M438786 五、新型說明： 【新型所屬之技術領域】 本創作係關於一種具應力緩衝層之厚銅陶瓷基板，尤指一種 具有一中間金屬缓衝層之厚銅陶瓷基板。 【先前技街】 近年來，由於陶瓷的優良絕緣性與散熱效率，使得以陶瓷作 為電路基板的產品與技術曰益受到重視，習知陶瓷基板上的功率 金屬與晶片製作的方法有低溫共燒多層陶瓷(L〇w_Temperature Co-fired Ceramic，LTCC)、高溫共燒多層陶瓷(High_Temperature Co_fired Ceramic ’ HTCC)、直接接合銅基板B〇nded Ceramic ’ DBC)與直接鍍銅基板(Direct Plated Ceramic，DPC)，然 而’為滿足高功率模組或高轉換效率(聚光型太陽能電池)模組等需 求，陶瓷基板上的導體厚度日益增加，以滿足產品對高導電、高 導熱、低電阻、與高可靠度等特性需求。但由於陶瓷基板與其金 屬(銅)之熱雜紐差異過大，其___躺16ppmrc， 與陶究的熱祕餘(約4h5 ppmTQ相差數倍，急細熱膨脹係 數不匹配’财可能在其生產過程或可靠制試時，因急劇的冷 熱衝擊在基板内部產生強肋應力，以導致随基板剝離損壞， 造成產品可靠度不良的問題。 先則技術如中華民國公告專利1335792號所揭露之陶竞/金屬 複合結構之製造方法’麵技板上魏—金屬界面層，並將一 銅片置於該金屬界面層上，加熱該陶曼基板、該金屬界面層以及 細片’使其接合形成強鍵結。其中該金屬界面層是藉由一熱膨 脹係數介於該陶瓷基板與該銅片之間之材料所構成，如金、鈹、 錢、始、銅、鐵、鎳、把、始、鈦、纪以及其合金所組成之群組， 藉由該金屬界面層熱膨脹係數之特性，使該陶莞基板與該銅片間 因熱應力所產生之結構破壞降低，提升該結構之強度與耐用度。 如美國公告專利5561321號所揭露之陶瓷金屬複合基板結構 與其製造方法，該複合基板包含一陶莞基板、一金屬層以及一藉 由該金屬層連接於該陶瓷基板上之銅層，該金屬層是由鎢層、鎢 銀銅合金層触銅合金料子層喊，其巾該鎢層為低熱膨脹係 數，該銀銅合金層為尚熱膨脹係數，藉由此金屬層結合該陶瓷基 板與該銅層’解決在溫度變化下銅層剥離或陶瓷基板斷裂之問題。 如美國公開專利20110079418號所揭露之陶瓷電路板之結構 與製造方法’該陶竟電路板是在陶莞基板上形成一高炼點金屬所 構成之種子層，再利用低溫生長法於該種子層上形成一銅層，該 銅層之厚度在1G微糾上，藉纟雜子層作為_絲板與該銅 層之應力緩和層，避免該陶瓷基板與該銅層經過後續製程之熱循 環時，會因為熱應力產生剝離或破損造成裝置結構的破壞。 鑑於上述先前技術的缺點’本創作之包含中間緩衝層之厚銅 陶瓷基板，係藉由一具有缓衝效果之中間金屬層，作為有效降低 陶莞基板與厚銅層之間，因膨脹;係數差異而在熱應力下產生結構 破壞之現象。 M438786 【新型内容】 #在於提供—種具有厚銅層之喊基板該厚 銅陶究基板包括-中間金屬緩衝層，藉由該金屬緩衝層之設置， 可減少熱應力造成厚基板之關離級損之現象。 為達上述目的，本創作之一種具應力緩衝層之厚銅陶竟基 板，該基板至少包含：—陶兗基板；-黏著層，該黏著層係形成 於陶瓷基板之_，—金屬緩衝層，該金屬緩衝層伽彡成於該黏 著層上’其中該金屬緩衝層之厚度為1〇至5〇微米；以及一厚鋼 層’該厚銅層係形成於該金屬緩衝層上，藉由該金屬緩衝層固定 於該陶瓷基板上。 上述之具應力緩衝層之厚銅随基板，其+雜著層材料為 欽銅層、鈦鎢銅層、或鉻鋼層。 上述之具應力緩衝層之厚銅魄基板，其中該黏著層是以藏 鍍或蒸鍍之方式形成於該陶瓷基板。 上述之具應力緩衝層之厚_絲板，其中該轉層係至少 -選自 PbO、Si02、Cao、Al2〇3、Bi2〇3、Ba〇、Sr〇、BA、Mg〇、 ΖΓ〇、私〇3、制、Cu0、C〇0、Na20、P205、Zn〇、Ge〇2 或其 組合所構成之群組之玻璃。 .上述之減力缓衝層之厚綱£絲，其巾該黏著層是以厚 膜印刷燒結之方式形成於該陶究基板pM438786 V. New description: [New technical field] This creation is about a thick copper ceramic substrate with a stress buffer layer, especially a thick copper ceramic substrate with an intermediate metal buffer layer. [Previous Technical Street] In recent years, due to the excellent insulation and heat dissipation efficiency of ceramics, the benefits of products and technologies using ceramics as circuit substrates have been paid attention to. The methods of manufacturing power metal and wafers on ceramic substrates have been co-fired at a low temperature. Multilayer ceramics (L〇w_Temperature Co-fired Ceramic, LTCC), high-temperature co-fired ceramics (HTCC), directly bonded copper substrates B〇nded Ceramic 'DBC) and Direct Plated Ceramic (DPC) However, in order to meet the needs of high-power modules or high conversion efficiency (concentrated solar cells) modules, the thickness of conductors on ceramic substrates is increasing to meet the high conductivity, high thermal conductivity, low resistance, and high reliability of products. Characteristic requirements such as degree. However, due to the excessive difference between the ceramic substrate and the metal (copper), the ___ lie 16ppmrc, and the heat secret of the ceramics (about 4h5 ppmTQ differs several times, the rapid thermal expansion coefficient does not match 'the may be in its production During the process or reliable test, strong rib stress is generated inside the substrate due to the sharp thermal shock, which