CN109400178A - A kind of chip ceramic antenna and preparation method thereof - Google Patents
A kind of chip ceramic antenna and preparation method thereof Download PDFInfo
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- CN109400178A CN109400178A CN201811427474.9A CN201811427474A CN109400178A CN 109400178 A CN109400178 A CN 109400178A CN 201811427474 A CN201811427474 A CN 201811427474A CN 109400178 A CN109400178 A CN 109400178A
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- 239000000919 ceramic Substances 0.000 title claims abstract description 85
- 238000002360 preparation method Methods 0.000 title claims description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 46
- 239000002184 metal Substances 0.000 claims abstract description 46
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 30
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052802 copper Inorganic materials 0.000 claims abstract description 23
- 239000010949 copper Substances 0.000 claims abstract description 23
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 19
- 239000011651 chromium Substances 0.000 claims abstract description 19
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052709 silver Inorganic materials 0.000 claims abstract description 16
- 239000004332 silver Substances 0.000 claims abstract description 16
- 229910052742 iron Inorganic materials 0.000 claims abstract description 15
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 15
- 239000010937 tungsten Substances 0.000 claims abstract description 15
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 13
- 239000010941 cobalt Substances 0.000 claims abstract description 13
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 9
- 239000011733 molybdenum Substances 0.000 claims abstract description 9
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 9
- 238000005516 engineering process Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 64
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 31
- 238000007747 plating Methods 0.000 claims description 29
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 24
- 229910052759 nickel Inorganic materials 0.000 claims description 17
- 239000000126 substance Substances 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 15
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 11
- 229910052737 gold Inorganic materials 0.000 claims description 11
- 239000010931 gold Substances 0.000 claims description 11
- 239000000047 product Substances 0.000 claims description 9
- 239000011265 semifinished product Substances 0.000 claims description 8
- 238000005245 sintering Methods 0.000 claims description 7
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 6
- 235000015895 biscuits Nutrition 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 4
- 238000004080 punching Methods 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 4
- 238000010345 tape casting Methods 0.000 claims description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 4
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 3
- 239000005751 Copper oxide Substances 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims description 3
- CSSYLTMKCUORDA-UHFFFAOYSA-N barium(2+);oxygen(2-) Chemical compound [O-2].[Ba+2] CSSYLTMKCUORDA-UHFFFAOYSA-N 0.000 claims description 3
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims description 3
- 239000000292 calcium oxide Substances 0.000 claims description 3
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 3
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 229910000428 cobalt oxide Inorganic materials 0.000 claims description 3
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims description 3
- 229910000431 copper oxide Inorganic materials 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- 239000000395 magnesium oxide Substances 0.000 claims description 3
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 3
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical compound O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 230000007935 neutral effect Effects 0.000 claims description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims 2
- 238000010894 electron beam technology Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 229910052712 strontium Inorganic materials 0.000 claims 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims 1
- 239000007769 metal material Substances 0.000 abstract description 7
- 230000007704 transition Effects 0.000 abstract description 3
- 238000010344 co-firing Methods 0.000 abstract description 2
- 238000003466 welding Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 18
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
- C04B41/90—Coating or impregnation for obtaining at least two superposed coatings having different compositions at least one coating being a metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Details Of Aerials (AREA)
Abstract
The invention discloses a kind of chip ceramic antennas, metallic circuit is attached to the outer surface of base of ceramic and the hole site excessively of base of ceramic setting, wherein for the metallic circuit positioned at outer surface as ceramic antenna main body, the metallic circuit for being located at hole site plays conducting as circuit;Metallic circuit includes the first metallic circuit, the second metallic circuit, third metallic circuit, the 4th metallic circuit and fifth metal route;First metallic circuit is selected from tungsten resistant to high temperature, molybdenum, platinum, and third metallic circuit is selected from the high copper of conductivity, silver, chromium, iron, cobalt, and centre the second metallic circuit of setting is used for transition, and the 4th metallic circuit and fifth metal route is arranged for protecting and welding in outer layer.The present invention is by design multiple layer metal route, so that base of ceramic and metallic circuit co-firing technology had both can be used in chip ceramic antenna, to control cost, and high conductive metal material can be used, to guarantee antenna performance.
Description
Technical field
The invention belongs to the technical field of ceramic antenna, in particular to the structure design and its system of a kind of chip ceramic antenna
Preparation Method.
