JP7691439B2 - 化学物質送達システム用のヒーター設計ソリューション - Google Patents

化学物質送達システム用のヒーター設計ソリューション Download PDF

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Publication number
JP7691439B2
JP7691439B2 JP2022564501A JP2022564501A JP7691439B2 JP 7691439 B2 JP7691439 B2 JP 7691439B2 JP 2022564501 A JP2022564501 A JP 2022564501A JP 2022564501 A JP2022564501 A JP 2022564501A JP 7691439 B2 JP7691439 B2 JP 7691439B2
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Prior art keywords
gas line
temperature
oven
heating element
heating
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JP2022564501A
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Japanese (ja)
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JP2023523945A (ja
JPWO2021222292A5 (https=
JP2023523945A5 (https=
Inventor
シャルマ・ダヴィンダー
ラウ・クリストファー・ジェイ．
ウォングセナクム・パンヤ
ダマソ・チャーリー
ブリース・マーヴィン・クレイトン
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Lam Research Corp
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Lam Research Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2022564501A 2020-04-30 2021-04-27 化学物質送達システム用のヒーター設計ソリューション Active JP7691439B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063018288P 2020-04-30 2020-04-30
US63/018,288 2020-04-30
PCT/US2021/029452 WO2021222292A1 (en) 2020-04-30 2021-04-27 Heater design solutions for chemical delivery systems

Publications (4)

Publication Number Publication Date
JP2023523945A JP2023523945A (ja) 2023-06-08
JPWO2021222292A5 JPWO2021222292A5 (https=) 2024-05-09
JP2023523945A5 JP2023523945A5 (https=) 2024-05-09
JP7691439B2 true JP7691439B2 (ja) 2025-06-11

Family

ID=78332189

Family Applications (1)

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JP2022564501A Active JP7691439B2 (ja) 2020-04-30 2021-04-27 化学物質送達システム用のヒーター設計ソリューション

Country Status (6)

Country Link
US (1) US12460294B2 (https=)
JP (1) JP7691439B2 (https=)
KR (1) KR20230005931A (https=)
CN (1) CN115485412A (https=)
TW (1) TWI902792B (https=)
WO (1) WO2021222292A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI129734B (en) * 2019-04-25 2022-08-15 Beneq Oy Precursor supply chamber
CN115485412A (zh) 2020-04-30 2022-12-16 朗姆研究公司 用于化学品输送系统的加热器设计方案
CN114318300B (zh) * 2021-12-30 2024-05-10 拓荆科技股份有限公司 一种半导体加工设备及其反应腔室、工艺管路穿腔模块
KR102728765B1 (ko) 2024-01-10 2024-11-13 포이스주식회사 기체상태 화학약품 공급라인의 온도제어시스템
KR102770119B1 (ko) 2024-01-10 2025-02-20 포이스주식회사 기체상태 화학약품 공급라인의 퍼지시스템

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000036640A1 (en) 1998-12-16 2000-06-22 Tokyo Electron Limited Method of forming thin film
JP2009084625A (ja) 2007-09-28 2009-04-23 Tokyo Electron Ltd 原料ガスの供給システム及び成膜装置
JP2016191140A (ja) 2015-03-30 2016-11-10 東京エレクトロン株式会社 原料ガス供給装置及び成膜装置

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US3651240A (en) * 1969-01-31 1972-03-21 Trw Inc Heat transfer device
US3677329A (en) * 1970-11-16 1972-07-18 Trw Inc Annular heat pipe
JPH02210822A (ja) 1989-02-10 1990-08-22 Toshiba Corp 気相成長装置
US5451258A (en) 1994-05-11 1995-09-19 Materials Research Corporation Apparatus and method for improved delivery of vaporized reactant gases to a reaction chamber
JPH0897160A (ja) 1994-09-29 1996-04-12 Fujitsu Ltd ガス吹き出し装置及びガス混合装置及び半導体装置製造方法
US5714738A (en) * 1995-07-10 1998-02-03 Watlow Electric Manufacturing Co. Apparatus and methods of making and using heater apparatus for heating an object having two-dimensional or three-dimensional curvature
US6915592B2 (en) 2002-07-29 2005-07-12 Applied Materials, Inc. Method and apparatus for generating gas to a processing chamber
KR20080070893A (ko) 2007-01-29 2008-08-01 (주)티티에스 블록히터가 장착된 가스라인을 갖는 반도체 제조장치
KR101084275B1 (ko) 2009-09-22 2011-11-16 삼성모바일디스플레이주식회사 소스 가스 공급 유닛, 이를 구비하는 증착 장치 및 방법
TWI518198B (zh) 2014-04-09 2016-01-21 中央研究院 製備薄膜之系統
US11421320B2 (en) * 2017-12-07 2022-08-23 Entegris, Inc. Chemical delivery system and method of operating the chemical delivery system
US10975470B2 (en) * 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11183400B2 (en) 2018-08-08 2021-11-23 Lam Research Corporation Progressive heating of components of substrate processing systems using TCR element-based heaters
KR20200101141A (ko) * 2019-02-19 2020-08-27 고려대학교 산학협력단 전구체 소스 공급을 위한 금속블록 결합형 히터 어셈블리를 포함하는 증착 장치
CN115485412A (zh) 2020-04-30 2022-12-16 朗姆研究公司 用于化学品输送系统的加热器设计方案

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000036640A1 (en) 1998-12-16 2000-06-22 Tokyo Electron Limited Method of forming thin film
JP2009084625A (ja) 2007-09-28 2009-04-23 Tokyo Electron Ltd 原料ガスの供給システム及び成膜装置
JP2016191140A (ja) 2015-03-30 2016-11-10 東京エレクトロン株式会社 原料ガス供給装置及び成膜装置

Also Published As

Publication number Publication date
KR20230005931A (ko) 2023-01-10
JP2023523945A (ja) 2023-06-08
US20230175128A1 (en) 2023-06-08
WO2021222292A1 (en) 2021-11-04
CN115485412A (zh) 2022-12-16
TWI902792B (zh) 2025-11-01
TW202208670A (zh) 2022-03-01
US12460294B2 (en) 2025-11-04

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