64 on the inner peripheral portion 64b of the opening / closing member 67, for example, a silicon having a flexible tongue 67a on the tip side. A rubber seal member 67b may be attached. As described above, by mounting the silicon rubber sealing member 67b having the flexible tongue 67a on the inner peripheral portion 64b of the opening / closing member 67, it is possible to prevent airflow leakage in the closed state of the vent hole 66. .

  Further, when the opening / closing member 67 is raised, the inner peripheral portion 64 b is separated from the upper surface of the intermediate cup 64, the vent hole 66 of the intermediate cup 64 is opened, and the air is exhausted through the vent hole 66.

  As shown in FIGS. 4 and 5, the intermediate cup 64 has an inner peripheral portion 64b positioned with a gap 65 between the outer peripheral edge of the wafer W and a flat surface 64c slightly higher than the wafer surface. And has a downwardly inclined surface 64d from the inner peripheral portion 64b toward the outer peripheral portion 64a. As shown in FIG. 6A, the air holes 66 provided in the intermediate cup 64 are formed in, for example, a circular shape provided at equal intervals on a concentric circle. The shape of the vent hole 66 is not necessarily circular, and may be, for example, an elliptical vent hole 66A provided at equal intervals on a concentric circle as shown in FIG. 6B. .

  In addition, a cylindrical partition wall portion 61a is provided upright on the outer peripheral side of the bottom portion 61 that connects the lower end of the outer wall portion 62a of the outer cup 62 and the lower end of the inner wall portion 63a of the inner cup 63. Yes. Above the partition wall portion 61a, a ring piece 63b having a substantially mountain-shaped cross section extending from the upper end of the inner wall portion 63a of the inner cup 63 toward the outer cup 62 side, and a hanging cylinder hanging from the peripheral portion of the ring piece 63b The piece 63c is located leaving the air passage 71. A circular plate 72 is disposed on the inner side of the lower portion of the inner cup 63, and the shaft portion 16a of the spin chuck 16 is rotatably inserted into a through hole 72a provided in the central portion of the circular plate 72. It is inserted. In addition, a plurality of exhaust ports 73 are provided at appropriate intervals in the circumferential direction on the inner side of the partition wall portion 61 a in the bottom portion 61, and an exhaust pipe 74 is connected to the exhaust port 73. The exhaust pipe 74 is provided with an on-off valve 75 and a vacuum pump 18 as an exhaust device. A drain port (not shown) is provided at a position different from the exhaust port 73 in the bottom 61 of the processing cup 60.

  The on-off valve 75 and the vacuum pump 18 are electrically connected to the controller 70, and on-off control of the on-off valve 75 and on / off control of the vacuum pump 18 are performed based on a control signal from the controller 70.

  Next, the operation mode of the resist coating apparatus 15 configured as described above will be described with reference to Table 1, FIG. 4 and FIG. First, the coating nozzle 17 is moved above the center of the wafer W, and thinner is supplied from the thinner nozzle 19 adjacent to the coating nozzle 17 to the center of the wafer W (step 1). At this time, the lifting rod 68 a is contracted by the driving of the lifting cylinder 68, the upper cup body 62 c is lowered, and the inner peripheral portion of the opening / closing member 67 contacts the upper surface of the intermediate cup 64 to close the vent hole 66. In this state, the rotation mechanism 16b is driven to rotate the wafer W by rotation (for example, 1,000 rpm) and shake the thinner (step 2). Subsequently, the wafer W is rotated at a high speed (for example, 3,000 rpm), a resist solution is supplied from the coating nozzle 17 to the center of the wafer W, and the resist solution is diffused to the outer peripheral side of the wafer W (step 3). At this time, since the vent hole 66 is closed by the opening / closing member 67, the mist generated by the scattering of the resist solution passes through the narrow gap 65 between the outer peripheral edge of the wafer W and the inner peripheral portion 64b of the intermediate cup 64. Exhausted. Therefore, mist can be efficiently recovered even with a small displacement.

