JP7421482B2 - パルス幅変調されたドーズ制御のためのシステムおよび方法 - Google Patents

パルス幅変調されたドーズ制御のためのシステムおよび方法 Download PDF

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Publication number
JP7421482B2
JP7421482B2 JP2020538754A JP2020538754A JP7421482B2 JP 7421482 B2 JP7421482 B2 JP 7421482B2 JP 2020538754 A JP2020538754 A JP 2020538754A JP 2020538754 A JP2020538754 A JP 2020538754A JP 7421482 B2 JP7421482 B2 JP 7421482B2
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Prior art keywords
valve
injector assemblies
processing system
injector
substrate processing
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JP2020535666A (ja
JP2020535666A5 (https=
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グレゴール・マリウシュ
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0612—Production flow monitoring, e.g. for increasing throughput
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/14—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with multiple outlet openings; with strainers in or outside the outlet opening
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/30—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to control volume of flow, e.g. with adjustable passages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Automation & Control Theory (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Pulse Circuits (AREA)
  • Radar Systems Or Details Thereof (AREA)
JP2020538754A 2017-09-26 2018-09-21 パルス幅変調されたドーズ制御のためのシステムおよび方法 Active JP7421482B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024002916A JP7754960B2 (ja) 2017-09-26 2024-01-12 パルス幅変調されたドーズ制御のためのシステムおよび方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762563129P 2017-09-26 2017-09-26
US62/563,129 2017-09-26
US201762590815P 2017-11-27 2017-11-27
US62/590,815 2017-11-27
PCT/US2018/052246 WO2019067323A1 (en) 2017-09-26 2018-09-21 DOSE CONTROL SYSTEMS AND METHODS MODULATED BY TIME PULSES

Related Child Applications (1)

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JP2024002916A Division JP7754960B2 (ja) 2017-09-26 2024-01-12 パルス幅変調されたドーズ制御のためのシステムおよび方法

Publications (3)

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JP2020535666A JP2020535666A (ja) 2020-12-03
JP2020535666A5 JP2020535666A5 (https=) 2021-11-04
JP7421482B2 true JP7421482B2 (ja) 2024-01-24

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JP2024002916A Active JP7754960B2 (ja) 2017-09-26 2024-01-12 パルス幅変調されたドーズ制御のためのシステムおよび方法

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Country Link
US (4) US11542598B2 (https=)
EP (3) EP3688794B1 (https=)
JP (2) JP7421482B2 (https=)
KR (3) KR20250139892A (https=)
CN (2) CN111164743B (https=)
SG (1) SG11202002686YA (https=)
TW (3) TWI829651B (https=)
WO (1) WO2019067323A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111164743B (zh) 2017-09-26 2025-06-17 朗姆研究公司 用于脉宽调制的剂量控制的系统及方法
TW202318493A (zh) * 2021-07-07 2023-05-01 美商英福康公司 用於沉積和蝕刻腔室的上游過程監視
US20240203695A1 (en) * 2022-12-16 2024-06-20 Applied Materials, Inc. Fast gas switching
KR20250148210A (ko) 2024-04-05 2025-10-14 주식회사 엘지에너지솔루션 배터리 팩 및 이를 포함하는 자동차

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003512519A (ja) 1999-10-20 2003-04-02 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 空間的に分解されたセンサを用いてウェハの均一性を制御するための方法および装置
JP2004511905A (ja) 2000-10-06 2004-04-15 ラム　リサーチ　コーポレーション 半導体処理のためのガス供給装置
JP2005347446A (ja) 2004-06-02 2005-12-15 Nec Electronics Corp 気相成長装置、薄膜の形成方法、および半導体装置の製造方法
US20120156363A1 (en) 2010-12-17 2012-06-21 Veeco Instruments Inc. Gas Injection System for Chemical Vapor Deposition Using Sequenced Valves
JP2017032305A (ja) 2015-07-29 2017-02-09 東京エレクトロン株式会社 ガス供給系のバルブのリークを検査する方法
WO2017160614A1 (en) 2016-03-15 2017-09-21 Applied Materials, Inc Methods and assemblies for gas flow ratio control

