TWI877184B - 處理裝置及處理方法 - Google Patents

處理裝置及處理方法 Download PDF

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Publication number
TWI877184B
TWI877184B TW109122695A TW109122695A TWI877184B TW I877184 B TWI877184 B TW I877184B TW 109122695 A TW109122695 A TW 109122695A TW 109122695 A TW109122695 A TW 109122695A TW I877184 B TWI877184 B TW I877184B
Authority
TW
Taiwan
Prior art keywords
modified layer
wafer
processing
peripheral
layer
Prior art date
Application number
TW109122695A
Other languages
English (en)
Chinese (zh)
Other versions
TW202107553A (zh
Inventor
田之上隼斗
山下陽平
Original Assignee
日商東京威力科創股份有限公司
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Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202107553A publication Critical patent/TW202107553A/zh
Application granted granted Critical
Publication of TWI877184B publication Critical patent/TWI877184B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0823—Devices involving rotation of the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least two axial directions, e.g. in a plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B23K2103/56—Inorganic materials other than metals or composite materials being semiconducting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Laser Beam Processing (AREA)
  • Electromagnetism (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW109122695A 2019-07-18 2020-07-06 處理裝置及處理方法 TWI877184B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-133070 2019-07-18
JP2019133070 2019-07-18

Publications (2)

Publication Number Publication Date
TW202107553A TW202107553A (zh) 2021-02-16
TWI877184B true TWI877184B (zh) 2025-03-21

Family

ID=74210801

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109122695A TWI877184B (zh) 2019-07-18 2020-07-06 處理裝置及處理方法

Country Status (6)

Country Link
US (1) US12300495B2 (https=)
JP (1) JP7170880B2 (https=)
KR (1) KR102939702B1 (https=)
CN (1) CN114096375B (https=)
TW (1) TWI877184B (https=)
WO (1) WO2021010287A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7636954B2 (ja) * 2021-04-22 2025-02-27 キオクシア株式会社 半導体製造装置および半導体装置の製造方法
JP7719633B2 (ja) * 2021-06-02 2025-08-06 株式会社ディスコ ウェーハの加工方法
JP7678881B2 (ja) * 2021-08-16 2025-05-16 東京エレクトロン株式会社 処理方法及び処理システム
US20240269768A1 (en) * 2023-02-10 2024-08-15 Disco Corporation Wafer manufacturing method

Citations (4)

* Cited by examiner, † Cited by third party
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JP2006108532A (ja) * 2004-10-08 2006-04-20 Disco Abrasive Syst Ltd ウエーハの研削方法
JP2016215231A (ja) * 2015-05-19 2016-12-22 パナソニックＩｐマネジメント株式会社 脆性基板のスライス装置及び方法
CN107507774A (zh) * 2016-06-14 2017-12-22 东京毅力科创株式会社 氮化硅膜的处理方法以及氮化硅膜的形成方法
TW201802902A (zh) * 2016-04-28 2018-01-16 迪思科股份有限公司 元件之製造方法及研削裝置

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JP4110219B2 (ja) * 2002-08-30 2008-07-02 株式会社東京精密 レーザーダイシング装置
JP4776994B2 (ja) * 2005-07-04 2011-09-21 浜松ホトニクス株式会社 加工対象物切断方法
CN102792420B (zh) * 2010-03-05 2016-05-04 并木精密宝石株式会社 单晶衬底、单晶衬底的制造方法、带多层膜的单晶衬底的制造方法以及元件制造方法
JP2012109341A (ja) * 2010-11-16 2012-06-07 Shibuya Kogyo Co Ltd 半導体材料の切断方法と切断装置
JP6044919B2 (ja) 2012-02-01 2016-12-14 信越ポリマー株式会社 基板加工方法
JP6482425B2 (ja) * 2015-07-21 2019-03-13 株式会社ディスコ ウエーハの薄化方法
JP6523882B2 (ja) * 2015-09-02 2019-06-05 株式会社ディスコ ウエーハの加工方法
JP6504977B2 (ja) * 2015-09-16 2019-04-24 株式会社ディスコ ウエーハの加工方法
JP2017071074A (ja) * 2015-10-05 2017-04-13 国立大学法人埼玉大学 内部加工層形成単結晶基板の製造方法、および、単結晶基板の製造方法
JP6541605B2 (ja) * 2016-03-30 2019-07-10 東京エレクトロン株式会社 基板処理装置、及び基板処理装置の撮像方法
JP6908464B2 (ja) * 2016-09-15 2021-07-28 株式会社荏原製作所 基板加工方法および基板加工装置
JP6918420B2 (ja) * 2017-09-14 2021-08-11 株式会社ディスコ ウェーハの加工方法
TWI809251B (zh) * 2019-03-08 2023-07-21 日商東京威力科創股份有限公司 基板處理裝置及基板處理方法
CN113518686B (zh) * 2019-03-28 2023-05-26 东京毅力科创株式会社 处理装置和处理方法
US12525453B2 (en) * 2019-04-19 2026-01-13 Tokyo Electron Limited Processing apparatus and processing method
TWI860382B (zh) * 2019-07-18 2024-11-01 日商東京威力科創股份有限公司 處理裝置及處理方法
TWI857095B (zh) * 2019-07-18 2024-10-01 日商東京威力科創股份有限公司 處理裝置及處理方法
TWI857094B (zh) * 2019-07-18 2024-10-01 日商東京威力科創股份有限公司 處理裝置及處理方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006108532A (ja) * 2004-10-08 2006-04-20 Disco Abrasive Syst Ltd ウエーハの研削方法
JP2016215231A (ja) * 2015-05-19 2016-12-22 パナソニックＩｐマネジメント株式会社 脆性基板のスライス装置及び方法
TW201802902A (zh) * 2016-04-28 2018-01-16 迪思科股份有限公司 元件之製造方法及研削裝置
CN107507774A (zh) * 2016-06-14 2017-12-22 东京毅力科创株式会社 氮化硅膜的处理方法以及氮化硅膜的形成方法

Also Published As

Publication number Publication date
KR102939702B1 (ko) 2026-03-16
US20220254638A1 (en) 2022-08-11
CN114096375B (zh) 2024-01-09
KR20220035441A (ko) 2022-03-22
CN114096375A (zh) 2022-02-25
JPWO2021010287A1 (https=) 2021-01-21
WO2021010287A1 (ja) 2021-01-21
JP7170880B2 (ja) 2022-11-14
US12300495B2 (en) 2025-05-13
TW202107553A (zh) 2021-02-16

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