TWI858227B - 將micro-led組裝至基材上的方法及系統 - Google Patents

將micro-led組裝至基材上的方法及系統 Download PDF

Info

Publication number
TWI858227B
TWI858227B TW110103438A TW110103438A TWI858227B TW I858227 B TWI858227 B TW I858227B TW 110103438 A TW110103438 A TW 110103438A TW 110103438 A TW110103438 A TW 110103438A TW I858227 B TWI858227 B TW I858227B
Authority
TW
Taiwan
Prior art keywords
substrate
transfer
microled
chips
microled chips
Prior art date
Application number
TW110103438A
Other languages
English (en)
Chinese (zh)
Other versions
TW202135279A (zh
Inventor
王蘊達
呂正平
謙 王
索拉布 雷喬杜里
Original Assignee
美商帕洛阿爾托研究中心公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商帕洛阿爾托研究中心公司 filed Critical 美商帕洛阿爾托研究中心公司
Publication of TW202135279A publication Critical patent/TW202135279A/zh
Application granted granted Critical
Publication of TWI858227B publication Critical patent/TWI858227B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0438—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
    • C09J183/04—Polysiloxanes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2632—Circuits therefor for testing diodes
    • G01R31/2635—Testing light-emitting diodes, laser diodes or photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0446—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7434—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/232—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising connection or disconnection of parts of a device in response to a measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7428—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW110103438A 2020-03-02 2021-01-29 將micro-led組裝至基材上的方法及系統 TWI858227B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/805,911 US11348905B2 (en) 2020-03-02 2020-03-02 Method and system for assembly of micro-LEDs onto a substrate
US16/805,911 2020-03-02

Publications (2)

Publication Number Publication Date
TW202135279A TW202135279A (zh) 2021-09-16
TWI858227B true TWI858227B (zh) 2024-10-11

Family

ID=74668620

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110103438A TWI858227B (zh) 2020-03-02 2021-01-29 將micro-led組裝至基材上的方法及系統

Country Status (6)

Country Link
US (1) US11348905B2 (https=)
EP (1) EP3876270B1 (https=)
JP (1) JP7514777B2 (https=)
KR (1) KR102804109B1 (https=)
CN (1) CN113345878B (https=)
TW (1) TWI858227B (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11842989B2 (en) * 2020-03-10 2023-12-12 Meta Platforms Technologies, Llc Integrating control circuits with light emissive circuits with dissimilar wafer sizes
TWI872235B (zh) * 2020-03-30 2025-02-11 加拿大商弗瑞爾公司 微裝置轉移中之偏移對齊及修復
US11677060B2 (en) * 2020-04-13 2023-06-13 Electronics and Teleocmmunications Research Institute Method for transferring and bonding of devices
TW202310323A (zh) * 2021-04-27 2023-03-01 日商昭和電工材料股份有限公司 Led轉移構件及led裝置的製造方法
US12263576B2 (en) 2021-08-19 2025-04-01 Hyundai Mobis Co., Ltd. Robot system for automated assembly of modular component
CN115771214A (zh) * 2021-09-09 2023-03-10 日月光半导体制造股份有限公司 用于形成多个分离组件的模具及装置
KR20240070671A (ko) * 2021-09-30 2024-05-21 보드 오브 리전츠, 더 유니버시티 오브 텍사스 시스템 픽앤플레이스 조립 툴 및 프로세스
TWI807544B (zh) * 2021-12-17 2023-07-01 友達光電股份有限公司 顯示面板及其製造方法
KR102700929B1 (ko) * 2021-12-21 2024-08-30 한국광기술원 Led 측정장치
CN114709163A (zh) * 2022-03-30 2022-07-05 北京石油化工学院 液气双态Mini/Micro LED芯片巨量转移用晶膜及制作方法
CN115101439B (zh) * 2022-05-27 2025-05-02 黄招凤 物料传送系统及方法
KR102787169B1 (ko) * 2022-09-06 2025-03-26 삼성전자주식회사 마이크로 반도체 칩의 대량 전사 방법 및 대량 전사 장치
CN117976569A (zh) * 2022-10-25 2024-05-03 群创光电股份有限公司 电子装置及其制作方法
WO2024193797A1 (en) * 2023-03-17 2024-09-26 Ams-Osram International Gmbh Method for evaluating optoelectronic components and test arrangement
KR20260041820A (ko) * 2023-07-18 2026-03-27 뷰리얼 인크. 디스플레이 백플레인 상에 집적된 led를 갖는 칩렛
TWI872659B (zh) * 2023-08-23 2025-02-11 雷傑科技股份有限公司 晶粒填補方法
CN121773762A (zh) * 2023-09-11 2026-03-31 东京毅力科创株式会社 接合装置、接合系统、接合方法、换载装置以及换载方法
TWI879346B (zh) * 2023-12-26 2025-04-01 前源科技股份有限公司 電子元件的接合方法與巨量轉移電子元件的方法
TWI890245B (zh) * 2023-12-27 2025-07-11 錼創顯示科技股份有限公司 元件加工設備

