JP2005101095A - Porcelain composition, porcelain, and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a porcelain insulating layer used for a high-frequency wiring board which is burned at a temperature of 800 to 1,000°C and capable of reducing a dielectric loss in a high-frequency range, and to provide its manufacturing method and a porcelain composition. <P>SOLUTION: The porcelain composition comprises 40 to 70 mass.% crystalline glass powder which is capable of separating out a diopside oxide crystal phase as a main crystal and composed of SiO<SB>2</SB>, MgO, CaO, and Al<SB>2</SB>O<SB>3</SB>whose content is 0.4 mass.% or below, and 30 to 60 mass% metal oxide powder containing 1 to 60 mass% Al<SB>2</SB>O<SB>3</SB>as a filler. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a wiring substrate applied to a package for housing a semiconductor element, a multilayer wiring substrate, and the like, and in particular, a composition for porcelain used as an insulating substrate in a wiring substrate used in a high frequency band such as a microwave or a millimeter wave. The present invention relates to an object, a porcelain, and a method for producing the porcelain.

Conventionally, a ceramic multilayer wiring board is most widely used in which a wiring layer made of a refractory metal such as tungsten or molybdenum is formed on or inside an insulating substrate made of an alumina sintered body.
In recent years, with the advent of advanced information technology, the frequency band used is increasingly shifting to higher frequencies. In such a high-frequency wiring board that requires transmission of a high-frequency signal, the resistance of the conductor forming the wiring layer is small in order to transmit the high-frequency signal without loss, and the dielectric in the high-frequency region of the insulating substrate. Small loss is required.
However, conventional refractory metals such as tungsten (W) and molybdenum (Mo) have high conductor resistance, slow signal propagation speed, and signal propagation in a high frequency region of 1 GHz or more is difficult. It is necessary to use low resistance metals such as copper, silver, and gold instead of metals such as Mo.

Since the wiring layer made of such a low-resistance metal has a low melting point and cannot be co-fired with alumina, recently, so-called glass ceramics made of glass or a composite material of glass and ceramics is insulated. A wiring substrate used as a substrate is being developed. For example, a multilayer wiring board in which a borosilicate glass added with a filler such as Al ₂ O ₃ , zirconia, and mullite is simultaneously fired with a low-resistance metal has been proposed (see Patent Document 1).

Further, for example, a ceramic is proposed in which 0 to 30% ceramic powder such as alumina and mullite is added to 70 to 100% glass powder capable of precipitating a diopside crystal phase, mixed and fired, and a frequency of 2 GHz. It is disclosed that the dielectric loss can be reduced to 3-7 × 10 ⁻⁴ (see Patent Documents 2 and 3).

JP-A-60-240135 JP-A-10-120436 JP 11-49531 A

However, the diopside oxide crystal phases of MgCaSi ₂ O ₆ and Ca (Mg, Al) (Si, Al) ₂ O ₆ are crystals with low dielectric loss in the high frequency band, but are easily crystallized on the surface. It is known that glass remains in the raw material particles, and it is difficult to increase the proportion of diopside crystal phase in the porcelain at a firing temperature around 850 ° C., which is optimal for simultaneous firing with Ag. ing.
Accordingly, the present invention provides a porcelain capable of increasing the crystallinity of the porcelain even at a firing temperature of around 850 ° C. and further reducing the dielectric loss in the high frequency region, a method for producing the same, and a composition for porcelain capable of producing the same. With the goal.

As a result of earnest examination of the above problems, the present inventor has made SiO ₂ , MgO and CaO, or SiO ₂ , MgO, CaO and Al ₂ O _{3 with a} content of 0.4% by mass or less, and has diop as the main crystal. In a glass capable of precipitating a side-type oxide crystal phase, by mixing at least Al ₂ O ₃ as a filler in a predetermined ratio, a diopside type in a porcelain during sintering even at a low temperature around 850 ° C. The present invention has been completed by finding that the precipitation ratio of the oxide crystal phase can be increased and the residual amount of glass that causes an increase in dielectric loss can be reduced.
As a result, the dielectric loss in the high frequency region can be significantly reduced.

