CN114096375B - 处理装置和处理方法 - Google Patents

处理装置和处理方法 Download PDF

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Publication number
CN114096375B
CN114096375B CN202080050532.XA CN202080050532A CN114096375B CN 114096375 B CN114096375 B CN 114096375B CN 202080050532 A CN202080050532 A CN 202080050532A CN 114096375 B CN114096375 B CN 114096375B
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CN
China
Prior art keywords
wafer
layer
processing
modified layer
modification layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202080050532.XA
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English (en)
Chinese (zh)
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CN114096375A (zh
Inventor
田之上隼斗
山下阳平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of CN114096375A publication Critical patent/CN114096375A/zh
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Publication of CN114096375B publication Critical patent/CN114096375B/zh
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0823—Devices involving rotation of the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least two axial directions, e.g. in a plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B23K2103/56—Inorganic materials other than metals or composite materials being semiconducting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Laser Beam Processing (AREA)
  • Electromagnetism (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN202080050532.XA 2019-07-18 2020-07-09 处理装置和处理方法 Active CN114096375B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019-133070 2019-07-18
JP2019133070 2019-07-18
PCT/JP2020/026891 WO2021010287A1 (ja) 2019-07-18 2020-07-09 処理装置及び処理方法

Publications (2)

Publication Number Publication Date
CN114096375A CN114096375A (zh) 2022-02-25
CN114096375B true CN114096375B (zh) 2024-01-09

Family

ID=74210801

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080050532.XA Active CN114096375B (zh) 2019-07-18 2020-07-09 处理装置和处理方法

Country Status (6)

Country Link
US (1) US12300495B2 (https=)
JP (1) JP7170880B2 (https=)
KR (1) KR102939702B1 (https=)
CN (1) CN114096375B (https=)
TW (1) TWI877184B (https=)
WO (1) WO2021010287A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7636954B2 (ja) * 2021-04-22 2025-02-27 キオクシア株式会社 半導体製造装置および半導体装置の製造方法
JP7719633B2 (ja) * 2021-06-02 2025-08-06 株式会社ディスコ ウェーハの加工方法
JP7678881B2 (ja) * 2021-08-16 2025-05-16 東京エレクトロン株式会社 処理方法及び処理システム
US20240269768A1 (en) * 2023-02-10 2024-08-15 Disco Corporation Wafer manufacturing method

Citations (12)

* Cited by examiner, † Cited by third party
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JP2004111946A (ja) * 2002-08-30 2004-04-08 Tokyo Seimitsu Co Ltd レーザーダイシング装置及びダイシング方法
JP2006108532A (ja) * 2004-10-08 2006-04-20 Disco Abrasive Syst Ltd ウエーハの研削方法
JP2012109341A (ja) * 2010-11-16 2012-06-07 Shibuya Kogyo Co Ltd 半導体材料の切断方法と切断装置
CN102581494A (zh) * 2005-07-04 2012-07-18 浜松光子学株式会社 加工对象物切断方法
CN102792420A (zh) * 2010-03-05 2012-11-21 并木精密宝石株式会社 单晶衬底、单晶衬底的制造方法、带多层膜的单晶衬底的制造方法以及元件制造方法
JP2016215231A (ja) * 2015-05-19 2016-12-22 パナソニックＩｐマネジメント株式会社 脆性基板のスライス装置及び方法
CN106363824A (zh) * 2015-07-21 2017-02-01 株式会社迪思科 晶片的薄化方法
JP2017050404A (ja) * 2015-09-02 2017-03-09 株式会社ディスコ ウエーハの加工方法
JP2017059684A (ja) * 2015-09-16 2017-03-23 株式会社ディスコ ウエーハの加工方法
JP2017071074A (ja) * 2015-10-05 2017-04-13 国立大学法人埼玉大学 内部加工層形成単結晶基板の製造方法、および、単結晶基板の製造方法
JP2017183498A (ja) * 2016-03-30 2017-10-05 東京エレクトロン株式会社 基板処理装置、及び基板処理装置の撮像方法
JP2019054082A (ja) * 2017-09-14 2019-04-04 株式会社ディスコ ウェーハの加工方法