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180166429A1 (en) * 2016-12-13 2018-06-14 Hong Kong Beida Jade Bird Display Limited Mass Transfer Of Micro Structures Using Adhesives
CN110546751A (zh) * 2018-06-11 2019-12-06 厦门三安光电有限公司 发光组件

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3994681B2 (ja) * 2001-04-11 2007-10-24 ソニー株式会社 素子の配列方法及び画像表示装置の製造方法
JP4701537B2 (ja) * 2001-05-16 2011-06-15 ソニー株式会社 素子の転写方法及び画像表示装置の製造方法
JP2003162231A (ja) 2001-11-26 2003-06-06 Sony Corp 素子の製造方法、素子の配列方法及び画像表示装置の製造方法
US7959261B2 (en) 2007-05-08 2011-06-14 Lexmark International, Inc. Micro-fluid ejection devices having reduced input/output addressable heaters
WO2009143462A2 (en) * 2008-05-22 2009-11-26 Vi Systems Gmbh Method for attaching optical components onto silicon-based integrated circuits
US8198369B2 (en) 2008-08-05 2012-06-12 GM Global Technology Operations LLC Shape memory polymers with surface having dangling adhesive polymeric chains and methods of making and using the same
CN101656233B (zh) 2008-08-22 2012-10-24 群康科技(深圳)有限公司 薄膜晶体管基板的制造方法
JP2010129700A (ja) 2008-11-26 2010-06-10 Nitto Denko Corp ダイシング・ダイボンドフィルム及び半導体装置の製造方法
WO2011123285A1 (en) 2010-03-29 2011-10-06 Semprius, Inc. Selective transfer of active components
KR100998087B1 (ko) 2010-04-01 2010-12-03 한국기계연구원 능동 탈부착 척
WO2013010113A1 (en) 2011-07-14 2013-01-17 The Board Of Trustees Of The University Of Illinois Non-contact transfer printing
US9412727B2 (en) 2011-09-20 2016-08-09 Semprius, Inc. Printing transferable components using microstructured elastomeric surfaces with pressure modulated reversible adhesion
DE102012112965A1 (de) 2012-12-21 2014-06-26 Leibniz-Institut Für Neue Materialien Gemeinnützige Gesellschaft Mit Beschränkter Haftung Gegenstand mit schaltbarer Adhäsion
US10046353B2 (en) 2014-06-06 2018-08-14 The Board Of Trustees Of The University Of Illinois Microscale stamp with reversible adhesion for transfer printing
US9698134B2 (en) * 2014-11-27 2017-07-04 Sct Technology, Ltd. Method for manufacturing a light emitted diode display
US20160175238A1 (en) 2014-12-19 2016-06-23 L'oreal Hair cosmetic composition containing a polyurethane latex polymer and a silicone-organic polymer compound
CN113410146A (zh) 2015-01-23 2021-09-17 维耶尔公司 到受体衬底的选择性微型器件转移
CN107852794B (zh) * 2015-07-23 2020-03-10 首尔半导体株式会社 显示装置及其制造方法
GB2541970B (en) * 2015-09-02 2020-08-19 Facebook Tech Llc Display manufacture
WO2017037475A1 (en) * 2015-09-02 2017-03-09 Oculus Vr, Llc Assembly of semiconductor devices
US10252083B2 (en) 2015-09-23 2019-04-09 Varian Medical Systems Inc. Systems, methods, and devices for high-energy irradiation
US20170215280A1 (en) 2016-01-21 2017-07-27 Vuereal Inc. Selective transfer of micro devices
US10698986B2 (en) * 2016-05-12 2020-06-30 Markany Inc. Method and apparatus for embedding and extracting text watermark
EP3469424A4 (en) * 2016-06-10 2020-01-15 Applied Materials, Inc. MASKLESS PARALLEL ASSEMBLY TRANSMISSION OF MICRO COMPONENTS
US10533080B2 (en) 2016-07-26 2020-01-14 The Board Of Trustees Of The University Of Illinois Transfer printing using shape memory polymers
CN107833526B (zh) * 2016-09-15 2021-05-28 伊乐视有限公司 拾取-移除系统以及发光显示器的修复方法
DE102016221281A1 (de) 2016-10-28 2018-05-03 Osram Opto Semiconductors Gmbh Verfahren zum transferieren von halbleiterchips und transferwerkzeug
JP2020513681A (ja) * 2016-11-11 2020-05-14 キューエムエイティ・インコーポレーテッド 層転写によるマイクロ発光ダイオード（ｌｅｄ）製造
US10978530B2 (en) * 2016-11-25 2021-04-13 Vuereal Inc. Integration of microdevices into system substrate
US10403537B2 (en) 2017-03-10 2019-09-03 Facebook Technologies, Llc Inorganic light emitting diode (ILED) assembly via direct bonding
TWI681472B (zh) 2017-04-10 2020-01-01 英屬開曼群島商錼創科技股份有限公司 傳輸微小元件的方法
TWI661533B (zh) * 2017-06-07 2019-06-01 Asti Global Inc., Taiwan 晶片安裝系統以及晶片安裝方法
JP6720333B2 (ja) 2017-06-12 2020-07-08 ユニカルタ・インコーポレイテッド 基板上に個別部品を並列に組み立てる方法
US20190043843A1 (en) * 2017-08-01 2019-02-07 Innolux Corporation Methods for manufacturing a display device
US20190058081A1 (en) * 2017-08-18 2019-02-21 Khaled Ahmed Micro light-emitting diode (led) display and assembly apparatus
TWI653694B (zh) * 2017-09-13 2019-03-11 英屬開曼群島商錼創科技股份有限公司 微型發光元件陣列製造方法、轉移載板以及微型發光元件陣列
US10615063B2 (en) 2017-11-08 2020-04-07 Facebook Technologies, Llc Vacuum pick-up head for semiconductor chips
TWI689105B (zh) 2017-12-19 2020-03-21 優顯科技股份有限公司 光電半導體戳記及其製造方法、與光電半導體裝置
US11538785B2 (en) * 2017-12-19 2022-12-27 Ultra Display Technology Corp. Method of using optoelectronic semiconductor stamp to manufacture optoelectronic semiconductor device
KR102428029B1 (ko) * 2017-12-20 2022-08-02 (주)포인트엔지니어링 마이크로 led 전사헤드
CN111615749B (zh) 2018-01-24 2024-11-19 苹果公司 发光结构
JP6916525B2 (ja) 2018-02-06 2021-08-11 株式会社ブイ・テクノロジー Ｌｅｄディスプレイの製造方法
KR20190114334A (ko) * 2018-03-29 2019-10-10 (주)포인트엔지니어링 마이크로 led 검사 및 리페어 방법
US10985046B2 (en) 2018-06-22 2021-04-20 Veeco Instruments Inc. Micro-LED transfer methods using light-based debonding
CN109473532B (zh) * 2018-11-20 2020-11-06 合肥京东方光电科技有限公司 一种Micro LED显示基板的制作方法
JP2019140400A (ja) 2019-04-08 2019-08-22 ゴルテック．インク マイクロ発光ダイオードの事前排除方法、製造方法、装置及び電子機器
US11521887B2 (en) * 2019-12-18 2022-12-06 Seoul Viosys Co., Ltd. Method of transferring micro LED and micro LED transferring apparatus
JP2021110875A (ja) 2020-01-14 2021-08-02 三星電子株式会社Samsung Electronics Co., Ltd. ディスプレイ装置の製造方法、ディスプレイ装置、およびディスプレイ装置製造用中間体

