JP4859288B2 - Glass composition, glass sintered body, and wiring board using the same - Google Patents

Description

【００７４】
表１の結果から明らかなように、本発明に基づき、本発明の特定のガラス組成を用いた試料Ｎｏ．１〜１１においては、ガラス転移点が５５０℃以上、開気孔率が１．０％以下、熱膨張係数が６．０〜９．０ｐｐｍ／℃、ヤング率が１００ＧＰａ以下を示し、ＧａＡｓチップを実装し、気密封止を施したパッケージを、さらにプリント基板上に実装した場合においても、温度サイクル試験を５００サイクル行った後でも、抵抗変化が見られず、また気密封止も保たれており、接続部の長期信頼性が確保されているものであった。
【００７５】
一方、本発明のガラス組成の範囲から逸脱するガラス組成物を用いた試料Ｎｏ．１２〜１５においては、熱膨張係数とヤング率を同時に所定の範囲内とすることができず、温度サイクル試験において５００サイクル以下で抵抗変化が見られ、接続部の長期信頼性が保たれないものであった。
【００７６】
【発明の効果】
以上詳述した通り、本発明のガラス焼結体は、１０００℃以下の焼成で焼結体の開気孔率を１．０％以下に低減できることから、金、銀、銅などの低抵抗金属を主成分とする導体材料を用いて配線層を形成することができ、ＧａＡｓチップの実装に適した熱膨張係数と低ヤング率特性とを同時に満足することから、接続部の長期信頼性に優れた配線基板を得ることができる。
【図面の簡単な説明】
【図１】本発明の配線基板を用いた半導体素子収納用パッケージの一例を説明するための概略断面図である。
【符号の説明】
Ａ 素子収納用パッケージ
Ｂ プリント基板
１ 絶縁基板
２ 配線層
３ ビアホール導体
４ 接続用電極
５ 半導体素子
６ ワイヤボンディング
７ キャビティ
８ 蓋体
９ 接続用電極[0001]
BACKGROUND OF THE INVENTION
TECHNICAL FIELD The present invention relates to a glass composition and a glass sintered body that are optimal for a wiring board or the like applied to a package for storing semiconductor elements, a multilayer wiring board, and the like, and to a wiring board using this as an insulating substrate. In particular, the present invention relates to an optimal wiring board for mounting a GaAs chip.
[0002]
[Prior art]
In recent years, with the advent of the advanced information era, information communication technology has been developed rapidly. As a result, the speed and size of semiconductor devices and the like have been increased, and the wiring layer also reduces the signal transmission loss. There is a demand for lower resistance.
[0003]
Conventionally, a wiring board mainly has an insulating substrate formed of, for example, alumina ceramics and a surface of the insulating substrate and / or a metallized wiring layer co-fired on the surface.
[0004]
Here, since the firing temperature of alumina ceramics is as high as about 1600 ° C., high melting point metals such as W and Mo have been used as the metallized wiring layer formed inside the insulating substrate.
[0005]
However, the alumina ceramics constituting the conventional insulating substrate as described above have a high dielectric constant, and the signal delay time becomes long, so that signals cannot be propagated at high speed. Further, since the refractory metal constituting the metallized wiring layer has a high electric resistance, similarly, it is not possible to propagate a signal at high speed.
[0006]
Therefore, it has been proposed to use glass ceramics having a low dielectric constant and a firing temperature of 1000 ° C. or lower that can be fired at a low temperature as an insulating substrate, and Cu, Ag, Au, or the like having a low electrical resistance as a conductor.
[0007]
For example, as disclosed in Japanese Patent Application Laid-Open No. 60-240135, a borosilicate glass added with a filler such as alumina, zirconia, or mullite is co-fired with a low resistance metal. In addition, JP-A-5-298919 also proposes a glass ceramic material in which mullite or cordierite is precipitated as a crystal phase.
[0008]
Also, when mounting a semiconductor chip on a wiring board (primary mounting), and further when mounting the wiring board on a printed circuit board made of organic resin such as a mother board (secondary mounting), when the power is turned ON / OFF, etc. In order to prevent the mounting part from peeling or cracking due to the thermal stress generated by the difference in thermal expansion as the temperature rises and falls, the thermal expansion coefficient of the insulating substrate It is desirable to approximate that of a printed circuit board.