That is, the present invention provides a crystalline glass powder comprising SiO ₂ , MgO, CaO and Al ₂ O ₃ having a content of 0.4% by mass or less and capable of precipitating a diopside oxide crystal phase as a main crystal. It is an invention relating to a composition for porcelain comprising 40 to 70% by mass, and a metal oxide powder containing at least ₁ to 60% by mass of Al ₂ O ₃ as a filler in a proportion of 30 to 60% by mass. .
In the porcelain composition of the present invention, (1) the crystalline glass powder is SiO ₂ 40 to 65 mass%, MgO 11 to 30 mass%, CaO 20 to 35 mass%, and Al ₂ O _{3 0 to} 0.4. (2) In addition to Al ₂ O ₃ , MgAl ₂ O ₄ , ZnAl ₂ O ₄ , 3Al ₂ O ₃ .2SiO ₂ , Mg ₂ Al ₄ Si ₅ O ₁₈ , SiO ₂ , TiO ₂ as the filler MgTiO ₃ , SrTiO ₃ , BaTiO ₃ , CaTiO ₃ , Zn ₂ TiO ₄ , CuO, and Cu ₂ O at least one kind (3) the softening point and the crystallization temperature of the crystalline glass powder, It is desirable that it is 830 degrees C or less and 870 degrees C or less.

The present invention also includes a phase comprising at least SiO ₂ , MgO, CaO and Al ₂ O ₃ having a content of 0.4% by mass or less, the main crystal being a diopside oxide crystal, and at least Al as a filler. _The invention relates to a porcelain containing ₂ O ₃ and having a dielectric loss of 60 × 10 ⁻⁴ or less at 60 to 77 GHz.
In the porcelain of the present invention, (1) a residual glass which is fired at a firing temperature of 850 ° C. or higher and contained in a phase composed of SiO ₂ , MgO, CaO and Al ₂ O ₃ having a content of 0.4 mass% or less. The proportion of the phase is 12% by mass or less. (2) The thermal expansion coefficient from room temperature to 400 ° C. is preferably 5 × 10 ⁻⁶ / ° C. or more, the dielectric constant is 12 or less, and the ceramic strength is 250 MPa or more.

Further, the present invention is a crystallized glass powder 40 comprising SiO ₂ , MgO, CaO and Al ₂ O ₃ having a content of 0.4% by mass or less and capable of depositing a diopside oxide crystal phase as a main crystal. and 70 wt%, after molding at least _Al 2 _{O 3} and composed of a metal oxide 30 to 60% by weight, containing 1 to 60 wt% mixture as a filler, and fired at a temperature of 800 to 1000 ° C., SiO ₂ , the production of porcelain, wherein the MgO and CaO, or SiO _2, MgO, diopside-type oxide containing CaO and Al ₂ O ₃ crystalline phase, to produce a ceramic containing at least _Al 2 _{O 3} The invention relates to a method.
Further in the production method of the ceramic according to the present invention, the crystallized glass powder, and SiO ₂ 40 to 65 wt%, and MgO11~30 mass%, and CaO20~35 mass%, Al ₂ O ₃ 0 to 0.4 It is desirable to consist of mass%.

According to the porcelain composition of the present invention, since it can be fired at a low temperature of 1000 ° C. or less, a wiring layer made of a low resistance metal such as copper can be formed, and the dielectric loss at 60 to 77 GHz is 20 × 10 ⁻⁴ or less. Since the dielectric loss is low, a high-frequency signal can be transmitted very well without loss in a high-frequency region of 1 GHz or higher.
Moreover, the porcelain obtained using this composition has a high porcelain strength of 250 MPa or more, a dielectric constant of 12 or less, and can be controlled to have a thermal expansion characteristic similar to that of a GaAs chip or printed circuit board. In addition to having excellent characteristics as a substrate, it has excellent heat cycle characteristics when mounted with a GaAs chip or when mounted with a brazing material on a motherboard such as a printed circuit board having an insulating substrate containing an organic resin. Can provide a highly reliable mounting structure.

The porcelain composition of the present invention comprises SiO ₂ , MgO, CaO and Al ₂ O ₃ having a content of 0.4% by mass or less, and has crystallinity capable of precipitating a diopside oxide crystal phase as a main crystal. It contains 40 to 70% by mass of glass powder and ₁ to 60% by mass of at least Al ₂ O ₃ as a filler.
The reason why each component composition is limited to the above range is that when the crystalline glass powder is less than 40% by mass, it is difficult to densify the porcelain by firing at a temperature of 1000 ° C. or less, and 70% by mass. This is because the content of diopside in the porcelain decreases and the strength of the porcelain becomes weak.
A particularly desirable range of the crystalline glass powder is 50 to 65% by mass, and more particularly 55 to 60% by mass.

