TWM351985U - LED base structure capable of enhancing effect of mixture of light - Google Patents

LED base structure capable of enhancing effect of mixture of light Download PDF

Info

Publication number
TWM351985U
TWM351985U TW097217099U TW97217099U TWM351985U TW M351985 U TWM351985 U TW M351985U TW 097217099 U TW097217099 U TW 097217099U TW 97217099 U TW97217099 U TW 97217099U TW M351985 U TWM351985 U TW M351985U
Authority
TW
Taiwan
Prior art keywords
light
cup
emitting diode
degrees
depth
Prior art date
Application number
TW097217099U
Other languages
English (en)
Inventor
Yong-Fu Li
Original Assignee
Bi Chi Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bi Chi Corp filed Critical Bi Chi Corp
Priority to TW097217099U priority Critical patent/TWM351985U/zh
Publication of TWM351985U publication Critical patent/TWM351985U/zh
Priority to EP09160945A priority patent/EP2148369A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting

Description

M351985 八、新型說明： 【新型所屬之技術領域】 本創作係為一種可提升混光效果之發光二極體座體沾 構，特別為—種應用於提升多色發光二極體混光效果之、一。 極體座體結構0 x九一 【先前技術】 -一 近年來，發光二極體應用的領域越來越廣泛，不作可將發 籲光二極體應用於顯示器之背光模組中，也可將發光二極體2 於日常照明中。然而，為了提高發光二極體之應用效率，大都 希望能不斷提升發光二極體的發光效率及混光效果。因此，如 何旎藉由發光二極體座體結構之設計，再進—步提高發光二極 體的發光效率及混光效果乃是目前努力研發的目標。 第1圖係為習知發光二極體座體結構10之剖視圖。第2 圖係為習知發光二極體座體結構1〇之立體圖。如第丨圖所示， ^習知發光二極體座體結構10係包括至少二接腳11 ;以及—本 體12。接腳11係分別設置於本體12之兩側’且每一接腳u 可分別設置於本體12所形成之一碗杯13中，並延伸至本體12 之外部適當位置處，用以作為後續製程之接點。如第2圖所示， 每一接腳11間係藉由本體12相互絕緣，而發光二極體14可 設置在其中一接腳11上，並以打線之方式與接腳Π電性相 連，以進一步在接腳Π上施加電壓而使發光二極體14發光。 如第1圖所示，然而，當設置多顆發光二極體14於碗杯 13中時，由於碗杯13之深度〇過淺，例如大約介於〇. 4毫米 M351985 及0.8毫米之間，而造成碗杯13中斜面131的面積過小，所 以發光一極體14所發出之光線無法有效地利用斜面131進行 多次反射，進而導致發光二極體14發出之光線混光不均勻， 也無法使發光二極體14所發出之光線有效地朝正向出光，因 此使得發光二極體丨4之亮度一直無法有致提升。尤其是當設 置多色發光二極體丨4於習知發光二極體座體結構1〇中時，因 .碗杯13過淺，所以容易造成各色發光二極體14發出之光線無 法在碗杯13中充分地混光。 _ 此外，由於需在碗杯13中填入封裝膠體π，以完成發光 一極體1=之封裝，但是因習知發光二極體座體結構中之碗 杯j k汉所以在進行點膠作業時，不易控制封裝膠體15之 ^ /、易孓生溢勝之情況，並且容易使得點膠良率下降。 【新型内容】 構，—種可提升混光效果之發光二極體座體結
度以及轉良^邱之深度，料到提相纽果、發光亮 〈功敫。 為達上述目的 二極體座體結構， 一接腳係具有—第 合於導線架上並形 而第二端部係分別 係大於0 · 8毫米。 ，本創作係提供一種可提升混光效果之發光 其包括一導線架，其具有複數個接腳，又每 〜端部及一第二端部；以及一本體，其係結 成有一碗杯，又第一端部係外露於碗杯中， 延伸至本體之外部，其特徵在於碗杯之深度 上述之發光~ k 〜愚體座體結構，其中導線架可具有六接腳， 6 ' M351985 且接腳之第一端部間藉由本體彼此電性分離。 上述之發光二極體座體結構，其中每一第二端部可延伸設 置於本體之側面及底面。 上述之發光二極體座體結構，其中碗杯之深度可介於1.7 毫米至2.6毫米之間、1.73毫米至1.83毫来之間或1.75毫米 至1.81毫米之間 - 上述之發光二極體座體結構，其中本體之總高度可介於2 .毫米至3.6毫米之間、2. 3毫米至3.3毫米之間或2.69毫米至 鲁 2. 79毫米之間。 上述之發光二極體座體結構，其中碗杯可具有一第一表面 及一第二表面，且第一表面係與第二表面間可形成有一第一夾 角，而第一夾角可介於35度至55度之間、40度至50度之間 或43度至47度之間。 