  After supplying the resist solution from the coating nozzle 17 for a predetermined period (for example, 2.0 sec.), The supply of the resist solution is stopped, and the wafer W is rotated (for example, 1,500 rpm) to remove the resist solution on the wafer W from the wafer surface. A resist film is formed by spreading over. At this time, since the opening / closing member 67 opens the vent hole 66, the exhaust is exhausted through the narrow gap 65 and the vent hole 66 between the outer peripheral edge of the wafer W and the inner peripheral portion 64 b of the intermediate cup 64. Therefore, it is possible to suppress the phenomenon that the resist film rises by controlling the airflow around the outer periphery of the wafer W.

After the resist film is formed, the wafer W is decelerated to a low speed, for example, 1,000 rpm, and in this state, rinse liquid (thinner) is supplied from the back rinse nozzle and the edge back rinse nozzle to the back surface of the wafer W and the back surface of the peripheral portion. Then, the back surface and edge portion of the wafer W are cleaned (steps 5 and 6). In this state, since the vent hole 66 is open, the exhaust is exhausted through the narrow gap 65 and the vent hole 66 between the outer peripheral edge of the wafer W and the inner peripheral portion 64 b of the intermediate cup 64. After the cleaning process is performed, the wafer W is rotated at a high speed, for example, 2,000 rpm, and the resist and the rinsing liquid remaining on the wafer W are shaken off and dried (step 7). Thereafter, the rotation of the wafer W is stopped and the resist coating process is completed.

Second Embodiment
FIG. 9 is a schematic cross-sectional view showing a state of the second embodiment of the substrate processing apparatus, that is, the resist coating processing apparatus 15 according to the present invention at the time of resist coating, and FIG. 10 is after the resist solution of the resist coating processing apparatus 15 is supplied. It is a schematic sectional drawing which shows the resist film formation state.

  In the second embodiment, the open / close member 67 </ b> A includes a plurality of vertically arranged rod-like members 76 that can open and close the upper end openings of the air holes 66, and a donut circle that connects the upper ends of the rod-like members 76 to each other. This is a case where it is formed with a plate-like connecting member 77.

  In this case, the rod-shaped member 76 has a narrow taper surface 76 a that passes through a through hole 62 e provided in the inward flange portion 62 d at the upper end of the outer cup 62 and whose lower end closing portion can be inserted into the vent hole 66. Yes. Thus, by providing the narrow taper surface 76a at the lower end closing portion of the rod-like member 76, the vent hole 66 can be reliably closed by each rod-like member 76 even if there is a positional shift due to some dimensional error.

  In the second embodiment, the opening / closing movement mechanism is formed by an elevating mechanism such as an elevating cylinder 68A having an elevating rod 68a connected to a support member 69A protruding from one side of the connecting member 77 of the opening / closing member 67A. Yes.

  The raising / lowering cylinder 68A is electrically connected to the controller 70, and the opening / closing control of the vent hole 66 by the rod-like member 76 of the opening / closing member 67A is performed based on a control signal from the controller 70.

  In the second embodiment, the other parts are the same as those in the first embodiment, so the same parts are denoted by the same reference numerals and description thereof is omitted.

  Next, the operation mode of the resist coating apparatus 15 of the second embodiment will be described with reference to Table 1, FIG. 9, and FIG. First, the coating nozzle 17 is moved above the center of the wafer W, and thinner is supplied from the thinner nozzle 19 adjacent to the coating nozzle 17 to the center of the wafer W (step 1). At this time, the lifting rod 68a is contracted by the driving of the lifting cylinder 68A, and the rod-shaped member 76 is lowered to close the vent hole 66. In this state, the rotation mechanism 16b is driven to rotate the wafer W by rotation (for example, 1,000 rpm) and shake the thinner (step 2). Subsequently, the wafer W is rotated at a high speed (for example, 3,000 rpm), a resist solution is supplied from the coating nozzle 17 to the center of the wafer W, and the resist solution is diffused to the outer peripheral side of the wafer W (step 3). At this time, since the vent hole 66 is closed by the opening / closing member 67A (rod-like member 76), the mist generated by the scattering of the resist solution is narrow between the outer peripheral edge of the wafer W and the inner peripheral portion 64b of the intermediate cup 64. The air is exhausted through the gap 65. Therefore, mist can be efficiently recovered even with a small displacement.