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180166429A1 (en) * 2016-12-13 2018-06-14 Hong Kong Beida Jade Bird Display Limited Mass Transfer Of Micro Structures Using Adhesives
CN110546751A (zh) * 2018-06-11 2019-12-06 厦门三安光电有限公司 发光组件

Also Published As

Publication number Publication date
JP2021140144A (ja) 2021-09-16
US20210272935A1 (en) 2021-09-02
EP3876270A1 (en) 2021-09-08
CN113345878A (zh) 2021-09-03
EP3876270B1 (en) 2025-01-08
CN113345878B (zh) 2024-04-05
JP7514777B2 (ja) 2024-07-11
TW202135279A (zh) 2021-09-16
KR102804109B1 (ko) 2025-05-09
KR20210111155A (ko) 2021-09-10
US11348905B2 (en) 2022-05-31

Similar Documents

Publication Publication Date Title
TWI858227B (zh) 將micro-led組裝至基材上的方法及系統
JP7441726B2 (ja) 選択可能な表面接着力転写素子を利用した転写基板
CN110148655B (zh) 微型led芯片巨量转移方法
US10222698B2 (en) Chiplets with wicking posts
JP2021140144A5 (https=)
KR102647518B1 (ko) 강도의 변화에 기초하여 물체를 선택가능하게 보유 및 해제하는 전사 요소
US11393730B2 (en) Pressure-activated electrical interconnection with additive repair
JP6926018B2 (ja) 転写基板ならびにこれを用いた実装方法および画像表示装置の製造方法
CN112735972B (zh) 一种微元件的转移基板及其制造方法
CN113270354B (zh) 一种静电场控制的芯片阵列扩张和巨量转移方法及其系统
CN118658938A (zh) 用以转移电子元件的方法及制造发光二极管显示器的方法
CN112750742A (zh) 取料装置及其取料方法