leads to the peeling damage with the substrate, which causes the problem of poor product reliability. First, the technology is as disclosed in the Republic of China Announcement Patent No. 1,335,792. /Metal composite structure manufacturing method's surface-wei-metal interface layer, and a copper sheet is placed on the metal interface layer, heating the Tauman substrate, the metal interface layer and the thin piece 'to make it strong to form Bonding, wherein the metal interface layer is formed by a material having a thermal expansion coefficient between the ceramic substrate and the copper sheet, such as gold, bismuth, money, start, copper, iron, nickel, palladium, titanium, titanium The group of alloys and alloys thereof, by the characteristics of the thermal expansion coefficient of the metal interface layer, the structural damage caused by thermal stress between the ceramic substrate and the copper sheet is reduced, and the strength of the structure is improved. The ceramic metal composite substrate structure and the manufacturing method thereof disclosed in the U.S. Patent No. 5,561,321, the composite substrate comprises a ceramic substrate, a metal layer and a copper layer connected to the ceramic substrate by the metal layer. The metal layer is composed of a tungsten layer, a tungsten-silver-copper alloy layer, and a copper alloy layer, wherein the tungsten layer has a low coefficient of thermal expansion, and the silver-copper alloy layer has a thermal expansion coefficient, whereby the metal substrate is bonded to the ceramic substrate. The copper layer 'solves the problem of copper layer peeling or ceramic substrate fracture under temperature change. The structure and manufacturing method of the ceramic circuit board disclosed in the Japanese Patent Publication No. 20110079418 is formed on the ceramic board. a seed layer composed of a high-refining metal, and then a low-temperature growth method is used to form a copper layer on the seed layer, the thickness of the copper layer is slightly corrected on the 1G, and the impurity layer is used as the _ silk plate and the copper layer. The stress relaxation layer prevents the ceramic substrate and the copper layer from being damaged due to thermal stress caused by peeling or damage when subjected to thermal cycling of the subsequent process. Disadvantages of the technology 'The thick copper ceramic substrate containing the intermediate buffer layer of this creation is made by an intermediate metal layer with a buffering effect as an effective reduction between the ceramic substrate and the thick copper layer due to the expansion; The phenomenon of structural damage under thermal stress. M438786 [New content] #是提供—The kind of thick copper layer shouting substrate The thick copper ceramic substrate includes - intermediate metal buffer layer, which can be reduced by the setting of the metal buffer layer The thermal stress causes the off-level damage of the thick substrate. For the above purpose, the present invention has a thick copper ceramic substrate with a stress buffer layer, the substrate comprising at least: a ceramic substrate; an adhesive layer, the adhesive layer