TWI886377B - 薄膜電晶體、顯示裝置、電子設備及薄膜電晶體的製造方法 - Google Patents

薄膜電晶體、顯示裝置、電子設備及薄膜電晶體的製造方法 Download PDF

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Publication number
TWI886377B
TWI886377B TW111106180A TW111106180A TWI886377B TW I886377 B TWI886377 B TW I886377B TW 111106180 A TW111106180 A TW 111106180A TW 111106180 A TW111106180 A TW 111106180A TW I886377 B TWI886377 B TW I886377B
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Taiwan
Prior art keywords
channel
thin film
film transistor
metal oxide
semiconductor layer
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TW111106180A
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English (en)
Chinese (zh)
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TW202240919A (zh
Inventor
細野秀雄
金正煥
雲見日出也
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國立研究開發法人科學技術振興機構
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Thin Film Transistor (AREA)
TW111106180A 2021-02-22 2022-02-21 薄膜電晶體、顯示裝置、電子設備及薄膜電晶體的製造方法 TWI886377B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2021-026653 2021-02-22
JP2021026653 2021-02-22
JP2021174071 2021-10-25
JP2021-174071 2021-10-25

Publications (2)

Publication Number Publication Date
TW202240919A TW202240919A (zh) 2022-10-16
TWI886377B true TWI886377B (zh) 2025-06-11

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TW111106180A TWI886377B (zh) 2021-02-22 2022-02-21 薄膜電晶體、顯示裝置、電子設備及薄膜電晶體的製造方法

Country Status (5)

Country Link
US (1) US20230387137A1 (https=)
JP (1) JP7603340B2 (https=)
KR (1) KR102938986B1 (https=)
TW (1) TWI886377B (https=)
WO (1) WO2022176986A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115939218A (zh) * 2023-01-04 2023-04-07 西湖大学 薄膜晶体管及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012222176A (ja) * 2011-04-11 2012-11-12 Dainippon Printing Co Ltd 薄膜トランジスタ及びその製造方法
TW201246551A (en) * 2010-09-14 2012-11-16 Semiconductor Energy Lab Thin film transistor
JP2016171282A (ja) * 2015-03-16 2016-09-23 日本放送協会 薄膜トランジスタおよびその製造方法
JP2016225602A (ja) * 2015-03-17 2016-12-28 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
TW201801187A (zh) * 2016-03-14 2018-01-01 國立大學法人北陸先端科學技術大學院大學 積層體、蝕刻罩幕、積層體的製造方法、及蝕刻罩幕的製造方法、及薄膜電晶體的製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI617029B (zh) * 2009-03-27 2018-03-01 半導體能源研究所股份有限公司 半導體裝置
US8927981B2 (en) * 2009-03-30 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9391096B2 (en) 2013-01-18 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201246551A (en) * 2010-09-14 2012-11-16 Semiconductor Energy Lab Thin film transistor
JP2012222176A (ja) * 2011-04-11 2012-11-12 Dainippon Printing Co Ltd 薄膜トランジスタ及びその製造方法
JP2016171282A (ja) * 2015-03-16 2016-09-23 日本放送協会 薄膜トランジスタおよびその製造方法
JP2016225602A (ja) * 2015-03-17 2016-12-28 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
TW201801187A (zh) * 2016-03-14 2018-01-01 國立大學法人北陸先端科學技術大學院大學 積層體、蝕刻罩幕、積層體的製造方法、及蝕刻罩幕的製造方法、及薄膜電晶體的製造方法

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Publication number Publication date
KR20230146506A (ko) 2023-10-19
WO2022176986A1 (ja) 2022-08-25
JP7603340B2 (ja) 2024-12-20
KR102938986B1 (ko) 2026-03-16
JPWO2022176986A1 (https=) 2022-08-25
US20230387137A1 (en) 2023-11-30
TW202240919A (zh) 2022-10-16

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