Here, the composition of the crystalline glass powder is a ratio of SiO ₂ 40 to 65 mass%, MgO 11 to 30 mass%, CaO 20 to 35 mass%, and Al ₂ O _{3 0 to} 0.4 mass%. desirable.
In general, the glass capable of precipitating the diopside-type oxide crystal phase is usually one in which only the surface of the glass raw material particles is crystallized, and a glass phase having a large dielectric loss tends to remain in the center.
However, according to the present invention, by making Al ₂ O ₃ in the glass component 0.4 mass% or less, the precipitation ratio of the diopside oxide crystal phase in the porcelain can be increased, In particular, the dielectric loss in a high frequency region of 1 GHz or more, further 20 GHz or more, further 50 GHz or more, and also 70 GHz or more can be greatly reduced.

It is important that the content of Al ₂ O ₃ blended as a filler in the porcelain composition is 1 to 60% by mass. That is, when the content of Al ₂ O ₃ is less than 1% by mass, the Young's modulus in the porcelain is lowered and the porcelain strength is weakened. Conversely, the content of Al ₂ O ₃ is 60% by mass. This is because it is difficult to sinter and cannot be densified at a firing temperature of 1000 ° C. or less. A desirable range of Al ₂ O ₃ as the filler is 30 to 60% by mass, and a particularly desirable range is 30 to 40% by mass. If the filler amount is less than 30% by mass, the porcelain strength is lowered, while if it exceeds 60% by mass, it becomes difficult to densify the porcelain.
Further, as filler in the composition, _Al 2 _{O 3} is, _α-Al 2 _{O 3,} and _γ-Al 2 _{O 3} are possible using, _α-Al 2 _{O 3} in terms of particular enhance crystallinity Is preferred. Metal oxides other than Al ₂ O ₃ include MgAl ₂ O ₄ , ZnAl ₂ O ₄ , 3Al ₂ O ₃ .2SiO ₂ , Mg ₂ Al ₄ Si ₅ O ₁₈ , SiO ₂ , TiO ₂ , MgTiO ₃ , SrTiO _3. , BaTiO ₃ , CaTiO ₃ , Zn ₂ TiO ₄ , CuO, Cu ₂ O and the like are preferable, among which γ-Al ₂ O ₃ , β-Al ₂ O ₃ , MgAl ₂ O ₄ , ZnAl ₂ O ₄ , MgTiO ₃ and CaTiO ₃ are desirable.
The porcelain composition of the above aspect can be densified to a relative density of preferably 97% or more, particularly preferably 99% or more by firing in a temperature range of 800 to 1000 ° C.
The softening point of the crystalline glass powder used in the resin composition of the present invention is desirably 830 ° C. or less, particularly 750 to 830 ° C., in order to enable sintering at around 850 ° C., and the crystallization temperature is 870. It is desirable that the temperature is not higher than ° C.

The porcelain of the present invention is a diopside containing at least the α-Al ₂ O ₃ phase, at least SiO ₂ , MgO, CaO and Al ₂ O ₃ with a content of 0.4% by mass or less as crystal phases. It is desirable that it contains Ca (Mg, Al) (Si, Al) ₂ O ₆ (DI), which is a type oxide crystal phase, and the ratio of the amorphous glass phase in the porcelain is 10% by mass or less. .
The porcelain preferably has a high ratio of depositing the diopside oxide crystal phase Ca (Mg, Al) (Si, Al) ₂ O ₆ (DI) as a main crystal. In addition, a similar phase such as Ca ₂ MgSi ₂ O ₇ (akermanite), CaMgSiO ₄ (montellite), or Ca ₃ MgSi ₂ O ₈ (merwinite) may be precipitated.
Furthermore, it is desirable that the Al ₂ O ₃ phase has, for example, a spherical shape, a needle shape, an indeterminate shape, and the like and is dispersed in the porcelain.