Forming a metal buffer layer on the ceramic substrate, the metal buffer layer is gamma formed on the adhesive layer, wherein the metal buffer layer has a thickness of 1 〇 to 5 μm; and a thick steel layer 'the thick copper A layer is formed on the metal buffer layer, and the metal buffer layer is fixed on the ceramic substrate. The thick copper with the stress buffer layer described above is a substrate, and the material of the hybrid layer is a copper layer, a titanium tungsten copper layer, or a chromium steel layer. The thick copper matte substrate having the stress buffer layer described above, wherein the adhesive layer is formed on the ceramic substrate by plating or evaporation. The above-mentioned thick buffer plate of the stress buffer layer, wherein the transfer layer is at least selected from the group consisting of PbO, SiO 2 , Cao, Al 2 〇 3, Bi 2 〇 3, Ba 〇, Sr 〇, BA, Mg 〇, ΖΓ〇, private Glass of the group consisting of 〇3, system, Cu0, C〇0, Na20, P205, Zn〇, Ge〇2 or a combination thereof. The thickening buffer layer of the above-mentioned force-relieving buffer layer, the adhesive layer of the towel is formed on the ceramic substrate by thick film printing and sintering.
Mm、力’_層之厚銅陶£絲，其+該金屬緩衝層材 料係選自金、銀、Is、鋼、把、錄、鉻或其組合。 料為燦哪板，其懈屬緩衝層材 上述之具應力緩衝層之厚銅陶竞基板，其中該 以電鑛之方郝姐_著心。 Μ疋 、上述之具應力緩衝層之厚銅随基板，其中該金屬緩衝 以厚臈印刷燒結之方式形成於該黏著層上。 上述之具應力緩衝層之厚銅陶兗基板，.其中該厚 為100至500微米。 予度 上述之具應力緩衝層之厚銅_基板，其中該厚銅層是.以電 鍍之方式形成於該緩衝層上。 為使本創作之具應力雜層之厚銅随基板之目的、特徵及 功效月b更鴨ifi ’賴由下述具體之實關，並配合所附之圖 式，對本創狀實施方式做進—步的詳細說明。 【實施方式】 請參閱第-圖，第-圖為依據本創作之具應力緩衝層之厚銅 陶莞基板第-實施例剖面示意圖，本創作之具應力缓衝層之厚銅 陶瓷基板10’其中該具應力緩衝層之厚銅陶瓷基板10至少包含一 陶究基板η、-黏著層12、-金屬緩衝層13以及一厚銅層14。 在此實施例中，首先提供該陶瓷基板u，以藏鍵的方式在該 陶瓷基板11上形成一黏著層12，該黏著層12材質為鈦銅層，利 用該黏著層12黏接該陶瓷基板11。 M438786 接續上述實施例，接下來以電鍍之方式於該黏著層12上形成 一厚度為20微米之金屬緩衝層13,該金屬緩衝層13之材質為銀， 該金屬緩衝層13藉由該黏著層12黏接該陶瓷基板11，再接續在 以電錄方式於該金屬缓衝層13上形成一厚度為280微米之厚銅層 14，而該金屬緩衝層13之材料熱膨脹係數介於該陶瓷基板u與 該各銅層14之間，且該金屬緩衝層13之楊式係數需小於該陶究 基板11與該厚銅層14，其數值為越小越好，小於lGpa甚佳。因 此當該厚銅緩衝基板10受熱產生應力變化時，該金屬緩衝層13 可作為緩解該陶竟基板11與該厚銅層.14熱應力變化之結構，減 少該陶絲板11破裂以及該厚銅層14受熱產生應力變化影響而 產生剝離基板之現象。 在上述之實施例中，雜著層U之材質可進一步替換為欽嫣 銅層、或鉻銅層’另上述該金屬緩衝層23之厚度可替換為ι〇至 50微米之間’上賴厚姆％之電鍍厚度職制者需求，替換 為100至500微米之間。 、 請參閱第二，第二圖為依據本解之具應力緩衝層之与 .基板第二實施例剖面示意圖，本創作之具應力緩衝層之房 陶瓷基板20 ’其槐具應力緩騎之厚綱板如至少包令 陶莞基板2卜-轉層22、—金屬緩衝層23以及—厚銅層^ 在此實施例中，首先提供該喊基板21，以厚膜印刷燒結 式在該陶究絲上軸—轉層Μ與-金屬緩衝層Μ，宜 該黏著層22與該金屬缕^ 錢衝層之材質分別為Pb〇與銀絶合金，燒 m438786 完後該緩衝層23藉由該黏著層22黏接於該陶瓷基板21上，且該 金屬缓衝層23之其厚度為4〇微米，再接續在以電鍍方式於該金 屬緩衝層23上形成一厚度為26〇微米之厚銅層24，而該金屬緩衝 層23之材料熱膨脹係數介於該陶瓷基板21與該厚銅層24之間， 且該金屬緩衝層23之揚絲數需小於該财基板21與該厚銅層 24 ’其數值為越小越好，小於1Gpa甚佳。目此當該後銅缓衝基板 20文熱產生應力變化時，該金屬缓衝層23可作為緩解該陶究基板 21與該厚銅層24熱應力變化之結構，減少該陶兗基板21破裂以 及該厚銅層24受熱產生應力變化影響而產生剝離基板之現象。 在上述之實施例中，該黏著層22材質可進一步替換為pb〇、Mm, force '_ layer of thick copper ceramics, the + metal buffer layer material is selected from gold, silver, Is, steel, handle, record, chromium or a combination thereof. It is expected to be a plate, which is a cushioning layer of the above-mentioned thick copper ceramic substrate with a stress buffer layer, which is the heart of the electric mine.