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4761269A (en) * 1986-06-12 1988-08-02 Crystal Specialties, Inc. Apparatus for depositing material on a substrate
US6197123B1 (en) * 1997-12-18 2001-03-06 Texas Instruments Incorporated Method for cleaning a process chamber used for manufacturing substrates during nonproduction intervals
JP3830670B2 (ja) * 1998-09-03 2006-10-04 三菱電機株式会社 半導体製造装置
JP2002535122A (ja) * 1999-01-20 2002-10-22 マイクロリス・コーポレーション 流れコントローラ
US6143080A (en) * 1999-02-02 2000-11-07 Silicon Valley Group Thermal Systems Llc Wafer processing reactor having a gas flow control system and method
US20040224504A1 (en) * 2000-06-23 2004-11-11 Gadgil Prasad N. Apparatus and method for plasma enhanced monolayer processing
US20030116089A1 (en) * 2001-12-04 2003-06-26 Walther Steven R. Plasma implantation system and method with target movement
US20030101935A1 (en) * 2001-12-04 2003-06-05 Walther Steven R. Dose uniformity control for plasma doping systems
US20040040502A1 (en) * 2002-08-29 2004-03-04 Micron Technology, Inc. Micromachines for delivering precursors and gases for film deposition
US20040040503A1 (en) * 2002-08-29 2004-03-04 Micron Technology, Inc. Micromachines for delivering precursors and gases for film deposition
US20040050325A1 (en) * 2002-09-12 2004-03-18 Samoilov Arkadii V. Apparatus and method for delivering process gas to a substrate processing system
US7628860B2 (en) * 2004-04-12 2009-12-08 Mks Instruments, Inc. Pulsed mass flow delivery system and method
US7228645B2 (en) * 2005-01-11 2007-06-12 Xuyen Ngoc Pham Multi-zone shower head for drying single semiconductor substrate
JP2006253696A (ja) 2005-03-10 2006-09-21 Asm America Inc ガスインジェクタ制御システム
US7846497B2 (en) 2007-02-26 2010-12-07 Applied Materials, Inc. Method and apparatus for controlling gas flow to a processing chamber
US8486191B2 (en) * 2009-04-07 2013-07-16 Asm America, Inc. Substrate reactor with adjustable injectors for mixing gases within reaction chamber
US9840778B2 (en) * 2012-06-01 2017-12-12 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma chamber having an upper electrode having controllable valves and a method of using the same
US9488315B2 (en) * 2013-03-15 2016-11-08 Applied Materials, Inc. Gas distribution apparatus for directional and proportional delivery of process gas to a process chamber
US9624805B2 (en) * 2014-08-26 2017-04-18 Caterpillar Inc. Aftertreatment system having dynamic independent injector control
US20170092470A1 (en) * 2015-09-28 2017-03-30 Applied Materials, Inc. Plasma reactor for processing a workpiece with an array of plasma point sources
US10256075B2 (en) * 2016-01-22 2019-04-09 Applied Materials, Inc. Gas splitting by time average injection into different zones by fast gas valves
US10403476B2 (en) 2016-11-09 2019-09-03 Lam Research Corporation Active showerhead
CN111164743B (zh) 2017-09-26 2025-06-17 朗姆研究公司 用于脉宽调制的剂量控制的系统及方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003512519A (ja) 1999-10-20 2003-04-02 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 空間的に分解されたセンサを用いてウェハの均一性を制御するための方法および装置
JP2004511905A (ja) 2000-10-06 2004-04-15 ラム　リサーチ　コーポレーション 半導体処理のためのガス供給装置
KR100725615B1 (ko) 2000-10-06 2007-06-07 램 리서치 코포레이션 반도체 처리 공정을 위한 가스 분산 장치
JP2005347446A (ja) 2004-06-02 2005-12-15 Nec Electronics Corp 気相成長装置、薄膜の形成方法、および半導体装置の製造方法
US20120156363A1 (en) 2010-12-17 2012-06-21 Veeco Instruments Inc. Gas Injection System for Chemical Vapor Deposition Using Sequenced Valves
JP2017032305A (ja) 2015-07-29 2017-02-09 東京エレクトロン株式会社 ガス供給系のバルブのリークを検査する方法
WO2017160614A1 (en) 2016-03-15 2017-09-21 Applied Materials, Inc Methods and assemblies for gas flow ratio control

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Publication number Publication date
JP2024038344A (ja) 2024-03-19
EP4391011A3 (en) 2024-11-06
EP4391011A2 (en) 2024-06-26
TWI829651B (zh) 2024-01-21
CN111164743A (zh) 2020-05-15
US20250179634A1 (en) 2025-06-05
EP4235743A3 (en) 2023-11-08
JP2020535666A (ja) 2020-12-03
EP4235743B1 (en) 2025-03-12
US20200270748A1 (en) 2020-08-27
TWI907178B (zh) 2025-12-01
TW201923930A (zh) 2019-06-16
EP4235743A2 (en) 2023-08-30
TW202527184A (zh) 2025-07-01
EP3688794A4 (en) 2021-07-07
KR20200049877A (ko) 2020-05-08
KR20250139892A (ko) 2025-09-23
EP3688794B1 (en) 2023-06-28
JP7754960B2 (ja) 2025-10-15
US12215421B2 (en) 2025-02-04
TWI869129B (zh) 2025-01-01
TW202427648A (zh) 2024-07-01
EP3688794A1 (en) 2020-08-05
WO2019067323A1 (en) 2019-04-04
US20240093365A1 (en) 2024-03-21
CN120854322A (zh) 2025-10-28
US20230160065A1 (en) 2023-05-25
KR20240046651A (ko) 2024-04-09
KR102861934B1 (ko) 2025-09-18
US11542598B2 (en) 2023-01-03
CN111164743B (zh) 2025-06-17
KR102654894B1 (ko) 2024-04-03
US11834736B2 (en) 2023-12-05
SG11202002686YA (en) 2020-04-29

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