In the porcelain, amorphous glass (G) remains at the grain boundary of the crystal phase. However, the amorphous glass (G) reduces the dielectric loss, and the porcelain from the viewpoint of improving the porcelain strength. It is desirable to reduce the content of glass in the glass to 10% by mass or less, particularly 5% by mass or less, and further 2% by mass or less. Thereby, dielectric loss can be reduced.
The porcelain of the above form has a dielectric loss of 60 × 77 ⁻⁴ GHz or less, particularly 10 × 10 ⁻⁴ or less in a high frequency band, and has a small dielectric loss, 1 GHz or more, particularly 20 GHz or more, further 50 GHz or more, Furthermore, it is a porcelain suitable for forming an insulating layer of a high frequency wiring board of 70 GHz or higher.

In addition, since the diopside oxide crystal phase has a high thermal expansion characteristic of about 8 to 9 × 10 ⁻⁶ / ° C., the diopside oxide crystal phase is precipitated from the glass having the above composition. The coefficient of thermal expansion can be increased to 5 × 10 ⁻⁶ / ° C. or higher, the dielectric constant of the porcelain can be lowered to 12 or less, particularly 11 or less, and the porcelain strength can be increased to 250 MPa or more, particularly 300 MPa or more.
That is, it is desirable to adjust the thermal expansion coefficient of the porcelain appropriately so as to approximate the thermal expansion coefficient of the chip component or the like to be mounted, the printed circuit board, or the like. In particular, the thermal expansion coefficient from room temperature to 400 ° C. is 5 × 10 ⁻⁶ / It is desirable that the temperature is not ^lower than ° C., particularly 8 × 10 ⁻⁶ / ° C. or higher. This is because if the thermal expansion coefficient of the above porcelain is different from that of a chip component or printed circuit board on which the ceramics are mounted, the chip component or printed circuit board and the package may be affected by repeated temperature cycles during solder mounting or by stopping the operation of the semiconductor element. This is because a stress due to a difference in thermal expansion occurs in the mounting portion, and cracks or the like occur in the mounting portion, thereby impairing the reliability of the mounting structure.
Specifically, when matching with a GaAs chip component, the difference in thermal expansion coefficient from the GaAs chip component is 2 × 10 ⁻⁶ / ° C. or less, while matching with a printed circuit board is attempted. Above, it is desirable that the difference in thermal expansion coefficient from the printed circuit board is 2 × 10 ⁻⁶ / ° C. or less.

Furthermore, when the porcelain of the present invention is used as an insulating substrate of a wiring board, the dielectric loss is as low as 12 or less, particularly 11 or less, so that the transmission loss of a high-frequency transmission line or antenna can be reduced.
Further, by increasing the porcelain strength to 250 MPa or more, particularly 300 MPa or more, it is possible to prevent damage due to stress applied to the porcelain when mounting electronic parts such as semiconductor elements or connecting leads to the input / output terminal portions.
Next, a method for producing a porcelain using the porcelain composition of the present invention will be described.

First, as a starting material, 40 to 60% by mass of crystalline glass powder that contains SiO ₂ , MgO, CaO and Al ₂ O ₃ having a content of 0.4% by mass or less and can precipitate a diopside-type crystal phase; Al ₂ O ₃ is weighed and mixed so that the total amount of Al ₂ O ₃ is 40 to 60% by mass or the total amount of Al ₂ O ₃ and other metal oxide fillers is 40 to 60% by mass.
The Al ₂ O ₃ is preferably in the form of a powder such as a sphere, needle, or indefinite shape. In the powder, for example, Si, Mg, Ca, Sr, etc. are unavoidable in terms of low-temperature firing. Impurities may be contained as oxides in an amount of 8% by mass or less, particularly 1% by mass or less.
Then, using this mixed powder, a molded body having a predetermined shape is prepared by a known molding method such as a doctor blade method, a calender roll method, a rolling method, or a press molding method, and then the molded body is oxidized at 800 to 1000 ° C. It can be produced by firing in an atmosphere or an inert atmosphere.

