JP7061981B2 - プラズマエッチング装置およびプラズマエッチング方法 - Google Patents

プラズマエッチング装置およびプラズマエッチング方法 Download PDF

Info

Publication number
JP7061981B2
JP7061981B2 JP2019063648A JP2019063648A JP7061981B2 JP 7061981 B2 JP7061981 B2 JP 7061981B2 JP 2019063648 A JP2019063648 A JP 2019063648A JP 2019063648 A JP2019063648 A JP 2019063648A JP 7061981 B2 JP7061981 B2 JP 7061981B2
Authority
JP
Japan
Prior art keywords
frequency power
high frequency
supply
pulse signal
plasma etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2019063648A
Other languages
English (en)
Japanese (ja)
Other versions
JP2020167186A (ja
JP2020167186A5 (enExample
Inventor
聡志 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2019063648A priority Critical patent/JP7061981B2/ja
Priority to TW109108730A priority patent/TWI874370B/zh
Priority to CN202010200969.9A priority patent/CN111755357B/zh
Priority to KR1020200036983A priority patent/KR102905689B1/ko
Priority to US16/832,227 priority patent/US11145493B2/en
Publication of JP2020167186A publication Critical patent/JP2020167186A/ja
Priority to US17/468,839 priority patent/US11996271B2/en
Publication of JP2020167186A5 publication Critical patent/JP2020167186A5/ja
Application granted granted Critical
Publication of JP7061981B2 publication Critical patent/JP7061981B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/16—Vessels; Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/248—Components associated with high voltage supply
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2019063648A 2019-03-28 2019-03-28 プラズマエッチング装置およびプラズマエッチング方法 Active JP7061981B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2019063648A JP7061981B2 (ja) 2019-03-28 2019-03-28 プラズマエッチング装置およびプラズマエッチング方法
TW109108730A TWI874370B (zh) 2019-03-28 2020-03-17 電漿蝕刻裝置及電漿蝕刻方法
CN202010200969.9A CN111755357B (zh) 2019-03-28 2020-03-20 等离子体蚀刻装置和等离子体蚀刻方法
KR1020200036983A KR102905689B1 (ko) 2019-03-28 2020-03-26 플라즈마 에칭 장치 및 플라즈마 에칭 방법
US16/832,227 US11145493B2 (en) 2019-03-28 2020-03-27 Plasma etching apparatus and plasma etching method
US17/468,839 US11996271B2 (en) 2019-03-28 2021-09-08 Plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019063648A JP7061981B2 (ja) 2019-03-28 2019-03-28 プラズマエッチング装置およびプラズマエッチング方法

Publications (3)

Publication Number Publication Date
JP2020167186A JP2020167186A (ja) 2020-10-08
JP2020167186A5 JP2020167186A5 (enExample) 2021-12-23
JP7061981B2 true JP7061981B2 (ja) 2022-05-02

Family

ID=72603657

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019063648A Active JP7061981B2 (ja) 2019-03-28 2019-03-28 プラズマエッチング装置およびプラズマエッチング方法

Country Status (5)

Country Link
US (2) US11145493B2 (enExample)
JP (1) JP7061981B2 (enExample)
KR (1) KR102905689B1 (enExample)
CN (1) CN111755357B (enExample)
TW (1) TWI874370B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7433095B2 (ja) * 2020-03-18 2024-02-19 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP7576484B2 (ja) * 2021-02-16 2024-10-31 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
JP7667060B2 (ja) * 2021-10-22 2025-04-22 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
US20230343554A1 (en) * 2022-04-20 2023-10-26 Tokyo Electron Limited Methods To Provide Anisotropic Etching Of Metal Hard Masks Using A Radio Frequency Modulated Pulsed Plasma Scheme
KR20240031042A (ko) * 2022-08-30 2024-03-07 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
JP2025072766A (ja) * 2023-10-25 2025-05-12 東京エレクトロン株式会社 プラズマ制御方法、プラズマ処理装置及びプラズマ処理システム

