TWI874370B - 電漿蝕刻裝置及電漿蝕刻方法 - Google Patents

電漿蝕刻裝置及電漿蝕刻方法 Download PDF

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Publication number
TWI874370B
TWI874370B TW109108730A TW109108730A TWI874370B TW I874370 B TWI874370 B TW I874370B TW 109108730 A TW109108730 A TW 109108730A TW 109108730 A TW109108730 A TW 109108730A TW I874370 B TWI874370 B TW I874370B
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TW
Taiwan
Prior art keywords
frequency power
supply
pulse signal
plasma etching
processing container
Prior art date
Application number
TW109108730A
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English (en)
Chinese (zh)
Other versions
TW202040690A (zh
Inventor
田中聡志
Original Assignee
日商東京威力科創股份有限公司
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Publication of TW202040690A publication Critical patent/TW202040690A/zh
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Publication of TWI874370B publication Critical patent/TWI874370B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/16—Vessels; Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/248—Components associated with high voltage supply
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
TW109108730A 2019-03-28 2020-03-17 電漿蝕刻裝置及電漿蝕刻方法 TWI874370B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-063648 2019-03-28
JP2019063648A JP7061981B2 (ja) 2019-03-28 2019-03-28 プラズマエッチング装置およびプラズマエッチング方法

Publications (2)

Publication Number Publication Date
TW202040690A TW202040690A (zh) 2020-11-01
TWI874370B true TWI874370B (zh) 2025-03-01

Family

ID=72603657

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109108730A TWI874370B (zh) 2019-03-28 2020-03-17 電漿蝕刻裝置及電漿蝕刻方法

Country Status (5)

Country Link
US (2) US11145493B2 (enExample)
JP (1) JP7061981B2 (enExample)
KR (1) KR102905689B1 (enExample)
CN (1) CN111755357B (enExample)
TW (1) TWI874370B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7433095B2 (ja) * 2020-03-18 2024-02-19 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP7576484B2 (ja) * 2021-02-16 2024-10-31 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
JP7667060B2 (ja) * 2021-10-22 2025-04-22 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
US20230343554A1 (en) * 2022-04-20 2023-10-26 Tokyo Electron Limited Methods To Provide Anisotropic Etching Of Metal Hard Masks Using A Radio Frequency Modulated Pulsed Plasma Scheme
KR20240031042A (ko) * 2022-08-30 2024-03-07 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
JP2025072766A (ja) * 2023-10-25 2025-05-12 東京エレクトロン株式会社 プラズマ制御方法、プラズマ処理装置及びプラズマ処理システム

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0845903A (ja) * 1994-07-27 1996-02-16 Hitachi Ltd プラズマエッチング方法
JP2016157735A (ja) * 2015-02-23 2016-09-01 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP2017069542A (ja) * 2015-09-29 2017-04-06 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP2017098323A (ja) * 2015-11-19 2017-06-01 東京エレクトロン株式会社 プラズマエッチング方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11224796A (ja) * 1998-02-05 1999-08-17 Matsushita Electron Corp プラズマ処理装置及びプラズマ処理方法
KR100317915B1 (ko) 1999-03-22 2001-12-22 윤종용 플라즈마 식각 장치
JP2001168086A (ja) 1999-12-09 2001-06-22 Kawasaki Steel Corp 半導体装置の製造方法および製造装置
JP5192209B2 (ja) * 2006-10-06 2013-05-08 東京エレクトロン株式会社 プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体
US8974684B2 (en) * 2011-10-28 2015-03-10 Applied Materials, Inc. Synchronous embedded radio frequency pulsing for plasma etching
JP6408903B2 (ja) * 2014-12-25 2018-10-17 東京エレクトロン株式会社 エッチング処理方法及びエッチング処理装置
US9761459B2 (en) * 2015-08-05 2017-09-12 Lam Research Corporation Systems and methods for reverse pulsing
KR102124407B1 (ko) * 2016-01-18 2020-06-18 주식회사 히타치하이테크 플라스마 처리 방법 및 플라스마 처리 장치
US10720313B2 (en) * 2017-08-23 2020-07-21 Tokyo Electron Limited Measuring device, measurement method, and plasma processing device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0845903A (ja) * 1994-07-27 1996-02-16 Hitachi Ltd プラズマエッチング方法
JP2016157735A (ja) * 2015-02-23 2016-09-01 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP2017069542A (ja) * 2015-09-29 2017-04-06 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP2017098323A (ja) * 2015-11-19 2017-06-01 東京エレクトロン株式会社 プラズマエッチング方法

Also Published As

Publication number Publication date
TW202040690A (zh) 2020-11-01
US11145493B2 (en) 2021-10-12
US20210407767A1 (en) 2021-12-30
CN111755357B (zh) 2025-08-22
US11996271B2 (en) 2024-05-28
US20200312622A1 (en) 2020-10-01
JP2020167186A (ja) 2020-10-08
KR20200116055A (ko) 2020-10-08
KR102905689B1 (ko) 2025-12-31
CN111755357A (zh) 2020-10-09
JP7061981B2 (ja) 2022-05-02

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