JP7617356B2 - 画像表示装置の製造方法および画像表示装置 - Google Patents

画像表示装置の製造方法および画像表示装置 Download PDF

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JP7617356B2
JP7617356B2 JP2021551313A JP2021551313A JP7617356B2 JP 7617356 B2 JP7617356 B2 JP 7617356B2 JP 2021551313 A JP2021551313 A JP 2021551313A JP 2021551313 A JP2021551313 A JP 2021551313A JP 7617356 B2 JP7617356 B2 JP 7617356B2
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light
insulating film
layer
image display
display device
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JPWO2021065917A5 (https=
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肇 秋元
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Nichia Corp
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Nichia Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/30—Active-matrix LED displays
    • H10H29/39—Connection of the pixel electrodes to the driving transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/30—Active-matrix LED displays
    • H10H29/41—Insulating layers formed between the driving transistors and the LEDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80—Constructional details
    • H10H29/832—Electrodes
    • H10H29/8322—Electrodes characterised by their materials
    • H10H29/8323—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80—Constructional details
    • H10H29/85—Packages
    • H10H29/8517—Colour filters

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JP2021551313A 2019-10-01 2020-09-29 画像表示装置の製造方法および画像表示装置 Active JP7617356B2 (ja)

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JP2019181637 2019-10-01
JP2019181637 2019-10-01
PCT/JP2020/036933 WO2021065917A1 (ja) 2019-10-01 2020-09-29 画像表示装置の製造方法および画像表示装置

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JPWO2021065917A1 JPWO2021065917A1 (https=) 2021-04-08
JPWO2021065917A5 JPWO2021065917A5 (https=) 2023-09-11
JP7617356B2 true JP7617356B2 (ja) 2025-01-20

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US (2) US12356781B2 (https=)
EP (1) EP4040512B1 (https=)
JP (1) JP7617356B2 (https=)
CN (1) CN114342091B (https=)
TW (1) TWI864123B (https=)
WO (1) WO2021065917A1 (https=)

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* Cited by examiner, † Cited by third party
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KR20220067555A (ko) * 2020-11-16 2022-05-25 삼성디스플레이 주식회사 표시 장치

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WO2019053923A1 (ja) 2017-09-13 2019-03-21 シャープ株式会社 Ｌｅｄユニット、画像表示素子およびその製造方法
WO2019168187A1 (ja) 2018-03-02 2019-09-06 株式会社 東芝 発光ダイオードシート、表示装置、発光装置、表示装置の製造方法及び発光装置の製造方法

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US8647919B2 (en) * 2010-09-13 2014-02-11 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device and method for manufacturing the same
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JP2016031927A (ja) 2014-07-25 2016-03-07 株式会社半導体エネルギー研究所 積層構造物、入出力装置、情報処理装置、積層構造物の作製方法
WO2016034984A1 (en) 2014-09-05 2016-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, driver ic, display device, and electronic device
KR102456654B1 (ko) 2014-11-26 2022-10-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
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JP2002141492A (ja) 2000-10-31 2002-05-17 Canon Inc 発光ダイオードディスプレイパネル及びその製造方法
WO2019053923A1 (ja) 2017-09-13 2019-03-21 シャープ株式会社 Ｌｅｄユニット、画像表示素子およびその製造方法
WO2019168187A1 (ja) 2018-03-02 2019-09-06 株式会社 東芝 発光ダイオードシート、表示装置、発光装置、表示装置の製造方法及び発光装置の製造方法

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US20250311499A1 (en) 2025-10-02
TW202121677A (zh) 2021-06-01
EP4040512A1 (en) 2022-08-10
CN114342091B (zh) 2025-05-30
EP4040512A4 (en) 2023-11-08
CN114342091A (zh) 2022-04-12
EP4040512B1 (en) 2025-10-08
WO2021065917A1 (ja) 2021-04-08
US12356781B2 (en) 2025-07-08
TWI864123B (zh) 2024-12-01
US20220223648A1 (en) 2022-07-14
JPWO2021065917A1 (https=) 2021-04-08

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