JP7074629B2 - 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 - Google Patents
半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 Download PDFInfo
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- JP7074629B2 JP7074629B2 JP2018173110A JP2018173110A JP7074629B2 JP 7074629 B2 JP7074629 B2 JP 7074629B2 JP 2018173110 A JP2018173110 A JP 2018173110A JP 2018173110 A JP2018173110 A JP 2018173110A JP 7074629 B2 JP7074629 B2 JP 7074629B2
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
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- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
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- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
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- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
第1の実施形態の半導体装置は、炭化珪素層と、ゲート電極と、炭化珪素層とゲート電極との間のゲート絶縁層と、炭化珪素層とゲート絶縁層との間に位置し、3個の第1のシリコン原子と結合する3配位の第1の窒素原子と、3個の第2のシリコン原子と結合する3配位の第2の窒素原子と、3個の第3のシリコン原子と結合する3配位の第3の窒素原子と、を含み、第1の窒素原子、第2の窒素原子、及び、第3の窒素原子が隣り合う第1の結合構造を有する領域と、を備える。
第2の実施形態の半導体装置は、炭化珪素層と、ゲート電極と、炭化珪素層とゲート電極との間のゲート絶縁層と、炭化珪素層とゲート絶縁層との間に位置し、X線光電子分光法によって得られるスペクトルが、3個の第1のシリコン原子と結合する3配位の第1の窒素原子に起因し第1の結合エネルギーと第1の強度を有する第1のピークと、3個の第2のシリコン原子と結合する3配位の第2の窒素原子に起因し第1の結合エネルギーより高い第2の結合エネルギーと第2の強度を有する第2のピークと、を有する領域と、を備え、炭化珪素層のゲート絶縁層に対向する面は、m面とのオフ角が8度以下の面である。
第3の実施形態のインバータ回路及び駆動装置は、第3の実施形態の半導体装置を備える駆動装置である。
第4の実施形態の車両は、第1の実施形態の半導体装置を備える車両である。
第5の実施形態の車両は、第1の実施形態の半導体装置を備える車両である。
第6の実施形態の昇降機は、第1の実施形態の半導体装置を備える昇降機である。
16 pウェル領域(炭化珪素層)
28 ゲート絶縁層
30 ゲート電極
40 界面終端領域(領域)
100 MOSFET(半導体装置)
150 インバータ回路
200 MOSFET(半導体装置)
300 駆動装置
400 車両
500 車両
600 昇降機
Claims (21)
- 炭化珪素層と、
ゲート電極と、
前記炭化珪素層と前記ゲート電極との間のゲート絶縁層と、
前記炭化珪素層と前記ゲート絶縁層との間に位置し、3個の第1のシリコン原子と結合する3配位の第1の窒素原子と、3個の第2のシリコン原子と結合する3配位の第2の窒素原子と、3個の第3のシリコン原子と結合する3配位の第3の窒素原子と、を含み、前記第1の窒素原子、前記第2の窒素原子、及び、前記第3の窒素原子が隣り合う第1の結合構造を有する領域と、
を備え、
前記領域の中の前記第1の結合構造は、
前記領域の中の、3配位の窒素原子と、結合する2個の炭素原子が隣り合う第2の結合構造よりも多い、半導体装置。 - 前記第1の結合構造において、3個の前記第1のシリコン原子のいずれか1個と3個の前記第2のシリコン原子のいずれか1個が同一の炭素原子と結合し、3個の前記第2のシリコン原子のいずれか1個と3個の前記第3のシリコン原子のいずれか1個が同一の炭素原子と結合し、3個の前記第3のシリコン原子のいずれか1個と3個の前記第1のシリコン原子のいずれか1個が同一の炭素原子と結合する請求項1記載の半導体装置。
- 前記炭化珪素層、前記領域、及び、前記ゲート絶縁層の窒素濃度分布は、前記領域にピークを有する請求項1又は請求項2記載の半導体装置。
- 前記ピークの窒素濃度は、1.2×1019cm-3以上2.4×1022cm-3以下である請求項3記載の半導体装置。
- 前記炭化珪素層の前記ゲート絶縁層に対向する面は、m面とのオフ角が8度以下の面である請求項1ないし請求項4いずれか一項記載の半導体装置。
- 前記領域の中の前記第2の結合構造の濃度は、前記領域の前記第1の結合構造の濃度の10%未満である請求項1ないし請求項5いずれか一項記載の半導体装置。
- 前記領域の中のNSi2O量は、1.2×1016cm-3未満である請求項1ないし請求項6いずれか一項記載の半導体装置。
- 炭化珪素層と、
ゲート電極と、
前記炭化珪素層と前記ゲート電極との間のゲート絶縁層と、
前記炭化珪素層と前記ゲート絶縁層との間に位置し、X線光電子分光法によって得られるスペクトルが、3個の第1のシリコン原子と結合する3配位の第1の窒素原子に起因し第1の結合エネルギーと第1の強度を有する第1のピークと、3個の第2のシリコン原子と結合する3配位の第2の窒素原子に起因し前記第1の結合エネルギーより高い第2の結合エネルギーと第2の強度を有する第2のピークと、を有する領域と、を備え、
前記炭化珪素層の前記ゲート絶縁層に対向する面は、m面とのオフ角が8度以下の面であり、
前記第2の強度は、前記第1の強度の0.5倍以上2倍以下である半導体装置。 - 3個の前記第1のシリコン原子の少なくとも一つは酸素原子に結合し、3個の前記第2のシリコン原子は、前記第2の窒素原子及び3個の炭素原子に結合する請求項8記載の半導体装置。
- 前記第1の窒素原子の第二近接原子の少なくとも一つは酸素原子であり、前記第2の窒素原子の第二近接原子はすべて炭素原子である請求項8又は請求項9記載の半導体装置。
- 前記炭化珪素層、前記領域、及び、前記ゲート絶縁層の窒素濃度分布は、前記領域にピークを有する請求項8ないし請求項10いずれか一項記載の半導体装置。
- 前記ピークの窒素濃度は、1.2×1019cm-3以上2.4×1022cm-3以下である請求項11記載の半導体装置。
- 前記ゲート絶縁層は酸化シリコンである請求項8ないし請求項12いずれか一項記載の半導体装置。
- 請求項1乃至請求項13いずれか一項記載の半導体装置を備えるインバータ回路。
- 請求項1乃至請求項13いずれか一項記載の半導体装置を備える駆動装置。
- 請求項1乃至請求項13いずれか一項記載の半導体装置を備える車両。
- 請求項1乃至請求項13いずれか一項記載の半導体装置を備える昇降機。
- 炭化珪素層の上にゲート絶縁層を形成し、
1000℃以上の窒素雰囲気中で、原子状水素(H)を前記ゲート絶縁層に照射する第1の熱処理を行い、
前記ゲート絶縁層の上にゲート電極を形成する半導体装置の製造方法。 - 前記第1の熱処理の後に、900℃以下の酸化性雰囲気で第2の熱処理を行う請求項18記載の半導体装置の製造方法。
- 前記第1の熱処理の後に、前記第1の熱処理よりも低い温度の非酸化性雰囲気で第3の熱処理を行う請求項18又は請求項19記載の半導体装置の製造方法。
- 前記第1の熱処理において、前記原子状水素(H)を加熱触媒体法によって生成する請求項18ないし請求項20いずれか一項記載の半導体装置の製造方法。
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