CN109553401A - A kind of piece type antenna and preparation method thereof - Google Patents
A kind of piece type antenna and preparation method thereof Download PDFInfo
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- CN109553401A CN109553401A CN201811476530.8A CN201811476530A CN109553401A CN 109553401 A CN109553401 A CN 109553401A CN 201811476530 A CN201811476530 A CN 201811476530A CN 109553401 A CN109553401 A CN 109553401A
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- 238000002360 preparation method Methods 0.000 title abstract description 8
- 239000000919 ceramic Substances 0.000 claims abstract description 67
- 239000000463 material Substances 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims description 33
- 239000002184 metal Substances 0.000 claims description 33
- 235000015895 biscuits Nutrition 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 28
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 230000004913 activation Effects 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims description 8
- 238000005520 cutting process Methods 0.000 claims description 8
- 238000007731 hot pressing Methods 0.000 claims description 8
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 238000005245 sintering Methods 0.000 claims description 8
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims description 8
- 238000010345 tape casting Methods 0.000 claims description 8
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 238000010147 laser engraving Methods 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 claims description 4
- 239000011149 active material Substances 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims description 4
- 239000000292 calcium oxide Substances 0.000 claims description 4
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 4
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 4
- 239000000395 magnesium oxide Substances 0.000 claims description 4
- 238000001465 metallisation Methods 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 4
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical compound O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 3
- 239000005751 Copper oxide Substances 0.000 claims description 3
- 229910000431 copper oxide Inorganic materials 0.000 claims description 3
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 3
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 229910000428 cobalt oxide Inorganic materials 0.000 claims description 2
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 230000003746 surface roughness Effects 0.000 abstract description 5
- 239000004480 active ingredient Substances 0.000 description 3
- 239000011889 copper foil Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- RYGMFSIKBFXOCR-AHCXROLUSA-N copper-60 Chemical compound [60Cu] RYGMFSIKBFXOCR-AHCXROLUSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- 238000004870 electrical engineering Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/0036—Laser treatment
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- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/0072—Heat treatment
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- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
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- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
- C04B41/90—Coating or impregnation for obtaining at least two superposed coatings having different compositions at least one coating being a metal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
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- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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Abstract
The invention belongs to antenna technical fields, disclose a kind of piece type antenna, including base of ceramic and metallic circuit layer, and base of ceramic is multilayered structure, including at least one layer of ceramic support and at least one layer of bonding interface layer；Metallic circuit layer is one or more layers structure, invests the outer surface of the base of ceramic and crosses hole site.The invention also discloses the preparation methods of the piece type antenna.Base material of the piece type antenna using ceramics as antenna, with excellent mechanical property and heat resistance, bonding interface layer only has 1~3um, which can limit the range of surface roughness of metallic circuit lower surface, so that it is guaranteed that antenna is able to maintain excellent radio-frequency performance in high-frequency band.
Description
Technical Field
The invention belongs to the technical field of antennas, and relates to a chip antenna and a preparation method thereof.
Background
The chip antenna has wide application in the fields of electrical engineering and microelectronics. At present, the working frequency of a chip antenna is expanded to a high frequency more and more, but due to the existence of a skin effect, the antenna puts higher requirements on a surface metal layer, specifically, an interface between the surface metal layer and a lower base needs to be smooth more and more, and meanwhile, the interface bonding force needs to be ensured.
In view of the existing preparation process, the method has the following defects:
for example, the high frequency antenna is manufactured by using an FPC process, and a copper foil with low surface roughness is selected as a metal layer of the high frequency antenna. However, the copper foil with the lower surface roughness in the range of 1-3 um is extremely high in cost, and the interface bonding force with the FPC substrate is inevitably reduced to a certain degree. If the FPC is used for manufacturing an antenna, the reliability of the product is poor, most of the FPC products are only in the research stage at present, and there are few cases of large-scale application.
For example, the LDS process is adopted to prepare the antenna, the types of plastics suitable for the LDS process are limited, and after laser, the surface roughness of the plastics is difficult to reach below 3um, generally, the Ra value exceeds 5um, which determines that the technology is actually more suitable for preparing the low-frequency antenna and is not suitable for preparing the high-frequency antenna.
Disclosure of Invention
In order to solve the above technical problems, the present invention provides a patch antenna and a method for manufacturing the same, wherein the operating frequency of the patch antenna is suitable for high frequency, and particularly suitable for a frequency band with the operating frequency greater than 6 GHz.