Background technique
For those skilled in the art, although Ceramics as the scheme of antenna base be it is very common,
Still problematic to be solved.For example, common ceramic species are very rich, people are obviously more likely to select those low in cost
The common high temperature sintering ceramics such as material, such as selective oxidation zirconium, aluminium oxide.It is being aoxidized again by suitable preparation method
Metallic circuit, main body of the metallic circuit as antenna are prepared on zirconium, aluminium oxide pedestal.In various preparation methods, cofiring is utilized
Metallic circuit is undergone high temperature sintering by technique together with ceramic matrix, is advantageously ensured that and is tied between the two with excellent interface
It closes, while can control cost again.But the sintering temperature of zirconium oxide, aluminium oxide is resistant to such high temperature often beyond 1400 DEG C
Metallic circuit material it is just significantly limited, optional metal material only has a few, such as tungsten, platinum, molybdenum etc..But at this
In a little metals, tungsten and molybdenum are limited to conductivity and are significantly less than copper, this kind of metal material for being commonly used in antenna of silver, and platinum is limited to
Cost factor is not suitable for the preparation for being directly used in antenna, it is necessary to by the improvement on optimizing structure design and preparation method come
Make up the deficiency.
In addition, the difference of the thermal expansion coefficient of the metals such as tungsten, molybdenum, platinum and copper, silver is also very big, if to mix utilization
The metals such as tungsten, molybdenum, platinum, copper, silver, it is necessary to consider the matching problem between different metal layer, otherwise be difficult to obtain interface cohesion
Excellent product.
In order to obtain the antenna product of function admirable, though select those with good electric conductivity metal material (such as
Metallic copper, silver), it is also necessary to guarantee that metal layer reaches enough thickness.And universal experience is shown, as the thickness of metal layer increases
Add, the otherness between different metal layer is more serious, is more easy to happen the separation of interlayer, cannot get excellent interface cohesion.Cause
This will also solve the problems, such as this when mixing is using different metal layer.
Summary of the invention
To solve the above problems, the present invention provides a kind of chip ceramic antenna and preparation method thereof, pass through design multilayer gold
Belong to route, so that base of ceramic and metallic circuit co-firing technology had both can be used in chip ceramic antenna, to control cost, and energy
Using high conductive metal material, to guarantee antenna performance.
Technical scheme is as follows:
A kind of chip ceramic antenna, comprising base of ceramic and metallic circuit, wherein
The material of the base of ceramic is selected from aluminium oxide, zirconium oxide, calcium oxide, magnesia, hafnium oxide, cerium oxide, oxidation
Iron, strontium oxide strontia, barium monoxide, silica, copper oxide, cobalt oxide, nickel oxide, scandium oxide, any one or a few in titanium oxide
Combination;
The metallic circuit is attached to the outer surface of the base of ceramic and the hole site excessively of base of ceramic setting,
Wherein the metallic circuit positioned at the outer surface is as ceramic antenna main body, positioned at the metal wire for crossing hole site
Play conducting as circuit in road;
The metallic circuit has multilayered structure, and according to the distance apart from base of ceramic, the multilayered structure is set gradually
For the first metallic circuit, the second metallic circuit, third metallic circuit, the 4th metallic circuit and fifth metal route;
The material of first metallic circuit is selected from one of tungsten, molybdenum, platinum or a variety of, the thickness of first metallic circuit
Degree is 0.1um-2um;
Any one or more of the material of second metallic circuit in nickel, chromium, cobalt, iron, second metal
Route with a thickness of 0.1um-2um;
The material of the third metallic circuit is preferably copper, silver, chromium, iron, any one or more in cobalt, the third
Metallic circuit with a thickness of 10um-36um;
Any one or more of the material of 4th metallic circuit in nickel, copper, silver, chromium, iron, cobalt, gold, it is described
4th metallic circuit with a thickness of 2um-6um;
The material of the fifth metal route be preferably nickel, copper, silver, chromium, iron, cobalt, gold in any one or more, institute
State fifth metal route with a thickness of 0.04um-0.1um.
Preferably, the material of first metallic circuit is tungsten.
Preferably, the material of the third metallic circuit is copper.
Preferably, any one of the material of second metallic circuit in nickel, chromium.
Preferably, the material of the 4th metal wire is nickel, and the material of the fifth metal route is gold.
