TWI864123B - 圖像顯示裝置之製造方法及圖像顯示裝置 - Google Patents
圖像顯示裝置之製造方法及圖像顯示裝置 Download PDFInfo
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- TWI864123B TWI864123B TW109134239A TW109134239A TWI864123B TW I864123 B TWI864123 B TW I864123B TW 109134239 A TW109134239 A TW 109134239A TW 109134239 A TW109134239 A TW 109134239A TW I864123 B TWI864123 B TW I864123B
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- light
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- insulating film
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- image display
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/30—Active-matrix LED displays
- H10H29/39—Connection of the pixel electrodes to the driving transistors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
- H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
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- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
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- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
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- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/30—Active-matrix LED displays
- H10H29/41—Insulating layers formed between the driving transistors and the LEDs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/032—Manufacture or treatment of electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/034—Manufacture or treatment of coatings
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/80—Constructional details
- H10H29/832—Electrodes
- H10H29/8322—Electrodes characterised by their materials
- H10H29/8323—Transparent materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/80—Constructional details
- H10H29/85—Packages
- H10H29/8517—Colour filters
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- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019-181637 | 2019-10-01 | ||
| JP2019181637 | 2019-10-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202121677A TW202121677A (zh) | 2021-06-01 |
| TWI864123B true TWI864123B (zh) | 2024-12-01 |
Family
ID=75336931
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW109134239A TWI864123B (zh) | 2019-10-01 | 2020-09-30 | 圖像顯示裝置之製造方法及圖像顯示裝置 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US12356781B2 (https=) |
| EP (1) | EP4040512B1 (https=) |
| JP (1) | JP7617356B2 (https=) |
| CN (1) | CN114342091B (https=) |
| TW (1) | TWI864123B (https=) |
| WO (1) | WO2021065917A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20220067555A (ko) * | 2020-11-16 | 2022-05-25 | 삼성디스플레이 주식회사 | 표시 장치 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102544054A (zh) * | 2010-12-14 | 2012-07-04 | 三星移动显示器株式会社 | 有机发光显示装置及其制造方法 |
| US20160268360A1 (en) * | 2013-07-26 | 2016-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US20160336374A1 (en) * | 2015-05-15 | 2016-11-17 | Boe Technology Group Co., Ltd. | Display substrate, its manufacturing method and display device |
| US20190131573A1 (en) * | 2017-10-30 | 2019-05-02 | Samsung Display Co., Ltd. | Organic light emitting display device and method of manufacturing organic light emitting display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2002141492A (ja) | 2000-10-31 | 2002-05-17 | Canon Inc | 発光ダイオードディスプレイパネル及びその製造方法 |
| JP4845531B2 (ja) * | 2006-02-28 | 2011-12-28 | 三菱電機株式会社 | 画像表示装置 |
| US8409366B2 (en) | 2009-06-23 | 2013-04-02 | Oki Data Corporation | Separation method of nitride semiconductor layer, semiconductor device, manufacturing method thereof, semiconductor wafer, and manufacturing method thereof |
| JP5070247B2 (ja) | 2009-06-23 | 2012-11-07 | 株式会社沖データ | 半導体装置の製造方法、及び半導体装置 |
