TWI907178B - 用於脈寬調變量控制之系統及方法 - Google Patents

用於脈寬調變量控制之系統及方法

Info

Publication number
TWI907178B
TWI907178B TW113145967A TW113145967A TWI907178B TW I907178 B TWI907178 B TW I907178B TW 113145967 A TW113145967 A TW 113145967A TW 113145967 A TW113145967 A TW 113145967A TW I907178 B TWI907178 B TW I907178B
Authority
TW
Taiwan
Prior art keywords
valve
syringe
syringe assemblies
pulse width
dosage
Prior art date
Application number
TW113145967A
Other languages
English (en)
Chinese (zh)
Other versions
TW202527184A (zh
Inventor
馬里烏斯 格雷戈爾
Original Assignee
美商蘭姆研究公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商蘭姆研究公司 filed Critical 美商蘭姆研究公司
Publication of TW202527184A publication Critical patent/TW202527184A/zh
Application granted granted Critical
Publication of TWI907178B publication Critical patent/TWI907178B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0612—Production flow monitoring, e.g. for increasing throughput
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/14—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with multiple outlet openings; with strainers in or outside the outlet opening
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/30—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to control volume of flow, e.g. with adjustable passages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Automation & Control Theory (AREA)
  • Drying Of Semiconductors (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Radar Systems Or Details Thereof (AREA)
  • Pulse Circuits (AREA)
TW113145967A 2017-09-26 2018-09-25 用於脈寬調變量控制之系統及方法 TWI907178B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201762563129P 2017-09-26 2017-09-26
US62/563,129 2017-09-26
US201762590815P 2017-11-27 2017-11-27
US62/590,815 2017-11-27

Publications (2)

Publication Number Publication Date
TW202527184A TW202527184A (zh) 2025-07-01
TWI907178B true TWI907178B (zh) 2025-12-01

Family

ID=65903780

Family Applications (3)

Application Number Title Priority Date Filing Date
TW113145967A TWI907178B (zh) 2017-09-26 2018-09-25 用於脈寬調變量控制之系統及方法
TW107133589A TWI829651B (zh) 2017-09-26 2018-09-25 用於脈寬調變量控制之系統及方法
TW112149941A TWI869129B (zh) 2017-09-26 2018-09-25 用於脈寬調變量控制之系統及方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW107133589A TWI829651B (zh) 2017-09-26 2018-09-25 用於脈寬調變量控制之系統及方法
TW112149941A TWI869129B (zh) 2017-09-26 2018-09-25 用於脈寬調變量控制之系統及方法

Country Status (8)

Country Link
US (4) US11542598B2 (https=)
EP (3) EP4235743B1 (https=)
JP (2) JP7421482B2 (https=)
KR (3) KR20250139892A (https=)
CN (2) CN120854322A (https=)
SG (1) SG11202002686YA (https=)
TW (3) TWI907178B (https=)
WO (1) WO2019067323A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7421482B2 (ja) 2017-09-26 2024-01-24 ラム リサーチ コーポレーション パルス幅変調されたドーズ制御のためのシステムおよび方法
TW202318493A (zh) * 2021-07-07 2023-05-01 美商英福康公司 用於沉積和蝕刻腔室的上游過程監視
US20240203695A1 (en) * 2022-12-16 2024-06-20 Applied Materials, Inc. Fast gas switching
KR20250148210A (ko) 2024-04-05 2025-10-14 주식회사 엘지에너지솔루션 배터리 팩 및 이를 포함하는 자동차

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040224504A1 (en) * 2000-06-23 2004-11-11 Gadgil Prasad N. Apparatus and method for plasma enhanced monolayer processing
US20120156363A1 (en) * 2010-12-17 2012-06-21 Veeco Instruments Inc. Gas Injection System for Chemical Vapor Deposition Using Sequenced Valves
WO2017160614A1 (en) * 2016-03-15 2017-09-21 Applied Materials, Inc Methods and assemblies for gas flow ratio control