  After supplying the resist solution from the coating nozzle 17 for a predetermined period (for example, 2.0 sec.), The supply of the resist solution is stopped, and the wafer W is rotated (for example, 1,500 rpm) to remove the resist solution on the wafer W from the wafer surface. A resist film is formed by spreading over. At this time, since the opening / closing member 67A (rod-like member 76) opens the vent hole 66, the exhaust passes through the narrow gap 65 and the vent hole 66 between the outer peripheral edge of the wafer W and the inner peripheral portion 64b of the intermediate cup 64. Exhausted. Therefore, it is possible to suppress the phenomenon that the resist film rises by controlling the airflow around the outer periphery of the wafer W.

  After the resist film is formed, the wafer W is decelerated to a low speed, for example, 1,000 rpm, and in this state, rinse liquid (thinner) is supplied from the back rinse nozzle and the edge back rinse nozzle to the back surface of the wafer W and the back surface of the peripheral portion. Then, the back surface and edge portion of the wafer W are cleaned (steps 5 and 6). In this state, since the vent hole 66 is open, the exhaust is exhausted through the narrow gap 65 and the vent hole 66 between the outer peripheral edge of the wafer W and the inner peripheral portion 64 b of the intermediate cup 64. After the cleaning process is performed, the wafer W is rotated at a high speed, for example, 2,000 rpm, and the resist and the rinsing liquid remaining on the wafer W are shaken off and dried (step 7). Thereafter, the rotation of the wafer W is stopped and the resist coating process is completed.

<Third Embodiment>
FIG. 13 is a schematic cross-sectional view showing the state of the substrate processing apparatus, that is, the resist coating processing apparatus 15 according to the present invention at the time of resist coating in the third embodiment, and FIG. 14 is after the resist solution of the resist coating processing apparatus 15 is supplied. It is a schematic sectional drawing which shows the resist film formation state.

  In the third embodiment, the opening / closing member is formed of a member that opens and closes an annular intake port 78 communicating with the vent hole 66, for example, an annular member 79.

  In this case, the outer cup 62 communicates the vent hole 66 provided in the intermediate cup 64 with the outer side of the outer cup 62, and the outer cover body 62d is provided with an annular intake port 78 between the outer wall portion 62a. Have. An annular member 79 for opening and closing an annular intake port 78 formed by the exterior cover body 62d and the outer wall portion 62a is an elevating mechanism having an elevating rod 68a connected to a support member 69B projecting on one side, for example, an elevating cylinder 68B.

  The elevating cylinder 68B is electrically connected to the controller 70, and based on a control signal from the controller 70, the open / close control of the annular intake port 78 by the annular member 79, that is, the outside air is exhausted through the vent hole 66, Control whether to shut off is performed.

  In the third embodiment, the other parts are the same as those in the first embodiment. Therefore, the same parts are denoted by the same reference numerals and description thereof is omitted.