厚, the thick copper with the stress buffer layer as described above, wherein the metal buffer is formed on the adhesive layer by thick enamel printing and sintering. The thick copper ceramic substrate having the stress buffer layer described above, wherein the thickness is 100 to 500 μm. The thick copper substrate having the stress buffer layer is formed, wherein the thick copper layer is formed on the buffer layer by electroplating. In order to make the thick copper of the stress layer of the creation with the purpose, characteristics and function of the substrate, the following is the actual implementation of the following, and with the attached drawings, the implementation of the creation - A detailed description of the steps. [Embodiment] Please refer to the first figure, the first figure is a schematic cross-sectional view of the thick copper ceramic plate with the stress buffer layer according to the present invention, and the thick copper ceramic substrate 10' with the stress buffer layer is created. The thick copper ceramic substrate 10 having the stress buffer layer comprises at least a ceramic substrate η, an adhesive layer 12, a metal buffer layer 13, and a thick copper layer 14. In this embodiment, the ceramic substrate u is first provided, and an adhesive layer 12 is formed on the ceramic substrate 11 by means of a hidden bond. The adhesive layer 12 is made of a titanium-copper layer, and the ceramic substrate is bonded by the adhesive layer 12. 11. M438786 is continued from the above embodiment, and then a metal buffer layer 13 having a thickness of 20 μm is formed on the adhesive layer 12 by electroplating. The metal buffer layer 13 is made of silver, and the metal buffer layer 13 is adhered by the adhesive layer. 12, the ceramic substrate 11 is adhered, and then a copper layer 14 having a thickness of 280 μm is formed on the metal buffer layer 13 by electro-recording, and the thermal expansion coefficient of the metal buffer layer 13 is between the ceramic substrate. Between the copper layer 14 and the copper layer 14, the metal buffer layer 13 has a Young's coefficient which is smaller than the ceramic substrate 11 and the thick copper layer 14. The smaller the value, the better, less than 1 Gpa. Therefore, when the thick copper buffer substrate 10 is subjected to stress changes due to heat, the metal buffer layer 13 can serve as a structure for relieving the thermal stress change of the ceramic substrate 11 and the thick copper layer 14. The rupture of the ceramic board 11 and the thickness are reduced. The copper layer 14 is affected by a change in stress caused by heat to cause a phenomenon in which the substrate is peeled off. In the above embodiments, the material of the hybrid layer U may be further replaced by a copper layer or a chrome-copper layer. The thickness of the metal buffer layer 23 may be replaced by ι to 50 μm. The % of plating thickness is required to be replaced by between 100 and 500 microns. Please refer to the second and second figures. FIG. 2 is a cross-sectional view of the second embodiment of the stress buffer layer according to the present solution. The ceramic substrate 20' with the stress buffer layer of the present invention has a thick stress of the cookware. For example, at least the package of the base plate 2, the transfer layer 22, the metal buffer layer 23, and the thick copper