[0009]
On the other hand, in the semiconductor element, a device using a GaAs chip having a higher frequency characteristic is increasing instead of the conventional Si chip.
[0010]
In particular, the GaAs chip is brittle and easily broken compared to the Si chip, and is inferior in moisture resistance, etc., and as a requirement for the wiring board, the insulating substrate has a close thermal expansion coefficient and can be hermetically sealed. Is required. Note that when the thermal expansion coefficient on the wiring board side is large, compressive stress acts on the chip, and the GaAs chip is relatively unlikely to break, so in fact, the thermal expansion coefficient of the wiring board is equivalent to that of the GaAs chip. Slightly higher is required.
[0011]
Furthermore, it is required that the insulating substrate has a small Young's modulus in order to relieve the thermal stress of the mounting portion.
[0012]
[Problems to be solved by the invention]
However, although the conventional glass ceramic can be co-fired with a low-resistance metal such as gold, silver, copper, etc., the thermal expansion coefficient is as low as 3 to 5 ppm / ° C., and the GaAs chip (thermal expansion coefficient: 6 to When mounting 7.5 ppm / ° C.) or when mounting a wiring board on a printed circuit board, the long-term reliability of the mounting part was low and was not satisfactory in practice.
[0013]
Furthermore, since conventional glass ceramics use alumina, mullite or the like having a high Young's modulus as a filler, the Young's modulus often exceeds 100 GPa, and the thermal stress of the mounting part is insufficiently relaxed, and the long period of the mounting part is long. It was a factor that lowered reliability.
[0014]
In addition, when an insulating substrate is made of a material containing an organic resin typified by a printed circuit board, the insulating substrate itself is hygroscopic, although the low resistance wiring, thermal expansion coefficient, and Young's modulus can be within the above ranges. Therefore, hermetic sealing was impossible.
[0015]
Therefore, the present invention can be co-fired with a low-resistance metal such as silver, copper, gold, etc., has a thermal expansion coefficient close to that of a GaAs chip, has a low Young's modulus, and improves the long-term reliability of the mounting part. An object is to provide a glass composition and a glass sintered body that can be hermetically sealed, and a wiring board using the sintered body as an insulating substrate.
[0016]
[Means for Solving the Problems]
The glass composition of the present invention comprises SiO₂The13~29% By weight, Al₂O₃1-30% by weight, BaO23~32% By weight, Y₂O₃1 to 20% by weight, B₂O₃0-30 wt%, ZnO 0-25 wt%, at least one selected from the group consisting of MgO, CaO and SrO is 0-20 wt%, ZrO₂, SnO₂And TiO₂0 to 10 weights of at least one selected from the group of%ofIt is characterized by being contained in proportions and having a total amount of the above components of 90% by weight or more. According to the present invention, the glass powder comprising the above composition is molded and then fired at 1000 ° C. or less, so that the open porosity of the sintered body is 1.0% or less, and the thermal expansion coefficient is close to that of a GaAs chip. And a low Young's modulus can be achieved at the same time.
[0017]
Here, in the glass composition, PbO, As₂O_ThreeThe content of each is preferably 1% by weight or less, and further R₂The content of O (R: alkali metal) is preferably 1% by weight or less.
[0018]
Further, the glass composition has a glass transition point of 550 ° C. or higher, a surface crystallized glass, and a glass powder having an average particle size of 100 μm or less is heat-treated at an arbitrary temperature of the glass transition point or higher and 1000 ° C. or lower. At least BaAl₂Si₂O₈It is desirable to precipitate a crystalline phase.
[0019]
  The glass sintered body of the present invention is made of SiO.₂The13~29% By weight, Al₂O₃1-30% by weight, BaO23~32% By weight, Y₂O₃1 to 20% by weight, B₂O₃0-30 wt%, ZnO 0-25 wt%, at least one selected from the group consisting of MgO, CaO and SrO is 0-20 wt%, ZrO₂, SnO₂And TiO₂0 to 10 weights of at least one selected from the group of%ofA major feature is that it is obtained by molding glass powder containing 90% by weight or more of the above components, after being molded, and calcined at 1000 ° C. or lower.
[0020]
Here, the glass sintered body is made of PbO, As₂O_ThreeThe content of each is preferably 1% by weight or less, and further R₂The content of O (R: alkali metal) is preferably 1% by weight or less.