  Next, the operation mode of the resist coating apparatus 15 of the third embodiment will be described with reference to Table 1 and FIGS. First, the coating nozzle 17 is moved above the center of the wafer W, and thinner is supplied from the thinner nozzle 19 adjacent to the coating nozzle 17 to the center of the wafer W (step 1). At this time, the elevating rod 68a is extended by driving the elevating cylinder 68B, the annular member 79 is raised, the annular intake port 78 is closed, and the airflow passing through the vent hole 66 is blocked. In this state, the rotation mechanism 16b is driven to rotate the wafer W by rotation (for example, 1,000 rpm) and shake the thinner (step 2). Subsequently, the wafer W is rotated at a high speed (for example, 3,000 rpm), a resist solution is supplied from the coating nozzle 17 to the center of the wafer W, and the resist solution is diffused to the outer peripheral side of the wafer W (step 3). At this time, since the annular member 79 closes the annular intake port 78 and the airflow flowing through the vent hole 66 is blocked, the mist generated by the dispersion of the resist solution is removed from the outer peripheral edge of the wafer W and the inner peripheral part of the intermediate cup 64. It exhausts through the narrow gap 65 between 64b. Therefore, mist can be efficiently recovered even with a small displacement.

  After supplying the resist solution from the coating nozzle 17 for a predetermined period (for example, 2.0 sec.), The supply of the resist solution is stopped, and the wafer W is rotated (for example, 1,500 rpm) to remove the resist solution on the wafer W from the wafer surface. A resist film is formed by spreading over. At this time, the annular member 79 opens the annular intake port 78 and the outside air taken in from the outside flows through the vent hole 66, so that the exhaust air is narrow between the outer peripheral edge of the wafer W and the inner peripheral portion 64 b of the intermediate cup 64. The air is exhausted through the gap 65 and the vent hole 66. Therefore, it is possible to suppress the phenomenon that the resist film rises by controlling the airflow around the outer periphery of the wafer W.

  After the resist film is formed, the wafer W is decelerated to a low speed, for example, 1,000 rpm, and in this state, rinse liquid (thinner) is supplied from the back rinse nozzle and the edge back rinse nozzle to the back surface of the wafer W and the back surface of the peripheral portion. Then, the back surface and edge portion of the wafer W are cleaned (steps 5 and 6). In this state, since the vent hole 66 is open, the exhaust is exhausted through the narrow gap 65 and the vent hole 66 between the outer peripheral edge of the wafer W and the inner peripheral portion 64 b of the intermediate cup 64. After the cleaning process is performed, the wafer W is rotated at a high speed, for example, 2,000 rpm, and the resist and the rinsing liquid remaining on the wafer W are shaken off and dried (step 7). Thereafter, the rotation of the wafer W is stopped and the resist coating process is completed.

<Experimental example>
In order to compare the resist coating apparatus (Example) configured as described above with a conventional resist coating apparatus (Comparative Example) that does not control opening / closing of the air holes 66, an experiment was performed under the same processing conditions as described above. When the relationship between the exhaust pressure and the number of recovered mists was examined, the results shown in FIG. 15 were obtained.

  As a result, according to the resist coating apparatus according to the present invention, it has been found that the mist can be recovered even at a low exhaust pressure by efficiently exhausting the resist solution.

<Processing of resist coating and development processing system>
Next, the wafer W processing process performed in the resist coating / development processing system 1 configured as described above will be briefly described. First, when a cassette C containing a plurality of unprocessed wafers W is placed on the mounting table 6, one wafer W is taken out from the cassette C, and a third processing unit group G 3 is taken by the wafer transfer arm 7. It is conveyed to the temperature control unit (TCP) 30. The wafer W transferred to the temperature control unit (TCP) 30 is adjusted to a predetermined temperature, and then transferred to the bottom coating unit (BARC) 13 by the first transfer mechanism 110 to form an antireflection film on the wafer surface. The

  The wafer W on which the antireflection film is formed is unloaded from the bottom coating unit (BARC) 13 by the first transfer mechanism 110, transferred to one of the heat treatment apparatuses 32 to 38, and subjected to heat treatment. The wafer W that has been subjected to the heat treatment is taken out from the heat treatment apparatuses 32 to 38 by the first transfer mechanism 110 that enters the housing 60 of the heat treatment apparatuses 32 to 38, and then is one of the resist coating units 10 to 12. As described above, the resist supplying process with the vent hole 66 closed (step 3), and the resist film forming process with the vent hole 66 opened (step 4). The rinsing process (steps 5 and 6) and the drying process (step 7) are performed. As a result, a resist film is formed on the wafer surface.