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001168086A (ja) 1999-12-09 2001-06-22 Kawasaki Steel Corp 半導体装置の製造方法および製造装置
JP2016157735A (ja) 2015-02-23 2016-09-01 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP2017069542A (ja) 2015-09-29 2017-04-06 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP2017098323A (ja) 2015-11-19 2017-06-01 東京エレクトロン株式会社 プラズマエッチング方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0845903A (ja) * 1994-07-27 1996-02-16 Hitachi Ltd プラズマエッチング方法
JPH11224796A (ja) * 1998-02-05 1999-08-17 Matsushita Electron Corp プラズマ処理装置及びプラズマ処理方法
KR100317915B1 (ko) 1999-03-22 2001-12-22 윤종용 플라즈마 식각 장치
JP5192209B2 (ja) * 2006-10-06 2013-05-08 東京エレクトロン株式会社 プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体
US8974684B2 (en) * 2011-10-28 2015-03-10 Applied Materials, Inc. Synchronous embedded radio frequency pulsing for plasma etching
JP6408903B2 (ja) * 2014-12-25 2018-10-17 東京エレクトロン株式会社 エッチング処理方法及びエッチング処理装置
US9761459B2 (en) * 2015-08-05 2017-09-12 Lam Research Corporation Systems and methods for reverse pulsing
KR102124407B1 (ko) * 2016-01-18 2020-06-18 주식회사 히타치하이테크 플라스마 처리 방법 및 플라스마 처리 장치
US10720313B2 (en) * 2017-08-23 2020-07-21 Tokyo Electron Limited Measuring device, measurement method, and plasma processing device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001168086A (ja) 1999-12-09 2001-06-22 Kawasaki Steel Corp 半導体装置の製造方法および製造装置
JP2016157735A (ja) 2015-02-23 2016-09-01 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP2017069542A (ja) 2015-09-29 2017-04-06 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP2017098323A (ja) 2015-11-19 2017-06-01 東京エレクトロン株式会社 プラズマエッチング方法

Also Published As

Publication number Publication date
TW202040690A (zh) 2020-11-01
US11145493B2 (en) 2021-10-12
US20210407767A1 (en) 2021-12-30
TWI874370B (zh) 2025-03-01
CN111755357B (zh) 2025-08-22
US11996271B2 (en) 2024-05-28
US20200312622A1 (en) 2020-10-01
JP2020167186A (ja) 2020-10-08
KR20200116055A (ko) 2020-10-08
KR102905689B1 (ko) 2025-12-31
CN111755357A (zh) 2020-10-09

Similar Documents

Publication Publication Date Title
TWI874370B (zh) 電漿蝕刻裝置及電漿蝕刻方法
KR101033374B1 (ko) 펄스화된 ｖｈｆ 동작에 의한 플라즈마 종 및 균일성 제어
KR102441115B1 (ko) 플라즈마 처리 방법 및 플라즈마 처리 장치
KR20210020808A (ko) 기판 처리 방법, 압력 제어 장치 및 기판 처리 시스템
TW202147925A (zh) 電漿處理裝置及電漿處理方法
KR20210097027A (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
US12255049B2 (en) Plasma processing apparatus and plasma processing method
KR20210065045A (ko) 플라즈마 처리 방법 및 플라즈마 처리 장치
CN114792626A (zh) 基板处理方法、部件处理方法以及基板处理装置
JP2024545648A (ja) 高度なパルス制御を用いるリモートソースパルシング
JP2020177959A (ja) クリーニング処理方法及びプラズマ処理装置
US20200168468A1 (en) Etching method and substrate processing apparatus
JP7537845B2 (ja) プラズマ処理装置
US10763106B2 (en) Method for processing workpiece
CN113284786A (zh) 基片处理方法和基片处理装置
JP6063181B2 (ja) プラズマ処理方法、及びプラズマ処理装置
JP7632967B2 (ja) プラズマ処理装置及びプラズマ処理方法
KR20230085168A (ko) 기판 처리 방법 및 기판 처리 장치
TWI759348B (zh) 被處理體之處理方法
WO2022196369A1 (ja) 基板処理方法および基板処理装置
JP2022067033A (ja) 基板処理方法および基板処理装置
US12334331B2 (en) Substrate processing method and plasma processing apparatus
JP7537844B2 (ja) プラズマ処理装置
JP2024035702A (ja) プラズマ処理装置及びプラズマ処理方法
CN113496888A (zh) 基片处理方法和基片处理装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20211110

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20211110

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20211110

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20211130

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220131

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20220322

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20220419

R150 Certificate of patent or registration of utility model

Ref document number: 7061981

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250