The technical scheme of the invention is as follows:
a chip antenna comprises a ceramic base and a metal circuit layer; wherein,
the ceramic base is of a multilayer structure and comprises at least one ceramic supporting layer and at least one interface bonding layer;
the metal circuit layer is of one or more layers of structures and is attached to the outer surface of the ceramic base and the position of the through hole.
In an embodiment of the invention, the ceramic supporting layer is made of one or more of aluminum oxide, zirconium oxide, magnesium oxide, calcium oxide, strontium oxide, barium oxide, yttrium oxide, cerium oxide, scandium oxide, silicon oxide, zinc oxide, lanthanum oxide, titanium oxide, silicon carbide, aluminum nitride, or aluminum silicate.
In an embodiment of the present invention, the interface bonding layer includes a main material and an active material, the main material is one or more of alumina, zirconia, magnesia, calcium oxide, strontium oxide, barium oxide, yttrium oxide, cerium oxide, scandium oxide, silicon oxide, zinc oxide, lanthanum oxide, titanium oxide, silicon carbide, aluminum nitride, or aluminum silicate, and the active material is one or more of nickel oxide, copper oxide, chromium oxide, iron oxide, cobalt oxide, tungsten, molybdenum, or platinum.
In an embodiment of the invention, the ceramic supporting layer is made of the same material as the main body.
In an embodiment of the invention, the metal circuit layer is made of one or more of tungsten, molybdenum, platinum, copper, silver, palladium, gold, nickel, cobalt, iron, aluminum, or chromium.
In an embodiment of the present invention, the thickness of the ceramic supporting layer is 100um to 10mm, preferably 150um to 5 mm.
In an embodiment of the invention, the thickness of the interface bonding layer is 1um to 10um, preferably 1um to 3 um.
In an embodiment of the invention, the thickness of the metal circuit layer is 5um to 50 um.
The invention also discloses a preparation method of the chip antenna, which comprises the following steps:
(1) making chip ceramic bases
a. Preparing a biscuit of the ceramic support layer by using a tape casting process, and cutting the biscuit to obtain the ceramic support layer;
b. preparing an interface bonding layer biscuit by using a tape casting process, and cutting the biscuit to obtain an interface bonding layer;
c. laminating and hot-pressing at least one ceramic supporting layer biscuit and at least one interface bonding layer biscuit by utilizing a hot-pressing process to obtain a ceramic base biscuit, and sintering the ceramic base biscuit at a high temperature;
d. laser engraving the interface bonding layer on the surface of the ceramic base sintered at high temperature by using laser equipment, removing the interface bonding layer outside the area of the metal circuit layer to be arranged, and then performing high-temperature activation treatment to obtain a chip type ceramic base;
(2) metallization circuit layer
And preparing the metal circuit layer by using an electroplating and/or chemical plating process to obtain the chip antenna.
In an embodiment of the invention, the temperature range of the high-temperature sintering in the step (c) in the step (1) is 750-1700 ℃, the time is 2-12 h, and the atmosphere is air.
In an embodiment of the invention, the temperature range of the high-temperature activation treatment in the step d in the step (1) is 500-900 ℃, the time is 30 min-4 h, and the environment atmosphere is one or more of hydrogen, carbon monoxide, nitrogen, argon or helium.
Compared with the prior art, the invention has the following beneficial effects:
the antenna base material is made of ceramic, and has better mechanical property and temperature resistance than a plastic base;
the ceramic base is divided into a ceramic supporting layer and an interface bonding layer. The active ingredients are only positioned in the interface bonding layer, and except the active ingredients, the materials of the two layers are kept consistent, so that the interface bonding force between the two layers is ensured. The active ingredients can be converted into metal materials after being activated at high temperature, and after the metal circuit is prepared in the subsequent process, the interface combination between the interface combination layer and the metal circuit can be ensured, so that the excellent interface combination between each layer of the antenna is ensured;
the interface bonding layer is only 1-3 um, and the thickness can limit the surface roughness range of the lower surface of the metal circuit, so that the antenna can keep excellent radio frequency performance in a high-frequency band;
the areas needing laser engraving of the invention are the areas without arranging the metal circuit, so that the problem that the laser engraving causes overlarge roughness of the lower surface of the metal circuit in the LDS process can be avoided skillfully. The invention also prepares the interface bonding layer by a high-temperature reduction activation method with low cost, thereby ensuring the interface bonding between layers and avoiding the problem that the low-surface roughness copper foil with high cost is required to be used in the FPC process.
Drawings
Fig. 1 is a schematic structural diagram of a patch antenna according to an embodiment of the present invention.