[0021]
Furthermore, the glass sintered body has at least BaAl as a crystal phase.₂Si₂O₈It preferably contains a crystalline phase, has an open porosity of 1.0% or less, a thermal expansion coefficient in the temperature range of 40 to 400 ° C. of 6.0 to 9.0 ppm / ° C., and a Young's modulus of 100 GPa or less. Is desirable.
[0022]
And the wiring board of the present invention comprises a wiring layer containing a low-resistance metal disposed on the surface and / or inside of the insulating substrate, and the insulating substrate is made of the glass sintered body described above. It has a great feature of comprising. The low resistance metal is preferably gold, silver or copper.
[0023]
DETAILED DESCRIPTION OF THE INVENTION
  The glass composition of the present invention comprises SiO₂The13~29% By weight, Al₂O₃1-30% by weight, BaO23~32% By weight, Y₂O₃1 to 20% by weight, B₂O₃0-30 wt%, ZnO 0-25 wt%, at least one selected from the group consisting of MgO, CaO and SrO is 0-20 wt%, ZrO₂, SnO₂And TiO₂0 to 10 weights of at least one selected from the group of%ofAnd the total amount of the above components is 90% by weight or more, particularly 93% by weight or more, and optimally 95% by weight or more.RumoIt is.
[0024]
Furthermore, the sintered glass body of the present invention is formed by firing a glass powder made of the above glass composition and firing it at 1000 ° C. or lower.
[0025]
The reason why the content of each component in the glass composition and the glass sintered body is limited to the above range is SiO, which is an essential component.₂, Al₂O_ThreeBaO is contained in the sintered body.₂Si₂O₈Necessary for precipitating the crystal phase and necessary for enhancing the properties of the glass sintered body. If the glass phase deviates from the above range, the open porosity of the glass sintered body may be 1.0% or less. At the same time, the coefficient of thermal expansion deviates from the desired range.
[0026]
Further, among the above components, SiO₂And Al₂O_ThreeIf the content is less than each of the above ranges, the glass transition point is lowered, resulting in poor binder removal during firing. Conversely, if the content is more than each of the above ranges, the sintered body is sintered at 1000 ° C. or less. The open porosity tends to increase. Moreover, if the content of BaO is less than the above range, the open porosity of the glass sintered body greatly exceeds 1.0% by firing at 1000 ° C. or less, and conversely, if it is large, the softening point of the glass is high. It tends to decrease and the binder removal property at the time of firing worsens, and the open porosity tends to increase.
[0027]
  SiO₂, Al₂O ₃ ofA more desirable range is SiO₂Is special1529% By weight, Al₂O₃Is especially 3-25% by weight, optimally 5-20%%sois there.
[0028]
Another essential ingredient, Y₂O_ThreeIncreases the softening point of the glass and keeps the glass transition point within the range described below, and at the same time, the BaAl as a crystallization agent.₂Si₂O₈The amount of precipitation of the crystal phase is increased and at the same time the content of BaAl₂Si₂O₈It becomes possible to control the amount of precipitation of the crystal phase. Y₂O_ThreeIs a component that improves the Young's modulus of the glass, and can control the Young's modulus of the glass sintered body, which will be described later, within a desirable range according to the content, thereby improving the bending strength.
[0029]
Therefore, Y₂O_ThreeIf the content of Al is less than the above range, the BaAl₂Si₂O₈If the amount of precipitation of the crystal phase becomes insufficient and, on the contrary, more than the above range, the Young's modulus of the sintered body exceeds 100 GPa, and at the same time, the glass transition point is improved and the open porosity is reduced by firing at 1000 ° C. or lower. It becomes larger and exceeds 1.0%. Y₂O_ThreeA more desirable range is 2 to 18% by weight, most preferably 3 to 15% by weight.
[0030]
Further, at least one selected from the group consisting of MgO, CaO and SrO contained as an optional component in the glass composition and the glass sintered body, B₂O_Three, ZnO can control the softening behavior of the glass and can set the firing conditions within a desirable range, while at the same time CaAl₂Si₂O₈Crystal phase, SrAl₂Si₂O₈Especially acicular crystals such as crystal phase or its solid solution, and ZnAl₂O_FourCrystal phase, MgAl₂O_FourIt is possible to precipitate other crystalline phases such as crystalline phase or its solid solution from the glass, and it is possible to control the thermal expansion coefficient, bending strength, Young's modulus, dielectric properties, etc. of the sintered glass. is there. However, at least one selected from the group consisting of MgO, CaO and SrO, B₂O_ThreeWhen each amount of ZnO is larger than the range of each content, the glass transition point is lowered, the binder removal property during firing is deteriorated, and / or the open porosity is increased.
