CN111164743B - 用于脉宽调制的剂量控制的系统及方法 - Google Patents

用于脉宽调制的剂量控制的系统及方法 Download PDF

Info

Publication number
CN111164743B
CN111164743B CN201880062506.1A CN201880062506A CN111164743B CN 111164743 B CN111164743 B CN 111164743B CN 201880062506 A CN201880062506 A CN 201880062506A CN 111164743 B CN111164743 B CN 111164743B
Authority
CN
China
Prior art keywords
valve
pulse width
dose
assemblies
injector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201880062506.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN111164743A (zh
Inventor
马里施·格雷戈尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Priority to CN202510700386.5A priority Critical patent/CN120854322A/zh
Publication of CN111164743A publication Critical patent/CN111164743A/zh
Application granted granted Critical
Publication of CN111164743B publication Critical patent/CN111164743B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0612—Production flow monitoring, e.g. for increasing throughput
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/14—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with multiple outlet openings; with strainers in or outside the outlet opening
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/30—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to control volume of flow, e.g. with adjustable passages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Automation & Control Theory (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Pulse Circuits (AREA)
  • Radar Systems Or Details Thereof (AREA)
CN201880062506.1A 2017-09-26 2018-09-21 用于脉宽调制的剂量控制的系统及方法 Active CN111164743B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202510700386.5A CN120854322A (zh) 2017-09-26 2018-09-21 用于脉宽调制的剂量控制的系统及方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762563129P 2017-09-26 2017-09-26
US62/563,129 2017-09-26
US201762590815P 2017-11-27 2017-11-27
US62/590,815 2017-11-27
PCT/US2018/052246 WO2019067323A1 (en) 2017-09-26 2018-09-21 DOSE CONTROL SYSTEMS AND METHODS MODULATED BY TIME PULSES

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202510700386.5A Division CN120854322A (zh) 2017-09-26 2018-09-21 用于脉宽调制的剂量控制的系统及方法

Publications (2)

Publication Number Publication Date
CN111164743A CN111164743A (zh) 2020-05-15
CN111164743B true CN111164743B (zh) 2025-06-17

Family

ID=65903780

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201880062506.1A Active CN111164743B (zh) 2017-09-26 2018-09-21 用于脉宽调制的剂量控制的系统及方法
CN202510700386.5A Pending CN120854322A (zh) 2017-09-26 2018-09-21 用于脉宽调制的剂量控制的系统及方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202510700386.5A Pending CN120854322A (zh) 2017-09-26 2018-09-21 用于脉宽调制的剂量控制的系统及方法

Country Status (8)

Country Link
US (4) US11542598B2 (https=)
EP (3) EP3688794B1 (https=)
JP (2) JP7421482B2 (https=)
KR (3) KR20250139892A (https=)
CN (2) CN111164743B (https=)
SG (1) SG11202002686YA (https=)
TW (3) TWI829651B (https=)
WO (1) WO2019067323A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111164743B (zh) 2017-09-26 2025-06-17 朗姆研究公司 用于脉宽调制的剂量控制的系统及方法
TW202318493A (zh) * 2021-07-07 2023-05-01 美商英福康公司 用於沉積和蝕刻腔室的上游過程監視
US20240203695A1 (en) * 2022-12-16 2024-06-20 Applied Materials, Inc. Fast gas switching
KR20250148210A (ko) 2024-04-05 2025-10-14 주식회사 엘지에너지솔루션 배터리 팩 및 이를 포함하는 자동차