  The resist-processed wafer W is transferred to a pre-baking unit (PAB) 41 and subjected to heat processing. The wafer W that has been subjected to the heating process in the pre-baking unit (PAB) 41 is transferred to the peripheral exposure unit 84 by the second transfer mechanism 120, and is subjected to the peripheral exposure process, and then transferred to the high-precision temperature control unit (CPL) 53. Is done. Thereafter, the wafer W is transferred to the buffer cassette 104 by the wafer transfer body 102 of the first interface unit 100 and then transferred to an exposure apparatus (not shown) by the wafer transfer arm 106 of the second interface unit 101. The wafer W after the exposure processing is transferred to the buffer cassette 103 via the buffer cassette 104 by the wafer transfer arm 106 and the wafer transfer arm 102. Thereafter, the wafer W is transferred to, for example, a post-exposure baking unit (PEB) 54 by the wafer transfer arm 102.

  The wafer W that has been subjected to the heat treatment in the post-exposure baking unit (PEB) 54 is subjected to the high-precision temperature control unit (CPL) 51, the development processing unit (DEV) 20, and the post-baking unit (PEB) 45 by the second transport mechanism 120. Are sequentially conveyed, and predetermined processing is performed in each unit. The wafer W that has undergone the post-baking process is transferred to the transition device 31 by the first transfer mechanism 110 and then returned to the cassette C by the wafer transfer arm 7. In this way, a series of wafer processing in the resist coating / development processing system 1 is completed. In the resist coating / development processing system 1, the wafer processing as described above is continuously performed on a plurality of wafers W at the same time.

<Other embodiments>
In the above embodiment, the case where the substrate processing apparatus according to the present invention is applied to a resist coating / development processing system for a semiconductor wafer has been described. However, a substrate to be processed other than a semiconductor wafer, for example, an FPD (flat panel display) substrate, It can also be applied to mask substrates and the like.

1 is a schematic plan view showing an example of a resist coating / development processing system to which a substrate processing apparatus according to the present invention is applied. It is a schematic front view of the said resist application | coating / development processing system. It is a schematic rear view of the resist coating / developing system. It is a schematic sectional drawing which shows the state at the time of the resist application of 1st Embodiment of the substrate processing apparatus which concerns on this invention. It is a schematic sectional drawing which shows the state at the time of resist film formation of the substrate processing apparatus of 1st Embodiment. It is a top view which shows another shape of the ventilation hole of the intermediate | middle cup in this invention. It is a cross-sectional perspective view which shows a part of outer cup which has an opening-and-closing member in 1st Embodiment. It is an expanded sectional view which shows the state which mounted | wore the said opening / closing member with the seal member. It is a schematic sectional drawing which shows the state at the time of the resist application of the substrate processing apparatus of 2nd Embodiment. It is a schematic sectional drawing which shows the state at the time of resist film formation of the substrate processing apparatus of 2nd Embodiment. It is a perspective view which shows the opening / closing member in 2nd Embodiment. It is an expanded sectional view which shows the closing part of the opening / closing member of 2nd Embodiment. It is a schematic sectional drawing which shows the state at the time of the resist application of the substrate processing apparatus of 3rd Embodiment. It is a schematic sectional drawing which shows the state at the time of the resist film formation of the substrate processing apparatus of 3rd Embodiment. It is a graph which shows the relationship between the exhaust pressure in the resist coating processing apparatus based on this invention, and the conventional resist coating processing apparatus, and the collection | recovery mist number.