[0031]
B above₂O_ThreeAs a desirable range, particularly 0 to 20% by weight, optimally 0 to 14.5% by weight, and a preferable range of ZnO is particularly preferably 0 to 20% by weight, optimally 0 to 15% by weight, MgO, A desirable range of at least one selected from the group of CaO and SrO is in particular from 0 to 18% by weight, optimally from 0 to 15% by weight.
[0032]
Furthermore, ZrO₂, SnO₂And TiO₂At least one selected from the group has the effect of promoting the precipitation of the specific crystal phase described above. However, when it is more than 10% by weight, the open porosity of the sintered body increases and exceeds 1.0%. ZrO₂, SnO₂And TiO₂A desirable range of at least one selected from the group of 0 to 8% by weight, optimally 0 to 6% by weight.
[0033]
And in this invention, the said glass composition and glass sintered compact are characterized by the total amount of the said component being 90 weight% or more. In other words, when producing glass, a fining agent, an antifoaming agent or a colorant can be contained in the glass composition within a range not exceeding 10% by weight. However, if the total amount of the above components is less than 90% by weight, it is difficult to make the characteristics of the glass sintered body within a desired range. A desirable range of the total amount of the above components is 93% by weight or more, optimally 95% by weight or more. The fining agent, antifoaming agent or coloring agent is not limited to this, but for example Sb₂O_Three, Nd₂O_Three, NiO, CoO, Cr₂O_Three, MnO, La₂O_ThreeAnd at least one selected from the group of.
[0034]
Further, in the present invention, PbO and As widely used in the conventional glass in the glass composition and the glass sintered body from the viewpoint of environmental resistance.₂O_ThreeIt is desirable that the content of each be 1% by weight or less, particularly 0.1% by weight or less, and it is desirable that these components are not substantially contained except for inevitable impurities.
[0035]
Further, in the present invention, R in the glass composition and the sintered glass body in terms of chemical resistance, hygroscopicity, etc.₂The content of O (R: alkali metal of Li, Na, K, Rb) is 1% by weight or less, particularly 0.1% by weight or less, respectively, and these components are not substantially contained except for inevitable impurities. Is desirable.
[0036]
Moreover, in the glass composition of this invention, it is desirable that a glass transition point is 550 degreeC or more. When the glass transition point is lower than 550 ° C., the binder removal property is deteriorated, carbon remains in the sintered body, and the characteristics of the glass sintered body are deteriorated. Since the resistance metal cannot be sufficiently sintered and the specific resistance increases, the advantage of using the low resistance metal is lost. The desirable range of the glass transition point is particularly 580 ° C. or higher, and further 600 ° C. or higher.
[0037]
Moreover, in the glass composition of this invention, it is desirable that this glass composition is surface crystallized glass. Here, the surface crystallized glass means that the crystallization does not proceed from the bulk glass by uniform nucleation but proceeds by non-uniform nucleation from the surface or interface.
[0038]
Thus, in the glass composition, since crystallization proceeds by heterogeneous nucleation, the crystallization behavior of the glass can be controlled by the particle size of the glass powder. Since the crystallinity can be obtained, desired characteristics can be easily obtained.
[0039]
Furthermore, in the glass composition of the present invention, when a glass powder having an average particle size of 100 μm or less is heat-treated at an arbitrary temperature not lower than the glass transition point and not higher than 1000 ° C., at least BaAl₂Si₂O₈It is desirable to precipitate a crystalline phase. In the present invention, it is desirable that the Young's modulus of the glass sintered body is low, but BaAl₂Si₂O₈The crystal phase can be precipitated as acicular crystals from the glass, can increase the bending strength, and can achieve both a low Young's modulus and a high strength. Furthermore, BaAl₂Si₂O₈The thermal expansion coefficient can be controlled by the crystal phase.