藉由本創作的實施，至少可達到下列進步功效： 一、藉由增加碗杯之深度，以增加碗杯之斜面面積，並藉此提 . 升發光二極體之混光效果。 m 零二、藉由增加碗杯之深度，以增加碗杯之容置空間，藉此降低 封裝膠體溢膠情況之發生。 三、由於發光二極體之亮度因碗杯之深度增加而提升，因此可 將發光二極體應用於戶外使用。 為了使任何熟習相關技藝者了解本創作之技術内容並據 以實施，且根據本說明書所揭露之内容、申請專利範圍及圖 式，任何熟習相關技藝者可輕易地理解本創作相關之目的及優 點，因此將在實施方式中詳細敘述本創作之詳細特徵以及優 7 M351985 點。 【實施方式】 第3圖係為本劍作之一種可提升混光效果之發光二極 -結構20之立體實施侧。第4關為本創作之—種可提 混光效果之發光二極體座體結構2〇之俯視實施例圖。第 -係為本削乍之一種可提升混光效果之發光二極體座體結構2〇 -之剖視實施例圖。 -如第3®所示’本實施_為—種可提升混光效果之 -極體座體結構20，其包括一導線架3〇 ;以及一本體4〇。 如第4圖所示’導線架3〇，其具有複數個接腳3卜又如 第5圖所示’每一接腳31係具有一第一端部3ιι及一第二端 部312’而導線架3〇可以為金屬支架’其係可在發光二極體座 體結構20中用以承载發光二極體14。 一如第5圖所示，本體4G，其係結合於導線架⑽上並形成 有二碗杯41。而本體之總高度H可介於2毫米至& 6毫米之間 或"於2.3毫米至3.3毫米之間’更佳的是本體之總高度η可 介於2. 69毫米至2· 79毫米之間。 一如第3圖及第4圖所示，碗杯41可具有一第一表面化 及一第二表面412，第-表® 411係為碗杯41之底面，而第二 表面=2係為碗杯41之斜面，並且與第一表面4ΐι相接合， 3第5圖所示’第一表面411係與第二表面412間形成有一 弟-夾角Θ，而第一夾角θ可介於35度至55度之間 '介於4〇 度至50度之間或介於43度至47度之間，以使得發光二極體 8 * M351985 14發出之光線可適當地被第二表面412反射。 如第3圖及第4圖所示，接腳31之第一端部311係外露 於碗杯41中，以使得發光二極體14可設置於第一端部311上， 並以打線方式與導線架30之接腳31電性連接，而接腳31之 第二端部312係可分別延伸至本體40之外部，並且可延伸設 置於本體40之侧面及底面，用以作為後續製程之接點。 又如第3圖所示，舉例來說，導線架3〇可具有六個接腳 31，且每一接腳31之第一端部311之間可藉由本體仙彼此電 性分離，而不同色之發光二極體14係可分別設置於接腳31之 第一端部311上，並可由接腳31之第二端部312輸入電流至 不同色之發光二極體14，而使得發光二極體14可發出不同色 之光線’並在碗杯41中混光後出光。 ^如第5圖所示，為了提升發光二極體14之混光效果，可 藉由將本體4G中碗杯41之深度D設計為大於Q 8毫米，以相 對增加碗杯之第二表面412之面積，並增加可用以反射發 先二極體Η發出之光線之反射面積，藉此使得光線可在碗杯 =中充分混光後再出光’以減少發光二極體14之出光光場周 邊=雜散光。而為了使發光二極體14可具有更佳之混光 k杯41之深度D可介於l 7毫米至2 皋丄 1 毛卞主Ζ.6^米之間或介於1.73 毛赤至1.83宅未之間，更佳的是碗杯4 U5毫米至UiQ之間。 度D可介於介於 藉由增加碗杯41之深度D，亦可增 因此在進-步進行點膠作業將封裝膠體^之容置空間’ 裴發光二極體14時，可_县地5填入碗杯41中以封 転易地控制封裂膠體15之膠量，並可 9 M351985 降低溢膠情況之發生，進而提高點膠良率。此外，由於亦可藉 由碗杯41之設計，而提升發光二極體14之亮度，所以可增加 發光一極體14之應用範圍，例如可應用於戶外看板或是戶外 照明…等。 惟上述各實施例係用以說明本創作之特點，其目的在使孰 習該技術者能瞭解本創作之内容並據以實施，而非限定本聽 、之專利範圍，故凡其他未脫離本創作所揭示之精神而 -效修飾或修改，仍應包含在以下所述之申請專利範圍中、 【圖式簡單說明】 二極體座體結 第1圖係為習知發光二極體座體結構之剖視圖。 第2圖係為習知發光二極體座體結構之立體圖。 第3圖係為本創作之一種可提升混光效果之發光 構之立體實施例圖。 第4圖係為本創作之一種可提升混光效果 —極體座砂么士
構之俯視實施例圖。 第5圖係為本創作之-種可提升混光效果之發光二 構之剖視實施例圖。 m、〜 【主要元件符號說明】 10 ................習知發光二極體座體結構 11 ................接腳 12 ................本體 13 ................碗杯 M351985 131..............斜面 14 ................發光二極體 15 ................封裝膠體 20................發光二極體座體結構 30 ................導線架 31 ................接腳 、311..............第一端部 .312..............第二端部 • 40................本體 41................孝不 411 ..............第一表面 412 ..............第二表面 D.................深度 Η.................總高度 Θ ................第一夾角
11