The labels in the figure are: 1-metal circuit layer, 2-interface bonding layer, and 3-ceramic support layer.
Detailed Description
The invention will be further illustrated with reference to the following specific examples. It should be understood that these examples are only for illustrating the present invention and are not intended to limit the scope of the present invention. In practice, the invention will be understood to cover all modifications and variations of this invention provided they come within the scope of the appended claims.
For a better illustration of the invention, the following detailed description of the invention is given in conjunction with the accompanying drawings.
Example 1
The chip antenna comprises a ceramic base and a metal circuit layer 1, wherein the ceramic base is of a multilayer structure and comprises at least one ceramic supporting layer 3 and at least one interface bonding layer 2;
the metal circuit layer 1 is divided into three layers, and the materials which are optimized from bottom to top are copper, nickel and gold in sequence, wherein the thickness of copper is 18um, the thickness of nickel is 5um, and the thickness of gold is 0.05 um.
The interface bonding layer 2 has a thickness of 2um, 30 wt% nickel oxide and 70 wt% aluminum oxide.
The ceramic support layer 3 is 0.4mm thick and is alumina.
The preparation method of the chip antenna comprises the following steps:
(1) making chip ceramic bases
a. Preparing a biscuit of the ceramic supporting layer by using a tape casting process according to the thickness and size requirements of the ceramic supporting layer, and cutting the biscuit to obtain the ceramic supporting layer;
b. preparing an interface bonding layer biscuit by using a tape casting process according to the thickness and size requirements of the interface bonding layer, and cutting the biscuit to obtain the interface bonding layer;
c. according to the total thickness requirement of the ceramic base, laminating and hot-pressing at least one ceramic supporting layer biscuit and at least one interface bonding layer biscuit by utilizing a hot-pressing process to obtain a ceramic base biscuit, and sintering the ceramic base biscuit at a high temperature;
d. according to the size requirement of a metal circuit of the chip antenna, laser equipment is utilized to carry out laser engraving on an interface bonding layer on the surface of the ceramic base sintered at high temperature, the interface bonding layer outside a region where the metal circuit layer needs to be arranged is removed, and then high-temperature activation treatment is carried out to obtain the chip ceramic base;
(2) metallization circuit layer
And preparing the metal circuit layer by using an electroplating and/or chemical plating process according to the structural design and the sequence of the metal circuit to obtain the chip antenna.
Wherein, the temperature range of the high-temperature sintering in the step c in the step (1) is 1650 ℃, the time is 4 hours, and the ambient atmosphere is air.
The temperature range of the high-temperature activation treatment in the step d in the step (1) is 750 ℃, the time is 1h, and the ambient atmosphere is 5 mol% hydrogen: 15 mol% argon: 80 mol% nitrogen.
Example 2
The chip antenna comprises a ceramic base and a metal circuit layer 1, wherein the ceramic base is of a multilayer structure and comprises at least one ceramic supporting layer 3 and at least one interface bonding layer 2;
the metal circuit layer 1 is divided into three layers, and the materials optimized from bottom to top are copper, nickel and gold in sequence, wherein the thickness of copper is 12um, the thickness of nickel is 5um, and the thickness of gold is 0.05 um.
The interface bonding layer 2 has a thickness of 1um, 40 wt% copper oxide and 60 wt% aluminum oxide.
The ceramic support layer 3 is 0.5mm thick and is alumina.
The preparation method of the chip antenna comprises the following steps:
(1) making chip ceramic bases
a. Preparing a biscuit of the ceramic supporting layer by using a tape casting process according to the thickness and size requirements of the ceramic supporting layer, and cutting the biscuit to obtain the ceramic supporting layer;
b. preparing an interface bonding layer biscuit by using a tape casting process according to the thickness and size requirements of the interface bonding layer, and cutting the biscuit to obtain the interface bonding layer;
c. according to the total thickness requirement of the ceramic base, laminating and hot-pressing at least one ceramic supporting layer biscuit and at least one interface bonding layer biscuit by utilizing a hot-pressing process to obtain a ceramic base biscuit, and sintering the ceramic base biscuit at a high temperature;
d. according to the size requirement of a metal circuit of the chip antenna, laser equipment is utilized to carry out laser engraving on an interface bonding layer on the surface of the ceramic base sintered at high temperature, the interface bonding layer outside a region where the metal circuit layer needs to be arranged is removed, and then high-temperature activation treatment is carried out to obtain the chip ceramic base;
(2) metallization circuit layer
And preparing the metal circuit layer by using an electroplating and/or chemical plating process according to the structural design and the sequence of the metal circuit to obtain the chip antenna.