[0040]
In the present invention, BaAl is used from the glass powder.₂Si₂O₈Other crystal phases other than the crystal phase may be precipitated and exist in the glass sintered body, or at least one selected from the group of the following other crystal phases may be precipitated. Examples of other crystal phases include ZnAl₂O_Four, MgAl₂O_FourAnd its solid solution, CaAl₂Si₂O₈, SrAl₂Si₂O₈And its solid solution, SiO₂YAlO_Three, Y_FourAl₂O₉, BaY₂O_Four, Ba_FourY₂O₇, BaSiO_Three, BaSi₂O_Five, Sr₂MgSi₂O₇MgSiO_Three, Mg₂SiO_Four, CaSiO_ThreeEtc.
[0041]
Further, in producing the glass sintered body of the present invention, if the firing temperature is higher than 1000 ° C., the melting point of the low resistance wiring described later is exceeded, and it becomes difficult to form a wiring layer by simultaneous firing. The firing temperature is preferably 1000 ° C. or lower, particularly 980 ° C. or lower when copper is used as the wiring, and 900 ° C. or lower, particularly 850 ° C. or lower, when gold or silver is used as the wiring layer.
[0042]
Further, the glass sintered body of the present invention includes at least BaAl than the glass.₂Si₂O₈The crystal phase is precipitated, but this BaAl₂Si₂O₈Although the thermal expansion coefficient can be controlled by the precipitation of the crystalline phase, the bending strength of the glass sintered body can be increased because it precipitates as acicular crystals from the glass.
[0043]
In the sintered glass body of the present invention, it is desirable that the open porosity is 1.0% or less. If the open porosity is less than 1.0%, the bending strength of the glass sintered body is lowered, and at the same time, when chemical treatment such as plating is performed, the chemical solution may cause traps or the like in the open pores. . A desirable range of open porosity is particularly preferably 0.5% or less.
[0044]
Furthermore, in the sintered glass body of the present invention, it is desirable that the thermal expansion coefficient in the temperature range of 40 to 400 ° C. is 6.0 to 9.0 ppm / ° C. and the Young's modulus is 100 MPa or less. When the thermal expansion coefficient deviates from the above range, when a GaAs chip is primarily mounted on a wiring board using the glass sintered body described later as an insulating substrate, the heat caused by the difference in thermal expansion coefficient The stress increases, and the long-term reliability of the primary mounting part cannot be maintained. A desirable range of the thermal expansion coefficient of the glass sintered body is 6.5 to 8.5 ppm / ° C.
[0045]
On the other hand, when the Young's modulus exceeds 100 GPa, when the GaAs chip is primarily mounted on the wiring substrate, the thermal stress caused by the difference in thermal expansion coefficient cannot be relaxed on the insulating substrate, and the primary mounting is performed. The long-term reliability of the department cannot be maintained. In addition, even when the wiring board is secondarily mounted on the printed circuit board, thermal stress caused by the difference in thermal expansion coefficient between the printed circuit board and the wiring board can be alleviated at the same time. It can be kept at the same time. The Young's modulus of the glass sintered body is particularly preferably 90 GPa or less.
[0046]
According to the present invention, it is possible to form a wiring board in which the above glass sintered body is used as an insulating board and a wiring layer is formed on the surface thereof. A description will be given based on FIG. 1 which is a schematic cross-sectional view of a package A for housing a semiconductor element in which a semiconductor element which is a preferred example of the wiring board is housed.
[0047]
According to FIG. 1, a wiring layer 2 is formed on the surface and / or inside of an insulating substrate 1 made of 1a to 1e. Moreover, according to FIG. 1, the via-hole conductor 3 which electrically connects the wiring layer 2 formed between the insulating layers 1a to 1e is formed.
[0048]
Further, a plurality of connection electrodes 4 are arranged on the lower surface of the package A, a cavity 7 is formed at the center of the upper surface of the package A, and an element 5 such as a semiconductor element is made of an adhesive such as glass or brazing material. The element 5 is electrically connected to the wiring layer 2 containing a low-resistance metal via the wire bonding 6 or the like. Further, the element 5 and the plurality of connection electrodes 4 formed on the lower surface of the insulating substrate 1 are electrically connected through the wiring layer 2 and the via-hole conductor 3.
[0049]
Further, a lid 8 made of metal, ceramic, glass, or the like is bonded to the upper surface of the package A with glass, brazing material, or the like (not shown) on the upper portion of the cavity 7 so as to be hermetically sealed. .