The present invention also provides a kind of preparation methods of above-mentioned chip ceramic antenna, comprising the following steps:
S1) according to the material and size requirement of the base of ceramic, tape casting, punching technology and cutting technique are utilized
Prepare the biscuit of the base of ceramic;
S2) according to the material and thickness requirement of first metallic circuit, using silk-screen printing technique, in the element of S1
First metallic circuit is printed on base, is sintered, and the base of ceramic for being attached with first metallic circuit is obtained;
S3) according to the material and thickness requirement of second metallic circuit, chemical vapor deposition, magnetron sputtering, electricity are utilized
Beamlet hydatogenesis, plating, any one in chemical plating process, the first metallic circuit surface described in S2 prepares described second
Metallic circuit;
S4) according to the material of the third metallic circuit, using any one in plating, chemical plating process, in S3 institute
It states the second metallic circuit surface and prepares the third metallic circuit, control the thickness range of the third metallic circuit in 0.1um-
Between 5um, ceramic antenna semi-finished product are obtained;
S5) ceramic antenna semi-finished product described in S4 are annealed;
S6 S4 to S5) is repeated, until reaching the overall thickness requirement of the third metallic circuit;
S7) according to the material and thickness requirement of the 4th metallic circuit, using any one in plating, chemical plating process
Kind, the third metallic circuit surface described in S6 prepares the 4th metallic circuit;
S8) according to the material and thickness requirement of the fifth metal route, using any one in plating, chemical plating process
Kind, the 4th metallic circuit surface described in S7 prepares the fifth metal route, finally obtain the chip ceramic antenna at
Product.
Preferably, sintering described in the step S2 is that in air atmosphere, temperature is 800 DEG C -1700 DEG C.
Preferably, annealing described in the step S5 is in non-oxidizing atmosphere, and temperature is 200 DEG C -850 DEG C, and the time is
30min-2h。
Preferably, annealing described in the step S5 is the oxygen content in neutral atmosphere or reducing atmosphere, the atmosphere
Lower than 500ppm.
Compared with prior art, beneficial effects of the present invention are as follows:
1) by design multiple layer metal route, so that base of ceramic both can be used for chip ceramic antenna and metallic circuit is total
Firing technique, the first metallic circuit with it is ceramic co-fired, binding force is more preferable, goes back controllable costs, and can be in the first metallic circuit
On the metal material more excellent using electric conductivity, to guarantee antenna performance.
2) by design multiple layer metal route, preferably each layer of metal material be ensure that between each layer with excellent
Interface cohesion.For example, the first metallic circuit preferably can be only 4.5-4.6 with the tungsten of base of ceramic cofiring, the thermal expansion coefficient of tungsten,
The preferably high conductive copper of third metallic circuit or silver, but the thermal expansion coefficient of copper and silver is up to 18-19.5, double layer of metal line
Difference between road be it is huge, the optimization that can not be subject to simply in structure and processing procedure can be successfully applied to antenna
In product;And at the same time, the second metallic circuit has also been devised falling between in this patent, and the second metallic circuit
The thermal expansion coefficient of preferred chromium or nickel, chromium or nickel is 6.2-13, can be between the first metallic circuit and third metallic circuit
Play the role of transition zone.Due to the presence of the second metallic circuit, the interface cohesion between each layer ensure that.
3) by the thickness requirement of every layer of metallic circuit of optimization, ensuring between each layer metallic circuit and and ceramic matrix
Between interface cohesion it is excellent under the premise of, the ratio of high conductive metallic circuit is improved as far as possible, to guarantee entire
The electric conductivity of metallic circuit could obtain the expection of excellent antenna performance only so.But thus can bring new problem is,
Since the thickness requirement difference between each layer metallic circuit is excessive, this can amplify the difference between each layer metallic circuit, can also mention
The risk of high product failure.For example, the thickness requirement of third metallic circuit is significantly beyond it in the scheme that this patent provides
His metallic circuit, the present invention is by the optimization to preparation method, specifically, by once preparing relatively thin third metal wire
Then sample is put under non-oxidizing atmosphere high annealing for a period of time, so that it is guaranteed that interface cohesion, repeats the step by road
Suddenly, the method by gradually thickening is finally reached the thickness requirement of third metallic circuit.
4) the 4th metallic circuit and fifth metal route has also been devised in this patent, can play protection to third metallic circuit
Effect, avoids oxidation by air, improves the service life of antenna, on the other hand can also be convenient for welding with other elements.