Claims (1)

  1. M351985 九、申請專利範圍·· 1. -種可提升混光效果之發光二極體座體結構，其包括一導 線架’其具有複數個獅，又每一該接腳係具有一第一端 部及-第二端部；以及一本體，其係結合於該導線架上並 形成有一碗杯，又該些第一端部係外露於該碗杯中，而該 些第二端部係分別延伸至該本體之外部，其特徵在於該碗 杯之深度係大於0. 8毫米。
    !•如申請專利範圍第丨項之發光二極體座體結構，其中該導 具有六該接腳’且該些接腳之該第一端部間藉由該本 體彼此電性分離。
    3. 如:請專利範圍第i項之發光二極體座體結構， 該第二端部係延伸設置於該本體之侧面及底面。 4. 如申請專利範圍第1項之發光二極體座體結構， 杯之深度係介於1.7毫米至2. 6毫米之間。 5. 如申請專利範圍第1項之發光二極體座體結構， 杯之深度係介於1.73毫米至1.83毫米之間。 •如申請專利範圍第1項之發光二極體座體結構， 杯之深度係介於1.75毫米至1.81毫米之間。 •如申請專利範圍第1項之發光二極體座體結構， 8體之總高度係介於2毫米至3.6毫米之間。 •如申請專利範圍第1項之發光二極體座體結構， 9體之總高度係介於2.3毫米至3.3毫米之間。 •如申請專利範圍第1項之發光二極體座體結構， 體之總高度係介於2. 69毫米至2. 79毫米之間。 其中每一 其中該碗 其中該碗 其中該碗 其中該本 其中該本 其中該本 12 M351985 構’其中該碗 表面係與該第 i〇.如申請專利範圍第1項之發光二極 让體座體結 杯具有一第一表面及一第二表面，且該第— 二表面間形成有一第一爽角。 11.如申請專利範圍第Π)項之發光二極體座體結構， 一夾角係介於35度至55度之間。 〃 ^如申請專利範圍第1G項之發光二極體座體結構，其中 —夾角係介於40度至50度之間。 、
    13.如申請專利範圍第1〇項之發光二極體座體結構，其中兮& —夾角介於43度至47度之間。 、^弟 13
TW097217099U 2008-07-25 2008-09-22 LED base structure capable of enhancing effect of mixture of light TWM351985U (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW097217099U TWM351985U (en) 2008-07-25 2008-09-22 LED base structure capable of enhancing effect of mixture of light
EP09160945A EP2148369A1 (en) 2008-07-25 2009-05-22 LED Base Structure with enhanced light-mixing effect

