JPWO2022209950A1 - - Google Patents
Info
- Publication number
- JPWO2022209950A1 JPWO2022209950A1 JP2023510936A JP2023510936A JPWO2022209950A1 JP WO2022209950 A1 JPWO2022209950 A1 JP WO2022209950A1 JP 2023510936 A JP2023510936 A JP 2023510936A JP 2023510936 A JP2023510936 A JP 2023510936A JP WO2022209950 A1 JPWO2022209950 A1 JP WO2022209950A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021059689 | 2021-03-31 | ||
| JP2021059689 | 2021-03-31 | ||
| PCT/JP2022/012230 WO2022209950A1 (ja) | 2021-03-31 | 2022-03-17 | 高エネルギー線用レジスト組成物、高エネルギー線用レジスト組成物の製造方法、レジストパターン形成方法、及び半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022209950A1 true JPWO2022209950A1 (https=) | 2022-10-06 |
| JP7634650B2 JP7634650B2 (ja) | 2025-02-21 |
Family
ID=83459160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023510936A Active JP7634650B2 (ja) | 2021-03-31 | 2022-03-17 | 高エネルギー線用レジスト組成物、高エネルギー線用レジスト組成物の製造方法、レジストパターン形成方法、及び半導体装置の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP7634650B2 (https=) |
| KR (1) | KR102861297B1 (https=) |
| TW (1) | TWI877468B (https=) |
| WO (1) | WO2022209950A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7737106B2 (ja) * | 2021-07-16 | 2025-09-10 | 三星電子株式会社 | イオン性塩および感放射線レジスト組成物 |
| US20260050210A1 (en) * | 2022-12-08 | 2026-02-19 | Nippon Shokubai Co., Ltd. | Resist composition and method for producing same |
| KR20260012803A (ko) * | 2023-05-24 | 2026-01-27 | 도오꾜오까고오교 가부시끼가이샤 | 패턴 형성 방법 및 금속 화합물 함유막용 처리액 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4554665B2 (ja) * | 2006-12-25 | 2010-09-29 | 富士フイルム株式会社 | パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液 |
| KR101945055B1 (ko) * | 2011-09-26 | 2019-02-01 | 제이에스알 가부시끼가이샤 | 감방사선성 수지 조성물, 레지스트 패턴 형성 방법, 산 발생제 및 화합물 |
| US9310684B2 (en) * | 2013-08-22 | 2016-04-12 | Inpria Corporation | Organometallic solution based high resolution patterning compositions |
| KR102696070B1 (ko) * | 2014-10-23 | 2024-08-16 | 인프리아 코포레이션 | 유기 금속 용액 기반의 고해상도 패터닝 조성물 및 상응하는 방법 |
| WO2018101463A1 (ja) * | 2016-12-02 | 2018-06-07 | 三菱瓦斯化学株式会社 | 化合物、樹脂、組成物、パターン形成方法及び精製方法 |
| JP7101932B2 (ja) * | 2017-03-23 | 2022-07-19 | Jsr株式会社 | Ｅｕｖリソグラフィー用ケイ素含有膜形成組成物、ｅｕｖリソグラフィー用ケイ素含有膜及びパターン形成方法 |
| JP7236817B2 (ja) * | 2017-06-19 | 2023-03-10 | 日本化薬株式会社 | 反応性ポリカルボン酸化合物、それを用いた活性エネルギー線硬化型樹脂組成物、その硬化物及びその用途 |
| JP7147687B2 (ja) * | 2019-05-27 | 2022-10-05 | 信越化学工業株式会社 | 分子レジスト組成物及びこれを用いるパターン形成方法 |
-
2022
- 2022-03-17 WO PCT/JP2022/012230 patent/WO2022209950A1/ja not_active Ceased
- 2022-03-17 JP JP2023510936A patent/JP7634650B2/ja active Active
- 2022-03-17 KR KR1020237037503A patent/KR102861297B1/ko active Active
- 2022-03-23 TW TW111110786A patent/TWI877468B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| JP7634650B2 (ja) | 2025-02-21 |
| KR20240009394A (ko) | 2024-01-22 |
| TW202248202A (zh) | 2022-12-16 |
| KR102861297B1 (ko) | 2025-09-19 |
| WO2022209950A1 (ja) | 2022-10-06 |
| TWI877468B (zh) | 2025-03-21 |
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