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* Cited by examiner, † Cited by third party
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JP6044919B2 (ja) 2012-02-01 2016-12-14 信越ポリマー株式会社 基板加工方法
JP6637831B2 (ja) * 2016-04-28 2020-01-29 株式会社ディスコ デバイスの製造方法及び研削装置
JP6742165B2 (ja) * 2016-06-14 2020-08-19 東京エレクトロン株式会社 窒化珪素膜の処理方法および窒化珪素膜の形成方法
JP6908464B2 (ja) * 2016-09-15 2021-07-28 株式会社荏原製作所 基板加工方法および基板加工装置
TWI809251B (zh) * 2019-03-08 2023-07-21 日商東京威力科創股份有限公司 基板處理裝置及基板處理方法
CN113518686B (zh) * 2019-03-28 2023-05-26 东京毅力科创株式会社 处理装置和处理方法
US12525453B2 (en) * 2019-04-19 2026-01-13 Tokyo Electron Limited Processing apparatus and processing method
TWI860382B (zh) * 2019-07-18 2024-11-01 日商東京威力科創股份有限公司 處理裝置及處理方法
TWI857095B (zh) * 2019-07-18 2024-10-01 日商東京威力科創股份有限公司 處理裝置及處理方法
TWI857094B (zh) * 2019-07-18 2024-10-01 日商東京威力科創股份有限公司 處理裝置及處理方法

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004111946A (ja) * 2002-08-30 2004-04-08 Tokyo Seimitsu Co Ltd レーザーダイシング装置及びダイシング方法
JP2006108532A (ja) * 2004-10-08 2006-04-20 Disco Abrasive Syst Ltd ウエーハの研削方法
CN102581494A (zh) * 2005-07-04 2012-07-18 浜松光子学株式会社 加工对象物切断方法
CN102792420A (zh) * 2010-03-05 2012-11-21 并木精密宝石株式会社 单晶衬底、单晶衬底的制造方法、带多层膜的单晶衬底的制造方法以及元件制造方法
JP2012109341A (ja) * 2010-11-16 2012-06-07 Shibuya Kogyo Co Ltd 半導体材料の切断方法と切断装置
JP2016215231A (ja) * 2015-05-19 2016-12-22 パナソニックＩｐマネジメント株式会社 脆性基板のスライス装置及び方法
CN106363824A (zh) * 2015-07-21 2017-02-01 株式会社迪思科 晶片的薄化方法
JP2017050404A (ja) * 2015-09-02 2017-03-09 株式会社ディスコ ウエーハの加工方法
JP2017059684A (ja) * 2015-09-16 2017-03-23 株式会社ディスコ ウエーハの加工方法
JP2017071074A (ja) * 2015-10-05 2017-04-13 国立大学法人埼玉大学 内部加工層形成単結晶基板の製造方法、および、単結晶基板の製造方法
JP2017183498A (ja) * 2016-03-30 2017-10-05 東京エレクトロン株式会社 基板処理装置、及び基板処理装置の撮像方法
JP2019054082A (ja) * 2017-09-14 2019-04-04 株式会社ディスコ ウェーハの加工方法

Also Published As

Publication number Publication date
KR102939702B1 (ko) 2026-03-16
US20220254638A1 (en) 2022-08-11
KR20220035441A (ko) 2022-03-22
CN114096375A (zh) 2022-02-25
JPWO2021010287A1 (https=) 2021-01-21
WO2021010287A1 (ja) 2021-01-21
JP7170880B2 (ja) 2022-11-14
US12300495B2 (en) 2025-05-13
TWI877184B (zh) 2025-03-21
TW202107553A (zh) 2021-02-16

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