TWI877468B - 高能量線用阻劑組合物、高能量線用阻劑組合物的製造方法、阻劑圖案形成方法及半導體裝置的製造方法 - Google Patents

高能量線用阻劑組合物、高能量線用阻劑組合物的製造方法、阻劑圖案形成方法及半導體裝置的製造方法 Download PDF

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Publication number
TWI877468B
TWI877468B TW111110786A TW111110786A TWI877468B TW I877468 B TWI877468 B TW I877468B TW 111110786 A TW111110786 A TW 111110786A TW 111110786 A TW111110786 A TW 111110786A TW I877468 B TWI877468 B TW I877468B
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TW
Taiwan
Prior art keywords
high energy
resist composition
energy line
metal
disclosed
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TW111110786A
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English (en)
Chinese (zh)
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TW202248202A (zh
Inventor
呉屋剛
前田涼平
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日商日本觸媒股份有限公司
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW111110786A 2021-03-31 2022-03-23 高能量線用阻劑組合物、高能量線用阻劑組合物的製造方法、阻劑圖案形成方法及半導體裝置的製造方法 TWI877468B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021059689 2021-03-31
JP2021-059689 2021-03-31

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TW202248202A TW202248202A (zh) 2022-12-16
TWI877468B true TWI877468B (zh) 2025-03-21

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Country Status (4)

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JP (1) JP7634650B2 (https=)
KR (1) KR102861297B1 (https=)
TW (1) TWI877468B (https=)
WO (1) WO2022209950A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7737106B2 (ja) * 2021-07-16 2025-09-10 三星電子株式会社 イオン性塩および感放射線レジスト組成物
US20260050210A1 (en) * 2022-12-08 2026-02-19 Nippon Shokubai Co., Ltd. Resist composition and method for producing same
KR20260012803A (ko) * 2023-05-24 2026-01-27 도오꾜오까고오교 가부시끼가이샤 패턴 형성 방법 및 금속 화합물 함유막용 처리액

Citations (4)

* Cited by examiner, † Cited by third party
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US20160116839A1 (en) * 2014-10-23 2016-04-28 Inpria Corporation Organometallic solution based high resolution patterning compositions and corresponding methods
TW201833096A (zh) * 2016-12-02 2018-09-16 日商三菱瓦斯化學股份有限公司 化合物、樹脂、組成物、圖型形成方法及純化方法
CN109134826A (zh) * 2017-06-19 2019-01-04 日本化药株式会社 反应性多元羧酸化合物、活性能量线硬化型树脂组合物硬化物及物品
JP2019113855A (ja) * 2013-08-22 2019-07-11 インプリア・コーポレイションＩｎｐｒｉａ Ｃｏｒｐｏｒａｔｉｏｎ 有機金属溶液に基づいた高解像度パターニング組成物

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JP4554665B2 (ja) * 2006-12-25 2010-09-29 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液
KR101945055B1 (ko) * 2011-09-26 2019-02-01 제이에스알 가부시끼가이샤 감방사선성 수지 조성물, 레지스트 패턴 형성 방법, 산 발생제 및 화합물
JP7101932B2 (ja) * 2017-03-23 2022-07-19 Jsr株式会社 Ｅｕｖリソグラフィー用ケイ素含有膜形成組成物、ｅｕｖリソグラフィー用ケイ素含有膜及びパターン形成方法
JP7147687B2 (ja) * 2019-05-27 2022-10-05 信越化学工業株式会社 分子レジスト組成物及びこれを用いるパターン形成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019113855A (ja) * 2013-08-22 2019-07-11 インプリア・コーポレイションＩｎｐｒｉａ Ｃｏｒｐｏｒａｔｉｏｎ 有機金属溶液に基づいた高解像度パターニング組成物
US20160116839A1 (en) * 2014-10-23 2016-04-28 Inpria Corporation Organometallic solution based high resolution patterning compositions and corresponding methods
TW201833096A (zh) * 2016-12-02 2018-09-16 日商三菱瓦斯化學股份有限公司 化合物、樹脂、組成物、圖型形成方法及純化方法
CN109134826A (zh) * 2017-06-19 2019-01-04 日本化药株式会社 反应性多元羧酸化合物、活性能量线硬化型树脂组合物硬化物及物品

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JP7634650B2 (ja) 2025-02-21
KR20240009394A (ko) 2024-01-22
TW202248202A (zh) 2022-12-16
KR102861297B1 (ko) 2025-09-19
WO2022209950A1 (ja) 2022-10-06
JPWO2022209950A1 (https=) 2022-10-06

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