Certainly, it implements any of the products of the present invention and does not necessarily require achieving all the advantages described above at the same time.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of chip ceramic antenna of the invention;
Fig. 2 is a kind of structural profile illustration of chip ceramic antenna of the invention;.
Marked in the figure: a. is positive, and the back side b., 1. via holes, 2. base of ceramic, 3. metallic circuits, 31. first metallic circuits,
32. the second metallic circuit, 33. third metallic circuits, 34. the 4th metallic circuit, 35. fifth metal route.
Specific embodiment
Present invention will be further explained below with reference to specific examples.It should be understood that these embodiments are merely to illustrate this hair
It is bright, rather than limit the scope of protection of the present invention.What those skilled in the art made according to the present invention in practical applications changes
Into and adjustment, still fall within protection scope of the present invention.
In order to better illustrate the present invention, the present invention is described in detail below with attached drawing.
A kind of chip ceramic antenna includes ceramic base referring to Fig. 1,2, and 2 and metallic circuit 3, wherein
The material of the base of ceramic 2 is selected from aluminium oxide, zirconium oxide, calcium oxide, magnesia, hafnium oxide, cerium oxide, oxidation
Iron, strontium oxide strontia, barium monoxide, silica, copper oxide, cobalt oxide, nickel oxide, scandium oxide, any one or a few in titanium oxide
Combination;Above-mentioned material is this field base of ceramic common material;
The base of ceramic includes front a and back side b, and the metallic circuit 3 is attached to the positive a of the base of ceramic 2
1 position of outer surface and via hole, wherein be located at outer surface metallic circuit layer as ceramic antenna main body, be located at hole site
Metallic circuit as circuit conducting act on;
There is the metallic circuit 3 multilayered structure to be successively nominally the first metal wire according to the distance apart from base of ceramic
Road 31, the second metallic circuit 32, third metallic circuit 33, the 4th metallic circuit 34 and fifth metal route 35;
The material of first metallic circuit 31 is required to tolerance high temperature, can be with ceramic material cofiring, first gold medal
Belong to its material of route 31 be selected from one of tungsten, molybdenum, platinum or a variety of alloys, first metallic circuit with a thickness of 0.1um-
2um;
Any one or more alloy of the material of second metallic circuit 32 in nickel, chromium, cobalt, iron, it is described
Second metallic circuit with a thickness of 0.1um-2um;
The material of the third metallic circuit 33 is preferably copper, silver, chromium, iron, the alloy of any one or more in cobalt,
The third metallic circuit with a thickness of 10um-36um;The preferably high conductive material of third metallic circuit;
Any one or more of the material of 4th metallic circuit 34 in nickel, copper, silver, chromium, iron, cobalt, gold
Alloy, the 4th metallic circuit with a thickness of 2um-6um;
The material of the fifth metal route 35 be preferably nickel, copper, silver, chromium, iron, cobalt, gold in any one or more
Alloy, the fifth metal route with a thickness of 0.04um-0.1um.
A kind of preparation method of above-mentioned chip ceramic antenna, comprising the following steps:
S1) according to the material and size requirement of the base of ceramic, tape casting, punching technology and cutting technique are utilized
Prepare the biscuit of the base of ceramic;
S2) according to the material and thickness requirement of first metallic circuit, using silk-screen printing technique, in the element of S1
First metallic circuit is printed on base, is sintered, and the base of ceramic for being attached with first metallic circuit is obtained;
S3) according to the material and thickness requirement of second metallic circuit, chemical vapor deposition, magnetron sputtering, electricity are utilized
Beamlet hydatogenesis, plating, any one in chemical plating process, the first metallic circuit surface described in S2 prepares described second
Metallic circuit;
S4) according to the material of the third metallic circuit, using any one in plating, chemical plating process, in S3 institute
It states the second metallic circuit surface and prepares the third metallic circuit, control the thickness range of the third metallic circuit in 0.1um-
Between 5um, ceramic antenna semi-finished product are obtained;
S5) ceramic antenna semi-finished product described in S4 are annealed;
S6 S4 to S5) is repeated, until reaching the overall thickness requirement of the third metallic circuit;
S7) according to the material and thickness requirement of the 4th metallic circuit, using any one in plating, chemical plating process
Kind, the third metallic circuit surface described in S6 prepares the 4th metallic circuit;
S8) according to the material and thickness requirement of the fifth metal route, using any one in plating, chemical plating process
Kind, the 4th metallic circuit surface described in S7 prepares the fifth metal route, finally obtain the chip ceramic antenna at
Product.