Here, the reason for limiting the firing temperature to the above range is that if the firing temperature is less than 800 ° C., the porcelain cannot be densified, the crystallinity of the glass is low, and the dielectric loss in the high frequency region increases. Conversely, if the temperature exceeds 1000 ° C., simultaneous firing with a low-resistance metal such as Cu or Ag cannot be performed.
Further, in order to produce a wiring board having a wiring layer, a slurry is prepared by mixing the mixed powder with an appropriate organic solvent or solvent, and this is prepared by a conventionally known doctor blade method or calendar roll method, or It is formed into a sheet by a rolling method or a press forming method. And after forming a through hole as needed in this sheet-like molded object, the metal paste containing at least 1 sort (s) of copper, gold | metal | money, and silver is filled in a through hole. Then, on the surface of the sheet-like molded body, printing is performed so that the wiring layer has a thickness of 5 to 30 μm by a screen printing method, a gravure printing method or the like using the metal paste on a high-frequency line pattern or the like capable of transmitting a high-frequency signal. Apply.

Thereafter, a plurality of sheet-like molded bodies are aligned, pressure-bonded, and fired in a non-oxidizing atmosphere such as nitrogen gas or nitrogen-oxygen mixed gas at 800 to 1000 ° C. to produce a high-frequency wiring board. Can do.
A chip component such as a semiconductor element is appropriately mounted on the surface of the wiring board and connected to the wiring layer so that signals can be transmitted. As a connection method, the chip component is directly mounted on the wiring layer to be connected, or the chip component is bonded with an adhesive having a thickness of about 50 μm such as resin, Ag-epoxy, Ag-glass, Au-Si resin, metal, ceramics, or the like. It adheres to the surface of the insulating substrate and connects the wiring layer and the semiconductor element by wire bonding, TAB tape or the like.

As the semiconductor element, a Si-based or GaAs-based chip component can be used, but it is particularly effective for mounting a GaAs-based chip component in terms of approximation of the thermal expansion coefficient.
In addition, on the surface of the wiring board on which the semiconductor element is mounted, an insulating material of the same type as that of the insulating substrate, other insulating materials, or a metal having good heat dissipation, etc., and a cap having electromagnetic wave shielding properties are made of glass, resin, brazing. The semiconductor element may be hermetically sealed by bonding with an adhesive such as a material.

(Configuration of wiring board)
A specific structure of a package for housing a semiconductor element, which is an example of a high-frequency wiring board that can suitably use the porcelain composition of the present invention, and its mounting structure will be described with reference to FIG. FIG. 1 is a schematic cross-sectional view of a semiconductor storage package, in particular, a ball grid array (BGA) type package in which connection terminals are formed of ball-shaped terminals. According to FIG. 1, the package A has a cavity 3 formed by an insulating substrate 1 made of an insulating material and a lid 2, and a chip component 4 such as GaAs is formed in the cavity 3 by the above-described adhesive or the like. Has been implemented.
A wiring layer 5 electrically connected to the chip component 4 is formed on the surface and inside of the insulating substrate 1. The wiring layer 5 is preferably made of a low resistance metal such as copper, silver or gold in order to reduce the conductor loss as much as possible when transmitting a high frequency signal. In addition, when a high frequency signal of 1 GHz or more is transmitted to the wiring layer 5, the high frequency signal needs to be transmitted without loss. Therefore, the wiring layer 5 includes a known strip line, microstrip line, coplanar line, It is composed of at least one of dielectric waveguide lines.
Further, in the package A of FIG. 1, a connection electrode layer 6 is formed on the bottom surface of the insulating substrate 1 and connected to the wiring layer 5 in the package A. A ball-shaped terminal 8 is formed on the connection electrode layer 6.

  In order to mount the package A on an external circuit board, as shown in FIG. 1, a wiring conductor 10 is formed on the surface of an insulating substrate 9 made of an insulating material containing an organic resin such as polyimide resin, epoxy resin, or phenol resin. It is mounted on the formed external circuit board B through a brazing material. Specifically, the ball terminal 8 attached to the bottom surface of the insulating substrate 1 in the package A and the wiring conductor 10 of the external circuit board B are brought into contact with each other and brazed with a brazing material 11 such as Pb-Sn. Implemented. Further, the ball terminal 8 itself may be melted and connected to the wiring conductor 10.