[0050]
At this time, it is desirable to use a material having a thermal expansion coefficient close to that of the glass sintered body of the present invention as the material of the lid 8 in order to ensure long-term reliability of hermetic sealing, for example, heat Expansion coefficient is 7 × 10^-6An Fe—Ni alloy at about / ° C. is mentioned.
[0051]
Further, the package A is placed on the printed circuit board B so that the connection electrodes 4 and 9 face each other, and is bonded by a brazing material represented by solder, a conductive adhesive, or the like (not shown), Thereby, the wiring layer (not shown) on the printed circuit board B and the element 5 are electrically connected.
[0052]
According to the present invention, the above-mentioned glass sintered body is used as the insulating substrate 1 in the wiring substrate such as a package for housing a semiconductor element, whereby the open porosity, thermal expansion coefficient of the insulating substrate 1, The Young's modulus can be set within a desired range, and the long-term reliability of the primary mounting and the secondary mounting of the package A can be enhanced at the same time, and hermetic sealing is possible.
[0053]
Moreover, in the wiring board of this invention, it is desirable that the said low resistance metal is either gold | metal | money, silver, and copper. Here, since the wiring layer 2 contains a low-resistance metal of gold, silver, or copper, particularly as a main component, the wiring layer 2 can be reduced in resistance, and in particular, the signal delay of a high-frequency signal can be reduced.
[0054]
In FIG. 1, only one element 5 is shown, but a multichip module on which a plurality of chips are mounted may be used. Further, the element 5 is connected to the wiring layer 2 through the wire bonding 6, but the present invention is not limited to this, and the wiring layer in which the element 5 is formed or exposed on the surface of the insulating substrate 1. 2 may be directly connected by solder or the like.
[0055]
Furthermore, the element 5 may be sealed using a sealing resin without using the lid 8. However, when the sealing resin is used, it is difficult to completely block the entry of moisture or the like, and therefore a sealing structure using the lid 8 is preferable.
[0056]
In addition, in order to manufacture the wiring board of the present invention such as the semiconductor element storage package A, a slurry is prepared by adding and mixing an appropriate organic binder, dispersant, and solvent to the glass powder described above. This is formed into a sheet by a conventionally known doctor blade method, calendar roll method, rolling method or press molding method.
[0057]
And after forming a through hole as needed in this sheet-like molded object, the conductor paste containing a low resistance metal is filled in a through hole. Then, an evaluation pattern is printed on the surface of the sheet-like molded body using a metal paste using a known printing method such as a screen printing method or a gravure printing method so that the thickness of the wiring layer is 5 to 30 μm. Alternatively, a metal foil is pasted and processed into a pattern or a pattern processed.
[0058]
And after aligning a plurality of sheet-like molded bodies and laminating and pressure-bonding them, after removing the binder in an oxidizing atmosphere or a low oxidizing atmosphere, in an oxidizing atmosphere or a non-oxidizing atmosphere at 1000 ° C. or lower By baking, a wiring board can be manufactured.
[0059]
The firing atmosphere is appropriately determined according to the type of low-resistance metal used. For example, when a metal that is oxidized by firing in an oxidizing atmosphere such as copper is used, firing is performed in a non-oxidizing atmosphere. Although it is necessary to carry out the firing, gold and silver can be fired in an oxidizing atmosphere.
[0060]
Then, an element such as a semiconductor element is mounted on the surface of the wiring board, and connected to the wiring layer so that signals can be transmitted. As a connection method, it is preferable to directly mount the wiring layer on the wiring layer for connection, wire bonding, flip chip, or the like.
[0061]
Further, the semiconductor element 5 can be hermetically sealed by bonding the lid 8 to the insulating substrate 2 using glass, brazing material, or the like, whereby a package for housing a semiconductor element can be manufactured. .
[0062]
【Example】
Example 1
A glass powder having an average particle size of 2 μm having the composition shown in Table 1 was prepared. In addition, PbO and As in each glass powder₂O_ThreeContent is 100 ppm or less in total, R₂The total content of O (R: alkali metal) is also 100 ppm or less.
[0063]
And after adding an organic binder, a plasticizer, and toluene to this glass powder and preparing a slurry, the green sheet of thickness 300 micrometers was produced by the doctor blade method using this slurry. Further, a plurality of the green sheets were laminated so as to have a desired thickness, and thermocompression bonded by applying a pressure of 10 MPa at a temperature of 60 ° C.