layer are provided. In this embodiment, the shouting substrate 21 is first provided, and the thick film is printed and sintered in the ceramics. The upper shaft of the wire-transfer layer and the metal buffer layer are preferably made of Pb〇 and silver as the alloy of the adhesive layer 22 and the metal layer, and the buffer layer 23 is adhered by the paste after the m438786 is finished. The layer 22 is adhered to the ceramic substrate 21, and the metal buffer layer 23 has a thickness of 4 μm, and then a thick copper layer having a thickness of 26 μm is formed on the metal buffer layer 23 by electroplating. 24, the material thermal expansion coefficient of the metal buffer layer 23 is between the ceramic substrate 21 and the thick copper layer 24, and the number of filaments of the metal buffer layer 23 needs to be smaller than the financial substrate 21 and the thick copper layer 24' The smaller the value, the better, less than 1Gpa is very good. Therefore, when the stress of the copper buffer substrate 20 is changed, the metal buffer layer 23 can serve as a structure for relieving the thermal stress change of the ceramic substrate 21 and the thick copper layer 24, and the ceramic substrate 21 is reduced. And the thick copper layer 24 is affected by the stress change caused by the heat to cause the peeling of the substrate. In the above embodiment, the material of the adhesive layer 22 can be further replaced by pb〇,
Si02、CaO、A1203、Bi2〇3、BaO、SrO、B2〇3、MgO、ZrO、Fe203、Si02, CaO, A1203, Bi2〇3, BaO, SrO, B2〇3, MgO, ZrO, Fe203,
MnO、Cu〇、〇>〇、Na2〇、p2〇5、Zn〇、响或其組合所構成之 群組之玻璃等’上述該金屬緩衝層23之厚度可替換為ig至5〇微 鲁权間’上述該厚銅層24之電鑛厚度可依使用者需求，替換為⑽ 至500微米之間。 以上所述僅為本創作之較佳實酬而已，並_以限定本創 作，申請專利·;凡其他未脫離本創作所揭示之精神下所完成 等效改變或修飾’均應包含在下述之申請專利範圍内。 M438786 【圖式簡單說明】 第一圖為本創作第一實施例之具應力緩衝層之厚銅陶瓷基板 剖面示意圖。 第二圖為本創作第二實施例之具應力緩衝層之厚銅陶瓷基板 剖面示意圖。 【主要元件符號說明】 10、20 ···具應力緩衝層之厚銅陶莞基板 1卜21 . . .·陶瓷基板 12、 22...黏著層 13、 23 ...金屬缓衝層 14、 24 ...厚銅層MnO, Cu〇, 〇>〇, Na2〇, p2〇5, Zn〇, ring, or a combination thereof, the glass of the group, etc. The thickness of the metal buffer layer 23 can be replaced by ig to 5 〇 microlu The thickness of the electric ore of the thick copper layer 24 described above can be replaced by (10) to 500 micrometers according to the user's needs. The above is only the preferred remuneration of this creation, and _ to limit the creation of this creation, to apply for a patent; any other equivalent changes or modifications made without departing from the spirit of this creation shall be included in the following Within the scope of the patent application. M438786 [Simple Description of the Drawings] The first figure is a schematic cross-sectional view of a thick copper ceramic substrate with a stress buffer layer according to the first embodiment of the present invention. The second figure is a schematic cross-sectional view of a thick copper ceramic substrate having a stress buffer layer according to a second embodiment of the present invention. [Description of main component symbols] 10, 20 ··· Thick copper-plated ceramic substrate with stress buffer layer 1 21 . . . . Ceramic substrate 12, 22...Adhesive layer 13, 23 ... Metal buffer layer 14 , 24 ... thick copper layer