Wherein, the temperature range of the high-temperature sintering in the step c in the step (1) is 1625 ℃, the time is 2 hours, and the environment atmosphere is air.
The temperature range of the high-temperature activation treatment in the step d in the step (1) is 800 ℃, the time is 1h, and the ambient atmosphere is 5 mol% hydrogen: 15 mol% argon: 80 mol% nitrogen.
The preferred embodiments of the invention disclosed above are intended to be illustrative only. The preferred embodiments are not intended to be exhaustive or to limit the invention to the precise embodiments disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention. The invention is limited only by the claims and their full scope and equivalents.
Claims (11)
1. A chip antenna is characterized by comprising a ceramic base and a metal circuit layer; wherein,
the ceramic base is of a multilayer structure and comprises at least one ceramic supporting layer and at least one interface bonding layer;
the metal circuit layer is of one or more layers of structures and is attached to the outer surface of the ceramic base and the position of the through hole.
2. The patch antenna according to claim 1, wherein the ceramic supporting layer is made of one or more of alumina, zirconia, magnesia, calcium oxide, strontium oxide, barium oxide, yttrium oxide, cerium oxide, scandium oxide, silicon oxide, zinc oxide, lanthanum oxide, titanium oxide, silicon carbide, aluminum nitride, and aluminum silicate.
3. The patch antenna according to claim 2, wherein the interface bonding layer comprises a main material and an active material, the main material is one or more of alumina, zirconia, magnesia, calcium oxide, strontium oxide, barium oxide, yttrium oxide, cerium oxide, scandium oxide, silicon oxide, zinc oxide, lanthanum oxide, titanium oxide, silicon carbide, aluminum nitride or aluminum silicate, and the active material is one or more of nickel oxide, copper oxide, chromium oxide, iron oxide, cobalt oxide, tungsten, molybdenum or platinum.
4. The patch antenna according to claim 3, wherein the ceramic support layer is made of the same material as the main body.
5. The patch antenna according to claim 2, wherein the metal circuit layer is made of one or more of tungsten, molybdenum, platinum, copper, silver, palladium, gold, nickel, cobalt, iron, aluminum, or chromium.
6. The patch antenna according to claim 1, wherein the ceramic support layer has a thickness of 100um to 10mm, preferably 150um to 5 mm.
7. The chip antenna according to claim 1, wherein the thickness of the interface bonding layer is 1um to 10um, preferably 1um to 3 um.
8. The patch antenna according to claim 1, wherein the thickness of the metal circuit layer is 5um to 50 um.
9. The method for manufacturing a chip antenna according to any one of claims 1 to 8, comprising the steps of:
(1) making chip ceramic bases
a. Preparing a biscuit of the ceramic support layer by using a tape casting process, and cutting the biscuit to obtain the ceramic support layer;
b. preparing an interface bonding layer biscuit by using a tape casting process, and cutting the biscuit to obtain an interface bonding layer;
c. laminating and hot-pressing at least one ceramic supporting layer biscuit and at least one interface bonding layer biscuit by utilizing a hot-pressing process to obtain a ceramic base biscuit, and sintering the ceramic base biscuit at a high temperature;
d. laser engraving the interface bonding layer on the surface of the ceramic base sintered at high temperature by using laser equipment, removing the interface bonding layer outside the area of the metal circuit layer to be arranged, and then performing high-temperature activation treatment to obtain a chip type ceramic base;
(2) metallization circuit layer
And sequentially preparing the metal circuit layers by utilizing an electroplating and/or chemical plating process to obtain the chip antenna.
10. The method for manufacturing a chip antenna according to claim 9, wherein the temperature range of the high temperature sintering in the step (1) is 750 to 1700 ℃, the time is 2 to 12 hours, and the atmosphere is air.
11. The method for manufacturing a patch antenna according to claim 9, wherein the temperature range of the high temperature activation treatment in step d in step (1) is 500-900 ℃, the time is 30 min-4 h, and the atmosphere is one or more of hydrogen, carbon monoxide, nitrogen, argon or helium.
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| CN111805091A (en) * | 2020-06-09 | 2020-10-23 | 深圳市信维通信股份有限公司 | LAP laser etching process |
| CN113524393A (en) * | 2021-07-02 | 2021-10-22 | 红云红河烟草(集团)有限责任公司 | Ceramic blade special for filament cutter and manufacturing method |
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Application publication date: 20190402 |