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW97213256 2008-07-25
TW097217099U TWM351985U (en) 2008-07-25 2008-09-22 LED base structure capable of enhancing effect of mixture of light

Publications (1)

Publication Number Publication Date
TWM351985U true TWM351985U (en) 2009-03-01

Family

ID=41268177

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097217099U TWM351985U (en) 2008-07-25 2008-09-22 LED base structure capable of enhancing effect of mixture of light

Country Status (2)

Country Link
EP (1) EP2148369A1 (zh)
TW (1) TWM351985U (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10431567B2 (en) 2010-11-03 2019-10-01 Cree, Inc. White ceramic LED package
US8901583B2 (en) * 2010-04-12 2014-12-02 Cree Huizhou Opto Limited Surface mount device thin package
US9831393B2 (en) 2010-07-30 2017-11-28 Cree Hong Kong Limited Water resistant surface mount device package
US9240395B2 (en) 2010-11-30 2016-01-19 Cree Huizhou Opto Limited Waterproof surface mount device package and method
KR101823506B1 (ko) * 2011-06-29 2018-01-30 엘지이노텍 주식회사 발광 소자 패키지 및 이를 구비한 라이트 유닛
US9711489B2 (en) 2013-05-29 2017-07-18 Cree Huizhou Solid State Lighting Company Limited Multiple pixel surface mount device package

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4066620B2 (ja) * 2000-07-21 2008-03-26 日亜化学工業株式会社 発光素子、および発光素子を配置した表示装置ならびに表示装置の製造方法
DE10308890A1 (de) * 2003-02-28 2004-09-09 Opto Tech Corporation Gehäusestruktur für eine Lichtemissionsdiode und Verfahren zu dessen Herstellung
KR20100131500A (ko) * 2005-09-22 2010-12-15 미쓰비시 가가꾸 가부시키가이샤 반도체 발광 디바이스용 부재 및 그 제조 방법, 및 그것을 이용한 반도체 발광 디바이스
TWI321857B (en) * 2006-07-21 2010-03-11 Epistar Corp A light emitting device
EP2100908B1 (en) * 2006-11-15 2014-05-21 Hitachi Chemical Company, Ltd. Heat curable resin composition for light reflection
US20080175009A1 (en) * 2007-01-19 2008-07-24 Unity Opto Technology Co., Ltd. Edge-emitting light-emitting diode

Also Published As

Publication number Publication date
EP2148369A1 (en) 2010-01-27

Similar Documents

Publication Publication Date Title
JP5810758B2 (ja) 発光装置
CN103579466B (zh) 发光装置
TWI436506B (zh) 使用預製螢光帽蓋的發光二極體封裝結構
TW200618354A (en) Light emitting diode device
TWM351985U (en) LED base structure capable of enhancing effect of mixture of light
TWI435467B (zh) 發光二極體封裝體
TWI433361B (zh) 用於增加均光效果的發光二極體封裝結構
CN104112810A (zh) 芯片级封装led的封装结构
TWI440159B (zh) 發光二極體封裝結構及其支架結構
JP3183896U (ja) 光混合式発光ダイオードの構造
JP2015225910A (ja) 発光モジュール及び照明装置
JP3994094B2 (ja) 発光ダイオードランプ
TWI329934B (en) Lead frame structure of light emitting diode
CN104241502B (zh) 一种led封装结构
TWI473304B (zh) A plurality of blue light emitting diode chips in white
KR20140004351A (ko) 발광 다이오드 패키지
TW201426966A (zh) 發光二極體燈條
TW201401566A (zh) 發光二極體的封裝方法
CN202678405U (zh) 发光二极管装置
KR20130014755A (ko) 발광 소자 패키지 및 조명 시스템
TWI527274B (zh) 發光二極體封裝結構
CN202855794U (zh) 一种直插式led封装结构
CN217035664U (zh) 一种全角度发光的led封装结构及发光组件
JP3185606U (ja) 底部がサファイアである横型電極構造ｌｅｄの白色光パッケージ
TWM467187U (zh) 複數個藍光發光二極體晶片的白光封裝

Legal Events

Date Code Title Description
MM4K Annulment or lapse of a utility model due to non-payment of fees