| US8647919B2 (en) * | 2010-09-13 | 2014-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting display device and method for manufacturing the same |
| JP2015015321A (ja) | 2013-07-03 | 2015-01-22 | 高槻電器工業株式会社 | 半導体発光素子及びその製造方法 |
| CN103762247B (zh) * | 2014-01-10 | 2016-07-06 | 北京京东方光电科技有限公司 | 薄膜晶体管、阵列基板及其制作方法及有机发光显示面板 |
| JP2016031927A (ja) | 2014-07-25 | 2016-03-07 | 株式会社半導体エネルギー研究所 | 積層構造物、入出力装置、情報処理装置、積層構造物の作製方法 |
| WO2016034984A1 (en) | 2014-09-05 | 2016-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, driver ic, display device, and electronic device |
| KR102456654B1 (ko) | 2014-11-26 | 2022-10-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 전자 기기 |
| US10741590B2 (en) * | 2016-04-12 | 2020-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Peeling method and manufacturing method of flexible device |
| TW201824220A (zh) * | 2016-09-30 | 2018-07-01 | 半導體能源硏究所股份有限公司 | 顯示面板、顯示裝置、輸入輸出裝置、資料處理裝置 |
| KR102633079B1 (ko) | 2016-10-28 | 2024-02-01 | 엘지디스플레이 주식회사 | 발광 다이오드 디스플레이 장치 |
| KR102651097B1 (ko) * | 2016-10-28 | 2024-03-22 | 엘지디스플레이 주식회사 | 발광 다이오드 디스플레이 장치 |
| JP2018072751A (ja) * | 2016-11-04 | 2018-05-10 | 株式会社半導体エネルギー研究所 | 表示パネル、表示装置、入出力装置、情報処理装置 |
| KR102772357B1 (ko) | 2016-12-20 | 2025-02-21 | 엘지디스플레이 주식회사 | 발광 다이오드 칩 및 이를 포함하는 발광 다이오드 디스플레이 장치 |
| JP6904769B2 (ja) | 2017-04-20 | 2021-07-21 | 株式会社半導体エネルギー研究所 | 表示装置 |
| KR102454083B1 (ko) | 2017-08-30 | 2022-10-12 | 엘지디스플레이 주식회사 | 마이크로-led 표시장치 및 그 제조방법 |
| CN107369748A (zh) | 2017-09-04 | 2017-11-21 | 湘能华磊光电股份有限公司 | 一种基于石墨烯的led外延生长方法 |
| CN111108613B (zh) | 2017-09-13 | 2024-01-16 | 夏普株式会社 | Led单元、图像显示元件及其制造方法 |
| KR102527303B1 (ko) * | 2017-10-31 | 2023-04-27 | 엘지디스플레이 주식회사 | 발광 표시 장치 |
| US10193042B1 (en) * | 2017-12-27 | 2019-01-29 | Innolux Corporation | Display device |
| WO2019168187A1 (ja) * | 2018-03-02 | 2019-09-06 | 株式会社 東芝 | 発光ダイオードシート、表示装置、発光装置、表示装置の製造方法及び発光装置の製造方法 |
| CN108987425B (zh) * | 2018-07-19 | 2020-09-18 | 豪威半导体（上海）有限责任公司 | 微led显示器及其制造方法 |
| KR102030323B1 (ko) * | 2018-11-23 | 2019-10-10 | 엘지디스플레이 주식회사 | 표시 장치 및 표시 장치의 제조 방법 |
| CN110034150B (zh) * | 2019-03-25 | 2020-11-27 | 厦门天马微电子有限公司 | 显示面板及其制作方法、显示装置 |
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2020
- 2020-09-29 JP JP2021551313A patent/JP7617356B2/ja active Active
- 2020-09-29 WO PCT/JP2020/036933 patent/WO2021065917A1/ja not_active Ceased
- 2020-09-29 EP EP20872417.9A patent/EP4040512B1/en active Active
- 2020-09-29 CN CN202080061417.2A patent/CN114342091B/zh active Active
- 2020-09-30 TW TW109134239A patent/TWI864123B/zh active
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102544054A (zh) * | 2010-12-14 | 2012-07-04 | 三星移动显示器株式会社 | 有机发光显示装置及其制造方法 |
| US20160268360A1 (en) * | 2013-07-26 | 2016-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US20160336374A1 (en) * | 2015-05-15 | 2016-11-17 | Boe Technology Group Co., Ltd. | Display substrate, its manufacturing method and display device |
| US20190131573A1 (en) * | 2017-10-30 | 2019-05-02 | Samsung Display Co., Ltd. | Organic light emitting display device and method of manufacturing organic light emitting display device |
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| US20250311499A1 (en) | 2025-10-02 |
| TW202121677A (zh) | 2021-06-01 |
| EP4040512A1 (en) | 2022-08-10 |
| CN114342091B (zh) | 2025-05-30 |
| JP7617356B2 (ja) | 2025-01-20 |
| EP4040512A4 (en) | 2023-11-08 |
| CN114342091A (zh) | 2022-04-12 |
| EP4040512B1 (en) | 2025-10-08 |
| WO2021065917A1 (ja) | 2021-04-08 |
| US12356781B2 (en) | 2025-07-08 |
| US20220223648A1 (en) | 2022-07-14 |
| JPWO2021065917A1 (https=) | 2021-04-08 |
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