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4761269A (en) * 1986-06-12 1988-08-02 Crystal Specialties, Inc. Apparatus for depositing material on a substrate
US6197123B1 (en) * 1997-12-18 2001-03-06 Texas Instruments Incorporated Method for cleaning a process chamber used for manufacturing substrates during nonproduction intervals
JP3830670B2 (ja) * 1998-09-03 2006-10-04 三菱電機株式会社 半導体製造装置
JP2002535122A (ja) * 1999-01-20 2002-10-22 マイクロリス・コーポレーション 流れコントローラ
US6143080A (en) * 1999-02-02 2000-11-07 Silicon Valley Group Thermal Systems Llc Wafer processing reactor having a gas flow control system and method
US6706541B1 (en) * 1999-10-20 2004-03-16 Advanced Micro Devices, Inc. Method and apparatus for controlling wafer uniformity using spatially resolved sensors
US20040224504A1 (en) * 2000-06-23 2004-11-11 Gadgil Prasad N. Apparatus and method for plasma enhanced monolayer processing
US6333272B1 (en) 2000-10-06 2001-12-25 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US20030116089A1 (en) * 2001-12-04 2003-06-26 Walther Steven R. Plasma implantation system and method with target movement
US20030101935A1 (en) * 2001-12-04 2003-06-05 Walther Steven R. Dose uniformity control for plasma doping systems
US20040040502A1 (en) * 2002-08-29 2004-03-04 Micron Technology, Inc. Micromachines for delivering precursors and gases for film deposition
US20040040503A1 (en) * 2002-08-29 2004-03-04 Micron Technology, Inc. Micromachines for delivering precursors and gases for film deposition
US20040050325A1 (en) * 2002-09-12 2004-03-18 Samoilov Arkadii V. Apparatus and method for delivering process gas to a substrate processing system
US7628860B2 (en) * 2004-04-12 2009-12-08 Mks Instruments, Inc. Pulsed mass flow delivery system and method
JP4502189B2 (ja) * 2004-06-02 2010-07-14 ルネサスエレクトロニクス株式会社 薄膜の形成方法および半導体装置の製造方法
US7228645B2 (en) * 2005-01-11 2007-06-12 Xuyen Ngoc Pham Multi-zone shower head for drying single semiconductor substrate
JP2006253696A (ja) 2005-03-10 2006-09-21 Asm America Inc ガスインジェクタ制御システム
US7846497B2 (en) 2007-02-26 2010-12-07 Applied Materials, Inc. Method and apparatus for controlling gas flow to a processing chamber
US8486191B2 (en) * 2009-04-07 2013-07-16 Asm America, Inc. Substrate reactor with adjustable injectors for mixing gases within reaction chamber
US9303319B2 (en) * 2010-12-17 2016-04-05 Veeco Instruments Inc. Gas injection system for chemical vapor deposition using sequenced valves
US9840778B2 (en) * 2012-06-01 2017-12-12 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma chamber having an upper electrode having controllable valves and a method of using the same
US9488315B2 (en) * 2013-03-15 2016-11-08 Applied Materials, Inc. Gas distribution apparatus for directional and proportional delivery of process gas to a process chamber
US9624805B2 (en) * 2014-08-26 2017-04-18 Caterpillar Inc. Aftertreatment system having dynamic independent injector control
JP6502779B2 (ja) * 2015-07-29 2019-04-17 東京エレクトロン株式会社 ガス供給系のバルブのリークを検査する方法
US20170092470A1 (en) * 2015-09-28 2017-03-30 Applied Materials, Inc. Plasma reactor for processing a workpiece with an array of plasma point sources
US10256075B2 (en) * 2016-01-22 2019-04-09 Applied Materials, Inc. Gas splitting by time average injection into different zones by fast gas valves
US10453721B2 (en) * 2016-03-15 2019-10-22 Applied Materials, Inc. Methods and assemblies for gas flow ratio control
US10403476B2 (en) 2016-11-09 2019-09-03 Lam Research Corporation Active showerhead
CN111164743B (zh) 2017-09-26 2025-06-17 朗姆研究公司 用于脉宽调制的剂量控制的系统及方法

Also Published As

Publication number Publication date
JP2024038344A (ja) 2024-03-19
EP4391011A3 (en) 2024-11-06
EP4391011A2 (en) 2024-06-26
TWI829651B (zh) 2024-01-21
CN111164743A (zh) 2020-05-15
US20250179634A1 (en) 2025-06-05
EP4235743A3 (en) 2023-11-08
JP2020535666A (ja) 2020-12-03
EP4235743B1 (en) 2025-03-12
US20200270748A1 (en) 2020-08-27
TWI907178B (zh) 2025-12-01
TW201923930A (zh) 2019-06-16
EP4235743A2 (en) 2023-08-30
TW202527184A (zh) 2025-07-01
EP3688794A4 (en) 2021-07-07
KR20200049877A (ko) 2020-05-08
KR20250139892A (ko) 2025-09-23
EP3688794B1 (en) 2023-06-28
JP7754960B2 (ja) 2025-10-15
US12215421B2 (en) 2025-02-04
TWI869129B (zh) 2025-01-01
TW202427648A (zh) 2024-07-01
EP3688794A1 (en) 2020-08-05
WO2019067323A1 (en) 2019-04-04
US20240093365A1 (en) 2024-03-21
CN120854322A (zh) 2025-10-28
US20230160065A1 (en) 2023-05-25
JP7421482B2 (ja) 2024-01-24
KR20240046651A (ko) 2024-04-09
KR102861934B1 (ko) 2025-09-18
US11542598B2 (en) 2023-01-03
KR102654894B1 (ko) 2024-04-03
US11834736B2 (en) 2023-12-05
SG11202002686YA (en) 2020-04-29

Similar Documents

Publication Publication Date Title
JP7754960B2 (ja) パルス幅変調されたドーズ制御のためのシステムおよび方法
KR102688484B1 (ko) 비말 동반된 증기를 측정하기 위한 시스템들 및 방법들
CN107564789B (zh) 用于基于rf功率的衬底支撑件前馈温度控制的系统与方法
KR20250029847A (ko) 복수의 가스 주입 지점들 및 듀얼 주입기를 포함한 기판 프로세싱 챔버
CN110088885B (zh) 向下游室传送自由基和前体气体以实现远程等离子体膜沉积的有热控制的集成喷头
KR102503328B1 (ko) 다운스트림 반응기에서 에지 에칭 레이트 제어를 위한 조정가능한 측면 가스 플레넘
CN112106181B (zh) 使用电压和电流测量来控制双区陶瓷基座
JP7546483B2 (ja) 遠隔プラズマ膜蒸着を可能にするためにラジカルおよび前駆体ガスを下流チャンバに供給するための改良された孔パターンを備える統合シャワーヘッド
CN113169109B (zh) 用于增进热均匀性的具有多层加热器的陶瓷基座
TW202340523A (zh) 用於平衡通至基板處理系統之多個站之氣體流的閥系統
CN117716066A (zh) Pecvd沉积系统中对厚度趋势的基于喷头温度的沉积时间补偿

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant