KR20250139892A - 펄스 폭 조정된 도즈 제어를 위한 시스템들 및 방법들 - Google Patents

펄스 폭 조정된 도즈 제어를 위한 시스템들 및 방법들

Info

Publication number
KR20250139892A
KR20250139892A KR1020257030846A KR20257030846A KR20250139892A KR 20250139892 A KR20250139892 A KR 20250139892A KR 1020257030846 A KR1020257030846 A KR 1020257030846A KR 20257030846 A KR20257030846 A KR 20257030846A KR 20250139892 A KR20250139892 A KR 20250139892A
Authority
KR
South Korea
Prior art keywords
injector assemblies
injector
valve
gas
valves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257030846A
Other languages
English (en)
Korean (ko)
Inventor
마리우츠 그레고르
Original Assignee
램 리써치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20250139892A publication Critical patent/KR20250139892A/ko
Pending legal-status Critical Current

Links

Classifications

    • H01L21/67276—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0612—Production flow monitoring, e.g. for increasing throughput
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/14—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with multiple outlet openings; with strainers in or outside the outlet opening
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/30—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to control volume of flow, e.g. with adjustable passages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H01L21/67017—
    • H01L21/67248—
    • H01L21/67253—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Automation & Control Theory (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Pulse Circuits (AREA)
  • Radar Systems Or Details Thereof (AREA)
KR1020257030846A 2017-09-26 2018-09-21 펄스 폭 조정된 도즈 제어를 위한 시스템들 및 방법들 Pending KR20250139892A (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201762563129P 2017-09-26 2017-09-26
US62/563,129 2017-09-26
US201762590815P 2017-11-27 2017-11-27
US62/590,815 2017-11-27
KR1020247010982A KR102861934B1 (ko) 2017-09-26 2018-09-21 펄스 폭 조정된 도즈 제어를 위한 시스템들 및 방법들
PCT/US2018/052246 WO2019067323A1 (en) 2017-09-26 2018-09-21 DOSE CONTROL SYSTEMS AND METHODS MODULATED BY TIME PULSES

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020247010982A Division KR102861934B1 (ko) 2017-09-26 2018-09-21 펄스 폭 조정된 도즈 제어를 위한 시스템들 및 방법들

Publications (1)

Publication Number Publication Date
KR20250139892A true KR20250139892A (ko) 2025-09-23

Family

ID=65903780

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020257030846A Pending KR20250139892A (ko) 2017-09-26 2018-09-21 펄스 폭 조정된 도즈 제어를 위한 시스템들 및 방법들
KR1020247010982A Active KR102861934B1 (ko) 2017-09-26 2018-09-21 펄스 폭 조정된 도즈 제어를 위한 시스템들 및 방법들
KR1020207012048A Active KR102654894B1 (ko) 2017-09-26 2018-09-21 펄스 폭 조정된 도즈 제어를 위한 시스템들 및 방법들

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020247010982A Active KR102861934B1 (ko) 2017-09-26 2018-09-21 펄스 폭 조정된 도즈 제어를 위한 시스템들 및 방법들
KR1020207012048A Active KR102654894B1 (ko) 2017-09-26 2018-09-21 펄스 폭 조정된 도즈 제어를 위한 시스템들 및 방법들

Country Status (8)

Country Link
US (4) US11542598B2 (https=)
EP (3) EP3688794B1 (https=)
JP (2) JP7421482B2 (https=)
KR (3) KR20250139892A (https=)
CN (2) CN111164743B (https=)
SG (1) SG11202002686YA (https=)
TW (3) TWI829651B (https=)
WO (1) WO2019067323A1 (https=)

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CN111164743B (zh) 2017-09-26 2025-06-17 朗姆研究公司 用于脉宽调制的剂量控制的系统及方法
TW202318493A (zh) * 2021-07-07 2023-05-01 美商英福康公司 用於沉積和蝕刻腔室的上游過程監視
US20240203695A1 (en) * 2022-12-16 2024-06-20 Applied Materials, Inc. Fast gas switching
KR20250148210A (ko) 2024-04-05 2025-10-14 주식회사 엘지에너지솔루션 배터리 팩 및 이를 포함하는 자동차

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Also Published As

Publication number Publication date
JP2024038344A (ja) 2024-03-19
EP4391011A3 (en) 2024-11-06
EP4391011A2 (en) 2024-06-26
TWI829651B (zh) 2024-01-21
CN111164743A (zh) 2020-05-15
US20250179634A1 (en) 2025-06-05
EP4235743A3 (en) 2023-11-08
JP2020535666A (ja) 2020-12-03
EP4235743B1 (en) 2025-03-12
US20200270748A1 (en) 2020-08-27
TWI907178B (zh) 2025-12-01
TW201923930A (zh) 2019-06-16
EP4235743A2 (en) 2023-08-30
TW202527184A (zh) 2025-07-01
EP3688794A4 (en) 2021-07-07
KR20200049877A (ko) 2020-05-08
EP3688794B1 (en) 2023-06-28
JP7754960B2 (ja) 2025-10-15
US12215421B2 (en) 2025-02-04
TWI869129B (zh) 2025-01-01
TW202427648A (zh) 2024-07-01
EP3688794A1 (en) 2020-08-05
WO2019067323A1 (en) 2019-04-04
US20240093365A1 (en) 2024-03-21
CN120854322A (zh) 2025-10-28
US20230160065A1 (en) 2023-05-25
JP7421482B2 (ja) 2024-01-24
KR20240046651A (ko) 2024-04-09
KR102861934B1 (ko) 2025-09-18
US11542598B2 (en) 2023-01-03
CN111164743B (zh) 2025-06-17
KR102654894B1 (ko) 2024-04-03
US11834736B2 (en) 2023-12-05
SG11202002686YA (en) 2020-04-29

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