KR20230005931A - 화학 물질 전달 시스템들을 위한 히터 설계 솔루션들 - Google Patents

화학 물질 전달 시스템들을 위한 히터 설계 솔루션들 Download PDF

Info

Publication number
KR20230005931A
KR20230005931A KR1020227041952A KR20227041952A KR20230005931A KR 20230005931 A KR20230005931 A KR 20230005931A KR 1020227041952 A KR1020227041952 A KR 1020227041952A KR 20227041952 A KR20227041952 A KR 20227041952A KR 20230005931 A KR20230005931 A KR 20230005931A
Authority
KR
South Korea
Prior art keywords
temperature
oven
gas line
heating element
canister
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020227041952A
Other languages
English (en)
Korean (ko)
Inventor
다빈더 샤르마
크리스토퍼 제이. 라우
판야 웡세나쿰
찰리 다마소
마빈 클레이턴 브리스
Original Assignee
램 리써치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20230005931A publication Critical patent/KR20230005931A/ko
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
KR1020227041952A 2020-04-30 2021-04-27 화학 물질 전달 시스템들을 위한 히터 설계 솔루션들 Pending KR20230005931A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063018288P 2020-04-30 2020-04-30
US63/018,288 2020-04-30
PCT/US2021/029452 WO2021222292A1 (en) 2020-04-30 2021-04-27 Heater design solutions for chemical delivery systems

Publications (1)

Publication Number Publication Date
KR20230005931A true KR20230005931A (ko) 2023-01-10

Family

ID=78332189

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227041952A Pending KR20230005931A (ko) 2020-04-30 2021-04-27 화학 물질 전달 시스템들을 위한 히터 설계 솔루션들

Country Status (6)

Country Link
US (1) US12460294B2 (https=)
JP (1) JP7691439B2 (https=)
KR (1) KR20230005931A (https=)
CN (1) CN115485412A (https=)
TW (1) TWI902792B (https=)
WO (1) WO2021222292A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102728765B1 (ko) 2024-01-10 2024-11-13 포이스주식회사 기체상태 화학약품 공급라인의 온도제어시스템
KR102770119B1 (ko) 2024-01-10 2025-02-20 포이스주식회사 기체상태 화학약품 공급라인의 퍼지시스템

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI129734B (en) * 2019-04-25 2022-08-15 Beneq Oy Precursor supply chamber
CN115485412A (zh) 2020-04-30 2022-12-16 朗姆研究公司 用于化学品输送系统的加热器设计方案
CN114318300B (zh) * 2021-12-30 2024-05-10 拓荆科技股份有限公司 一种半导体加工设备及其反应腔室、工艺管路穿腔模块

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3651240A (en) * 1969-01-31 1972-03-21 Trw Inc Heat transfer device
US3677329A (en) * 1970-11-16 1972-07-18 Trw Inc Annular heat pipe
JPH02210822A (ja) 1989-02-10 1990-08-22 Toshiba Corp 気相成長装置
US5451258A (en) 1994-05-11 1995-09-19 Materials Research Corporation Apparatus and method for improved delivery of vaporized reactant gases to a reaction chamber
JPH0897160A (ja) 1994-09-29 1996-04-12 Fujitsu Ltd ガス吹き出し装置及びガス混合装置及び半導体装置製造方法
US5714738A (en) * 1995-07-10 1998-02-03 Watlow Electric Manufacturing Co. Apparatus and methods of making and using heater apparatus for heating an object having two-dimensional or three-dimensional curvature
KR100392047B1 (ko) 1998-12-16 2003-07-23 동경 엘렉트론 주식회사 박막 형성 방법
US6915592B2 (en) 2002-07-29 2005-07-12 Applied Materials, Inc. Method and apparatus for generating gas to a processing chamber
KR20080070893A (ko) 2007-01-29 2008-08-01 (주)티티에스 블록히터가 장착된 가스라인을 갖는 반도체 제조장치
JP2009084625A (ja) * 2007-09-28 2009-04-23 Tokyo Electron Ltd 原料ガスの供給システム及び成膜装置
KR101084275B1 (ko) 2009-09-22 2011-11-16 삼성모바일디스플레이주식회사 소스 가스 공급 유닛, 이를 구비하는 증착 장치 및 방법
TWI518198B (zh) 2014-04-09 2016-01-21 中央研究院 製備薄膜之系統
JP6627464B2 (ja) 2015-03-30 2020-01-08 東京エレクトロン株式会社 原料ガス供給装置及び成膜装置
US11421320B2 (en) * 2017-12-07 2022-08-23 Entegris, Inc. Chemical delivery system and method of operating the chemical delivery system
US10975470B2 (en) * 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11183400B2 (en) 2018-08-08 2021-11-23 Lam Research Corporation Progressive heating of components of substrate processing systems using TCR element-based heaters
KR20200101141A (ko) * 2019-02-19 2020-08-27 고려대학교 산학협력단 전구체 소스 공급을 위한 금속블록 결합형 히터 어셈블리를 포함하는 증착 장치
CN115485412A (zh) 2020-04-30 2022-12-16 朗姆研究公司 用于化学品输送系统的加热器设计方案

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102728765B1 (ko) 2024-01-10 2024-11-13 포이스주식회사 기체상태 화학약품 공급라인의 온도제어시스템
KR102770119B1 (ko) 2024-01-10 2025-02-20 포이스주식회사 기체상태 화학약품 공급라인의 퍼지시스템

Also Published As

Publication number Publication date
JP2023523945A (ja) 2023-06-08
US20230175128A1 (en) 2023-06-08
WO2021222292A1 (en) 2021-11-04
CN115485412A (zh) 2022-12-16
TWI902792B (zh) 2025-11-01
TW202208670A (zh) 2022-03-01
JP7691439B2 (ja) 2025-06-11
US12460294B2 (en) 2025-11-04

Similar Documents

Publication Publication Date Title
US12460294B2 (en) Heater design solutions for chemical delivery systems
KR102774227B1 (ko) 복수의 가스 주입 지점들 및 듀얼 주입기를 포함한 기판 프로세싱 챔버
KR102528434B1 (ko) 비말 동반된 증기를 측정하기 위한 시스템들 및 방법들
TWI744323B (zh) 具有不同的加熱器跡線材料之層疊式加熱器
TWI893498B (zh) 氣體分配器及氣體混合器
TW201916166A (zh) 批次式電漿基板處理裝置
CN111293068A (zh) 基板支撑器、基板处理装置、基板处理系统及检测基板支撑器中的粘合剂的侵蚀的方法
JP2021163902A (ja) 載置台および基板処理装置
US12473638B2 (en) Liquid precursor vaporizer
KR102508674B1 (ko) 간헐적인 정체 플로우
KR102886353B1 (ko) 저온 기판 보호 층 생성
KR20260021778A (ko) 복수의 fov (flow-over-vapor) 앰플 전달 시스템들
TW202024386A (zh) 用於提供站對站均勻性的方法及設備
US20250062106A1 (en) Remote plasma clean (rpc) delivery inlet adapter
WO2025072099A1 (en) Reconfigurable advanced modular precursor delivery system (ampds)
WO2025101727A1 (en) Dual plenum showerhead

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D21 Rejection of application intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D21-EXM-PE0902 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902