[0064]
The obtained laminate was treated to remove the binder at 500 ° C. in the air, then heated at 200 ° C./hour and fired in the air under the conditions shown in Table 1 to obtain a glass sintered body.
[0065]
About the obtained sintered compact, the differential thermal analysis measurement was performed and the glass transition point was measured. The open porosity was measured by Archimedes method. Further, Young's modulus was measured by an ultrasonic pulse method. Furthermore, the thermal expansion curve in 40 to 400 degreeC was measured, and the thermal expansion coefficient was measured. Furthermore, the crystal phases in the sintered body were identified from X-ray diffraction measurement, and are shown in Table 1 in descending order of peak intensity.
[0066]
(Example 2)
For each glass powder shown in Table 1, the above green sheet is prepared, via holes are formed at predetermined positions, and a conductive paste mainly composed of silver is filled, and then the conductive paste is used by screen printing. A wiring layer was formed on the green sheet surface. Furthermore, 5 sheets of this green sheet were laminated, thermocompression bonded by applying a pressure of 10 MPa at a temperature of 60 ° C., and cut into 15 mm □. In addition, about the sheet | seat of the uppermost layer, 10mm □ hole processing was given and it was set as the cavity.
[0067]
The obtained laminate was treated to remove the binder at 500 ° C. in the air, then heated at 200 ° C./hour, and fired in the air under the conditions shown in Table 1 to obtain a 15 mm square wiring board (for storing semiconductor elements). Package A) was produced. The pitch of the connection electrodes was 1.27 mm, and this was arranged in a matrix on the lower surface of the wiring board.
[0068]
The specific resistance of the wiring layer of the obtained sample was measured, and 4 μΩcm or less was accepted. And Au-Sn paste is apply | coated to the chip mounting part of this wiring board, and a thermal expansion coefficient is 6.8x10.^-6Four GaAs chips of 3 mm □ / ° C. were aligned and placed in a matrix, and heat-treated at 320 ° C. for 10 minutes to mount the GaAs chip on the wiring board.
[0069]
Further, an Au—Sn paste is applied to the lid connecting portion on the upper surface of the wiring board, and the thermal expansion coefficient is 7.0 × 10.^-6A lid made of Fe / Ni alloy at / ° C. was positioned and placed, and heat treatment was again performed at 320 ° C. for 10 minutes to produce an airtight sealed structure.
[0070]
Subsequently, a eutectic solder paste having a composition of 63% by weight of Pb37-Sn is printed on the surface of the connection electrode on the lower surface, and the eutectic solder paste having a composition of 63% by weight of Pb37-Sn is similarly printed on the wiring conductor of the printed circuit board. did. On top of that, after the wiring board is aligned and placed on the printed board, it is processed at 230 ° C. in a reflow furnace to melt the eutectic solder and adhere to the wiring conductor on the printed board. The substrate was mounted on a printed circuit board. In addition, the thermal expansion coefficient of the printed circuit board used here is 14 ppm / ° C.
[0071]
Next, as a thermal cycle test, these mounting structures are alternately placed in a thermostat controlled at -40 ° C. and 125 ° C. in an air atmosphere, and both are held for 15 minutes as one cycle. The temperature cycle test was conducted up to 500 cycles. And the electrical resistance between the wiring conductor of the printed circuit board B and the electrode of the wiring board 1 was measured every 50 cycles, and Table 1 shows the number of cycles until the change of the electrical resistance becomes 10% or more.
[0072]
Furthermore, as a hermetic sealing test, the package after the end of the 500 cycles is left in He gas pressurized to 4 atm for 2 hours, and then helium adsorbed on the surface in the exhaust duct is removed and then released from the cavity. The amount of He to be measured is measured using a He detector, and the detected amount of He is 5 × 10^-8atm / cc / sec. The following items were accepted (◯), and rejected items (x).
[0073]
[Table 1]

[0074]
As is apparent from the results in Table 1, based on the present invention, Sample No. using the specific glass composition of the present invention was used. 1 to 11 show a glass transition point of 550 ° C. or higher, an open porosity of 1.0% or less, a thermal expansion coefficient of 6.0 to 9.0 ppm / ° C., a Young's modulus of 100 GPa or less, and a GaAs chip mounted. Even when the package with hermetic sealing is further mounted on a printed circuit board, no resistance change is observed even after 500 cycles of the temperature cycle test, and hermetic sealing is maintained. The long-term reliability of the connecting part was ensured.