Explanation of symbols

W Semiconductor wafer (substrate to be processed)
15 Resist coating processing equipment (substrate processing equipment)
16 Spin chuck (holding means)
16b Rotating mechanism 17 Application nozzle (treatment liquid supply nozzle)
18 Vacuum pump (exhaust device)
60 processing cup 61 bottom 62 outer cup 62a outer wall 62b movable outer wall 62c upper cup 62d exterior cover 63 inner cup 63a inner wall 64 intermediate cup 64a outer periphery 64b inner periphery 65 gaps 66, 66A air holes 67 , 67A Open / close member 67b Seal members 68, 68A, 68B Lift cylinder (open / close moving mechanism)
70 Controller 73 Exhaust port 76 Bar member 76a Narrow taper surface 77 Connecting member 78 Annular intake port 79 Annular member (opening / closing member)

Claims (9)

A substrate processing apparatus for supplying a processing liquid to a surface of a rotating substrate to be processed and expanding the processing liquid to form a processing film,
Holding means for holding the substrate to be processed in a horizontal posture, a rotating mechanism for rotating the substrate to be processed in a horizontal plane, a processing liquid supply nozzle for supplying the processing liquid to the surface of the substrate to be processed, and the holding means And a processing cup to which an exhaust device is connected at the bottom,
The processing cup is
An outer cup having an outer wall surrounding the outside of the substrate to be processed held by the holding means;
An inner cup having an inner wall located below the outer periphery of the substrate to be processed;
The outer peripheral portion is fixed to the inner peripheral surface of the outer wall portion of the outer cup, the inner peripheral portion is positioned with a gap between the outer peripheral edge of the substrate to be processed, and the upper portion of the outer cup An intermediate cup having a plurality of ventilation holes communicating with the outside of the inner cup;
An opening and closing member capable of blocking airflow passing through the vent of the intermediate cup;
An opening and closing movement mechanism for opening and closing the opening and closing member,
When supplying the processing liquid to the substrate to be processed, the vent is closed by the opening and closing member, and when forming a processing film after supplying the processing liquid, the vent is opened.
A substrate processing apparatus. The substrate processing apparatus according to claim 1,
The substrate processing apparatus, wherein the air holes are provided at equal intervals on a concentric circle. The substrate processing apparatus according to claim 1 or 2,
The outer cup comprises an upper cup body having a movable outer wall part constituting a part of the outer wall part,
The open / close member is a donut disk-shaped member whose outer peripheral portion is fixed to the inner peripheral surface of the movable outer wall portion of the upper cup body, and whose inner peripheral portion can contact the inner peripheral side surface from the vent hole in the intermediate cup. Formed,
The opening / closing movement mechanism is formed by an elevating mechanism that moves the upper cup body up and down.
A substrate processing apparatus. The substrate processing apparatus according to claim 3, wherein
A substrate processing apparatus, wherein a flexible seal member capable of contacting the upper surface of the intermediate cup is attached to an inner peripheral portion of the opening / closing member. The substrate processing apparatus according to claim 1 or 2,
The opening / closing member includes a plurality of rod-shaped members capable of opening and closing the upper end opening of each vent hole, and a connecting member that couples the rod-shaped members to each other,
The opening / closing movement mechanism is formed by an elevating mechanism that moves the connecting member up and down.
A substrate processing apparatus. The substrate processing apparatus according to claim 5,
The rod-shaped member has a narrow tapered surface in which a lower end closing portion can be inserted into the vent hole. The substrate processing apparatus according to claim 1 or 2,
The outer cup has an exterior cover body that communicates the vent hole and the outer side of the outer cup and provides an annular air inlet between the outer wall portion,
The opening and closing member is formed of an annular member capable of opening and closing the annular intake port,
The opening / closing movement mechanism is formed by an elevating mechanism that moves the annular member up and down.
A substrate processing apparatus. The substrate processing apparatus according to any one of claims 1 to 7,
The substrate processing apparatus, wherein the air holes are formed in the same circular shape. The substrate processing apparatus according to any one of claims 1 to 7,
The substrate processing apparatus, wherein the air holes are formed in the same elliptical shape.

Images