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4761269A (en) * 1986-06-12 1988-08-02 Crystal Specialties, Inc. Apparatus for depositing material on a substrate
US6197123B1 (en) 1997-12-18 2001-03-06 Texas Instruments Incorporated Method for cleaning a process chamber used for manufacturing substrates during nonproduction intervals
JP3830670B2 (ja) * 1998-09-03 2006-10-04 三菱電機株式会社 半導体製造装置
EP1146967A4 (en) * 1999-01-20 2009-05-20 Entegris Inc DEBIT REGULATOR
US6143080A (en) * 1999-02-02 2000-11-07 Silicon Valley Group Thermal Systems Llc Wafer processing reactor having a gas flow control system and method
US6706541B1 (en) 1999-10-20 2004-03-16 Advanced Micro Devices, Inc. Method and apparatus for controlling wafer uniformity using spatially resolved sensors
US6333272B1 (en) * 2000-10-06 2001-12-25 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US20030116089A1 (en) 2001-12-04 2003-06-26 Walther Steven R. Plasma implantation system and method with target movement
US20030101935A1 (en) 2001-12-04 2003-06-05 Walther Steven R. Dose uniformity control for plasma doping systems
US20040040503A1 (en) * 2002-08-29 2004-03-04 Micron Technology, Inc. Micromachines for delivering precursors and gases for film deposition
US20040040502A1 (en) * 2002-08-29 2004-03-04 Micron Technology, Inc. Micromachines for delivering precursors and gases for film deposition
US20040050325A1 (en) * 2002-09-12 2004-03-18 Samoilov Arkadii V. Apparatus and method for delivering process gas to a substrate processing system
US7628860B2 (en) * 2004-04-12 2009-12-08 Mks Instruments, Inc. Pulsed mass flow delivery system and method
JP4502189B2 (ja) 2004-06-02 2010-07-14 ルネサスエレクトロニクス株式会社 薄膜の形成方法および半導体装置の製造方法
US7228645B2 (en) * 2005-01-11 2007-06-12 Xuyen Ngoc Pham Multi-zone shower head for drying single semiconductor substrate
JP2006253696A (ja) * 2005-03-10 2006-09-21 Asm America Inc ガスインジェクタ制御システム
US7846497B2 (en) * 2007-02-26 2010-12-07 Applied Materials, Inc. Method and apparatus for controlling gas flow to a processing chamber
US8486191B2 (en) * 2009-04-07 2013-07-16 Asm America, Inc. Substrate reactor with adjustable injectors for mixing gases within reaction chamber
US9840778B2 (en) * 2012-06-01 2017-12-12 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma chamber having an upper electrode having controllable valves and a method of using the same
US9488315B2 (en) * 2013-03-15 2016-11-08 Applied Materials, Inc. Gas distribution apparatus for directional and proportional delivery of process gas to a process chamber
US9624805B2 (en) * 2014-08-26 2017-04-18 Caterpillar Inc. Aftertreatment system having dynamic independent injector control
JP6502779B2 (ja) 2015-07-29 2019-04-17 東京エレクトロン株式会社 ガス供給系のバルブのリークを検査する方法
US20170092470A1 (en) * 2015-09-28 2017-03-30 Applied Materials, Inc. Plasma reactor for processing a workpiece with an array of plasma point sources
US10256075B2 (en) * 2016-01-22 2019-04-09 Applied Materials, Inc. Gas splitting by time average injection into different zones by fast gas valves
US10403476B2 (en) 2016-11-09 2019-09-03 Lam Research Corporation Active showerhead
JP7421482B2 (ja) 2017-09-26 2024-01-24 ラム リサーチ コーポレーション パルス幅変調されたドーズ制御のためのシステムおよび方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040224504A1 (en) * 2000-06-23 2004-11-11 Gadgil Prasad N. Apparatus and method for plasma enhanced monolayer processing
US20120156363A1 (en) * 2010-12-17 2012-06-21 Veeco Instruments Inc. Gas Injection System for Chemical Vapor Deposition Using Sequenced Valves
WO2017160614A1 (en) * 2016-03-15 2017-09-21 Applied Materials, Inc Methods and assemblies for gas flow ratio control

Also Published As

Publication number Publication date
EP4235743A2 (en) 2023-08-30
CN111164743A (zh) 2020-05-15
CN111164743B (zh) 2025-06-17
EP3688794B1 (en) 2023-06-28
TW201923930A (zh) 2019-06-16
US12215421B2 (en) 2025-02-04
WO2019067323A1 (en) 2019-04-04
JP2024038344A (ja) 2024-03-19
JP7421482B2 (ja) 2024-01-24
US20240093365A1 (en) 2024-03-21
US11834736B2 (en) 2023-12-05
TW202527184A (zh) 2025-07-01
US20230160065A1 (en) 2023-05-25
EP3688794A4 (en) 2021-07-07
TWI829651B (zh) 2024-01-21
US20200270748A1 (en) 2020-08-27
CN120854322A (zh) 2025-10-28
KR20240046651A (ko) 2024-04-09
EP3688794A1 (en) 2020-08-05
EP4391011A3 (en) 2024-11-06
TWI869129B (zh) 2025-01-01
US11542598B2 (en) 2023-01-03
EP4235743B1 (en) 2025-03-12
JP7754960B2 (ja) 2025-10-15
US20250179634A1 (en) 2025-06-05
KR102654894B1 (ko) 2024-04-03
KR20250139892A (ko) 2025-09-23
EP4391011A2 (en) 2024-06-26
KR20200049877A (ko) 2020-05-08
EP4235743A3 (en) 2023-11-08
TW202427648A (zh) 2024-07-01
KR102861934B1 (ko) 2025-09-18
JP2020535666A (ja) 2020-12-03
SG11202002686YA (en) 2020-04-29

Similar Documents

Publication Publication Date Title
TWI907178B (zh) 用於脈寬調變量控制之系統及方法
KR102688484B1 (ko) 비말 동반된 증기를 측정하기 위한 시스템들 및 방법들
KR102503328B1 (ko) 다운스트림 반응기에서 에지 에칭 레이트 제어를 위한 조정가능한 측면 가스 플레넘
US20250171902A1 (en) Temperature control of a multi-zone pedestal
TWI853853B (zh) 用於增進熱均勻性的具有多層加熱器之陶瓷支座
TWI862222B (zh) 基於氣體脈衝的共享前驅物分佈系統及其使用方法
TW202340523A (zh) 用於平衡通至基板處理系統之多個站之氣體流的閥系統
US20240344201A1 (en) Showerhead temperature based deposition time compensation for thickness trending in pecvd deposition system
WO2025096119A1 (en) Vapor delivery system with charge volume container
TW202212619A (zh) 在基於氣體脈衝的前驅物分配系統中控制氣體壓力的方法