According to the present invention, it is important to use the porcelain according to claim 5 of the present invention as the insulating substrate constituting the package A, and it is particularly desirable to use the porcelain defined in claim 7 as the porcelain.
Further, a surface-mount package that can be mounted by brazing or bonding the chip component 4 such as GaAs, or mounted on an external circuit board such as a printed circuit board by brazing with the ball terminals 8 interposed therebetween. Therefore, the difference in thermal expansion between the chip part such as GaAs and the insulating substrate of the external circuit board can be made smaller than that of the conventional ceramic material. As a result of suppressing the generation of stress, the long-term reliability of the mounting structure can be enhanced.

Two kinds of glass powders (glasses A and B) having an average particle diameter of 2 μm and capable of being precipitated with the following composition (glasses A and B) and glass powder C on which no diopside crystal phase is precipitated were prepared.
(1) Glass A: SiO ₂ ; 52.2 mass%, MgO; 1.8 mass%, CaO; 25.85 mass%, Al ₂ O ₃ ; 0.15 mass%
(2) Glass B: SiO ₂ ; 50% by mass, MgO; 20% by mass, CaO; 30% by weight
(3) Glass C: SiO ₂ ; 10.4 mass%, B ₂ O ₃ ; 45.3 mass%, CaO; 35.2 mass%, Al ₂ O ₃ ; 2.5 mass%, Na ₂ O; 6 .6% by mass
And the filler (purity 99%) shown in Tables 1 and 2 was added with respect to the said glass. As the filler, with _Al 2 _{O 3} is _α-Al 2 _{O 3,} and _γ-Al 2 _{O 3,} powder of an average particle size 3 [mu] m, about others using powder having an average particle size of 2μm .
Furthermore, an organic binder, a plasticizer, and toluene were added to this mixture to prepare a slurry, and then a green sheet having a thickness of 300 μm was produced using this slurry by a doctor blade method. And 10-15 sheets of this green sheet were laminated | stacked, the pressure of 100 kg / cm < ² > was applied at the temperature of 50 degreeC, and the thermocompression bonding was carried out. The obtained laminate was subjected to binder removal treatment at 700 ° C. in a steam-containing / nitrogen atmosphere, and then fired in dry nitrogen at the firing temperature shown in Tables 1 and 2 for 2 hours to obtain a ceramic for an insulating substrate.

The dielectric constant and dielectric loss of the obtained porcelain were evaluated by the following methods. The measurement was cut into a shape having a shape, a diameter of 2 to 7 mm, and a thickness of 1.5 to 2.5 mm, and was performed by a dielectric cylindrical resonator method using a network analyzer and a synthesized sweeper at 60 GHz. In the measurement, the dielectric resonator was excited with an NRD guide (non-radiative dielectric line), and the dielectric constant and dielectric loss were calculated from the resonance characteristics of the TE ₀₂₁ and TE ₀₃₁ modes.
Further, a thermal expansion curve from room temperature to 400 ° C. was taken to calculate a thermal expansion coefficient.

Moreover, the ratio of the glass phase in the porcelain was evaluated by the Rietveld method. Specifically, after the porcelain to be evaluated was pulverized, ZnO was added at a predetermined ratio as an internal standard sample, and ethanol was added and wet mixed. After drying this, X-ray diffraction measurement was performed, and the ratio of the glass phase present in the porcelain was calculated from the addition ratio of ZnO and the ratio of ZnO obtained by the Rietveld method to the crystal phase in the porcelain. Further, the ratio of Si in the glass phase was measured by TEM, and the ratio in terms of SiO ₂ was calculated. Furthermore, the 4-point bending strength of the porcelain was measured based on JIS R1601, and the thermal conductivity was measured by a laser flash method on a 1 mm thick sample. The results are shown in Tables 1 and 2.

As is clear from the results in Tables 1 and ₂ , the amount of glass A and B containing SiO ₂ , Al ₂ O ₃ , MgO, and CaO is less than 50% by mass. In Nos. 1 and 18, it was difficult to sinter at a low temperature, and it was not densified.
In addition, Sample No. _{2 in which the} amount of Al ₂ O ₃ added as a filler is less than 1% by mass. In 10 and 22, the porcelain strength decreased.
Sample No. using glass C containing a large amount of B ₂ O ₃ as glass. No. 27 was melted, and Sample No. In No. 28, since the diopside crystal phase disappeared, a lot of glass containing boron remained and the dielectric loss tended to increase.
In addition, the sample No. in which the filler amount is smaller than the amount specified in the present invention. In 7 to 11 and 22, the porcelain strength was as low as 240 MPa at the maximum.
On the other hand, all of the devices according to the present invention have a dielectric loss of 12 × 10 ⁻⁴ or less at 60 GHz, a thermal expansion coefficient of 5 × 10 ⁻⁶ / ° C. or more and a measurement frequency of 60 GHz. Hereinafter, it had excellent characteristics with a porcelain strength of 250 MPa or more.

