TWI902792B - 化學品輸送系統的加熱器設計方案 - Google Patents

化學品輸送系統的加熱器設計方案

Info

Publication number
TWI902792B
TWI902792B TW110115707A TW110115707A TWI902792B TW I902792 B TWI902792 B TW I902792B TW 110115707 A TW110115707 A TW 110115707A TW 110115707 A TW110115707 A TW 110115707A TW I902792 B TWI902792 B TW I902792B
Authority
TW
Taiwan
Prior art keywords
temperature
heating element
gas
gas line
chemical
Prior art date
Application number
TW110115707A
Other languages
English (en)
Chinese (zh)
Other versions
TW202208670A (zh
Inventor
戴維德 沙瑪
克利斯多福 Ｊ 勞伊
潘亞 王塞納克運
查理 達瑪索
馬文 克萊頓 布雷斯
Original Assignee
美商蘭姆研究公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商蘭姆研究公司 filed Critical 美商蘭姆研究公司
Publication of TW202208670A publication Critical patent/TW202208670A/zh
Application granted granted Critical
Publication of TWI902792B publication Critical patent/TWI902792B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
TW110115707A 2020-04-30 2021-04-30 化學品輸送系統的加熱器設計方案 TWI902792B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202063018288P 2020-04-30 2020-04-30
US63/018,288 2020-04-30

Publications (2)

Publication Number Publication Date
TW202208670A TW202208670A (zh) 2022-03-01
TWI902792B true TWI902792B (zh) 2025-11-01

Family

ID=78332189

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110115707A TWI902792B (zh) 2020-04-30 2021-04-30 化學品輸送系統的加熱器設計方案

Country Status (6)

Country Link
US (1) US12460294B2 (https=)
JP (1) JP7691439B2 (https=)
KR (1) KR20230005931A (https=)
CN (1) CN115485412A (https=)
TW (1) TWI902792B (https=)
WO (1) WO2021222292A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI129734B (en) * 2019-04-25 2022-08-15 Beneq Oy Precursor supply chamber
JP7691439B2 (ja) 2020-04-30 2025-06-11 ラム リサーチ コーポレーション 化学物質送達システム用のヒーター設計ソリューション
CN114318300B (zh) * 2021-12-30 2024-05-10 拓荆科技股份有限公司 一种半导体加工设备及其反应腔室、工艺管路穿腔模块
KR102728765B1 (ko) 2024-01-10 2024-11-13 포이스주식회사 기체상태 화학약품 공급라인의 온도제어시스템
KR102770119B1 (ko) 2024-01-10 2025-02-20 포이스주식회사 기체상태 화학약품 공급라인의 퍼지시스템

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI518198B (zh) * 2014-04-09 2016-01-21 中央研究院 製備薄膜之系統

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US3651240A (en) * 1969-01-31 1972-03-21 Trw Inc Heat transfer device
US3677329A (en) * 1970-11-16 1972-07-18 Trw Inc Annular heat pipe
JPH02210822A (ja) 1989-02-10 1990-08-22 Toshiba Corp 気相成長装置
US5451258A (en) 1994-05-11 1995-09-19 Materials Research Corporation Apparatus and method for improved delivery of vaporized reactant gases to a reaction chamber
JPH0897160A (ja) 1994-09-29 1996-04-12 Fujitsu Ltd ガス吹き出し装置及びガス混合装置及び半導体装置製造方法
US5714738A (en) * 1995-07-10 1998-02-03 Watlow Electric Manufacturing Co. Apparatus and methods of making and using heater apparatus for heating an object having two-dimensional or three-dimensional curvature
WO2000036640A1 (en) 1998-12-16 2000-06-22 Tokyo Electron Limited Method of forming thin film
US6915592B2 (en) 2002-07-29 2005-07-12 Applied Materials, Inc. Method and apparatus for generating gas to a processing chamber
KR20080070893A (ko) 2007-01-29 2008-08-01 (주)티티에스 블록히터가 장착된 가스라인을 갖는 반도체 제조장치
JP2009084625A (ja) 2007-09-28 2009-04-23 Tokyo Electron Ltd 原料ガスの供給システム及び成膜装置
KR101084275B1 (ko) 2009-09-22 2011-11-16 삼성모바일디스플레이주식회사 소스 가스 공급 유닛, 이를 구비하는 증착 장치 및 방법
JP6627464B2 (ja) 2015-03-30 2020-01-08 東京エレクトロン株式会社 原料ガス供給装置及び成膜装置
US11421320B2 (en) * 2017-12-07 2022-08-23 Entegris, Inc. Chemical delivery system and method of operating the chemical delivery system
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US11183400B2 (en) * 2018-08-08 2021-11-23 Lam Research Corporation Progressive heating of components of substrate processing systems using TCR element-based heaters
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JP7691439B2 (ja) 2020-04-30 2025-06-11 ラム リサーチ コーポレーション 化学物質送達システム用のヒーター設計ソリューション

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* Cited by examiner, † Cited by third party
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TWI518198B (zh) * 2014-04-09 2016-01-21 中央研究院 製備薄膜之系統

Also Published As

Publication number Publication date
JP2023523945A (ja) 2023-06-08
JP7691439B2 (ja) 2025-06-11
US12460294B2 (en) 2025-11-04
CN115485412A (zh) 2022-12-16
WO2021222292A1 (en) 2021-11-04
KR20230005931A (ko) 2023-01-10
TW202208670A (zh) 2022-03-01
US20230175128A1 (en) 2023-06-08

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