Embodiment 1
A kind of structure design of chip ceramic antenna includes as shown in Figure 1 and Figure 2 base of ceramic and metallic circuit:
Wherein,
The material of the base of ceramic 2 is preferably aluminium oxide;
The metallic circuit 3 is attached to 1 position of outer surface and via hole of the base of ceramic 2, wherein being located at outer surface
Metallic circuit layer as ceramic antenna main body, the metallic circuit for being located at hole site is acted on as circuit conducting;
There is the metallic circuit 3 multilayered structure to be successively nominally the first metal wire according to the distance apart from base of ceramic
Road 31, the second metallic circuit 32, third metallic circuit 33, the 4th metallic circuit 34 and fifth metal route 35;
The material of first metallic circuit 31 is preferably tungsten, and the thickness of the first metallic circuit is preferably 1.5um;
The material of second metallic circuit 32 is preferably chromium, and the thickness of the second metallic circuit is preferably 0.5um;
The material of the third metallic circuit 33 is preferably copper, and the thickness of third metallic circuit layer is preferably 18um;
The material of 4th metallic circuit 34 is preferably nickel, and the thickness of the 4th metallic circuit is preferably 6um;
The material of the fifth metal route 35 is preferably gold, and the thickness of fifth metal route is preferably 0.05um.
Embodiment 2
A method of preparing chip ceramic antenna described in embodiment 1.It specifically includes the following steps:
S1) according to the material of base of ceramic be preferably aluminium oxide and size requirement, using tape casting, punching technology and
Cutting technique prepares the biscuit of base of ceramic;
S2) be preferably according to the material of the first metallic circuit tungsten and thickness 1.5um requirement, using silk-screen printing technique,
The first metallic circuit is printed on the biscuit of the base of ceramic described in S1, and high temperature sintering, sintering temperature are carried out under air environment
1650 DEG C, soaking time 2h;
S3) be preferably according to the material of the second metallic circuit chromium and thickness 0.5um requirement, using magnetron sputtering technique,
The the first metallic circuit surface described in S2 prepares the second metallic circuit;
S4) be preferably according to the material of third metallic circuit copper and overall thickness 18um requirement, using chemical plating process,
Second metallic circuit surface described in S3 prepares third metallic circuit, controls the thickness range of third metallic circuit between 3-5um,
Obtain ceramic antenna semi-finished product;
S5 ceramic antenna semi-finished product described in S4) are put into 97mol% nitrogen: the gaseous mixture environment high temperature of 3mol% hydrogen
Annealing, wherein high temperature anneal temperature is 700 DEG C, time 2h;
S6 it) repeats S4 to S5 step totally 5 times, until reaching the requirement of the overall thickness 18um of third metallic circuit;
S7) be preferably according to the material of the 4th metallic circuit nickel and thickness 6um requirement, using chemical plating process, in S6
Third metallic circuit surface prepares the 4th metallic circuit;
It S8 is preferably) gold and the requirement of thickness 0.05um according to the material of fifth metal route, using chemical plating process,
4th metallic circuit surface described in S7 prepares fifth metal route, finally obtains the finished product of the ceramic antenna.
Comparative example
The second layer material of embodiment 1 is selected as copper, it, will be direct using techniques such as the chemical plating of this field routine, plating
Copper is plated on the first metallic circuit, and macroscopic there are laminations.Copper and tungsten, molybdenum, platinum interface cohesion are poor, and the application
Using the second metallic circuit as transition zone, the interface cohesion between each layer ensure that.
Present invention disclosed above preferred embodiment is only intended to help to illustrate the present invention.There is no detailed for preferred embodiment
All details are described, are not limited the invention to the specific embodiments described.Obviously, according to the content of this specification,
It can make many modifications and variations.These embodiments are chosen and specifically described to this specification, is in order to better explain the present invention
Principle and practical application, so that skilled artisan be enable to better understand and utilize the present invention.The present invention is only
It is limited by claims and its full scope and equivalent.