[0075]
On the other hand, sample No. using the glass composition which deviates from the range of the glass composition of the present invention. In 12 to 15, the thermal expansion coefficient and Young's modulus cannot be set within the predetermined range at the same time, resistance change is observed at 500 cycles or less in the temperature cycle test, and the long-term reliability of the connection portion cannot be maintained. Met.
[0076]
【The invention's effect】
As described above in detail, the glass sintered body of the present invention can reduce the open porosity of the sintered body to 1.0% or less by firing at 1000 ° C. or lower, so that low resistance metals such as gold, silver, and copper can be used. The wiring layer can be formed using the main conductor material, and the thermal expansion coefficient suitable for mounting GaAs chips and the low Young's modulus characteristics are satisfied at the same time. A wiring board can be obtained.
[Brief description of the drawings]
FIG. 1 is a schematic cross-sectional view for explaining an example of a package for housing a semiconductor element using a wiring board of the present invention.
[Explanation of symbols]
A Device storage package
B Printed circuit board
1 Insulating substrate
2 Wiring layer
3 Via-hole conductor
4 Connection electrodes
5 Semiconductor elements
6 Wire bonding
7 cavity
8 Lid
9 Connection electrodes

Claims (14)

The SiO ₂ 13 ~ 29 wt%, the _Al 2 _{O 3} 1 to 30% by weight, BaO of _23-32% by _weight, a Y 2 _{O 3} 1 to 20 _wt%, B 2 _{O 3} 0 to 30 wt%, ZnO 0 to 25 wt%, MgO, at least one _0-20% by _weight, at least a rate of one 0-10% by weight selected from ZrO 2, SnO ₂ and TiO ₂ groups selected from the group consisting of CaO and SrO And a total amount of the above components is 90% by weight or more. _2. The glass composition according to claim 1, wherein the contents of PbO and As ₂ O ₃ are each 1% by weight or less. R 2 _{O (R:} alkali metal) according to claim 1 or claim 2 Symbol placement glass composition content is equal to or less than 1% by weight of.   The glass composition according to any one of claims 1 to 3, wherein the glass transition point is 550 ° C or higher.   The glass composition according to any one of claims 1 to 4, which is a surface crystallized glass. When the average particle diameter 100μm or less of the glass powder was heat-treated at any temperature 1000 ° C. or less than the glass transition point, claims 1 to 5, characterized in that to deposit at least BaAl ₂ Si ₂ O ₈ crystal phase The glass composition in any one of these. The SiO ₂ 13 ~ 29 wt%, the _Al 2 _{O 3} 1 to 30% by weight, BaO of _23-32% by _weight, a Y 2 _{O 3} 1 to 20 _wt%, B 2 _{O 3} 0 to 30 wt%, ZnO 0 to 25 wt%, MgO, at least one _0-20% by _weight, at least a rate of one 0-10% by weight selected from ZrO 2, SnO ₂ and TiO ₂ groups selected from the group consisting of CaO and SrO A glass sintered body characterized in that it is obtained by molding glass powder containing 90% by weight or more and calcining at 1000 ° C. or lower. The glass sintered body according to claim 7, wherein the contents of PbO and As ₂ O ₃ are each 1% by weight or less. R 2 _{O (R:} alkali metal) according to claim 7 or claim 8 Symbol mounting glass sintered body of content is equal to or less than 1% by weight of. At least BaAl ₂ Si ₂ O ₈ glass sintered body according to any one of claims 7 to 9, characterized in that it contains a crystalline phase.   The glass sintered body according to any one of claims 7 to 10, wherein an open porosity is 1.0% or less.   The glass according to any one of claims 7 to 11, wherein a coefficient of thermal expansion in a temperature range of 40 to 400 ° C is 6.0 to 9.0 ppm / ° C, and a Young's modulus is 100 GPa or less. Sintered body.   The glass substrate according to any one of claims 7 to 12, wherein the insulating substrate comprises a wiring layer containing a low-resistance metal disposed on and / or inside the insulating substrate. A wiring board comprising a body.   The wiring board according to claim 13, wherein the low-resistance metal is any one of gold, silver, and copper.

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