  The porcelain composition and porcelain of the present invention are used as an insulating substrate in a wiring board applied to a package for housing a semiconductor element, a multilayer wiring board, and the like, particularly a wiring board used in a high frequency band such as a microwave and a millimeter wave. .

It is a schematic sectional drawing for demonstrating an example of the mounting structure of the package for a semiconductor element accommodation which is an example of the high frequency wiring board using the ceramic which baked the composition of this invention.

Explanation of symbols

A Package for housing semiconductor element B External circuit board 1 Insulating board 2 Lid 3 Cavity 4 Chip component 5 Wiring layer 6 Connection electrode layer 8 Ball terminal 9 Insulating board 10 Wiring conductor 11 Brazing material

Claims (9)

40 to 70% by mass of a crystalline glass powder composed of SiO ₂ , MgO, CaO and Al ₂ O ₃ having a content of 0.4% by mass or less and capable of precipitating a diopside oxide crystal phase as a main crystal; A porcelain composition comprising 30 to 60% by mass of a metal oxide powder containing at least ₁ to 60% by mass of Al ₂ O ₃ as a filler. The crystalline glass powder, SiO ₂ 40 to 65 wt%, claim, characterized in that it consists MgO11~30 wt%, CaO20～35 mass%, and Al ₂ and O ₃ 0 to 0.4 wt% 1 The composition for porcelain described. In addition to Al ₂ O ₃ , MgAl ₂ O ₄ , ZnAl ₂ O ₄ , 3Al ₂ O ₃ .2SiO ₂ , Mg ₂ Al ₄ Si ₅ O ₁₈ , SiO ₂ , TiO ₂ , MgTiO ₃ , SrTiO ₃ , BaTiO _{3 are} used as the filler. _3. The porcelain composition according to claim 1, comprising at least one of CaTiO ₃ , Zn ₂ TiO ₄ , CuO, and Cu ₂ O. ₄ .   The porcelain composition according to any one of claims 1 to 3, wherein the crystalline glass powder has a softening point and a crystallization temperature of 830 ° C or lower and 870 ° C or lower, respectively. It is composed of at least SiO ₂ , MgO, CaO and Al ₂ O _{3 with a} content of 0.4% by mass or less, the main crystal being a diopside oxide crystal, and at least Al ₂ O ₃ as a filler. A porcelain having a dielectric loss of 20 × 10 ⁻⁴ or less at 60 to 77 GHz. The ratio of the residual glass phase, which is baked at a baking temperature of 850 ° C. or more and is contained in a phase composed of SiO ₂ , MgO, CaO and Al ₂ O ₃ having a content of 0.4 mass% or less, is 10 mass% or less. The porcelain according to claim 5. 7. The porcelain according to claim 5 or 6, wherein a thermal expansion coefficient from room temperature to 400 ° C. is 5 × 10 ⁻⁶ / ° C. or more, a dielectric constant is 12 or less, and a porcelain strength is 250 MPa or more. SiO ₂ , MgO, CaO and a content of Al ₂ O ₃ of 0.4 mass% or less, crystalline glass powder 40-70 mass% capable of precipitating a diopside oxide crystal phase as a main crystal, after molding at least _Al 2 _{O 3} and composed of a metal oxide 30 to 60% by weight, containing 1 to 60 wt% mixture as a filler, and fired at a temperature of 800 to 1000 ° C., SiO _2, MgO and CaO, or A method for producing a porcelain containing a diopside oxide crystal phase containing SiO ₂ , MgO, CaO and Al ₂ O ₃ and at least Al ₂ O ₃ . Wherein the crystallized glass powder, to the SiO ₂ 40 to 65 wt%, and MgO11~30 mass%, characterized in that it consists and CaO20~35 mass%, and Al ₂ O ₃ 0 to 0.4 wt% Item 9. A method for producing a porcelain according to Item 8.

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