TWI862027B - 半導體裝置及半導體裝置之製造方法 - Google Patents

半導體裝置及半導體裝置之製造方法 Download PDF

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Publication number
TWI862027B
TWI862027B TW112127519A TW112127519A TWI862027B TW I862027 B TWI862027 B TW I862027B TW 112127519 A TW112127519 A TW 112127519A TW 112127519 A TW112127519 A TW 112127519A TW I862027 B TWI862027 B TW I862027B
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Taiwan
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hydrogen
concentration
semiconductor device
region
layer
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TW112127519A
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English (en)
Chinese (zh)
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TW202405906A (zh
Inventor
坂根仁
加藤正史
原田俊太
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日商住重愛特科思股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs

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  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
TW112127519A 2022-07-29 2023-07-24 半導體裝置及半導體裝置之製造方法 TWI862027B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022122100A JP7513668B2 (ja) 2022-07-29 2022-07-29 半導体装置および半導体装置の製造方法
JP2022-122100 2022-07-29

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TW202405906A TW202405906A (zh) 2024-02-01
TWI862027B true TWI862027B (zh) 2024-11-11

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US (1) US20250151352A1 (https=)
EP (1) EP4564437A4 (https=)
JP (3) JP7513668B2 (https=)
CN (1) CN119487989A (https=)
TW (1) TWI862027B (https=)
WO (1) WO2024024386A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI902565B (zh) * 2024-12-13 2025-10-21 創圓科技股份有限公司 高速切換的屏蔽閘極溝槽式功率半導體裝置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI886824B (zh) * 2024-03-04 2025-06-11 力晶積成電子製造股份有限公司 半導體裝置
WO2026075184A1 (ja) * 2024-10-02 2026-04-09 株式会社デンソー 炭化珪素半導体装置およびその製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6153495A (en) * 1998-03-09 2000-11-28 Intersil Corporation Advanced methods for making semiconductor devices by low temperature direct bonding
US20180350901A1 (en) * 2011-12-28 2018-12-06 Fuji Electric Co., Ltd. Semiconductor device and method for producing semiconductor device
US20190165090A1 (en) * 2017-11-29 2019-05-30 Infineon Technologies Ag Method of Manufacturing a Semiconductor Device Comprising First and Second Field Stop Zone Portions

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130277793A1 (en) * 2012-04-24 2013-10-24 Fairchild Korea Semiconductor, Ltd. Power device and fabricating method thereof
WO2016114057A1 (ja) * 2015-01-16 2016-07-21 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
US10290711B2 (en) * 2015-01-27 2019-05-14 Mitsubishi Electric Corporation Semiconductor device
JP6508099B2 (ja) * 2016-03-18 2019-05-08 三菱電機株式会社 半導体素子
JP7052322B2 (ja) * 2017-11-28 2022-04-12 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
DE102017128243B4 (de) * 2017-11-29 2021-09-23 Infineon Technologies Ag Bipolartransistor mit isoliertem gate, aufweisend erste und zweite feldstoppzonenbereiche, und herstellungsverfahren
JP7074629B2 (ja) 2018-09-14 2022-05-24 株式会社東芝 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機
DE112019001123B4 (de) * 2018-10-18 2024-03-28 Fuji Electric Co., Ltd. Halbleitervorrichtung und herstellungsverfahren davon
JP7537099B2 (ja) * 2020-02-28 2024-08-21 富士電機株式会社 半導体装置
JP7354027B2 (ja) * 2020-03-13 2023-10-02 株式会社東芝 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機
WO2023100454A1 (ja) * 2021-11-30 2023-06-08 富士電機株式会社 炭化珪素半導体装置及びその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6153495A (en) * 1998-03-09 2000-11-28 Intersil Corporation Advanced methods for making semiconductor devices by low temperature direct bonding
US20180350901A1 (en) * 2011-12-28 2018-12-06 Fuji Electric Co., Ltd. Semiconductor device and method for producing semiconductor device
US20190165090A1 (en) * 2017-11-29 2019-05-30 Infineon Technologies Ag Method of Manufacturing a Semiconductor Device Comprising First and Second Field Stop Zone Portions

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI902565B (zh) * 2024-12-13 2025-10-21 創圓科技股份有限公司 高速切換的屏蔽閘極溝槽式功率半導體裝置

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EP4564437A1 (en) 2025-06-04
JP2024018648A (ja) 2024-02-08
JP7513668B2 (ja) 2024-07-09
JP7711274B2 (ja) 2025-07-22
US20250151352A1 (en) 2025-05-08
TW202405906A (zh) 2024-02-01
EP4564437A4 (en) 2025-11-12
JP2024114877A (ja) 2024-08-23
JP2025129429A (ja) 2025-09-04
WO2024024386A1 (ja) 2024-02-01
CN119487989A (zh) 2025-02-18

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