Claims (9)
1. a kind of chip ceramic antenna includes base of ceramic and metallic circuit, which is characterized in that
The material of the base of ceramic is selected from aluminium oxide, zirconium oxide, calcium oxide, magnesia, hafnium oxide, cerium oxide, iron oxide, oxygen
Change strontium, barium monoxide, silica, copper oxide, cobalt oxide, nickel oxide, scandium oxide, any one or a few the group in titanium oxide
It closes;
The metallic circuit is attached to the outer surface of the base of ceramic and the hole site excessively of base of ceramic setting, wherein
The metallic circuit positioned at the outer surface is made as ceramic antenna main body positioned at the metallic circuit for crossing hole site
Play conducting for circuit;
The metallic circuit has multilayered structure, and according to the distance apart from base of ceramic, it is that the multilayered structure, which is set gradually,
One metallic circuit, the second metallic circuit, third metallic circuit, the 4th metallic circuit and fifth metal route;
The material of first metallic circuit be selected from one of tungsten, molybdenum, platinum or a variety of, first metallic circuit with a thickness of
0.1um-2um;
Any one or more of the material of second metallic circuit in nickel, chromium, cobalt, iron, second metallic circuit
With a thickness of 0.1um-2um;
Any one or more of the material of the third metallic circuit in copper, silver, chromium, iron, cobalt, the third metal wire
Road with a thickness of 10um-36um;
Any one or more of the material of 4th metallic circuit in nickel, copper, silver, chromium, iron, cobalt, gold, the described 4th
Metallic circuit with a thickness of 2um-6um;
Any one or more of the material of the fifth metal route in nickel, copper, silver, chromium, iron, cobalt, gold, the described 5th
Metallic circuit with a thickness of 0.04um-0.1um.
2. chip ceramic antenna according to claim 1, which is characterized in that the material of first metallic circuit is tungsten.
3. chip ceramic antenna according to claim 2, which is characterized in that the material of the third metallic circuit is copper.
4. chip ceramic antenna according to claim 3, which is characterized in that the material of second metallic circuit is selected from
Any one in nickel, chromium.
5. chip ceramic antenna described in -4 any claims according to claim 1, which is characterized in that the 4th metal wire
Material be nickel, the material of the fifth metal route is gold.
6. a kind of preparation method of the chip ceramic antenna as described in claim 1-5 any claim, which is characterized in that packet
Include following steps:
S1 it) according to the material and size requirement of the base of ceramic, is prepared using tape casting, punching technology and cutting technique
The biscuit of the base of ceramic;
S2) according to the material and thickness requirement of first metallic circuit, using silk-screen printing technique, on the biscuit of S1
First metallic circuit is printed, is sintered, the base of ceramic for being attached with first metallic circuit is obtained;
S3) according to the material and thickness requirement of second metallic circuit, chemical vapor deposition, magnetron sputtering, electron beam are utilized
Hydatogenesis, plating, any one in chemical plating process, the first metallic circuit surface described in S2 prepares second metal
Route;
S4) according to the material of the third metallic circuit, using any one in plating, chemical plating process, the described in the S3
Two metallic circuit surfaces prepare the third metallic circuit, control the thickness range of the third metallic circuit in 0.1um-5um
Between, obtain ceramic antenna semi-finished product;
S5) ceramic antenna semi-finished product described in S4 are annealed;
S6 S4 to S5) is repeated, until reaching the overall thickness requirement of the third metallic circuit;
S7) according to the material and thickness requirement of the 4th metallic circuit, using any one in plating, chemical plating process,
The third metallic circuit surface described in S6 prepares the 4th metallic circuit;
S8) according to the material and thickness requirement of the fifth metal route, using any one in plating, chemical plating process,
The 4th metallic circuit surface described in S7 prepares the fifth metal route, finally obtains the finished product of the chip ceramic antenna.
7. preparation method according to claim 6, which is characterized in that sintering is in air atmosphere described in the step S2
Under, temperature is 800 DEG C -1700 DEG C.
8. preparation method according to claim 6, which is characterized in that annealing is in non-oxidizing gas described in the step S5
Atmosphere, temperature are 200 DEG C -850 DEG C, time 30min-2h.
9. preparation method according to claim 8, which is characterized in that annealing described in the step S5 be in neutral atmosphere or
Reducing atmosphere, the oxygen content in the atmosphere are lower than 500ppm.
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CN111653861A (en) * | 2019-03-04 | 2020-09-11 | 上海安费诺永亿通讯电子有限公司 | Integrated structure of antenna and communication equipment shell and preparation method |
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